Abstract: Described herein are a molecular memory obtained using DNA strand molecular switches and carbon nanotubes, and a manufacturing method thereof. In particular, the nonvolatile memory is manufactured according to an architecture that envisages the use of carbon nanotubes as electrical connectors and DNA strands as physical means on which to write the information. In other words, the nonvolatile memory is made by means of a set of molecular DNA strand switches, the addressing of which is controlled by molecular wires made up of carbon nanotubes.

Abstract: A recording area of a hard disk is managed “unit” by “unit” where a “unit” is constituted by physically continuous recording regions having predetermined size, and usage status of the unit is stored in an allocation unit (AU) management table. Data requiring a real time processing is stored unit by unit. When the usage status of the unit is changed or modified due to the recording or deletion of data, the AU management table is updated and then information indicative of the fact that the AU management table has been updated is recorded. An apparatus where the final change is made is detected at the time the hard disk is inserted or a file system is initialized. And if the apparatus which last made the change adopts the file system which does not use the AU management table, then the table is reconfigured so as to retain the consistency of the AU management table.

Abstract: An interface apparatus having a rotational mechanism for connecting with an interface port in an electronic product is provided. The interface apparatus comprises a body, a connector and a rotational mechanism. The connector is used for connecting with the interface port of an electronic device. The rotational mechanism links up the body with the connector. The rotational mechanism has one to five degrees of freedom of movements. One or a multiple of rotational junctions together provides the degrees of freedom of movements in the rotational mechanism.

Abstract: A method of forming minimally spaced word lines is disclosed. A double exposure technique is employed at the gate formation level. A small trench is defined through gate stack layers by using a tapered etch or spacers to achieve the desired width of the trench. A filler material fills the trench and forms a filler plug. The gate layers adjacent to the trench are then patterned and etched and the filler plug is removed to obtain gate stacks spaced apart by a distance of less than about 400 Angstroms.

Abstract: A memory storage device has a file storage operating system which uses an inode to record and find segments of each data file. The inode includes a plurality of rows. A portion of the rows are written with direct extents pointing to data blocks storing portions of file segments. At least two of the extents point to data blocks having addresses in different logical volumes.

Abstract: In order to obtain a corrected or compensated focus error signal or track error signal, it is proposed to generate primary and secondary scanning beams incident on adjacent tracks of an optical recording medium and to detect the primary and secondary scanning beams reflected from the optical recording medium in order to derive from them primary-beam and secondary-beam focus error signals or primary-beam and secondary-beam track error signals, which are subsequently normalized in order to obtain the compensated focus error signal or track error signal from the normalized primary-beam and secondary-beam error signals by means of weighted combinations. As a result of the normalization, the corrected or compensated focus error signal or track error signal is generated independently of the reflection properties of the respectively scanned track.

Abstract: As part of a memory array, a circuit is provided for altering the drive applied to an access transistor that regulates electrical communication within the memory array. In one embodiment, the circuit is used to alter the drive applied to a sense amp's voltage-pulling transistor, thereby allowing modification of the voltage-pulling rate for components of the sense amp. A sample of test data is written to the memory array and read several times at varying drive rates in order to determine the sense amp's ability to accommodate external circuitry. In another embodiment, the circuit is used to alter the drive applied to a bleeder device that regulates communication between the digit lines of the memory array and its cell plate. Slowing said communication allows defects within the memory array to have a more pronounced effect and hence increases the chances of finding such defects during testing.

Abstract: A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

Abstract: Sensing devices for sensing a programmed state of a floating-gate memory cell are adapted for use in low-power memory devices using supply potentials that can be significantly higher than the maximum potential to be achieved on a local bit line during a sensing operation. Such sensing devices include an input node selectively coupled to a floating-gate memory cell and an output node for providing an output signal indicative of the programmed state of the floating-gate memory cell. Such sensing devices further include a feedback loop coupled between a precharge path and the input node of the sensing device. The feedback loop limits the potential level achieved at the input node of the sensing device, thus limiting the potential level achieved by the bit lines during sensing.

Abstract: A power-up circuit for an SRAM, particularly a loadless 4-T SRAM cell having PMOS access transistors. The power-up circuit disables a current path to the digit lines in an array of SRAM cells during power-up of the SRAM. As a result, the SRAM cells cannot draw power from the digit lines during power-up if voltages on word lines in the array during power-up cause access transistors for the SRAM cells to become conductive.

Abstract: The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.

Abstract: An integrated DRAM memory component has sense amplifiers which, respectively within the framework of the integrated component, are formed from a multiplicity of transistor structures, arranged regularly in cell arrays, and signal interconnect structures with amplification transistors for bit line signal amplification. The amplification transistors are of identical design and they lie opposite one another in pairs in adjacent transistor rows. Signal interconnects, which are associated with the transistor rows and run parallel thereto, supply actuation signals. The signal interconnects for the actuation signals have the same arrangement symmetry as the amplification transistors, which means that the amplification transistors in adjacent transistor rows are in the same signal interconnect proximity.

Abstract: An electronic memory device monolithically integrated in semiconductor has a low pin count (LPC) serial interface. The memory device includes a memory cell array and associated row and column decode circuits. The memory device also includes a bank of T-latch registers to be addressed and accessed in a test mode for serially loading specific test data therein. The serially loading includes activating a test mode of operation by an address storage block for generating a corresponding signal, enabling the bank of T-latch registers in the device to serially receive a predetermined data set, and loading test data into the T-latch registers by using a LPC serial communication protocol.

Abstract: A device according to the invention includes memory cells and a current sense amplifier. It also includes a feedback circuit to adjust a gain of the current sense amplifier. The gain is adjusted depending on relative delays of data stored in different ones of the memory cells to be read on the current sense amplifier.

Abstract: The invention provides a method in which a binary memory cell signal from a; least one memory cell is applied to at least one bit line pair (201t, 201b), the binary memory cell signal from the memory tell is switched through via the bit line pair (201t, 201b) to at least one sense amplifier (202), a binary output signal of the sense amplifier (202) is switched through to a local data line pair (205) as a binary intermediate signal, the binary intermediate signal on the local data line pair (205) is switched through to at least one main data line pair (208) by means of a main data line switching transistor pair (209) in a manner dependent on a row control signal fed via a row control line (210), the main data line switching transistor pair (209) being arranged in the through-plating regions formed between the memory cell arrays.

Abstract: A memory circuit, in particular a psuedostatic memory circuit, is selected by a memory selection signal. The memory circuit has memory areas and a control circuit in order to refresh a memory area of the memory circuit in accordance with a refresh request signal. The control circuit, in a first operating mode, carries out a refresh of the memory area at a refresh address after reception of the refresh request signal by generation of a refresh signal if the memory circuit is deselected or if, in the event of selection of the memory circuit by the memory selection signal, the access to the memory area is ended before the generation of a further refresh request signal. The control circuit, in a second operating mode, interrupts an access to the memory area for the writing and read-out of data and carries out a refresh of the memory area by generation of a refresh signal if the memory circuit is selected and a further refresh request signal is received before the ending of the access to the memory area.

Abstract: The present invention relates to a multi-port register file memory or SRAM including a plurality of storage elements and other circuitry that operate synchronously or asynchronously. The storage elements are arranged in rows and columns and store data. Two read port pairs are coupled to each of the storage elements and a differential sensing device or circuit. The read port is coupled to the storage elements in an isolated manner, enabling a plurality of cells to be arranged in such rows and columns. The sensing device is adapted to sense a small voltage swing. A column mux circuit is coupled to each column and the sensing device. Performance is not degraded unusually as the power supply voltage is reduced due to bus drop or inductive effects.

Abstract: A programming voltage is applied to a first word line coupled to a control gate of a selected ferroelectric memory cell in an array of ferroelectric memory cells. A gate/source voltage equal to the programming voltage is sufficient to reverse polarity of each memory cell. A ground potential is applied to a first program line coupled to a first source/drain region of the selected memory cell and to a first bit line coupled to a second source/drain region of the selected memory cell. A fraction of the programming voltage is applied to other word lines coupled to control gates of non-selected memory cells not associated with the first word line, other program lines coupled to first source/drain regions of non-selected memory cells not associated with the first program line, and other bit lines coupled to second source/drain regions of non-selected memory cells not associated with the first bit line.

Abstract: The flash memory device according to the present invention includes an erase control circuit, used as a state machine, having embodied erase algorithm which can prevent flash memory cells from being over-erased. The erase control circuit, first, checks whether or not threshold voltages of selected cells reach a predetermined pre-verify voltage higher than the maximum value of a target threshold voltage range corresponding to the erased state. When at least one of the selected cells has its threshold voltage higher than the pre-verify voltage, a high voltage generator generates a bulk voltage that is increased step by step by a predetermined voltage level. And, when the selected cells all have threshold voltages equal to or less than the pre-verify voltage, the high voltage generator generates a constant bulk voltage. According to this bulk voltage control scheme, the number of flash memory cells over-erased at the erase operation is reduced reducing the total erase time.

Abstract: A power-up circuit for an SRAM, particularly a loadless 4-T SRAM cell having PMOS access transistors. The power-up circuit disables a current path to the digit lines in an array of SRAM cells during power-up of the SRAM. As a result, the SRAM cells cannot draw power from the digit lines during power-up if voltages on word lines in the array during power-up cause access transistors for the SRAM cells to become conductive.

Abstract: A power-up circuit for an SRAM, particularly a loadless 4-T SRAM cell having PMOS access transistors. The power-up circuit disables a current path to the digit lines in an array of SRAM cells during power-up of the SRAM. As a result, the SRAM cells cannot draw power from the digit lines during power-up if voltages on word lines in the array during power-up cause access transistors for the SRAM cells to become conductive.

Abstract: A fuse option for a dynamic random access memory (DRAM) is provided to selectively slow row address signals when redundant rows of memory cells have been selected for use. The fuse option is blown when a redundant row is used to replace a defective row as identified during manufacture of a DRAM. The fuse is coupled to delay circuitry which has a known delay. When the fuse is blown after detecting a defective row, the delay circuitry is coupled in series with selected portions of a row address strobe (RAS) chain of circuitry used to propagate row address selection signals to the proper rows. This provides extra time needed for row address compare and override circuitry, which is not in series with the delay circuitry.

Abstract: A ferroelectric memory has a memory cell array of memory cells having ferroelectric capacitors, which is divided into a plurality of blocks, a boost power circuit provided in each block of the memory cell array to generate a boost voltage required for operation of the memory, a boost power switch provided between a power line connected to an external power terminal and a power supply terminal of each boost power circuit, and remaining ON during normal operation of the memory, a voltage detector circuit for detecting a drop of voltage level of the power line, and a switch control circuit for turning off the boost power switches in the blocks of the memory cell array excluding the boost power switch in a currently selected block in response to the voltage detector circuit.

Abstract: A small, flat rectangularly shaped electronic circuit card, such as one containing non-volatile memory, has a row of contacts mounted on bottom surfaces of a row of recesses extending along a short edge and an adjacent angled corner. At least one of the recesses opens to the angled corner and the remaining recesses open to the short edge. Two surface contacts are included in at least one of the recesses, while the remaining recesses each contain a single contact.

Abstract: A semiconductor memory device that reduces the probability of the penalties of wirings arising. An address input circuit receives an address signal input. A drive circuit drives a memory array in compliance with the address signal. A signal line connects the address input circuit and the drive circuit. A redundant circuit is located near the drive circuit and substitutes other lines including a redundant line for a defective line in the memory array. A defective line information store circuit stores information showing the defective line. A supply circuit supplies information stored in the defective line information store circuit to the redundant circuit via the signal line. This structure enables to transmit an address signal and information regarding a defective line by a common signal line and to reduce the number of wirings and the probability of the penalties of wirings arising.

Abstract: The productivity of an IC card is to be improved. In a memory card of the type in which a memory body having a wiring substrate and a semiconductor chip mounted on a main surface of the wiring substrate is held so as to be sandwiched in between a first case and a second case, a planar outline of the memory body is smaller than half of a planar outline of the memory card. The memory body is disposed so as to be positioned closer to a first end side as one short side of the memory card with respect to a midline between the first end side and a second end side as an opposite short side of the memory card positioned on the side opposite to the first end side. The other area than the memory body-disposed area in the first and the second case is used as another functional area.

Abstract: The semiconductor memory device includes a non-volatile programmable and electrically erasable memory cell with a single layer of gate material and a floating gate transistor and a control gate, within an active semiconducting area formed in a region of the substrate and delimited by an isolation region. The layer of gate material in which the floating gate is made extends integrally above the active area without overlapping part of the isolation region, and the transistor is electrically isolated from the control gate by PN junctions that will be inverse polarized.

Abstract: A method for retrieving information from a database includes identifying a cylinder. The cylinder includes a plurality of data segments. The method also includes retrieving the plurality of data segments from the cylinder during a single retrieval operation. In addition, the method includes storing the plurality of data segments in a cache.

Abstract: Memory devices and methods are disclosed for selectively reading or writing rows or columns of memory cells in a ferroelectric memory array, wherein sense amps are selectively coupled with row lines or column lines and decoder outputs are coupled with column lines or row lines for row or column memory access operations, respectively.

Abstract: A non-volatile semiconductor memory comprises a memory cell array having a plurality of non-volatile memory cells, at least one reference cell, a read circuit for reading data by applying a first voltage to one of word lines to compare a current flowing through one of bit lines with a current flowing through the reference cell, an erase circuit for erasing the data by applying a voltage to at least two selected from the word lines, the bit lines, the source lines and a semiconductor region including the memory cells, first and second regulators, and an erase verify circuit for detecting whether the erase has finished by applying an output voltage of the first regulator to word lines of the memory cells to be erased, while applying an output voltage of the second regulator to a word line of the reference cell, thereby comparing a cell current of selected one of the memory cells with a cell current of the reference cell.

Abstract: One semiconductor memory device according to the invention comprises a plurality of memory blocks, signal lines respectively connected to the plurality of memory blocks, and a control circuit connected to the signal lines, and the control circuit includes selection signal generator circuits for generating selection signals for selecting one memory block of the plurality of memory blocks by externally input address signals and for outputting the selection signals to the signal lines, and the lengths of the signal lines from the selection signal generator circuits to the respective memory blocks are longer in proportion to distances from the control circuit to the memory blocks. Thereby, parasitic load capacitances of the signal lines connected to the respective memory blocks in the wiring direction can be reduced, and the semiconductor memory device that operates with lower current consumption can be provided.

Abstract: A double pitched array includes isolation devices to divide the array into subarrays, using the same space which is used for bit line twists. This addition allows the one-fourth of the bit line pair which will not be used to propagate signals to not be charged during a memory operation.

Abstract: A semiconductor storage device includes an array region, which includes memory cell array blocks and is connected to a (k: k is a natural number)-number of data input/output lines. A (k+m: m is a natural number)-number of common internal data lines are provided in common to the memory cell array blocks. A (k+m+n: n is a natural number)-number of individual internal data lines are provided to each memory cell array block. An individual line connection circuit is configured to respectively connect a (k+m)-number of the (k+m+n)-number of individual internal data lines to the (k+m)-number of common internal data lines, in accordance with a first defect information signal. A common line connection circuit is configured to respectively connect a k-number of the (k+m)-number of common internal data lines to the k-number of data input/output lines, in accordance with a second defect information signal.

Abstract: A semiconductor memory device has a cell array, first normal elements each defined within the cell array as a group of memory cells arranged in a first direction of the cell array, second normal elements each defined within the cell array as a group of memory cells arranged in a second direction of the cell array, each the second normal element selecting a memory cells in operative association with a corresponding one of the first normal elements, first redundant elements disposed for replacement of defective first normal elements within the cell array, and second redundant elements disposed for replacement of defective second normal elements within the cell array. There are defined within the cell array a first repair regions as a group of first normal elements with permission of replacement by each first redundant element and second repair regions defined within the cell array as a group of second normal elements with permission of replacement by each second redundant element.

Abstract: A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has a first latch and a second latch that are selectively connected to the memory cell array and transfer data each other. A controller controls the reprogramming and retrieval circuits on data-reprogramming operation to and data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches in storing the two-bit four-level data in one of the memory cells in a predetermined threshold level range.

Abstract: A memory circuit contains areas having memory cells. To transfer memory data from/to the memory cells, two-wire local data lines are provided. Each of the local data lines is associated with one of the memory areas and is connected to a two-wire master data line, common to all the memory areas, by a line circuit-breaker. To represent the binary value of data on a local data line, the wires are driven, to first and second logic potentials. Each line circuit-breaker contains switching devices which, if one of the two wires in the local data line is at the second logic potential, autonomously transfer the potential to the associated wire in the master data line, and, if one of the two wires in the master data line is at the second logic potential, autonomously transfer the potential to the associated wire in the local data line.

Abstract: The present invention provides a memory architecture that allows memory checking and replacement of defective words by spare elements already provided on the chip that do not increase the chip size. The method of the invention uses a separate redundant array architecture to provide address translation, so that the redundant entries are represented as the correct entry index that they are replacing.

Abstract: The invention achieves the fine processing of an information writing device, which includes a multilayered element obtained by stacking ferromagnetic/semiconductor/ferromagnetic layers, without increasing the resistivity and power consumption of the device and lowering the reliability thereof. The invention provides an information storage apparatus (1) having write word lines (11), bit lines (21) formed in such a way as to intersect with the write word lines (11) at predetermined intervals, and information storage devices (31) each comprising a multilayered film including a magnetic layer provided in an intersection region, in which each of the write word lines (11) intersects with an associated one of the bit lines (21), between the write word lines (11) and the bit lines (21).

Abstract: A semiconductor memory cell structure and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, an epitaxial post formed on the surface of the substrate over the active region. The epitaxial post has at least one surface extending outwardly from the surface of the substrate and another surface opposite of the surface of the substrate. A gate structure is formed adjacent to at least a portion of all the outwardly extending surfaces of the epitaxial post, and a capacitor formed on an exposed surface of the epitaxial post.

Abstract: A system supports allocating buffer storage for multiple buffers from a common storage area and dynamically reconfiguring the common storage area to shift buffer storage between buffers. A buffer mechanism controls access to buffer storage allocated within the common storage area. An allocation mechanism changes buffer storage allocation by moving one or more boundary pointers after verification that the reconfiguration is valid. The system provides more efficient use of memory and can allow a smaller memory requirement than conventional systems with fixed buffer storage sizes.

Abstract: A CAM may include a plurality of CAM cells. Each CAM cell is configured to generate an output indicating if a corresponding input bit and the bit stored in that CAM cell match. A circuit is configured to logically AND the outputs to generate a hit output. A first compare line generator circuit is configured to generate a first pulse responsive to a clock signal and a data signal and a second compare line generator circuit is configured to generate a second pulse responsive to the clock signal and the complement of the data signal. A CAM may include a circuit configured to generate a pulse indicating a hit in an entry of the CAM and a latch circuit configured to capture the pulse responsive to the first clock signal and configured to clear responsive to the second clock signal. A first CAM may store a value in each entry and may further store a compare result.

Abstract: A method of synchronizing and reconfiguring configurable elements in a programmable unit is provided. A unit has a two- or multi-dimensional, programmable cell architecture (e.g., DFP, DPGA, etc.), and any configurable element can have access to a configuration register and a status register of the other configurable elements via an interconnection architecture and can thus have an active influence on their function and operation. By making synchronization the responsibility of each element, more synchronization tasks can be performed at the same time because independent elements no longer interfere with each other in accessing a central synchronization instance.

Abstract: A system and method for predecoding memory addresses by generating a sequence of predecode signals based on the memory address, providing the sequence of predecode signals as a first set of activation signals, and based on the value of the memory address, either resequencing the sequence of predecode signals and providing the resequenced predecode signals as a second set of activation signals or providing the sequence of predecode signals as the second set of activation signals.

Abstract: An integrated memory contains an addressing unit for addressing memory cells for a memory access on the basis of received addressing signals. An addressing calculation logic unit is connected to the addressing unit. The latter can be activated by a test mode signal for a test operation of the memory. The addressing calculation logic unit receives command signals and address signals for the test operation, calculates therefrom the addressing signals for the memory access and feeds the latter into the addressing unit. After an initialization with the loading of initial parameters, the command signals and address signals for the test operation are applied to the addressing calculation logic unit and read/write operations are carried out by an access controller. An integrated memory with implemented BIST hardware, in the case of which a comparatively high functionality and flexibility during the memory test, are nevertheless made possible.

Abstract: A semiconductor device has multilevel memory cells, each cell storing at least three levels of data each. At least a first data composed of first data bits and a second data composed of second data bits are arranged in order that at least a bit of an N-order of the first bits and a bit of the N-order of the second bits are stored in one of the cells, the N being an integral number. A voltage corresponding to the N-order bits is generated and applied to the one of the cells in response to an address information corresponding thereto. Another semiconductor device has multilevel memory cells arranged so as to correspond to a physical address space, each cell storing 2n levels of data each expressed by n (n≧2) number of bits (X1, X2, . . . , Xn). A logical address is converted into a physical address of the physical address space. Judging is made whether a logical address space including the logical address matches the physical address space.

Abstract: A semiconductor device has multilevel memory cells, each cell storing at least three levels of data each. At least a first data composed of first data bits and a second data composed of second data bits are arranged in order that at least a bit of an N-order of the first bits and a bit of the N-order of the second bits are stored in one of the cells, the N being an integral number. A voltage corresponding to the N-order bits is generated and applied to the one of the cells in response to an address information corresponding thereto. Another semiconductor device has multilevel memory cells arranged so as to correspond to a physical address space, each cell storing 2n levels of data each expressed by n (n≧2) number of bits (X1, X2, . . . , Xn). A logical address is converted into a physical address of the physical address space. Judging is made whether a logical address space including the logical address matches the physical address space.

Abstract: A power-up circuit for an SRAM, particularly a loadless 4-T SRAM cell having PMOS access transistors. The power-up circuit disables a current path to the digit lines in an array of SRAM cells during power-up of the SRAM. As a result, the SRAM cells cannot draw power from the digit lines during power-up if voltages on word lines in the array during power-up cause access transistors for the SRAM cells to become conductive.

Abstract: The present invention discloses a two-phase pre-charge circuit and a standby current erasure circuit thereof which is only activated during the active mode for electrically connecting the source of pre-charge voltage and the complementary bit lines. In the standby mode, the two-phase pre-charge circuit is in a disablement state, thereby the short DC standby current between the complementary bit lines and word lines is erased.

Abstract: An integrated circuit memory device includes a quad-port cache memory device and a higher capacity supplemental memory device. These memory devices operate collectively as a high speed FIFO having fast fall through capability and extended data capacity. The FIFO does not require complex arbitration circuitry to oversee reading and writing operations. The supplemental memory device may be an embedded on-chip memory device or a separate off-chip memory device (e.g., DRAM, SRAM). The quad-port cache memory device utilizes a data rotation technique to support bus matching. Error detection and correction (EDC) circuits are also provided to check and correct FIFO read data. The EDC circuits operate without adding latency to FIFO read operations.

Abstract: A hierarchical movie is provided. A hierarchical movie is a movie that contains one or more embedded movies. Embedded movies may themselves contain embedded movies. Each movie contains zero or more media sequences. Within a hierarchical movie, media sequences that should be edited together may be grouped together using embedded movies. The media sequences of a hierarchical movie may be sequenced during playback based on a different time coordinate system than the time coordinate system that governs any embedded movies. This allows a movie to contain both time-based and time-independent media sequences. Also, the relative timing of events in the movie may vary from performance to performance. The hierarchical movie structure allows movies to be used as user interface controls, and even as field-sensitive databases.