Abstract: A computer-implemented method includes receiving probability distribution function (PDF) data corresponding to bit-error-rate (BER) data for each of a plurality of data blocks within a qualified set of NVRAMS, collecting non-exhaustive bit-error-rate data for each of the data blocks on a tested NVRAM to produce non-exhaustive test data for each of the data blocks, determining a plurality of stable data blocks on the tested NVRAM based on the non-exhaustive test data and the probability distribution function data for each of the data blocks, determining, from the non-exhaustive test data, an inferior data block for the stable data blocks on the tested NVRAM, collecting exhaustive bit-error-rate data on the inferior data block to produce exhaustive test data for the tested NVRAM, and routing the tested NVRAM according to the exhaustive test data. A corresponding computer program product and computer system are also disclosed herein.

Abstract: Apparatuses and methods are provided for a high speed writing test mode for memories. An example apparatus includes a memory core, a data terminal coupled to a data receiver, a read buffer coupled between the data terminal and the memory core, and a write buffer coupled between the data receiver and the memory core. The write buffer may include at least a first input coupled to the data receiver, and a second input. While in a test mode, the write buffer may be loaded with data from the second input instead of the first input.

Abstract: A testing device includes a transfer interface, a tester, a first socket group and a second socket group. The first socket group includes a plurality of tested devices coupled in series and the second socket group includes a plurality of tested devices coupled in series. The tester is electrically connected to the socket group via the transfer interface. The transfer interface is configured to merge a first testing signal with a second testing signal to generate a double frequency testing signal. The double-frequency testing signal and a plurality of control signals are provided to the tested devices in the first socket group and the second socket group to perform the testing procedure on the tested devices of a same tested device pair simultaneously, and performing the testing procedure on the tested device pairs sequentially.

Abstract: A scan chain for testing a combinatorial logic circuit includes a first scan chain path of flip-flops connected to the combinatorial logic circuit for functional mode operation during runtime of the combinatorial logic circuit. A second scan chain path of flip-flops is also connected to the combinatorial logic circuit and supports both a shift mode and a capture mode. The second scan chain path operates in shift mode while the first scan chain path is connected to the combinatorial logic circuit for functional mode operation. The second scan chain is then connected to the combinatorial logic circuit when run time is interrupted and operates in capture mode to apply the test data to the combinatorial logic circuit.

Abstract: The present invention provides a system and method of testing CAMs and RAMs. In an exemplary embodiment, the system includes a multiple input signature register (MISR) logically coupled to digital outputs of a CAM, to digital inputs of a RAM, and to digital outputs of an ABIST controller circuit, where the MISR includes a plurality of L1 latch circuits logically coupled to a plurality of L2 latch circuits, a plurality of multiplexer circuits logically coupled to the plurality of L1 latch circuits, a plurality of exclusive or circuits (inner XOR circuits) logically coupled to the plurality of MUX circuits and to the plurality of L2 latch circuits, and at least two XOR circuits (outer XOR circuits), each of the outer XOR circuits logically coupled to one of the inner XOR circuits, to at least one of the MUX circuits, and to at least one of the L2 latch circuits.

Abstract: Disclosed aspects relate to a digital logic circuit. A clock generation circuitry has both a clock generation circuitry output and an inverter circuit to generate a derivative clock signal feature by inverting an array clock signal feature. A scanable storage element has both a scanable storage element output and a set of flip-flops. A memory array is connected with the scanable storage element output and the array clock signal feature. The digital logic circuit is configured to avoid a race violation.

Abstract: Hardware monitors which can be used by a formal verification tool to exhaustively verify a hardware design for a memory unit. The hardware monitors include detection logic to monitor one or more control signals and/or data signals of an instantiation of the memory unit to detect symbolic writes and symbolic reads. In some examples a symbolic write is a write of symbolic data to a symbolic address; and in other examples a symbolic write is a write of any data to a symbolic address. A symbolic read is a read of the symbolic address. The hardware monitors also include assertion verification logic that verifies an assertion that read data corresponding to a symbolic reads matches write data associated with one or more symbolic writes preceding the read.

Abstract: In an embodiment, an integrated circuit may include one or more CPUs, a memory controller, and a circuit configured to remain powered on when the rest of the SOC is powered down. The circuit may be configured to receive audio samples from a microphone, and match those audio samples against a predetermined pattern to detect a possible command from a user of the device that includes the SOC. In response to detecting the predetermined pattern, the circuit may cause the memory controller to power up so that audio samples may be stored in the memory to which the memory controller is coupled. The circuit may also cause the CPUs to be powered on and initialized, and the operating system (OS) may boot. During the time that the CPUs are initializing and the OS is booting, the circuit and the memory may be capturing the audio samples.

Abstract: A system for controlling a solid state drive is disclosed that includes a plurality of NAND memory devices, each NAND memory device further comprising at least one die, a plurality of blocks associated with each of the dies, and a plurality of pages associated with each of the blocks. A pseudo clock system configured to determine a pseudo clock value for each of the NAND memory devices. An effective retention time system coupled to the plurality of NAND memory devices and configured to determine a maximum effective retention time for each of the NAND memory devices as a function of the pseudo clock value for the NAND memory device.

Abstract: A method for detecting a flash memory array includes a plurality of word lines, a plurality of bit lines, and a source line, includes executing a first detection process. The first detection process includes: applying a first positive voltage to a P-type well of the flash memory array; applying a ground to all the word lines; floating the bit lines and the source line; determining whether a leakage current flowing through the P-type well exceeds a leakage threshold; and when the leakage current exceeds the leakage threshold, determining that at least one of the word lines is short-circuited with at least one of the bit lines or the source line.

Abstract: A memory device and a method for test reading and writing thereof are provided. A precharge voltage control circuit is based on the precharge reference voltage to provide a first precharge voltage and a second precharge voltage. A sense amplifier circuit is coupled between a bit line and a complementary bit line and configured to sense data of a memory cell coupled to the bit line, and also coupled to the precharge voltage control circuit to make the bit line and the complementary bit line receive the first precharge voltage and the second precharge voltage respectively, the first precharge voltage and the second precharge voltage are on the same voltage level during the precharge operation, but during a test write sensing period and a test read sensing period after the precharge operation, the voltage levels of the first precharge voltage and the second precharge voltage are different.

Abstract: An optical decoding system is applied to mode conversion of a memory. The optical decoding system includes an optical sensor and a processor. The optical sensor is utilized to sense an intensity of a pattern, and variation of the intensity containing an activation code. The processor is electrically connected with the optical sensor. The processor is adapted to analyze the variation of the intensity and to switch the memory from a normal mode to a configuration mode in accordance with the activation code. Normal operation of the memory is paused while the memory is set in the configuration mode.

Abstract: An input/output (I/O) interface-based signal output method and apparatus. The method includes determining whether a voltage output by a core power supply domain of a first chip is lower than a preset threshold voltage of the first chip, and when the voltage output by the core power supply domain is lower than the threshold voltage, generating a first level signal according to a control function of the first chip over a second chip, where the first level signal is used to enable the second chip to be in an ignoring state after the second chip receives the first level signal, and sending the first level signal to the second chip through an I/O interface, where the ignoring state indicates that the second chip ignores a control signal and a data signal that are sent by the first chip where the method improves stable performance of a chip product.

Abstract: In a detection circuit, inputs correspond to received indications of vector signaling code words received by a first integrated circuit from a second integrated circuit. With four inputs, the circuit compares a first pair to obtain a first difference result and compares a second pair, disjoint from the first pair, to obtain a second difference result. The first and second difference results are then summed to form an output function. A system might use a plurality of such detection circuits to arrive at an input word. The circuit can include amplification, equalization, and input selection with efficient code word detection. The vector signaling code can be a Hadamard matrix code encoding for three input bits. The circuit might also have frequency-dependent gain, a selection function that directs one of the summation function result or the first difference result to the output function, variable gain, and/or a slicer.

Abstract: Systems, methods, and computer program products to perform an operation comprising determining, based on actual coverage point data for a first time interval and expected coverage point data, that a first set of lines of source code associated with the actual and expected coverage point data have not been executed by a system, instantiating, in the system, an action code associated with the first set of lines of source code and an effect code associated with the action code, and determining, based on a final state of the effect code, whether the action code executed correctly in the system.

Abstract: A semiconductor device includes: a non-volatile memory including a normal region, a self-repair region and a redundancy region, each having a plurality of cells; a first boot-up control block suitable for controlling a first boot-up operation to detect defective cells of the normal region and store a defective address in a first latch unit; a self-program control block suitable for controlling a self-program operation to program the defective address stored in the first latch unit into the self-repair region; and a second boot-up control block suitable for controlling a second boot-up operation to read out data of the normal region based on an input address while reading out data of the redundancy region instead of the data of the normal region when data of the self-repair region coincides with the input address.

Abstract: A method for performing a refresh operation on a memory cell efficiently is provided. A semiconductor device including a normal memory cell and a trigger memory cell that determines whether the refresh operation is performed or not is used. Specific data is written to the trigger memory cell, and the data is read from the trigger memory cell at predetermined timing. When the read data agrees with the written specific data, no special operation is performed. When the read data does not agree with the written specific data, a refresh operation is performed automatically.

Abstract: An apparatus for performing an electrical test at a device is described. In one general implementation, an apparatus may include a memory, a receiver, and a processor. The receiver is configured to receive a test signal, convert the test signal into a digital test signal (bit stream) and store the digital test signal in the memory. The receiver identifies when a pre-defined number of bits of the bit stream are available in the memory. The processor is configured to perform a logic operation on the bit stream and a reference signal, generate a test result based on the logic operation, and determine whether the test result satisfies a condition. In some implementations, the processor may be configured to synchronize the digital test signal with the reference signal prior to performing of the logic operation.

Abstract: In a data processing system that comprises a memory 8 comprising N memory banks 11, a memory controller is configured to store one or more N data unit×N data unit arrays of data in the memory 8 such that each data unit in each row of each N×N data unit array is stored in a different memory bank of the N memory banks 11, and such that each data unit in each column of each N×N data unit array is stored in a different memory bank of the N memory banks 11.

Abstract: An embodiment of a method for automated test pattern generation (ATPG), a system for ATPG, and a memory configured for ATPG. For example, an embodiment of a memory includes a first test memory cell, a data-storage memory cell, and a test circuit configured to enable the test cell and to disable the data-storage cell during a test mode.

Abstract: Disclosed is a static random access memory including an assist circuit. More particularly, a static random access memory according to an embodiment of the present disclosure may include a bit cell part including at least one bit cell connected between a first ground voltage node and a second ground voltage node; and a controller including a first transistor configured to control connection between the first ground voltage node and the second ground voltage node, a second transistor configured to float a first ground voltage of the first ground voltage node, and a third transistor configured to float a second ground voltage of the second ground voltage node, wherein the controller controls the first and second ground voltages supplied to the bit cell part using the first, second, and third transistors.

Abstract: A semiconductor device includes a memory circuit and a data output circuit. The memory circuit outputs first internal data having a first burst length in a first mode and outputs the first internal data and second internal data in a second mode. A sum of the first and second internal data has a second burst length. The data output circuit outputs the first internal data as first output data through a first input/output line in the first mode. The data output circuit outputs the first internal data as the first output data through the first I/O line and outputs the second internal data as second output data through a second I/O line in the second mode. The data output circuit controls an internal current according to a logic level combination of the first and second internal data to generate the first and second output data in the second mode.

Abstract: A circuit includes a data line, a first cell in a first row of a memory array, and a second cell in a second row of the memory array. The first cell is electrically coupled with the data line and the second cell is electrically coupled with the data line. The circuit is configured to simultaneously transfer data from the first cell and the second cell to the data line in a first read operation on the first row.

Abstract: A method of detecting random telegraph noise defects in a memory includes initializing a first bit cell of the memory to a first value and reading the first value from the first bit cell. The method also includes writing a second value to the first bit cell and performing back to back read operations on a second bit cell adjacent to the first bit cell, after writing the second value. The method further includes attempting to read the second value from the first bit cell and determining whether the first bit cell is defective based on whether the second value was read from the first bit cell.

Abstract: Various aspects of the disclosed technology relate to using capture-per-cycle test points to reduce test application time. A scan-based testing system includes a plurality of regular scan chains and one or more capture-per-cycle scan chains on which scan cells capture and compact test responses at predetermined observation points per shift clock cycle.

Abstract: A memory device includes an on-board processing system that facilitates the ability of the memory device to interface with a plurality of processors operating in a parallel processing manner. The processing system includes circuitry that performs processing functions on data stored in the memory device in an indivisible manner. More particularly, the system reads data from a bank of memory cells or cache memory, performs a logic function on the data to produce results data, and writes the results data back to the bank or the cache memory. The logic function may be a Boolean logic function or some other logic function.

Abstract: A random code generator includes a memory cell array and a sensing circuit. The memory cell array includes plural antifuse differential cells. The sensing circuit has an input terminal and an inverted input terminal. When a first antifuse differential cell of the memory cell array is a selected cell, a bit line of the selected cell is connected with the input terminal of the sensing circuit and an inverted bit line of the selected cell is connected with the inverted input terminal of the sensing circuit. During a read cycle, the sensing circuit judges a storage state of the selected cell according to a first charging current of the bit line and a second charging current of the inverted bit line, and determines a bit of a random code according to the storage state of the selected cell.

Abstract: An electronic device includes a pulse generator, a signal synthesizer, and a first storage circuit. The pulse generator generates a mode active pulse and a mode pre-charge pulse in response to an operation mode signal. The signal synthesizer synthesizes an active signal and the mode active pulse to generate a synthesized active signal. The signal synthesizer synthesizes a pre-charge signal and the mode pre-charge pulse to generate a synthesized pre-charge signal. The first storage circuit performs an active operation, a read operation, or a pre-charge operation in response to the synthesized active signal, a read signal, and the synthesized pre-charge signal in each of a first read mode and a second read mode.

Abstract: There is provided a communication apparatus. A communication control controls a communication unit so as to connect to one of a plurality of external apparatuses. A transfer unit transfers a data item to an external apparatus to which the communication unit has connected. In a case that a transfer of the data item is failed, a storage control unit stores transfer failure information in which the data item is associated with a transfer-destination external apparatus. In a case that the communication unit has connected to a first external apparatus, a transfer control unit controls a transfer of a data item. If a data item included in the transfer failure information is associated with the first external apparatus, the transfer control unit performs control so as to automatically transfer the data item to the first external apparatus.

Abstract: Several embodiments of memory devices and systems with walking read level calibration are disclosed herein. In one embodiment, a system includes a memory component having at least one memory region and calibration circuitry. The memory region has memory cells that read out data states in response to application of a current read level signal. The calibration circuitry is operably coupled to the at least one memory region and is configured to perform iterative calibrations of the memory region by determining a first read level offset value during a first calibration. A new base read level test signal is determined based on the first read level offset value. During a second calibration using the new base read level test signal, a second read level offset value is determined.

Abstract: In an embodiment, an integrated circuit may include one or more CPUs, a memory controller, and a circuit configured to remain powered on when the rest of the SOC is powered down. The circuit may be configured to receive audio samples from a microphone, and match those audio samples against a predetermined pattern to detect a possible command from a user of the device that includes the SOC. In response to detecting the predetermined pattern, the circuit may cause the memory controller to power up so that audio samples may be stored in the memory to which the memory controller is coupled. The circuit may also cause the CPUs to be powered on and initialized, and the operating system (OS) may boot. During the time that the CPUs are initializing and the OS is booting, the circuit and the memory may be capturing the audio samples.

Abstract: System and method for managing devices comprising a memory store having memory locations, wherein each memory location stores one or more attributes associated with one or more devices. Device manager arranged to execute commands to take an action on the one or more attributes stored in the memory locations, and to receive from the one or more devices values of the corresponding one or more attributes. Synchronizer configured to maintain synchronization between the attributes stored in the memory store and the attributes associated with the devices.

Abstract: A semiconductor system may be provided. The semiconductor system may include a first semiconductor device configured for outputting a command and an address, and inputting/outputting data. The semiconductor system may include a second semiconductor device including first and second registers, wherein first corrected data, which is generated by correcting an error of internal data outputted in a first error correction operation, may be stored in the first register, and second corrected data, which is generated by correcting an error of the internal data outputted in a second error correction operation, may be stored in the second register, based on the command and the address.

Abstract: Apparatuses for error detection and correction for a semiconductor device are described. An example apparatus includes: at least one memory cell array including a plurality of memory cells; and a control circuit that receives read data from the plurality of memory cells, compares the read data with reference data, and further provides an error signal. The control circuit further provides the error signal when a number of bit errors detected is greater than or equal to a predetermined number, and suppresses providing the error signal when the number of bit errors detected is less than the predetermined number.

Abstract: A method performed by a memory chip is described. The method includes receiving an activated chip select signal. The method also includes receiving, with the chip select signal being activated, a command code on a command/address (CA) bus that identifies a next portion of an identifier for the memory chip. The method also includes receiving the next portion of the identifier on a portion of the memory chip's data inputs. The method also includes repeating the receiving of the activated chip select signal, the command code and the next portion until the entire identifier has been received and storing the entire identifier in a register.

Abstract: The apparatus provided may be a memory circuit. The memory circuit includes a memory cell. The memory cell has a bitline. The memory circuit also includes a write driver. The write driver is configured to drive the bitline to write a bit to the memory cell during a write operation. The write driver is also configured to float the bitline to mask the bit during a read operation. The write driver may use NMOS pullup transistors.

Abstract: A memory system, comprising: a first plurality of memory ranks each having multiple memory cells; a second plurality of local controllers each coupled between one or more of the first plurality of memory ranks and a memory controller, the memory controller being configured to provide to a non-target local controller of the second plurality of local controllers, out of a first plurality of chip select (CS) signals, one or more non-target access CS signals disabling target access to one or more non-target memory ranks of the first plurality of memory ranks coupled to the non-target local controller; and the memory controller being further configured to provide to a target local controller of the second plurality of local controllers, out of the first plurality of CS signals, a target access CS signal enabling target access to a target memory rank of the first plurality of memory ranks coupled to the target local controller, and provide to the second plurality of local controllers a command and address (CA) sign

Abstract: Aspects of a method and apparatus for converting an analog input value to a digital output code are provided. One embodiment of the apparatus includes a digital-to-analog converter, a comparator, and control logic circuitry. The digital-to-analog converter is configured to generate an analog reference value based on a received digital reference value. The comparator is configured to compare an analog input value to the analog reference value after expiration of an allotted settling time for the digital-to-analog converter and generate a comparison result indicative a relationship between the analog input value and the analog reference value. The control logic circuitry is configured to select the allotted settling time for the digital-to-analog converter based on a bit position of a digital output code to be determined, and update the bit position of the digital output code based on the comparison result.

Abstract: A system and integrated circuits are provided for determining performance metrics over a plurality of cycles of an input signal using on-chip diagnostic circuitry. The system comprises a trigger generation module configured to generate a trigger signal, and diagnostic circuitry coupled with the trigger generation module. The diagnostic circuitry comprises a memory comprising a plurality of data lines, and a plurality of delay elements, each delay element of the plurality of delay elements connected between consecutive data lines of the plurality of data lines. The diagnostic circuitry is configured to receive at least one input signal, and write, upon receiving the trigger signal, values on the plurality of data lines to the memory, thereby acquiring samples of a plurality of cycles of the input signal.

Abstract: A floating gate setup method, system, and computer program product include, in an initial setup of weights for a floating gate including rows, columns, and a separate input line: comparing a current weight to a desired weight, performing a feedback to the input line to set a voltage to change the floating gate FET VT and the current weight, and checking that the current weight is within a predetermined tolerance of the desired weight.

Abstract: Various embodiments provide a parallel checker to determine whether a device under test (DUT) is functioning properly or outputting erroneous bits. A test pattern or test data is injected into the DUT, and the parallel checker compares output data of the DUT to expected data stored in the parallel checker. The parallel checker determines an error in the event that a bit in the output data does not match in the expected data. The parallel checker is independent of test pattern length and data width at the parallel input of the parallel checker. Accordingly, the parallel checker may be used for multiple different test patterns, such as a PRBS 7, a CJTPAT, CRPAT, etc. Further, the parallel checker provides high-speed synchronization between data received from the DUT and expected test data stored in the parallel checker. In addition, the parallel checker consumes relatively low power and chip area in, for example, a SoC environment.

Abstract: Big data analysis using low power circuit design including storing a plurality of data bits in a plurality of cells on a bitline of a dynamic random access memory (DRAM), wherein each data bit corresponds to a test result, and wherein each of the plurality of cells on the bitline is associated with a different wordline; precharging the bitline to a midpoint voltage between a low voltage corresponding to a low data bit and a high voltage corresponding to a high data bit; activating, at the same time, each wordline associated with each of the plurality of cells on the bitline, wherein activating each wordline causes a voltage to be applied to the bitline from each of the plurality of cells; and measuring a resulting voltage on the bitline to obtain a value corresponding to a percentage of the test results that indicate a passing test result.

Abstract: There is provided a semiconductor integrated circuit device that can generate a unique ID with the suppression of overhead. When a unique ID is generated, the potential of a word line of a memory cell in an SRAM is raised above the power supply voltage of the SRAM, and then lowered below the power supply voltage of the SRAM. When the potential of the word line is above the power supply voltage of the SRAM, the same data is supplied to both the bit lines of the memory cell. Thereby, the memory cell in the SRAM is put into an undefined state and then changed so as to hold data according to characteristics of elements or the like configuring the memory cell. In the manufacture of the SRAM, there occur variations in characteristics of elements or the like configuring the memory cell. Accordingly, the memory cell in the SRAM holds data according to variations occurring in the manufacture.

Abstract: In an embodiment, an integrated circuit may include one or more CPUs, a memory controller, and a circuit configured to remain powered on when the rest of the SOC is powered down. The circuit may be configured to receive audio samples from a microphone, and match those audio samples against a predetermined pattern to detect a possible command from a user of the device that includes the SOC. In response to detecting the predetermined pattern, the circuit may cause the memory controller to power up so that audio samples may be stored in the memory to which the memory controller is coupled. The circuit may also cause the CPUs to be powered on and initialized, and the operating system (OS) may boot. During the time that the CPUs are initializing and the OS is booting, the circuit and the memory may be capturing the audio samples.

Abstract: A memory control device that is capable of making a nonvolatile memory of an information device exhibit the performance thereof certainly. A detection unit detects whether a data writable semiconductor memory is a nonvolatile memory or a volatile memory. A setting unit performs a setting to a volatile memory and performs a different setting to a nonvolatile memory that is detected with the detection unit.

Abstract: In one embodiment, a nonvolatile memory of a component such as a storage drive preserves write data in the event of a write data programming failure in the memory. Write data is preserved in the event of cached writes by data preservation logic in registers and data recovery logic recovers the preserved data and outputs the recovered data from the storage drive. Other aspects are described herein.

Abstract: A storage cluster is provided. The storage cluster includes a plurality of storage nodes within a chassis. The plurality of storage nodes has flash memory for storage of user data and is configured to distribute the user data and metadata throughout the plurality of storage nodes such that the storage nodes can access the user data with a failure of two of the plurality of storage nodes. Each of the storage nodes is configured to generate at least one address translation table that maps around defects in the flash memory on one of a per flash package basis, per flash die basis, per flash plane basis, per flash block basis, per flash page basis, or per physical address basis. Each of the plurality of storage nodes is configured to apply the at least one address translation table to write and read accesses of the user data.

Abstract: To improve test efficiency of addressable test chips, an addressable test chip test system includes a test equipment, a probe card and an addressable test chip, the test equipment connects to the addressable test chip through the probe card to constitute a test path, the test system includes a new type of address register, which can provide two test modes for users according to user's needs. A new type of high density addressable test chip can accommodate DUTs of more than 1000/mm2.

Abstract: Methods and system are provided for determining a maximum number of users of a system or network. A system capacity can be determined by performing a plurality of capacity tests. Each capacity test of the plurality of capacity tests can produce capacity test results that can be used to define a region of the system capacity from which the system capacity can be selected based on network conditions. The system capacity can be used to determine a user capacity of the system which can indicate the maximum number of users that can be active at any given time on the system. The system capacity can be used with a percentage weight of a plurality of user events performed on the system by active users to determine the maximum number of users.

Abstract: The disclosure relates to technology performing a cyclic redundancy check (CRC). Data is divided into a plurality of blocks, each of the plurality of blocks having a fixed size equal to a degree of a generator polynomial. A CRC computation is independently performed on each of the plurality of blocks, and the CRC computation for each of the plurality of blocks is combined by application of an exclusive or (XOR) operation.