Abstract: A substrate processing apparatus includes a chamber, a susceptor to receive a substrate and provided in the chamber, a gas supply source to supply a predetermined gas into the chamber, and a high frequency power source to treat the substrate by plasma. The susceptor includes a first ceramics base member including a flow passage to let a coolant pass through, a first conductive layer formed on a principal surface and a side surface on a substrate receiving side of the first ceramics base member, and an electrostatic chuck stacked on the first conductive layer and configured to electrostatically attract the wafer received thereon. A volume of the flow passage is equal to or more than a volume of the first ceramics base member. The high frequency power source is configured to supply high frequency power to the first conductive layer.

Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

Abstract: Provided is a barrier seal for an electrostatic chuck in the plasma etching process. The barrier seal comprises multiple sealing portions to block the connecting layer of the electrostatic chuck and the plasma gas. The groove of the electrostatic chuck may be completely filled by the barrier seal. Even one of the multiple sealing portions is destroyed in the plasma etching process by the plasma gas, the barrier seal still prevents leaking of the electrostatic chuck effectively. The barrier seal provides a buffer period for engineers to replace the damaged barrier seal before the leaking occurs. Danger of leaking caused by abrupt breaking of the barrier seal is reduced. Furthermore, the barrier seal facilitates stability and safety of the plasma etching process. The yield of products manufactured by the electrostatic chuck may be improved.

Abstract: Provided are a corrosion-resistant member; a member for an electrostatic chuck; and a process for producing the corrosion-resistant member. The corrosion-resistant member includes an oxide which includes samarium and aluminum and has a perovskite type structure. The member for an electrostatic chuck includes the corrosion-resistant member. The process for producing a corrosion-resistant member includes: mixing aluminum oxide powder and samarium oxide powder with a solvent to prepare a slurry including the aluminum oxide powder and the samarium oxide powder; drying the slurry to prepare a mixed powder including the aluminum powder and the samarium oxide powder, and molding the mixed powder to prepare a green body; and calcinating the green body to prepare a sintered body.

Abstract: An electrostatic chuck table for holding a workpiece includes: a plate-shaped base transmittable with respect to a laser beam having a predetermined wavelength allowing the laser beam to be transmitted through the workpiece, the plate-shaped base having a first surface and a second surface opposite the first surface; an electrostatic attraction electrode assembly transmittable with respect to the laser beam having the predetermined wavelength, the electrostatic attraction electrode assembly being formed on the first surface of the base; and a resin layer transmittable with respect to the laser beam having the predetermined wavelength, the resin layer covering the electrode assembly and providing a holding surface for holding the workpiece thereon. The electrostatic chuck table is used in forming a modified layer within the workpiece held on the holding surface with the laser beam that is applied to the workpiece from the side of the second surface of the base.

Abstract: Electro-adhesion grippers for holding workpieces, are disclosed as including a first electrode and a second electrode that mutually engage, in a plan view of the electrodes, wherein, at least in a sub-region, the first electrode and the second electrode correspond to the border lines of a two-dimensional fractal space-filling curve of a second or higher order, and wherein the border lines result from enclosing a shape of the space-filling curve on both sides on an auxiliary grid that is offset with respect to a grid of the space-filling curve by half a grid spacing in each grid direction.

Abstract: An aspect of the present invention has an object to provide an electrostatic chuck device which is provided with a plurality of divided heaters and in which uniform temperature control of a zone which is heated by each heater can be performed with a simple configuration.

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

Abstract: Described herein are an electrostatic chuck and method for using the same. In one example, an electrostatic chuck is provided that includes a plurality of independently replaceable electrostatic chuck assemblies mounted in an array across a chuck body. The electrostatic chuck assemblies define a substrate support surface suitable for supporting a large area substrate. At least a first electrostatic chuck assembly of the plurality of electrostatic chuck assemblies is operable independent of an operation of a second electrostatic chuck assembly of the plurality of electrostatic chuck assemblies. In yet another example, a method for chucking a substrate is provided.

Abstract: A substrate holder for use in a lithographic apparatus and configured to support a substrate, the substrate holder including: a main body having a main body surface; and a plurality of burls projecting from the main body surface; wherein each burl has a distal end configured to engage with the substrate; the distal ends of the burls substantially conform to a support plane whereby a substrate can be supported in a substantially flat state on the burls; a frictional force between the distal end of each burl and a substrate engaged therewith arises in a direction parallel to the support plane in the event of a relative movement of the substrate and substrate holder in the direction; and distal end surfaces of the burls are provided with a release structure configured so that the frictional force is less than would arise in the absence of the release structure.

Abstract: Described herein are an electrostatic chuck and method for using the same. In one example, an electrostatic chuck is provided that includes a plurality of independently replaceable electrostatic chuck assemblies mounted in an array across a chuck body. The electrostatic chuck assemblies define a substrate support surface suitable for supporting a large area substrate. At least a first electrostatic chuck assembly of the plurality of electrostatic chuck assemblies is operable independent of an operation of a second electrostatic chuck assembly of the plurality of electrostatic chuck assemblies. In yet another example, a method for chucking a substrate is provided.

Abstract: An electrostatic chuck includes an anisotropic heat conductor which is disposed between an attraction substrate and a first heater member, and has an upper surface and a lower surface, and a coefficient of thermal conductivity which varies depending on directions. The anisotropic heat conductor is disposed so that the coefficient of thermal conductivity in a plane direction is larger than the coefficient of thermal conductivity in a thickness direction. Further, the electrostatic chuck includes metal layers which are joined to the anisotropic heat conductor so as to cover the upper surface and the lower surface of the anisotropic heat conductor, and an adhesive layer which is provided on a surface of each metal layer, and joins the metal layer to the attraction substrate or the heater member. Moreover, at least one of the metal layers is a fused metal layer formed by solidifying a melted metal.

Abstract: A cleaning fixture assembly for protecting an electrostatic chuck suitable for supporting semiconductor substrates during a cleaning process contains a plate configured to align with and engage a backside of the electrostatic chuck, the plate having an annular seal portion surrounding a pocket. The cleaning fixture assembly also contains a first O-ring engaging the annular seal portion of the plate, a plurality of through-holes in the pocket of the plate, and a plurality of O-rings surrounding the plurality of through-holes in the pocket of the plate. The plurality of through-holes are configured to be aligned with and in fluid communication with lift pin holes and helium holes in the backside of the electrostatic chuck, and the plurality of O-rings are positioned to allow cleaning media to engage the lift pin holes and helium holes in the electrostatic chuck during a cleaning process while sealing the cleaning media from reaching the backside of the electrostatic chuck.

Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of protrusions extending to a height above portions of the surface layer surrounding the protrusions to support the substrate upon the protrusions during electrostatic clamping of the substrate. The protrusions are substantially equally spaced across the surface layer as measured by a center to center distance between pairs of neighboring protrusions.

Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).

Abstract: A feeder-cover structure includes a power feeder including a socket and a plug fitted together, a cover structure that covers and seals the power feeder, and a supply mechanism that supplies dry air or an inert gas into the cover structure. A gap is formed between the power feeder and the cover structure such that the dry air or the inert gas is supplied through the gap into the cover structure.

Abstract: A substrate holding apparatus includes a baseplate, a heating unit disposed over the baseplate, and an electrostatic chuck disposed on the heating unit, wherein the heating unit includes a heating element having at least one roughened surface and an insulating layer enclosing the heating element, and the insulating layer and the electrostatic chuck are directly bonded to each other.

Abstract: A method and apparatus for discharging a residual charge from a substrate support. In one example, a substrate support is provided that includes a body, an electrode disposed in the body, a radiation emitter and a diffuser. The body has one or more holes formed in a workpiece support surface, the workpiece support surface configured to accept a substrate thereon. The electrode is configured to electrostatically hold a substrate to the workpiece support surface. The radiation emitter is disposed in a first hole of the one or more holes formed in the workpiece support surface. The radiation emitter is configured to emit electromagnetic energy out of the first hole. The diffuser is disposed in first hole over the radiation emitter.

Abstract: A lithography apparatus is provided. The lithography apparatus a reticle having a first surface and a second surface facing each other, and a pattern region formed on the first surface, a reticle stage facing the second surface of the reticle, the reticle stage to chuck the reticle, a protection conductor within a chamber housing the reticle and the reticle stage; and a power source to supply a voltage to the protection conductor.

Abstract: A wafer support structure includes a ceramic tray plate having a plurality of wafer placement portions in which wafers are placed, and arranged on an upper surface of a ceramic base plate. The base plate incorporates a base-side electrode, and the tray plate incorporates a tray-side electrode. In the wafer support structure, voltages applied to the base-side electrode and the tray-side electrode are adjusted in a state where the wafers are placed in the wafer placement portions. As a result, an electrostatic force acting to attract the base plate and the tray plate to each other is generated, and an electrostatic force acting to attract the tray plate and the wafers to each other is generated.

Abstract: The invention relates to an apparatus for electrostatic coupling of a substrate with a substrate carrier, wherein the apparatus includes a flexible plastic carrier film on which an electrically contactable electrode structure is unilaterally deposited, and a cover layer which can be brought into contact with the electrode structure on the side of the electrode structure facing away from the carrier film, wherein the apparatus is configured such that, in a coupled state, the same is arranged at least in sections between the substrate and the substrate carrier and, in a non-coupled state, the same can be removed from the substrate carrier in a reusable manner.

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. Trenches are formed in the thermally conductive base approximately concentric around a center of the thermally conductive base. The trenches extend from the upper surface towards a lower surface of the thermally conductive base without contacting the lower surface of the thermally conductive base. The thermally conductive base includes thermal zones. The substrate support assembly further includes a thermally insulating material disposed in the trenches. The thermally insulating material in a trench of the trenches provides a degree of thermal isolation between two of the thermal zones separated by the trench at the upper surface of the thermally conductive base.

Abstract: An electrostatic chuck device includes an electrostatic chuck member and a temperature controlling base member. The electrostatic chuck member has a ceramic plate having a mounting surface on which a plate-shaped sample is mounted, and an electrode for electrostatic attraction provided on the other surface on the side opposite the mounting surface of the ceramic plate. The temperature controlling base member is disposed on the surface on the side opposite the ceramic plate side of the electrode for electrostatic attraction and cools the electrostatic chuck member. The ceramic plate has a dike portion which extends to the temperature controlling base member side and surrounds the electrode for electrostatic attraction, the temperature controlling base member has a groove portion accommodating an end part of the dike portion, and a space between the groove portion and the dike portion is filled with a filling part formed of a resin material.

Abstract: A process for sorting materials using material-selective electroadhesive grippers is disclosed. At least one of an electroadhesive surface or a plurality of articles is manipulated such that multiple ones of the plurality of articles are at least intermittently proximate the electroadhesive surface. Voltage is applied to one or more electrodes in the electroadhesive surface to thereby cause the electroadhesive surface to selectively adhere to a subset of the plurality of articles based on the subset of the plurality of articles having different material properties than others of the plurality of articles. While the voltage is applied, the electroadhesive surface is moved with respect to the others of the plurality of articles to thereby separate the subset of the plurality of articles from the others of the plurality of articles.

Abstract: A lithography apparatus transfers a pattern of an original to a substrate. The apparatus includes an electrode structure arranged so as to surround a side surface of one of the substrate and the original, and a power supply configured to supply an alternating voltage to the electrode structure. The electrode structure includes a plurality of electrode groups electrically insulated from each other, each electrode group including a plurality of electrodes electrically connected to each other, and the power supply supplies alternating voltages having different phases to the plurality of electrode groups.

Abstract: A substrate processing apparatus includes an electrostatic chuck which is made up of a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a first heater section in the dielectric plate between the chuck electrode and the base. The first heater section includes first heaters that are separated from each other in a first direction, and respective first upper plate electrodes disposed between the first heaters and the base. The first upper plate electrodes are separated from each other in the first direction and respectively connected to the first heaters.

Abstract: Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.

Abstract: Systems and methods for statistical data decimation are described. The method includes receiving a variable from a radio frequency (RF) system, propagating the variable through a model of the RF system, and counting an output of the model for the variable to generate a count. The method further includes determining whether the count meets a count threshold, generating a statistical value of the variable at the output of the model upon determining that the count meets the count threshold, and sending the statistical value to the RF system to adjust the variable.

Abstract: Provided are a work heating device which is capable of heating a work piece with high soaking properties as well as fine temperature control and which remains highly reliable over a long-term use by preventing the deformation or the like of a chuck member, and a work treating device that uses the work heating device. The work heating device is a work heating device in which the chuck member including a work attraction electrode for work attraction and a heater member including a heating element for work heating are layered, and which is capable of heating with the heater member the work piece stuck by attraction on the chuck member side, in which the heater member includes a chuck attraction electrode for causing the chuck member to stick by attraction, between a surface of the heater member that is opposed to the chuck member and the heating element, so that the chuck member and the heater member are layered detachably.

Abstract: Systems and methods for aligning a transfer head assembly with a substrate are disclosed. In an embodiment a pivot mount is used for generating a feedback signal in a closed-loop motion control system. In an embodiment, the pivot mount includes a plurality of spring arms, with each spring arm including a switch-back along an axial length of the spring arm such that a pair of first and second lengths of the spring arm are immediately adjacent the switch-back and are parallel to each other. A first strain sensing element is located at the first length, and a second strain sensing element is located at the second length.

Abstract: A substrate carrier system is provided. The substrate carrier system includes a substrate carrier body, an electrode assembly, a support base, and a controller. The substrate carrier body has a substrate supporting surface, and an electrode assembly is disposed in the substrate carrier body. The electrode assembly includes a plurality of laterally spaced apart electrode sets. Each electrode set includes a first electrode interleaved with a second electrode. The support base supports the substrate carrier body. The controller is configured to: select a first group of the electrode sets and a second group of the electrode sets from the plurality of the electrode sets; operate the first group of the electrode sets in a first chucking mode; simultaneously operate the second group of the electrode sets in a second chucking mode; and selectively switch at least one electrode set from the first group to the second group.

Abstract: The invention relates to a tester apparatus of the kind including a portable supporting structure for removably holding and testing a substrate carrying a microelectronic circuit. An interface on the stationary structure is connected to the first interface when the portable structure is held by the stationary structure and is disconnected from the first interface when the portable supporting structure is removed from the stationary structure. An electrical tester is connected through the interfaces so that signals may be transmitted between the electrical tester and the microelectronic circuit to test the microelectronic circuit.

Abstract: An imprint apparatus for transferring a pattern to an imprint material using a mold includes a substrate holding mechanism and a control unit. The substrate holding mechanism is configured to be divided into a plurality of areas, capable of varying an attracting force for attracting the substrate in each of the areas and to hold the substrate. The control unit is configured to, when a plurality of shots is formed on the substrate, control an imprint operation of transferring the pattern to the plurality of shots which are not adjacent to one another, makes the attracting force in the area of the substrate holding mechanism corresponding to the shot to which the pattern is transferred among the plurality of areas smaller than the attracting force at the time of the imprint operation and suck the substrate.

Abstract: An alumina sintered body according to the present invention has a degree of c-plane orientation of 90% or more as determined by Lotgering's method from an X-ray diffraction profile obtained by irradiating a plate surface with X-rays in a range of 2?=20° to 70°. The alumina sintered body has no pores when a cross-sectional surface formed in a direction perpendicular to the plate surface is polished using an Ar+ ion beam and a mask and is examined under a scanning electron microscope at a magnification of 5,000 times. The alumina sintered body has a total mass fraction of impurity elements other than Mg and C of 100 ppm or less. This alumina sintered body has a high degree of orientation, high density, and high purity and thus has a higher optical translucency than those known in the art.

Abstract: Embodiments disclosed herein generally relate to a substrate carrier system suitable for clamping a substrate and optionally a mask, the substrate carrier system having a stack of removable protective layers. In one embodiment, substrate carrier system is provide that includes a substrate carrier body having a protective layer stack disposed an outer mounting surface of the substrate carrier body. The substrate carrier body is configured to be transported into and out of a processing chamber. The protective layer stack has a plurality of removable protective layers which can be removed as needed to expose a “new” surface for chucking a substrate thereon.

Abstract: In various aspects of the disclosure, a semiconductor substrate processing system may include an electrostatic chuck for holding a semiconductor substrate attached to an electrically insulating carrier; and an AC power supply electrically coupled to the electrostatic chuck.

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Abstract: The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.

Abstract: A polycrystalline CaF2 member includes a combined assembly of a plurality of polycrystalline bodies made from CaF2 that are pressure bonded together.

Abstract: A method of manufacturing an electrostatic chuck includes providing a dielectric substrate having a surface which is constituted by a bottom face, and a plurality of projecting portions protruding from the bottom face, the plurality of projecting portions including top faces to come in contact with the processing target object, and side faces extending from the bottom face to the top faces, respectively; and forming a protective film made of yttrium oxide on the side faces of the plurality of projecting portions and the bottom face such that the top faces are exposed.

Abstract: A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

Abstract: Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

Abstract: A manufacturing method of a display device includes locating a base member on a support substrate; and removing a part of the support substrate by preventing a first surface portion having a predetermined region in a border plane between the support substrate and the base member from being irradiated with laser light through the support substrate, whereas irradiating a second surface portion, other than the predetermined region, in the border plane between the support substrate and the base member with the laser light through the support substrate.

Abstract: Sample loading device and electrostatic levitation apparatus. The electrostatic levitation apparatus includes a sample storage part including a rod-shaped sample standby part having an external diameter of a first diameter and a rod-shaped sample loading part having an external diameter of a second diameter and a sample cover part covering the sample standby part. The sample storage part has a loading bar inserting hole formed in its center. The loading bar inserting hole is formed through the sample standby part and is formed successively through a portion of the sample loading part. The sample standby part has sample storage vertical through-holes. The sample loading part has a single sample transfer vertical through-hole. The sample transfer vertical through-hole is formed on a surface where the sample storage vertical through-hole is viewed, penetrates the sample loading part, and is connected to the loading bar inserting hole.

Abstract: The present invention discloses a packaging apparatus and a packaging device. The packaging apparatus comprises a mask plate and a control circuit that is electrically connected to the mask plate and is used to control the mask plate such that the mask plate electrostatically adsorbs a first substrate or release the first substrate. In the technical solutions of the present invention, the mask plate is controlled by the control circuit such that the mask plate electrostatically adsorbs or releases the first substrate without the need to use the alignment mechanism of mechanical fixing type to fix the first substrate. By completely adsorbing the first substrate by the mask plate in a way of electrostatic adsorption, the deformation of the first substrate and the generation of bubbles between the first substrate and the second substrate are avoided, the alignment precision is improved, and the slip-off of the first substrate from the mask plate during the process of pressing is avoided.

Abstract: An electrostatic chuck includes a base member and an electrostatic chuck substrate. The base member includes a cooling path. The electrostatic chuck substrate is connected to an upper surface of the base member through an adhesive layer so as to attract a substrate to be mounted. The cooling path includes an introduction portion, a discharge portion and a conduit. The cooling medium is introduced from an outside of the base member to the introduction portion. The cooling medium is discharged from the discharge portion. The conduit includes a start end portion communicating with the introduction portion and a final end portion communicating with the discharge portion. The introduction portion is inclined toward a lower surface of the base member and at a predetermined angle with respect to an axis perpendicular to the upper surface. The introduction portion extends from the lower surface toward the start end portion.

Abstract: In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer extending at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer extending at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.

Abstract: A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A pulse current pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the pulse current pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base, wherein each of the plurality of thermal isolators provides approximate thermal isolation between two of the plurality of thermal zones at the upper surface of the thermally conductive base.

Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.