Abstract: An ultracapacitor that includes an energy storage cell immersed in an advanced electrolyte system and disposed within a hermetically sealed housing, the cell electrically coupled to a positive contact and a negative contact, wherein the ultracapacitor is configured to output electrical energy within a temperature range between about ?40 degrees Celsius to about 210 degrees Celsius. Methods of fabrication and use are provided.

Abstract: The present invention provides techniques to more accurately control the process performance of treatments in which microelectronic substrates are treated by pressurized fluids that are sprayed onto the substrates in a vacuum process chamber. control strategies are used that adjust mass flow rate responsive to pressure readings in order to hold the pressure of a pressurized feed constant. In these embodiments, the mass flow rate will tend to vary in order to maintain pressure uniformity.

Abstract: Disclosed is a stage including: an electrostatic chuck having a substrate placement surface on which a substrate is placed; and an electrostatic chuck placement plate on which the electrostatic chuck is placed. The electrostatic chuck and the electrostatic chuck placement plate are fastened by a plurality of first fasteners from a side of the electrostatic chuck placement plate, and the stage is fastened to a support provided on an opposite side of the electrostatic chuck of the electrostatic chuck placement plate by a plurality of second fasteners on a radially outer side of the placement surface.

Abstract: Systems and methods are provided for detecting and analyzing changes in a body. A system includes an electric field generator, an external sensor device, a quadrature demodulator, and a controller. The electric field generator is configured to generate an electric field that associates with a body. The external sensor device sends information to the electric field generator and is configured to detect a physical change in the body in the electric field, where the physical change causes a frequency change of the electric field. The quadrature demodulator receives the electric field from the electric field generator and is configured to detect the frequency change of the electric field and to produce a detected response. The controller, coupled to the electric field generator, is configured to output a frequency control signal to the electric field generator and to modify the frequency of the electric field by adjusting the frequency control signal.

Abstract: Provided is a thermally conductive composite silicone rubber sheet formed by laminating an acrylic pressure-sensitive adhesive layer on one side of a non-pressure-sensitive adhesive/high-hardness thermally conductive silicone rubber sheet, wherein the acrylic pressure-sensitive adhesive layer is a cured product of an acrylic pressure-sensitive adhesive composition containing: an acrylic pressure-sensitive adhesive made of a polymer of a monomer mixture in which 5-50 mol % of hydroxyl group-containing monomers are contained in all of the constituent monomers; and 0.05-5 parts by mass of a chelate-based curing agent with respect to 100 parts by mass of the acrylic pressure-sensitive adhesive, and the thermally conductive silicone rubber sheet has a thermally conductive silicone rubber layer which, as a cured product of a thermally conductive silicone composition containing a thermally conductive filler, has a durometer A hardness of 60-96.

Abstract: Embodiments of the present disclosure generally relate to substrate support assemblies for retaining a surface of a substrate having one or more devices disposed on the surface without contacting the one or more devices and deforming the substrate, and a system having the same. In one embodiment, the substrate support assembly includes an edge ring coupled to a body of the substrate support assembly. A controller is coupled to actuated mechanisms of a plurality of pixels coupled to the body of the substrate support assembly such that portions of pixels corresponding to a portion of the surface of a substrate to be retained are positioned to support the portion without contacting one or more devices disposed on the surface of the substrate to be retained on the support surface.

Abstract: An electrostatic chuck includes a metal base plate, an electrostatic puck bonded to the metal base plate, and surface features on the surface of the electrostatic puck. The electrostatic puck includes an electrode embedded in the electrostatic puck. A surface of the electrostatic puck has a flatness of below 10 microns. The surface features include mesas and a sealing band around a perimeter of the electrostatic puck. The surface features have an average surface roughness of approximately 2-6 micro-inches. The corners of the surface features are not rounded.

Abstract: A sample holder includes an insulating substrate including a ceramic material and having a sample holding surface on one main surface thereof, a heat-generating resistor located on another main surface of the insulating substrate, a metal member facing the another main surface, and an adhesive layer covering the another main surface, the adhesive layer including a first layer which is in contact with the insulating substrate, and a second layer which is in contact with the metal member and having an elastic modulus that is smaller than an elastic modulus of the first layer, the second layer including a layered portion positioned between the first layer and the metal member, and an annular portion surrounding the first layer.

Abstract: Methods and apparatus for dechucking a wafer from a surface of an electrostatic chuck (ESC). In some embodiments, a method comprises reducing a pressure of a gas applied to a backside of the wafer to approximately zero psi; reducing a downward pressure in a cylinder bore of a lifting actuator to approximately atmospheric pressure while a processing volume of the processing chamber is in a vacuum state to create a constant upward force on the wafer, the constant upward force less than a breaking force of the wafer; and sweeping a voltage applied to the ESC to dechuck the wafer; and monitoring a sensor on the lifting actuator that is interposed between a chucking position of the lifting actuator and a transfer position of the lifting actuator to detect when the wafer is dechucked.

Abstract: A substrate fixing device includes a baseplate, an adhesive layer on the baseplate, and an electrostatic chuck on the adhesive layer. The adhesive layer includes a first layer and a second layer. The second layer is between the first layer and the electrostatic chuck. The thermal conductivity of the first layer is higher in a stacking direction in which the baseplate, the adhesive layer, and the electrostatic chuck are stacked than in a plane direction perpendicular to the stacking direction. The thermal conductivity of the second layer is higher in the plane direction than in the stacking direction.

Abstract: An apparatus for adsorbing a mask includes an adsorbing member and a controller connected to the adsorbing member. The adsorbing member is configured to adsorb the mask during evaporation and is capable of simultaneously producing different or a same adsorption force to different regions of the mask. The controller is configured to control the adsorbing member to start adsorption from at least one initial adsorption region of the mask, and then control the adsorbing member to gradually expand an adsorption range from the at least one initial adsorption region until the mask is entirely attached to a base substrate.

Abstract: A substrate support is disclosed. The substrate support has a dielectric body with a plurality of features formed thereon. A ledge surrounds the plurality of features about a periphery thereof. The features increase in number from a central region of the substrate support towards the ledge. A seasoning layer is optionally disposed on the dielectric body.

Abstract: Embodiments of improved substrate carriers are provided herein. In some embodiments, a substrate carrier, includes: a multi-layered disk having upper and lower layers formed of a continuous material and an electrostatic electrode structure disposed therebetween, wherein the multi-layered disk is dimensioned and arranged so as to have a nominal dimension which exceeds a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices, and wherein the multi-layered disk is formed symmetrically about a central axis and defines a substantially planar upper surface.

Abstract: A method of transferring semiconductor chips includes providing a transfer tool having a plurality of segments, each segment having a liquid receiving area; providing a plurality of semiconductor chips in a regular array on a source carrier; providing a target carrier; selectively arranging liquid drops on the liquid receiving areas of some of the segments; causing the transfer tool to approach the source carrier, each liquid drop contacting and wetting a semiconductor chip; lifting the transfer tool from the source carrier, wherein semiconductor chips wetted by liquid drops are lifted from the source carrier by the transfer tool; causing the target carrier by the transfer tool, to approach the semiconductor chips arranged on the transfer tool contacting the target carrier; and lifting the transfer tool from the target carrier, the semiconductor chips contacting the target carrier remaining on the target carrier

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

Abstract: An electrostatic chuck device includes: a base having one principal surface which is a placing surface on which a plate-shaped sample is placed, wherein the base is made from a sintered compact of ceramic particles, which include silicon carbide particles and aluminum oxide particles, as a forming material; and an electrostatic attraction electrode which is provided on a surface of the base on the side opposite to the placing surface of the base, or in the interior of the base, in which the volume resistivity value of the sintered compact is 0.5×1015 ?cm or more in the entire range from 24° C. to 300° C., a graph which shows the relationship of the volume resistivity value of the sintered compact to a temperature at which the volume resistivity value of the sintered compact is measured has a maximum value in the range from 24° C. to 300° C., and the amount of metal impurities in the sintered compact other than aluminum and silicon in the sintered compact is 100 ppm or less.

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

Abstract: A substrate heating apparatus includes: a substrate support configured to substantially horizontally support a substrate; a heater provided below the substrate support substantially parallel to the substrate, and having a predetermined planar shape; and a side portion extending downward from an outer peripheral portion of the heater.

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a thermally managed material embedded in the thermally conductive base at the upper surface of the thermally conductive base in one or more of the plurality of thermal zones. The thermally managed material has different thermal conductive properties along a first direction and a second direction. The thermally conductive base further includes a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base between two or more of the plurality of thermal zones without contacting the lower surface of the thermally conductive base. Each of the plurality of thermal isolators provides a degree of thermal isolation.

Abstract: A semiconductor chuck is provided. The semiconductor chuck includes a metal base and a first adhesive layer over the metal base. The semiconductor chuck includes a dielectric layer over the first adhesive layer, wherein the dielectric layer is adhered to the metal base by the first adhesive layer. The semiconductor chuck includes a removable protective plate over the dielectric layer, wherein a first portion of the removable protective plate covers a top surface of the dielectric layer.

Abstract: A platen having improved thermal conductivity and reduced friction is disclosed. In one embodiment, vertically aligned carbon nanotubes are grown on the top surface of the platen. The carbon nanotubes have excellent thermal conductivity, thus improving the transfer of heat between the platen and the workpiece. Furthermore, the friction between the carbon nanotubes and the workpiece is much lower than that with conventional embossments, reducing particle generation. In another embodiment, a support plate is disposed on the platen, wherein the carbon nanotubes are disposed on the top surface of the support plate.

Abstract: Apparatus and method for monitoring wafer charges are proposed. A conductive pin, a conductive spring and a conductive line are configured in series to connect the backside surface of the wafer and the sample conductor so that the backside surface of the wafer and the surface of the sample conductor have identical charge density. Hence, by using a static electricity sensor positioned close to the surface of the sample conductor, the charges on the wafer may be monitored. Note that the charges appeared on the frontside surface of the wafer induces charges on the backside surface of the wafer. The sample conductor is a sheet conductor and properly insulated from the surrounding environment. As usual, the sample conductor and the static electricity sensor are positioned outside the chamber where the wafer is placed and processed, so as to simplify the apparatus inside the chamber and reduce the contamination risk.

Abstract: A method for manufacturing a semiconductor device and a mounting apparatus are provided. The method for manufacturing a semiconductor device includes: a placing step for placing, on a bonding surface, a temporary substrate which is transmissive with respect to an alignment mark; an image acquisition step for acquiring an image of the alignment mark and an image of a semiconductor die; a correction step for correcting, on the basis of the image of the alignment mark and the image of the semiconductor die acquired in the image acquisition step, the position in the horizontal direction of a bonding head that pressure bonds the semiconductor die to the temporary substrate; and a pressure bonding step for pressure bonding the semiconductor die to the transmissive substrate on the basis of the corrected position in the horizontal direction.

Abstract: A dechuck control method of dechucking a processed object electrostatically attracted to an electrostatic chuck is provided. The method includes a step of dechucking the processed object by lifting the processed object with a supporting mechanism. The dechucking step is performed while applying a given voltage to an electrode of the electrostatic chuck.

Abstract: Described herein is a substrate carrier comprising electrostatic chuck panels and using the same. The electrostatic chuck panels may include electrodes with interleaved segments. Further, the electrodes of each electrostatic chuck panel may be driven with chucking voltages having opposite polarities.

Abstract: According to the embodiment, the electrostatic chuck includes a ceramic dielectric substrate having a first major surface and a second major surface on an opposite side to the first major surface, a base plate supporting the ceramic dielectric substrate and including a gas introduction path, and a first porous part provided at a position between the base plate and the first major surface and being opposite to the gas introduction path. The ceramic dielectric substrate includes a first hole part positioned between the first major surface and the first porous part. At least one of the ceramic dielectric substrate or the first porous part includes a second hole part positioned between the first hole part and the first porous part, and a dimension of the second hole part is smaller than a dimension of the first porous part and larger than a dimension of the first hole part.

Abstract: An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask. The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force. The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted. When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

Abstract: In an embodiment, a system includes: a chuck; multiple groove conduits arranged around a circumference of a wafer position on the chuck; a gas source in fluid communication with the multiple groove conduits; and a flow monitor configured to determine an amount of gas flow from the gas source to an individual one of the multiple groove conduits.

Abstract: An electrostatic chuck assembly includes an electrostatic chuck including a circular-shaped electrostatic dielectric layer on which a wafer is mounted and an adsorption electrode in the electrostatic dielectric layer, and a control part configured to control the electrostatic chuck, wherein the adsorption electrode comprises a plurality of sub-adsorption electrodes separated from each other in an X direction and a Y direction perpendicular to the X direction on a plane level from a central portion of the electrostatic dielectric layer.

Abstract: Systems, apparatus, and methods of manufacturing an article using electroadhesion technology, either as a sole modality of handling such materials or in concert with at least one mechanically actuated modality for the pick-up and release of materials, respectively. The mechanically actuated modality in one embodiment is configured as a netting configured to be placed over a contact surface of an electroadhesive plate to facilitate the handling of an object.

Abstract: An extreme ultraviolet (EUV) lithography system includes an extreme ultraviolet (EUV) radiation source to emit EUV radiation, a collector for collecting the EUV radiation and focusing the EUV radiation, a reticle stage for supporting a reticle including a pellicle for exposure to the EUV radiation, and at least one sensor configured to detect particles generated due to breakage of the pellicle.

Abstract: A method includes transferring a wafer to a position over a wafer chuck; lifting a lifting pin through the wafer chuck to the wafer; introducing a gas to a region between the wafer and the wafer chuck through a plurality of first openings on a sidewall of the lifting pin; and lowering the lifting pin until the wafer reaches the wafer chuck.

Abstract: A transfer apparatus using an electrostatic attraction includes an electrostatic chuck for attracting and placing a workpiece as a transfer member on a placement surface by electrostatic attraction. The electrostatic chuck is grounded by an earth via a ground electrode after the electrostatic chuck receives electric power from a power supply surface of a power source via power receiving electrodes of the electrostatic chuck, so that the electrostatic chuck is configured to attract and place the workpiece on the placement surface by electrostatic attraction in a state where electrostatic balance is broken.

Abstract: The present invention relates to a display device and, more particularly, to a transfer head for a semiconductor light-emitting device applied to the display device and a method for transferring a semiconductor light-emitting device. The transfer head for a semiconductor light-emitting device, according to the present invention, comprises: a base substrate; and an electrode unit disposed on the base substrate to generate an electrostatic force by charging an un-doped semiconductor layer of the semiconductor light-emitting device with electric charges, wherein the base substrate and the electrode unit are formed of light-transmitting materials so that at least a part of the semiconductor light-emitting device is viewable through the base substrate and the electrode unit in sequence.

Abstract: Embodiments of the present disclosure provide an improved electrostatic chuck for supporting a substrate. The electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, a plurality of tabs projecting from the substrate supporting surface of the chuck body, wherein the tabs are disposed around the circumference of the chuck body, an electrode embedded within the chuck body, the electrode extending radially from a center of the chuck body to a region beyond the plurality of tabs, and an RF power source coupled to the electrode through a first electrical connection.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a first electrode layer. The ceramic dielectric substrate has first and second major surfaces. The first electrode layer is provided inside the ceramic dielectric substrate. The first electrode layer is connected to a high frequency power supply. The first electrode layer has a first surface at the first major surface side and a second surface at a side opposite to the first surface. The first electrode layer includes a first portion including the first surface. The first electrode layer includes a ceramic component and a metal component. A concentration of the metal component in the first portion is higher than an average concentration of the metal component in the first electrode layer.

Abstract: An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in plan view of the contact side the cooling element covers one or both contact elements partially.

Abstract: A susceptor for receiving a substrate, the susceptor including a ceramics base member, a conductive layer formed on a top surface of the ceramics base member and a side surface of the ceramics base member, the top surface of the ceramics base member configured to receive and support the substrate, and a conducting member contacting the conductive layer at an outer surface of the ceramics base member.

Abstract: A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. The lifter pin is at least partially formed of an insulating member and has a leading end accommodated in the through hole. The lifter pin vertically moves with respect to the mounting surface to vertically transfer the target object. A conductive material is provided at at least one of a leading end portion of the lifter pin which corresponds to the through hole and a wall surface of the through hole which faces the lifter pin.

Abstract: A transfer device including a first electrode set, a second electrode set, a shielding element, a driving circuit and an elastomer is provided. The first electrode set includes a first electrode configured to receive a first voltage and a second electrode configured to receive a second voltage and structurally separated from the first electrode, wherein a voltage difference exists between the first voltage and the second voltage. The second electrode set disposed adjacent to the first electrode set includes a third electrode configured to receive a third voltage and a fourth electrode configured to receive a fourth voltage and structurally separated from the third electrode, wherein a voltage difference exists between the third voltage and the fourth voltage. The shielding element is disposed on a substrate and located between the first electrode set and the second electrode set. The driving circuit is electrically connected to the first electrode set and the second electrode set.

Abstract: A charged-particle beam device wherein suppressing the effects of static build-up is compatible with executing high-throughput measurements and examination. The charged-particle beam device equipped with an electrostatic chuck (803), includes an electrometer (11) for measuring the electric potential of the electrostatic chuck, a charge removing device (805) for removing charge from the electrostatic chuck, and a control device (806) for controlling the charge removing device in such a manner that the charge removal by the charge removing device is executed after reaching a certain number of processed samples irradiated by the charged particle beam, or after a predetermined processing time. When the result of the electric potential measurement by the electrometer does not meet a predetermined condition, the control device executes at least one among increasing and decreasing the number processed or the processing time.

Abstract: The present invention provides a method for manufacturing a ceramic electrostatic chuck which enables high purity and minimum thickness variation of a dielectric layer formed of ceramics or composite ceramics. The method includes: forming grooves for electrode pattern formation in a dielectric layer formed of ceramics or composite ceramics and having a density of 95% or greater; forming an electrode pattern by filling the grooves with a metal; forming an activated bonding layer configured for joining on the dielectric layer; and joining an insulator layer, which is formed of ceramics or composite ceramics and has a density of 95% or greater, with the dielectric layer.

Abstract: An electrostatic puck assembly includes an upper puck plate, a lower puck plate and a backing plate. The upper puck plate comprises AlN or Al2O3 and has a first coefficient of thermal expansion. The lower puck plate comprises a material having a second coefficient of thermal expansion that approximately matches the first coefficient of thermal expansion and is bonded to the upper puck plate by a first metal bond. The backing plate comprises AlN or Al2O3 and is bonded to the lower puck plate by a second metal bond.

Abstract: A cleaning wafer or substrate for use in cleaning, or in combination with, components of, for example, integrated chip manufacturing apparatus. The cleaning substrate can include a substrate having varying predetermined surface features, such as one or more predetermined adhesive, non-tacky, electrostatic, projection, depression, or other physical sections. The predetermined features can provide for more effective cleaning of the components with which they are used, such as an integrated chip manufacturing apparatus in the place of the integrated chip wafer. The cleaning substrate can be urged into cleaning or other position by vacuum, mechanical, electrostatic, or other forces. The cleaning substrate can adapted to accomplish a variety of functions, including abrading or polishing. The cleaning substrate may be made by a novel method of making, and it may then be used in a novel method of use I combination with chip manufacturing apparatus.

Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.

Abstract: An electrostatic chuck is provided and has a holding surface for holding a wafer with a tape attached to one side of the wafer where the tape is in contact with the holding surface. The electrostatic chuck includes a disk-shaped member having a plurality of fine holes communicating with a vacuum source, where the fine holes are exposed to the holding surface. The disk-shaped member also includes a plurality of asperities formed on the holding surface and connected to the fine holes, and an electrode embedded in the disk-shaped member. The vacuum source is operated to produce a vacuum on the holding surface through the fine holes and thereby hold the wafer through the tape on the holding surface under suction, where the asperities formed on the holding surface function as a suction passage communicating with the fine holes.

Abstract: A substrate support assembly for use in an electrostatic chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating thermal conductance gas light-up. In one embodiment, the substrate support assembly includes a dielectric block having an upper surface for interfacing with a substrate support surface and a lower surface configured for interfacing with a baseplate. The assembly further includes a plurality of plug channels for introducing gas through the dielectric block to a temperature conduction region between the substrate support surface and a lower surface of the substrate. Each of plug channels contains a ceramic foam plug having a body and a pre-formed pore matrix that is integrally distributed through the body for reducing the mean free path of the gas.

Abstract: A freeze cleaning apparatus includes a table for supporting a processing target substrate having a first surface and a second surface opposite to the first surface, a liquid supply unit positioned to supply a cleaning liquid onto the second surface of the processing target substrate that is placed such that the first surface faces the table, and a cooling gas discharge unit in the table to supply a cooling gas to the first surface side of the processing target substrate. A gap between the table and the processing target substrate is set such that the cooling gas flows as a laminar flow between the table and the processing target substrate.

Abstract: A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.

Abstract: The present disclosure generally relates to an electrostatic chuck for processing substrates. The electrostatic chuck includes a facilities plate and an insulator disposed between a cooling base and a ground plate. A support body is coupled to the cooling base for supporting a substrate thereon. A ring is configured to surround the insulator. The ring is formed from a material that is resistant to degradation from exposure to a manufacturing process. The ring optionally includes an extension configured to surround the facilities plate.