Abstract: Methods of optimizing optical alignment in an optical package are provided. In one embodiment, the optical package includes a laser diode, a wavelength conversion device, coupling optics positioned along an optical path extending from the laser diode to the wavelength conversion device, and one or more adaptive actuators. The method involves adjusting the optical alignment of the wavelength conversion device in a non-adaptive degree of freedom by referring to a thermally-dependent output intensity profile of the laser diode and a thermally-dependent coupling efficiency profile of the optical package.

Abstract: A vision system is provided to determine a positional relationship between a semiconductor wafer on a platen and an element on a processing machine, such as a printing screen, on a remote side of the semiconductor wafer from the platen. A source directs ultraviolet light through an aperture in the platen to illuminate the semiconductor wafer and cast a shadow onto the element adjacent an edge of the semiconductor wafer. A video camera produces an image using light received from the platen aperture, wherein some of that received light was reflected by the wafer. The edge of the semiconductor wafer in the image is well defined by a dark/light transition.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: Method and systems for aligning a first component with a second component are disclosed. For example, a first component may be aligned with a second component during an assembly process, with a first camera used to facilitate the viewing of one or more alignment features of the first component and/or the second component with infrared energy that is transmitted through the first component. A second camera may be used to view at least a portion of the first component and/or at least a portion of the second component using visible light.

Abstract: A system and method use a substrate with a pattern of individual, indiscrete alignment marks, i.e., the marks are separate and distinct from each other, and each mark is not divided into component parts. The pattern of marks is distributed over an area of the substrate, and the method also comprises the steps of providing a beam of radiation using an illumination system and an array of individually controllable elements to impart the beam with a pattern in its cross-section, providing a projection system to project the patterned beam onto the substrate, and providing a movement system to effect relative movement between the substrate and the projection system.

Abstract: An exposure method includes measuring coordinates of alignment marks before and after exposing a first wafer to determine a fluctuation amount of a parameter of the alignment; measuring coordinates of alignment marks before exposing a second wafer to determine a parameter of the alignment; and aligning and exposing the second wafer based on a parameter obtained by correcting the parameter with the fluctuation amount determined for the first wafer. A high overlay accuracy can be obtained even when the alignment information is gradually changed, for example, due to the linear expansion and contraction of the substrate during the exposure of the substrate.

Abstract: An exemplary alignment apparatus can align a first layer with a second layer. The first layer has a first alignment pattern. The second layer has a second alignment pattern. The alignment apparatus includes a supporting device for supporting the first layer and the second layer, a light pervious reference plate, and a viewing and adjusting mechanism. The light pervious reference plate has a first reference pattern spatially corresponding to the first alignment pattern on the first layer, and a second reference pattern spatially corresponding to the second alignment pattern on the second layer. The viewing and adjusting mechanism is adapted for assisting a human operator to align the first reference pattern with the first alignment pattern and the second reference pattern with the second alignment pattern.

Abstract: An alignment mark arrangement includes: a first alignment pattern comprising a plurality of parallel first stripes on a substrate, wherein each of the first stripes includes a first dimension; and a second alignment pattern positioned directly above and overlapping with the first alignment pattern, the second alignment pattern including a plurality of parallel second stripes, wherein each of the second stripes of the second alignment pattern has a second dimension that is larger than the first dimension of each of the first stripes of the first alignment pattern.

Abstract: A light amount detector includes a light emitter, a light receiver, and a light amount detection unit. The light emitter emits light on a detection pattern formed on a detection surface of an image carrier. The light receiver detects diffused light reflected from the detection pattern. The light amount detection unit detects an amount of light received by the light receiver based on detection output of the light receiver. One of the light emitter and the light receiver is provided at a position directly opposite to the detection surface, such that a distribution of sensitivity of the light receiver detecting the diffused light is substantially symmetrical with respect to a detection output peak when the detection surface is substantially parallel to a hypothetical line connecting the light emitter with the light receiver.

Abstract: A method of aligning a wafer includes recognizing images of the wafer accommodated on a work table and a notch of the wafer using a camera, designating at least one notch point of the notch in a recognized image, producing at least one reference line using the designated notch point in the recognized image, designating a center point of the reference line in the recognized image, producing an imaginary line having an angle with respect to the reference line from the center point of the reference line in the recognized image, producing a center line of the wafer using the imaginary line in the recognized image, and aligning the wafer using an alignment apparatus to allow the center line of the wafer and an alignment line of the work table to be matched.

Abstract: According to one embodiment, a method includes preliminarily measuring the amount of overlay or alignment shift of the mark for overlay or alignment measurement while sequentially shifting a position of a measurement area relative to the mark for overlay or alignment measurement so as to position the mark for overlay or alignment measurement on each of a plurality of partial areas. The measurement area corresponds to a field angle of the optical measurement system, and an inside of the measurement area is two-dimensionally divided into the partial areas. The method includes calculating a tool-induced shift regarding a characteristic deviation of the optical measurement system for each of the plurality of partial areas based on a preliminarily measured result of the amount of overlay or alignment shift. The method includes determining a partial area to be used from among the plurality of partial areas on the basis of the tool-induced shift calculated for each of the plurality of partial areas.

Abstract: A substrate distortion measurement apparatus comprising one or more optical detectors arranged to measure the locations of pits or holes provided in a substrate, a memory arranged to store previously determined locations of the pits or holes in the substrate, and a comparator arranged to compare the measured locations of the pits or holes with the previously determined locations of the pits or holes, to determine distortion of the substrate.

Abstract: An apparatus for aligning semiconductor wafers includes equipment for positioning a first surface of a first semiconductor wafer directly opposite to a first surface of a second semiconductor wafer and equipment for aligning a first structure on the first semiconductor wafer with a second structure on the first surface of the second semiconductor wafer. The aligning equipment comprises at least one movable alignment device configured to be moved during alignment and to be inserted between the first surface of the first semiconductor wafer and the first surface of the second semiconductor wafer. The positioning equipment are vibrationally and mechanically isolated from the alignment device motion.

Abstract: Methods of positioning an optical unit in an optical package are provided. According to one method, a partially assembled optical package is provided. The wavelength conversion device within the package comprises a conversion layer having a waveguide portion formed therein. The optical unit is coarse-positioned in the optical package to direct light from the laser diode to the wavelength conversion device in the form of a beam spot on an input face of the wavelength conversion device. The intensity of the frequency-converted optical signal output from the wavelength conversion device is monitored as the position of the optical unit is modified to 1D scan the beam spot along a portion of a crossing axis Y1 that crosses a planar projection of the conversion layer of the wavelength conversion device. Subsequently, the crossing axis Y1 is offset and the intensity monitoring step is repeated as the beam spot is 1D scanned along an offset crossing axis Y2.

Abstract: An alignment system for a lithographic apparatus has a source of alignment radiation; a detection system that has a first detector channel and a second detector channel; and a position determining unit in communication with the detection system. The position determining unit is constructed to process information from said first and second detector channels in a combination to determine a position of an alignment mark on a work piece, the combination taking into account a manufacturing process of the work piece. A lithographic apparatus has the above mentioned alignment system. Methods of alignment and manufacturing devices with a lithographic apparatus use the above alignment system and lithographic apparatus, respectively.

Abstract: An alignment measurement system measures an alignment target on an object. A measurement illuminates the target and is reflected. The reflected measurement beam is split and its parts are differently polarized. A detector receives the reflected measurement beam. A processing unit determines alignment on the basis of the measurement beam received by the detector. An alternative arrangement utilizes an optical dispersive fiber to guide a multi-wavelength measurement beam reflected from the object to a detector.

Abstract: In a method of aligning a substrate, a first alignment mark in a single shot region on the substrate may be identified. A second alignment mark in the single shot region may be selectively identified in accordance with the identification of the first alignment mark. The substrate may then be aligned using identified any one of the first alignment mark and the second alignment mark. Thus, although the substrate may be accurately aligned, the accurately aligned substrate may not be determined to be misaligned.

Abstract: Disclosed is a system for aligning a 3D image display device. The system for aligning the 3D image display device comprises: a display panel showing a left eye image and a right eye image, and having a display panel align mark at a circumference of the display panel; a plurality of 3D filter including a transparent substrate, and a retarder converting a left eye image into a first polarized light and a right eye image into a second polarized light on the transparent substrate; a plurality of 3D filter align mark having a retarder pattern formed at a circumference of the 3D filter on the transparent substrate of the 3D filter, and a reflection plate formed on the retarder pattern; and a vision system taking pictures of the display panel align marks and the 3D filter align marks.

Abstract: In order to allow for aligning a relative position between a transferred object and a stamper with high accuracy without providing an alignment pattern in the transferred object, there are provided: a pattern transfer method, including: when adjusting the relative position between the stamper and the transferred object, a step of detecting at least two or more edge positions of the transferred object and calculating an arbitrary point from the detected edge positions; a step of detecting a position of the stamper from an edge of the stamper or an alignment mark formed in the stamper; and a step of adjusting the relative position between the transferred object and the stamper from the arbitrary point and the position of the stamper; and an imprint device using the same.

Abstract: A controller measures positional information of a stage within an XY plane using three encoders which at least include one each of an X encoder and a Y encoder of an encoder system, and the stage is driven in the XY plane, based on measurement results of the positional information and positional information (p1, q1), (p2, q2), and (p3, q3) in a surface parallel to the XY plane of a head (an encoder) used for measurement of the positional information. Accordingly, it becomes possible to control the movement of the stage with good precision, while switching the head (the encoder) used for control during the movement of the stage using the encoder system which includes a plurality of heads.

Abstract: An alignment mark determines alignment of a first and a second exposure on a substrate on a macro level and a micro level. The alignment mark includes a first alignment pattern projected during the first exposure and a second alignment pattern projected during the second exposure. The alignment mark includes a first sub-mark at least partially defined by the first alignment pattern and a second sub-mark at least partially defined by the second alignment pattern. Relative positions of the first and second sub-marks on the substrate are representative for alignment of the first and second exposures on the macro level. At least one sub-mark is defined by image lines of the first alignment pattern and the second alignment pattern, and wherein relative positions of image lines of the first alignment pattern and image lines of the second alignment pattern of the at least one sub-mark are representative for alignment of the first and second exposures on the micro level.

Abstract: A method for determining an offset between a center of a substrate and a center of a depression in a chuck includes providing a test substrate to the depression, the test substrate having a dimension smaller than a dimension of the depression, measuring a position of an alignment mark of the test substrate while in the depression, and determining the offset between the center of the substrate and the center of the depression from the position of the alignment mark.

Abstract: A process for optically aligning a laser rangefinder that includes the steps of providing a laser rangefinder having a laser source, a photodetector lens and a photodetector, providing a fiber optic travel path, aligning the laser source to the fiber optic travel path, illuminating the photodetector with a light source, focusing the photodetector lens, coupling the fiber optic travel path to an optical light source, and aligning the fiber optic light relative to the photodetector.

Abstract: In one embodiment, a center of rotation and a slippage amount are estimated when slippage occurs due to radial runout during planar rotation ? to align the mask and the substrate. The slippage amount is estimated after rotation is reflected in a movement command value of a stage as a compensation value, and a moving table, on which the substrate is placed, is moved to compensate the slippage amount, thereby improving overlay performance.

Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

Abstract: An analysis of an object dyed with fluorescent coloring agents carried out with the aid of a fluorescent microscope which is modified for improved resolving power and called a nanoscope. The method is carried out with a microscope having an optical system for visualizing and projecting a sample image to a video camera which records and digitizes images of individual fluorescence molecules and nanoparticles at a low noise, a computer for recording and processing images, a sample holder arranged in front of an object lens, a fluorescent radiation exciting source and a set of replaceable suppression filters for separating the sample fluorescent light.

Abstract: According to an example, a first layer of a substrate comprises a plurality of gratings having a periodicity P. A second layer of the substrate comprises a plurality of gratings, overlapping with the first set of gratings, and having a periodicity of NP, where N is an integer greater than 2. A first set of gratings has a bias of +d and the second set of gratings has a bias of ?d. A beam of radiation is projected onto the gratings and the angle resolved spectrum of the reflected radiation detected. The overlay error is then calculated using the angle resolved spectrum of the reflected radiation.

Abstract: A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields.

Abstract: In a method of aligning a substrate, a first alignment mark and a second alignment mark in a first shot region on the substrate may be sequentially identified. The substrate may be primarily aligned using identified any one of the first alignment mark and the second alignment mark. A used alignment mark and an unused alignment mark during the primary alignment process of the first alignment mark and the second alignment mark in a second shot region on the substrate may be sequentially identified. The substrate may be secondarily aligned using identified any one of the used alignment mark and the unused alignment mark during the primary alignment process. Thus, a time for identifying the alignment mark may be reduced.

Abstract: During a period after starting exposure to a plurality of shot areas subject to exposure on a wafer until completing the exposure, a light via a slit pair arranged on a stage that holds the wafer, of illumination light via a pattern generating device, is received, and information on a positional relation between an illumination light and the stage (and hence a positional relation between the illumination light and the wafer) is detected. With this operation, even if the information on the positional relation between the illumination light and the wafer varies due to some reason, information on the variation can be detected while performing the exposure to the plurality of shot areas. Accordingly, high-precision exposure can be achieved in an exposure operation, by considering this detection results.

Abstract: A method of aligning a wafer includes irradiating light onto a plurality of alignment marks of a wafer, detecting signals outputted from the alignment marks to obtain alignment position offsets, selecting a set of the alignment marks corresponding to the alignment position offsets having a same or similar distribution, and aligning the wafer based the selected alignment marks.

Abstract: The position of a product is measured using an alignment mark on the product. Radiation is transmitted towards the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark comprises a set of mutually parallel conductor tracks from which the diffracted radiation is collected, the pattern being defined by a pattern of variation of the pitch between successive tracks as a function of position along the surface of the product. Thus, for example the pattern comprises alternating first and second areas wherein the pitch has a first and second value, respectively. Because the tracks in the different parts of the pattern, such as the first and second areas, are parallel to each other improved measurements are possible.

Abstract: A method of forming a monitor mark includes forming an insulating film on a semiconductor substrate, and forming a first repetitive line pattern group and a second repetitive line pattern group by patterning the insulating film on the semiconductor substrate, such that the first repetitive line pattern group and the second repetitive line pattern group face each other with a predetermined space therebetween.

Abstract: A substrate includes an overlay target. The overlay target can include two superposed layers. Each of the two superposed layers includes two gratings with a different pitch from each other.

Abstract: A measurement mark on a substrate has a first section with first primary and first secondary lines. The first primary lines have a first width and are arranged at a first pitch and in alternating order with the first secondary lines. A second section comprises second primary and second secondary lines arranged in alternating order. The second primary lines have a second width that is different from the first width. The pitch of the primary lines and the distance between the primary and the secondary lines is the same in each case. The spectral response of both sections of the measurement mark is determined by an analyzer unit of a measurement apparatus, and a sign of a difference between target and actual widths of the lines is determined by comparing a first spectrum derived from the first section with a second spectrum derived from the second section.

Abstract: A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.

Abstract: A system and method for facilitating passive alignment of an optical component in an optical bench. A groove is etched into the optical bench. The groove has two sections. The first section is configured to act as an optical guide. The second section is configured to receive the optical component. An optical component is inserted into the first section and moved into the second section. The optical component may be bonded to the optical bench.

Abstract: A position finding system and method may be used to find an alignment position of a laser device relative to an optical fiber such as an angled optical fiber. The laser device may be positioned “off-axis” relative to the optical fiber such that light from the laser device is directed at an angle to an end of the optical fiber and coupled into the optical fiber. The position finding system and method may be used to find the alignment position by searching for relative high power positions at different angular orientations of the laser device and calculating coordinates of at least one alignment position from the coordinates of the relative high power positions. The relative high power positions may be positions at which the measured power coupled into the optical fiber by the laser is maximized.

Abstract: A method is described for measuring a dimension on a substrate, wherein a target pattern is provided with a nominal characteristic dimension that repeats at a primary pitch of period P, and has a pre-determined variation orthogonal to the primary direction. The target pattern formed on the substrate is then illuminated so that at least one non-zero diffracted order is detected. The response of the non-zero diffracted order to variation in the printed characteristic dimension relative to nominal is used to determine the dimension of interest, such as critical dimension or overlay, on the substrate. An apparatus for performing the method of the present invention includes an illumination source, a detector for detecting a non-zero diffracted order, and means for positioning the source relative to the target so that one or more non-zero diffracted orders from the target are detected at the detector.

Abstract: A method detects a position of a mark based on an image signal of the mark. The method includes steps of obtaining a first position of the mark by performing a first process for the image signal, extracting plural feature values from the image signal based on the first position, and detecting the position of the mark by obtaining an offset value for the first position based on the plural feature values.

Abstract: An apparatus for placement of a component onto a target platform includes a multiple-sensor probe adapted to sense a relative position of one or more reference marks or one or more alignment marks with respect to the multiple-sensor probe. The component includes one or more alignment marks, the target platform includes one or more reference marks, and the multiple-sensor probe includes a multitude of sensors. A first multitude of latches is adapted to record a size of the reference mark, and a relative position of the reference mark with respect to the probe to facilitate alignment of the probe to the reference mark. A second multitude of latches is adapted to record an instantaneous positional relationship between the alignment mark and the aligned probe to facilitate alignment of the component to the aligned probe. The first and second multitude of latches is coupled to the multitude of sensors.

Abstract: An empirical diffraction based overlay (eDBO) measurement of an overlay error is produced using diffraction signals from a plurality of diffraction based alignment pads from an alignment target. The linearity of the overlay error is tested using the same diffraction signals or a different set of diffraction signals from diffraction based alignment pads. Wavelengths that do not have a linear response to overlay error may be excluded from the measurement error.

Abstract: An alignment apparatus for a planar member includes, an image capturing unit which captures an image of a rotationally asymmetrical alignment mark provided on the planar member, a position detection unit which detects a position of the alignment mark from the image, a position adjusting unit which adjusts, based on the detected position of the alignment mark, the position of the planar member relative to a reference position, and an orientation detection unit which detects an orientation of the planar member based on the rotational asymmetry of the alignment mark captured in the image.

Abstract: A lithographic apparatus has a plurality of different alignment arrangements that are used to perform an alignment measurement on the same mark(s) by: detecting a first alignment mark located on an object and producing a first alignment signal by a first detector; detecting the first mark and producing a second alignment signal by a second detector using a different alignment measurement than the first detector; receiving the first alignment signal from the first detector; calculating a first position of the at least first mark based on the first alignment signal; receiving the second alignment signal from the second detector; calculating a further first position of the at least first mark based on the second alignment signal.

Abstract: A method and system for controlling an overlay shift on an integrated circuit is disclosed. The method and system comprises utilizing a scanning electron microscope (SEM) to measure the overlay shift between a first mask and a second mask of the circuit after a second mask and comparing the overlay shift to information about the integrated circuit in a database. The method and system includes providing a control mechanism to analyze the overlay shift and feed forward to the fabrication process before a third mask for error correction. A system and method in accordance with the present invention advantageously utilizes a scanning electron microscope (SEM) image overlay measurement after the fabrication process such as etching and chemical mechanical polishing (CMP).

Abstract: Pulley alignment apparatus for aligning pulleys when the operating position of a variable sheave pulley of a pulley system has changed is provided. The pulley alignment apparatus has an adjustable laser light unit that can be adjusted to compensate for the resulting displacement of the centerline of the variable sheave pulley when the operating position is changed. The pulley alignment apparatus also has a set of gauges for determining the operating position of a variable sheave pulley and determining if a belt is adequate for the variable sheave pulley at the operating position.

Abstract: Disclosed are methods and apparatus for determining overlay error. Radiation that is scattered from each of a plurality of cells of a target is measured. Each cell includes at least a first grating structure formed by a first process and a second grating structure formed by a second process and wherein each cell has a predefined offset between such each cell's first and second grating structures. The first and second grating structures of the different cells have different predefined offsets, and each predefined offset of each cell is selected to cause one or more terms to be cancelled from a periodic function that represents radiation scattered and measured from each cell. The scattered radiation of each cell is represented with a periodic function having a plurality of unknowns parameters, including an unknown overlay error, and the unknown overlay error is determined based on the plurality of periodic functions for the plurality of cells.

Abstract: A laser beam emitted by an encoder main body enters a wafer table via a PBS from the outside, and reaches a grating at a point that is located right under exposure area, and is diffracted by the grating. Then, by receiving interference light of a first polarized component that has returned from the grating and a second polarized component reflected by the PBS, positional information of the wafer table is measured. Accordingly, because the first polarized component, which has passed through PBS passes through the wafer table until it is synthesized with the second polarized component again, does not proceed through the atmosphere outside, position measurement of the wafer table can be performed with high precision without the measurement beam being affected by the fluctuation of the atmosphere around the wafer table.

Abstract: Semiconductor wafer alignment markers and associated systems and methods are disclosed. A wafer in accordance with a particular embodiment includes a wafer substrate having an alignment marker that includes a first structure and a second structure, each having a pitch, with first features and second features positioned within the pitch. The first features are positioned to generate first phase portions of an interference pattern, with at least one of the first features having a width different than another of the first features in the pitch, and with the second features positioned to generate second phase portions of the interference pattern, with the second phase portions having a second phase opposite the first phase, and with at least one of the second features having a width different than that of another of the second features in the pitch. The pitch for the first structure is different than the pitch for the second structure.

Abstract: A method for determining the centrality of masks is disclosed. The mask is positioned in a coordinate measuring device on a measurement table displaceable in a direction perpendicular to the optical axis of an imaging measurement system in an interferometrically measurable way. The position of a mask coordinate system with respect to the measuring device coordinate system is determined based on at lest two structures on the mask. The relative distance from one of the at least first and second outer edges to the at least two structures is determined. The coordinate measuring machine determines the actual coordinates of the at least two structures with respect to the respective outer edges, which must not exceed a predetermined deviation from a desired value.