Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

Abstract: A method is described to improve performance of a magneto-resistive (MR) sensor under conditions of high areal density. The free layer is partially etched away, the removed material being replaced by a magnetic flux guide structure that reduces the free layer's demagnetization field. This in turn reduces the stripe height of the sensor so that the resolution and the read-back signal are enhanced without increasing noise and instability.

Abstract: A spin transfer oscillator including a magnetic stack including at least two magnetic layers, at least one of the two magnetic layers is an oscillating layer that has variable direction magnetization and a current supply device configured to cause the flow of a current of electrons perpendicularly to the plane of the magnetic stack. The magnetic stack includes a device to generate inhomogeneities of current at the level of the surface of the oscillating layer and the intensity of the current supplied by the supply device is selected such that the magnetization of the oscillating layer has a consistent magnetic configuration, the magnetic configuration oscillating as a whole at the same fundamental frequency.

Abstract: A corrosion-resistant magnetic sensor and a method for making the corrosion-resistant magnetic sensor. The magnetic sensor includes a first layer that is a pinned layer, the first layer having a first edge. The magnetic sensor also includes a second layer that can be a non-magnetic metal layer, the second layer having a second edge corresponding to the first edge, wherein the second layer is adjacent the first layer. The magnetic sensor also has a third layer that can be a free layer, the third layer having a third edge which projects outwardly relative to the first edge and the second edge.

Abstract: An apparatus can be generally directed to a magnetic stack having a magnetically free layer positioned on an air bearing surface (ABS). The magnetically free layer can be biased to a predetermined magnetization in various embodiments by a biasing structure that is coupled with the magnetically free layer and positioned distal the ABS.

Abstract: A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.

Abstract: A transducer according to one embodiment comprises a first ferromagnetic layer; a second ferromagnetic layer; and an electrically conductive layer positioned between the ferromagnetic layers; wherein a length of the first ferromagnetic layer in a first direction parallel to a plane of deposition thereof is greater than a length of the electrically conductive layer in the first direction such that a first end of the first ferromagnetic layer extends beyond an end of the electrically conductive layer in the first direction, wherein an electrical current enters or exits the end of the first ferromagnetic layer that extends beyond the end of the electrically conductive layer in the first direction. Additional transducer structures, and systems implementing such transducers, are also disclosed.

Abstract: Embodiments of the present invention provide a practical magneto-resistive effect element for CPP-GMR, which exhibits appropriate resistance-area-product and high magnetoresistance change ratio, and meets the demand for a narrow read gap. Certain embodiments of a magneto-resistive effect element in accordance with the present invention include a pinned ferromagnetic layer containing a first ferromagnetic film having a magnetization direction fixed in one direction, a free ferromagnetic layer containing a second ferromagnetic film having a magnetization direction varying in response to an external magnetic field, an intermediate layer provided between the pinned ferromagnetic layer and the free ferromagnetic layer, and a current confinement layer for confining a current. At least one of the pinned ferromagnetic layer or the free ferromagnetic layer includes a highly spin polarized layer.

Abstract: Various embodiments may be constructed with a trilayer stack that is positioned on an air bearing surface (ABS). The trilayer stack can be configured with a stripe height along an axis orthogonal to the ABS and with first and second magnetic free layers that each has an angled uniaxial anisotropy with respect to the ABS.

Abstract: Various embodiments may be generally directed to a stack capable of reading magnetic data bits. Such a stack can have a non-magnetic spacer layer disposed between a magnetically free layer and a synthetic antiferromagnet (SAF) where the SAF is configured with an anisotropy tuned to a non-normal direction with respect to an air bearing surface (ABS).

Abstract: A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.

Abstract: A spin accumulation magnetic sensor having improved signal strength and efficiency. The spin accumulation magnetic sensor has a detector structure and a spin injection structure and has a non-magnetic, electrically conductive layer extending between the spin injection structure and the detector structure. The detector structure has first and second free layers arranged such that the non-magnetic, electrically conductive layer extends between them and so that they are magnetically anti-parallel coupled with one another. The spin injection structure can also include first and second magnetic layers with the electrically conductive layer extending between them and with the first magnetic layer being pinned and the second magnetic layer being anti-parallel coupled with the first magnetic layer.

Abstract: A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

Abstract: The method according to the present invention includes the steps of: sequentially applying a plurality of different voltages to an MR element and sequentially detecting output signals from the MR element; and eliminating the MR element as a defective product when an evaluation value, based on a difference of SN ratios of the output signals from the MR element respectively obtained for each applied voltage, is less than a threshold value, and selecting the MR element as a non-defective product when the evaluation value is greater than or equal to the threshold value.

Abstract: An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.

Abstract: A method for quasi-static testing a magnetic recording head read sensor is described. The method includes applying a first voltage to a heater in the magnetic recording head and measuring an output of the magnetic recording head read sensor while applying the first voltage to the heater and recording the measured output as a first set of measurements. The method further includes applying a second voltage to the heater in the magnetic recording head and measuring the output of the magnetic recording head read sensor while applying the second voltage to the heater and recording the measured output as a second set of measurements. The first and second sets of measurements are then compared.

Abstract: A current-perpendicular-to-the-plane magnetoresistive sensor structure includes at least an improved top shield structure and optionally also a similar bottom shield structure. The top shield structure includes an antiparallel structure (APS) of two ferromagnetic films and a nonmagnetic antiparallel coupling (APC) film between them. The APC film induces antiferromagnetic (AF) coupling between the two ferromagnetic films so that they have their respective magnetizations oriented antiparallel. An important aspect of the APS is that there is no antiferromagnetic layer adjacent the upper ferromagnetic film, so that the upper ferromagnetic film does not have its magnetization pinned by an antiferromagnetic layer. An electroplated shield layer is formed above the APS.

Abstract: According to one embodiment, there is provided a magnetic head for a three-dimensional magnetic recording/reproducing apparatus, the head executing reading from or writing to a recording medium, utilizing a magnetic resonance, the medium including stacked layers formed of magnetic substances having different resonance frequencies, the head comprising a spin torque oscillation unit and auxiliary magnetic poles. The unit is operable to simultaneously oscillate at a plurality of frequencies to cause the magnetic resonance, when reading or writing. The magnetic poles assist the unit, when reading or writing. Further, according to another embodiment, there is provided a recording magnetic head using a high-frequency assist method and comprising a microwave magnetic field applying unit and a recording magnetic pole. The unit executes writing to a recording medium, and is formed of a plurality of spin torque oscillation elements having phases thereof synchronized. The magnetic pole assists the writing.

Abstract: A nano-oscillator magnetic wave propagation system has a group of aggregated spin-torque nano-oscillators (ASTNOs), which share a magnetic propagation material. Each of the group of ASTNOs is disposed about an emanating point in the magnetic propagation material. During a non-wave propagation state of the nano-oscillator magnetic wave propagation system, the magnetic propagation material receives a polarizing magnetic field. During a wave propagation state of the nano-oscillator magnetic wave propagation system, each of the group of ASTNOs initiates spin waves through the magnetic propagation material, such that a portion of the spin waves initiated from each of the group of ASTNOs combine to produce an aggregation of spin waves emanating from the emanating point. The aggregation of spin waves may provide a sharper wave front than wave fronts of the individual spin waves initiated from each of the group of ASTNOs.

Abstract: A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.

Abstract: A read sensor for a transducer is fabricated. The transducer has a field region and a sensor region corresponding to the sensor. A sensor stack is deposited. A hybrid mask including hard and field masks is provided. The hard mask includes a sensor portion covering the sensor region and a field portion covering the field region. The field mask covers the field portion of the hard mask. The field mask exposes the sensor portion of the hard mask and part of the sensor stack between the sensor and field regions. The sensor is defined from the sensor stack in a track width direction. Hard bias layer(s) are deposited. Part of the hard bias layer(s) resides on the field mask. Part of the hard bias layer(s) adjoining the sensor region is sealed. The field mask is lifted off. The transducer is planarized.

Abstract: According to one embodiment, a magnetic head has a main magnetic pole, a write-shield constituting the main magnetic pole and a magnetic circuit, and a spin torque oscillation element provided between the main magnetic pole and the write-shield. The spin torque oscillation element is provided with a first oscillation layer, a nonmagnetic spin sink layer, a second oscillation layer, a nonmagnetic intermediate layer, and a spin injection layer provided in sequence from the write-shield side to the main magnetic pole side. The nonmagnetic spin sink layer is formed of at least one element selected from the group consisting of Ru, Rh, Ta, W, Cr, Ir, Mo, Re, Nb, Pt, and Pd.

Abstract: A spin torque oscillator and a method of making same. The spin torque oscillator is configured to generate microwave electrical oscillations without the use of a magnetic field external thereto, the spin torque oscillator having one of a plurality of input nanopillars and a nanopillar having a plurality of free FM layers.

Abstract: A method and system provide a magnetic read transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a second shield, and a read sensor between the first shield and the second shield. The read sensor extends along a stripe height direction perpendicular to the ABS. A first portion of the read sensor at the ABS has a first width in a track width direction parallel to the ABS. A second portion of the read sensor is recessed from the ABS along the stripe height direction and has a second width in the track width direction. The second width is greater than the first width.

Abstract: A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes responsive to an external magnetic field, and a spacer layer positioned between the first and second magnetic layers. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes copper and metal intermediate layers and a main spacer layer composed primarily of gallium oxide. The copper and metal intermediate layers are positioned between the main spacer and first magnetic layers. The metal intermediate layer is positioned between the copper and main spacer layers. The metal intermediate layer is composed primarily of at least one from a group of one of magnesium and at least partially oxidized magnesium, and one of aluminum and at least partially oxidized aluminum.

Abstract: A current-perpendicular-to-the-plane magnetoresistive sensor has an exchange-coupled side shield structure on each of two side regions of the sensor and an exchange-coupled top shield structure on the sensor and the two exchange-coupled side shield structures. Each exchange-coupled structure comprises an antiferromagnetic layer and a shield of soft magnetically permeable material exchange-coupled with the antiferromagnetic layer. Each side shield and the top shield has its magnetization oriented generally parallel to the sensor front edge and generally parallel to the plane of the sensor's free ferromagnetic layer. The shields in each exchange-coupled side shield structure and the exchange-coupled top shield structure may be an antiparallel coupled structure of two magnetically permeable films separated by a nonmagnetic coupling film.

Abstract: A method for fabricating a magnetic recording transducer is described. The transducer has an ABS location and a nonmagnetic intermediate layer having a pole trench. The method includes depositing at least one magnetic pole layer having a top surface and a pole tip portion proximate to the ABS location. A first portion of the magnetic pole layer(s) resides in the pole trench. The magnetic pole layer(s) have a seam in the pole tip portion that extends to the top surface. The method also includes cathodically etching a second portion of the magnetic pole layer(s) from the seam at a rate of not more than 0.1 nanometers/second, thereby forming a seam trench in the magnetic pole layer(s). The method also includes refilling the seam trench with at least one magnetic refill layer. At least an additional magnetic pole layer is deposited on the top surface and the magnetic refill layer(s).

Abstract: A radio-frequency oscillator incorporates a magnetoresistive device within which an electron current is able to flow. The device includes a stack including: a magnetic trapped layer, the magnetization of which is of substantially fixed direction; a magnetic free layer; and a non-magnetic intermediate layer-interposed between the free layer and the trapped layer. The oscillator also includes a mechanism capable of making an electron current flow in the layers constituting the stack and in a direction perpendicular to the plane which contains the layers. At least the free layer is devoid of any material at its center. The electron current density flowing through the stack is capable of generating a magnetization in the free layer in a micromagnetic configuration in the shape of a skewed vortex flowing in the free layer around the center of the free layer.

Abstract: A magneto-resistance effect element, including a fixed magnetization layer of which a magnetization is substantially fixed in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer, a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof, a thin film layer, and a functional layer.

Abstract: A magnetic device is provided in one example that comprises a free layer having a magnetic anisotropy. The magnetic anisotropy is at least partially non-uniform. The magnetic device further comprises an antiferromagnetic layer adjacent to and weakly exchange coupled with the free layer, wherein the weak exchange coupling reduces the non-uniformity of the magnetic anisotropy of the free layer.

Abstract: A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component.

Abstract: A method for forming a magnetic tunnel junction cell includes forming a pinning layer, a pinned layer, a dielectric layer and a free layer over a first electrode, forming a second electrode on the free layer, etching the free layer and the dielectric layer using the second electrode as an etch barrier to form a first pattern, forming a prevention layer on a sidewall of the first pattern, and etching the pinned layer and the pinning layer using the second electrode and the prevention layer as an etch barrier to form a second pattern.

Abstract: Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided.

Abstract: The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer.

Abstract: A giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of the spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc.

Abstract: Disclosed herein are magnetic sensors that include: a sensor stack having a front and an opposing back, wherein the front of the sensor stack defines an air bearing surface of the magnetic sensor, and the sensor stack includes: a free layer assembly having a second magnetization direction, that is substantially perpendicular to a plane of each layer of the sensor stack; and a stabilizing structure positioned away from the air bearing surface at the back of the sensor stack.

Abstract: A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes in response to an external magnetic field, and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer, on an air bearing surface, has a larger film thickness at both side edge parts in a track width direction than a film thickness at a central part in a track width direction. When a region of the spacer layer on the air bearing surface is divided into quarters which are both side edge part regions and two central regions such that track width direction lengths are equivalent, an average film thickness of a region where the both side edge regions are combined is preferably larger than a region where the two central regions are combined.

Abstract: An MR element includes a stack, being a pillar or trapezoidal stack, including first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field, and a spacer layer that is positioned between the first magnetic layer and the second magnetic layer, and that is provided with a main spacer layer that is composed of gallium oxide, zinc oxide or magnesium oxide as a primary component, wherein, one part of side surfaces of the stack forms a part of an air bearing surface; and a cover layer that covers at least another part of the side surfaces of the stack and that is composed of gallium oxide as a primary component.

Abstract: An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.

Abstract: Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.

Abstract: Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form.

Abstract: A magnetoresistive effect element (MR element) includes first and second magnetic layers of which relative angles formed by magnetization directions change in relation to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned on a side closer than the second magnetic layer in regards to a substrate above which the magnetoresistive effect element is formed, and the spacer layer includes a main spacer layer made of gallium oxide as the primary component, and a first nonmagnetic layer positioned between the main spacer layer and the first magnetic layer and contains copper and gallium.

Abstract: A method of manufacturing a magnetic head, including a magneto resistance effect (MR) element that reads a magnetic recording medium, is disclosed. A multilayer film is formed on a shield layer. Unnecessary portions of the multilayer film are removed from both sides of the MR element in a first direction orthogonal to a lamination direction of the multilayer film and parallel to the MR element surface facing the magnetic recording medium. An insulating layer is formed on a surface exposed by removal of the unnecessary portions. An integrated soft magnetic layer covering both sides of the MR element in the first direction and an upper side of the MR element is formed, thereby configuring a second shield layer. An anisotropy application layer is formed on the second shield layer, thereby providing exchange anisotropy to the soft magnetic layer, and magnetizing the soft magnetic layer in a predetermined direction.

Abstract: An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

Abstract: Flat, thin AlN membranes and methods of their manufacture are made available. An AlN thin film (2) contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (1), the AlN thin film (2) is formable utilizing a plasma generated by setting inside a vacuum chamber a sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.

Abstract: A fabricating method of a magnetoresistance sensor is provided with cost effective and process flexibility features. Firstly, a substrate is provided. Then, at least one magnetoresistance structure and at least one bonding pad are formed over the substrate, wherein the bonding pad is electrically connected with the magnetoresistance structure. Then, a passivation layer is formed over the magnetoresistance structure and the bonding pad. Then, a magnetic shielding and concentrator structure is formed over the passivation layer at a location corresponding to the magnetoresistance structure. Finally, bonding pad openings is formed on the passivation layer by patterned polyimide, thereby exposing the bonding pad. After bonding pad was opened, the patterned polyimide can be removed or retained as an additional protection layer.

Abstract: An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).

Abstract: A method of fabricating a tunneling magnetoresistance (TMR) reader is disclosed. A TMR structure comprising at least one ferromagnetic layer and at least one nonmagnetic insulating layer is provided. A first thermal annealing process on the TMR structure is performed. A reader pattern definition process performed on the TMR structure to obtain a patterned TMR reader. A second thermal annealing process is performed on the patterned TMR reader.

Abstract: A magneto-resistance effect element includes: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal.