Abstract: A semiconductor device includes a plurality of package terminals included in a package, a plurality of chips provided on the package, each of the chips including a memory cell array and a plurality of data input/output terminals, and a plurality of data line control switch disposed between the plurality of package terminals and the plurality of data input/output terminals. The plurality of data line control switches of each of the chips connects the data input/output terminals of each of the chips to corresponding ones of the plurality of package terminals in a normal mode. The plurality of data line control switches connects different groups of the data input/output terminals in different ones of the chips to respective groups of the package terminals in a test mode. The respective groups of the data input/output terminals belong to the plurality of data input/output terminals. The respective groups of the package terminals are different between different ones of the chips.

Abstract: In a semiconductor integrated circuit having a register file of a multiport configuration, a first holding circuit 20A is dedicated to a first functional block having one first write port section 21AW and two first read port sections 21AR1 and 21AR2. A second holding circuit 30B is dedicated to a second functional block having one second write port section 31AW and one second read port section 31BR. When it is necessary to read data held in the first holding circuit 20A from the second read port section 31BR, for example, a data interchange operation is performed as follows. After the data of the second holding circuit 30B is latched in a latch circuit 40, the data of the first holding circuit 20A is transferred to the second holding circuit 30B, and then the data of the second holding circuit 30B latched in the latch circuit 40 is transferred to the first holding circuit 20A. Thus, the area necessary to provide a register file is significantly reduced.

Abstract: A memory with improved write current is provided, including a bit line, a write switch and a control circuit. The write switch is coupled between a voltage source and the bit line, and has a control terminal. Based on a bit line select signal, the control circuit controls the electric conductance of the write switch and discharges/charges the parasitic capacitors of the write switch. The voltage source is turned on after the control terminal of the write switch reaches a pre-determined voltage level.

Abstract: In the storage device of the invention, latch control is performed on a series of signals in response to latch control signals. Latch control terminals are provided to which the latch control signals are input respectively and a plurality of signal terminals to which a series of signals are input. Herein, a plurality of latch circuits is provided so as to correspond to the plurality of signal terminals, respectively. The plurality of latch circuits are located within a specified distance from their associated signal terminals respectively and within a specified distance from the latch control terminals. The delays of signal transmission from the signal terminals to their associated latch circuits can be equalized and the delays of signal transmission from the latch control terminals to which the latch control signals for executing latch control are input to the latch circuits can be equalized. This contributes to a reduction in the skew of the latch characteristics of the signals.

Abstract: A memory interface subsystem including a write logic and a read logic. The write logic may be configured to communicate data from a memory controller to a memory. The read logic may be configured to communicate data from the memory to the memory controller. The read logic may comprise a plurality of physical read datapaths. Each of the physical read datapaths may be configured to receive (i) a respective portion of read data signals from the memory, (ii) a respective read data strobe signal associated with the respective portion of the received read data signals, (iii) a gating signal, (iv) a base delay signal and (v) an offset delay signal.

Abstract: Disclosed is a semiconductor memory device including a discharge circuit that discharges bit lines to a ground potential, a sense amplifier of a single-ended input configuration, and a charging transistor connected between a power supply and an input node of the sense amplifier. The charging transistor charges a bit line from a side of the input node of the sense amplifier via the selected column select transistor which is set to an on state. When a current path to the ground from the bit line to which a selected memory cell is connected is turned off at a time of reading, the input node of the sense amplifier is charged by the charging transistor, and a potential at the input node of the sense amplifier is thereby raised. Then, after the input node of the sense amplifier has been further charged with the one of the column select transistors turned off, the reading operation is performed.

Abstract: A semiconductor device comprises a board, a first semiconductor storage device placed on the board, and a second semiconductor storage device placed on the board. Each of the first and second semiconductor storage devices has a first pad for inputting a chip enable signal, a second pad for inputting a write enable signal, a third pad for inputting an output enable signal, a fourth pad for inputting an address signal, and a fifth pad for inputting data. The first semiconductor storage device has a sixth pad which is electrically connected to the first pad of the second semiconductor device, and the second semiconductor storage device has a seventh pad which is electrically connected to the first pad of the first semiconductor device.

Abstract: A nonvolatile semiconductor memory device and a writing method thereof are provided. The nonvolatile semiconductor memory device includes a cell array, a controller configured to receive input data from an outside source, an address latch unit configured to store a Y-address of the input data and X-addresses respectively corresponding to at least two wordlines, over which the input data is written, based on an address of the input data output from the controller, and a page buffer configured to receive the input data from the controller and temporarily store the input data. The controller writes the data stored in the page buffer over the two wordlines in the cell array based on the at least two X-addresses and the Y-address.

Abstract: An integrated circuit and a method for operating an integrated circuit is disclosed. One embodiment provides a semi-conductor component, an electronic system, and a method for operating an integrated circuit. A method for operating an integrated circuit provides applying a voltage to a line or a connection in accordance with data to be input. A current is applied to the line or the connection in accordance with data to be output.

Abstract: A semiconductor memory device capable of operating in a plurality operating modes and a method for controlling the device may be provided. The semiconductor memory device may include a selecting unit and a plurality of control circuits operating in a plurality of operating modes. The selecting unit may transmit a selecting signal to select one of the plurality of operating modes. The plurality of control circuits may control operations of the semiconductor memory device in the plurality of operating modes, and the plurality of control circuits may be either enabled or disabled in response to the selecting signal. The semiconductor memory device and the method of controlling the device may have a capability of providing optimized performance in response to a change of operational conditions by selecting one of a plurality of the operating modes.

Abstract: A multi-port memory device includes: a bank having a plurality of matrices; a plurality of test data input/output units where data is input/output using a test mode for detecting a defective memory cell; a plurality of ports converted into a decoding device for decoding a command/address at the test mode; a plurality of data transfer lines for transferring data between the matrices and the test data I/O units, wherein the data transfer lines is grouped into the number of matrices; and a plurality of temporary storing units included between the data transfer lines and the matrices for temporarily storing data.

Abstract: A configurable processor architecture uses a common simulation database for multiple processor configurations to reduce the cost of producing customized processor configurations. An unchanging core portion is used in each processor configuration. To support different memory modules, identification signals are provided from the memory modules or an identification module to configure the core portion.

Abstract: Disclosed are a semiconductor device capable of testing memory cells and a test method. The semiconductor device includes a plurality of terminals, each terminal being configured to receive similar data during a test mode, a plurality of buffers, each buffer being configured to receive data from a corresponding terminal and output either the data or changed data to a corresponding memory cells in response to a control signal, and a control unit configured to generate a plurality of control signals, each control signal being respectively applied to a corresponding buffer.

Abstract: A semiconductor memory device having a status register read function includes a plurality of data output pads electrically connected to corresponding package pin, and a swap controller connected between the plurality of data output pads and a plurality of output lines that output memory-related unique information in a specific operation mode. The swap controller controls a swap according to preset swap program information when a swap is needed to match the data output pads to the package pins.

Abstract: An integrated circuit memory device may include a memory cell array and a plurality of data input/output pins. The plurality of data input/output pins may be configured to receive data from a memory controller to be written to the memory cell array during a data write operation, and the data input/output pins may be further configured to provide data to the memory controller from the memory cell array during a data read operation. A mode register may be configured to store information defining an operational characteristic of the memory device, and the mode register may be configured to be set using the data input/output bus. Related methods, systems, and additional devices are also discussed.

Abstract: A semiconductor device includes a pad configured to receive a data strobe signal, and a path selector configured to output the data strobe signal through a corresponding input path during a normal operation, and to output the data strobe signal through a plurality of input paths in response to a path selection signal during a test operation.

Abstract: Techniques for programming trimming circuitry of a power integrated circuit without the need for separate programming pins are disclosed. According to a first aspect of the invention, there is provided a power supply controller IC with internal circuitry, a plurality of external connections, the IC further comprising trimming circuitry with no external connections to the IC other than via shared ones of the external connections. The shared external connections can comprise a first connection comprising a data input for receiving data for programming the trimming circuitry, and a second, different connection comprising a select input to select between a data receiving mode for receiving data from the data input and a programming mode for programming the trimming circuitry using the received data.

Abstract: One embodiment of the present invention includes a column multiplexer for accessing data from a memory array comprising an output node having a logic state that is based on a logic state of a control node, and column elements, each comprising a first pair of series connected switches controlled by a column select signal and a bit line signal associated with data stored in a plurality of memory cells. The first pair of switches is configured to set the control node to a logic low state based on a logic state of the bit line signal. The column elements each also comprise a second pair of series connected switches controlled by the bit line signal and a complement of the column select signal. The second pair of switches is configured to set the control node to a logic high state based on the logic state of the bit line signal.

Abstract: By activating a word line and a bit line in parallel with a storage transistor set to OFF, the potential conditions of the charge line, and the word line, and the bit line are controlled so that the potential of a body region is increased by a leak current flowing from a connecting node to the body region in a period until the storage transistor is turned ON.

Abstract: A multi-bank block architecture for integrated circuit memory devices which effectively reduces the total length of the datapath for a given input/output (I/O) from the memory cells in the memory array to the actual device I/O pad. In accordance with the present, a memory block in a memory device is effectively divided into two or more banks, and between these banks an additional non-shared sense amplifier band is added as a sense amplifier cannot be shared across a bank boundary. Within this multi-bank block, separate data paths are provided for the banks with the column (Y-Select) lines being common.

Abstract: Embodiments of the invention relate generally to a coupling device, to a processor arrangement, to a data processing arrangement, and to methods for transmitting data. In an embodiment of the invention, a coupling device for coupling a memory, which has a serial data output, with a processor, which has a parallel data input, is provided. The coupling device may include a serial data interface configured to receive data, a parallel data interface configured to transmit data, and a cache memory coupled to the serial data interface and to the parallel data interface, wherein the cache memory is configured to receive and store data, which have been received in a serial data format via the serial data interface, and to transmit data stored in the cache memory to the parallel data interface.

Abstract: The present invention provides a novel wiring method for LR-DIMM of VLP type that conforms to LR-DIMM technology. The LR-DIMM comprises a plurality of DRAMs mounted on a board, two connectors mounted on the board for receiving data, and a buffer device mounted on the board for redriving data applied to the two connectors to supply the data to the plurality of DRAMs. The buffer device is located near the center of the board on which the two connectors are arranged at both ends thereof, and supplies data from each connector to DRAMs arranged on the opposite side to the connector.

Abstract: A common standard may be used for both dynamic random access memories and non-volatile memories, despite the fact that the non-volatile memory generally needs bidirectional communications to coordinate writing with a memory controller. In one embodiment, a package connector on the non-volatile memory may be used for one function that does not involve communications with the memory controller during reading and may be used for communications with the memory controller during writing. Particularly, those communications during writing may be to indicate to the memory controller when the memory is ready for writing and when the memory is busy so that a write must be deferred until the memory is ready to be written to.

Abstract: A memory with improved write current is provided, including a bit line, a write switch and a control circuit. The write switch is coupled between a voltage source and the bit line, and has a control terminal. Based on a bit line select signal, the control circuit controls the electric conductance of the write switch and discharges/charges the parasitic capacitors of the write switch. The voltage source is turned on after the control terminal of the write switch reaches a pre-determined voltage level.

Abstract: A synchronous memory system configurable in a multiplexed or non-multiplexed mode. In the multiplexed mode, address and data are provided on a shared bus, and accesses to the memory system are qualified by memory access control signals, including an address strobe signal, a counter enable signal and a counter repeat signal. A read/write control signal is maintained for one cycle after the last valid access command to avoid bus turn-around problems. In the multiplexed mode, chip enable and output enable signals may be constantly activated, thereby simplifying associated printed circuit board design. Different ports of the synchronous memory system can be independently configured to operate in either the multiplexed or non-multiplexed mode.

Abstract: A semiconductor device includes a plurality of bonding pads as bonding option, and a test circuit for performing an operation test using particular bonding pads and testing interconnects connecting internal circuits to the remaining bonding pads which are not used in the operation test.

Abstract: A first input buffer receives sequentially inputted first data. A first data selector selectively transfers the first data from the first input buffer in accordance with a data input mode. A first data alignment circuit aligns and outputs the data from the first data selector. A second input buffer receives sequentially inputted second data in accordance with the data input mode. A second data selector selectively transfers the data of the first input buffer or of the second input buffer, in accordance with the data input mode. A first data alignment circuit aligns and outputs the data from the second data selector.

Abstract: A data line layout structure comprises a plurality of first data lines, second data lines, a third data line, a first data line driver, and a second data line driver. The plurality of first data lines are connected to sub mats in a memory mat so that a predetermined number of first data lines are connected to each sub mat. The second data lines are disposed in a smaller quantity than the number of the first data lines so as to form a hierarchy with respect to the first data lines. The third data line is disposed to form a hierarchy with respect to the second data lines, and transfers data provided through the second data lines to a data latch. The first data line driver is connected between the first data lines and the second data lines, and performs a logical ORing operation for output of the first data lines so as to drive a corresponding second data line.

Abstract: A semiconductor device includes plural memory cell blocks, each having a memory array of plural memory cells. Plural control circuits are provided in correspondence with each of the memory cell blocks, for writing information to the memory cell blocks and for reading information written in the memory cell blocks. Plural input/output terminals are for inputting the information to be written and for outputting the information to be read. Plural multiplexers are provided in correspondence with each of the input/output terminals, for conveying the information to be written from the input/output terminals and for conveying the information to be read to the input/.output terminals. A bidirectional transfer type buffer is connected to each connection line between the control circuits and the multiplexers, for selectively conveying information from the control circuits to each of the multiplexers and for selectively conveying information from the multiplexers to each of the control circuits.

Abstract: A semiconductor package facilitates package connection due to different locations of input/output pads in each interlayer die depending on coding information in a multi-chip package. The semiconductor package includes many chips. Each of the chips includes: input/output pads configured to input and output data having a given bandwidth; a decoding pad configured to receive coding information; and a code control unit configured to decode the coding information and to enable an input/output pad positioned at a specific location among the input/output pads according to the decoding result.

Abstract: A semiconductor memory device includes a sense amplifier SA, a pair of bit lines BLT, BLB, a transfer switch SW provided between the sense amplifier SA and the pair of bit lines BLT, BLB, a precharge circuit PC that precharges the sense amplifier SA and the pair of bit lines BLT, BLB at the same potential, and a control circuit CTL. The control circuit CTL sets the transfer switch SW in the off state in the state before data is written or read, and turns on the transfer switch SW when writing or reading data via the pair of bit lines BLT, BLB. With this arrangement, a defective current flowing to the sense amplifier SA can be decreased, even when a word line WL and a bit line BL are shortcircuited.

Abstract: A semiconductor memory device is capable of measuring internal voltages via a shared pad to reduce a chip size. The semiconductor memory device includes a selector and a monitoring pad. The selector is configured to select one of a plurality of internal signals in response to a test signal and output the selected internal signal. The monitoring pad is configured to output an output signal of the selector to an outside of the semiconductor memory device.

Abstract: To perform mask control of data signals without increasing the number of external terminals even when the number of bits in a data mask signal is large, an address input circuit sequentially receives a first address signal, a second address signal, and a first data mask signal supplied to an address terminal in synchronization with transition edges of a clock signal. Namely, the first data mask signal is supplied to the address terminal at a different timing from timing at which the first and second address signals are received. The first address signal, second address signal, and first data mask signal are output, for example, from a controller accessing a semiconductor memory. A data input/output circuit inputs/outputs data via a data terminal and masks at least either of write data to memory cells and read data from the memory cells in accordance with logic of the first data mask signal.

Abstract: A semiconductor device receives a first data mask signal and a second data mask signal. A data mask control unit outputs a data mask control signal by combining a test mode signal with the first data mask signal. A data clock output unit receives a delay locked loop (DLL) clock and outputs a data clock in response to the data mask control signal. A column address enable (YAE) control signal generating unit generates a column address enable control signal to control the enablement of a column address enable signal. The column address enable control signal generating unit generates the column address enable control signal by combining the test mode signal with the second data mask signal.

Abstract: A register file is often used within integrated circuitry to temporarily hold data. Sometimes this data needs to be retained within the register file for a period of time, such as when there is a stall operation. Conventional register files have utilized a hold multiplexor to perform such a stall operation. The multiplexor however inserts a delay that is undesirable in high performance integrated circuitry. The multiplexor is replaced with a tri-state inverter coupled to the global bit line of the register file, which minimizes this additional delay from the register file data access time.

Abstract: In a semiconductor integrated circuit having a register file of a multiport configuration, a first holding circuit 20A is dedicated to a first functional block having one first write port section 21AW and two first read port sections 21AR1 and 21AR2. A second holding circuit 30B is dedicated to a second functional block having one second write port section 31AW and one second read port section 31BR. When it is necessary to read data held in the first holding circuit 20A from the second read port section 31BR, for example, a data interchange operation is performed as follows. After the data of the second holding circuit 30B is latched in a latch circuit 40, the data of the first holding circuit 20A is transferred to the second holding circuit 30B, and then the data of the second holding circuit 30B latched in the latch circuit 40 is transferred to the first holding circuit 20A. Thus, the area necessary to provide a register file is significantly reduced.

Abstract: A novel method and circuit are disclosed for providing an alternate function to a semiconductor device having a normal operating voltage range and an input pin for receiving an input signal of a voltage level within a normal signal voltage range, for selecting an alternate function, whose steps consist of determining, when a voltage is received at the input pin, whether the voltage is within a normal signal voltage range, enabling the performing of a primary function if the signal voltage is within a normal signal voltage range, and initiating an alternate function when the voltage is outside of the normal signal voltage range.

Abstract: A design structure embodied in a machine readable medium to improve performance of an SRAM cell or an SRAM array comprising a plurality of SRAM cells is described. The design structure includes a write circuit for an SRAM cell or an SRAM array. The write circuit includes a gate to switch the write circuit on and off. The cell is supplied by a first, higher voltage. The cell is accessible for read and write operations via at least one bit line connected to a write circuit. The cell is further addressable by at least one word line in order to access it by the bit line. To access the cell for read or write operations, the word line is supplied by the first, higher voltage and the bit line is supplied by a second, lower voltage. During write operations, the write circuit is driven by the first, higher voltage while the bit lines are still at the lower voltage.

Abstract: A semiconductor memory device with adjustable I/O bandwidth includes a plurality of data I/O buffers connected one by one to a plurality of I/O ports, a switch array including a plurality of switches for connecting the plurality of data I/O buffers to a plurality of sense amplifier arrays, and a switch control unit for receiving external control signals to control the data I/O buffer and the plurality of switches.

Abstract: A non-volatile memory device comprises an interface circuit for receiving a plurality of signals. The plurality of signals provides multiplexed address and data and command signals in a serial format. An input buffer stores a plurality of the plurality of signals received in serial format and reconstitutes the address, data and command signals, and has an output. A command circuit receives the output of the input buffer and stores the command signals therefrom. An address circuit receives the output of the input buffer and stores the address signals therefrom. A data buffer circuit receives the output of the input buffer and stores the data signals therefrom. An array of non-volatile memory cells stores data from and provides data to the data buffer in response to address signals from the address decoder. A state machine is connected to the command circuit and controls the array of non-volatile memory cells.

Abstract: In a multi-port register file of a storage unit within a processor, an improved bitcell design for storing a data bit is disclosed. The bitcell comprises a first set of read bitlines having a first load and a second set of read bitlines having a second load, in which the second load is substantially equal to the first load. The bitcell also comprises a signal driving circuit having a first node and a second node. The first node is connected to the first set of read bitlines and the second node is connected to the second set of read bitlines.

Abstract: A method and apparatus for automatically securing non-volatile (NV) storage in an integrated circuit provides improved resistance to code copying and reverse-engineering attacks. External interfaces that provide read access to the NV storage are be disabled, for a predetermined time after a reset or other initialization signal is received. An internal lock state bit or key is checked as well as an external lock prevent indication. If the lock prevent indication is not received, or the internal lock state bit is already set, then the integrated circuit is operated under a locked condition, in which external access to the NV storage values is prevented. The lock prevent indication may be a signal provided during reset of the integrated circuit on a terminal that is used for another purpose after initialization of the integrated circuit.

Abstract: Disclosed is a memory circuit that includes a plurality of columns of bit line pairs, each bit line pair including True and Bar bit lines, between which at least a memory cell is connected; a sense amplifier that has True and Bar terminals and that performs differential amplification; and a switching circuit that selects one of: a straight connection in which the True and Bar bit lines of a selected column bit line pair are connected to the True and Bar terminals of the sense amplifier, respectively; and a cross connection in which the True and Bar bit lines of a selected column bit line pair are connected to the Bar and True terminals of the sense amplifier, respectively.

Abstract: A semiconductor device and a method of controlling the semiconductor device, the semiconductor device including: a memory cell array; a terminal that inputs or outputs storage data stored in the memory cell array, and inputs address data indicating an address in the memory cell array at which the storage data is input or output, the terminal including: a first terminal that inputs a first part of the address data; and a second terminal that inputs a second part of the address data, wherein the second part of the address data is included of the entire remaining portion of the address data not including the first part of the address data; a first internal address line and a second internal address line to which the address data is supplied; and a switch that couples the first part of the address data to one of the first internal address line or the second internal address line in accordance with predetermined switch information, while coupling the second part of the address data to the other one of the first in

Abstract: An orientation detector within a device package is used to establish the device orientation. A host controller coupled to the device supplies a control signal to at least one of the pins on the device during a setup phase. The pin that receives the control signal is used for active signaling during normal operations of the device. Based on the control signal, the orientation detector generates an orientation signal within the device. An analog or digital selector circuit connects the pins to correct internal circuit components according to the device orientation.

Abstract: Primary data caches are connected to a common signal line, and secondary data caches are connected to an I/O data line. While data in the secondary data cache is being output to the I/O data line, the common signal line is used to make determinations for data in flag cells. This increases the speed of a cache read operation.

Abstract: Provided are a semiconductor memory device and a method of generating a chip enable signal thereof. The device includes a plurality of memory chips and an interface chip that are stacked. Each of the memory chips includes a control signal setting unit, which sets input signals applied to first and second input nodes as less significant 2-bit control signals of n-bit control signals, performs a logic AND operation on the less significant 2-bit control signals to generate AND operated signals, performs a logic XOR operation on each of the AND operated signals and each bit signal of more significant n?2-bit input signals applied to third to n-th input nodes to set the n?2-bit control signals, outputs the signal applied to the second input node through a first output node, inverts the signal applied to the first input node to output the inverted signal through a second output node, and outputs the more significant n?2-bit input signals through third through n-th output nodes, respectively.

Abstract: A memory chip is provided, including internal signal/data terminals disposed in a central part of the memory chip and memory cell arrays arranged around the internal terminals to surround the same and electrically connected thereto. A semiconductor device is also provided, having a memory chip and a logic chip stacked with an interposer interposed therebetween. The logic chip has internal signal/data terminals disposed in its central part and electrically connected to the memory chip. The memory chip includes internal signal/data terminals disposed in its central part, and memory arrays arranged around the internal terminals to surround the same and connected thereto. The internal terminals of the logic chip are connected to the internal terminals of the memory chip via through holes (through electrodes) in the interposer.

Abstract: A signal capture system and method is used to capture a data signal using a data strobe signal having a preamble of strobe signal transitions. The system includes a data latch circuit receiving the data signal. The data latch circuit is clocked by transitions of the data strobe signal to capture respective bits of data corresponding to the data signal. A decoder receives a memory command signal and generates a data start signal after a delay period from receiving the memory command signal if the command signal corresponds to a read or a write command. The receipt of read or write command signals is used by a control circuit to identify the start of valid read or write data signals. The control circuit then outputs the captured data signals responsive to the data start signal, thereby ignoring the transitions in the preamble of the data strobe signal.

Abstract: A memory device comprising a memory array having a plurality of memory cells, and a plurality of peripheral devices for reading data out of and writing data into the memory array, the peripheral devices include a first write driver connected to a first input/output line, the first input/output line being associated with a digitline connected to certain of the plurality of memory cells, a first read amplifier connected to the first input/output line, a first input/output device responsive to a first column select signal for connecting the first input/output line to the digitline, a second write driver connected to a second input/output line, the second input/output line being associated with the digitline, a second read amplifier connected to the second input/output line, and a second input/output device responsive to a second column select signal for connecting the second input/output line to the digitline.