Abstract: The storage layer such as a nitride layer of a nonvolatile memory cell has two storage parts storing separately addressable data, typically respectively proximate to the source terminal and the drain terminal. The applied drain voltage while sensing the data of one of the storage parts depends on the data stored at the other storage part. If the data stored at the other storage part is represented by a threshold voltage exceeding a minimum threshold voltage, then the applied drain voltage is raised. This technology is useful in read operations and program verify operations to widen the threshold voltage window.

Abstract: A memory includes a first bit line, a memory cell coupled to the first bit line, and a read assist device coupled to the first bit line. The read assist device is configured to pull a first voltage on the first bit line toward a predetermined voltage in response to a first datum being read out from the memory cell. The read assist device includes a first circuit configured to establish a first current path between the first bit line and a node of the predetermined voltage during a first stage. The read assist device further includes a second circuit configured to establish a second current path between the first bit line and the node of the predetermined voltage during a second, subsequent stage.

Abstract: Methods and devices for simultaneously verifying or reading multiple states in non-volatile storage are disclosed. Methods and devices for efficiently reducing or eliminating cross-coupling effects in non-volatile storage are disclosed. Methods and devices for efficiently performing reads at a number of voltages to search for the threshold voltage of a memory cell are disclosed. Memory cells on different NAND strings that are read at the same time may be tested for different threshold voltage levels. Memory cells may be tested for different threshold voltages by applying different gate-to-source voltages to memory cells being tested for different threshold voltages. Memory cells may be tested for different threshold voltages by applying different drain to source voltages to the memory cells. Different amounts of compensation for cross-coupling affects may be applied to memory cells on different NAND strings that are read or programmed at the same time.

Abstract: A system includes a controller which is capable of operating at one of a first speed and a second speed slower than the first speed; a semiconductor memory apparatus operating at the first speed; and an input/output device which is connected between the semiconductor memory apparatus and the controller, and configured to control input/output of signals between the controller and the semiconductor memory apparatus, wherein the input/output device operates in a normal mode which corresponds to the input/output of the signals between the controller operating at the first speed and the semiconductor memory apparatus and a test mode which corresponds to the input/output of the signals between the controller operating at the second speed and the semiconductor memory apparatus.

Abstract: A circuit includes a memory array comprising K number of rows. The circuit further including a reference column. The reference column includes M cells of a first cell type configured to provide a first leakage current, K-M cells of a second cell type different from the first cell type, the K-M cells are configured to provide a second leakage current, and a reference data line connected to the cells of the first cell type and the cells of the second cell type. The circuit further includes a sensing circuit configured to determine a value stored in a memory cell of the memory array based on a voltage of the reference data line.

Abstract: A memory includes plurality of word lines extending in a first direction, plurality of bit lines extending in a second direction to intersect with the word lines, and a memory cell array including plurality of memory cells connected to the word lines and the bit lines. Plurality of sense amplifiers include detectors configured to detect data transmitted from the memory cells to sense nodes via the corresponding bit lines, and capacitors connected between the sense nodes and a reference potential, respectively, and are provided to be arranged in the second direction from at least a side of one ends of the bit lines. Each of k capacitors corresponding to k detectors, where k is equal to or greater than 2, has a width corresponding to widths of the k detectors, the k capacitors are arranged in the second direction, and the k detectors are arranged in the first direction.

Abstract: A nonvolatile semiconductor memory device includes a substrate including device regions extending in a first direction, a memory cell array region including a plurality of memory cells disposed on the device regions, bit lines extending in the first direction, a sense amplifier circuit connected to ends of the bit lines, and bit line contacts connecting device regions to bit lines. The memory cell array region includes first to N-th regions where N is an integer of two or more, and a K-th region is located at a greater distance from the sense amplifier circuit than a (K?1)-th region, where K is an arbitrary integer of 2 to N. Contact resistance of the bit line contacts in the K-th region is lower than contact resistance of the bit line contacts in the (K?1)-th region, each device region having constant width in the memory cell array region.

Abstract: According to one embodiment, a semiconductor device includes a first voltage generator, a second voltage generator, a first MOS transistor, and a controller. The first voltage generator outputs a first voltage to a first node. The second voltage generator outputs a second voltage to a second node. The first MOS transistor is capable of short-circuiting the first node and second node. The controller performs a control operation to short-circuit the first node and second node by turning on the first MOS transistor. The controller controls a period in which the first MOS transistor is kept in an on state based on time.

Abstract: Dual-voltage domain memory buffers, and related systems and methods are disclosed. To reduce area needed for voltage level shifters for voltage level shifting, latch banks are provided in a voltage domain of memory buffer read circuitry, separate from the voltage domain of a write data input to the latch banks. A write data input voltage level shifter is disposed between the write data input and the latch banks to voltage level shift write data on the write data input to the voltage domain of the latch banks. In this manner, voltage level shifters are not required to voltage level shill the latch bank outputs, because the latch banks are in the voltage domain of the memory buffer read circuitry. In this manner, semiconductor area that would otherwise be needed for the voltage level shifters to voltage level shift latch bank outputs is not required.

Abstract: An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in off-state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided.

Abstract: Providing increased capacity in heterogeneous storage elements including a method for reading from memory. The method includes receiving a read word from a block of memory cells, where physical characteristics of the memory cells support different sets of data levels. The read word is separated into two or more virtual read vectors. For each of the virtual read vectors, the codebook that was utilized to generate the virtual read vector is identified and a partial read data vector is generated. The generating includes multiplying the virtual read vector by a matrix that represents the codebook. The partial read data vectors are combined into a read message and the read message is output.

Abstract: Provided are a semiconductor device including a fuse and a method of operating the same. The semiconductor device includes a fuse array, a first register unit, and a second register unit. The fuse array includes a plurality of rows and columns. The first register unit receives at least one row of fuse data from the fuse array. Fuse data of the at least one row of fuse data is received in parallel by the first register unit. The second register unit receives the fuse data at least one bit at a time from the first register unit.

Abstract: One embodiment includes a non-volatile memory cell array, and a read unit configured to disable read operation for the non-volatile memory cell array for a time period following writing of data in the non-volatile memory cell array.

Abstract: A memory device includes a plurality of multi-bit memory cells. A plurality of input data bits are encoded according to an error correction code to generate a codeword including a plurality of groups of bits. Respective ones of the plurality of multi-bit memory cells are programmed to represent respective ones of the groups of bits of the codeword. The groups of bits of the codeword may be groups of consecutive bits. In some embodiments, the multi-bit memory cells are each configured to store in bits and a length of the codeword is an integer multiple of m. Data may be read from the multi-bit memory cells in page units or cell units to recover the codeword, and the recovered code word may be decode according to the error correction code to recover the input data bits.

Abstract: An embodiment of a sense amplifier includes a sense circuit and a monitor circuit. The sense circuit is configured to convert a first signal that corresponds to data stored in a memory cell into a second signal that corresponds to the data, and the monitor circuit is configured to indicate a reliability of the second signal. The monitor circuit allows, for example, adjusting a parameter of a memory in which the memory cell is disposed to increase the read accuracy, and may also allow recognizing and correcting an error due to an invalid second signal.

Abstract: A self-timed sense amplifier read buffer pulls down a pre-charged high global bit line, which then feeds data into a tri state write back buffer that is connected directly to the bit line. The bit line provides charge to a ferroelectric capacitor to write a logical “one” or “zero” while by-passing an isolator switch disposed between the sense amplifier and the ferroelectric capacitor. Because the sense amplifier uses grounded bit line sensing, the read buffer will not start pulling down the global bit line until after the sense amplifier signal amplification, which makes the timing of the control signal for this read buffer non-critical. The write-back buffer enable timing is also self-timed off of the sense amplifier. Therefore, the read data write-back to a ferroelectric memory cell is locally controlled and begins quickly after reading data from the ferroelectric memory cell, thereby allowing a quick cycle time.

Abstract: A data transmission circuit includes first to fourth local lines, one or more first bit line sense amplifiers configured to correspond to the first local line, one or more second bit line sense amplifiers configured to correspond to the second local line, one or more third bit line sense amplifiers configured to correspond to the third local line, one or more fourth bit line sense amplifiers configured to correspond to the fourth local line, and a selection unit configured to select some first to fourth bit line sense amplifiers among the first to fourth bit line sense amplifiers in response to a first address in a first mode, and select some first and second bit line sense amplifiers or some third and fourth bit line sense amplifiers among the first to fourth bit line sense amplifiers in response to the first address and a second address in a second mode.

Abstract: Sense amplifiers in a memory may be activated and deactivated. In one embodiment, a processor may include a memory. The memory may include a number of sense amplifiers. Based on a late arriving address bit of an address used to access data from the memory, a sense amplifier may be activated while another sense amplifier may be deactivated.

Abstract: Selecting bins in a memory by receiving a target cost for performing writes at an analog memory that is capable of storing a range of values. Possible bins that may be created in the range of values and a cost associated with each possible bin are determined. Each possible bin includes one or more of the values. A group of bins are identified, the group of bins are among the possible bins with associated costs that are within a threshold of the target cost. A maximum number of bins are selected from the group of bins that have non-overlapping values. The selected bins are stored along with the values of the selected bins utilized to encode and decode contents of the analog memory.

Abstract: Methods and devices for sensing non-volatile storage devices in a way that reduces read disturb are disclosed. Techniques are used to reduce read disturb on memory cells that are neighbors to selected memory cells. For example, on a NAND string, the memory cells that are next to the selected memory cell presently being read may benefit. In one embodiment, when reading memory cells on a selected word line WLn, Vread+Delta is applied to WLn+2 and WLn?2. Applying Vread+Delta to the second neighbor word line may reduce read disturb to memory cells on the neighbor word line WLn+1.

Abstract: A reading device for a memory array is provided. The memory array comprises memory cell columns. The reading device comprises first sensing amplifier groups, a second sensing amplifier group, and an output unit. Each first sensing amplifier groups selectively generates a first sensing output signal. The second sensing amplifier group generates a second sensing output signal. The output unit selectively outputs one of the second sensing output signal and the first sensing output signals according to a page address signal. In a reading operation period, the reading device reads data from a column group to the first sensing amplifier groups. In the reading operation period, when the page address signal indicates an initial input address, initial address data read from the specific column set corresponding to the initial input address among the column group is transmitted to the second sensing amplifier group to generate the second sensing output signal.

Abstract: A process of operating a memory circuit involves RECALLing a state of a volatile memory cell from a nonvolatile memory cell, and inverting an output of the volatile memory cell after every other RECALL.

Abstract: There is disclosed a data reading device in which data of a nonvolatile storage element is reflected in a circuit to be regulated, with a minimum necessary delay width after turning a power on or after reset cancellation, and wrong writing due to a static electricity is prevented. A delay circuit is additionally disposed to output a delayed data reading signal after a signal of turning the power on or a signal of the reset cancellation is generated. A delay time T2 and a static electricity convergence time T1 are set so as to keep a relation of T1<T2.

Abstract: A memory circuit with a word line driver and control circuitry is disclosed. The plurality of word line drivers are coupled to a plurality of word lines. Word line drivers include a CMOS inverter, which can have an input and an output, and a p-type transistor and an n-type transistor. The output of the CMOS inverter is coupled to one of the plurality of word lines. The control circuitry has multiple modes, including at least a first mode to discharge a particular word line of the plurality of word lines via a first discharge path such as at least a first transistor type of the CMOS inverter; and a second mode to discharge the particular word line of the plurality of word lines via a second discharge path such as at least the a second transistor type of the CMOS inverter.

Abstract: A memory includes an array of memory cells with each memory cell coupled to an associated pair of bit lines. Read control circuitry is configured to activate a number of addressed memory cells in order to couple each addressed memory cell to its associated pair of bit lines. Sense amplifier circuitry is then coupled to the bit lines to determine the data value stored in each addressed memory. In a speculative read mode of operation, the sense amplifier circuitry evaluates the differential signals. Error detection circuitry is then used to capture the differential signals on the associated pair of bit lines for each addressed memory cell, and to apply an error detection operation to determine if the differential signals as evaluated by the sense amplifier circuitry had not developed to the necessary degree and, in that event, an error signal is asserted.

Abstract: A semiconductor storage device includes a first cell array including a plurality of memory cells that are connected to a first word line and each of which is connected to each member of a first pair of bit lines. The semiconductor storage device also includes a second cell array including a plurality of memory cells that are connected to a second word line and each of which is connected to each member of a second pair of bit lines. The semiconductor storage device further includes a redundant cell array including a plurality of memory cells that are connected to a word line different from the first and the second word lines and each of which is connected to one member of the first pair of bit lines and to one member of the second pair of bit lines.

Abstract: A burst read control circuit acts as an interface to allow a burst-read capable device to execute burst reads from a page-mode capable memory device. The burst read control circuit coordinates burst read requests from the burst-read capable device and subsequent responses from the page-mode capable memory device by accessing subsequent and contiguous memory locations of the page-mode capable memory device.

Abstract: Embodiments and examples of differential threshold voltage non-volatile memories and related methods are described herein. In one example, a method for providing an integrated circuit can comprise providing a memory cell coupled to a first bitline and to a second bitline, and at least one of (a) providing a read assist mechanism configured to couple to the memory cell via the first and second bitlines, or (b) providing a memory reset mechanism configured to couple to the memory cell via the first and second bitlines. Providing the memory cell can comprise providing a first transistor comprising a first threshold voltage, providing a second transistor comprising a second threshold voltage, and cross-coupling the first and second transistors of the memory cell together. A difference between the first and second threshold voltages can correspond to a logic state of the memory cell. Other embodiments, examples, and related methods are also disclosed herein.

Abstract: A high-density dynamic memory device with compact sense amplifier circuit is described. The memory device achieves high density through the use of a compact sense amplifier circuit that employs a single transistor to sense stored dynamic data. Functionality of the device is enabled by an architecture and method of operation that support a compact sense amplifier circuit. Enabling techniques include sequential sensing of memory columns, a two-pass write operation, a two-step refresh operation, a reference scheme that uses reference data stored in regular memory cells, and the application of digital signal processing to determine sensed data and cancel crosstalk noise.

Abstract: An input-output line sense amplifier configured to drive input data signals over an input-output signal line to an output driver circuit, the input-output line sense amplifier having an output driver stage having a plurality of different programmable output drive capacities to tailor the output drive of the sense amplifier.

Abstract: A method of operating a semiconductor memory device includes performing a first program loop including a first program operation and a first verification operation in order to store a lower bit data of n-bit data in memory cells coupled to a page, performing a subprogram loop for memory cells of an erase state, having threshold voltages lower than a target voltage of a negative potential, so that the threshold voltages of the memory cells of the erase state become higher than the target voltage, and performing a second program loop including a second program operation and a second verification operation in order to store an upper bit data of the n-bit data in the memory cells.

Abstract: A logic circuit for a semiconductor memory device, includes a first logic portion which stores data from a first data signal, and generates a second data signal based on the first data signal, a second logic portion which generates a first address signal and stores an address from the first address signal where data from the second data signal is to be written, and a third logic portion which generates a flag signal which indicates whether the data stored in the first logic portion is valid.

Abstract: A memory device including variable resistance elements comprises a plurality of memory cells configured to store data; a first signal transmission/reception unit and a second signal transmission/reception unit configured to transmit a signal to the memory cells or receive a signal from the memory cells; a first transmission line arranged to couple first ends of the memory cells to the first signal transmission/reception unit; and a second transmission line configured to couple second ends of the memory cells to the second signal transmission/reception unit, wherein a first resistance of a first signal path coupled between the first and second signal transmission/reception units through a first memory cell of the memory cells is substantially equal to a second electrical resistance of a second signal path coupled between a second memory cell and the first and second signal transmission/reception units through a second memory cell of the memory cells.

Abstract: A random access memory circuit includes a plurality of pixels, each having a light sensitive area and a light blocking layer arranged over at least each of the light sensitive areas. In an alternative embodiment, the circuit includes a plurality of memory elements for storing data. Each memory element may comprise a bit node formed between a photodiode, having a light arranged over the photodiode, and a switching element, where data may be stored. The circuit may also include a plurality of reading and writing circuits for reading and writing data to and from the memory cells.

Abstract: A multiplexing circuit includes a plurality of first circuits and a second circuit coupled to outputs of the plurality of first circuits. A first circuit of the plurality of first circuits is configured to receive a first data line as a first input and a clock signal as a second input, and provide an output signal to a first circuit output. After the first circuit is selected for use, the clock signal, a first sub-circuit of the first circuit coupled to the second circuit, and the second circuit are configured to provide a first output logic level to the output signal based on a first data logic level of the first data line; and a second sub-circuit of the first circuit coupled to the first circuit output is configured to provide a second output logic level to the output signal based on a second data logic level of the first data line.

Abstract: A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.

Abstract: A memory system that reduces the memory cycle time of a memory cell by performing an incomplete write operation. The voltage on a storage node of the memory cell does not reach a full supply voltage during the incomplete write operation. The incomplete write operation is subsequently completed by one or more additional accesses, wherein the voltage on the storage node is pulled to a full supply voltage. The incomplete write operation may be completed by: subsequently writing the same data to the memory cell during an idle cycle; subsequently writing data to other memory cells in the same row as the memory cell; subsequently reading data from the row that includes the memory cell; or refreshing the row that includes the memory cell during an idle cycle. One or more idle cycles may be forced to cause the incomplete write operation to be completed in a timely manner.

Abstract: A process-tolerant large-swing sense amplifier with latching capability includes top-array and bottom-array access. The sense amplifier provides improved tolerance to process variation, reduces design complexity, reduces power consumption, and reduces the physical footprint of the circuit. In addition, the sense amplifier provides write-through functionality through the read data bus.

Abstract: A memory access control device including: a bit position information storage unit storing bit position information indicating one or more bit positions in a bit sequence of a predetermined length; a reading unit configured to attempt to read a bit sequence from the range specified by the logical address received by the logical address receiving unit, thereby receiving a first bit sequence from the external memory in units of the predetermined length, the first bit sequence being composed of bits that are larger in number than bits stored in the range specified by the logical address; a bit sequence extracting unit configured to extract one or more bit sequences from the first bit sequence at the one or more bit positions indicated by the bit position information in units of the predetermined length.

Abstract: A semiconductor memory device includes memory cells arranged at regions where word lines and bit lines cross each other; a randomizing and de-randomizing circuit configured to perform a first randomizing operation on data to be programmed to the memory cells, based on a seed value, so as to generate first randomized data; a data reading/writing circuit configured to perform a second randomizing operation on the first randomized data using a data inverting operation so as to generate second randomized data and program the second randomized data to the memory cells; and a control logic configured to control the randomizing and de-randomizing circuit and the data reading/writing circuit.

Abstract: Disclosed herein is a device that includes a first semiconductor chip outputting a read command and a clock signal, a plurality of second semiconductor chips stacked to the first semiconductor chip, and a signal path electrically connected between the first and second semiconductor chips. Each of the second semiconductor chips performs a read operation to read out a data signal stored therein in response to the read command. Each of the second semiconductor chips includes a counter circuit performing a count operation in response to the clock signal to generate a count signal, and an output control circuit outputs the data signal to the signal path when the count signal indicates a predetermined value. The predetermined values of the second semiconductor chips are different from one another.

Abstract: Method and integrated circuit for tracking for read and inverse write back of a group of thyristor-based memory cells is described. The method includes: reading the group of memory cells to obtain read data, and writing back opposite data states for the read data to the group of memory cells. The group of memory cells includes data cells and at least one check cell for check data, where the check data indicates polarity of the read data. The integrated circuit includes a grouping of memory cells of an array of memory cells including data cells and at least one check cell, and sense amplifiers. The at least one check cell is to track inversion/non-inversion status of the data cells associated therewith, and the sense amplifiers are coupled to obtain read information from the grouping and to write back data states opposite of those of the read information.

Abstract: The semiconductor device includes the read circuit which reads data written to a memory cell. The read circuit includes a first transistor, a second transistor, a first switch, and a second switch. A first terminal of the first transistor is electrically connected to a gate of the first transistor, and a second terminal of the first transistor is electrically connected to an output from the read circuit via the first switch. A first terminal of the second transistor is electrically connected to a gate of the second transistor, and a second terminal of the second transistor is electrically connected to the output from the read circuit via the second switch. A channel formation region of the first transistor can be formed using an oxide semiconductor, and a channel formation region of the second transistor can be formed using silicon.

Abstract: A data strobe signal output driver includes a trigger block, a predriver block, and a main driver block. The trigger block is configured to receive a first signal, a second signal, a first clock and a second clock, and to output a predrive signal based thereon. The predriver block is configured to receive the predrive signal, a driver off signal and a termination enable signal, and to output a first main drive signal and a second main drive signal based thereon. The main driver block is configured to output a data strobe signal based on the first and second main drive signals.

Abstract: A circuit may include an array having a number of programmable impedance elements that may be placed into at least two different impedance states in a write operation; and a write circuit that applies temperature varying write conditions to the array in a write operation.

Abstract: A memory array has a memory cell that comprises a storage element storing a logical state at a reduced voltage during at least one functional operation and a write access circuit configured to connect the storage element to at least a first write bit line in response to a write signal on the write word line for writing the logical state to the memory cell. The memory cell further comprises a read access circuit including an input node connected to the storage element and an output node connected to a read bit line of the memory array. The read access circuit is enabled and configured to read the logic state of the storage element in response to a read signal on the read word line. The reduced voltage is reduced relative to an operating voltage of at least one peripheral circuit associated with reading and/or writing of the memory cell.

Abstract: Techniques and circuitry are disclosed for implementing non-volatile storage that exploit bias temperature instability (BTI) effects of high-k/metal-gate n-type or p-type metal oxide semiconductor (NMOS or PMOS) transistors. A programmed bitcell of, for example, a memory or programmable logic circuit exhibits a threshold voltage shift resulting from an applied programming bias used to program bitcells. In some cases, applying a first programming bias causes the device to have a first state, and applying a second programming bias causes the device to have a second state that is different than the first state. Programmed bitcells can be erased by applying an opposite polarity stress, and re-programmed through multiple cycles. The bitcell configuration can be used in conjunction with column/row select circuitry and/or readout circuitry, in accordance with some embodiments.

Abstract: A high speed voltage mode sensing is provided for a digital multibit non-volatile memory integrated system. An embodiment has a local source follower stage followed by a high speed common source stage. Another embodiment has a local source follower stage followed by a high speed source follower stage. Another embodiment has a common source stage followed by a source follower. An auto zeroing scheme is used. A capacitor sensing scheme is used. Multilevel parallel operation is described.

Abstract: Provided is a semiconductor integrated circuit including: an anti-fuse element that electrically connects a first node and a first power supply terminal when data is written and electrically disconnect the first node and the first power supply terminal when data is not written; a first switch circuit that is connected between the first node and a first data line applied with a predetermine first voltage, and enters an off state from an on state according to a first control signal; and a detection part that detects write data of the anti-fuse element according to whether a voltage of the first node is substantially the same as the first voltage or substantially the same as a supply voltage of the first power supply terminal when the first switch circuit enters the off state.

Abstract: Various embodiments address various difficulties with source side sensing difficulties in various memory architectures, such as 3D vertical gate flash and multilevel cell memory. One such difficulty is that with source side sensing, the signal amplitude is significantly smaller than drain side sensing. Another such difficulty is the noise and reduced sensing margins associated with multilevel cell memory. In some embodiments the bit line is selectively discharged prior to applying the read bias arrangement.