Abstract: Different ramp rates for different regions, or zones, of word lines are used for the pass voltage applied to unselected word lines during a program operation. The properties of the word lines, such as their resistance and capacitance (RC) values, vary across the NAND memory array. By determining the RC values of the word lines across the array, the word lines can be broken into multiple zones based on these properties. The zones can then be individually assigned different ramp rates for applying a pass voltage to the unselected word lines, where a parameter for the ramp rates can be stored as a register value on the memory die.

Abstract: The memory device includes an array of memory cells, which are configured to retain multiple bits per memory cell, arranged in a plurality of word lines. A controller is configured to program the memory cells of a selected word line in a first programming pass. The first programming pass includes a plurality of programming pulses, each including the application of a programming voltage Vpgm by the controller to a control gate of the selected word line for a first duration. The controller is also configured to further program the memory cells of the selected word line in a second programming pass. The second programming pass includes a plurality of programming pulses, each of which includes the application of a programming voltage Vpgm by the controller to the control gate of the selected word line for a second duration that is different than the first duration.

Abstract: A compute-in-memory (CIM) device has a memory array with a plurality of memory cells arranged in rows and columns. The plurality of memory cells includes a first memory cell in a first row and a first column of the memory array and a second memory cell in the first row and a second column of the memory array. The first and second memory cells are configured to store respective first and second weight signals. An input driver provides a plurality of input signals. A first logic circuit is coupled to the first memory cell to provide a first output signal based on a first input signal from the input driver and the first weight signal. A second logic circuit is coupled to the second memory cell to provide a second output signal based on a second input signal from the input driver and the second weight signal.

Abstract: A memory controller includes a test controller, a test information storage, and a machine learning processor. The test controller performs a test on a memory device using a target pattern selected from among a plurality of test patterns in each of a plurality of test modes in which voltage and time conditions of test signals are set differently. The test information storage stores test result information including values associated with fail bits of the memory device measured in the test. The machine learning processor detects a defect acceleration mode in which a defect of the memory device is accelerated, among the plurality of test modes, in the test performed using the target pattern on the basis of the test result information.

Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array, to perform operations including initiating a read recovery process associated with a block of the memory array. The block includes wordlines at an initial voltage. The operations further include causing an early discharge sequence to be performed on a first set of wordlines of the wordlines during the read recovery process to alleviate latent read disturb. The early discharge sequence includes ramping the first set of wordlines from the initial voltage to a ramping voltage while maintaining a second set of wordlines of the wordlines at the initial voltage.

Abstract: A pumping capacitor is provided. The pumping capacitor includes: first, second, third and fourth electrodes that are separately formed on a substrate; a first pumping capacitor group, wherein i first cell capacitors have lower electrodes formed on the first pad electrode and upper electrodes connected to a plate electrode, and (n?i) first cell capacitors have lower electrodes formed on the second pad electrode and upper electrodes connected to the plate electrode; and a second pumping capacitor group, wherein i second cell capacitors have lower electrodes formed on the fourth pad electrode and upper electrodes connected to the plate electrode, and (n?i) second cell capacitors have lower electrodes formed on the third pad electrode and upper electrodes connected to the plate electrode. The first pumping capacitor group and the second pumping capacitor group are connected in series, and the second pad electrode and the third pad electrode are floated.

Abstract: A semiconductor memory device includes a memory cell array (MCA) and a pass transistor unit (PTU). The MCA includes memory block(s) that has source selection line(s) (SSL), word lines (WLs), drain selection line(s) (DSL), and dummy WL(s) (DWL). The PTU includes source pass transistor(s) to selectively transmit a source driving signal (source DS) to the SSL, memory pass transistors (MPTs) to selectively transmit a WL DS to the WLs, respectively, drain pass transistor(s) (PT) to selectively transmit a drain DS to the DSL, and dummy PT(s) to selectively transmit a DWL DS to the DWL. The source DS, the WL DS, the drain DS, and the DWL DS may each be associated with a respective voltage range. Sizes of the source PT, the MPTs, the drain PT, and the dummy PTs are set based on the respective voltage ranges.

Abstract: A semiconductor memory device includes memory cell transistors and a control circuit. In a write operation, the control circuit executes multiple loops each including a program operation, a verify operation, and a bit scan operation. In the bit scan operation, the control circuit performs, a first process of generating verify result data in parallel for a group of memory cell transistors having different target threshold voltage states, the verify result data for each memory cell transistor in the group indicating whether the memory cell transistor has reached its target threshold voltage state, and a second process of calculating for each of the target threshold voltage states, the number of memory cell transistors that have not reached their target threshold voltage states.

Abstract: Embodiments provide a memory and a fabrication method thereof, and relates to the field of storage device technology to solve the technical problem of lower storage density of the memory. The fabrication method of the memory includes: providing a substrate including a central region and an edge region connected to each other, a first contact structure electrically connected to a wordline structure in the substrate being formed in the edge region; forming a second contact structure electrically connected to the first contact structure on the edge region; forming a capacitor structure electrically connected to the wordline structure on the central region; forming a third contact structure electrically connected to the second contact structure on the second contact structure; and forming a transistor structure electrically connected to the wordline structure on the capacitor structure and the third contact structure.

Abstract: In order to lower the peak and average current through the channel (thereby lowering peak and average power consumption) during program-verify, which exhibits a word line dependency, the inventors propose to program dummy memory cells connected to a dummy word line before programming data memory cells connected to a data word line. The additional resistance in the NAND string introduced by the preprogrammed dummy memory cells will cause the peak current, and power consumption, to be lower. To address the word line dependency, the dummy memory cells connected to the dummy word line can be programmed to different threshold voltages based on which data word line is to be programmed. Thus, prior to programming data non-volatile memory cells connected to a particular data word line, the dummy memory cells are programmed to a threshold voltage that is chosen based on the position of the particular data word line.

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer.

Abstract: Described are systems and methods for implementing continuous memory programming operations. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of conductive lines; and a controller coupled to the memory array.

Abstract: A semiconductor device includes: a substrate extending in a first direction and a second direction intersecting with the first direction; a plurality of input/output pads disposed at one side of the substrate; a first circuit adjacent to the input/output pads in the first direction; a second circuit disposed to be spaced farther apart from the input/output pads in the first direction than the first circuit; a first memory cell array overlapping the first circuit; a second memory cell array overlapping the second circuit; first metal source patterns overlapping the first memory cell array and being spaced apart from each other in the second direction; and a second metal source pattern overlapping the second memory cell array and formed to have a width wider than a width of each of the first metal source patterns in the second direction.

Abstract: A storage device includes a storage controller that receives a protecting command before a thermal process is performed in the storage device, and that generates a protecting pattern by programming a protecting voltage in a converged region where threshold voltage distributions of memory cells in the storage device converge after the thermal process is performed on the storage device.

Abstract: A controller controls a memory including first and second strings. The first and second strings configure first and second string groups, respectively. In each string group, a set of memory cell transistors each from each string configures a unit. The controller is configured to: sequentially write, in the first string group, data in first units to which serially-coupled memory cell transistors respectively belong; sequentially write, in the second string group, data in first units to which serially-coupled memory cell transistors respectively belong; and sequentially write, in the first string group, data in second units to which serially-coupled memory cell transistors respectively belong.

Abstract: The present disclosure relates to a method and system for tuning a memory device for high-speed transitions. Upon failure of bus sampling tuning of a memory device with default tuning parameters, the host device is configured to transmit an auto-tuning request to the memory device for until one or more pre-defined conditions are satisfied. The memory device is configured to receive the auto-tuning request from the host device, selects a set of tuning parameters from a plurality of sets of tuning parameters, and transmits a tuning block to the host device based on the selected set of tuning parameters, until one or more pre-defined conditions are satisfied. Thereby, the memory device can utilize high-speed mode and high-speed transitions can be achieved between host and memory devices. Thus, initialization failure of the memory device can also be avoided.

Abstract: A non-volatile memory device including a memory cell array including a plurality of cell strings, wherein each cell string of the plurality of cell stings includes a string selection transistor, a plurality of memory cells, and a ground selection transistor connected in series between a bit line and a common source line; and a control circuit configured to perform a program operation on a selected memory cell from among the plurality of memory cells and pre-charge a selected cell string including the selected memory cell in a pre-charge section included in a verification section, wherein the selected cell string is pre-charged as a first pre-charge voltage is applied to a selected bit line connected to the selected memory cell.

Abstract: A system includes a memory cell array including multi-level cells, an input data scramble circuit configured to receive input data and match lower error tolerant bits with higher error tolerant bits to provide matched bit sets, wherein each of the matched bit sets includes at least one lower error tolerant bit and at least one higher error tolerant bit, and a write driver configured to receive the matched bit sets and store each of the matched bit sets into one memory cell of the multi-level cells.

Abstract: The present disclosure provides a method for controlling a 3D NAND memory using a read operation. The method can include increasing a voltage to a plurality of top select gates, with respect to a first reference voltage level, during a pre-pulse period of the read operation prior to a read period of the read operation. The method can also include increasing a voltage to a plurality of word lines, with respect to a second reference voltage level, during the pre-pulse period. The method can also include decreasing a voltage to a bit line, with respect to the first voltage, during the pre-pulse period. The method can also include applying no voltage change to a bottom select gate during the pre-pulse period.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a memory controller configured to cause the nonvolatile memory to execute a first process of reading data based on a first request from a host device. The memory controller is configured to, when the first request is received from the host device while causing the nonvolatile memory to execute a second process, hold interruption of the second process until a first number becomes a first threshold value or more. The first number is a number of the first requests to be performed in the memory controller. The first threshold value is an integer of 2 or more.

Abstract: Embodiments disclosed can include identifying wordline groups where each wordline group is associated with a corresponding default program verify (PV) voltage for each programming level, and determining, for each wordline group, a maximum read window budget (RWB) increase. They can further include defining a target aggregate RWB increase amount based on the maximum RWB increase, and determining, for each wordline group, a minimum number of memory cell programming level groups with corresponding PV voltage offsets sufficient to reach the target aggregate RWB increase amount. The embodiments can also include grouping the programming levels of a specified memory cell into the minimum number of programming level, and applying, based on the specific programming level group containing a target programming level, a corresponding PV voltage offset during a memory cell access operation.

Abstract: A flash memory and an erase method thereof are provided. The flash memory includes at least a memory array and a memory control circuit. The memory control circuit biases plural word lines, a common source line and a global bit line included in the memory array to erase plural memory cells in the flash memory. The method comprises grouping the plural word lines into plural word line groups according to erase depths corresponding to each word line; generating an erase voltage and plural multiple-step word line erase voltages; applying the erase voltage from at least one of the common source line and the global bit line; and during a period when the erase voltage is applied, the plural multiple-step word line erase voltages is respectively applied to the plural word line groups, wherein the plural multiple-step word line erase voltages is one-by-one corresponding to the plural word line groups.

Abstract: A semiconductor device includes a first circuit configured to receive a first signal, and output a first voltage to a first node in accordance with a voltage of the first signal being at a first level and output a second voltage to the first node in accordance with the voltage of the first signal being at a second level, the first voltage being higher than the second voltage. A second circuit is coupled to the first node and is configured to latch data based on a voltage of the first node; and a third circuit is coupled to the first node and is configured to output a third voltage to the first node while the first circuit is outputting the first voltage to the first node, and to output a fourth voltage to the first node while the first circuit is outputting the second voltage to the first node, the third voltage being lower than the first voltage, and the fourth voltage being higher than the second voltage.

Abstract: A memory device includes a memory array comprising a plurality of wordlines, and control logic, operatively coupled with the memory array. The control logic causes a measurement programming pulse to be sequentially applied to each of the plurality of wordlines of the memory array and determines respective threshold voltages stored in a number of memory cells associated with each of the plurality of wordlines. The control logic further determines a difference in the respective threshold voltages based on a location of the number of memory cells within each wordline and determines a respective resistance-capacitance (RC) time constant for each of the plurality of wordlines in view of the difference in the respective threshold voltages.

Abstract: An access request is received. The access request comprises a physical page address corresponding to a primary memory block of a memory device, an input security key, and a logical page address corresponding to the physical page address. The input security key is provided as input to a (CAM) block that stores a plurality of security keys to verify that the input security key matches a stored security key. A location of the stored security key is checked to verify that it corresponds to the logical page address included in the access request based a predetermined mapping. Based on verifying that the stored security key corresponds to the logical page address included in the access request, the physical page address corresponding to the primary memory block is accessed.

Abstract: A non-volatile memory and a programming method thereof are provided. The programming method of the non-volatile memory includes the following steps. A coarse programming procedure is performed for programing all of a plurality of memory cells at an erase state to 2{circumflex over (?)}N?1 or 2{circumflex over (?)}N program states. N is a positive integer. A fine programming procedure is performed for pushing all of memory cells into 2{circumflex over (?)}N?1 or 2{circumflex over (?)}N verify levels.

Abstract: Disclosed is an operation method of a controller which is configured to control a nonvolatile memory device. The method includes receiving cell counting data associated with selected memory cells included in the nonvolatile memory device from the nonvolatile memory device, adjusting operation parameters of the nonvolatile memory device based on the cell counting data, performing a valley search operation for the selected memory cells based on the adjusted operation parameters, and performing a read operation for the selected memory cells based on a result of the valley search operation.

Abstract: A memory chip includes a first decoding device and a memory device. The first decoding device is configured to generate multiple word line signals. The memory device is configured to generate a third data signal based on a first data signal and a second data signal. The memory device includes a first memory circuit and a second memory circuit. The first memory circuit is configured to generate the first data signal at a first node according to the word line signals during a first period. The second memory circuit is configured to generate the second data signal at a second node different from the first node according to the word line signals during a second period after the first period. A method of operating a memory chip is also disclosed herein.

Abstract: A memory system includes a memory device and a processing device, operatively coupled to the memory device. The processing device performs operations comprising: identifying one or more mandatory scan wordlines of the memory device and one or more remaining wordlines of the memory device; performing a plurality of scan iterations with respect to a plurality of pages of the memory device, such that performing each scan iteration comprises: identifying, among the remaining wordlines, one or more scheduled scan wordlines of the memory device, scanning a subset of pages of the memory device that are addressable by the mandatory scan wordlines and the scheduled scan wordlines; wherein a combination of a first plurality of pages addressable by the scheduled scan wordlines selected by the plurality of scan iterations and a second plurality of pages addressable by the mandatory wordlines comprises the plurality of pages of the memory device.

Abstract: Three-dimensional memories are provided. A three-dimensional memory includes a memory cell array, a first interconnect structure, a bit line decoder and a second interconnect structure. The bit line decoder is formed under the memory cell array and the first interconnect structure. The memory cell array includes a plurality of memory cells formed in a plurality of levels stacked in a first direction. The first interconnect structure includes at least one bit line extending in a second direction that is perpendicular to the first direction. The bit line includes a plurality of sub-bit lines stacked in the first direction. Each of the sub-bit lines is coupled to the memory cells that are arranged in a line in the corresponding level of the memory cell array. The second interconnect structure is configured to connect the bit line to the bit line decoder passing through the first interconnect structure.

Abstract: A nonvolatile semiconductor storage device includes first and second semiconductor layers extending in a first direction and spaced apart in a second direction, first and second bit lines extending in the second direction and respectively arranged on opposite sides of the semiconductor layers in the first direction, first and second source lines extending in a third direction and respectively arranged on opposite sides of the semiconductor layers in the first direction, a first memory string including first and second select transistors connected to the first bit line and the first source line, respectively, a second memory string including third and fourth select transistors connected to the second bit line and the second source line, respectively, a first select gate line connected to gates of the first and fourth select transistors, and a second select gate line connected to gates of the second and third select transistors.

Abstract: Various embodiments of tandem row decoders are disclosed. Each embodiment of a tandem row decoder comprises a word line decoder and a control gate decoder. The tandem row decoder exhibits reduced leakage current on the word line and the control gate line when the tandem row decoder is not enabled.

Abstract: An apparatus includes a control circuit configured to connect to memory cells connected in series in NAND strings. Each NAND string includes a plurality of data memory cells coupled to a plurality of data word lines in series with a plurality of dummy memory cells connected to a plurality of dummy word lines. The control circuit configured to apply a first dummy word line voltage to one or more dummy word lines of the plurality of dummy word lines in a verify step of a program operation to program data memory cells. The control circuit is configured to apply a second dummy word line voltage to the one or more dummy word lines in a read operation to read the data memory cells.

Abstract: A variety of applications can include memory devices designed to provide stabilization of selector devices in a memory array of the memory device. A selector stabilizer pulse can be applied to a selector device of a string of the memory array and to a memory cell of multiple memory cells of the string with the memory cell being adjacent to the selector device in the string. The selector stabilizer pulse can be applied directly following an erase operation to the string to stabilize the threshold voltage of the selector device. The selector stabilizer pulse can be applied as part of the erase algorithm of the memory device. Additional devices, systems, and methods are discussed.

Abstract: The present disclosure relates to a method for accessing memory cells comprising: applying an increasing read voltage with a first polarity to the plurality of memory cells; counting a number of switching memory cells in the plurality based on the applying the increasing read voltage; applying a first read voltage with the first polarity based on the number of switched memory cells reaching a threshold number; applying a second read voltage with a second polarity opposite to the first polarity; and determining that a memory cell in the plurality of memory cells has a first logic value based on the memory cell having switched during one of the applying the increasing read voltage and the applying the first read voltage or based on the memory cell not having switched during the applying the second read voltage. A related system is also disclosed.

Abstract: A multiplier-accumulator accepts A and B digital inputs and generates a dot product P by applying the bits of the A input and the bits of the B inputs to unit elements comprised of groups of AND gates coupled to charge transfer lines through a capacitor Cu. The number of bits in the B input is a number of AND-groups and the number of bits in A is the number of AND gates in an AND-group. Each unit element receives one bit of the B input applied to all of the AND gates of the unit element, and each unit element having the bits of A applied to each associated AND gate input of each unit element. The AND gates are coupled to charge transfer lines through a capacitor Cu, and the charge transfer lines couple to binary weighted charge summing capacitors which sum and scale the charges from the charge transfer lines, the charge coupled to an analog to digital converter which forms the dot product output. The charge transfer lines may span multiple unit elements.

Abstract: Technology for applying a positive temperature coefficient (Tco) voltage to a control terminal of a dummy select transistor. The dummy select transistor resides on a NAND string having non-volatile memory cells and a regular select transistor. The dummy select transistor is typically ON (or conductive) during memory operations such as selected string program, read, and verify. In an aspect, the positive Tco voltage is applied to the control terminal of a dummy select transistor during a program operation. Applying the positive Tco voltage during program operations reduces or eliminates program disturb to the dummy select transistor. In some aspects, the dummy select transistor is used to generate a gate induced drain leakage (GIDL) current during an erase operation. In some aspects, the dummy select transistor is a depletion mode transistor.

Abstract: A read operation on selected memory cells may be performed by a method of operating a semiconductor memory device. The method may include determining a read voltage to be used in the read operation among first to 2N?1-th read voltages, applying the determined read voltage to a selected word line connected to the selected memory cells, and applying a read pass voltage to unselected word lines based on whether the determined read voltage is a first read voltage. Here, N may be a natural number of 2 or more.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes apparatus including memory cells connected to word lines including at least one dummy word line and data word lines. The memory cells are arranged in strings and are configured to retain a threshold voltage. The apparatus also includes a control means coupled to the word lines and the strings and configured to identify ones of the memory cells connected to the at least one dummy word line with the threshold voltage being below a predetermined detection voltage threshold following an erase operation. The control means is also configured to selectively apply at least one programming pulse of a maintenance program voltage to the at least one dummy word line to program the ones of the memory cells connected to the at least one dummy word line having the threshold voltage being below the predetermined detection voltage threshold.

Abstract: A memory die includes an alternating stack of insulating layers and electrically conductive layers through which memory opening fill structures vertically extend. The memory die includes at least three memory array regions interlaced with at least two contact regions, or at least three contact regions interlaced with at least two memory array regions in the same memory plane. A logic die including at least two word line driver regions can be bonded to the memory die. The interlacing of the contact regions and the memory array regions can reduce lateral offset of boundaries of the word line driver regions from boundaries of the contact regions.

Abstract: A semiconductor storage device includes first and second chips. The first chip includes a first semiconductor substrate, first conductive layers arranged in a first direction and extending in a second direction, a semiconductor column extending in the first direction and facing the first conductive layers, a first charge storage film formed between the first conductive layers and the semiconductor column, a plurality of first transistors on the first semiconductor substrate, and first bonding electrodes electrically connected to a portion of the plurality of first transistors. The second chip includes a second semiconductor substrate, a plurality of second transistors on the second semiconductor substrate, and second bonding electrodes electrically connected to a portion of the plurality of second transistors, and bonded to the first bonding electrodes.

Abstract: Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a substrate, a first deck including first memory cell strings located over the substrate, a second deck including second memory cell strings and located over the first deck, first data lines located between the first and second decks and coupled to the first memory cell strings, second data lines located over the second deck and coupled to the second memory cell strings, and first and second circuitries. The first and second data lines extending in a direction from a first portion of the substrate to a second portion of the substrate. The first buffer circuitry is located in the first portion of the substrate under the first memory cell strings of the first deck and coupled to the first data lines. The second buffer circuitry is located in the second portion of the substrate under the first memory cell strings of the first deck and coupled to the second data lines.

Abstract: The present disclosure relates to a three-dimensional memory (3D) and a control method thereof. The 3D memory includes a first deck and a second deck which are stacked in a vertical direction of a substrate. The first deck and the second deck each includes a plurality of memory string. Each memory string includes a plurality of memory cells. The plurality of memory cells includes a first portion and a second portion. A diameter of channel structure corresponding to the first portion of memory cells is smaller than that of channel structure corresponding to the second portion of memory cells. The method includes performing a read operation for selected memory cells that are in at least one of the first deck or the second deck; and applying a pass voltage to non-selected memory cells other than the selected memory cells in the first deck and the second deck. A first pass voltage is lower than a second pass voltage.

Abstract: In order to inhibit memory cells from programming and mitigate program disturb, the memory pre-charges channels of NAND strings connected to a common set of control lines by applying positive voltages to the control lines and applying voltages to a source line and bit lines connected to the NAND strings. The control lines include word lines and select lines. The word lines include an edge word line. The memory ramps down the positive voltages applied to the control lines, including ramping down control lines on a first side of the edge word line, ramping down the edge word line, and performing a staggered ramp down of three or more control lines on a second side of the edge word line. After the pre-charging, unselected NAND strings have their channel boosted to prevent programming and selected NAND strings experience programming on selected memory cells.

Abstract: A multiphase programming scheme for programming a plurality of memory cells of a data storage system includes a first programming phase in which a first set of voltage distributions of the plurality of memory cells is programmed by applying a first plurality of program pulses to word lines of the plurality of memory cells, and a second programming phase in which a second set of voltage distributions is programmed by applying a second plurality of program pulses to the word lines of the plurality of memory cells. The second programming phase includes maintaining a margin of separation between two adjacent voltage distributions of the second set of voltage distributions after each of the second plurality of program pulses. This scheme achieves better margin using an aggressive quick pass approach, which helps with data recovery in case of power loss events.

Abstract: A method for operating a memory is disclosed. The memory includes a first group of word lines, a second group of word lines, a first dummy word line, and a second dummy word line. The first dummy word line and the second dummy word line are between the first group of word lines and the second group of word lines. A first pass voltage is applied to the first dummy word line and applying a second pass voltage to the second dummy word line. A program voltage is applied to a selected word line, wherein a condition is met: a first voltage difference between the first pass voltage and a first threshold voltage of a first dummy cell corresponding to the first dummy word line is different from a second voltage difference between the second pass voltage and a second threshold voltage of a second dummy cell corresponding to the second dummy word line.

Abstract: A trigger condition associated with latent read disturb in a memory device is detected. In response to detecting the trigger condition associated with latent read disturb, one or more blocks in the memory device that are impacted by the trigger condition are placed in a stable state to mitigate latent read disturb in the one or more blocks.

Abstract: The present disclosure generally relates to improved foggy-fine programming. Rather than initially writing to SLC and then later performing a foggy write to QLC with the data read from SLC and then a fine write to QLC with data re-read from SLC, the foggy write to QLC can be performed in parallel to the initial writing to SLC using the same buffer. Once the foggy write to QLC has completed, and the writing to SLC has also completed, the data buffer can be released. The data written in SLC is then be read from SLC and passes through a relocation buffer for the first and only time to then be written using fine programming to QLC. Thus, the data only passes through the relocation buffer one time and the relocation buffer can be freed to usage after only one pass of the data therethrough.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of first interconnect layers, first and second memory pillars, and a plurality of first plugs. The plurality of first interconnect layers include a first array region where the first memory pillar penetrates the plurality of first interconnect layers, a second array region where the second memory pillar penetrates the plurality of first interconnect layers, and a coupling region where a plurality of coupling parts respectively coupled to the plurality of first plugs are formed. Along a first direction parallel to the semiconductor substrate, the first array region, the coupling region, and the second array region are arranged in order.

Abstract: A semiconductor storage device includes: a substrate layer; and a stacked body that is provided on the substrate layer. The semiconductor storage device includes a columnar portion that includes a semiconductor body extending within the stacked body in a stacking direction. The semiconductor storage device includes: an insulating layer provided on the plurality of terrace portions; and a plurality of columnar bodies extending in a first direction and provided within the insulating layer. The semiconductor storage device includes slit portions that split the stacked body into a plurality of string units. Each of the columnar bodies adjacent to each of the slit portions has a core film, the semiconductor body, a tunnel insulating film, and a block insulating film formed in sequence from a shaft center side to an outer periphery side of the columnar body, and the columnar body does not have the charge storage portion.