Abstract: A semiconductor device includes a CAM cell array that stores the operation setting information as to the semiconductor device, a controller that controls read and write of the CAM cell array, a row decoder, and a column decoder. With this structure, different row addresses are allocated to respective functions of the operation setting information. Accordingly, stress is not caused in the CAM cell array of the unselected functions at the time of programming.

Abstract: Embodiments of the present invention include a data output circuit that can read data in parallel from a plurality of latches in a pipeline circuit. Even-numbered data and odd-numbered data are simultaneously output over a single clock cycle, and are then converted into DDR data and are then serially output. By moving data in this manner, embodiments of the invention can reduce the number of necessary control signals by as much as 50% over conventional data output circuits.

Abstract: A reference current generating circuit generates at least one reference current. A voltage generating circuit generates voltage. A sense amplifier compares a current caused to flow in a memory cell according to the voltage supplied from the voltage generating circuit with the reference current supplied from the reference current generating circuit. A control section is supplied with an output signal of the sense amplifier. When verifying the threshold voltage of the memory cell, the control section causes the voltage generating circuit to generate verify voltage which is the same as readout voltage generated at the time of data readout from the memory cell.

Abstract: A resetable memory is described that includes a memory without reset capability having a data output coupled to a first input of a first multiplexer. A second input of the first multiplexer has a reset value input. A channel select for the first multiplexer is coupled to a resetable storage cell output that indicates whether a storage cell within the memory without reset capability has been written to after a reset or has not been written to after a reset.

Abstract: An internal voltage generator maintains stable level of an internal voltage without increasing physical area. The internal voltage generator includes an active level detector for detecting a level of an internal voltage by comparing the level of the internal voltage and a level of a reference voltage to thereby output a first active driving signal, a first active driver for providing the internal voltage in response to the first active driving signal, a driving time controller for generating a time driving signal activated for a predetermined time, an active driving controller for activating a second active driving signal while the time driving signal is activated and for outputting the first active driving signal as the second active driving signal while the time driving signal is inactivated, and a second active driver for providing the internal voltage in response to the second active driving signal.

Abstract: A memory unit includes width decoding logic enabling data to be accessed in a memory array at different data widths. To improve memory access speed, the memory unit also includes dedicated read output paths for accessing data at the full data width of the memory array. The dedicated read output paths bypass the width decoding logic and provide data from the memory array directly to a data bus, thereby providing improved memory performance when width decoding is not needed. The memory unit can be incorporated in programmable devices and a programmable device configuration can select either the read bypass paths or the width decoding logic. Hardware applications that require width decoding and improved memory access speed can utilize additional programmable device resources outside the memory unit to register the full width data from the memory unit and convert it to a different data width.

Abstract: A memory capable of inhibiting a non-selected cell from disturbance is provided. This memory comprises a bit line, a word line arranged to intersect with the bit line and first storage means connected between the bit line and the word line, for applying voltages of opposite directions to the first storage means of a non-selected memory cell by the same number of times or substantially applying no voltages throughout a read operation and a rewrite operation while varying a rewriting method with a case of reading first data by the read operation and with a case of reading second data by the read operation.

Abstract: A sense mechanism for data bus inversion including a first memory device and an analog adder. The first memory device stores bits of the bus in a previous bus cycle. The analog adder compares the bits of the bus in the previous bus cycle with bits of the bus in a current bus cycle and provides a data inversion signal indicative of whether more than half of the bits of the bus have changed state. The analog adder operates as a bus state change sense device which rapidly evaluates bus state changes from one bus cycle to the next. The data inversion signal is used for selectively inverting the data bits of the bus and indicating bus inversion according to data bus inversion operation, such as according to X86 microprocessor protocol.

Abstract: An integrated circuit device, including first to Nth circuit blocks CB1 to CBN disposed along a first direction D1, when the first direction D1 is a direction from a first side of the integrated circuit device toward a third side which is opposite to the first side, the first side being a short side, and when a second direction D2 is a direction from a second side of the integrated circuit device toward a fourth side which is opposite to the second side, the second side being a long side. The circuit blocks CB1 to CBN include at least one memory block MB which stores image data, and at least one data driver block DB which drives data lines; and the memory block MB includes a memory cell array, a row address decoder RD, and a sense amplifier block SAB.

Abstract: First and second complimentary static random-access-memory cell bit lines are coupled to first and second bit nodes through first and second access transistors controlled by a word line. A first inverter has an input coupled to the first bit node and an output coupled to the second bit node. A second inverter has an input coupled to the second bit node and an output coupled to the first bit node through a first transistor switch. A transistor switch is coupled between the output of a non-volatile memory cell and the first bit node. A control circuit coupled to the gate of the transistor switch. Either the drive level of the non-volatile memory cell is selected to overpower the output of the second inverter or the second inverter is decoupled from the first bit node while the output of the non-volatile memory cell is coupled to the first bit node.

Abstract: N-valued re-circulating latches using n-valued reversible inverters with n>3 are disclosed. Latches using n-valued self-reversing inverters are provided; latches using n-valued universal inverters are provided; and latches using inverters which are not self-reversing or universal are also provided. A latch may use two individually controlled gates. It may also use one individually controlled gate. N-valued latches are provided wherein a state is represented by a signal being an independent instance of a physical phenomenon. A latch not using absence-of-signal as a state is also provided.

Abstract: A semiconductor memory device is disclosed having a layout including, alternating pluralities of memory cell arrays and word line driving blocks arranged next to alternating pluralities of sense amplifier blocks and conjunction blocks, such that each sense amplifier block is located lateral to a corresponding memory cell array, and each conjunction block is located lateral to a corresponding word line driving block. Each sense amplifier block alternately includes one of a supply voltage driver and a ground voltage driver.

Abstract: A data line layout structure comprises a plurality of first data lines, second data lines, a third data line, a first data line driver, and a second data line driver. The plurality of first data lines are connected to sub mats in a memory mat so that a predetermined number of first data lines are connected to each sub mat. The second data lines are disposed in a smaller quantity than the number of the first data lines so as to form a hierarchy with respect to the first data lines. The third data line is disposed to form a hierarchy with respect to the second data lines, and transfers data provided through the second data lines to a data latch. The first data line driver is connected between the first data lines and the second data lines, and performs a logical ORing operation for output of the first data lines so as to drive a corresponding second data line.

Abstract: An address strobe latches a first address. A burst cycle increments the address internally with additional address strobes. A new memory address is only required at the beginning of each burst access. Read/Write commands are issued once per burst access eliminating toggling Read/Write control line at cycle frequency. Control line transition terminates access and initializes another burst access. Write cycle times are maximized thereby allowing increases in burst mode operating frequencies. Logic near sense amplifiers control write-data drivers thereby providing maximum write times without crossing current during I/O line equilibration. By gating global write-enable signals with global equilibrate signals locally at sense amps, local write-cycle control signals are provided and valid for essentially the entire cycle time minus an I/O line equilibration period in burst access memory.

Abstract: A first set of configuration logic is configurable to provide a first port input clock signal for controlling input registers of a first port of a memory block. The first set of configuration logic is also configurable to provide a first port core clock signal for controlling the memory block core. The first port core clock signal can either be the same as the first port input clock signal, or can be controlled independently from the first port input clock signal. A second set of configuration logic is configurable to provide a second port input clock signal for controlling input registers of a second port of the memory block. The second set of configuration logic is also configurable to provide a second port core clock signal for controlling the memory block core. The second port core clock signal can be controlled independently from the second port input clock signal.

Abstract: Discussed are models and methods to create stable binary and non-binary sequential devices including one or more logic functions of which an output signal is uniquely related to an input signal. Methods and apparatus for non-binary single independent input information retaining devices from two logic functions are discussed. Memory elements using the information retaining devices and methods are also discussed. Methods and apparatus for n-valued memory devices including n-valued inverters with feedback are discussed. Binary and non-binary information retaining elements with two logic functions and two independent inputs are discussed. Also discussed are n-valued gating devices that can be combined with n-valued information retaining devices to form n-valued memory devices. Methods and apparatus for single non-binary n-valued logic function latches are discussed. Single non-binary n-valued function methods realizing (n?1)-valued latching methods controlled by an nth state are also discussed.

Abstract: A reference current generating circuit generates at least one reference current. A voltage generating circuit generates voltage. A sense amplifier compares a current caused to flow in a memory cell according to the voltage supplied from the voltage generating circuit with the reference current supplied from the reference current generating circuit. A control section is supplied with an output signal of the sense amplifier. When verifying the threshold voltage of the memory cell, the control section causes the voltage generating circuit to generate verify voltage which is the same as readout voltage generated at the time of data readout from the memory cell.

Abstract: A semiconductor device has a memory cell, decoders, a redundancy circuit and a mode setting circuit. The memory cell array has word lines including a redundant word line, bit lines and memory cells. A row decoder selects the word lines in response to a row address. Further, the row address decoder selects the redundant word line when a replacement signal is received. A column decoder selects the bit lines in response to a column address. A row address redundancy circuit stores a redundant row address. The row address redundancy circuit provides the replacement signal when the redundant row address corresponds to the received address. The mode setting circuit receives a mode signal having a normal mode and a test mode. The mode setting circuit outputs the replacement signal to the row decoder when the mode signal is in the normal mode, and prohibits an output of the replacement signal.

Abstract: An internal voltage generator maintains stable level of an internal voltage without increasing physical area. The internal voltage generator includes an active level detector for detecting a level of an internal voltage by comparing the level of the internal voltage and a level of a reference voltage to thereby output a first active driving signal, a first active driver for providing the internal voltage in response to the first active driving signal, a driving time controller for generating a time driving signal activated for a predetermined time, an active driving controller for activating a second active driving signal while the time driving signal is activated and for outputting the first active driving signal as the second active driving signal while the time driving signal is inactivated, and a second active driver for providing the internal voltage in response to the second active driving signal.

Abstract: A dynamic random access memory has logically identical circuits for providing the same logical control signals. Each set of control signals can have different electrical parameters. One circuit can be optimized for high speed performance, while another circuit can be optimized for low power consumption. The logically identical circuits can include wordline address predecoder circuits, where a high speed predecoder circuit is enabled during a normal operating mode and a slower low power predecoder circuit is enabled for self-refresh operations. During self-refresh operations, the high speed circuit can be decoupled from the power supply to minimize its current leakage.

Abstract: Disclosed is a method for detecting a column fail by controlling a sense amplifier of a memory device. The method includes the steps of enabling a word line of a memory cell of the memory device, adjusting a timing of a high-level driving voltage and a low-level driving voltage applied to the sense amplifier, and detecting an amplification result of the sense amplifier.

Abstract: A bit line over driving control signal generator generates an over driving control signal in response to an over driving signal. The over driving signal is generated in response to an active command. The bit line over driving control signal generator for use in a semiconductor memory device includes a delaying unit for delaying an over driving signal generated in response to an active command to thereby output a delayed over driving signal, a controlling unit for determining whether the delayed over driving signal is outputted without any modification or outputted with being disabled in response to the over driving signal, a read command, and a precharge command, and a pulse width adding unit for adding a predetermined pulse width of the delayed over driving signal to the over driving signal to thereby output a bit line over driving control signal.

Abstract: Embodiments of the present invention include a data output circuit that can read data in parallel from a plurality of latches in a pipeline circuit. Even-numbered data and odd-numbered data are simultaneously output over a single clock cycle, and are then converted into DDR data and are then serially output. By moving data in this manner, embodiments of the invention can reduce the number of necessary control signals by as much as 50% over conventional data output circuits.

Abstract: This invention discloses a write-sensing circuit for semiconductor memories comprising a first and a second local bit-lines (BLs) forming a complementary BL pair, a first and a second global bit-lines (GBLs) forming a complementary GBL pair, and at least one switching circuit controlled by the first and second GBLs and controllably coupling a predetermined power supply source to the first and second BLs, separately, wherein when the first and second GBLs are asserted during a write operation, the switching circuit couples only one of the first and second BLs to the predetermined voltage supply source.

Abstract: In some embodiments, the invention provides a chip with at least one memory circuit that comprises a majority voter circuit with first and second digitally controlled variable delay elements. The first delay element is controlled by data bits that are to be written to a portion of the memory circuit. The majority voter circuit determines if the data bits are to be inverted prior to being written into the memory circuit portion.

Abstract: A memory arrangement includes a plurality of switching elements arranged in the form of a binary tree. The memory elements are supplied with data to be stored by the switching elements coupled to the leaves of the binary tree.

Abstract: A multi-ported register cell. The register cell includes a base cell and a plurality of history cells, each of which is coupled to the base cell. Each of the plurality history cells is coupled to write to the base cell through a first port, and each of the plurality of history cells is coupled to receive data from the base cell through a second port.

Abstract: A semiconductor memory device includes a control signal generator for combining command signals applied from an external portion to generate a test signal; a set/reset signal generator for receiving a mode setting signal applied from an external portion in response to the test signal and generating a first set/reset signal when the mode setting signal is a signal that designates an individual set/reset; a test logic portion for storing and then outputting the mode setting signal in response to the test signal; a set/reset master signal generator for receiving the first set/reset signal to output a set/reset master signal for commonly controlling a test mode of internal blocks of the semiconductor memory device; and a test control signal generator for combining an output signal of the test logic portion to generate a plurality of control signals and generating the set/reset master signal as a plurality of test control signals in response to the plurality of control signals.

Abstract: Multiple matches of words in a content addressable memory are detected by identifying each match of the input word to a word in the memory, and generating a representation of a relationship OR (xi AND xj), where xi=x1, x2, . . . xN?1, xj?xi+1, xi+2, . . . xN, and x1, x2, . . . , xN are the compare results of the individual words in the memory to the input word. A representation of at least one match is identified by generating a representation of a relationship x1 OR x2 OR x3 OR . . . OR xN. The apparatus comprises a hierarchy of logic that carries a general match representation indicating at least one match between the input word and all of the memory words, and a multiple-match representation indicating multiple matches between the input word and the words in the memory.

Abstract: A circuit for generating column path control signals in a semiconductor device is provided. The circuit includes a strobe signal delay unit configured to receive a strobe signal, and delay the received strobe signal for different delay periods, to generate a plurality of respective delayed strobe signals, and a control signal generator configured to receive at least one of the delayed strobe signals, and perform a logical operation to the received signal, to generate a first column path control signal for controlling a column path of the semiconductor device.

Abstract: A semiconductor memory with wordline timing, which links activating a wordline to an isolation signal. The isolation signal is applied to a memory section adjacent the memory section containing the wordline to be activated. Upon such an isolation signal shifting low and isolating the adjacent memory section, a timing circuit triggers a wordline decoder to activate a select wordline. The timing circuit prevents activation of the wordline decoder until the isolation signal is received.

Abstract: In one embodiment, an integrated circuit comprises at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method comprises a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

Abstract: The inventive memory circuit comprises a plurality of memory cells. The memory circuit further comprises a memory access means being controlled by at least one control signal. In addition, a control means for generating the at least one control signal is contained in the memory circuit, with the control means comprising a delay means. The delay means delays a switching of the at least one control signal. The delay time is adjustable in view of the applied supply voltage.

Abstract: A content addressable memory (“CAM”) system includes a plurality of segments arranged in an array, wherein each of the plurality of segments includes a plurality of CAM cells, each of the plurality of CAM cells includes a wordline, a matchline and a sinkline, the wordline being shared by all of the cells in the same row, the matchline and sinkline being shared by all of the cells in the same segment; and a corresponding method of searching within a CAM system includes providing an input word to the CAM system, comparing a portion of the input word in a segment of the CAM system, and propagating a mismatch to obviate the need for comparison in other segments of the CAM system.

Abstract: A method for inline characterization of at least one high speed operating margin of a storage element is provided. An output of at least one latch of the integrated circuit device is transitioned from a first output logic state to a second output logic state. The storage element is accessed at least once in response to the transition of the output of the at least one latch to perform at least one of a write operation and a read operation. A state of at least one output latch is observed corresponding to a state of the storage element. The transitioning, accessing and observing steps are repeated for one or more adjustable parameters to determine at least one high speed operating margin of the storage element.

Abstract: A reference current generating circuit has a plurality of current mirror circuits each having a mirror ratio different from another one, and generates a plurality of reference currents based on a current that flows to the reference memory cells. A plurality of sense amplifiers detects a current that flows to a selected memory cell based on the reference currents generated by the reference current generating circuit.

Abstract: A semiconductor memory with wordline timing, which links activating a wordline to an isolation signal. The isolation signal is applied to a memory section adjacent the memory section containing the wordline to be activated. Upon such an isolation signal shifting low and isolating the adjacent memory section, a timing circuit triggers a wordline decoder to activate a select wordline. The timing circuit prevents activation of the wordline decoder until the isolation signal is received.

Abstract: The address decoder includes: a plurality of decode units each formed by a combinational logic circuit; an inverting circuit which inverts an output of said decode unit; an AND circuit which performs a logical AND operation between an output signal of said decode unit, which has been inverted by said inverting circuit, and another one of said plurality of decode units. This arrangement makes it possible to simplify the circuit construction, to improve the processing speed, and to reduce power consumption.

Abstract: A semiconductor memory device includes a data transfer line for read, a data signal transfer unit, a reset controller, and a data signal transfer unit for write. The data signal transfer unit for read receives a first data signal corresponding to a read command via the data transfer line and outputs the first data signal. The reset controller resets the data transfer line in response to a reset signal. The data signal transfer unit for write receives a second data signal corresponding to a write command, and outputs the second data signal to the data transfer line. The data transfer line is reset in response to the reset signal.

Abstract: A configurable processor architecture uses a common simulation database for multiple processor configurations to reduce the cost of producing customized processor configurations. An unchanging core portion is used in each processor configuration. To support different memory modules, identification signals are provided from the memory modules or an identification module to configure the core portion.

Abstract: In a semiconductor device particularly including a phase change material, the reliability of the read-out operation is improved. In a read-out operation of a phase change memory, a bit line to be read out is precharged in advance with a sufficiently low voltage that can prevent the destructive read operation. In this state, after a word line is activated and a period in which the voltage is sufficiently discharged via a storage element which is in a low resistance state elapses (first read out), charge sharing is performed between the bit line and a read bit line of a sense amplifier which is precharged to a high voltage, and a read-out operation is performed again (second read out). Consequently, the read-out signal amount can be increased while suppressing the read current.

Abstract: A semiconductor memory with wordline timing, which links activating a wordline to an isolation signal. The isolation signal is applied to a memory section adjacent the memory section containing the wordline to be activated. Upon such an isolation signal shifting low and isolating the adjacent memory section, a timing circuit triggers a wordline decoder to activate a select wordline. The timing circuit prevents activation of the wordline decoder until the isolation signal is received.

Abstract: An interface apparatus having a first and a second buffer storage unit, the first buffer storage unit being associated with a first domain and the second buffer storage unit being associated with a second domain, and the buffer storage units being connected to one another for transmitting data. Each of the storage units is of two-stage design and respectively has a first and a second memory, the first and second buffer storage units are connected by unit of connections between the second memory in one buffer storage unit and the first memory in the other buffer storage unit, and data from one domain being written to the first memory and then to the second memory when a transmission operation is no longer pending between the domains.

Abstract: The present invention relates to a clock control circuit, it can reduce power consumption in data input and output operations, and a semiconductor memory device including the clock control circuit, and data input and output operation method of the semiconductor memory device. The clock control circuit according to the present invention can generate an input or output control clock signal only when data are substantially input or output in the data input and output operations. It is thus possible to save unnecessary power consumption.

Abstract: Circuits, methods, and apparatus for filtering signals at a high-speed data interface. One exemplary embodiment is particularly configured to filter a clock signal at the end of a data burst received by a double-data rate memory interface. A clock input port is either connected or disconnected to an input cell. When a data burst is to be received, the clock input port is connected to the input cell. When the data burst concludes, the clock input port is disconnected from the input cell. In a specific embodiment, a signal is received indicating that a data burst is about to begin and the clock input port is connected to the input cell. The signal later changes state indicating that the last data bit is being received. When the last clock edge corresponding to the last data bit is received, the clock input port is disconnected from the input cell.

Abstract: Programmable logic device integrated circuits with adjustable register and memory address decoder circuitry are provided. The integrated circuits contain programmable memory blocks and programmable logic that is configured by a user. Depending on the type of user logic that is implemented by the user, the programmable logic device integrated circuit may have different timing needs for its memory blocks. The adjustable register and memory address decoder circuitry has associated programmable elements that are loaded with configuration data. The configuration data adjusts the timing characteristics of the adjustable register and memory address decoder circuitry to accommodate the user logic. The adjustable register and memory address decoder circuitry may be used to make setup and clock-to-output timing adjustments to optimize a logic design.

Abstract: A semiconductor device of this invention includes a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage, a second circuit for controlling the output from the first circuit by activation or deactivation, and an activation control circuit for activating or deactivating the second circuit in accordance with external input.

Abstract: A data bus is precharged to a precharge voltage before data read operation. In the data read operation, the data bus thus precharged is electrically coupled to the same voltage as the precharge voltage through a selected memory cell. A driving transistor couples the data bus to a power supply voltage (driving voltage) in order to supply a sense current in the data read operation. A charge transfer amplifier portion produces an output voltage according to an integral value of the sense current (data read current) flowing through the data bus, while maintaining the data bus at the precharge voltage. A transfer gate, differential amplifier and latch circuit produce read data based on the output voltage sensed at prescribed timing.

Abstract: A semiconductor memory device includes at least one data transmission block including data I/O pads arranged in a major-axis side of the semiconductor memory device; a command and address transmission block including address and command input pads arranged in at least one minor-axis side of the semiconductor memory device; a global line block, arranged in a center of the semiconductor memory device, for transmitting inputted command and address; and at least one bank area, arranged between the global line block and the data transmission block, each bank area containing plural data I/O blocks located in a side of the data transmission block and plural control blocks located in a side of the global line block.

Abstract: The program circuit according to the present invention can apply a program voltage to the only memory cells which are not programmed during a re-programming operation, thus, the present invention can be prevent a lowering of reliability of the memory cell due to a continued supply of a program bias voltage.