Abstract: A memory device includes: a plurality of memory cells grouped into a plurality of planes; page buffer groups corresponding to respective ones of the plurality of planes, the page buffer groups including a plurality of page buffer circuits, each of the plurality of page buffer circuits including cache latches which are configured to receive data to be stored in memory cells in the plurality of planes; and control logic for controlling the page buffer groups to simultaneously initialize cache latches corresponding to at least two planes, among the cache latches, in response to a multi-plane program command, wherein the multi-plane program command instructs a multi-plane program operation of simultaneously storing data in plural planes among the plurality of planes.

Abstract: A method for conducting a read-verification operation on a target memory cell in a three-dimensional (3D) memory device includes removing fast charges of the target memory cell at a read-prepare step and measuring a threshold voltage of the target memory cell at a sensing step. Removing the fast charges of the target memory cell includes applying a prepare voltage (Vprepare) on an unselected top select gate (Unsel_TSG) of an unselected memory string, applying a first off voltage (Voff) on a selected word line (Sel_WL) associated with the target memory cell, and applying a pass voltage (Vpass) on an unselected word line (Unsel_WL).

Abstract: A sensitive amplifier and a storage device are provided, and the sensitive amplifier includes: a voltage clamp circuit which provides a stable reading voltage for the storage unit; a power switch circuit which cuts off power supply for the voltage clamp circuit when the voltage clamp circuit is not operating; a discharge circuit which discharges the voltage clamp circuit before the voltage clamp circuit operates; a pre-charge circuit which pre-charges the voltage clamp circuit when the voltage clamp circuit starts operating; and a current comparison circuit which is connected to an output of the voltage clamp circuit, compares the reading current with a reference current, and outputs a comparison result.

Abstract: A semiconductor memory device includes a memory block with string units including a plurality of memory strings of memory cell transistors connected in series. Word lines are connected memory cell transistors in a same row and bit lines are respectively connected to one of the memory strings in each string unit. The bit lines are divided into different groups. A control circuit performs erasing on of the memory cell transistors in the memory block. The control circuit executes the erase verification on only a subset of memory strings in each string unit of the memory block rather than all memory strings.

Abstract: A non-volatile memory device receives a read command and an address from a controller, and performs a data recovery read operation in response to the read command. In the data recovery read operation, an operation of obtaining aggressor group information from a memory cell connected to a word line adjacent to a word line selected according to the address, and an operation of recovering data corresponding to the obtained aggressor group information in a memory cell connected to the word line selected according to the address, are repeatedly performed on each of a plurality of aggressor groups.

Abstract: In certain aspects, a memory device includes an array of memory cells including a plurality of rows of memory cells, a plurality of word lines respectively coupled to the plurality of rows of memory cells, and a peripheral circuit coupled to the plurality of word lines and configured to perform an erase operation on a selected row of memory cells of the plurality of rows of memory cells. The selected row of memory cells is coupled to a selected word line. To perform the erase operation, the peripheral circuit is configured to discharge an unselected word line coupled to an unselected row of memory cells of the plurality of rows of memory cells from an initial voltage to a discharge voltage in a first time period, and float the unselected word line in a second time period after the first time period.

Abstract: Methods, systems, and devices related to signal development caching in a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). In various examples, accessing the memory device may include accessing information from the signal development cache, or the memory array, or both, based on various mappings or operations of the memory device.

Abstract: Implementations of the present disclosure provide 3D memory devices and methods for operating the 3D memory devices. In an example, a 3D memory device includes a plurality of memory layers and a dummy memory layer between the plurality of memory layers and a NAND memory string extending through the memory layers and the dummy memory layer. The NAND memory string includes a source, a drain, and a plurality of memory cells at intersections with the plurality of memory layers and between the source and the drain. The 3D memory device also includes a peripheral circuit configured to erase the plurality of memory cells. To erase the plurality of memory cells, the peripheral circuit includes a word line driving circuit configured to apply a positive bias voltage on the dummy memory layer.

Abstract: A non-volatile memory includes a plurality of blocks and a controller. Each of the plurality of blocks includes a plurality of pages, and each of the plurality of pages includes a plurality of storage units. The controller is configured to perform: receiving an erase command for a target block of the plurality of blocks; executing a read operation on each page of the target block; and executing a first erase operation to apply word line voltages to the plurality of pages, where the word line voltages are determined by a read result of the read operation of each page. An operation method of a non-volatile memory and an electronic device are also provided.

Abstract: A semiconductor memory device comprises a first word line coupled to first and second memory cell transistors, first and second bit lines, and a controller. In a first program loop, a controller applies a first voltage to first and second bit lines in a program operation, and classifies the first and second memory cell transistors into first and second groups by applying a first verify voltage to the first word line in a verify operation. In a program operation of each of program loops that are executed after the first program loop, the controller applies the first voltage to the first bit line when a verification of the first memory cell transistor has not been passed, and applies a second voltage to the second bit line when a verification of the second memory cell transistor has not been passed.

Abstract: A multi-layer vector-matrix multiplication (VMM) apparatus is provided. The multi-layer VMM apparatus includes a three-dimensional (3D) NAND flash structure having multiple transistor array layers each includes a number of transistors configured to store a respective weight matrix and a number of word lines configured to receive respective selection voltages corresponding to a respective input vector. Accordingly, each of the transistor array layers can perform a respective VMM operation by multiplying the respective selection voltages with the respective weight matrix. Thus, by providing the respective selection voltages to each of the multiple transistor array layers in a sequential order, it may be possible to carry out a multi-layer VMM operation in the 3D NAND flash structure with reduced footprint, thus making it possible to support a deep neural network (DNN) via such advanced techniques as in-memory computing.

Abstract: Embodiments of structures and methods for forming three-dimensional (3D) memory devices are provided. In an example, a 3D memory device includes a core region and a staircase region. The staircase region includes a plurality of stairs each has at least a conductor/dielectric pair extending in a lateral direction. The staircase region includes a drain-select-gate (DSG) cut structure extending along the lateral direction and a vertical direction, and a plurality of support structures extending in the DSG structure along the vertical direction. Of at least one of the support structures, a dimension along the lateral direction is greater than a dimension along a second lateral direction perpendicular to the lateral direction.

Abstract: A variety of applications can include memory devices designed to provide stabilization of selector devices in a memory array of the memory device. A selector stabilizer pulse can be applied to a selector device of a string of the memory array and to a memory cell of multiple memory cells of the string with the memory cell being adjacent to the selector device in the string. The selector stabilizer pulse can be applied directly following an erase operation to the string to stabilize the threshold voltage of the selector device. The selector stabilizer pulse can be applied as part of the erase algorithm of the memory device. Additional devices, systems, and methods are discussed.

Abstract: A semiconductor storage device includes memory cells, select transistors, memory strings, first and second blocks, word lines, and select gate lines. In the memory string, the current paths of plural memory cells are connected in series. When data are written in a first block, after a select gate line connected to the gate of a select transistor of one of the memory strings in the first block is selected, the data are sequentially written in the memory cells in the memory string connected to the selected select gate line. When data are written in the second block, after a word line connected to the control gates of memory cells of different memory strings in the second block is selected, the data are sequentially written in the memory cells of the different memory strings in the second block which have their control gates connected to the selected word line.

Abstract: A memory circuit includes a memory array and a control circuit. A first column of the memory array includes a select line, first and second bit lines, a first subset of memory cells coupled to the select line and the first bit line, and a second subset of memory cells coupled to the select line and the second bit line. The control circuit is configured to simultaneously activate each of the select line and the first bit line and, during a period in which the select line and first bit line are simultaneously activated, activate a first plurality of word lines, each word line of the first plurality of word lines being coupled to a memory cell of the first subset of memory cells.

Abstract: A method of operating a nonvolatile memory device which includes at least one memory block is provided. The method includes providing a plurality of word-lines with a voltage during a word-line set-up period, precharging a plurality of driving lines with a voltage during a word-line development period, detecting a voltage drop of a sensing node during a sensing period, and detecting leakage based on the voltage drop.

Abstract: A multi-chip package with reduced calibration time and an impedance control (ZQ) calibration method thereof are provided. A master chip of the multi-chip package performs a first ZQ calibration operation by using a ZQ resistor, and then, the other slave chips simultaneously perform second ZQ calibration operations with respect to data input/output (DQ) pads of the slave chips by using a termination resistance value of a DQ pad of the master chip on the basis of a one-to-one correspondence relationship with the DQ pad of the master chip. The multi-chip package completes ZQ calibration by performing two ZQ calibration operations, thereby decreasing a ZQ calibration time.

Abstract: An apparatus that includes a word line with a plurality of memory cells that are able to be programmed to a plurality of data states is provided. The apparatus further includes a programming circuit. The programming circuit is configured to program the memory cells and count the number of verify pulses at a first verify voltage level that are performed during programming of the memory cells to a first programmed data state to determine a verify count. During programming to a second data state, the programming circuit applies a plurality of programming pulses at increasing voltage levels and a plurality of verify pulses at a second verify voltage level to the selected word line. During programming of the memory cells to the second programmed data state, the number of verify pulses is one fewer than the number of programming pulses and bitscan operations are skipped.

Abstract: Provided herein may be a semiconductor memory device. The semiconductor memory device may include a memory cell array, a peripheral circuit, and control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit performs a read operation on the memory cells. The control logic controls the read operation of the peripheral circuit. During the read operation, the control logic controls the peripheral circuit so that a read voltage is applied to a selected word line among a plurality of word lines coupled to the memory cells, a first pass voltage is applied to an unselected word line disposed adjacent to the selected word line and a second pass voltage is applied to an unselected word line that is not disposed adjacent thereto. The peripheral circuit adjusts a magnitude of the first or second pass voltage based on a temperature of the semiconductor memory device.

Abstract: A semiconductor memory device, and a method of operation, include: a memory block coupled with a plurality of word lines and a plurality of bit lines; a peripheral circuit configured to perform a program operation and a read operation on the memory block; and control logic configured to control the peripheral circuit such that a word line overdrive period overlaps with a bit line overdrive period in a bit line precharge operation during at least one of the program operation and the read operation.

Abstract: Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a substrate, a first deck including first memory cell strings located over the substrate, a second deck including second memory cell strings and located over the first deck, first data lines located between the first and second decks and coupled to the first memory cell strings, second data lines located over the second deck and coupled to the second memory cell strings, and first and second circuitries. The first and second data lines extending in a direction from a first portion of the substrate to a second portion of the substrate. The first buffer circuitry is located in the first portion of the substrate under the first memory cell strings of the first deck and coupled to the first data lines. The second buffer circuitry is located in the second portion of the substrate under the first memory cell strings of the first deck and coupled to the second data lines.

Abstract: A memory device includes a bit line, a source line, a plurality of word lines, and a memory cell. The memory cell includes a plurality of memory strings coupled in parallel between the bit line and the source line. Each of the plurality of memory strings includes a plurality of memory elements coupled in series between the bit line and the source line, and electrically coupled correspondingly to the plurality of word lines.

Abstract: A semiconductor storage device includes: a first memory cell and a second memory cell that are adjacent to each other and connected to each other in series; a first word line connected to the first memory cell; a second word line connected to the second memory cell; and a control circuit. The control circuit is configured to, in a first read operation to read a first bit stored in the first memory cell, apply a first voltage to the first word line, and then, apply a first read voltage lower than the first voltage, to the first word line, and apply a second voltage to the second word line, and then, apply a third voltage lower than the second voltage and higher than the first voltage, to the second word line. The third voltage is applied to the second word line after the first read voltage is applied to the first word line.

Abstract: According to an embodiment, a semiconductor memory device comprises: a semiconductor substrate; a memory cell array configured having a plurality of memory units, each of the memory units including a plurality of memory cells connected in series, the plurality of memory cells being stacked, the plurality of memory units involving a first memory unit and a second memory unit; and a plurality of bit lines connected to ends of each of the memory units in the memory cell array. The first memory unit and the second memory unit are arranged in a staggered manner by the first memory unit being displaced in a row direction with respect to the second memory unit by an amount less than an arrangement pitch in a row direction of the first memory unit or the second memory unit.

Abstract: Aspects of the disclosure provide a method for data erase in a memory device. The method includes providing first erase carriers from a body portion for the memory cell string, during an erase operation in a memory cell string. The first erase carriers flow in a first direction from a source side of the memory cell string to a drain side of the memory cell string. Further, the method includes providing second erase carriers from a junction at the drain side of the memory cell string. The second erase carriers flow in a second direction from the drain side of the memory cell string to the source side of the memory cell string. Then, the method includes injecting the first erase carriers and the second erase carriers to charge storage portions of the memory cells in the memory cell string.

Abstract: A memory apparatus and method of operation is provided. The apparatus includes a block of memory cells. Each of the memory cells is connected to one of a plurality of word lines and arranged in strings. Each of the memory cells is also configured to retain a threshold voltage corresponding to one of a plurality of data states and be erased in an erase operation. A control circuit is coupled to the word lines and the strings and is configured to identify ones of the strings having a faster relative erase speed compared to others of the strings. During the erase operation, the control circuit raises the threshold voltage of the memory cells associated with the ones of the strings having the faster relative erase speed while not raising the threshold voltage of the memory cells associated with the others of the strings.

Abstract: Methods, systems, and apparatuses for memory devices (e.g., DRAM) including one or more reserved rows for row-copy operations are described. Such a memory device may include a memory array having a set of rows, where one or more rows of the set are reserved for row-copy operations and hidden (un-addressable) from access commands directed to the memory array. The reserved rows may include a dummy row configured to provide a uniform processing conditions to the memory array. Additionally, or alternatively, the reserved rows may include a buffer row configured to provide a buffer zone in the memory array. In some embodiments, the memory device may perform the row-copy operations in response to detecting row hammering activities. The row-copy operations may mitigate the risks associated with the row hammering activities by routing the row hammering activities to the reserved rows.

Abstract: A method used in forming a memory array comprising strings of memory cells and operative through-array-vias (TAVs) comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. The stack comprises a TAV region and an operative memory-cell-string region. The TAV region comprises spaced operative TAV areas. Operative channel-material strings are formed in the stack in the operative memory-cell-string region and dummy channel-material strings are formed in the stack in the TAV region laterally outside of and not within the operative TAV areas. Operative TAVs are formed in individual of the spaced operative TAV areas in the TAV region. Other methods and structure independent of method are disclosed.

Abstract: Provided herein may be a memory device having improved overshoot management performance, and a method of operating the memory device. The method may include: applying a select voltage to a select line coupled in common to respective select transistors in a plurality of cell strings; and applying a program voltage to a selected word line coupled in common to selected memory cells among a plurality of memory cells in the plurality of cell strings. The applying of the select voltage may include applying a first select voltage to the select line during a first time period. The applying of the program voltage may include applying, to the select line, a second select voltage having a voltage level higher than a voltage level of the first select voltage.

Abstract: An erasing method is used in a memory device. The memory device includes a string of memory cells and a controller, the string of memory cells including a plurality of special memory cells not for storing data and a plurality of main memory cells for storing data. The erasing method includes: the controller verifying if at least one special memory cell of the plurality of special memory cells has failed; the controller resetting the at least one special memory cell if the at least one special memory cell has failed; and the controller erasing the plurality of main memory cells.

Abstract: A semiconductor memory apparatus may include a cell string and a page buffer. The cell string may include a drain select transistor coupled with a bit line, and memory cells coupled with the drain select transistor. The page buffer may be coupled to the cell string through the bit line. The page buffer may include a latch and a first current path. The latch may store data of a value indicative of a result of a threshold voltage verification on the drain select transistor. The first current path may set a voltage of the bit line to a program inhibit voltage, based on the value of the data stored in the latch.

Abstract: Apparatuses are described that include stacked arrays of memory cell strings and their methods of operation. Apparatuses include architectures that reduce the use of several common components, allowing greater device density and smaller device size for a given semiconductor area.

Abstract: A semiconductor device includes a first chip and a second chip. The first chip includes a first circuit having a first output terminal. The second chip includes a second circuit having a second output terminal, which is electrically connected to the first output terminal via a first signal line. When the first chip and the second chip receive a first command, the second circuit calibrates an output impedance at the second output terminal through a first calibration operation based on an output impedance at the first output terminal.

Abstract: A semiconductor device includes: a substrate extending in a first direction and a second direction intersecting with the first direction; a plurality of input/output pads disposed at one side of the substrate; a first circuit adjacent to the input/output pads in the first direction; a second circuit disposed to be spaced farther apart from the input/output pads in the first direction than the first circuit; a first memory cell array overlapping the first circuit; a second memory cell array overlapping the second circuit; first metal source patterns overlapping the first memory cell array and being spaced apart from each other in the second direction; and a second metal source pattern overlapping the second memory cell array and formed to have a width wider than a width of each of the first metal source patterns in the second direction.

Abstract: A program method of a non-volatile memory device, the non-volatile memory device including a cell string having memory cells stacked perpendicular to a surface of a substrate, the method includes performing a first program phase including programming a first memory cell connected to a first word line and applying a first pass voltage to other word lines above or below the first word line, and performing a second program phase including programming a second memory cell after the first memory cell is completely programmed, the second memory cell being connected to a second word line closer to the substrate than the first word line, applying a second pass voltage to a first word line group below the second word line and applying a third pass voltage to a second word line group above the second word line, the second pass voltage being lower than the third pass voltage.

Abstract: A memory device may include: a control circuit comprising a first verification component suitable for counting the number of memory cells in the selected word line having an excessively high threshold voltage as excessive memory cells, after a program operation is completed; and a second verification component suitable for counting the number of failed bits when the number of excessive memory cells counted is greater than or equal to an excess threshold value, and suitable for outputting a pass or fail signal for the program operation according to the count of at least one of the first verification component and the second verification component.

Abstract: A semiconductor memory device including a substrate; an array of memory cells arranged in rows and columns on the substrate, each memory cell comprising a vertical pillar-shaped active region having upper and lower source/drain regions and a channel region, and a gate stack formed around the channel region; a plurality of bit lines on the substrate, each bit line located below a column of memory cells and electrically connected to the lower source/drain regions of the memory cells; and a plurality of word lines on the substrate, each word line extending in a row direction and connected to gate conductors of the memory cells in a row of memory cells, each word line comprising first portions extending along peripheries of the memory cells and second portions extending between the first portions, the first portions of the word line extending in a conformal manner with sidewalls of the upper source/drain regions.

Abstract: A first-tier structure includes a first vertically alternating sequence of first continuous insulating layers and first continuous sacrificial material layers and a first-tier retro-stepped dielectric material portion overlying first stepped surfaces of the first vertically alternating sequence. A second vertically alternating sequence of second continuous insulating layers and second continuous sacrificial material layers is formed over the first-tier structure. A vertically alternating stack of insulating plates and dielectric material is formed over the first-tier retro-stepped dielectric material portion. Alternatively, dielectric pillar structures may be formed in lieu of the vertically alternating stack. After formation of memory stack structures, electrically conductive layers replace portions of the first and second continuous sacrificial material layers.

Abstract: Multiple apparatus and methods of the specification include a method that includes precharging channel material of a string of memory cells in an unselected sub-block of a block of memory cells to a precharge voltage during a first portion of a programming operation. A programming voltage can then be applied to a selected memory cell in a selected sub-block of the block of memory cells during a second portion of the programming operation. The selected memory cell is coupled to a same access line as an unselected memory cell in the unselected sub-block.

Abstract: Apparatuses and methods for performing buffer operations in memory are provided. An example apparatus can include an array of memory cells, a page buffer, and a controller. The page buffer can be configured to store a number of pages of data in respective caches of the page buffer. The controller can be configured to program the number of pages of data to a first group of cells in the array. The programming operation can include programming the first group of cells to target states encoded with respective data patterns. The programming operation can include incrementally releasing a first of the respective caches of the page buffer responsive to completing programming of cells programmed to a particular first one of the target states.

Abstract: Provided herein is a memory device and a method of operating the same. The memory device may include a plurality of memory cells, a peripheral circuit, and a control logic. The peripheral circuit may be configured to perform a plurality of program loops, each including a program pulse apply operation and a program verify operation, on selected memory cells of the plurality of memory cells. The control logic may be configured to control, in response to a suspend command, the peripheral circuit to suspend an n-th program loop of the plurality of program loops, where n is a natural number of 1 or more, and configured to control, in response to a resume command, the peripheral circuit to resume the suspended n-th program loop after performing a recovery pulse apply operation compensating for charges detrapped from a channel area of the selected memory cells.

Abstract: Apparatuses and techniques are described for optimizing a program operation in a memory device in which groups of memory cells are programmed from checkpoint states to respective data states. In a first program pass, groups of memory cells are programmed to respective checkpoint states with verify tests. Each checkpoint state is associated with a set of data states. In a second program pass, the memory cells are programmed closer to their assigned data state with a specified number of program pulses. In a third program pass, the memory cells are programmed to their assigned data state by applying program pulses and performing verify tests. The number of checkpoint states and the number of data states associated with each checkpoint state can be optimized based on a spacing between the verify voltages of the data states.

Abstract: In an embodiment, the column decoder of a PCM device is divided into two portions that can be governed independently of one another, and the driving signals of the two portions are configured so as to guarantee comparable capacitive loads at the two inputs of a sense amplifier in both of the operations of single-ended reading and double-ended reading. In particular, during single-ended reading, the sense amplifier has a first input that receives a capacitive load corresponding to the direct memory cell selected, and a second input that receives a capacitive load associated to a non-selected complementary memory cell.

Abstract: Aspects of a storage device including a memory and a controller are provided which allow for reduction of current during program operations using pre-charge timing control based on an inhibit bit line count acquired from data latches. When the inhibit bit line count is within a bit line count range, the controller pre-charges bit lines in memory during a first time period to a first target voltage, and when the inhibit bit line count is outside the bit line count range, the controller pre-charges the bit lines during a second, earlier time period to a second, smaller target voltage. The controller is thus configured to reduce current and minimize operation overlaps in the earlier time period during the middle of the program operation where current is highest. Thus, a balance in power consumption and performance may be achieved during program operations using timing control.

Abstract: The memory device includes a memory block, a voltage generator, a pass switch group connecting or blocking the global lines and the local lines to each other or from each other in response to a block selection voltage, a decoder, and a logic circuit configured to control the decoder and the voltage generator so that the local lines are floated after initializing a channel of the strings and a voltage of the global lines is lower than a voltage of the global lines when initializing the channel of the strings, when a program operation of selected memory cells included in a selected page of the memory block is completed, the channels of the strings are initialized and the local lines are floated.

Abstract: A semiconductor memory device according to an embodiment includes a string, a bit line, a well line, and a sequencer. The string includes first and second select transistors, and memory cell transistors using a ferroelectric material. The bit line and the well line are connected to the first and second select transistors, respectively. At a time in an erase verify operation, the sequencer is configured to apply a first voltage to the memory cell transistors, to apply a second voltage lower than the first voltage to the first select transistor, to apply a third voltage lower than the first voltage to the second select transistor, to apply a fourth voltage to the bit line, and to apply a fifth voltage higher than the fourth voltage to the well line.

Abstract: A method comprises determining a verify voltage for a next iteration of a verify operation to be performed on memory cells a first set of memory cells of a selected word line, and determining data states for a second set of memory cells of at least one neighboring word line. The method further comprises determining, based on the data states, a verify voltage configuration that includes bit line voltage biases or sense times, and performing the next iteration of the verify operation on the selected word line by using the verify voltage configuration to iteratively verify whether respective memory cells, of the second set of memory cells, have threshold voltages above the verify voltage, wherein determining the data states, determining the verify voltage configuration, and performing the next iteration are to be repeated until a program stop condition is satisfied.

Abstract: The present disclosure provides a dynamic random access memory (DRAM) and method for controlling the DRAM. The DRAM has a first operation mode and a second operation mode. The DRAM includes a control module and a connecting module. The connecting module includes an input/output (I/O) pad and a determining circuit. The I/O pad is configured to receive a first input signal. The determining circuit includes a detector and a first determining unit. The detector is configured to compare the first input signal to a reference signal so as to generate a first signal. The first determining unit is configured to receive the first signal and generate a first output signal according to the first signal. The control module is configured to control the DRAM being operated under the first operation mode or the second operation mode according to the first output signal.

Abstract: A memory device may include: a memory cell array including a plurality of planes; and a voltage generation circuit including a master pump component and at least one or more sub-pump components that respectively correspond to the planes. During an interleaved operation, the master pump component may generate a first output voltage in response to a first pump clock, and the sub-pump components may generate second output voltages in response to second pump clocks. The master pump component and the sub-pump components may respectively provide the first output voltage and the second output voltages to the corresponding planes. During a non-interleaved operation, the master pump component and the sub-pump components may generate the first output voltage in response to the first pump clock and provide the first output voltage to a selected plane of the plurality of planes.

Abstract: A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive.