Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. Trenches are formed in the thermally conductive base approximately concentric around a center of the thermally conductive base. The trenches extend from the upper surface towards a lower surface of the thermally conductive base without contacting the lower surface of the thermally conductive base. The thermally conductive base includes thermal zones. The substrate support assembly further includes a thermally insulating material disposed in the trenches. The thermally insulating material in a trench of the trenches provides a degree of thermal isolation between two of the thermal zones separated by the trench at the upper surface of the thermally conductive base.

Abstract: The invention relates to an apparatus for electrostatic coupling of a substrate with a substrate carrier, wherein the apparatus includes a flexible plastic carrier film on which an electrically contactable electrode structure is unilaterally deposited, and a cover layer which can be brought into contact with the electrode structure on the side of the electrode structure facing away from the carrier film, wherein the apparatus is configured such that, in a coupled state, the same is arranged at least in sections between the substrate and the substrate carrier and, in a non-coupled state, the same can be removed from the substrate carrier in a reusable manner.

Abstract: An electrostatic chuck device includes an electrostatic chuck member and a temperature controlling base member. The electrostatic chuck member has a ceramic plate having a mounting surface on which a plate-shaped sample is mounted, and an electrode for electrostatic attraction provided on the other surface on the side opposite the mounting surface of the ceramic plate. The temperature controlling base member is disposed on the surface on the side opposite the ceramic plate side of the electrode for electrostatic attraction and cools the electrostatic chuck member. The ceramic plate has a dike portion which extends to the temperature controlling base member side and surrounds the electrode for electrostatic attraction, the temperature controlling base member has a groove portion accommodating an end part of the dike portion, and a space between the groove portion and the dike portion is filled with a filling part formed of a resin material.

Abstract: A process for sorting materials using material-selective electroadhesive grippers is disclosed. At least one of an electroadhesive surface or a plurality of articles is manipulated such that multiple ones of the plurality of articles are at least intermittently proximate the electroadhesive surface. Voltage is applied to one or more electrodes in the electroadhesive surface to thereby cause the electroadhesive surface to selectively adhere to a subset of the plurality of articles based on the subset of the plurality of articles having different material properties than others of the plurality of articles. While the voltage is applied, the electroadhesive surface is moved with respect to the others of the plurality of articles to thereby separate the subset of the plurality of articles from the others of the plurality of articles.

Abstract: A lithography apparatus transfers a pattern of an original to a substrate. The apparatus includes an electrode structure arranged so as to surround a side surface of one of the substrate and the original, and a power supply configured to supply an alternating voltage to the electrode structure. The electrode structure includes a plurality of electrode groups electrically insulated from each other, each electrode group including a plurality of electrodes electrically connected to each other, and the power supply supplies alternating voltages having different phases to the plurality of electrode groups.

Abstract: A substrate processing apparatus includes an electrostatic chuck which is made up of a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a first heater section in the dielectric plate between the chuck electrode and the base. The first heater section includes first heaters that are separated from each other in a first direction, and respective first upper plate electrodes disposed between the first heaters and the base. The first upper plate electrodes are separated from each other in the first direction and respectively connected to the first heaters.

Abstract: Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.

Abstract: Systems and methods for statistical data decimation are described. The method includes receiving a variable from a radio frequency (RF) system, propagating the variable through a model of the RF system, and counting an output of the model for the variable to generate a count. The method further includes determining whether the count meets a count threshold, generating a statistical value of the variable at the output of the model upon determining that the count meets the count threshold, and sending the statistical value to the RF system to adjust the variable.

Abstract: Provided are a work heating device which is capable of heating a work piece with high soaking properties as well as fine temperature control and which remains highly reliable over a long-term use by preventing the deformation or the like of a chuck member, and a work treating device that uses the work heating device. The work heating device is a work heating device in which the chuck member including a work attraction electrode for work attraction and a heater member including a heating element for work heating are layered, and which is capable of heating with the heater member the work piece stuck by attraction on the chuck member side, in which the heater member includes a chuck attraction electrode for causing the chuck member to stick by attraction, between a surface of the heater member that is opposed to the chuck member and the heating element, so that the chuck member and the heater member are layered detachably.

Abstract: Systems and methods for aligning a transfer head assembly with a substrate are disclosed. In an embodiment a pivot mount is used for generating a feedback signal in a closed-loop motion control system. In an embodiment, the pivot mount includes a plurality of spring arms, with each spring arm including a switch-back along an axial length of the spring arm such that a pair of first and second lengths of the spring arm are immediately adjacent the switch-back and are parallel to each other. A first strain sensing element is located at the first length, and a second strain sensing element is located at the second length.

Abstract: A substrate carrier system is provided. The substrate carrier system includes a substrate carrier body, an electrode assembly, a support base, and a controller. The substrate carrier body has a substrate supporting surface, and an electrode assembly is disposed in the substrate carrier body. The electrode assembly includes a plurality of laterally spaced apart electrode sets. Each electrode set includes a first electrode interleaved with a second electrode. The support base supports the substrate carrier body. The controller is configured to: select a first group of the electrode sets and a second group of the electrode sets from the plurality of the electrode sets; operate the first group of the electrode sets in a first chucking mode; simultaneously operate the second group of the electrode sets in a second chucking mode; and selectively switch at least one electrode set from the first group to the second group.

Abstract: The invention relates to a tester apparatus of the kind including a portable supporting structure for removably holding and testing a substrate carrying a microelectronic circuit. An interface on the stationary structure is connected to the first interface when the portable structure is held by the stationary structure and is disconnected from the first interface when the portable supporting structure is removed from the stationary structure. An electrical tester is connected through the interfaces so that signals may be transmitted between the electrical tester and the microelectronic circuit to test the microelectronic circuit.

Abstract: An imprint apparatus for transferring a pattern to an imprint material using a mold includes a substrate holding mechanism and a control unit. The substrate holding mechanism is configured to be divided into a plurality of areas, capable of varying an attracting force for attracting the substrate in each of the areas and to hold the substrate. The control unit is configured to, when a plurality of shots is formed on the substrate, control an imprint operation of transferring the pattern to the plurality of shots which are not adjacent to one another, makes the attracting force in the area of the substrate holding mechanism corresponding to the shot to which the pattern is transferred among the plurality of areas smaller than the attracting force at the time of the imprint operation and suck the substrate.

Abstract: An alumina sintered body according to the present invention has a degree of c-plane orientation of 90% or more as determined by Lotgering's method from an X-ray diffraction profile obtained by irradiating a plate surface with X-rays in a range of 2?=20° to 70°. The alumina sintered body has no pores when a cross-sectional surface formed in a direction perpendicular to the plate surface is polished using an Ar+ ion beam and a mask and is examined under a scanning electron microscope at a magnification of 5,000 times. The alumina sintered body has a total mass fraction of impurity elements other than Mg and C of 100 ppm or less. This alumina sintered body has a high degree of orientation, high density, and high purity and thus has a higher optical translucency than those known in the art.

Abstract: In various aspects of the disclosure, a semiconductor substrate processing system may include an electrostatic chuck for holding a semiconductor substrate attached to an electrically insulating carrier; and an AC power supply electrically coupled to the electrostatic chuck.

Abstract: Embodiments disclosed herein generally relate to a substrate carrier system suitable for clamping a substrate and optionally a mask, the substrate carrier system having a stack of removable protective layers. In one embodiment, substrate carrier system is provide that includes a substrate carrier body having a protective layer stack disposed an outer mounting surface of the substrate carrier body. The substrate carrier body is configured to be transported into and out of a processing chamber. The protective layer stack has a plurality of removable protective layers which can be removed as needed to expose a “new” surface for chucking a substrate thereon.

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Abstract: The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.

Abstract: A polycrystalline CaF2 member includes a combined assembly of a plurality of polycrystalline bodies made from CaF2 that are pressure bonded together.

Abstract: A method of manufacturing an electrostatic chuck includes providing a dielectric substrate having a surface which is constituted by a bottom face, and a plurality of projecting portions protruding from the bottom face, the plurality of projecting portions including top faces to come in contact with the processing target object, and side faces extending from the bottom face to the top faces, respectively; and forming a protective film made of yttrium oxide on the side faces of the plurality of projecting portions and the bottom face such that the top faces are exposed.

Abstract: A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

Abstract: Substrate support assemblies for a semiconductor processing apparatus are described. The assemblies may include a pedestal and a stem coupled with the pedestal. The pedestal may be configured to provide multiple regions having independently controlled temperatures. Each region may include a fluid channel to provide a substantially uniform temperature control within the region, by circulating a temperature controlled fluid that is received from and delivered to internal channels in the stem. The fluid channels may include multiple portions configured in a parallel-reverse flow arrangement. The pedestal may also include fluid purge channels that may be configured to provide thermal isolation between the regions of the pedestal.

Abstract: A manufacturing method of a display device includes locating a base member on a support substrate; and removing a part of the support substrate by preventing a first surface portion having a predetermined region in a border plane between the support substrate and the base member from being irradiated with laser light through the support substrate, whereas irradiating a second surface portion, other than the predetermined region, in the border plane between the support substrate and the base member with the laser light through the support substrate.

Abstract: Sample loading device and electrostatic levitation apparatus. The electrostatic levitation apparatus includes a sample storage part including a rod-shaped sample standby part having an external diameter of a first diameter and a rod-shaped sample loading part having an external diameter of a second diameter and a sample cover part covering the sample standby part. The sample storage part has a loading bar inserting hole formed in its center. The loading bar inserting hole is formed through the sample standby part and is formed successively through a portion of the sample loading part. The sample standby part has sample storage vertical through-holes. The sample loading part has a single sample transfer vertical through-hole. The sample transfer vertical through-hole is formed on a surface where the sample storage vertical through-hole is viewed, penetrates the sample loading part, and is connected to the loading bar inserting hole.

Abstract: An electrostatic chuck includes a base member and an electrostatic chuck substrate. The base member includes a cooling path. The electrostatic chuck substrate is connected to an upper surface of the base member through an adhesive layer so as to attract a substrate to be mounted. The cooling path includes an introduction portion, a discharge portion and a conduit. The cooling medium is introduced from an outside of the base member to the introduction portion. The cooling medium is discharged from the discharge portion. The conduit includes a start end portion communicating with the introduction portion and a final end portion communicating with the discharge portion. The introduction portion is inclined toward a lower surface of the base member and at a predetermined angle with respect to an axis perpendicular to the upper surface. The introduction portion extends from the lower surface toward the start end portion.

Abstract: The present invention discloses a packaging apparatus and a packaging device. The packaging apparatus comprises a mask plate and a control circuit that is electrically connected to the mask plate and is used to control the mask plate such that the mask plate electrostatically adsorbs a first substrate or release the first substrate. In the technical solutions of the present invention, the mask plate is controlled by the control circuit such that the mask plate electrostatically adsorbs or releases the first substrate without the need to use the alignment mechanism of mechanical fixing type to fix the first substrate. By completely adsorbing the first substrate by the mask plate in a way of electrostatic adsorption, the deformation of the first substrate and the generation of bubbles between the first substrate and the second substrate are avoided, the alignment precision is improved, and the slip-off of the first substrate from the mask plate during the process of pressing is avoided.

Abstract: In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer extending at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer extending at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.

Abstract: A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A pulse current pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the pulse current pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.

Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base, wherein each of the plurality of thermal isolators provides approximate thermal isolation between two of the plurality of thermal zones at the upper surface of the thermally conductive base.

Abstract: Embodiments of the present disclosure provide an electrostatic chuck (ESC) having azimuthal temperature control. In one embodiment, the electrostatic chuck includes an insulating base, an encapsulating member disposed on the insulating base, a first plurality of electrodes and a second plurality of electrodes disposed at a first elevation in the encapsulating member, the first plurality of electrodes intervening with the second plurality of electrodes, and a plurality of heating elements disposed at a second elevation in the encapsulating member, the heating elements being arranged in the form of discrete sections.

Abstract: A system for zapping a wafer, the system includes a pulse generator; a sensor; a first conductive interface; a second conductive interface; a controller; wherein the pulse generator is configured to generate zapping pulses; wherein the first conductive interface is configured to provide the zapping pulses to a first location of a backside insulating layer of a wafer; wherein the sensor is configured to monitor a coupling between the first conductive interface and the second conductive interface to provide a monitoring result; wherein the monitoring occurs while the second conductive interface contacts a second location of the backside insulating layer; and wherein the controller is configured to control a generation of the zapping pulses in response to the monitoring result.

Abstract: Inventory handlers can include one or more gripping elements connected with a gripping assembly. The gripping element or elements can be subjected to shear force when in contact with inventory items such that the anisotropically adhesive surface engages an inventory item with an adhesive force. Inventory systems can employ robotic inventory handlers as described to lift and displace inventory items using the adhesive force.

Abstract: A dielectric material includes a composite sintered body in which conductive particles are dispersed in an insulating material, in which a dielectric constant at a frequency of 40 Hz is 10 or higher, and a difference between a maximum dielectric loss value and a minimum dielectric loss value at a frequency of 1 MHz in a surface of the composite sintered body is 0.002 or less.

Abstract: A gripping device is described, and includes a holder including a base and a conformable jamming element having an electroadhesive element on a surface thereof and a controllable voltage source that is electrically connected to the electroadhesive element.

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

Abstract: The present disclosure provides a substrate support structure, a vacuum drying device and a vacuum drying method. The substrate support structure includes a support platform and a plurality of pins in the support platform. The plurality of pins is divided into at least two groups, and the at least two groups of pins are in the support platform in such a manner as to be liftable in the support platform, so that a substrate is supported by the at least two groups of pins alternately.

Abstract: A wafer processing system includes at least one metrology chamber, a process chamber, and a controller. The at least one metrology chamber is configured to measure a thickness of a first layer on a back side of a wafer. The process chamber is configured to perform a treatment on a front side of the wafer. The front side is opposite the back side. The process chamber includes therein a multi-zone chuck. The multi-zone chuck is configured to support the back side of the wafer. The multi-zone chuck has a plurality of zones with controllable clamping forces for securing the wafer to the multi-zone chuck. The controller is coupled to the metrology chamber and the multi-zone chuck. The controller is configured to control the clamping forces in the corresponding zones in accordance with measured values of the thickness of the first layer in the corresponding zones.

Abstract: To control temperature of a sample in plasma processing with high accuracy while securing an electrostatic chucking force 5 without breakdown of an electrostatic chucking film. When radio-frequency power is time modulated, a high-voltage side Vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a 10 first amplitude. A low-voltage side Vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude. Then, an ESC power supply control unit controls output voltages from 15 ESC power supplies based on the first voltage value, the second voltage value and a duty ratio of the time modulation.

Abstract: An electrostatic chuck includes a base plate including a penetration hole, a placing table arranged on the base plate, and including an electrode at a position corresponding to the penetration hole, a first cylindrical insulating component arranged on an upper side inside the penetration hole of the base plate, a second cylindrical insulating component arranged on the first cylindrical insulating component, a third cylindrical insulating component arranged under the first cylindrical insulating component, and having an inner diameter smaller than an inner diameter of the first cylindrical insulating component, a connector arranged in the penetration hole, a cylindrical member included in the connector, and including an elastic body in an inner part, and a power feeding terminal included in the connector, and connected to the elastic body. The power feeding terminal touches the electrode of the placing table.

Abstract: A system and method for clamping a workpiece to an electrostatic clamp (ESC) comprises placing a first workpiece on a surface of the ESC and applying a first set of clamping parameters to the ESC, therein clamping the first workpiece to the surface of the ESC with a first clamping force. A degree of clamping of the workpiece to the ESC is determined and the application of the first set of clamping parameters to the ESC is halted based on a process recipe. A second set of clamping parameters is applied to the ESC after halting the application of the first set of clamping parameters to the ESC, and the workpiece is removed from the surface of the ESC concurrent with the application of the second set of clamping parameters to the ESC when the degree of clamping of the workpiece to the ESC is less than or approximately equal to a threshold clamping value. The second set of clamping parameters to the ESC is further halted after removing the workpiece from the surface of the ESC.

Abstract: A substrate support chuck for use in a substrate processing system is provided herein. In some embodiments, a substrate support for use in a substrate processing chamber may include an electrostatic chuck having a top substrate support surface and a bottom surface, and a cooling ring assembly having a central opening disposed proximate the bottom surface of the electrostatic chuck, the cooling ring assembly including, a cooling section having a top surface thermally coupled to the bottom surface of the electrostatic chuck, the cooling section having a cooling channel formed in a bottom surface of the cooling section, and a cap coupled to a bottom surface of the cooling section and fluidly sealing the cooling channel formed in the cooling section.

Abstract: Embodiments of improved substrate carriers are provided herein. In some embodiments, a substrate carrier, includes: a multi-layered disk having upper and lower layers formed of a continuous material and an electrostatic electrode structure disposed therebetween, wherein the multi-layered disk is dimensioned and arranged so as to have a nominal dimension which exceeds a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices, and wherein the multi-layered disk is formed symmetrically about a central axis and defines a substantially planar upper surface.

Abstract: An electrostatic chuck system includes an electrostatic chuck with a plurality of unit chucks supporting a display substrate, an optical photomask on the display substrate, the optical photomask having a material to be transferred onto the display substrate, a light source on the optical photomask, a gap measuring meter for measuring a gap between the display substrate and the optical photomask, a power source unit for applying power to each of the plurality of unit chucks through variable resistance units respectively connected to the plurality of unit chucks, and a control unit electrically connected to the gap measuring meter, the variable resistance units, and the power source unit, and transmits a signal for adjusting the gap.

Abstract: A tray includes a support base having both a first face on which a clamp object is placed and a second face opposite the first face, an upper electrode embedded in the support base and situated toward the first face, a lower electrode embedded in the support base and situated further toward the second face than the upper electrode is, and one or more interconnect lines configured to provide an electrical connection between the upper electrode and the lower electrode.

Abstract: Systems and methods for statistical data decimation are described. The method includes receiving a variable from a radio frequency (RF) system, propagating the variable through a model of the RF system, and counting an output of the model for the variable to generate a count. The method further includes determining whether the count meets a count threshold, generating a statistical value of the variable at the output of the model upon determining that the count meets the count threshold, and sending the statistical value to the RF system to adjust the variable.

Abstract: An electrostatic chuck is disclosed. In one aspect, the electrostatic chuck includes a top plate, wherein first and second regions adjacent to each other are formed at a surface of the top plate. The electrostatic chuck also includes a first absorption plate positioned at the first region and a second absorption plate positioned at the second region to be separated from the first absorption plate. The first and second absorption plates are configured to support the absorption target.

Abstract: A manufacturing method of a substrate structure including the following steps is provided. A chemical surface treatment is performed on a metal base such that a passivation layer is formed on a surface of the metal base. The metal base is assembled to a substrate. A metal pattern is formed on the substrate, wherein the metal pattern is separated from the metal base. A substrate structure and a metal component are also provided.

Abstract: An attachment member (1) according to an embodiment of the present invention includes: a base (4) composed of a ceramic sintered body, which has an annular part (6) corresponding to a shape of an object (2), a bottom surface (7) located inside the annular part (6), and a plurality of column shaped protruding parts (8) protruding from the bottom surface (7), and is provided with an attachment surface (3) supporting and attaching the object (2) inside the annular part (6) by a plurality of the protruding parts (8); and a film (5) that covers at least a part of the bottom surface (7), exposes top surfaces (11) of the protruding parts (8), and has higher hydrophilicity than the base (4). Accordingly, it is possible to provide the attachment member (1) that is excellent in attachment force for the object (2), and suppresses contamination of the object (2).

Abstract: Embodiments provided herein generally relate to an electrostatic chuck (ESC). The ESC may comprise a reduced number of stress initiation points, such as holes through the ESC, which may improve the mechanical integrity of the ESC. Electrodes disposed within the ESC may be connected to electrical contacts and a power source via conductive leads, which may be coupled or formed along a peripheral edge of the ESC. Thus, the need for holes formed in the ESC may be reduced or eliminated. In addition, gas channels may be formed on a top surface, a bottom surface, or both. The gas channels may reduce or eliminate the need for a gas channel formed through the ESC and may facilitate heat transfer between a substrate support, the ESC, and a substrate coupled to the ESC.

Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.