Abstract: A memory circuit includes a transistor having a channel in an oxide semiconductor layer, a capacitor, a first arithmetic circuit, a second arithmetic circuit, a third arithmetic circuit, and a switch. An output terminal of the first arithmetic circuit is electrically connected to an input terminal of the second arithmetic circuit. The input terminal of the second arithmetic circuit is electrically connected to an output terminal of the third arithmetic circuit via the switch. An output terminal of the second arithmetic circuit is electrically connected to an input terminal of the first arithmetic circuit. An input terminal of the first arithmetic circuit is electrically connected to one of a source and a drain of the transistor. The other of the source and the drain of the transistor is electrically connected to one of a pair of electrodes of the capacitor and to an input terminal of the third arithmetic circuit.

Abstract: A decoder circuit to decode an address for accessing a memory cell in a memory array includes address latch circuitry, inverter circuitry, and first address pre-decode circuitry. The address latch circuitry receives an address signal and generates address holding signals during a setup period. The address latch circuitry latches the address holding signals during an address hold period following the setup period. The inverter circuitry receives the address signal and generates a complementary address signal. The first address pre-decode circuitry decodes the address signal and the address holding signals during the setup period to generate a first pre-decode address signal at an output of the first address pre-decode circuitry. In addition, the first address pre-decode circuitry decodes the address holding signals during the address hold period to maintain the first pre-decode address signal at the output of the first address pre-decode circuitry.

Abstract: Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.

Abstract: A mechanism is provided in a data processing system for enhancing wiring structure for a cache supporting an auxiliary data output. The mechanism splits the data cache into a first data portion and a second data portion. The first data portion provides a first set of data elements and the second data portion provides a second set of data elements. The mechanism connects a first data path to provide the first set of data elements to a primary output and connects a second data path to provide the second set of data elements to the primary output. The mechanism feeds the first data path back into the second data path and feeds the second data path back into the first data path. The mechanism connects a secondary output to the second data path.

Abstract: A system and method to read and write data at a memory cell that includes multiple non-volatile memories is disclosed. In a particular embodiment, a memory device includes a plurality of memory cells. At least one of the memory cells includes a first non-volatile memory including a first resistive memory element and a second multi-port non-volatile memory including a second resistive memory element. Each of the first non-volatile memory and the second non-volatile memory is accessible via multiple ports.

Abstract: A semiconductor memory apparatus including a test circuit configured for generating compressed data by comparing and compressing data stored in a plurality of memory cells inside a memory bank during a first test mode, and configured for outputting the compressed data as test data to an input/output pad through one selected global line during the first test mode, and the test circuit is configured for transmitting the compressed data to a plurality of global lines during a second test mode, combining the compressed data loaded in the respective global lines during the second test mode, and outputting the combination result as the test data to the input/output pad during the second test mode.

Abstract: A semiconductor memory apparatus includes a command processing block configured to generate a voltage generation start signal, a first write control signal, a second write control signal, a read signal, and an operation signal in response to a first control signal and a second control signal in a write operation, and a memory control block configured to electrically couple a memory block, which stores data, to a sense amplifier or apply a predetermined voltage to the memory block in response to the voltage generation start signal, the first write control signal, the second write control signal, the read signal, and the operation signal.

Abstract: To produce a memory which resists ion or photon attack, a memory structure is chosen whose memory point behaves asymmetrically with regard to these attacks. It is shown that in this case, it is sufficient to have a reference cell for an identical and periodic storage structure in order to be able to correct all the memory cells assailed by an attack. An error correction efficiency of ½ is thus obtained, with a simple redundancy, whereas the conventional methods make provision, for the same result, to triple the storage, to obtain a less beneficial efficiency of ?.

Abstract: A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices.

Abstract: Disclosed are a semiconductor storage device and a manufacturing method. The storage device has: a substrate; a first word line above the substrate; a first laminated body above the first word line and having N+1 first inter-gate insulating layers and N first semiconductor layers alternately laminated; a first bit line above the laminated body and extending in a direction that intersects the first word line; a first gate insulating layer on side surfaces of the first inter-gate insulating layers and the first semiconductor layers; a first channel layer on the side surface of the first gate insulating layer; and a first variable resistance material layer on the side surface of the first channel layer. The first variable resistance material layer is in a region where the first word line and the first bit line intersect. A polysilicon diode is used as a selection element.

Abstract: An exemplary semiconductor memory cell is provided to include: a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with the floating body region; a second region in electrical contact with the floating body region and spaced apart from the first region; a gate positioned between the first and second regions; a buried layer region in electrical contact with the floating body region, below the first and second regions, spaced apart from the first and second regions; and a substrate region configured to inject charge into the floating body region to maintain the state of the memory cell; wherein an amount of charge injected into the floating body region is a function of a charge stored in the floating body region.

Abstract: An integrated circuit chip includes a test enable pad configured to receive a test enable signal, a plurality of test input pads including a reset pad, a signal combination unit configured to combine signals input to the plurality of test input pads when the test enable signal is activated, and to generate a plurality of test output signals, a plurality of test output pads configured to output the plurality of test output signals, and a reset control unit configured to generate a system reset signal using a signal input to the reset pad when the test enable signal is deactivated, and to generate the system reset signal using the test enable signal when the test enable signal is activated.

Abstract: A semiconductor memory device includes a plurality of memory regions formed on one chip, each of the memory regions having a plurality of volatile memory cells that are formed with a density or capacity of 2^K bits, where K is an integer greater than or equal to 0, and a plurality of input/output (I/O) terminals for inputting and outputting data of the volatile memory cells, and at least one peripheral region that controls a write operation for writing data into the memory regions and a read operation for reading data from the memory regions based on a command and an address input from outside. Thus, a total or entire density of the memory regions corresponds to a non-standard (or ‘interim’) density so that the semiconductor memory device may have an interim density.

Abstract: A system in package (SIP) semiconductor system includes a memory device, a controller, a first input/output terminal, a test control unit, and a second input/output terminal. The controller communicates with the memory device. The first input/output terminal performs communication between the controller and a device external to the SIP semiconductor system. The test control unit controls a predetermined test mode of the memory device. The second input/output terminal performs communication between the test control unit and at least the device external to the SIP semiconductor system.

Abstract: A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices.

Abstract: To provide a semiconductor device that has a novel structure and achieves a higher degree of convenience, the semiconductor device is configured to include a memory cell that stores binary data or multilevel data, and a reading circuit that reads the data stored in the memory cell and transfers the data to the outside. The reading circuit includes a first reading circuit for reading binary data and a second reading circuit for reading multilevel data.

Abstract: A system is provided for multi-rank, partial-width memory modules. A memory controller is provided. Additionally, a memory bus is provided. Further, a memory module with a plurality of ranks of memory circuits is provided, the memory module including a first number of data pins that is less than a second number of data pins of the memory bus.

Abstract: A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.

Abstract: A semiconductor integrated circuit includes a first pad allocated to receive a row address, a second pad allocated to discriminate a first input/output mode and a second input/output mode, a detector configured to generate a detection signal in response to logic levels of the first and second pads, and a column address controller configured to deassert a column address to a logic low level in response to a deasserted detection signal. The semiconductor integrated circuit may selectively support one of first and second memory capacities and one of the first and second input/output modes using the logic levels of the first and second pads.

Abstract: Devices and circuits for wiring configurations of a bus system and power supply wires in a memory chip with improved power efficiencies. The effective resistance on the power supply wires may be reduced by utilizing non-active bus wires as additional power wires connected in parallel with the other supply wires. The non-active bus wires may reduce or prevent parasitic couplings and cross-talk effects between neighboring sensitive wires, thereby improving performance of the chip.

Abstract: To include first and second data input/output terminals allocated to first and second memory circuit units, respectively, and an address terminal allocated in common to these memory circuit units. When a first chip selection signal is activated, the first memory circuit unit performs a read operation or a write operation via the first data input/output terminal based on an address signal regardless of an operation of the second memory circuit unit. When a second chip selection signal is activated, the second memory circuit unit performs a read operation or a write operation via the second data input/output terminal based on the address signal regardless of an operation of the first memory circuit unit. With this configuration, a wasteful data transfer can be prevented, and the effective data transfer rate can be increased.

Abstract: A memory module can include a data buffer having a data bus interface and a dynamic random access memory (DRAM) coupled to the data buffer. The memory module may also include a switch connected in parallel with the data buffer, wherein the switch can selectively bypass the data buffer. In one example, the memory module also includes a registered buffer having an address bus interface, where the switch may selectively bypass the data buffer based on a program signal obtained from an address bus via the address bus interface.

Abstract: Methods, memory devices and systems are disclosed. In one embodiment, a non-volatile memory device receives command signals through the same input/output terminals that receive address signals and write data signals and transmit read data signals. The input/output terminals are connected to a multiplexer, which is responsive to a received mode control signal to couple the input/output terminals to either a command bus or an input/output bus. A latch in the memory device latches the command signals when the mode control signal causes the input/output terminals to be coupled to the input/output bus. As a result, the command signals continue to be applied to the command bus. When the mode control signal causes the input/output terminals to be coupled to the input/output bus, write data signals are clocked into the memory device and read data signals are clocked out of the memory device responsive to a received clock signal.

Abstract: Such a device is disclosed that includes a first semiconductor chip including a plurality of first terminals, a plurality of second terminals, and a first circuit coupled between the first and second terminals and configured to control combinations of the first terminals to be electrically connected to the second terminals, and a second semiconductor chip including a plurality of third terminals coupled respectively to the second terminals, an internal circuit, and a second circuit coupled between the third terminals and the internal circuit and configured to activate the internal circuit when a combination of signals appearing at the third terminals indicates a chip selection.

Abstract: A semiconductor memory device includes an address decoder to decode an address specifying pseudo-multiport cells in memory blocks, a first word line driver to output a word line selection signal selecting one of word lines of one of the pseudo-multiport cells based on a row address in the address, and a second word line driver having an output part to output the word line selection signal into one of a pair of the word lines of the pseudo-multiport cell, and a NOR logic part to output NOR of the word line selection signal and a read/write selection signal into the other one of the pair of the word lines, the read/write selection signal selecting writing or reading operations. The second word line driver activates the pair of the word lines for writing data, and activates one of the pair of the word lines for reading data.

Abstract: A semiconductor memory device includes a first page buffer group including a plurality of page buffers coupled to memory cells of a first memory array through bit lines, a second page buffer group, a coupling circuit configured to couple an output terminal and an inverse output terminal of a selected page buffer of the first page buffer group to a first local I/O line and a first inverse local I/O line, respectively, or an output terminal and an inverse output terminal of a selected page buffer of the second page buffer group to a second local I/O line and a second inverse local I/O line, respectively, in response to a column select signal, and a sense amplifier configured to detect a voltage difference between the first local I/O line and the first inverse local I/O line or between the second local I/O line and the second inverse local I/O line.

Abstract: A hybrid solid-state memory system is provided for storing data. The solid-state memory system comprises a volatile solid-state memory, a non-volatile solid-state memory, and a memory controller. Further, a method is provided for storing data in the solid-state memory system. The method comprises the following steps. A write command is received by the memory controller. Write data is stored in the volatile memory in response to the write command. Data is transferred from the volatile memory to the non-volatile memory in response to a data transfer request.

Abstract: A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices.

Abstract: A nonvolatile memory device is provided relating to a test operation for a Low Power Double-Data-Rate (LPDDR) nonvolatile memory device. The nonvolatile memory device comprises a command decoder configured to decode a test mode signal in a test mode to output program and erasure signals into a memory, an address decoder configured to decode a command address inputted through an address pin in the test mode to output a cell array address into the memory, and an overlay window configured to store a data inputted through a data pin in the test mode.

Abstract: A semiconductor memory device includes a memory block configured to store a data inputted/outputted through a data transfer line, a data output block configured to output the data loaded on the data transfer line in response to a source clock, wherein the data output block is controlled to be coupled with the data transfer line in response to a write operation signal, a write operation signal generation block configured to generate the write operation signal in response to an operation selection signal and a reference clock lagging behind the source clock by a set time, and a data input block configured to load the data on the data transfer line in response to the write operation signal.

Abstract: A memory system includes a controller having first and second input/output terminals, and first and second memory devices each having first and second input/output terminals. The system includes a path selection mechanism for selectively employing one of the first and second terminals of either the controller or the first memory device for communicating a first input/output signal between the controller and the first memory device, and employing the other one of the first and second terminals for communicating a second input/output signal between the controller and the first memory device. The path selection mechanism selectively employs the first and second terminals in accordance with data indicating which of the first and second terminals of the first memory device is connected to the first terminal of the controller and which of the first and second terminals of the first memory device is connected to the second terminal of the controller.

Abstract: An integrated circuit includes a serial peripheral interface memory device. In an embodiment, the memory device includes a clock signal, a plurality of pins, and a configuration register. In an embodiment, the configuration register includes a wait cycle count. The method includes transmitting a read address to the memory device using a first input/output pin and a second input/output pin concurrently. In an embodiment, the read address includes at least a first address bit and a second address bit, the first address bit being transmitted using the first input/output pin, and the second address bit being transmitted using the second input/output pin. The method includes accessing the memory device for data associated with the address and waiting a predetermined number clock cycles associated with the wait cycle count. The method includes transferring the data from the memory device using the first input/output pin and the second input/output pin concurrently.

Abstract: A memory circuit includes a transistor having a channel in an oxide semiconductor layer, a capacitor, a first arithmetic circuit, a second arithmetic circuit, a third arithmetic circuit, and a switch. An output terminal of the first arithmetic circuit is electrically connected to an input terminal of the second arithmetic circuit. The input terminal of the second arithmetic circuit is electrically connected to an output terminal of the third arithmetic circuit via the switch. An output terminal of the second arithmetic circuit is electrically connected to an input terminal of the first arithmetic circuit. An input terminal of the first arithmetic circuit is electrically connected to one of a source and a drain of the transistor. The other of the source and the drain of the transistor is electrically connected to one of a pair of electrodes of the capacitor and to an input terminal of the third arithmetic circuit.

Abstract: A multi-level memory apparatus includes two or more current paths configured to pass currents having different levels, a memory cell selectively coupled to the two or more current paths, and a cell current copy unit configured to copy a cell current flowing through the memory cell.

Abstract: A memory arrangement includes a plurality of memory blocks, a first group of access ports, and a second group of access ports. Routing circuitry couples each pair of the first and second groups of access ports to a respective one of the memory blocks. Each pair includes a first access port from the first group and a second access port from the second group. The first access port has write access to a first portion of the respective memory blocks but not to a second portion of the memory block, and has read access to the second portion but not to the first portion. The second access port has write access to the second portion but not to the first portion, and has read access to the first portion but not to the second portion.

Abstract: The present disclosure includes methods, and circuits, for operating a memory device. One method embodiment for operating a memory device includes controlling data transfer through a memory interface in an asynchronous mode by writing data to the memory device at least partially in response to a write enable signal on a first interface contact, and reading data from the memory device at least partially in response to a read enable signal on a second interface contact. The method further includes controlling data transfer in a synchronous mode by transferring data at least partially in response to a clock signal on the first interface contact, and providing a bidirectional data strobe signal on an interface contact not utilized in the asynchronous mode.

Abstract: A common standard may be used for both dynamic random access memories and non volatile memories, despite the fact that the non-volatile memory generally needs bidirectional communications to coordinate writing with a memory controller. In one embodiment, a package connector on the non-volatile memory may be used for one function that does not involve communications with the memory controller during reading and may be used for communications with the memory controller during writing. Particularly, those communications during writing may be to indicate to the memory controller when the memory is ready for writing and when the memory is busy so that a write must be deferred until the memory is ready to be written to.

Abstract: A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices.

Abstract: A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices.

Abstract: Embodiments of the present invention relate to configurable inputs and/or outputs for memory and memory stacking applications in processor-based systems. More specifically, embodiments of the present invention include processor-based systems with volatile-memory having memory devices that include a die having a circuit configured for enablement by a particular signal, an input pin configured to receive the particular signal, and a path selector configured to selectively designate a signal path to the circuit from the input pin.

Abstract: A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a substrate being made of a material having a first conductivity type selected from p-type conductivity type and n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type; a second region having the second conductivity type, the second region being spaced apart from the first region; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region having the first conductivity type; and a gate positioned between the first and second regions and adjacent the body region.

Abstract: Methods and memory devices are disclosed, for example a memory device that has both an analog path and a digital path that both share the same input/output pad. One of the two paths on each pad is selected in response to command signals that indicate the nature of the signal being either transmitted to the device or read from the device. Each digital path includes a latch for latching digital input data. Each analog path includes a sample/hold circuit for storing either analog data being read from or analog data being written to the memory device.

Abstract: A memory system includes a plurality of memory devices having data terminals that are commonly connected to a memory controller. Each of the memory devices includes a data output circuit that outputs read data that is read from a memory cell array in response to a read command to the data terminal, and an output-timing adjustment circuit that adjusts an output timing of read data that is output from the data output circuit. The memory controller sets an adjustment amount of adjustment performed by an output-timing adjustment circuit such that delay times from when the read command is issued until when the read data is received match in the memory devices, by issuing a setting command to each of the memory devices.

Abstract: A multi-port memory device includes: a bank having a plurality of matrices; a plurality of test data input/output units where data is input/output using a test mode for detecting a defective memory cell; a plurality of ports converted into a decoding device for decoding a command/address at the test mode; a plurality of data transfer lines for transferring data between the matrices and the test data I/O units, wherein the data transfer lines is grouped into the number of matrices; and a plurality of temporary storing units included between the data transfer lines and the matrices for temporarily storing data.

Abstract: A global line sharing circuit of a semiconductor memory device includes: a ZQ calibration unit configured to adjust an impedance of a DQ output driver; a test unit configured to control a test operation; and a shared global line coupled to and used in common by the ZQ calibration unit and the test unit.

Abstract: A system is provided for multi-rank, partial-width memory modules. A memory controller is provided. Additionally, a memory bus is provided. Further, a memory module with a plurality of ranks of memory circuits is provided, the memory module including a first number of data pins that is less than a second number of data pins of the memory bus.

Abstract: The present invention is directed to systems and methods for improving access to non-volatile solid-state storage systems. Embodiments described herein provide a physical chunk number (PCN), or a physical page number (PPN), by which a controller can access the next available chunks (or pages) in a programming sequence optimized by concurrency. By incrementing the PCN, the controller can program consecutive chunks in the optimized programming sequence. In one embodiment, the programming sequence is determined at the time of initial configuration and the sequence seeks to synchronize data programming and data sending operations in subcomponents of the storage system to minimize contention and wait time. In one embodiment, the PCN includes an index portion to a superblock table with entries that reference specific blocks within the subcomponents in a sequence that mirrors the optimized programming sequence, and a local address portion that references a particular chunk to be programmed or read.

Abstract: A memory module includes a plurality of memory chips, a plurality of data register buffers, and a command/address/control register buffer mounted on a module PCB. The data register buffers perform data transfers with the memory chips. The command/address/control register buffer performs buffering of a command/address/control signal and generates a control signal. The buffered command/address/control signal is supplied to the memory chips, and the control signal is supplied to the data register buffers. According to the present invention, because line lengths between the data register buffers and the memory chips are shortened, it is possible to realize a considerably high data transfer rate.

Abstract: A semiconductor structure includes a first strap cell, a first read port, and a first VSS terminal. The first strap cell has a first strap cell VSS region. The first read port has a first read port VSS region, a first read port read bit line region, and a first read port poly region. The first VSS terminal is configured to electrically couple the first strap cell VSS region and the first read port VSS region.

Abstract: A semiconductor device includes a plurality of memory cells including a first transistor and a second transistor, a reading circuit including an amplifier circuit and a switch element, and a refresh control circuit. A first channel formation region and a second channel formation region contain different materials as their respective main components. A first gate electrode is electrically connected to one of a second source electrode and a second drain electrode. The other of the second source electrode and the second drain electrode is electrically connected to one of input terminals of the amplifier circuit. An output terminal of the amplifier circuit is connected to the other of the second source electrode and the second drain electrode through the switch element. The refresh control circuit is configured to control whether the switch element is turned on or off.