Abstract: Provided herein are a page buffer, a memory device having the page buffer, and a method of operating the memory device. The memory device includes a voltage generator configured to generate operating voltages for operating a plurality of memory cells, a program and verify circuit configured to apply the operating voltages to word lines and bit lines coupled to the memory cells and to perform a program operation and a verify operation, and a program operation controller configured to control the program and verify circuit and the voltage generator so that a bit line precharge operation is performed and so that, when the bit line precharge operation has been completed, a bit line discharge operation is performed.

Abstract: Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.

Abstract: A semiconductor memory device includes memory cells, a first circuit that includes a first latch group including first and second data latch circuits and a second latch group including third and fourth data latch circuits, and a control circuit configured to control a write operation during which first and second data to be written into the memory cells are stored in the first and second data latch circuits, respectively, wherein the first and second data are also stored in the third and fourth data latch circuits, respectively, while the first and second data stored in the first and second data latch circuits, respectively, are being written in the memory cells.

Abstract: A memory device includes a memory cell array having a plurality of memory blocks sharing a source line, a peripheral circuit for performing a program operation and an erase operation on a selected memory block among the plurality of memory blocks, and a control logic for controlling the peripheral circuit. The control logic controls the peripheral circuit such that some source select transistors adjacent to the source line among a plurality of source select transistors included in an unselected memory block among the plurality of memory blocks are floated in a source line precharge operation during the program operation.

Abstract: Disclosed is a semiconductor device in which an internal voltage fluctuation when a current jump occurs is restrained. The semiconductor device includes a plurality of blocks, each of which performs a given operation, and a current jump control circuit. The current jump control circuit monitors control signals in each of the blocks and calculates predicted values of consumption current of the blocks, based on results of monitoring at different timings, thereby controlling a fluctuation of consumption current of the blocks. The current jump control circuit controls operation of a subset or all of the blocks, if an increase of a predicted value of consumption current of the blocks is larger than a first value or a decrease of the predicted value is larger than a second value.

Abstract: Apparatus and methods are provided, such as a method that includes precharging channel material of a string of memory cells in an unselected sub-block of a block of memory cells to a precharge voltage during a first portion of a programming operation. A programming voltage can then be applied to a selected memory cell in a selected sub-block of the block of memory cells during a second portion of the programming operation. The selected memory cell is coupled to a same access line as an unselected memory cell in the unselected sub-block. Additional methods and apparatus are provided.

Abstract: Embodiments of 3D memory devices and methods for operating the 3D memory devices are disclosed. In an example, a method for operating a 3D memory device is disclosed. The 3D memory device includes memory decks each including memory layers in a vertical direction. Each memory layer in a first memory deck is first programmed. The first programming includes applying a program voltage to the memory layer and a first channel pass voltage smaller than the program voltage to each rest of the memory layers. Each memory layer in a second memory deck above the first memory deck is second programmed. The second programming includes applying the program voltage to the memory layer and the first channel pass voltage to each rest of the memory layers. The second programming further includes applying a second channel pass voltage smaller than the first channel pass voltage to each memory layer in the first memory deck.

Abstract: A sense amplifier includes a sense circuit coupled to a bitline and a sense node, a charge circuit coupled to the sense node and the sense circuit, a first current control transistor, an inverter circuit having a first latch node and a second latch node, coupled to the first current control transistor, and an input circuit coupled to the first latch node, the second latch node and the sense node. The first current control transistor includes a first terminal coupled to the system voltage source, a second terminal coupled to the inverter circuit, and a control terminal configured to receive a current control signal. The first current control transistor is a P-type transistor.

Abstract: A solid state storage system, and method of operation thereof, including: a system interface configured to receive host commands; a controller, coupled to the system interface, configured to identify frequently read data blocks from the host commands; a non-volatile memory, coupled to the controller, configured for access of the frequently read data blocks; an error correction code unit, coupled to the controller, configured to provide health monitor parameters for the frequently read data blocks verified by the controller; and a redundant frequently read data (RFRD) area, coupled to the error correction code unit, configured to transfer a recovered data from the frequently read data blocks.

Abstract: A memory device and a control method for a non-volatile memory are provided. The non-volatile memory includes a target erasing region and an unselected region. The control method includes: erasing a target memory cell in the target erasing region. The unselected region is a region, excluding the target erasing region, in the non-volatile memory. The step of erasing the target memory cell includes an erasing operation, a verification operation, and an erasing loop after failing to pass the verification operation. The number of times of performing the erasing loop is an integer greater than or equal to 0. The control method further includes: refreshing a pre-defined portion in the unselected region, wherein a capacity of the pre-defined portion is determined by the number of times of performing the erasing loop.

Abstract: Discussed herein are systems and methods for charging a bit line (BL) during programming of non-volatile memory cells. An embodiment of a memory device comprises a group of memory cells including a first memory cell coupled to a first BL and a second memory cell coupled to a second BL, and a BL charging circuit that provides an inhibit signal to the second BL in response to a control signal to program the first memory cell. To provide the inhibit signal, the BL charging circuit apply a supply voltage to the second BL for an initial wait time and, after the initial wait time, apply a higher voltage than the supply voltage, until the inhibit signal reaches a value of the supply voltage. The first memory cells is programmed in response to the established voltage on the second BL.

Abstract: Methods, systems and apparatus including computer-readable mediums for rearranging data for refresh operations in memory systems such as NAND flash memory devices are provided. In one aspect, a method includes: determining that a particular logical page in a logical block fails based on error bits in a particular physical page that is in a first physical block mapped with the logical block and corresponds to the particular logical page, logical pages in the logical block being mapped to physical pages in the first physical block with an initial mapping order, and executing a refresh operation on the first physical block with a rearranged mapping order for the logical block, the rearranged mapping order being different from the initial mapping order. For the refresh operation, the logical pages in the logical block are mapped to physical pages in a second physical block with the rearranged mapping order.

Abstract: Several embodiments of memory devices and systems with selective page-based refresh are disclosed herein. In one embodiment, a memory device includes a controller operably coupled to a main memory having at least one memory region comprising a plurality of memory pages. The controller is configured to track, in one or more refresh schedule tables stored on the memory device and/or on a host device, a subset of memory pages in the plurality of memory pages having an refresh schedule. In some embodiments, the controller is further configured to refresh the subset of memory pages in accordance with the refresh schedule.

Abstract: A data storage apparatus and a method for preventing data error using the same are provided. The data storage apparatus includes a memory and a memory controller. The memory includes a plurality of blocks. The memory controller is coupled to the memory and configured to perform the following operations: recording a read count of a target block of the memory; performing an error bit check on a free storage space of the target block when the read count of the target block meets a condition; and programming a dummy data to the free storage space of the target block in response to the determination that the check result is negative.

Abstract: Systems and methods are disclosed, comprising a memory device comprising multiple groups of memory cells, the groups comprising a first group of memory cells and a second group of memory cells configured to store information at a same bit capacity per memory cell, and a processing device operably coupled to the memory device, the processing device configured to adjust a scan event threshold for one of the first or second groups of memory cells to a threshold less than a target scan event threshold for the first and second groups of memory cells to distribute scan events in time on the memory device.

Abstract: Apparatuses and methods for charging a global access line prior to accessing a memory are described. An example apparatus may include a memory array of a memory. A plurality of global access lines may be associated with the memory array. The global access line may be charged to a ready-access voltage before any access command has been received by the memory. The global access line may be maintained at the ready-access voltage during memory access operations until the receipt of a post-access command. The post-access command may reset the global access line to an inactive voltage.

Abstract: A controller controls a semiconductor memory device including a plurality of memory blocks. The controller may include a controller control unit and a storing unit. The controller control unit compares the number of times of a read of an original memory block among the plurality of memory blocks with a predetermined copy generation reference value, determines whether to generate copy data of original data stored in the original memory block, and generates a command corresponding to the determination. The storage unit stores the copy generation reference value and address information about the original memory block.

Abstract: A semiconductor memory device, including: a substrate; a plurality of first conductive layers arranged in a first direction intersecting a surface of the substrate; a channel semiconductor layer extending in the first direction and including a first portion facing the plurality of the first conductive layers and a second portion further from the substrate than the first portion; a memory layer arranged between the first portion of the channel semiconductor layer and the plurality of the first conductive layers and including a memory part capable of storing data; and a first semiconductor layer connected to the second portion of the channel semiconductor layer, the first semiconductor layer including crystalline semiconductor containing a first impurity, and the channel semiconductor layer including a crystal grain having a crystal grain size larger than a thickness thereof.

Abstract: A memory device includes a memory cell array including a plurality of memory cells, a page buffer unit including the plurality of memory cells, and a driving determination unit determining whether to perform at least one of a pre-charging operation, a development operation and a latching operation of page buffers connected to the memory cells provided with the read voltage.

Abstract: A data storage device comprises a non-volatile semiconductor memory device and a solid-state drive controller communicatively coupled to the non-volatile semiconductor memory device. The non-volatile semiconductor memory device can store data in memory blocks. The solid-state drive controller can, periodically, retrieve counts from a counter table, select a predetermined number of memory blocks corresponding to the lowest counts, and determine an integrity of the stored data in each of the predetermined number of memory blocks. Each count can correspond to a difference between a count limit and a number of read operations performed on one of the memory blocks.

Abstract: A memory system includes a storage medium including a memory region group having a plurality of memory regions; a memory configured to store a plurality of region read counts respectively corresponding to the plurality of memory regions and a group read count corresponding to the memory region group; a count management circuit configured to, when a first memory region among the plurality of memory regions is read-accessed, based on a first region read count corresponding to the first memory region among the plurality of region read counts, increase the group read count and reduce remaining region read counts other than the first region read count among the plurality of region read counts; and a reliability management circuit configured to perform a reliability management operation for the memory region group, based on the group read count.

Abstract: A three-dimensional (3D) nonvolatile memory device includes a cell string. The cell string includes a pillar structure comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells comprise a first cell group and a second cell group stacked on the first cell group, and a horizontal width of at least a portion of the pillar structure decreases in a depth direction towards the substrate. A method of programming the memory device includes initializing a channel of a memory cell of the first cell group of the cell string through the ground selection transistor of the pillar structure, and then applying a program voltage to the memory cell of the pillar structure of the cell string.

Abstract: Discussed herein are systems and methods for charging a bit line (BL) during programming of non-volatile memory cells. An embodiment of a memory device comprises a group of memory cells including a first memory cell coupled to a first BL and a second memory cell coupled to a second BL, and a BL charging circuit that provides an inhibit signal to the second BL in response to a control signal to program the first memory cell. To provide the inhibit signal, the BL charging circuit apply a supply voltage to the second BL for an initial wait time and, after the initial wait time, apply a higher voltage than the supply voltage, until the inhibit signal reaches a value of the supply voltage. The first memory cells is programmed in response to the established voltage on the second BL.

Abstract: A semiconductor memory device includes a cell string, a common source line controller, and a page buffer. The cell string includes a plurality of memory cells coupled in series between a common source line and a bit line. In a read operation, the common source line controller provides a channel current to the cell string through the common source line. The page buffer senses data stored in a selected memory cell among the plurality of memory cells by sensing a current of the bit line when the channel current is provided. The common source line controller precharges the bit line by providing the channel current to the cell string through the common source line. After the bit line is precharged, the page buffer senses the data stored in the selected memory cell by transmitting a voltage of the bit line to a sensing node.

Abstract: In a memory cell array, a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines are arranged in a matrix. A control circuit controls the potentials of said plurality of word lines and said plurality of bit lines. In an erase operation, the control circuit erases an n number of memory cells (n is a natural number equal to or larger than 2) of said plurality of memory cells at the same time using a first erase voltage, carries out a verify operation using a first verify level, finds the number of cells k (k?n) exceeding the first verify level, determines a second erase voltage according to the number k, and carries out an erase operation again using the second erase voltage.

Abstract: A control method for a storage device is provided. The storage device includes a memory controller and a flash memory. The flash memory includes multiple blocks. The control method includes the following steps. Maintain a state table by the memory controller, wherein the state table records a disturbance count and a last check time of the blocks in the flash memory. Trigger a probe operation on a target block in the flash memory when at least one of the following conditions is met: (a) the disturbance count of the target block is greater than or equal to a disturbance count threshold; and (b) an elapsed time period of the target block is greater than or equal to an elapsed time threshold, wherein the elapsed time period of the target block starts from the last check time of the target block.

Abstract: A memory cell of a split gate type MONOS memory is formed over a plate-shaped fin being a part of a semiconductor substrate. In a data erase operation, in a selected memory cell on which erasing is performed, a drain region is applied with 0 V, a memory gate electrode is applied with a positive voltage, and accordingly, erasing is performed by the FN mechanism. Also, in the data erase operation, in an unselected memory cell on which the erasing is not performed, connected to the same memory gate line as the above-described selected memory cell, the drain region is in an open state, and the memory gate electrode is applied with the positive voltage, whereby an induced voltage region is generated in a channel region. Thus, a potential difference between the channel region and the memory gate electrode is small, and accordingly, the erasing is not performed.

Abstract: A method of forming the semiconductor device that may include forming a trench in a substrate, and forming a metal nitride in the trench. The method may further include forming a split fin structure from the substrate. The metal nitride is positioned in the split portion of the fin structure. The method may continue with removing the metal nitride from a source region and drain region portion of the split fin structure, in which the metal nitride remains in a channel region portion of the split fin structure. A gate structure may then be formed on a channel region portion of the fin structure. A back bias is applied to the semiconductor device using the metal nitride in the split portion of the fin structure as an electrode.

Abstract: Methods, systems and computer program products for extending the shelf life of non-volatile memory devices, aspects of which include detecting that the non-volatile memory device has been disconnected from a power supply and responsively resetting a timer, a first counter, and a second counter and incrementing the first counter and the second counter based on the timer. Based on a determination that the first counter has reached a first threshold value, aspects also include initiating a wireless charging a battery of the non-volatile memory device. Based on a determination that the second counter has reached a second threshold value, aspects also include initiating a refresh of a non-violate memory of the non-volatile memory device. Based on a determination that the refresh of the non-violate memory of the non-volatile memory device has been completed, aspects also include resetting the timer, the first counter, and the second counter.

Abstract: A memory device may include voltage regulation circuitry configured to supply a voltage signal between a high signal and a low signal. The memory device may include a first data line configured to provide a first charge to the voltage regulation circuitry during a first mode of operation of the memory device. The memory device may include a second data line configured to draw a second charge from the voltage regulation circuitry to control a voltage on the second data line during a second mode of operation of the memory device.

Abstract: A data storage device utilized for storing at least one data includes a memory and a controller. The memory includes a plurality of blocks, and each of the blocks has a different respective physical address. The controller is coupled to the memory for mapping the physical addresses to a plurality of logical addresses. After the controller receives a conversion-requesting instruction, it converts a specific logical address from being mapped to a first physical address to being mapped to a second physical address.

Abstract: A nonvolatile memory device including a memory cell array having a plurality of planes; a plurality of page buffers arranged corresponding to each of the plurality of planes; and a control logic circuit configured to transmit a bit line setup signal to each of the plurality of page buffers. Each of the plurality of page buffers includes a precharge circuit configured to precharge a sensing node and a bit line in response to the bit line setup signal, and a shutoff circuit configured to perform a bit line shutoff operation in response to a bit line shutoff signal. The control logic circuit is configured to control a transition time when a level of the bit line setup signal is changed according to a gradient of the bit line shutoff signal which is changed from a first level to a second level.

Abstract: A method of controlling the operation of a memory controller includes, in a read operation of a non-volatile memory device, the memory controller counting a selected read count of a selected string in a selected memory block and/or counting a non-selected read count of a non-selected string in the selected memory block. The memory controller performs a reclaim operation of the selected memory block when the selected read count and/or the non-selected read count exceeds a read threshold. To move data of the selected memory block to another memory block by the reclaim operation, the memory controller may copy the data of the selected memory block to another block by using a changed page address.

Abstract: Systems and methods for reducing residual electrons within a NAND string subsequent to performing a sensing operation using the NAND string or during the sensing operation. A middle-out programming sequence may be performed in which memory cell transistors in the middle of the NAND string are programmed and program verified prior to programming and verifying other memory cell transistors towards the drain-side end of the NAND string and/or the source-side end of the NAND string. In one example, for a NAND string with 32 memory cell transistors corresponding with word lines WL0 through WL31 from the source-side end of the NAND string to the drain-side end of the NAND string, the memory cell transistor corresponding with word line WL16 may be programmed and program verified prior to programming the memory cell transistors corresponding with word lines WL15 and WL17.

Abstract: A semiconductor memory device includes first and second memory cells, first and second word lines that are connected to the first and second memory cells, respectively, a first transistor connected to one end of the first word line, and second and third transistors respectively connected to first and second ends of the second word line. During a read operation on the first and second memory cells, when the first word line is selected, a first voltage is applied to the second word line, and then a second voltage is applied to the first word line, and when the second word line is selected, the first voltage is applied to the first word line, and then the second voltage is applied to the second word line. The second voltage is applied to the first word line for a longer duration than is applied to the second word line.

Abstract: A semiconductor device includes a connector configured for connection to a host, a power circuit supplied with a first voltage from the host via the connector, the power circuit including first and second channels configured to generate second and third voltages, respectively, from the first voltage, a semiconductor memory supplied with the second voltage via the first channel, and a controller for the semiconductor memory, supplied with the third voltage via the second channel. When the first voltage is less than a first threshold, the power circuit turns off the first channel and the second channel.

Abstract: A non-volatile memory apparatus including a non-volatile storage circuit, a main memory and a controller, and an operating method thereof are provided. Each of a plurality of logical block address groups includes a plurality of logical block addresses. Each of the logical block address groups is assigned a group read-count value. An adjustment of the group read-count values is triggered by a read command of a host. When one read-count value of the group read-count values exceeds a preset range, the controller performs a scan operation to non-volatile storage blocks of the non-volatile storage circuit corresponding to a corresponding logical block address group of the read-count value, so as to check a number of error bits. The controller decides whether to perform a storage block data-moving operation to the non-volatile storage block corresponding to the corresponding logical block address group based on results of the scan operation.

Abstract: In one embodiment, an apparatus comprises a memory array; a sense circuit comprising a first transistor and a sense node coupled to the first transistor and selectively coupled to a memory cell of the memory array via a data line; and a tracking circuit comprising a second transistor having a threshold voltage that is to track a threshold voltage of the first transistor, the tracking circuit to generate at least one sensing parameter of the sense circuit based on the threshold voltage of the second transistor.

Abstract: A three-dimensional semiconductor memory device includes stacked structures, vertical semiconductor patterns, common source regions, and well pickup regions. The stacked structures are disposed on a semiconductor layer of a first conductivity type. Each stacked structure includes electrodes vertically stacked on each other and is extended in a first direction. The vertical semiconductor patterns penetrate the stacked structures. The common source regions of a second conductivity type are disposed in the semiconductor layer. At least one common source region is disposed between two adjacent stacked structures. The at least one common source region is extended in the first direction. The well pickup regions of the first conductivity type are disposed in the semiconductor layer. At least one well pickup region is adjacent to both ends of at least one stacked structure.

Abstract: To suppress the degradation of memory cells in a non-volatile memory. A read processing unit performs a read process for reading read data from each of a plurality of memory cells on the basis of a first threshold. An error detection unit detects presence or absence of an error in the read data and specifies memory cells in which the error is present among the plurality of memory cells. A re-read processing unit performs a re-read process for reading data, as re-read data, from the specified memory cells on the basis of a second threshold different from the first threshold. A refresh processing unit rewrites, for a memory cell of which the re-read data has a different value from the read data among the specified memory cells, data with the re-read data as a refresh process.

Abstract: A method of forming the semiconductor device that may include forming a trench in a substrate, and forming a metal nitride in the trench. The method may further include forming a split fin structure from the substrate. The metal nitride is positioned in the split portion of the fin structure. The method may continue with removing the metal nitride from a source region and drain region portion of the split fin structure, in which the metal nitride remains in a channel region portion of the split fin structure. A gate structure may then be formed on a channel region portion of the fin structure. A back bias is applied to the semiconductor device using the metal nitride in the split portion of the fin structure as an electrode.

Abstract: A memory device includes: a memory including a plurality of blocks, each including a plurality of pages; and a control logic that controls a read operation and a copy-back operation on the memory based on a combination of a block read operation number and a page read operation number.

Abstract: A control signal generation circuit may include: a counting unit suitable for generating counting information; a first signal generation unit suitable for activating/deactivating a first signal based on the counting information, first rising information, and first falling information; a second signal generation unit suitable for activating/deactivating a second signal based on the counting information, second rising information, second falling information, and the first falling information; and a control signal driving unit suitable for driving a control signal in response to the first and second signals.

Abstract: Proposed as a configuration, a controlling method, and a testing method for a ferroelectric shadow memory are (1) a bit line non-precharge method, in which no precharging of a bit line is performed during a read/write operation; (2) a plate line charge share method, in which electric charge is shared between plate lines that are driven sequentially during store/recall operation; (3) a word line boost method, in which the potential on a word line is raised during a write operation; (4) a plate line driver boost method, in which the driving capacity of a plate line driver is raised during a store/recall operation; and (5) a testing method for detecting a defect in a ferroelectric capacitor by arbitrarily setting a potential on a bit line from outside a chip.

Abstract: A method for managing flash memory is provided. The method includes determining at least one property of a data and determining to which type of a plurality of types of flash memory to write the data, based on the at least one property of the data. The plurality of types of flash memory includes at least two types of flash memory having differing numbers of bits per cell. The method includes writing the data to a flash memory of the determined type. A nonvolatile memory manager and a system are provided.

Abstract: A method of forming the semiconductor device that may include forming a trench in a substrate, and forming a metal nitride in the trench. The method may further include forming a split fin structure from the substrate. The metal nitride is positioned in the split portion of the fin structure. The method may continue with removing the metal nitride from a source region and drain region portion of the split fin structure, in which the metal nitride remains in a channel region portion of the split fin structure. A gate structure may then be formed on a channel region portion of the fin structure. A back bias is applied to the semiconductor device using the metal nitride in the split portion of the fin structure as an electrode.

Abstract: A method of operating a memory controller includes; counting a number of read operations directed to a page-group of data stored in a block and generating a first read count number, then comparing the first read count number with a first reference count threshold among a first set of reference count thresholds associated with the page-group, and upon determining that the first read count number exceeds the first reference count threshold, performing a copy-back operation of the page-group data from the block to another block.

Abstract: A memory circuit comprises an array of data storage elements; access circuitry to access a data bit, stored by a data storage element enabled for access, by an access signal for that data storage element; and control circuitry to enable groups of data storage elements for access, the groups having a group size, the group size being one or more, the access signals for data storage elements in a group being combined to provide a combined access signal common to that group of data storage elements; the control circuitry being configured to selectively operate in at least a first mode and a second mode, the group size in the first mode being different to the group size in the second mode.

Abstract: A dynamic random access memory device includes a plurality of memory subblocks. Each subblock has a plurality of wordlines whereto a plurality of data store cells are connected. Partial array self-refresh (PASR) configuration settings are independently made. In accordance with the PASR settings, the memory subblocks are addressed for refreshing. The PASR settings are made by a memory controller. Any kind of combinations of subblock addresses may be selected. Thus, the memory subblocks are fully independently refreshed. User selectable memory arrays for data retention provide effective memory control programming especially for low power mobile application.

Abstract: A read leveling method for a memory device is provided. The memory device includes a first memory block and at least a second memory block. The read leveling method includes the following steps. Determining whether a block read count of the first memory block is larger than or equal to a first threshold. Detecting a page read count of a page of the first memory block when the block read count of the first memory block is larger than or equal to the first threshold. Determine whether the block read count of the first memory block is larger than or equal to a second threshold. Move data of one of the page of the first memory block to a page of the second memory block when the block read count of the first memory block is larger than or equal to the second threshold.