Semiconductor Patents (Class 359/248)
  • Patent number: 11460723
    Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: October 4, 2022
    Assignee: TEXAS TECH UNIVERSITY SYSTEM
    Inventors: Hongxing Jiang, Changzhi Li, Jing Li, Jingyu Lin
  • Patent number: 11398713
    Abstract: An electro-absorption modulator of the invention is an electro-absorption modulator which is formed on an InP substrate and modulate incident light according to a voltage applied to that modulator, and which comprises a light absorbing layer for absorbing a portion of the incident light by using an electric field generated by the applied voltage; wherein the light absorbing layer is comprised of a ternary or more complex III-V semiconductor mixed crystal that does not contain Al but contains Bi.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: July 26, 2022
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shinya Okuda, Takashi Nagira
  • Patent number: 11320666
    Abstract: Optoelectronic apparatus includes a substrate and an array of light-emitting elements formed on a semiconductor die and mounted on the substrate, wherein the light-emitting elements are driven by separate, respective conductors, which are formed on the substrate. A controller drives the light-emitting elements selectively by applying drive signals to the respective conductors in order to create a pattern. One or more optical elements are mounted so as to receive light emitted from the array of light-emitting elements and include at least one diffractive optical element (DOE) configured to project the received light from the first optical element so as to create multiple replicas of the pattern, which fan out over a predefined angular range.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: May 3, 2022
    Assignee: APPLE INC.
    Inventor: Zafrir Mor
  • Patent number: 11294206
    Abstract: In one embodiment, an electro-absorption modulator is configured to receive an optical light from an optical light source and outputs a modulated optical signal. The electro-absorption modulator includes a bias voltage that is used to set optimum predetermined modulation performance and an output power of the electro-absorption modulator. A controller is configured to measure a bias current of the optical light source and use a change of the bias current to determine a detuning change that occurs between the electro-absorption modulator and the optical light source. The controller uses the detuning change to automatically control the bias voltage of the electro-absorption modulator to maintain the predetermined modulation performance and maintain the output power of the electro-absorption modulator.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: April 5, 2022
    Assignee: ARRIS Enterprises LLC
    Inventor: Jun Wang
  • Patent number: 11217625
    Abstract: A display module is disclosed. The display module includes a substrate, a plurality of micro light-emitting diodes (micro-LEDs) disposed on the substrate and configured to radiate light, a reflective layer surrounding a lateral surface of each of the plurality of micro-LEDs, and a light blocking layer disposed on the reflective layer.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: January 4, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jinhyun Cho, Heungbom Kim, Hojin Yu, Wonyong Lee, Hyounggil Choi
  • Patent number: 11206087
    Abstract: Provided is an optical module comprising a plate-like metal stem and a semiconductor optical modulation element mounted to a dielectric substrate provided on one side of the metal stem, wherein the metal stem has a metal stem penetration section in which a metal lead pin is inserted coaxially in a penetration hole which is formed in the metal stem and a dielectric member is provided to fill the penetration hole around the outer circumference of the lead pin, and a signal for modulation is supplied to the semiconductor optical modulation element connected in parallel with a terminal matching circuit, from the other side of the metal stem via the metal stem penetration section, wherein the terminal matching circuit is configured by a series connecting body which is comprised of a first resistor and a parallel body which is comprised of a second resistor and a capacitor.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: December 21, 2021
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tatsuki Otani, Akio Shirasaki, Norio Okada
  • Patent number: 11127772
    Abstract: The present disclosure relates to a sensor chip and an electronic apparatus each of which enables carriers generated through photoelectric conversion to be efficiently used. At least one or more avalanche multiplication regions multiplying carriers generated through photoelectric conversion are provided in each of a plurality of pixel regions in a semiconductor substrate, and light incident on the semiconductor substrate is condensed by an on-chip lens. Then, a plurality of on-chip lenses is arranged in one pixel region. The present technology, for example, can be applied to a back-illuminated type CMOS image sensor.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: September 21, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Akira Matsumoto
  • Patent number: 11022826
    Abstract: A spatial light modulator (SLM) comprised of a 2D array of optically-controlled semiconductor nanocavities can have a fast modulation rate, small pixel pitch, low pixel tuning energy, and millions of pixels. Incoherent pump light from a control projector tunes each PhC cavity via the free-carrier dispersion effect, thereby modulating the coherent probe field emitted from the cavity array. The use of high-Q/V semiconductor cavities enables energy-efficient all-optical control and eliminates the need for individual tuning elements, which degrade the performance and limit the size of the optical surface. Using this technique, an SLM with 106 pixels, micron-order pixel pitch, and GHz-order refresh rates could be realized with less than 1 W of pump power.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: June 1, 2021
    Assignee: Massachusetts Institute of Technology
    Inventors: Christopher Louis Panuski, Dirk Robert Englund
  • Patent number: 11009727
    Abstract: Aspects of the invention are directed to an electro-optical device having a layer structure including a substrate, an electrically insulating layer on top of the substrate, a bonding layer on top of the electrically insulating layer, a Pockels layer on top of the bonding layer, a waveguide core on top of the Pockels layer, and a cladding layer cladding both the waveguide core and the Pockels layer, the latter coated by the cladding layer. The Pockels layer is a layer of a crystalline first material having a Pockels coefficient between 10 pm/V and 10 000 pm/V. The waveguide core includes a second material, which can be crystalline. The device can be adapted to optically couple radiation into and/or from the waveguide core. Each of the first material and the second material has a larger refractive index than the electrically insulating layer and the cladding layer for said radiation.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: May 18, 2021
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Karl Felix Sebastian Eltes, Stefan Abel, Jean Fompeyrine
  • Patent number: 10993318
    Abstract: A flexible polymeric film includes a reinforcement layer and a base layer. The reinforcement layer includes a lamella and a plurality of columns. The columns are on a surface of the lamella. Each of the columns extends in a direction and is separated from a neighboring column by a gap. The base layer is coupled to the columns and portions of the surface of the lamella in the gaps between the columns. The base layer is less rigid than the reinforcement layer. The flexible polymeric film can be produced by spraying a precursor onto a substrate. A layer of the precursor is formed on the substrate and exposed to an energy beam to form a preliminary film on the substrate. The columns can be formed from a plurality of portions of the preliminary film. The lamella is formed on top of the preliminary film that is formed with the columns.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: April 27, 2021
    Assignee: Nova Engineering Films, Inc.
    Inventor: Sang In Lee
  • Patent number: 10959319
    Abstract: A cooling package in a power module comprises a first side for placing one or more semiconductor components; one or more holes for placing one or more magnetic components; and a second side with one or more connection parts. Therefore, all components of a power module which need to dissipate the heat have two thermal dissipation paths, therefore the heat inside the module can be greatly reduced.
    Type: Grant
    Filed: October 25, 2016
    Date of Patent: March 23, 2021
    Assignee: Telefonaktiebolaget LM Ericsson (publ)
    Inventors: Tai Ma, Peihua Li
  • Patent number: 10901246
    Abstract: An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: January 26, 2021
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Jae-Hoon Han, Sanghyeon Kim, Pavlo Bidenko, Subin Lee, Jin-Dong Song
  • Patent number: 10795316
    Abstract: A display for displaying a wide Field of View (FoV) scene including a holographic image within the scene, including a first Spatial Light Modulator (SLM) and an optical system for producing a first holographic image at a center of a displayed scene, and a second image display for producing at least a first additional image adjacent to the first holographic image. In some embodiments an augmented reality display is used for the displaying of the first holographic image at the center of a field of view and the second image adjacent to the first holographic image. In some embodiments a virtual reality display is used for the displaying of the first holographic image near the center of a field of view and the second image adjacent to the first holographic image. Related apparatus and methods are also described.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: October 6, 2020
    Assignee: Real View Imaging Ltd.
    Inventors: Shaul Alexander Gelman, Carmel Rotschild, Aviad Kaufman
  • Patent number: 10551611
    Abstract: The present disclosure generally relates to a method, and apparatus implementing the method for removing particulate accumulation from an optical element of a micro electromechanical systems (MEMS) package. The method may select a cleaning mode based, at least in part on, one or more of output of a sensor or a maintenance routine. Cleaning modes may include actuating, using an actuator of the MEMS package, one of a plurality of motion modes across the optical element. Optionally, the cleaning mode may include applying, using a power source of the MEMS package, a charge to the optical element. The disclosed techniques may enable the MEMS package to automatically and dynamically remove particulate matter without introducing additional mechanical elements.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: February 4, 2020
    Assignee: MICROSOFT TECHNOLOGY LICENSING, LLC
    Inventors: Joshua Owen Miller, Utku Baran, Wyatt Owen Davis
  • Patent number: 10510833
    Abstract: A method for manufacturing a semiconductor device comprises forming first groove, depositing, and ion-implanting. At the step of forming the first groove, the first groove is formed in a stacked body comprising a gallium nitride (GaN)-based first semiconductor layer containing an n-type impurity and a gallium nitride (GaN)-based second semiconductor layer stacked on the first semiconductor layer and containing a p-type impurity. The first groove has a bottom portion located in the second semiconductor layer. At the depositing step, a p-type impurity is deposited on side portion and the bottom portion of the first groove. At the ion-implanting step, a p-type impurity is ion-implanted into the first semiconductor layer through the first groove.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: December 17, 2019
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Takaki Niwa, Takahiro Fujii, Masayoshi Kosaki
  • Patent number: 10424679
    Abstract: A controllable frequency selective surface. The frequency selective surface has a plurality of conductive patches with integrated circuits straddling gaps between, and connected to, pairs of patches separated by gaps. Each integrated circuit presents a controllable impedance and as a result the characteristics of the frequency selective surface are controllable.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: September 24, 2019
    Assignee: Raytheon Company
    Inventor: Gary A. Frazier
  • Patent number: 10388753
    Abstract: Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. In examples, the regrowth takes place over exposed portions of the channel layer in the source and drain regions of the device, and the regrown material has a composition different from the barrier layer. In other examples, the regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: August 20, 2019
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: Andrew Armstrong, Albert G. Baca, Andrew A. Allerman, Carlos Anthony Sanchez, Erica Ann Douglas, Robert Kaplar
  • Patent number: 10305256
    Abstract: A laser-diode device includes a substrate; at least one first cladding layer placed on the substrate; an active layer placed on the first cladding layer and arranged to emit a radiation; at least one second cladding layer placed on the active layer, said cladding layers being adapted to form a heterojunction; a first terminal facet and a second terminal facet placed transversally relative to the cladding layers and to the active layer; a periodic structure, placed in proximity to the second terminal facet and within the second cladding layer, and belonging to an optical cavity, wherein the first terminal facet represents the output mirror from which the radiation generated by the active layer exits, and the second terminal facet, integrated by the periodic structure, represents a second mirror having high reflectivity, so that the radiation produced by the active layer exits almost totally through the first mirror.
    Type: Grant
    Filed: February 22, 2017
    Date of Patent: May 28, 2019
    Assignee: Prima Electro S.P.A.
    Inventors: Roberto Paoletti, Claudio Coriasso, Paolo Calefati
  • Patent number: 10180587
    Abstract: A light modulator may include: a light modulating unit formed as a pixel-array type by using a PIN diode including multiple quantum wells including a Group-III nitride semiconductor material, and configured to modulate light by electroabsorption; and/or a control unit including a transistor configured to control voltage applied to the PIN diode of the light modulating unit. The PIN diode and the transistor may be arrayed in an active matrix form.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: January 15, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Duhyun Lee, Byungkyu Lee
  • Patent number: 10156741
    Abstract: An electro-optic modulator device includes a modulation region, a reflecting region, a conductive line and an anti-reflecting region. The modulation region includes a doped region. The reflecting region is over the modulation region. The conductive line is connected to the doped region. The conductive line extends through the reflecting region. The anti-reflecting region is on an opposite surface of the modulation region from the reflecting region.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wan-Yu Lee, Ying-Hao Kuo
  • Patent number: 10095083
    Abstract: A method of generating THz radiation includes the steps of generating optical input radiation with an input radiation source device (10), irradiating a first conversion crystal device (30) with the optical input radiation, wherein the first conversion crystal device (30) is arranged in a single pass configuration, and generating the THz radiation having a THz frequency in the first conversion crystal device (30) in response to the optical input radiation by an optical-to-THz-conversion process, wherein a multi-line frequency spectrum is provided by the optical input radiation in the first conversion crystal device (30), and the optical-to-THz-conversion process includes cascaded difference frequency generation using the multi-line frequency spectrum. Furthermore, a THz source apparatus being configured for generating THz radiation and applications thereof are described.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: October 9, 2018
    Assignees: Deutsches Elektronen-Synchrotron DESY, Massachusetts Institute of Technology
    Inventors: Franz X. Kaertner, Damian N. Barre, Michael Hemmer, Giovanni Cirmi, Oliver D. Muecke, Giulio Maria Rossi, Arya Fallahi, Nicholas H. Matlis, Luis E. Zapata, Koustuban Ravi, Fabian Reichert
  • Patent number: 10032951
    Abstract: A photosensor for the detection of infrared radiation in the wavelength range of 1 to 1000 micrometers consists of a semiconductor substrate with a highly doped interaction volume for the incoming radiation. At the edge of this highly doped region, an extended gate electrode is placed consisting of a conducting material on top of an insulating layer. On the other side of the gate electrode, another highly doped semiconductor region is placed, acting as a charge collector. Through free carrier absorption in the interaction volume, incoming photons impart their energy on mobile charge carriers. In the case of free electrons, the gate electrode is biased slightly below the reset voltage of the interaction volume, so that the electrons carrying the additional energy of the absorbed photons can predominantly make the transition from the interaction volume across the gate electrode area to the charge collector volume.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: July 24, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventor: Peter Seitz
  • Patent number: 9983545
    Abstract: Dual or multi-modulation display system are disclosed that comprise projector systems with at least one modulator that may employ non-mechanical beam steering modulation. Many embodiments disclosed herein employ a non-mechanical beam steering and/or polarizer to provide for a highlights modulator.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: May 29, 2018
    Assignee: Dolby Laboratories Licensing Corporation
    Inventors: Douglas J. Gorny, Martin J. Richards
  • Patent number: 9972905
    Abstract: A reconfigurable electro-magnetic tile includes a laser layer including a plurality of lasers, and a pixelated surface comprising a plurality of metal patches and a plurality of switches, wherein each respective switch of the plurality of switches is in a gap between a first respective metal patch and a second respective metal patch, wherein each respective switch is optically coupled to at least one respective laser of the plurality of lasers, and wherein each switch of the plurality of switches comprises a phase change material.
    Type: Grant
    Filed: February 9, 2015
    Date of Patent: May 15, 2018
    Assignee: HRL Laboratories, LLC
    Inventors: James H. Schaffner, Hyok J. Song, Keyvan R. Sayyah, Pamela R. Patterson, Jeong-Sun Moon, Alan E. Reamon, Keerti S. Kona, Joseph S. Colburn
  • Patent number: 9773932
    Abstract: An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×1015 cm?3.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: September 26, 2017
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kei Fujii, Koji Nishizuka, Takashi Kyono, Kaoru Shibata, Katsushi Akita
  • Patent number: 9767738
    Abstract: A projection system is provided that uses an additional light valve in series with at least one color sub-assembly and respective light valve in order to increase the contrast of a projected image, wherein bit sequences are generated for the additional light valve that do not result in interference with the respective light valve bit sequences.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: September 19, 2017
    Assignee: CHRISTIE DIGITAL SYSTEMS USA, INC.
    Inventor: Lawrence Goerzen
  • Patent number: 9460665
    Abstract: A display media including a pixel layer containing subpixels for different optical bands composed of nano-scale structures and an intensity control layer that can pattern the luminance of the subpixels. The display media includes a substrate layer, a sub-wavelength substrate supported by the substrate layer and including subpixels, each subpixel defined by at least one sub-wavelength structure having at least one specific optical property including a specific optical band, at least two of the subpixels having a different specific optical property, and an intensity control layer to individually control an amount of luminance of each individual subpixel in a pattern. Some of the subpixels may have colors that define a color space, while some other subpixels may have an invisible radiation spectrum band. For example, the display media can allow both overt information (color images) and covert information to be embedded together with high density.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: October 4, 2016
    Assignee: Nanomedia Solutions Inc.
    Inventors: Hao Jiang, Reza Qarehbaghi, Bozena Kaminska, Mohamadreza Najiminaini, Jeffrey J. L. Carson, Mohamad Rezaei
  • Patent number: 9059140
    Abstract: A method of mounting a plurality of semiconductor or microelectronic chips or dies, the method including providing a carrier, temporarily adhering the plurality of semiconductor or microelectronic chips or dies to the carrier with active faces of the chips or dies facing towards the carrier, covering backsides of the chips and filling empty spaces between the chips or dies with a metallic material to thereby define an assembly of the chips or dies and the metallic material, and releasing the assembly from the carrier, wherein each chip or die comprises at least one bonding ring higher than a height of the active face of the respective chip or die or any connections on the active face of the respective chip or die.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: June 16, 2015
    Assignee: HRL Laboratories, LLC
    Inventors: Alexandros D. Margomenos, Miroslav Micovic
  • Patent number: 8989600
    Abstract: A modulating apparatus includes a branch that branches input light; a first modulating unit that modulates the phase of a first branch obtained by the branch; a second modulating unit that modulates a second branch obtained by the branch; a third modulating unit that is connected in series to the first modulating unit, transmits the first branch without branching the first branch, modulates the phase of light transmitted by controlling a refractive index of the light transmitted; a fourth modulating unit that is connected in series to the second modulating unit, transmits the second branch without branching the second branch, and modulates the phase of a light transmitted by controlling a refractive index of the light transmitted; and a coupler that couples the first branch modulated by the first and the third modulating units and the second branch modulated by the second and the fourth modulating units, at different intensities.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: March 24, 2015
    Assignee: Fujitsu Optical Components Limited
    Inventor: Kenichi Nakamoto
  • Patent number: 8978237
    Abstract: A method to align an optical device optically with an interference device is disclosed. The method includes steps of: selecting one of arm waveguides, biasing rest of arm waveguides to cause optical absorption thereat, and aligning the optical device optically with the selected arm waveguide.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: March 17, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Tohru Watanabe
  • Patent number: 8948546
    Abstract: An object of the present invention is to provide a temperature-independent optical frequency shifter for generating sub-carriers with a miniaturizable configuration, as well as to provide an all-optical OFDM modulator using the same that is compact, has low temperature dependence, and is even compatible with different frequency grids. Provided is an optical frequency shifter and an optical modulator using the same, the optical frequency shifter comprises one input optical port, a 1-input, 2-output optical coupler optically connected thereto, two Mach-Zehnder modulation units individually optically connected to the two outputs thereof, a 2-input, 2-output optical coupler optically connected to the individual outputs thereof, and two output optical ports optically connected to the outputs thereof, wherein the two Mach-Zehnder modulation units are driven by periodic waveforms at the same frequency whose phases differ from each other by (2p+1)?/2 (p: integer).
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: February 3, 2015
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Takashi Saida, Hiroshi Yamazaki, Takashi Goh, Ken Tsuzuki, Shinji Mino
  • Patent number: 8929745
    Abstract: A first clock modulator branches a light beam, varies a phase difference of the resulting light beams according to a first clock, and causes interference of the light beams. A second clock modulator branches a light beam from the first clock modulator and synchronized with the first clock, varies a phase difference of the resulting light beams according to a second clock, and causes interference of the light beams. A third clock modulator branches a light beam from the first clock modulator and inversely synchronized with the first clock, varies a phase difference of the resulting light beams according to a third clock, and causes interference of the light beams. The second clock and the first clock have identical cycles and differing phases. The third clock and the second clock have phases that differ by a 1/2 cycle. Four data modulators modulate the light beams from the clock modulators.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: January 6, 2015
    Assignee: Fujitsu Optical Components Limited
    Inventor: Toru Yamazaki
  • Patent number: 8919650
    Abstract: An optical device has a tube including a tube wall defining a viewing bore. A light source is in communication with the viewing bore for illuminating an aim point visible in the viewing bore. A control system includes a circuit board supported by the tube exterior of the viewing bore. The control system is in communication with the light source for controlling brightness of the illuminated aim point. The control system includes a light sensor mounted to the circuit board and extending from the circuit board through the tube wall into the viewing bore for sensing light in the viewing bore.
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: December 30, 2014
    Assignee: Browe, Inc
    Inventors: Brian K. Browe, Brian S. Schaupeter, Jon Graban
  • Patent number: 8900897
    Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: December 2, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Philip Kraus, Thai Cheng Chua, Yoga Saripalli
  • Patent number: 8824036
    Abstract: A thermally stabilized, high speed, micrometer-scale silicon electro-optic modulator is provided. Methods for maintaining desired temperatures in electro-optic modulators are also provided. The methods can be used to maintain high quality modulation in the presence of thermal variations from the surroundings. Direct current injection into the thermally stabilized electro-optic modulator is used to maintain the modulation performance of the modulator. The direct injected current changes the local temperature of the thermally stabilized electro-optic modulator to maintain its operation over a wide temperature range.
    Type: Grant
    Filed: March 19, 2010
    Date of Patent: September 2, 2014
    Assignee: Cornell University
    Inventors: Sasikanth Manipatruni, Rajeev Dokania, Alyssa B. Apsel, Michal Lipson
  • Patent number: 8818205
    Abstract: A modulation method, especially an optical modulation method, using the principle of discrete IQ modulation. The modulation method includes generating a carrier signal (Sc) and splitting the carrier signal at a splitting position in an I branch signal and a Q branch signal; modulating the amplitude of the I branch signal according to a first modulation signal and modulating the amplitude of the Q branch signal according to a second modulation signal, each of the first and second modulation signals being arranged to adopt a given number of values according to a given number of constellation points of a given modulation scheme; phase shifting the signal in the Q branch versus the signal in the I branch; and combining the signals in the I branch and Q branch at a combining position. The combined modulated signal (Stx,mod) is arranged to be transmitted over a transmission path.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: August 26, 2014
    Assignee: ADVA Optical Networking SE
    Inventor: Michael Eiselt
  • Patent number: 8804226
    Abstract: An optical modulator unit, an optical modulator, and a method of fabricating are provided. The optical modulator unit includes a first contact layer transmitting infrared rays, a lower reflection layer disposed on the first contact layer, an active layer, including a multiple quantum well, disposed on the lower reflection layer, and an upper reflection layer disposed on the active layer. The optical modulator includes a plurality of optical modulator units sharing the first contact layer. The method includes sequentially stacking a first contact layer, a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer on a substrate; etching the second contact layer, the upper reflection layer, the active layer, and the lower reflection layer, exposing a surface of the first contact layer; forming a first electrode on the first contact layer; and forming a second electrode on the second contact layer.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: August 12, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-hun Lee, Chang-young Park, Jo-ho Lee
  • Patent number: 8792792
    Abstract: [PROBLEM] Providing an optical source that outputs optical frequency modulated light having a constant output optical intensity. [MEANS FOR SOLVING THE PROBLEM] Provided is a light source apparatus that outputs an optical signal having an optical frequency corresponding to a frequency control signal, the light source apparatus including a laser light source section that outputs laser light having an optical frequency corresponding to the frequency control signal; and an optical intensity adjusting section that compensates for intensity change of the laser light to output laser light in which the intensity change caused by a change in the optical frequency is restricted.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: July 29, 2014
    Assignee: Advantest Corporation
    Inventors: Shin Masuda, Kazunori Shiota
  • Patent number: 8712252
    Abstract: To efficiently apply jitter to an optical signal using a simple configuration, provided is an optical signal output apparatus that outputs an optical pulse pattern signal including jitter, the optical signal generating apparatus comprising a light source section that outputs an optical signal having an optical frequency corresponding to a frequency control signal; an optical modulation section that modulates the optical signal output by the light source section, according to a designated pulse pattern; and an optical jitter generating section that delays an optical signal passed by the optical modulation section according to the optical frequency, to apply jitter to the optical signal.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: April 29, 2014
    Assignee: Advantest Corporation
    Inventors: Shin Masuda, Kazunori Shiota
  • Patent number: 8675272
    Abstract: An optical modulator, methods of manufacturing and operating the same, and an optical apparatus including the optical modulator are disclosed. The optical modulator includes an electro-optical converter and an optical-electric converter, stacked perpendicular to a substrate, and a gate transistor. The gate transistor gates a signal transmitted to the electro-optical converter from the optical-electric converter and allows charges generated in the optical-electric converter and charges remaining in the electro-optical converter to flow while bypassing the electro-optical converter when gating ON is performed.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: March 18, 2014
    Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
    Inventors: Yong-chul Cho, Jae-hyung Jang, Yong-hwa Park, Chang-soo Park, Jong-In Song
  • Patent number: 8565614
    Abstract: A digital data transmission device is provided comprising optical waveguide architecture, a sideband generator, a modulation controller, an optical filter, a data mapping unit, and a phase controller. The optical waveguide architecture is configured to direct an optical signal through the sideband generator and the optical filter. The sideband generator comprises an electrooptic interferometer comprising first and second waveguide arms. The modulation controller is configured to generate an electrical drive signal to drive the sideband generator at a control voltage that is substantially larger than V? to generate optical frequency sidebands about a carrier frequency of the optical signal. The optical filter is configured to discriminate between the optical frequency sidebands and the optical carrier frequency such that optical sidebands of interest can be directed through the optical waveguide architecture as an optical millimeter wave signal.
    Type: Grant
    Filed: May 1, 2009
    Date of Patent: October 22, 2013
    Assignee: Battelle Memorial Institute
    Inventor: Richard W. Ridgway
  • Patent number: 8503057
    Abstract: A device comprising: two mutually immiscible conductive liquids arranged to form an interface therebetween; a plurality of nanoparticles localised at the said interface, the said nanoparticles each having a first region formed of a semiconductor having a first bandgap, the first region being surrounded by a second region having a second bandgap, the second bandgap being larger than the first bandgap; and means for applying an electric field to the said nanoparticles and thus, through the Stark effect, altering the optical absorption or emission characteristics of the nanoparticles.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: August 6, 2013
    Assignee: University of Iowa Research Foundation
    Inventors: Michael Edward Flatte, Alexei Kornyshev, Michael Urbakh
  • Patent number: 8492863
    Abstract: Optical modulator having wide bandwidth based on Fabry-Perot resonant reflection is disclosed. The optical modulator includes: a bottom Distributed Bragg Reflector (DBR) layer; a top DBR layer including at least one layer, and a modified layer; and an active layer disposed between bottom and top DBR layers, wherein the at least one layer includes at least one pair of a first refractive index layer having a first refractive index and a second refractive index layer having a second refractive index, the modified layer includes at least one pair of a third refractive index layer having a third refractive index and a fourth refractive index layer having a fourth refractive index, the third and the fourth refractive indexes being different, and at least one of the third and the fourth refractive index layers has a second optical thickness that is not ?/4 or that is not an odd multiple thereof.
    Type: Grant
    Filed: November 2, 2010
    Date of Patent: July 23, 2013
    Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
    Inventors: Yong-chul Cho, Yong-tak Lee, Yong-hwa Park, Byung-hoon Na, Kwang-mo Park, Chang-soo Park
  • Patent number: 8432599
    Abstract: An optical image modulator and a method of manufacturing the same. The optical image modulator includes a substrate, an N electrode contact layer formed on the substrate, a lower distributed Bragg reflection (DBR) layer, a quantum well layer, an upper DBR layer, and a P electrode contact layer sequentially stacked on the N electrode contact layer, a P electrode formed on the P electrode contact layer, and an N electrode formed on the N electrode contact layer. The N electrode is a frame that surrounds the lower DBR layer.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: April 30, 2013
    Assignees: Samsung Electronics Co., Ltd., Gwangju Institute of Science and Technology
    Inventors: Yong-Chul Cho, Yong-Tak Lee, Yong-Hwa Park, Byung-Hoon Na, Bong-Kyu Jeong
  • Patent number: 8427732
    Abstract: An uncooled optical semiconductor device includes: a semiconductor laser outputting laser light; an electric field absorption optical modulator absorbing light depending on a voltage applied to the electric field absorption optical modulator; a monitor photodiode monitoring backlight of the semiconductor laser; an auto power control circuit feeding back current of the monitor photodiode to a bias current supplied to the semiconductor laser; and a bias circuit feeding back an average value of a light absorption current to control a bias voltage applied to the electric field absorption optical modulator. The light absorption current is generated when the electric field absorption optical modulator absorbs the laser light.
    Type: Grant
    Filed: August 3, 2011
    Date of Patent: April 23, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventor: Norio Okada
  • Publication number: 20130077150
    Abstract: An optical modulator unit, an optical modulator, and a method of fabricating are provided. The optical modulator unit includes a first contact layer transmitting infrared rays, a lower reflection layer disposed on the first contact layer, an active layer, including a multiple quantum well, disposed on the lower reflection layer, and an upper reflection layer disposed on the active layer. The optical modulator includes a plurality of optical modulator units sharing the first contact layer. The method includes sequentially stacking a first contact layer, a lower reflection layer, an active layer, an upper reflection layer, and a second contact layer on a substrate; etching the second contact layer, the upper reflection layer, the active layer, and the lower reflection layer, exposing a surface of the first contact layer; forming a first electrode on the first contact layer; and forming a second electrode on the second contact layer.
    Type: Application
    Filed: June 25, 2012
    Publication date: March 28, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-hun LEE, Chang-young PARK, Jo-ho LEE
  • Patent number: 8384980
    Abstract: A semiconductor optical modulation device includes a substrate; a first semiconductor cladding layer of a first conductivity type disposed on the substrate; an optical waveguide layer disposed on the first semiconductor cladding layer, the optical waveguide layer including a first semiconductor optical confinement layer, a second semiconductor optical confinement layer, and an insulating layer disposed between the first semiconductor optical confinement layer and the second semiconductor optical confinement layer, the insulating layer being made of aluminum oxide; a second semiconductor cladding layer of a second conductivity type disposed on the optical waveguide layer; a first electrode electrically connected to the first semiconductor cladding layer; and a second electrode electrically connected to the second semiconductor cladding layer.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: February 26, 2013
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Chie Fukuda
  • Patent number: 8378465
    Abstract: The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus for optical modulation includes a first silicon layer having one or more trenches formed therein, a dielectric layer lining the first silicon layer, and a second silicon layer disposed on the dielectric layer and filling the trenches.
    Type: Grant
    Filed: January 12, 2011
    Date of Patent: February 19, 2013
    Assignee: International Business Machines Corporation
    Inventors: Yurii A. Vlasov, Fengnian Xia
  • Patent number: 8349632
    Abstract: Provided is an organic light-emitting display device that can display a full color image by forming a simple structure of light-emitting layers and a method of manufacturing the same. The organic light-emitting display device includes a substrate; a first electrode layer formed on the substrate; a second electrode layer which is formed above the first electrode layer and faces the first electrode layer; and a light-emitting layer interposed between the first electrode layer and the second electrode layer, wherein the light-emitting layer comprises first and second light-emitting layers respectively corresponding to first and second pixels having different colors from each other, and the first light-emitting layer is commonly formed in the first and second pixels, and the second light-emitting layer is formed in the second pixel.
    Type: Grant
    Filed: June 23, 2009
    Date of Patent: January 8, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventor: Jun-Yeob Lee
  • Patent number: 8320037
    Abstract: An electro-optic device is provided. The electro-optic device includes a junction layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer to which a reverse vias voltage is applied. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have an about 2 to 4-time doping concentration difference therebetween, thus making it possible to provide the electro-optic device optimized for high speed, low power consumption and high integration.
    Type: Grant
    Filed: January 5, 2010
    Date of Patent: November 27, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jeong Woo Park, Jongbum You, Gyungock Kim