Abstract: A tray mounted on an electrostatic chuck includes an accommodation recess configured to accommodate a substrate, a bottom plate portion placed on the electrostatic chuck, a coating film layer made of a material different from the bottom plate portion and formed on an upper surface of the bottom plate portion, and an opening portion penetrating the coating film layer in a thickness direction. The accommodation recess includes an inner side surface of the opening portion and an upper surface of the bottom plate portion exposed from the opening portion. The coating film layer has a multilayer structure including a first coating film having higher plasma resistance than the bottom plate portion and a second coating film laminated on an upper surface of the first coating film and having higher plasma resistance than the first coating film. The first coating film is thicker than the second coating film.

Abstract: An electronic component handling apparatus that handles a DUT or a carrier accommodating the DUT, including: a pressing device that: electrically connects the DUT to a socket by pressing the DUT or the carrier toward the socket, and includes: a temperature control device that: controls a temperature of the DUT, and includes: a heater unit that is a heat source, the heater unit including: a flat heater; a first heat transfer material disposed on a first main surface of the flat heater; and a second heat transfer material disposed on a second main surface of the flat heater.

Abstract: An article of apparel can include or use an electroadhesive clutch device. The device can include an elongate encasing for a first electrode assembly and a second electrode assembly each having a respective first and second electrode. The first and second electrodes can be at least partially overlapping and configured to slide or move relative to each other. The device can include an electrical signal generator configured to provide first and second signals to the first and second electrode assemblies, respectively, wherein the first electrode assembly is configured to slide laterally relative to the second electrode assembly when the first and second signals are not applied, and is configured to remain static relative to the second electrode assembly when the first and second signals are applied. The apparel can include a textile material to which the encasing is attached at least at a first end of the encasing.

Abstract: A stage includes a first mounting part on which a substrate is mounted, a second mounting part on which an edge ring surrounding a peripheral edge of the substrate is mounted, the second mounting part being lower than the first mounting part, a first bonding layer configured to bond a base to the first mounting part, a second bonding layer configured to bond the base to the second mounting part, and a seal member configured to close a space between the first mounting part and the second mounting part by deformation of the seal member above the first bonding layer and the second bonding layer while contacting with each of the first mounting part and the second mounting part.

Abstract: A wafer placement includes an alumina substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a brittle cooling substrate which is bonded to a lower surface of the alumina substrate, and in which a refrigerant flow path is formed; and a ductile connection member stored in a storage hole opened in a lower surface of the cooling substrate in a state of restricted axial rotation and in a state of being engaged with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section, wherein the storage hole is provided in the refrigerant flow path.

Abstract: A substrate test apparatus is provided that can measure a dechucking force with high reliability. The substrate test apparatus includes an electrostatic chuck, a normal-force measuring unit disposed on the electrostatic chuck to be capable of pushing or pulling the substrate vertically, an electrostatic-chuck power supplying unit for applying a driving voltage and a first ground voltage to the electrostatic chuck, and a substrate power supplying unit for applying a second ground voltage to the substrate, wherein the substrate test apparatus performs steps including applying the driving voltage to the electrostatic chuck and charging the substrate by applying the second ground voltage to the substrate, subsequently discharging the substrate by applying the first ground voltage to the electrostatic chuck and by applying the second ground voltage to the substrate, and subsequently measuring a dechucking force of the substrate by pulling the substrate vertically by the normal-force measuring unit.

Abstract: An electrostatic chuck device includes: an electrostatic chuck plate having a dielectric substrate having a placement surface on which a wafer is placed and an adsorption electrode positioned in the dielectric substrate; a metal base supporting the electrostatic chuck plate from a back surface side opposite to the placement surface; and a focus ring installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface. The electrostatic chuck plate has a ring adsorption region which is adsorbed to the focus ring and is located on a surface positioned on the same side as the placement surface and has a base adsorption region which is adsorbed to the metal base and located on a back surface opposite to the placement surface.

Abstract: The inventive concept relates to a substrate support unit provided in an apparatus for treating a substrate using plasma. In an embodiment, the substrate support unit includes a dielectric plate on which the substrate is placed, a lower electrode that is disposed under the dielectric plate and that has a first diameter, a power supply rod that applies RF power to the lower electrode and has a second diameter, and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, in which the through-hole has a third diameter.

Abstract: A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.

Abstract: An electrostatic chuck includes: a base body having: a mounting face on which an object to be adsorbed is to be mounted; and a back face that is opposite to the mounting face; an insulating layer that is formed on the back face; a heating element that is built in the insulating layer and configured to generate heat; and at least one thermal diffusion layer that is built in the base body and configured to diffuse the heat generated by the heating element. The at least one thermal diffusion layer is formed of a material higher in thermal conductivity than the base body.

Abstract: Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic top plate having a top surface with a processing region. One or more electrodes is within the ceramic top plate. A plurality of mesas is within the processing region and on the top surface of the ceramic plate or vertically over an edge of one of the one or more electrodes.

Abstract: The present invention provides an electrode pattern structure of a concentric-circular-structured electrostatic chuck, and is related to the field of semiconductor and material science. An electrode unit of an electrostatic chuck is divided into a plurality of size-reduced electrode arc-bands, and by means of arrangement of inter-ring connection openings of the size-reduced electrode arc-bands, the electrodes of the entire electrostatic chuck can be divided into any desired number of electrodes. In the electrode pattern structure of the concentric-circular-structured electrostatic chuck, the electrostatic chuck electrode of such a structure can, on the one hand, minimize division units to be advantageous for reduction of residual thermal stress, and on the other hand, avoid generation of isolated electrode during the process of dividing. This is an electrostatic chuck electrode that has excellent symmetry and has a uniform and simple structure.

Abstract: Methods and apparatus for clamping a substrate comprise i. placing a substrate on a clamping surface of a substrate support having a plurality of electrodes spaced from one another including a first electrode and a second electrode; ii. measuring substrate bow of the substrate; iii. determining, based on the measured substrate bow, a first voltage to be applied to the first electrode and a second voltage to be applied to the second electrode, wherein the first voltage is an AC voltage and the second voltage is an AC or a DC voltage; and iv. applying the first voltage to the first electrode and the second voltage to the second electrode to clamp the substrate to the substrate support.

Abstract: A substrate processing apparatus is provided. The apparatus comprises a chamber; a substrate support which is arranged in the chamber and has at least one first gas supply path; and at least one control valve configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path. The substrate support includes a base, and an electrostatic chuck which is arranged on the base and has an upper surface. The upper surface has a plurality of protrusions and a first annular groove group. The first annular groove group comprises a first inner annular groove, a first intermediate annular groove, and a first outer annular groove. Any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path.

Abstract: An electrostatic chuck device containing a substrate, a stack stacked on an upper surface of the substrate in the thickness direction, and a ceramic layer stacked on an upper surface of the stack in the thickness direction. A sleeve formed from an insulating material is inserted into a through-hole that penetrates through the substrate and the stack in the thickness direction. The upper surface of the sleeve in the thickness direction has a two-level structure including a first upper surface positioned on the same plane as an upper surface of the substrate in the thickness direction, and a second upper surface positioned above the first upper surface in the thickness direction of the sleeve and disposed proximate to the ceramic layer. In a plan view, an edge portion of the stack is disposed on top of the first upper surface.

Abstract: There is provided an electrostatic chuck assembly including: an electrode-embedded ceramic plate; a cooling plate that supports a bottom surface of the ceramic plate and has an internal space of an annular or arcuate shape; an internal fixation member of an annular or arcuate shape accommodated in the internal space so as to be rotatable about a central axis of the cooling plate; female threads in a multiple of n, which is an integer of 2 or more, spaced apart from each other in the internal fixation member; and n insertion holes for insertion of bolts for being fixed to a chamber, the insertion holes each being provided at the bottom of the cooling plate such that one set of n female threads is exposed. Each of the female threads is disposed such that another set of n female threads is exposed in the insertion holes when rotated.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber configured to treat a substrate; a transfer assembly configured to transfer the substrate to the process chamber; and a diagnosis unit configured to detect an abnormal state of the transfer assembly, and wherein the transfer assembly comprises: a housing having a transfer space; and a transfer robot configured to transfer the substrate to the process chamber, and wherein the diagnosis unit comprises: a detection member for detecting an air vibration generated within the housing; and a diagnosis member for diagnosing a driving unit of the transfer assembly based on the air vibration detected by the detection member.

Abstract: Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.

Abstract: A substrate processing apparatus and a method of fabricating the same are proposed. A bonding layer, by which a chuck body and a base plate of an electrostatic chuck device are bonded, is completely covered using a double-sealing structure in which a covering member for preventing a processing gas from infiltrating into the bonding layer and a sealing member for preventing the bonding layer from being damaged are bonded to each other. The durability and the efficiency of the operation of the electrostatic chuck device are improved.

Abstract: Aspects of the present disclosure provide a wafer processing device for optimizing wafer shape. For example, the wafer processing device can include a first hot plate, a second hot plate and a controller. The first hot plate can be configured to heat a wafer. For example, the first hot plate can provide uniform heating across a surface of the first hot plate. The second hot plate has multiple heating zones with each heating zone independently controllable such that each heating zone can be set to a temperature value independent of other heating zones. The controller is configured to control the first hot plate to provide the uniform heating, receive a bow measurement from wafer curvature measurement of a wafer, and set the multiple heating zones of the second hot plate to their respective temperature values that correspond to the bow measurement.

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic disc incorporating an electrode and a ceramic cylindrical shaft supporting the disc. The disc and the shaft are integrally formed and mutually have no bonding interface. The disc has a surface with which the shaft is integrated. The surface has a region inside the shaft and a region outside the shaft. The region inside the shaft is recessed by one step with respect to the region outside the shaft and has an electrode exposure hole through which the electrode is exposed.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a first porous part. The ceramic dielectric substrate includes first and second major surfaces. The second major surface is opposite to the first major surface. The base plate supports the ceramic dielectric substrate and includes a gas feed channel. The first porous part is provided in the ceramic dielectric substrate and is opposite to the gas feed channel. The first porous part includes a first porous region, and a first dense region denser than the first porous region. The first porous region includes first sparse portions, and a first dense portion. The first sparse portions include pores. The first dense portion has a higher than the first sparse portions. The first dense portion is positioned between the first sparse portions. The first sparse portions include a first wall part provided between the pores.

Abstract: Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming, during a first duration of time comprising a first time, a top clamp comprising a first set of electrodes and a plurality of burls. The method can further include forming, during a second duration of time comprising a second time that overlaps the first time, a core comprising a plurality of fluid channels configured to carry a thermally conditioned fluid. The method can further include forming, during a third duration of time comprising a third time that overlaps the first time and the second time, a bottom clamp comprising a second set of electrodes. In some aspects, the example method can include manufacturing the electrostatic clamp without an anodic bond.

Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein; a conductive substrate disposed adjacent to a lower surface of the ceramic substrate, serving also as a plasma generating electrode, and having the same diameter as the ceramic substrate; a support substrate disposed adjacent to a lower surface of the conductive substrate, having a greater diameter than the conductive substrate, and electrically insulated from the conductive substrate; and a mounting flange constituting a part of the support substrate and radially extending out of the conductive substrate.

Abstract: Embodiments herein describe methods, devices, and systems for reducing an electric field at a clamp-reticle interface using an enhanced electrostatic clamp. In particular, the electrostatic clamp includes a clamp body, an electrode layer disposed on a top surface of the clamp body, and a plurality of burls that project from a bottom surface of the clamp body, wherein the electrode layer comprises a plurality of cutouts at predetermined locations that vertically correspond to locations of the plurality of burls at the bottom surface of the clamp body.

Abstract: An installation fixture for needle is used to install needles of an electrostatic chuck, and includes: a positioning tray, detachably disposed on an outer base of the electrostatic chuck, the positioning tray being provided with installation holes, and the installation holes corresponding to installation positions of the needles of the electrostatic chuck; and an installation fixture, detachably installed in the installation hole to adjust the installation depth of the needle.

Abstract: An electroadhesive clutch can be coupled to a textile. The clutch can include a first electrode assembly comprising a first conductive member, and a second electrode assembly comprising a second conductive member overlaying in part the first conductive member. In an example, the clutch includes or uses an elastic encasing within which the first and second electrode assemblies are positioned. The elastic encasing can form a first bond with the first conductive member at a first location of the elastic encasing and a second bond with the second conductive member proximate a second location of the elastic encasing different than the first location.

Abstract: Provided is a substrate supporting apparatus with improved durability. The substrate supporting apparatus includes a body configured to support a substrate and formed of a dielectric substance; a heat transfer medium supply hole installed to penetrate the body; a first electrostatic electrode disposed in the body; and a second electrostatic electrode disposed in the body, located on the first electrostatic electrode, and electrically connected to the first electrostatic electrode.

Abstract: A ceramic substrate includes a substrate main body, and a conductor layer provided inside of the substrate main body. The substrate main body includes an insulator layer that is ceramics composed of aluminum oxide, and a composite oxide layer of aluminum and silicon, the composite oxide layer being formed between the insulator layer and the conductor layer.

Abstract: A heating assembly includes a support member for supporting a target thereon, a diffuser layer attached to the support member, and a heater attached to the diffuser layer. The diffuser layer includes discrete diffuser segments separated by gaps. The discrete diffuser segments are made of the same material and are configured to allow a desired thermal gradient to be maintained between the discrete diffuser segments during heating of the target.

Abstract: An apparatus for securing a wafer includes a chuck, at least one O-ring disposed on the chuck, a vacuum system connected to the chuck, such that the vacuum system comprises a plurality of vacuum holes through the chuck connected to one or more vacuum pumps, and a controller configured to control the height of the at least one O-ring relative to the top surface of the chuck. The controller is connected to pressure sensors capable of detecting a vacuum. The at least one O-ring may include a plurality of O-rings.

Abstract: With respect to a method of reducing leakage of a heat transfer gas, the method includes mounting an edge ring on a main body including an electrostatic chuck; attracting the edge ring to the electrostatic chuck; increasing a temperature of the edge ring; decreasing the temperature of the edge ring; and repeating the increasing of the temperature and the decreasing of the temperature a plurality of times.

Abstract: Apparatuses and systems for pedestals are provided. An example pedestal may have a body with an upper annular seal surface that is planar, perpendicular to a vertical center axis of the body, and has a radial thickness, a lower recess surface offset from the upper annular seal surface, and a plurality of micro-contact areas (MCAs) protruding from the lower recess surface, each MCA having a top surface offset from the lower recess surface by a second distance less, and one or more electrodes within the body. The upper annular seal surface may be configured to support an outer edge of a semiconductor substrate when the semiconductor substrate is being supported by the pedestal, and the upper annular seal surface and the tops of the MCAs may be configured to support the semiconductor substrate when the semiconductor substrate is being supported by the pedestal.

Abstract: A layer arrangement for an electrostatic chuck comprises a first ceramic layer; a second ceramic layer; a metallised layered disposed between the first and second ceramic layers. The first ceramic layer comprises at least 90.0 wt % alumina, titania, ZrO2, Y2O3, AlN, Si3N4, SiC, transition metal oxides or combinations thereof; and in the range of 0.1 to 10.0 wt % tantalum oxide (Ta2O5).

Abstract: An electrostatic chuck of the disclosure includes a ceramic base in plate form, and an electrostatic attraction electrode. The ceramic base includes a plurality of particles containing aluminum oxide as a main component. The plurality of particles contain magnesium atoms and zirconium atoms.

Abstract: A substrate fixing device includes: a base plate; and an electrostatic chuck that is fixed to the base plate and configured to adsorb a substrate by electrostatic force. The electrostatic chuck includes: a ceramic layer that is formed of a ceramic and that is configured to adsorb the substrate in a state that the ceramic layer contacts the substrate; a first heater pattern that is disposed on the ceramic layer and configured to generate heat; an insulating resin layer that is disposed on the first heater pattern to cover the first heater pattern; a second heater pattern that is disposed on the insulating resin layer and configured to generate heat; and an electrically conductive member that penetrates the insulating resin layer such that one end of the electrically conductive member contacts a surface of the first heater pattern and the other end of the electrically conductive member contacts a surface of the second heater pattern.

Abstract: Embodiments of the present disclosure generally relate to lift pins and to apparatus for controlling lift pin movement. In an embodiment, an apparatus for positioning a substrate in a chamber is provided. The apparatus includes a chamber component, a lift pin having a top surface for supporting the substrate and a lift pin shaft and a stopper. The apparatus further includes a compressible element positioned between the chamber component and the stopper, the compressible element further positioned around the lift pin shaft, the lift pin being moveable relative to a substrate transfer plane by movement of a substrate support in contact with the compressible element.

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a process kit for processing a substrate is provided. The process kit has a support ring comprising an upper surface having an inner edge disposed at a first height and an outward edge disposed at a second height less than the first height, the inner edge having a greater thickness than the outward edge. An edge ring is disposed on the support ring, an inner surface of the edge ring interfaced with the inner edge of the support ring. A cover ring is disposed outward of the edge ring, the edge ring independently moveable relative to the support ring and the cover ring. Push pins are disposed inward of the cover ring, the push pins operable to elevate the edge ring while constraining radial movement of the support ring.

Abstract: This substrate bonding device (100) includes: a stage (401), a head (402), an electrostatic chuck that holds a peripheral portion of a substrate (301) while the stage (401) supports the substrate (301), a holder driver that drives the electrostatic chuck, and a controller (700). The electrostatic chuck is disposed in a first area on the stage (401) facing the peripheral portion of the substrate (301), and the holder driver drives the electrostatic chuck by applying voltage to the electrostatic chuck. The controller (700) controls the holder driver in such a manner that a peripheral portion of the substrate (301) is released from the electrostatic chuck when a peripheral portion of the substrate (301) is made to come into contact with a peripheral portion of the substrate (302) while a central portion of a bonding surface of the substrate (301) and a central portion of a bonding surface of the substrate (302) are in contact with each other.

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a wafer placement surface and that contains an electrode; a plug insertion hole that is formed as at least a portion of a through-hole extending through the ceramic plate in an up-down direction, an internal thread portion being on an inner circumferential surface around the plug insertion hole; and an insulating plug that includes an external thread portion screwed on the internal thread portion on an outer circumferential surface and that allows gas to pass therethrough.

Abstract: A base plate has one surface and the other surface opposite to the one surface. An electrostatic chuck is capable of being mounted on the one surface. The base plate includes a refrigerant flow path provided therein. An inner wall of the refrigerant flow path has an upper surface convex toward the one surface in a longitudinal sectional view in a direction intersecting with a direction in which refrigerant flows. An unevenness is formed on the upper surface.

Abstract: An apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads.

Abstract: A teaching apparatus includes a chamber; an electrostatic chuck in the chamber, the electrostatic chuck including a sidewall surrounding a loading area; an aligner configured to be loaded onto the loading area of the electrostatic chuck; a vision sensor configured to obtain measurement data by measuring separation distances of separation regions between the aligner and the sidewall of the electrostatic chuck and to transmit the measurement data; a transfer robot configured to load the aligner onto a reference position of the loading area and to position the vision sensor above the electrostatic chuck; and controller configured to reset the reference position and to equalize the separation distances based on the measurement data transmitted from the vision sensor.

Abstract: A heating device includes a heater electrode disposed in the inner portion of a plate-like body and including a heater line portion; and a plurality of specific portions arranged side by side in a predetermined arrangement direction. The heater line portion includes a first heater line portion and a second heater line portion arranged in a location closer than the first heater line portion to the specific portions. The second heater line portion has a projecting line part passing through a first virtual straight line and curving toward a side of the first heater line portion; and a recessed line part extending to avoid a second virtual straight line and curving toward a side opposite to the side of the first heater line portion.

Abstract: Electrostatic chucks and methods of using electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a heating element embedded within the ceramic body, and two or more temperature measurement devices embedded within the ceramic body. Exemplary methods include measuring temperatures within the electrostatic chuck using two or more vertically spaced-apart temperature measurement devices.

Abstract: The present invention relates to an electrostatic chuck heater and a manufacturing method therefor and, more particularly, to an electrostatic chuck heater comprising: a ground electrode; and an electrostatic chuck electrode spaced a predetermined distance apart from the outside of the ground electrode, wherein the heater can reduce the phenomenon of rising of a wafer edge and thus can significantly reduce the temperature deviation according to positions on a heating surface of an object, such as a wafer, so as to increase the temperature uniformity of the heating surface.

Abstract: Embodiments disclosed herein include an apparatus for measuring chucking force and methods of using such apparatuses. In an embodiment, the apparatus for measuring a chucking force comprises a substrate having a chucking surface, where the chucking surface is the surface that is supported by a chuck. In an embodiment, the apparatus further comprises a plurality of sensors over the chucking surface, where the plurality of sensors are thin film sensors with a thickness that is less than a thickness of the substrate. In an embodiment, the apparatus further comprises a wireless communication module electrically coupled to each of the plurality of sensors.

Abstract: A plasma processing apparatus includes a mounting stage including a mounting surface, on which an object to be processed is mounted, a back surface provided on a side opposite to the mounting surface, a plate-like member, in which a first hole penetrating through the mounting surface and the back surface is formed, and a base having a supporting surface for supporting the plate-like member and having a second hole communicating with the first hole; and an embedment member disposed inside the first and second holes, the first embedment member being disposed inside the first hole, the second embedment member being disposed inside the second hole, wherein the first embedment member and the second embedment member are not mutually fixed, and the first embedment member has a portion having a wider width than a width of an upper end portion on a lower side than the upper end portion.

Abstract: A substrate lifting apparatus LM according to this invention is built into a stage ST having, on an upper surface, an electrostatic chuck EC for attracting a to-be-processed substrate W hands over the to-be-processed substrate to and from the stage has: lifting pins which are moveable upward and downward between a hidden position in which the lifting pins lie hidden into the stage, and a protruded position protruding upward from the upper surface of the stage; and a driving means for moving the lifting pins upward and downward. The driving means is arranged to be able to stop the upward movement of the lifting pins in an intermediate position in the course of moving the lifting pins upward from the hidden position to the protruded position.

Abstract: A bonding device has two chucks, two gas pressure regulators and a control unit. The chucks each have a holding surface with pressure ports fluidically connected to the respective gas pressure regulator. The control unit is electrically and/or wirelessly connected to the gas pressure regulators and configured to control gas pressure regulators independently from each other. Support elements movably mounted within the pressure ports, are provided to measure the amount of substrate deflection and adjust the respective gas pressures and also to apply additional mechanical pressure to the substrates. The two chucks may be mounted on corresponding support structures so as to be thermally isolated therefrom. The temperature of the two chucks may be equalised by moving the chucks into contact. A chuck tempering device may be used for equalising the temperature of the two chucks. The bonding device is used for bonding two substrates by bonding wave propagation.