Abstract: One aspect of an inverter device of the present disclosure includes a capacitor module having a capacitor element and a capacitor case that houses the capacitor element, and a housing having a housing space for housing the capacitor module. The housing includes a wall portion that is provided with a flow path through which a refrigerant flows and a first opening portion that allows a part of the flow path to open toward the housing space. The capacitor case includes a heat transfer portion that is made of metal and configured to cover the first opening portion. The refrigerant flows between an inner wall surface of the first opening portion and the heat transfer portion.

Abstract: An exemplary system includes an inverter coupled to a DC source, eight power switches and three DC-link capacitors that synthesize seven output voltage levels. In one example the inverter includes a four-level active neutral pointed clamped inverter (4L-ANCP) that includes six power switches of the eight power switches is operated at a switching frequency with a first voltage stress level, and a half-bridge that includes the other two of the eight power switches is coupled to the 4L-ANCP and operated at a fundamental frequency with a second voltage stress, the second voltage stress being higher than the first voltage stress level.

Abstract: Embodiments include semiconductor packages. A semiconductor package includes first and second bottom dies on a package substrate, first top dies on the first bottom die, and second top dies on the second bottom die. The semiconductor package includes thermally conductive slugs on the first bottom die and the second bottom die. The thermally conductive slugs are comprised of a high thermal conductive material. The thermally conductive slugs are positioned directly on outer edges of top surfaces of the first and second bottom dies, inner edges of the top surfaces of the first and second bottom dies, and/or a top surface of the package substrate. The high thermal conductive material of the thermally conductive slugs is comprised of copper, silver, boron nitride, or graphene. The thermally conductive slugs may have two different thicknesses. The semiconductor package may include an active die and/or an integrated heat spreader with the pedestals.

Abstract: According to the present disclosure, a laptop may be provided with a compartment including a moveable segment, an expandable heat exchanger with a movable section, and an expandable fan unit. The release of the movable segment of the compartment from a lower portion of the compartment produces an opening in the compartment and the movable section of the expandable heat exchanger is extended downward, and the expandable fan unit is lowered when the movable segment of the compartment is released.

Abstract: A power module for an electric axle drive may include a plurality of semiconductor switching elements, where the semiconductor switching elements are attached to a substrate. The power module may also include a control unit electrically connected to the plurality of semiconductor switching elements, where the plurality of semiconductor switching elements includes a first set of semiconductor switching elements dedicated to the electric axle drive. The plurality of semiconductor switching elements may also include a second set of second set of semiconductor switching elements dedicated to a transmission connected to the electric axle drive.

Abstract: An assembly of an electrical device includes: at least one electrical functional assembly which has a supporting element and electrical or electronic functional components arranged on the supporting element; a fastening device for fastening the electrical device to a higher-level assembly; a heat sink core element having at least one face wall; and an external element connectable to the heat sink core element. The heat sink core element forms a supporting structure of the electrical device on which supporting structure the fastening device is arranged. The external element is connectable to the heat sink core element such that the at least one electrical functional assembly is accommodated between the at least one face wall of the heat sink core element and the external element.

Abstract: A semiconductor package includes a package substrate, a logic chip on an upper surface of the package substrate and electrically connected to the package substrate, a heat sink contacting an upper surface of the logic chip to dissipate a heat generating from the logic chip, and a memory chip disposed on an upper surface of the heat sink and electrically connected to the package substrate.

Abstract: A device for cooling a bus bar includes a heat absorption element, a heat transportation system and a heat output element. The heat absorption element and heat output element rest essentially in a form-fit manner on respective heat sources or heat sinks, with additional contact pressure being applied with the heat absorption element and heat output element by compression springs or contact elements.

Abstract: An apparatus and system for temperature mitigation and, more particularly, a flexible heat spreader attachment that flexibly attaches to the periphery of a circuit board, allowing for its use with numerous circuit board shapes and sizes, including those of irregular shapes and sizes. The flexible heat spreader attachment includes a base plate, a heat spreader attached to the base plate, and four adjustable arms attached to the base plate, wherein each of the adjustable arms include circuit board hooks configured to attach to the periphery of a circuit board and maintain the heat spreader at a desired location on, and spaced from, the circuit board.

Abstract: An electric motor and inverter assembly and a method of assembly therefor, the electric motor and inverter assembly having a motor housing portion, a DC bus bar for electrically connecting a DC power source to an inverter power module where the DC bus bar is mounted on the housing portion, and a cooling channel disposed in between the housing portion and the DC bus bar for cooling the DC bus bar.

Abstract: An integrated circuit (IC) package with an embedded heat spreader in a redistribution layer (RDL) is provided. IC packaging facilitates a high density package for ICs, including monolithic microwave integrated circuits (MMICs). However, IC packaging may result in reduced heat removal from an IC, decreasing radio frequency (RF) circuit performance. In an exemplary aspect, an IC package is provided which incorporates an embedded heat spreader within a dielectric layer of an RDL coupled to an IC die. The embedded heat spreader provides efficient heat transfer, robust RF performance, and operation through millimeter wave (mmW) frequencies, all in a miniature low-cost, low-profile surface mountable (SM) package.

Abstract: The purpose of the invention is to achieve a miniaturized power tool. Provided is a hammer drill (1A) that includes: a brushless motor (10) that is a drive source for a tip tool (20); a control unit for controlling the driving of the brushless motor (10); a motor housing (33) to which the brushless motor (10) is attached; and a handle housing (34) provided with a grip (2). The control unit includes: a switching board (12) and a Hall element board (13); and a converter board (11) on which an electrolytic capacitor (11a) is installed. The brushless motor (10) is disposed to be sandwiched between the electrolytic capacitor (11a), and the switching board (12) and the Hall element board (13), along the axial direction (M) of a drive shaft (16) that drives the tip tool (20).

Abstract: An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate (2) layer on which substrate a device/s or component/s (1) are positionable. A heat sink component (4) is attached on another side of the substrate. The arrangement further comprises a conductive layer (5) between the substrate layer (2) and the heat sink component (4). A joint between the substrate layer (2) and the conductive layer (5) has minimal thermal boundary resistance. Another joint between the conductive layer (5) and the cooling heat sink layer (4) is electrically conductive.

Abstract: A semiconductor device includes: an insulating substrate; a first semiconductor element connected to the insulating substrate; a conductive member disposed on the insulating substrate, and including a first opposing portion and a second opposing portion located opposite each other with respect to the first semiconductor element in plan view; a first wire connected to the first semiconductor element and the first opposing portion; and a second wire connected to the first semiconductor element and the second opposing portion, and located opposite the first wire with respect to a connection point where the first wire and the first semiconductor element are connected to each other in plan view.

Abstract: Radio frequency amplifier (200) assembly with effective prevention of RF interference.

Abstract: The present disclosure relates to a waveguide arrangement including a mounting printed circuit board, PCB, and at least a first waveguide layer. Each waveguide layer comprises at least a first waveguide conducting tube, each waveguide conducting tube having an electrically conducting inner wall. The PCB includes a signal interface for each waveguide conducting tube. The waveguide arrangement further includes at least a first coupling layer that is positioned between the PCB and the first waveguide conducting tube such that at least the first waveguide conducting tube of the first waveguide layer is connected to the corresponding signal interface via the first coupling layer.

Abstract: Embodiments include semiconductor packages and a method to form such packages. A semiconductor package includes first, second, and third microelectronic devices on a package substrate. The first microelectronic device has a top surface substantially coplanar to a top surface of the second microelectronic device. The third microelectronic device has a top surface above the top surfaces of the first and second microelectronic devices. The semiconductor package includes a first conductive layer on the first and second microelectronic devices, and a second conductive layer on the third microelectronic device. The second conductive layer has a thickness less than a thickness of the first conductive layer, and a top surface substantially coplanar to a top surface of the first conductive layer. The semiconductor includes thermal interface materials on the first and second conductive layers. The first and second conductive layers are comprised of copper, silver, boron nitride, or graphene.

Abstract: A semiconductor package includes: a first thermal pillar disposed on a package substrate, and having an opening; a first chip stack disposed on the package substrate and in the opening of the first thermal pillar, and including a first lateral surface; a semiconductor chip disposed on the package substrate and in the opening, wherein the semiconductor chip is spaced apart from the first chip stack; and a first heat transfer film disposed between the first thermal pillar and the first lateral surface of the first chip stack.

Abstract: A heat exchange assembly includes a thermal bridge including upper and lower bridge elements including upper and lower plates arranged in plate stacks. The lower plates include lower fin plates and lower spacer plates with lower ends configured to be mechanically and thermally coupled to the electrical component. The upper plates include upper fin plates and upper spacer plates with upper ends configured to be mechanically and thermally coupled to a heat exchanger. The upper and lower fin plates are interleaved. The heat exchange assembly includes installation spring elements coupled between the upper and lower plates and biased against the upper and lower plates during installation. The installation spring elements are removable after the upper and lower plates are coupled to the electrical component and the heat exchanger to remove the biasing force between the upper and lower plates.

Abstract: A nano graphene platelet-based conductive ink comprising: (a) nano graphene platelets (preferably un-oxidized or pristine graphene), and (b) a liquid medium in which the nano graphene platelets are dispersed, wherein the nano graphene platelets occupy a proportion of at least 0.001% by volume based on the total ink volume and a process using the same. The ink can also contain a binder or matrix material and/or a surfactant. The ink may further comprise other fillers, such as carbon nanotubes, carbon nano-fibers, metal nano particles, carbon black, conductive organic species, etc. The graphene platelets preferably have an average thickness no greater than 10 nm and more preferably no greater than 1 nm. These inks can be printed to form a range of electrically or thermally conductive components or printed electronic components.

Abstract: A Monolithic Integrated Circuit (MMIC) cooling structure having a heat spreader thermally comprising a anisotropic material, such material having anisotropic heat conducting properties for conducing heat therethrough along a preferred plane, a surface of the MMIC being thermally coupled to the heat spreader, the preferred plane intersecting the surface of the MMIC; and, a thermally conductive base having a side portion thermally coupled to the heat spreader, the side portion being disposed in a plane intersecting the preferred plane.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first die, a second die, and a thermal dissipation element. The first die has a first surface. The second die is disposed on the first surface. The thermal dissipation element is disposed on the first surface. The thermal dissipation element includes a first portion extending in a first direction substantially parallel to the first surface and partially covered by the second die and a second portion extending in a second direction substantially perpendicular to the first surface to be adjacent to an edge of the second die.

Abstract: Package structures and methods of forming the same are disclosed. The package structure includes a package, a device and a screw. The package includes a plurality of dies, an encapsulant encapsulating the plurality of dies, and a redistribution structure over the plurality of dies and the encapsulant. The device is disposed over the package, wherein the dies and the encapsulant are disposed between the device and the redistribution structure. The screw penetrates through the package and the device.

Abstract: A semiconductor device includes a substrate, a semiconductor device module, and a heat conductor. The semiconductor device module is on the substrate. The semiconductor device module includes an interposer substrate, one or more semiconductor device chips, a covering resin, and a metal film. The one or more semiconductor device chips are on a first surface of the interposer substrate. The covering resin is in contact with the first surface of the interposer substrate and the one or more semiconductor device chips and encloses the one or more semiconductor device chips. The metal film is in contact with the covering resin and covers the covering resin. The heat conductor is in thermal contact with the substrate and the metal film, and has a higher thermal conductivity than the covering resin.

Abstract: A semiconductor package system includes a substrate, a first and a second semiconductor package, a first thermal conductive layer, a first passive device, and a heat radiation structure. The first and second semiconductor package and first passive device may be mounted on a top surface of the substrate. The first semiconductor package may include a first semiconductor chip that includes a plurality of logic circuits. The first thermal conductive layer may be on the first semiconductor package. The heat radiation structure may be on the first thermal conductive layer, the second semiconductor package, and the first passive device. The heat radiation structure may include a first bottom surface physically contacting the first thermal conductive layer, and a second bottom surface at a higher level than that of the first bottom surface. The second bottom surface may be on the second semiconductor package and/or the first passive device.

Abstract: A semiconductor package includes a package substrate, a first semiconductor device arranged on the package substrate, at least one second semiconductor device on the first semiconductor device to partially cover the first semiconductor device from a top down view, a heat dissipating insulation layer coated on the first semiconductor device and the at least one second semiconductor device, a conductive heat dissipation structure arranged on the heat dissipating insulation layer on a portion of the first semiconductor device not covered by the second semiconductor device, and a molding layer on the package substrate to cover the first semiconductor device and the at least one second semiconductor device. The heat dissipating insulation layer is formed of an electrically insulating and thermally conductive material, and the conductive heat dissipation structure formed of an electrically and thermally conductive material.

Abstract: A motor driving device includes a printed board on which a pattern is printed, and a resin board which is formed by molding a resin and on which no pattern is printed, and the printed board is provided on the resin board.

Abstract: An electrical circuit device includes a circuit board including a cavity extending from a top surface of the circuit board to an embedded conductor, an integrated circuit chip in the cavity, an electrical connection between the integrated circuit chip and the embedded conductor, a thermal slug disposed over a top surface of the integrated circuit chip, and a heat sink mounted to an outer surface of the thermal slug for transferring a thermal energy away from the circuit board, the heat sink extending above a top surface of the circuit board.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.

Abstract: The present disclosure discloses a printed circuit board, a method for manufacturing the same and an electronic device. The PCB includes: a core board assembly including a first core board and a second core board which are stacked together, wherein the second core board includes a metal layer formed on a side of the second core board oriented towards the first core board, and the first core board defines a through slot extending through the first core board; a radiator, disposed in the through slot; and a conductive adhering layer, disposed between the metal layer of the second core board and the radiator, wherein the conductive adhering layer is configured to electrically connect the radiator and the metal layer. The present disclosure connects the radiator directly with the metal layer. The implementation of the present disclosure may help cooling the metal layer to improve the cooling performance of the PCB.

Abstract: A connection system of semiconductor packages includes: a printed circuit board having a first surface, and a second surface, opposing the first surface; a first semiconductor package disposed on the first surface of the printed circuit board and connected to the printed circuit board through first electrical connection structures; and a second semiconductor package disposed on the second surface of the printed circuit board and connected to the printed circuit board through second electrical connection structures. The first semiconductor package includes an application processor (AP) and a power management integrated circuit (PMIC) disposed side by side, and the second semiconductor package includes a memory.

Abstract: A multilayer circuit board comprises an inner circuit board, a tin layer, at least one outer circuit board, and a solder mask. The inner circuit board comprises at least one first mounting region and at least one second mounting region. The tin layer is formed on a surface of the inner circuit board except the first mounting region connecting the outer circuit board. The outer circuit board comprises at least one first opening to expose the first mounting region and at least one second opening to expose a portion of the tin layer covering the second mounting region. The inner circuit board, the tin layer, and the outer circuit board together form a middle structure. The solder mask covers the middle structure except the portion and the first mounting region. A treatment layer is formed on the first mounting region.

Abstract: A semiconductor substrate includes a first portion and a second portion. The first portion of the substrate has a first deformation-stress sensor capable of supplying a first stress signal. The second portion of the substrate has a second deformation-stress sensor capable of supplying a second stress signal. The first stress signal and second stress signal are processed by a circuit to produce a compensation signal. The compensation signal is applied in feedback to one of the first and second stress signals to compensate for variations induced in said one of the first and second stress signals by stresses in the semiconductor substrate.

Abstract: In embodiments described herein, an integrated circuit (IC) package is provided. The IC package may include a substrate, an IC die, and a heat spreader. The IC die may have opposing first and second surfaces, where the first surface of the IC die is coupled to a surface of the substrate. The heat spreader may have a surface coupled to the second surface of the IC die by a thermal interface (TI) material. The surface of the heat spreader may have a micro-recess which may include a micro-channel or a micro-dent to direct a flow of TI material towards or away from a predetermined area of the second surface of the IC die based on temperatures of the substrate, the IC die, and/or the heat spreader.

Abstract: A power distribution system element formed via an additive manufacturing technique, such as applying a conductive material to a memory metal substrate, are discussed herein. In operation (e.g. in response to delivering current through the distribution system), the memory metal contracts while the conductive material expands. The result is distribution system element having reduced thermal expansion, which can be net zero coefficient of thermal expansion.

Abstract: A heat dissipating module of an electronic device includes a casing, a circuit board, at least one heat generation element, and a fastening assembly. The casing includes at least one lateral plate. The at least one heat generation element is firmly fixed on the at least one lateral plate through a fixing element. After the at least one lateral plate and the circuit board are combined together through the fastening assembly, the at least one lateral plate and the circuit board pass through a reflow furnace, so that the at least one heat generation element is welded on the circuit board. The heat generated by the at least one heat generation element is transferred to the at least one lateral plate of the casing so as to be dissipated away.

Abstract: A turbomolecular pump device includes: a turbomolecular pump main body; a power unit that drives the turbomolecular pump main body; and a water cooling unit that is provided between the turbomolecular pump main body and the power unit, wherein components provided in a casing of the power unit are classified into an intensive cooling required component that requires intensive cooling, a moderate cooling required component that requires moderate cooling, and a no cooling required component that requires substantially no cooling, the intensive cooling required component is mounted on a first high-conductivity substrate contacting to the water cooling unit, the moderate cooling required component is mounted on a second high heat-conductive substrate contacting to an inner surface of the casing, and the no cooling required component is mounted on a substrate arranged in a space between the first high heat-conductive substrate and the second high heat-conductive substrate.

Abstract: An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy when exposed to a temperature gradient. This material can be used, for example, in a method for detecting the repackaging of the integrated circuit after it has been originally packaged.

Abstract: A backplane for a display device and the display device are disclosed. In one aspect, the backplane includes a substrate, an active layer formed over the substrate including a channel region, a source region contacting a first side of the channel region, and a drain region contacting a second side of the channel region. The backplane further includes a gate electrode formed adjacent to the channel region, a source electrode electrically connected to the source region, and a drain electrode electrically connected to the drain region. The active layer includes a plurality of heat radiation pins that extend in a direction of the thickness of the active layer.

Abstract: A semiconductor device includes an insulating substrate joined with a semiconductor chip, a case covering a surface of the insulating substrate where the semiconductor chip is joined, and a control terminal in which one end portion is electrically connected to the semiconductor chip, and another end portion passes through the case and is exposed to outside of the case. A portion of the control terminal exposed to the outside of the case includes a cut-out section where a part of the exposed portion is cut out, and a blocking section formed by bending a portion surrounded by the cut-out section and remaining on the control terminal. The blocking section contacts the case from the outside of the case and blocks a movement of the control terminal.

Abstract: Provided is a semiconductor device capable of improving heat-radiating performance of a heating element. The semiconductor device of the present invention includes: a heating element (1); a heat-radiating member (2) including an element contact portion (2a) which is held surface contact with a mounting surface (1e); a first pressing member (3) and a second pressing member (4) held in contact with the heating element (1); and a fixation screw (6) for fixing the first pressing member (3) to the heat-radiating member (2) through a through hole (3c) formed through the first pressing member (3). The first pressing member (3) and the second pressing member (4) each include an inclined surface formed so that a component force of an axial force of a tightening force of the fixation screw (6) is generated in a vertical direction with respect to the mounting surface (1e).

Abstract: Heat-dissipating assemblies may comprise mounting tabs attached to heat-generating electrical components at a first surface of each mounting tab. An opposing second surface of each mounting tab may be at least substantially coplanar with the second surfaces of the other mounting tabs. A heat sink element may be attached to the second surfaces of at least some of the mounting tabs. Methods of assembling heat-dissipating assemblies may comprise attaching first surfaces of mounting tabs to at least substantially planar assembly surfaces of an assembly fixture such that the first surfaces of the mounting tabs are at least substantially coplanar with one another. Opposing second surfaces of the mounting tabs may be attached to heat-generating electrical components. The assembly fixture may be removed. A heat sink element may be attached to the at least substantially coplanar first surfaces of at least some of the mounting tabs.

Abstract: A thermal transfer component, a thermal transfer apparatus and a method for cooling a heat generating component located upon a substrate each include a thermally conductive frame having an aperture formed completely through the thermally conductive frame within which aperture is located a thermally conductive plug. The thermally conductive plug aligns with and contacts the heat generating component when the thermally conductive frame and the substrate are mutually aligned and assembled. A spring may further compress the thermally conductive plug against the heat generating component when the thermally conductive frame and the substrate are mutually aligned and assembled. The thermally conductive plug comprises an isotropic thermal transfer material and the thermally conductive frame comprises an anisotropic thermal conductive material to provide for enhanced thermal transfer from the heat generating component to a chassis.

Abstract: A cooling device for an electric energy supply (2) has at least one first heat-dissipating part (3). The power components (4) of the first heat-dissipating part are connected to the cooling device (1) in a thermally conductive manner. A fluid-conducting connection (5) conducts liquid coolant (6) from a pump (7) to a cooler (8) over the first heat-dissipating part (3). One shut-off unit (9?, 9) each is arranged in the fluid-conducting connection (5) at least between the first heat-dissipating part (3) and the cooler (8) and between the pump (7) and the first heat-dissipating part (3). To avoid an overpressure in at least one part (3, 14) to be cooled, at least one pressure-limiting valve (17, 28) is provided.

Abstract: A semiconductor device has a single unit capable of improving adhesion to a cooling body and a heat dissipation performance, and an aggregate of the single units is capable of configuring any circuit at a low cost. A single unit includes copper blocks, an insulating substrate with a conductive pattern, an IGBT chip, a diode chip, a collector terminal pin, implant pins fixed to the chips by solder, a printed circuit board having the implant pins fixed thereto, an emitter terminal pin, a control terminal pin, a collector terminal pin, and a resin case having the above-mentioned components sealed therein. The copper blocks make it possible to improve adhesion to a cooling body and the heat dissipation performance. A plurality of single units can be combined with an inter-unit wiring board to form any circuit.

Abstract: Systems and methods are described that provide multilevel inverters having a plurality of levels using a simplified topology. For single phase systems, embodiments provide a full-bridge topology using bidirectional switching interconnections.

Abstract: A semiconductor switch insulation protection device and a power supply assembly. Said semiconductor switch protection device comprises a semiconductor switch having a metal component, an insulation component, and a pin installed at a bottom plane of said insulation component, and an insulation protection cover having a body with a second hole and a side belt. A front surface of said metal component is installed on a back surface of said insulation component. A metal portion, with a first hole and having a first height, is extended above an upper plane of said insulation component. Said second hole and said side belt are extended toward a back surface of said body, respectively, to form a hole column having a second height and a sidewall having a third height. Said metal portion is disposed in a groove formed by said back surface of said body, hole column and sidewall.

Abstract: The power converter includes a power conversion section which configures a circuit for power conversion, a power bus bar extending from the power conversion section, a terminal block, and a current sensor measuring current flowing in the power bus bar. The terminal block includes a mounting surface to which a terminal portion of the power bus bar is mounted. The mounting surface faces a direction substantially perpendicular to an arrangement direction in which the power conversion section and the terminal block are arranged. The current sensor is located at a side of a bottom surface on the opposite side of the mounting surface in the terminal block. The power bus bar includes: a sensor-surrounded portion surrounded by the current sensor; and an outer surface faced portion located between the sensor-surrounded portion and the terminal portion along an outer surface on the opposite side of the power conversion section.

Abstract: A power converter is provided. The power converter includes a heat sink provided with a holding unit, a plurality of semiconductor devices disposed on the heat sink, and a fixing assembly pressing each of the semiconductor devices toward the heat sink to fix the semiconductor device. The fixing assembly includes a lower push unit disposed on the semiconductor device, and an upper push unit disposed on the lower push unit to press the lower push unit downward, the upper push unit being coupled to the holding unit. The upper push unit includes a central bent part that partially protrudes downward, an insertion part disposed on each of both ends of the central bent part in a left/right direction, the insertion part having a left/right distance therebetween that gradually increases upward, and a fixing bar inserted into the insertion part.

Abstract: A circuit board assembly including a heating device operated during cold boot startup includes a circuit board having a computer component. A thermal transfer device connected to the circuit board assembly acts when the computer component is operating to remove heat generated by the computer component. A heating device operates to heat the thermal transfer device. A field programmable gate array acts to energize the heating device when a temperature defining a cold startup condition at the computer component or the thermal transfer device is sensed. The thermal transfer device when heated by the heating device heats the computer component to greater than the temperature of the cold startup condition. A control device connected to the heating device provides an operational mode of the heating device.