Abstract: To provide an electrostatic chuck, including: a ceramic dielectric substrate having a first major surface on which an object to be processed is mounted, and a second major surface on a side opposite the first major surface, the ceramic dielectric substrate being a polycrystalline ceramic sintered body; and an electrode layer interposed between the first major surface and the second major surface of the ceramic dielectric substrate, the electrode layer being integrally sintered with the ceramic dielectric substrate, a temperature control plate provided on the second major surface side; and a heater provided between the electrode layer and the temperature control plate, and the first dielectric layer and the second dielectric layer of the ceramic dielectric substrate having an infrared spectral transmittance in terms of a thickness of 1 mm of not less than 20%.

Abstract: A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

Abstract: Methods and apparatus for plasma processing of a substrate to improve process results are proposed. The apparatus pertains to multi-layer segmented electrodes and methods to form and operate such electrodes. The multi-layer segmented electrode includes a first layer comprising a first plurality of electrode segments, whereby electrode segments of the first plurality of electrode segments spatially separated from one another along a first direction. There is also included a second layer comprising a second plurality of electrode segments, whereby the second layer is spatially separated from the first layer along a second direction perpendicular to the first direction and whereby at least two segmented electrodes of the first plurality of electrode segments are individually controllable with respect to one or more electrical parameters.

Abstract: The electrostatic chucking device 1 of the invention includes an electrostatic chucking portion 2 which includes a plate-like body 11, a top surface 11a of which is used as a mounting surface that mounts a plate-like specimen W, an electrostatic adsorption electrode 12 provided in the plate-like body 11 and a power-feeding terminal 13 that applies a direct-current voltage to the electrostatic adsorption electrode 12; and a base portion 31 that supports the electrostatic chucking portion 2, in which the plate-like body 11 is a corrosion-resistant ceramic, a circular insulation member 21 is provided in a circumferential edge portion between the electrostatic chucking portion 2 and the base portion 31, and a heat radiation plate 34 is provided on the top surface 31a of the base portion 31.

Abstract: Embodiments of the invention generally relate to an electrostatic chuck having reduced power loss, and methods and apparatus for reducing power loss in an electrostatic chuck, as well as methods for testing and manufacture thereof. In one embodiment, an electrostatic chuck is provided. The electrostatic chuck includes a conductive base, and a ceramic body disposed on the conductive base, the ceramic body comprising an electrode and one or more heating elements embedded therein, wherein the ceramic body comprises a dissipation factor of about 0.11 to about 0.16 and a capacitance of about 750 picoFarads to about 950 picoFarads between the electrode and the one or more heating elements.

Abstract: A plasma processing apparatus includes: a processing chamber that accommodates a substrate therein; a lower electrode positioned within the processing chamber and serving as a mounting table; an upper electrode positioned to face the lower electrode within the processing chamber; a first high frequency power supply that applies high frequency power for plasma generation of a first frequency to the lower electrode or the upper electrode; a second high frequency power supply that applies high frequency power for ion attraction of a second frequency lower than the first frequency to the lower electrode; at least one bias distribution control electrode positioned at least in a peripheral portion above the lower electrode; and at least one bias distribution control power supply that applies an AC voltage or a square wave voltage of a third frequency lower than the second frequency to the at least one bias distribution control electrode.

Abstract: A ceramic member, in a carrier device, includes: a plurality of ceramic layers that have insulating properties and are integrally sintered; a clamping electrode formed on a first ceramic layer among the plurality of ceramic layers and inside of the plurality of ceramic layers, and configured to attract a dielectric material by electrostatic force; a power feed port configured to receive a supply of electric power to the clamping electrode from outside of the ceramic member; a land formed on a second ceramic layer, which is different from the first ceramic layer among the plurality of ceramic layers, and configured to receive electric power through the power feed port; and a via arranged to pass through at least one of the plurality of ceramic layers and provided as a conductive material to electrically connect the clamping electrode with the land.

Abstract: The intent of this invention is to provide an apparatus for substrate transportation that is to carry the substrate without any mechanical contact when the substrate is required to be transported in various manufacturing processes including semiconductor, display and the like.

Abstract: A plasma processing apparatus is provided which includes a processing chamber disposed in a vacuum container, in a decompressed inside of which plasma is formed, a sample stage disposed in a lower part of the processing chamber, on a top surface of which a sample is mounted, a dielectric film made of a dielectric that forms a mounting surface on which the sample is mounted, and electrodes arranged inside the dielectric film and supplied with power for chucking and holding the sample onto the dielectric film, and when the sample is mounted on the sample stage, the sample is kept mounted on the sample stage until a sample temperature becomes a predetermined temperature or until a predetermined time elapses, and power is then supplied to the electrodes to chuck the sample to the sample stage and then start processing on the sample using the plasma.

Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of a thin film stack forming an electronic component. The thin film stack comprises an (optional) isolation layer, a metal layer forming an electrode, a sensor, a heater, a transistor or a logic device, and a top isolation layer.

Abstract: In a plasma processing method, plasma processing is performed in a state where the object is attracted and held on the electrostatic chuck by applying a first voltage as an application voltage thereto and a thermal conduction gas is supplied to a gap between the electrostatic chuck and the object. The application voltage is decreased while stopping the supply of the thermal conduction gas and exhausting the thermal conduction gas remaining between the electrostatic chuck and the object upon completion of the plasma processing. The object is separated from the electrostatic chuck by setting the application voltage to the electrostatic chuck to zero after the application voltage is decreased.

Abstract: According to one embodiment, an electrostatic chuck comprises a mount plate, a first layer, and a second layer. The first layer includes a heater. The second layer is provided between the mount plate and the first layer. The second layer transmits heat from the heater to the mount plate. The second layer includes a compressive attachment portion. The compressive attachment portion is formed at the outer edge. The face on the mount plate side of the compressive attachment portion is compressed and attached to the mount plate. The face on the first layer side of the compressive attachment portion is compressed and attached to the first layer.

Abstract: An electrostatic chuck apparatus includes a pedestal part including a side surface, an electrostatic chuck including a side surface and provided on the pedestal part, an adhesive part including a side surface and provided between the pedestal part and the electrostatic chuck, the adhesive part containing a resin adhesive agent that adheres the pedestal part and the electrostatic chuck together, a recess part provided in a portion of the side surface of the pedestal part and a portion of the side surface of the electrostatic chuck, the recess part being provided in an area that includes a side surface of the adhesive part, the recess part being provided along an outer periphery of the pedestal part, an outer periphery of the adhesive part, and an outer periphery of the electrostatic chuck, and a focus ring engaged with the recess part and covering the side surface of the adhesive part.

Abstract: A substrate holder is reliably transported in a state of holding a substrate. There is provided a substrate holder for holding a substrate by means of electrostatic force generated by power supplied from an external source. The substrate holder is to be transported in a state of holding the substrate. The substrate holder includes a holder body that is to have the substrate placed thereon, and a connector terminal that is externally exposed through the holder body, where the connector terminal is attachable to and detachable from an external power supply terminal. There is also provided a substrate transport apparatus for transporting a substrate holder holding a substrate by means of electrostatic force generated by power supplied from an external source.

Abstract: An electrostatic chuck, a thin film deposition apparatus including the electrostatic chuck, and a method of manufacturing an organic light emitting display apparatus using the thin film deposition apparatus. The electrostatic chuck includes: a first plate; a first common wire disposed on the first plate and electrically connected to a plus terminal of an electric power source; first electrode patterns electrically connected to the first common wire, separated by a distance from each other, and extending from the first common wire; a second common wire disposed on the first plate and electrically connected to a minus terminal of the electric power source; second electrode patterns electrically connected to the second common wire, separated by a distance from each other, and extending from the second common wire; a first additional wire electrically connected to the first common wire; and a second additional wire electrically connected to the second common wire.

Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.

Abstract: Electrostatic chucks and methods of manufacturing the same are provided herein. In some embodiments, an electrostatic chuck comprises an electrically conductive body having one or more channels formed in an upper surface thereof; a plate positioned within the one or more channels to define one or more plenums between the body and the plate, wherein the surfaces of the plenum are anodized; one or more fluid passages disposed in the plate and fluidly coupling the one or more plenums to the upper surface of the body, wherein the surfaces of the fluid passages are electrically insulated; and a dielectric layer disposed over the upper surface of the body and the plate, wherein the dielectric layer forms a support surface for a substrate to be disposed thereon.

Abstract: An electrostatic chuck device is provided in which it is possible to uniformize an in-plane temperature distribution in a placement surface on which a plate-shaped sample such as a wafer is placed and it is possible to improve in-plane uniformity of plasma etching of the plate-shaped sample by uniformizing plasma density on the plate-shaped sample.

Abstract: A substrate mounting mechanism on which a target substrate is placed is provided. The substrate mounting mechanism includes a heater plate, which has a substrate mounting surface on which the target substrate is placed and has a heater embedded therein to heat the substrate to a deposition temperature at which a film is deposited. The substrate mounting mechanism also includes a temperature control jacket, which is formed to cover at least a surface of the heater plate other than the substrate mounting surface and adjusts the temperature to a non-deposition temperature below the deposition temperature.

Abstract: The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Abstract: Electrostatic chucks with variable pixelated heating are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A light carrying medium is disposed in the base, the light carrying medium configured to provide pixelated light-based heating capability for the ESC.

Abstract: Embodiments of the present invention provide a method for achieving uniform capacitance between a semiconductor wafer and an electrostatic chuck. In certain embodiments, the method comprises the step of forming a layer on a first side of the semiconductor wafer, wherein the layer has a specified resistivity. The method further comprises placing the semiconductor wafer on the electrostatic chuck, wherein the layer contacts the electrostatic chuck. The method further comprises applying a radio frequency signal to the electrostatic chuck, and processing a second side of the semiconductor wafer.

Abstract: A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. The method also includes providing an insulator ring, wherein the second edge ring is disposed above the insulator ring.

Abstract: A wafer translator and a wafer, removably attached to each other, provides the electrical connection to electrical contacts on integrated circuits on a wafer in such a manner that the electrical contacts are substantially undamaged in the process of making such electrical connections. Various embodiments of the present invention provide a gasketless sealing means for facilitating the formation by vacuum attachment of the wafer/wafer translator pair. In this way, no gasket is required to be disposed between the wafer and the wafer translator. Air, or gas, is evacuated from between the wafer and wafer translator through one or more evacuation pathways in the gasketless sealing means.

Abstract: In a semiconductor manufacturing apparatus member, paths that may become a discharge path between a wafer and a cooling device are a first path and a second path. The first path is the shortest path from a hole to a hole across a plug. The length of the first path is larger than the thickness of the plug. The second path is the shortest path that extends from one of holes to an outer peripheral surface of the plug along an adhesive layer, and the shortest path from a hole in a bonding sheet to the outer peripheral surface of the plug along the bonding sheet. The sum of the lengths of these respective paths is larger than the thickness of the plug.

Abstract: A plasma processing apparatus includes a metallic basic material arranged in a sample stage, a dielectric film of dielectric material disposed on an upper surface of the basic material, the dielectric film being formed through a plasma spray process; a film-shaped heater disposed in the dielectric film, the heater being formed through a plasma spray process; an adhesive layer arranged on the dielectric film; a sintered ceramic plate having a thickness ranging from about 0.2 mm to about 0.4 mm, the sintered ceramic plate being adhered onto the dielectric film by the adhesive layer; a sensor disposed in the basic material for sensing a temperature; and a controller for receiving an output from the sensor and adjusting quantity of heat generated by the heater.

Abstract: Methods of clamping and declamping a wafer from a platen are disclosed. The platen comprises one or more electrodes, which are electrically biased to electrostatically clamp the wafer to the platen. The electrode is biased to a first voltage where the wafer may be processed. Thereafter, one or more voltages are subsequently applied to the electrodes. In some embodiments, each subsequent voltage is less than the previously applied voltage. In other embodiments, one or more of the subsequent voltages may be greater than the previously applied voltage. This sequence of voltage may reduce the likelihood that the wafer will stick or adhere to the platen during the removal process.

Abstract: A wafer bonding method includes: holding a first substrate with an upper holding mechanism 7 by applying a voltage to the upper holding mechanism 7; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism 8; and dechucking the bonded substrate from the upper holding mechanism 7 after a voltage which attenuates while alternating is applied to the upper holding mechanism 7. By applying the voltage which attenuates while alternating to the upper holding mechanism 7, residual attracting force between the bonded substrate and the upper holding mechanism 7 is reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.

Abstract: The invention relates to a method of loading a first object on a second object in a lithographic apparatus. The method includes: a) loading the first object on the second object, b) waiting a predetermined time interval and c) performing a relaxation action. The first object may be a substrate and the second object a substrate table. The first object may also be a substrate table and the second object a support structure, supporting the substrate table.

Abstract: A distributed power arrangement to provide local power delivery in a plasma processing system during substrate processing is provided. The distributed power arrangement includes a set of direct current (DC) power supply units. The distributed power arrangement also includes a plurality of power generators, which is configured to receive power from the set of DC power supply units. Each power generator of the plurality of power generators is coupled to a set of electrical elements, thereby enabling the each power generator of the plurality of power generators to control the local power delivery.

Abstract: A method of removing an epoxy band from an electrostatic chuck includes securing the electrostatic chuck in a servicing fixture, applying a thermal source to the epoxy band to breakdown a plurality of adhesive bonds securing the epoxy band to the electrostatic chuck, forming a hole in the epoxy band and pulling the epoxy band from the electrostatic chuck. A system for removing an epoxy band from an electrostatic chuck is also described.

Abstract: An electroadhesive gripping platform includes one or more electrodes. A power supply is configured to apply voltage to the one or more electrodes in the electroadhesive platform via one or more terminals. A controller is configured to operate the electroadhesive gripping platform to selectively adhere to items loaded thereon and thereby enhance traction control over such items. The controller can control the power supply to apply a voltage to the one or more electrodes in the electroadhesive platform to thereby cause the electroadhesive platform to adhere to an item disposed on the electroadhesive platform such that the item resists moving with respect to the electroadhesive platform. The controller can also control the voltage supply to reduce the voltage applied to the one or more terminals such that the item moves with respect to the electroadhesive platform.

Abstract: According to an aspect of an embodiment of the invention, there is provided an AC-driven electrostatic chuck including: a dielectric substrate including protrusions formed on a major surface on a side of mounting a clamped object, and a bottom surface part formed around the protrusions; and an electrode provided on the dielectric substrate, the electrode including a plurality of electrode elements spaced from each other, the plurality of electrode elements being enabled to be applied with an AC voltage of mutually different phases, respectively, and the protrusions being arranged on the major surface with a prescribed spacing depending on shape of the plurality of electrode elements. The AC-driven electrostatic chuck is capable of suppressing local damage to part of the protrusions provided on the mounting surface side.

Abstract: A substrate processing apparatus includes a processing chamber and a substrate mounting table. The processing chamber defines a processing space. The substrate mounting table includes a base and an electrostatic chuck, and is disposed in the processing space. The base has a coolant path formed therein. The electrostatic chuck is provided on the upper surface of the base through an adhesive layer formed by curing a liquid adhesive, and has an electrode therein. Here, a first adhesive region is provided on the upper surface of the base, and is adhered to the electrostatic chuck through the adhesive layer. The first adhesive region has a center portion recessed compared with the end portion of the first adhesive region.

Abstract: A method for performing chamber-to-chamber matching includes receiving a voltage and a current measured at an output of an RF generator of a first plasma system. The method further includes calculating a sum of terms. The first term is a first product of a coefficient and a function of the voltage. The second term is a second product of a coefficient and a function of the current. The third term is a third product of a coefficient, a function of the voltage, and a function of the current. The method further includes determining the sum to be the etch rate associated with the first plasma system and adjusting power output from an RF generator of a second plasma system to achieve the etch rate associated with the first plasma system.

Abstract: A method for producing a wired circuit board includes the steps of preparing a metal supporting layer; forming an insulating layer on the metal supporting layer; roughening the surface of the insulating layer; forming a conductive pattern on the insulating layer; and inspecting the presence or absence of a defect of the conductive pattern by using an inspection device provided with a light emitting portion emitting incident light that enters the insulating layer and the conductive pattern and a light receiving portion receiving reflected light that is reflected from the incident light. The incident light has a wavelength in the range of 435 to 500 nm and includes inclined light that inclines so as to form an angle of more than 0° to not more than 30° with respect to the optical axis thereof.

Abstract: An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.

Abstract: To improve an apparatus reliability by applying a voltage suitable to a situation, a charged-particle-beam apparatus 1 of the present invention includes: a sample stage 25; an electrostatic chuck 30; and an electrostatic-chuck controlling unit 13, and generates an image of a sample 24 by irradiating the sample 24 held on the sample stage 25 by the electrostatic chuck 30 with an electron beam 16. The electrostatic-chuck controlling unit 13, when the electrostatic chuck 30 holds the sample 24, applies a preset initial voltage to a chuck electrode of the electrostatic chuck 30; determines whether or not the sample 24 is normally clamped to the electrostatic chuck 30; and increases the voltage applied to the chuck electrode until determining that the sample 24 is clamped normally to the electrostatic chuck 30 if determining that the sample 24 is not clamped normally to the electrostatic chuck 30.

Abstract: A substrate placement process uses a tray in which a plurality of substrate receiving holes are provided to receive substrates and which has substrate support portions protruding from inner walls of the substrate receiving holes. The tray is placed onto a tray support portion of a substrate stage and places substrates onto substrate holding portions, respectively, so that edge portions of the substrates projected beyond end edges of the substrate holding portions and are apart from the substrate support portions. The first plasma processing process reduces internal pressure of a chamber and supplies a process gas thereto to fulfill plasma processing for the individual substrates.

Abstract: A device includes a substrate; a group III-V semiconductor layer disposed over the substrate; and a seed layer disposed over the group III-V semiconductor layer. The substrate is a printed circuit board. The group III-V semiconductor layer includes a multiple quantum well (MQW) layer, a p-type doped layer, and an n-type doped layer. The seed layer includes a plurality of miniature elements. The miniature elements each contain a single-crystal material suitable for epitaxially growing the group III-V semiconductor layer. The miniature elements collectively cover less than 100% of a surface of the group III-V semiconductor layer.

Abstract: Disclosed is a method for removing an oxide film formed on a surface of a silicon wafer, comprising steps of: preparing a silicon wafer having an oxide film formed thereon; arranging a discoid wafer mounting stage, which has a contact portion with the oxide film being formed of an acid-resistant resin layer, in a reaction container of a vapor-phase etching apparatus; mounting the silicon wafer on the mounting stage in such a manner that a wafer center coincides with a central axis of the mounting stage; and circulating a hydrogen fluoride containing gas into the reaction container and removing the oxide film from an interface between a chamfered surface and a wafer lower surface toward the inner side of the wafer until a desired interval a is obtained, wherein the desired interval a is adjusted by changing a stage diameter of the mounting stage.

Abstract: Embodiments are directed to an electrostatic chuck surface having minimum contact area features. More particularly, embodiments of the present invention provide an electrostatic chuck assembly having a pattern of raised, elongated surface features for providing reduced particle generation and reduced wear of substrates and chucking devices.

Abstract: An electrostatic chuck includes: a ceramic dielectric substrate having a first major surface and a second major surface; an electrode interposed between the first and second major surfaces; and a connecting part connected to the electrode and including a first region in contact with the electrode, with a first direction being defined as a direction from the first major surface toward the second major surface, and a second direction being defined as a direction orthogonal to the first direction, the first region being configured so that in a cross section of the electrode and the connecting part as viewed in the second direction, an angle on a side of the connecting part between an extension line along outer shape on the side of second major surface of the electrode and a tangential line of outer shape of the connecting part gradually increases in the first direction.

Abstract: Embodiments of the present invention provide a method for achieving uniform capacitance between a semiconductor wafer and an electrostatic chuck. In certain embodiments, the method comprises the step of forming a layer on a first side of the semiconductor wafer, wherein the layer has a specified resistivity. The method further comprises placing the semiconductor wafer on the electrostatic chuck, wherein the layer contacts the electrostatic chuck. The method further comprises applying a radio frequency signal to the electrostatic chuck, and processing a second side of the semiconductor wafer.

Abstract: A control system that includes deflection sensors which can control clamping forces applied by electrostatic chucks, and related methods are disclosed. By using a sensor to determine a deflection of a workpiece supported by an electrostatic chuck, a control system may use the deflection measured to control a clamping force applied to the workpiece by the electrostatic chuck. The control system applies a clamping voltage to the electrostatic chuck so that the clamping force reaches and maintains a target clamping force. In this manner, the clamping force may secure the workpiece to the electrostatic chuck to enable manufacturing operations to be performed while preventing workpiece damage resulting from unnecessary higher values of the clamping force.

Abstract: The present invention provides a method for containing unwanted electric charge that accumulates on the surface of the dielectric of an electrostatic clamp. One source of such charge is found to be from the triple points where conductive interconnect lines 28 and conductive burl coatings 26 contact the surface of the dielectric 20. These triple points are potted by means of an insulating material 29 such that any emitted electrons are contained. While the interconnect lines 28 are completely covered, in the case of the conductive burl coating 26 although the burl 25 cannot be completely covered by the insulating material, the triple point is moved to a region where there is no or at least only low electric field whereby there is no or only little emission of electrons.

Abstract: An electrostatic clamp is provided having a clamping plate, wherein the clamping plate has a central region and an annulus region. A plurality of gas supply orifices are defined in the central region of the clamping plate, wherein the plurality of gas supply orifices are in fluid communication with a pressurized gas supply, and wherein the pressurized gas supply is configured to provide a cushion of gas between the clamping surface and the workpiece in the central region of the clamping plate via the plurality of gas supply orifices. One or more gas return orifices defined in one or more of the central region and annulus region of the clamping plate, wherein the one or more gas return orifices are in fluid communication with a vacuum source, therein generally defining an exhaust path for the cushion of gas.

Abstract: A tri-modal carrier provides a structural platform to temporarily bond a semiconductive wafer and can be used to transport the semiconductive wafer or be used to perform manufacturing processes on the semiconductive wafer. The tri-modal carrier includes a doped semiconductive substrate, a plurality of electrostatic field generating (EFG) circuits, and a capacitance charging interface. A positive pole and a negative pole from each EFG circuit are embedded into the doped semiconductive substrate. An exposed portion of the doped semiconductive substrate is located between the positive pole and the negative pole, which is used as a biased pole for each EFG circuit. The combination of these poles for each EFG circuit is used to generate a non-uniform electrostatic field for bonding the semiconductive wafer. The tri-modal carrier also uses flat surface properties and the removal of trapped gas particles to strengthen the bond between the tri-modal carrier and the semiconductive wafer.

Abstract: A placement table includes: a base; an electrostatic chuck disposed on the base and including a placement surface on which a workpiece is placed; a plurality of heat generating members disposed at a side opposite to the placement surface of the electrostatic chuck; a power supply configured to generate a current for causing each of the plurality of heat generating members to generate heat; a plurality of electric wires installed to extend in a direction crossing the placement surface from the plurality of heat generating members, respectively, and configured to connect the power supply with the heat generating members, respectively; and a filter mounted on each of the plurality of electric wires to remove a high frequency component having a frequency higher than that of the current generated by the power supply.

Abstract: In various aspects of the disclosure, a semiconductor substrate processing system may include an electrostatic chuck for holding a semiconductor substrate attached to an electrically insulating carrier; and an AC power supply electrically coupled to the electrostatic chuck.