Abstract: A method is provided for measurement of the thickness of any deposit of material on the inner wall of a pipeline at least partly filled with a medium including hydrocarbons, the medium being for instance oil or natural gas, wherein the method includes: projecting infrared light onto the inner wall of the pipeline along a line corresponding to the intersection between the inner wall of the pipeline and a cross-sectional plane of the pipeline; registering an image of the infrared light projected on the inner wall of the pipeline; and determining the thickness of any deposit of material on the inner wall of the pipeline based on the registered image.

Abstract: A thickness measuring device for measuring an object includes a thickness measuring component and a sensing determining means. The thickness measuring component includes a plurality of measuring members provided respectively in correspondence with a plurality of the objects. Each measuring member respectively measures one object by moving itself along an extending direction and/or by irradiating a light to the object. The sensing determining means retrieves an image of the measuring member and/or an image of the light reflected from the object to further obtain and display a thickness value of the object. The thickness measuring device of the present invention is more effective and inexpensive.

Abstract: Thickness measurement apparatuses 1 and 2 are set a preset distance Ld from each other. The first apparatus 1 performs calibration using a thickness reference plate 5c. While the second apparatus 2, placed on a downstream side in a conveying direction, is performing measurement process, mode setter 3 sets “measurement” for the first apparatus 1. Mode setter 3 further gives an instruction to start a “thickness correction” process to the second apparatus 2. Mode setter 3 delays a first thickness measurement value 1 until a position corresponding to the distance is reached in a traveling distance, determines the difference between the first value 1 and a second thickness measurement value 2 from the second apparatus 2 as a correction value, and executes thickness correction without halting the measurement performed by the second apparatus 2.

Abstract: A local purging tool for purging a portion of a surface of a wafer with purging gas is disclosed. The purging tool includes a purging chamber configured to contain purging gas within a cavity of the purging chamber, a permeable portion of a surface of the purging chamber configured to diffuse purging gas from the cavity of the chamber to a portion of a surface of a wafer, and an aperture configured to transmit illumination received from an illumination source to a measurement location of the portion of the surface of the wafer and further configured to transmit illumination reflected from the measurement location to a detector.

Abstract: Provided are an apparatus for measuring a thickness change, a system using the apparatus, a morphology microscope using the apparatus, a method of measuring a thickness change, and a method of acquiring a morphology image by using the measuring method, by which a minute thickness change may be precisely and accurately measured or a morphology image may be acquired by using an inexpensive and simple configuration. The apparatus includes a light source for irradiating beam onto a target object; a curved reflector for reflecting the beam reflected on the target object and incident onto the curved reflector; and a sensing unit for sensing the beam reflected on the curved reflector.

Abstract: The objective of the present invention is to provide an unexpected detecting apparatus enabled to evaluate an evenness of a compound coated on an electrode of a battery. The detecting apparatus (1) detects an evenness of a compound (12) coated on an electrode (10) of a battery, and includes a first sensor (20) for measuring a mass per unit area of the compound (12) in any points thereof, a second sensor (30, 50) for measuring a thickness of the compound (12) in the any points, and a holder (40, 60) for holding the first and second sensors (20, 30, 50), in which the first and second sensors (20, 30, 50) measure the mass and thickness at the same time, and the evenness is evaluated on the basis of the measured mass and thickness.

Abstract: Various embodiments are directed to systems and methods for measuring a thickness of a container. For example, a control device may receive data indicating a surface topology of the container and based on the surface topology of the container, instruct a multi-axis positioning system to position a sensor relative to a first point of the container such that: a distance from the sensor to a surface at the first point is about equal to a predetermined distance; and the sensor direction is about normal to the surface at the first point. Data indicating the thickness at the first point may be received from the sensor.

Abstract: In accordance with an embodiment, a film thickness monitoring method includes applying light to a substrate, which is a processing target, in a semiconductor manufacturing process involving rotation of the substrate, detecting reflected light from the substrate, and calculating a thickness of a film on the substrate. The thickness of the film is calculated from intensity of the reflected light detected in an identified time zone in which incident light passes a desired region on the substrate during the semiconductor manufacturing process.

Abstract: The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.

Abstract: In accordance with an embodiment, a film thickness monitoring method includes polishing an opaque film on a transparent film on a substrate, irradiating the substrate with light concurrently with the polishing of the substrate, obtaining a first signal by detecting reflected light from the substrate, acquiring first data from the first signal, and calculating a polishing amount of the opaque film using the first data. The polishing is performed by relative rotation of the substrate and a polishing table to which a polishing pad is attached. The first data is obtained by grouping the first signals obtained from positions each remote from a central position of the substrate by a same distance, and by performing data processing.

Abstract: A recording media deciding apparatus has: a light radiating portion which radiates light having a uniform light amount on a range corresponding to an image capturing range of a first surface of a bundle of recording media; a light detecting portion which captures an image of light emitted from a second surface different from the first surface of the bundle of the recording media; and a controller which decides on a type of the recording media based on an output of the light detecting portion.

Abstract: An inspection device and an inspection method for boiler furnace water wall tubes. The inspection device includes a scanner including columns placed upright and fixed by magnets onto the surfaces of multiple water wall tubes extending in the up-down direction on the inner wall surfaces of the boiler furnace, a support frame fixed to the columns to support a displacement sensor producing laser light to be irradiated onto the surface of a water wall tube, and a moving mechanism for moving the displacement sensor in the axial direction of the water wall tube relative to the support frame. A signal processing unit calculates the amount of reduced wall thickness of the water wall tube from a difference between the cross-sectional surface shape of the water wall tube based on a signal from the displacement sensor and a reference shape without reduction in wall thickness.

Abstract: A recording medium determination apparatus includes a light radiation unit which radiates light toward a recording medium; a light receiving unit which receives diffuse reflection light, which is light radiated from the light radiation unit and diffuse reflected by the recording medium; a reflection portion which can reflect transmitted light, which is radiated from the light radiation unit and transmitted through the recording medium, to cause the transmitted light to be incident to the recording medium again; a switching unit which switches a reflectance state such that a reflectance of the reflection portion changes; and a determination unit which determines a thickness of the recording medium on a basis of a value of a ratio between light amounts of a plurality of the diffuse reflection lights which are reflected by the reflection portion in different reflectance states and are received by the light receiving unit.

Abstract: A method accurately monitors the progress of polishing and accurately detects the polishing end point. The method includes directing light to the substrate during polishing of the substrate, receiving reflected light from the substrate, measuring an intensity of the reflected light at each wavelength, and producing a spectrum indicating a relationship between intensity and wavelength from measured values of the intensity. The method also includes calculating an amount of change in the spectrum per predetermined time, integrating the amount of change in the spectrum with respect to polishing time to obtain an amount of cumulative change in the spectrum, and monitoring the progress of polishing of the substrate based on the amount of cumulative change in the spectrum.

Abstract: The invention relates to an apparatus for determining a layer thickness on a tape moved along a feed direction, comprising: a movement unit for moving the tape along the feed direction, a light generating unit for generating illumination radiation, a beam shaping unit disposed downstream of the light generating unit for shaping at least one strip-shaped illumination beam for linear illumination of the tape transversely with respect to the feed direction, a detector unit for detecting illumination radiation reflected and/or transmitted at the tape, and an evaluation device for determining the layer thickness on the basis of the detected illumination radiation. The apparatus can also be used for determining a degree of contamination of a surface of the tape, the surface being contaminated by particles, by detecting illumination radiation scattered at the tape.

Abstract: A method and system for real-time, in-line measurements of thicknesses of semiconductor layers of photovoltaic devices is provided. The method and system include taking ex-situ optical data measurements after deposition of the semiconductor layers. The measurements are then used to calculate the thicknesses of the layers in real-time using optical modeling software.

Abstract: In vapour deposition applications, especially OLED mass production, where it is necessary to measure and/or control the deposition rate of evaporation sources within specific tolerances, a measurement system is adapted to use robust and accurate optical thickness measurement methods at high and low rate sources, so that the thickness of a layer deposited on a substrate can be measured and controlled. A first evaporation source (11) deposits a layer of material on a substrate (20). A mobile element (41) is provided, On which a film is deposited from a second evaporation source (12b) in a deposition location (D1). Subsequently the mobile element is conveyed to a measurement location (D2) where the thickness of the film is measured by a thickness detector (45). The measurement apparatus is arranged to control the deposition of the first evaporation source in dependence on the thickness of the film deposited on the mobile element.

Abstract: The attenuation and other optical properties of a medium are exploited to measure a thickness of the medium between a sensor and a target surface. Disclosed herein are various mediums, arrangements of hardware, and processing techniques that can be used to capture these thickness measurements and obtain three-dimensional images of the target surface in a variety of imaging contexts. This includes general techniques for imaging interior/concave surfaces as well as exterior/convex surfaces, as well as specific adaptations of these techniques to imaging ear canals, human dentition, and so forth.

Abstract: A method is disclosed for inspecting a mold which has a porous alumina layer over its surface. The method includes providing, based on a relationship between a first parameter indicative of a thickness of the porous alumina layer and a color parameter indicative of a color of reflected light from the porous alumina layer, first color information which represents a tolerance of the first parameter of a porous alumina layer which has an uneven structure that is within a tolerance; providing a mold which is an inspection subject, the mold having a porous alumina layer over its surface; obtaining a color parameter which is indicative of a color of reflected light from the porous alumina layer of the inspection subject mold; and determining a suitability of the first parameter of the inspection subject mold based on the obtained color parameter and the first color information.

Abstract: Dual mounting head scanner system measures the thickness of a flexible continuous moving web such as paper by employing an optical senor positioned in the upper head to determine the distance between the optical sensor and the upper surface of the paper while a displacement sensor positioned in the lower head determines the distance between the displacement sensor, which includes an RF coil, and a reference surface on the upper head. An air clamp and vacuum source assembly on the operative surface of the lower head maintains the moving web in physical contact with a measurement surface that is incorporated in the operative surface. The optical sensor directs incident radiation onto the web at the measurement surface. Thermal isolation of the two sensors eliminates thermal interactions.

Abstract: A method of inspecting a substrate is disclosed. The method of inspecting a substrate, comprises: obtaining phase data per projecting part with regard to a substrate, by projecting pattern beam onto the substrate having a target object formed thereon through a plurality of projecting parts in sequence; obtaining height data per projecting part with regard to the substrate by using the phase data per the projecting part; compensating tilt of the height data by using the height data per projecting part; modifying the tilt-compensated height data per projecting part; and obtaining integrated height data by using the modified height data.

Abstract: An measuring apparatus includes: a storage unit configured to store a relationship, regarding an irradiation condition predetermined based on a correlation between a characteristic of each of beams of reflected light obtained from a plurality of patterns different from one another in a thickness of a residual layer in a recessed portion and the thickness of the residual layer of each of the plurality of patterns, between the characteristic of the reflected light from each pattern and the thickness of the residual layer of the pattern; and a processing unit configured to, based on a characteristic of reflected light from a pattern formed on a substrate irradiated with light under the irradiation condition and the relationship stored in the storage unit, obtain a thickness of a residual layer in a recessed portion of the pattern formed on the substrate.

Abstract: There is provided a device for monitoring a thickness reduction of an inner surface in a heat transfer tube or an inner surface in an evaporation tube, the device including: a movement unit which moves along a fin tube; a laser measurement unit which is provided in the movement unit and measures the thickness reduction of the inner surface by a laser; a cable which includes a light guiding path for introducing a laser into the laser measurement unit and a light deriving path for transmitting reflected light; and a thickness reduction determining unit which compares the laser measurement data with past data or standard data and determines the current thickness reduction.

Abstract: A device for measuring the thickness of slag on the surface of liquid metal contained in an ingot mould comprises a wire made of electrically conductive material and capable of being eliminated under the effect of the heat at the temperature of the slag, the wire having a free end able to be dipped into the slag, a wire feeder capable of displacing the wire so that its free end dips vertically into the slag according to a predetermined trajectory, a wire displacement measurer capable of measuring a distance travelled by the free end of the wire during a time interval between two predetermined events when the latter is displaced under the action of the feeding means, and a wire feeder controller having a molten metal contact detector capable of detecting contact between the free end and the surface of the liquid metal.

Abstract: A bead inspection step and a bead inspection apparatus that inspect the quality of a bead are disclosed . . . . The bead inspection apparatus includes a wire-feed-speed measurement device that measures the feed speed of a brazing wire, and an analysis portion that measures and analyzes position coordinate data about surfaces of a first, workpiece, a second workpiece and the bead, and performs a first shape data measurement step of. measuring first shape data before brazing, a second shape data measurement step of measuring second shape data after the brazing, a feature quantity calculation step of calculating predicted values of feature quantities based on the first and second shape data and the brazing wire feed speed, and a throat thickness calculation step of calculating a predicted value of the throat thickness by a regression expression formed based on actual measurements of the feature quantities and of the throat thickness.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: A detection device that detects a mark provided on the back side of an object, the detection device includes a first detection unit configured to detect the mark from a surface side of the object; a second detection unit configured to detect a surface position of the object; and a processing unit. The processing unit determines a thickness of the object based on a difference between a first focus position acquired with reference to the position of the mark detected by the first detection unit and a second focus position acquired with reference to the surface position detected by the second detection unit.

Abstract: Apparatus for monitoring a thickness of a silicon wafer with a highly-doped layer at least at a backside of the silicon wafer is provided. The apparatus has a source configured to emit coherent light of multiple, wavelengths. Moreover, the apparatus comprises a measuring head configured to be contactlessly positioned adjacent the silicon wafer and configured to illuminate at least a portion of the silicon wafer with the coherent light and to receive at least a portion of radiation reflected by the silicon wafer. Additionally, the apparatus comprises a spectrometer, a beam splitter and an evaluation device. The evaluation device is configured to determine a thickness of the silicon wafer by analyzing the radiation reflected by the silicon wafer by an optical coherence tomography process. The coherent light is emitted multiple wavelengths in a bandwidth b around a central wavelength wc.

Abstract: A system for through silicon via (TSV) structure measurement comprises a reflectometer, and a computing unit. The reflectometer emits a broadband light beam to at least a TSV structure and receives a reflection spectrum of at least a TSV structure. The computing unit is coupled with the reflectometer and determines the depth of the TSV structure in accordance with the reflection spectrum.

Abstract: A system for determining a thickness of a photovoltaic module may include a first displacement sensor and a second displacement sensor along a shared axis. The system may also include a support structure that supports the first and second displacement sensors and locates the sensors on either side of the photovoltaic module.

Abstract: The invention relates to the positioning of an additional photo receiver in addition to the known laser sensors for detecting double parts during transport and during the loading of machines, which are situated opposite each other. The additional photo receiver receives the laser beam from a laser sensor located opposite, exactly when there is no material in the measuring gap and the two laser sensors are precisely aligned. This arrangement makes it possible to improve the measuring process and the analysis of the measurement, and thereby increases process reliability during the monitoring of transport and the loading of machines.

Abstract: A measuring method for topography of moving specimen and a measuring apparatus thereof is disclosed, providing a measuring module that moves along with a testing specimen to narrow relative velocity of the testing specimen and the measuring module so that the measuring module is able to have enough luminous intensity signal at the same position in time, to measure the topography or the thickness of the testing specimen.

Abstract: A depth estimation apparatus and method are provided. The depth estimation method includes grouping a plurality of frame signals generated by a depth pixel into a plurality of frame signal groups which are used to estimate a depth to an object without a depth estimation error caused by an omission of a frame signal, the grouping of the a plurality of frame signals based on whether an omitted frame signal exists in the plurality of frame signals and based on a continuous pattern of the plurality of frame signals; and estimating the depth to the object using each of the plurality of frame signal groups.

Abstract: A method and system are presented for use in characterizing properties of an article having a structure comprising a multiplicity of sites comprising different periodic patterns, where method includes providing a theoretical model of prediction indicative of optical properties of different stacks defined by geometrical and material parameters of corresponding sites, said sites being common in at least one of geometrical parameter and material parameter; performing optical measurements on at least two different stacks of the article and generating optical measured data indicative of the geometrical parameters and material composition parameters for each of the measured stacks; processing the optical measured data, said processing comprising simultaneously fitting said optical measured data for the multiple measured stacks with said theoretical model and extracting said at least one common parameter, thereby enabling to characterize the properties of the multi-layer structure within the single article.

Abstract: A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum.

Abstract: An optical film thickness meter capable of measuring an optical film thickness and spectroscopic characteristics highly accurately, and a thin film forming apparatus with the optical film thickness meter are provided. The optical film thickness meter includes a light projector, a light receiver, a monochromator, and a reflection mirror having a reflection surface substantially perpendicularly to the optical axis of measurement light on the side opposite to an actual substrate. The actual substrate is disposed having a predetermined angle to the optical axis. The measurement light passes through the actual substrate twice, whereby a change in transmissivity can be increased, and control accuracy of thickness measurement is improved. Measurement errors caused by a difference in transmission positions is prevented.

Abstract: A thickness measuring system for measuring a thickness of a planar plate-shaped member on a conveyer belt includes a processor, a first distance measurer and a second distance measurer. The first distance measurer on one side of the conveyor belt can emit and receive a first light beam parallel to the conveyer belt for reflection off the planar plate-shaped member, and calculate a first distance between the first distance measurer and the plate-shaped member. The second distance measurer on the other side of the conveyor belt can emit and receive a second light beam and a third light beam for reflection off the planar plate-shaped member, and calculate a second distance between the first distance measurer and the plate-shaped member and a third distance between the second distance measurer and the plate-shaped member.

Abstract: An apparatus and method for detecting an increase in thickness of a strip of material from a desired thickness. The apparatus may comprise a light source, a light detector, an indicator, a first fiber optic cable coupled with the light source, a second fiber optic cable coupled with the light detector, and a housing. The housing may comprise a material slot for passing the strip of material therethrough and fixing optical fibers of the first fiber optic cables to reflect light off of a first and second face of the strip of material into optical fibers of the second fiber optic cable. The amount of light detected by the light detector depends on the proximity of each of the faces of the strip of material to ends of the optical fibers. The thicker the strip of material, the less light received by the light detector, which may actuate the indicator.

Abstract: An optical characteristic measuring apparatus includes a light source, a detector and a data processing unit. Data processing unit includes a modeling unit, an analyzing unit and a fitting unit. The plurality of film model equations are solved, and prescribed calculation is performed on the assumption that the optical constants included in the plurality of film model equations is identical. Fitting is performed between a waveform obtained by substituting the obtained film thickness and the obtained optical constants of the film into the film model equations and a waveform of the wavelength distribution characteristic obtained by detector, thereby determining that the optical constants included in the plurality of film model equations is identical and that the film thickness and the optical constants obtained by the analyzing unit are correct values.

Abstract: A method accurately monitors the progress of polishing and accurately detects the polishing end point. The method includes directing light to the substrate during polishing of the substrate, receiving reflected light from the substrate, measuring an intensity of the reflected light at each wavelength, and producing a spectrum indicating a relationship between intensity and wavelength from measured values of the intensity. The method also includes calculating an amount of change in the spectrum per predetermined time, integrating the amount of change in the spectrum with respect to polishing time to obtain an amount of cumulative change in the spectrum, and monitoring the progress of polishing of the substrate based on the amount of cumulative change in the spectrum.

Abstract: A resin molded body comprises a front surface layer disposed on a front surface side, a back surface layer disposed on a back surface side, and an intermediate layer disposed between the front surface layer and the back surface layer, each of the layers has a micro-phase separated structure including lamellar micro domains, each of the micro domains of the layers has a wave-like shape having amplitudes in the opposite direction of the front surface and the back surface, a maximum value of predetermined distances in the micro domains of the front surface layer and a maximum value of predetermined distances in the micro domains of the back surface layer are larger than the wavelength in the visible light range, and predetermined distances in the micro domains of the intermediate layer are equal to or less than the wavelength in the visible light range.

Abstract: An apparatus (100) for determining thickness of a banknote (1), comprising: a light generator (8) to emit a light beam (12); and a sensor array (10) to detect at least a portion of the emitted light beam (12); wherein the thickness of the banknote (1) is determined by detection of a change from a predetermined position of the emitted light beam (12) by the sensor array (10).

Abstract: An image measuring apparatus includes a strobe illumination unit, a camera, a movement mechanism, and a controller. The controller includes a focus position detector that detects the focus position of the camera by controlling the movement mechanism to move the camera along the optical axis of the camera at a predetermined velocity and by controlling the camera to pick up an image of a measurement target object at plural positions. The focus position detector includes an illumination control unit that controls the lighting time of the strobe illumination unit, thereby controlling the brightness of illumination, a relative position acquisition unit that acquires the position of the camera at the center of the lighting time, and a contrast detection unit that detects the contrast of the image picked up by the camera.

Abstract: A method and system are provided for controlling processing of a structure. First measured data is provided being indicative of at least one of: a thickness (d2) of at least one layer (L2) of the structure W in at least selected sites of the structure prior to processing of the structure, and a surface profile of the structure prior to processing. An optical measurement is applied to at least the selected sites of the structure after processing and second measured data is generated being indicative of at least one of: a thickness of the processed structure (d?) and a surface profile of the processed structure. The second measured data is analyzed by interpreting it using the first measured data to determine a thickness (d?1 or d?2) of at least one layer of the processed structure. This determined thickness is indicative of the quality of processing.

Abstract: An ellipsometer includes an integrated focusing system with a beam splitter between the sample and the ellipsometer detector. The beam splitter provides a portion of the radiation to a lens system that magnifies any deviation from a best focus position by at least 2×. The focusing system includes a 2D sensor, where the spot of light focused on the sensor is 50 percent or smaller than the sensor. The focusing system may further include a compensator to correct optical aberrations caused by the beam splitter. A processor receives an image signal and finds the location of the spot from which focus error can be determined and used to correct the focal position of the ellipsometer. The processor compensates for movement of the spot caused by rotating optics. Additionally, a proportional-integral-derivative controller may be used to control exposure time and/or gain of the camera.

Abstract: Methods, systems, and apparatus for spectrographic monitoring of a substrate during chemical mechanical polishing are described. In one aspect, a computer-implemented method includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, measuring a sequence of spectra in-situ during polishing to obtain measured spectra, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, fitting a linear function to the sequence of index values, and halting the polishing either when the linear function matches or exceeds a target index or when the associated index value from the determining step matches or exceeds the target index.

Abstract: An apparatus for checking thickness dimensions in a semiconductor wafer (1) during grinding operations includes an optical probe (3) which transmits infrared radiations on the surface (2) being machined of the wafer (1), and detects beams that are reflected by said surface, by an opposite surface (2?) of the wafer and/or by surfaces (2?, 2??) separating different layers in the wafer. The beam of emitted and reflected radiations travels along a path (4) with known and constant discontinuities, in part through the air (15) and in part through a cushion (30) of low flow liquid, which flows with substantially laminar flow. A support and positioning element (7) for the optical probe includes hydraulic ducts (22,25) that generate the liquid cushion. A method for checking the thickness dimensions includes the generation of the liquid cushion at the path along which the beam of emitted and reflected radiations travels.

Abstract: A method for characterizing a sample is described. The method includes applying a first pulse of electromagnetic radiation to the surface of the sample and thus creating a propagating strain pulse within the sample. A second pulse of second electromagnetic radiation is applied to the surface of the sample so as to intercept the propagating strain pulse. The first and second pulses are applied through a structure, such as a reflector, that is disposed over the surface of the sample at a distance predetermined to form an optical cavity; the cavity having a width related to a wavelength of the second electromagnetic radiation. The method includes detecting at least one optical property of a reflection of the second pulse from the sample. The detected optical property(ies) of the reflection are associated with a characteristic of the sample. An apparatus, computer-readable medium and structure are also described.

Abstract: A polishing apparatus includes a platen to hold a polishing pad having a plurality of optical apertures, a carrier head to hold a substrate against the polishing pad, a motor to generate relative motion between the carrier head and the platen, and an optical monitoring system. The optical monitoring system includes at least one light source, a common detector, and an optical assembly configured to direct light from the at least one light source to each of a plurality of separated positions in the platen, to direct light from each position of the plurality of separated positions to the substrate as the substrate passes over said each position, to receive reflected light from the substrate as the substrate passes over said each position, and to direct the reflected light from each of the plurality of separated positions to the common detector.

Abstract: A system for analyzing one or more proton exchange membranes is disclosed. The system may include a light source, a light detector, a light source driver and a central processing unit or computer. The system may determine one or more characteristics of the one or more proton exchange membranes. The system may include a roller or belt system in communication with the central processing unit, light source, light detector and light source driver, configured for use in a manufacturing assembly line.