Abstract: A three-dimensional (3D) memory device having a plurality of vertical channel structures includes a first memory block, a second memory block, and a bit line. The first memory block includes first vertical channel structures extending in a vertical direction with respect to a surface of a substrate. The second memory block includes second vertical channel structures on the first vertical channel structures in the vertical direction and first and second string selection lines extending in a first horizontal direction and offset in the vertical direction. The bit line extends in the first horizontal direction between the first and second memory blocks and is shared by the first and second memory blocks. The second memory block may include first and second string selection transistors which are each connected to the bit line and the first string selection line and have different threshold voltages from each other.

Abstract: A technique includes receiving a request to initialize a region of a memory. Content that is stored in the region is encrypted based at least in part on a stored nonce value and a key. The technique includes, in response to the request, performing cryptographic-based initialization of the memory, including altering the stored nonce value to initialize the region of the memory.

Abstract: An operating method of a nonvolatile memory device including a page buffer array in which a plurality of page buffers are arranged in a matrix form includes counting fail bits stored in the page buffers included in first columns determined based on an operation mode from among a plurality of columns of the page buffer array, and determining whether or not a program has passed with respect to memory cells to which the page buffer array is connected, based on a count result corresponding to a number of the fail bits and a reference count determined based on the operation mode.

Abstract: In a semiconductor device, memory modules each having a low power consumption mode that is enabled and disabled by a control signal belong to a memory block. A transmission path of the control signal is provided such that the control signal is inputted in parallel to the memory module via an inside-of-module path, and such that the control signal is outputted by a particular memory module of the memory modules via the inside-of-module path to a downstream outside-of-module path. The particular memory module in the memory block is selected such that it has a greater storage capacity than the other memory modules belonging to this same memory block have.

Abstract: In a memory device having improved reliability, the memory device includes: a memory cell array including memory cells; a program operation controller configured to perform a program operation on the memory cells to any one state among first to nth states; a voltage generator configured to generate operating voltages respectively corresponding to the first to nth states in the program operation; a verify operation controller configured to verify whether the program operation performed on selected memory cells to a kth state, has been completed, and count a number of over-programmed memory cells having a threshold voltage greater than a threshold voltage corresponding to the kth state among the selected memory cells; and an over-program manager configured to increase operating voltages corresponding to (k+1)th to nth states to be greater than default values according to the number of over-programmed memory cells.

Abstract: A system includes a volatile memory to store data and a memory controller to manage the data in the volatile memory. The memory controller includes an inner code generator to generate a respective inner correction code for each of a plurality of blocks of the data in the volatile memory. An outer code generator generates an outer correction code based on the plurality of blocks of the data. The memory controller updates the outer correction code as part of a refresh to the plurality of blocks of the data in the volatile memory.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for a multicore on-die memory controller. An integrated circuit device includes an array of non-volatile memory cells and a microcontroller unit. A microcontroller unit includes a plurality of processing units. Different processing units perform different categories of tasks in parallel for an array of non-volatile memory cells.

Abstract: A decoding method, a memory control circuit unit, and a memory storage device are provided. The method includes: configuring a plurality of read voltage categories, wherein the read voltage categories respectively have a plurality of representative read voltage sets; reading a first physical programming unit according to the representative read voltage sets and executing a decoding operation to obtain a plurality of decoded information; choosing a first read voltage category according to the plurality of decoded information; and reading the first physical programming unit according to the first read voltage sets in the first read voltage category and executing the decoding operation.

Abstract: A data reading method and a storage controller for a rewritable non-volatile memory module are provided. The method includes identifying a plurality of preset bit values corresponding to a plurality of first memory cells of a first physical unit; reading the first memory cells by respectively using a plurality of preset read voltages to obtain a plurality of read bit values corresponding to the first memory cells; adjusting the preset read voltages based on the identified preset bit values and the read bit values corresponding to the first memory cells to obtain a plurality of optimized read voltages; and executing a read command sequence on the first physical unit by using the optimized read voltages.

Abstract: A storage device with a memory may include improved endurance and programming speed by modifying the programming states of the memory blocks. For example, the blocks may be three bit memory blocks, but a dynamic reassignment of verify levels and read margins can result in the block acting like a two bit memory block. Memory blocks may be designed for a certain number of bits per cell (i.e. number of states) and the programming is based on that number. However, single level cell (SLC) programming is still possible in addition to programming according to the number of bits per cell that the memory is designed for. Multiple SLC programming steps can be used to modify the number of states for certain memory cells by the memory controller.

Abstract: A storage method comprises storing a retry table; wherein the retry table recites a plurality of error type patterns, the error type patterns comprises a plurality of default error types; accessing data stored in the flash memory; wherein an access error caused when a control circuit reads the data, the control circuit reads the retry table and performs testing according to the error type patterns sequentially to determine a current error type of the access error, and the control circuit performs an adjusted accessing action according to the current error type.

Abstract: A method for determining two bits errors in transmission of 128 bits and the device for realization of this method is provided. By the method and device, the two error bits transferred bits can be determined and corrected by using least bits in operation. Therefore, the amount of data in transmission is increased with a least quantity and thus the transmission quality is not affected.

Abstract: A memory system includes: a memory device including a plurality of memory blocks; a bad memory block detection unit suitable for performing a test read operation on the plurality of memory blocks to detect a bad memory block; and a controller suitable for controlling the memory device to perform a read reclaim operation to the bad memory block according to a result of detecting the bad memory block by the bad memory block detection unit.

Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.

Abstract: A technique for adapting over-provisioning space in a storage system includes determining one or more workload characteristics in the storage system. Over-provisioning space in the storage system is then adjusted to achieve a target write amplification for the storage system, based on the workload characteristics.

Abstract: A non-volatile memory device including: a page buffer configured to latch a plurality of page data constituting one bit page of a plurality of bit pages, and a control logic configured to compare results of a plurality of read operations performed in response to a high-priority read signal set to select one of a plurality of read signals included in the high-priority read signal set as a high-priority read signal, and determine a low-priority read signal corresponding to the high-priority read signal, wherein the high-priority read signal set is for reading high-priority page data, and the low-priority read signal is for reading low-priority page data.

Abstract: A semiconductor memory device includes nonvolatile memory cells. A first circuit is configured to receive data to be written to the plurality of memory cells, read data from the plurality of memory cells, compare the data to be written to the data that was read, identify each memory cell presently storing a data value that differs from a data value to be written, and identify weak bit data in the existing data. A second circuit is configured to simultaneously program the weak bits and memory cells identified as presently storing the data value that differs from the data value to be written to the memory cell.

Abstract: Techniques are provided for sensing a memory cell configured to store three or more states. A charge may be transferred between a digit line and a node coupled with a sense component using a charge transfer device. During a single read operation, multiple voltages may be applied to the gate of the charge transfer device. The node may be sensed a number of times based on a number of voltages applied to the gate of the charge transfer device. The charge may be transferred by the charge transfer device based on a value of the signal on a digit line and a voltage applied to the gate of the charge transfer device. Based on the charge being transferred and the sense component sensing the node multiple times, a logic state associated with the memory cell may be determined.

Abstract: A method, apparatus and computer program product to be employed by a hardware component under validation, wherein the hardware component having a plurality of processing units each belonging to one of at least two types, such that one of the at least two types of processing units is less error-prone than a remainder of the at least two types. The method comprising: designating one of the processing units of the hardware component under validation that belongs to the less error-prone type as a manager processing unit; initiating execution of a tester program code for testing processing units, by processing units of the hardware component other than the manager processing unit; and, monitoring by the manager processing unit the status of the processing units during execution of the tester program code.

Abstract: A three-dimensional (3D) memory device having a plurality of vertical channel structures includes a first memory block, a second memory block, and a bit line. The first memory block includes first vertical channel structures extending in a vertical direction with respect to a surface of a substrate. The second memory block includes second vertical channel structures on the first vertical channel structures in the vertical direction and first and second string selection lines extending in a first horizontal direction and offset in the vertical direction. The bit line extends in the first horizontal direction between the first and second memory blocks and is shared by the first and second memory blocks. The second memory block may include first and second string selection transistors which are each connected to the bit line and the first string selection line and have different threshold voltages from each other.

Abstract: The method of operating a storage device includes receiving a command, an address, and data, and comparing data previously stored at a storage space of the nonvolatile memory corresponding to the address with the received data in response to the command. The method includes writing the received data at a nonvolatile memory when the previously stored data is different from the received data. Writing of the received data is terminated when the previously stored data is equal to the received data.

Abstract: Methods, systems, and devices for operating a memory cell or cells are described. An error in stored data may be detected by an error correction code (ECC) operation during sensing of the memory cells used to store the data. The error may be indicated in hardware by generating a measurable signal on an output node. For example, the voltage at the output node may be changed from a first value to a second value. A device monitoring the output node may determine an error has occurred for a set of data based at least in part on the change in the signal at the output node.

Abstract: A system may maintain a plurality of datasets within a fleet of memories subject to degraded operations caused by state transitions. A dataset maintained on one of the memories may be relocated to another memory. The dataset may be selected based on recorded observations that may be converted into a metric indicative of state transitions associated with maintaining a dataset. A dataset may be selected for relocation based on being associated with a high number of state transitions. The dataset may be relocated to a memory currently having a long operational lifetime relative to other memories in the fleet.

Abstract: A device that provides error recovery handling includes a processor that is configured to receive an error recovery request including error type information and a page address, where the error type information is mapped to a first error recovery technique. The processor may be configured to determine whether an error count associated with the flash memory circuit satisfies a first criterion and an error map associated with the flash memory circuit satisfies a second criterion, where the error count indicates a number of read errors that have occurred and the error map indicates blocks in which the read errors have occurred. The processor may be configured to utilize a second technique to attempt to recover data when the first and second criterions are satisfied, otherwise utilize the first technique to attempt to recover data, where the second technique is associated with recovering data stored in an offline flash memory circuit.

Abstract: Disclosed herein are systems, methods, and devices for user configurable wear leveling of non-volatile memory devices. Devices include a non-volatile memory including a plurality of physical memory portions, where each of the plurality of physical memory portions is configured to be mapped to a logical memory portion of a plurality of logical memory portions. Devices may also include wear leveling control circuitry configured to receive a plurality of wear leveling parameters, and further configured to determine a plurality of wear leveling characteristics based on the plurality of wear leveling parameters received, where the plurality of wear leveling characteristics identify an amount of wear leveling allowed for each of the plurality of logical memory portions.

Abstract: The present disclosure includes apparatuses and methods for data movement. An example apparatus includes a memory device that includes a plurality of subarrays of memory cells and sensing circuitry coupled to the plurality of subarrays. The sensing circuitry includes a sense amplifier and a compute component. The memory device includes a latch selectably coupled to a column of the memory cells and configured to store a data value moved from the sensing circuitry. The memory device includes a controller configured to direct movement of the data value from the sensing circuitry to the latch.

Abstract: A system and method pertains to operating non-volatile memory systems. Technology disclosed herein efficiently uses memory available in non-volatile storage devices in a non-volatile memory system. In some aspects, non-volatile storage devices enforce a redundancy coding stripe across the non-volatile storage devices formed from chunks of data having internal addresses assigned in a coordinated scheme across the storage devices. In some aspects, non-volatile storage devices enforce a redundancy coding stripe across the non-volatile storage devices at the same internal addresses in the respective non-volatile storage devices.

Abstract: An error correcting method of a memory system includes: reading read data and an error correction code from a plurality of memory chips; correcting an error of the read data using the error correction code; temporarily storing the read data and the error correction code in a buffer when the correcting of the error fails; writing a certain input test pattern in the plurality of memory chips, reading an output test pattern written in the plurality of memory chips, and detecting a fail chip in which a chipkill occurs; recorrecting, based on a location of the detected fail chip, the error of the read data stored in the buffer using the error correction code stored in the buffer; and rewriting error-corrected read data and the error correction code in the plurality of memory chips.

Abstract: A first bit of an aggressor codeword is written to a first memory cell, wherein the write to the first memory cell disturbs a set of one or more victim codewords by contributing to a cumulative effect that can change a value of a victim codeword in the set based on proximity to the first memory cell. A second bit of the aggressor codeword is written to a second memory cell, wherein the write to the second memory cell disturbs at most the one or more victim codewords of the set by contributing to the cumulative effect based on proximity to the second memory cell. The second memory cell is separated from the first memory cell by at least a third memory cell, wherein the third memory cell stores a first bit of a second codeword.

Abstract: The present disclosure generally relates to methods for managing bad pages in storage devices. When a page is bad or faulty, a spare page is used to store the data because the bad or faulty page is unreliable for data storage. When the time comes to read the data from the bad page or write data onto the page, there needs to be some direction to the spare page. The bad or faulty page may contain a pointer to direct to the location of the spare page or metadata containing directions to the location of the spare page. A hash function may be used to calculate that the stored data in the bad or faulty page is incorrect and, once decoded, provide direction to the spare page. By using pointers, metadata or hash functions, additional data tables are unnecessary and data storage is more efficient.

Abstract: A controller includes an internal memory to store an address and a memory control unit operatively coupled with the internal memory. The memory control unit includes logic to identify a malfunctioning address of primary data storage elements within an external memory device, the external memory device being another semiconductor device separate from the controller, store the malfunctioning address in the internal memory, and transmit, to the external memory device, a command to initiate a repair of the malfunctioning address using redundant data storage elements and an indication of an address associated with the malfunctioning address.

Abstract: A method for programming a non-volatile memory in a programming operation is provided. The non-volatile memory has a number of cells and each of part of the cells stores data having at least 2 bits at least corresponding to a first page and a second page. The first programming-verifying operation including programming the first page and verifying whether the first page is successfully programmed is performed. When a first original fail-bit number for the first page is more than a predetermined fail-bit value, a second programming-verifying operation to the first page is performed to obtain a first over-counting fail-bit number for the first page and reduce the first original fail-bit number by the first over-counting fail-bit number. When the reduced first original fail-bit number is not more than the predetermined fail-bit value, the first page is set as successfully programmed.

Abstract: A memory device includes a first fail address register that stores a fail address, an input address register that stores an input address, a data comparison circuit that compares write data to be stored in a memory cell corresponding to the input address with read data read from the memory cell, an address comparison circuit that compares the fail address and the input address, and a second fail address register that stores bits of the fail address in parallel based on a first comparison result of the write data with the read data and a second comparison result of the fail address with the input address.

Abstract: A transconductance test method implemented in a flash memory device detects memory cells with low transconductance and provides an output identifying memory cells, if any, having been classified as having a low transconductance (low gm). In some embodiments, the transconductance test method implements multi-step testing using a pair of gate bias levels for each test step. Accurate detection of memory cells with low transconductance can be realized.

Abstract: Data is read from memory cells in the memory device. The read data is transferred over a link to a memory controller that is external of the memory device. While the transferring of the read data is ongoing, error detection of the read data is performed inside the memory device using an error correction code.

Abstract: A memory system comprising: a memory device including a plurality of memory dies each having a plurality of the memory blocks; and a controller suitable for performing a command operation to the memory dies, wherein the memory device comprises means for performing an error check operation to a first data provided from the controller to store the first data the memory device.

Abstract: Systems and methods are described for predicting potential failures in flash memory devices by probing for memory cells with marginal programming characteristics. A method includes receiving a write request. The method also includes applying a predetermined number of programming pulses to a plurality of memory cells within a block of a flash memory device. The method also includes applying a verify pulse to each respective one of the plurality of memory cells. The method also includes storing programming status of the plurality of memory cells into a set of latches. The method also includes determining, based on the stored programming status, a total number of memory cells within the block that fall outside of one or more predetermined expected ranges. The method also includes identifying the block as a block in risk when the total number of memory cells satisfies a predetermined risk threshold.

Abstract: A storage device includes a plurality of nonvolatile memory devices each exchanging data by using a data strobe signal and a data signal, and a storage controller categorizing the plurality of nonvolatile memory devices into a plurality of groups and performing training in units of the plurality of groups. The storage controller performs data training on a first nonvolatile memory device selected in a first group of the plurality of groups and sets a delay of a data signal of a second nonvolatile memory device included in the first group by using a result value of the data training for the first nonvolatile memory device.

Abstract: A dynamic random access memory (DRAM) device includes a plurality of bank groups of first storage cells, each bank group arranged as a plurality of banks, each bank arranged as a plurality of rows, and each row including a plurality of dynamic storage cells. The DRAM device further includes a post-package repair (PPR) storage array arranged as a plurality of entries, wherein the DRAM device is configured to map a first row failure in a first bank group to a first entry of the PPR storage array, and to map a second row failure in a second bank group to a second entry of the PPR storage array.

Abstract: Devices and techniques for managing partial superblocks in a NAND device are described herein. A set of superblock candidates is calculated. Here, a superblock may have a set of blocks that share a same position in each plane in each die of a NAND array of the NAND device. A set of partial super block candidates is also calculated. A partial superblock candidate is a superblock candidate that has at least one plane that has a bad block. A partial superblock use classification may then be obtained. Superblocks may be established for the NAND device by using members of the set of superblock candidates after removing the set of partial superblock candidates from the set of superblock candidates. Partial superblocks may then be established for classes of data in the NAND device according to the partial superblock use classification.

Abstract: A method of operating an electronic device includes: generating a fuse read output based on reading a fuse cell at a predetermined data location in a fuse array, wherein the predetermined data location is configured to store predetermined data pattern; comparing the fuse read output to the predetermined data pattern; and generating a read-enable trigger based on the fuse read output matching the predetermined data pattern, wherein the read-enable trigger is for reading content stored in the fuse array and for broadcasting the content to circuits within the electronic device.

Abstract: Devices and techniques for NAND cell encoding to improve data integrity are disclosed herein. A high-temperature indicator is obtained and a write operation is received. The write operation is then performed on a NAND cell using a modified encoding in response to the high-temperature indicator. The modified encoding includes a reduced number of voltage distribution positions from an unmodified encoding without changing voltage distribution widths, where each voltage distribution corresponds to a discrete set of states an encoding.

Abstract: A semiconductor memory device includes a plurality of blocks of memory cells, including first, second, and third blocks of a first group of blocks and fourth fifth and sixth blocks of a second group of blocks, a plurality of word lines for each of the blocks, a first decode circuit for the first group, and a second decode circuit for the second group. When the first block is selected, the first decode circuit transfers a first voltage to the word lines of the first block, transfers a second voltage lower than the first voltage to the word lines of the second block, and causes the word lines of the third block to go into an electrically floating state, and the second decode circuit causes the words lines of the fourth block, the fifth block, and the sixth block into the electrically floating state.

Abstract: Memory devices and methods are described that include a stack of memory dies and a logic die. Method and devices described include those that provide for repartitioning the stack of memory dies and storing the new partitions in a memory map. Repartitioning in selected configurations allows portions of memory to be removed from use without affecting the rest of the memory device. Additional devices, systems, and methods are disclosed.

Abstract: In a method of controlling reclaim of a nonvolatile memory device including a plurality of memory blocks, wherein each of the memory blocks includes a plurality of pages, a recovery read operation is performed on first data using an optimal read voltage determined based on the first data, when the first data includes errors which are not correctable, wherein the first data is read from a first page of a first memory block of the memory blocks, and, when the errors of the first data are corrected after the recovery read operation is performed, whether to perform a reclaim of the first page is determined based on threshold voltage distributions of memory cells of the first page, wherein the memory cells are disposed in a region of interest adjacent to the optimal read voltage.

Abstract: A non-volatile memory device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to selectively control the plurality of word lines, a page buffer including a plurality of latches corresponding to the plurality of bit lines, respectively, and a control circuit configured to control the non-volatile memory device to enter a suspend state after terminating a verify operation of a program loop of a program operation of the plurality of memory cells in response to a suspend request being generated during an execution operation of the program loop.

Abstract: An error information storage circuit configured to write information stored in a plurality of fuse sets to a plurality of fuse latch sets of a core block and/or to write test data to the plurality of fuse latch sets. The test data is internally generated depending on a fuse clock signal, and the test data has values which cause opposite levels to be written in adjacent latches of the plurality of fuse latch sets.

Abstract: Methods, systems and computer-readable storage media for increasing spare space in a storage subsystem including a flash memory, extending a lifetime of the storage subsystem to achieve a stored selected minimum lifetime based at least in part as a result of the increasing spare space, and identifying at least one aspect associated with the lifetime of the storage subsystem. The storage subsystem may include compressed data stored in the flash memory.

Abstract: A resistive processing unit includes a first analog memory element, a second analog memory element connected in series with the first analog memory element, and a control circuit coupled to the first analog memory element and the second analog memory element. The control circuit is configured to read a synaptic weight value of the resistive processing unit by collecting a differential current from the first analog memory element and the second analog memory element on at least one of a read column line and a read row line coupled to a terminal coupling the first analog memory element and the second analog memory element.

Abstract: Tier access mode for three dimensional (3D) memory devices. A 3D memory device has multiple memory elements that are each addressable by a two dimensional address including a wordline address and a bitline address, and a third dimension with a sub-block selector indicating one of multiple portions of a tier of memory elements in the memory device. A memory controller generates a memory access command, such as read or program, to access a first portion of the memory and sends the command to the memory device. The memory device charges a first wordline and a first sub-block in response to receiving the command. For a consecutive access command to access a second portion of the memory, the memory device maintains the first wordline charged without discharging it, and charges a second sub-block selector in response to the consecutive command.