Abstract: A memory device comprises a bit cell comprising a bit storage device, a first word line, a second word line, and a first transfer gate to connect the bit storage device to a bit line. The first transfer gate is configurable to at least four conductance states based on a state of the first word line and a state of the second word line. The memory device further comprises control logic to configure, for an access to the bit cell, the state of the first word line and the state of the second word line based on an access type of the access.

Abstract: A method for reducing leakage current in a memory array comprising: coupling a first distributed header device to the memory array, the first distributed header device is configured for limiting leakage current through the memory array; and coupling a header driver operatively to the first distributed header device for enabling tri-state operation of the first distributed header device, wherein tri-state operation includes sleep mode, wake mode, and retention mode.

Abstract: Some embodiments of the invention include a delay locked loop having a delay line for delaying an input signal. The input signal is generated from a first signal. A delay controller controls the delay line to adjust the timing relationship between the first signal and an internal signal. The delay locked loop also includes cycle control circuitry for controlling the cycle time of the signal entering the delay line and the cycle time of the signal exiting the delay line.

Abstract: A column circuit that amplifies signals read from a sense amplifier array SAA to local input/output lines LIO in sub-amplifiers SAMP to transfer the amplified signals to main input/output lines MIO is provided. A current control circuit IC that can set one of two kinds of currents according to read enable signals RD1, RD2 is provided in each sub-amplifier SAMP. The read enable signals RD1, RD2 are generated at timings corresponding to the number of cycles in burst read operation under control of the timing controller. Current in the current control circuit IC is set to be large by the RD1 in burst read operation cycle just after activation of a memory bank, while current in the current control circuit IC is set to be small by the RD2 in the next and subsequent burst read cycles. Accordingly, expansion of an operation margin or reduction of power consumption can be realized in a semiconductor device including a semiconductor memory such as a DRAM.

Abstract: In sensing a group of cells in a multi-state nonvolatile memory, multiple sensing cycles relative to different demarcation threshold levels are needed to resolve all possible multiple memory states. Each sensing cycle has a sensing pass. It may also include a pre-sensing pass or sub-cycle to identify the cells whose threshold voltages are below the demarcation threshold level currently being sensed relative to. These are higher current cells which can be turned off to achieve power-saving and reduced source bias errors. The cells are turned off by having their associated bit lines locked out to ground. A repeat sensing pass will then produced more accurate results. Circuitry and methods are provided to selectively enable or disable bit-line lockouts and pre-sensing in order to improving performance while ensuring the sensing operation does not consume more than a maximum current level.

Abstract: A charge recycling power gate and corresponding method are provided for using a charge sharing effect between a capacitive load of a functional unit and a parasitic capacitance of a charge recycling means to turn on a switching means between a virtual ground and a ground, the charge recycling power gate including a first transistor, a virtual ground in signal communication with a first terminal of the first transistor, a ground in signal communication with a second terminal of the first transistor, a capacitor having a first terminal in signal communication with a third terminal of the first transistor and a second terminal in signal communication with the ground, and a second transistor having a first terminal in signal communication with the virtual ground and a second terminal in signal communication with the third terminal of the first transistor.

Abstract: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

Abstract: A dual-voltage secure digital (SD) card can be inserted into a legacy host or a newer host. Legacy hosts drive a high voltage such as 3.3 volts onto the power line of the SD bus, while newer hosts drive the power line with a reduced voltage such as 1.8 volts. A flash and voltage controller chip on the SD card has a controller core that operates at the reduced voltage. A voltage regulator on the SD card, or a power management unit inside the controller chip generates an internal power voltage of 1.8 volts from the dual-voltage SD bus power line. The internal power voltage is applied to the controller core and to a voltage converter that generates a flash power voltage from the internal power voltage. The flash power voltage is applied to flash-memory chips on the SD card that operate at the higher voltage.

Abstract: A memory with an internal detection mechanism to detect the presence of either an external component of an external voltage on some no connect pins, allowing a change in the configuration of the internal voltage pumps based on those detections, or which can be used as a standard device as well. The embodiments allow the system to lower its card power consumption depending upon availability of other voltage sources in the system or available components such as inductors to provide internal voltages more efficiently.

Abstract: Categories are established for use in physiological monitoring devices and these categories are prioritized such that data indicative of a critical event self-triggers a communication to an external receiver for the purpose of re-transmitting the critical data for use by a clinician. The categories can be established by the clinician and, if desired, the precise monitored data parameters can be assigned to specific categories. Far-field transmission can be used to send certain stored data to an external receiver, provision is made for externally charging the device batteries.

Abstract: A memory includes a bit cell array including a plurality of word lines and address decode circuitry having an output to provide a predecode value. The address decode circuitry includes a first plurality of transistors having a first gate oxide thickness. The memory further includes word line driver circuitry having an input coupled to the output of the address decode circuitry and a plurality of outputs, each output coupled to a corresponding word line of the plurality of word lines. The word line driver includes a second plurality of transistors having a second gate oxide thickness greater than the first gate oxide thickness. A method of operating the memory also is provided.

Abstract: A driving circuit includes a first switch, a first driver and a second driver. The first switch has a first terminal coupled to a first voltage. The first driver includes a second switch and a third switch. The second switch has a first terminal coupled to a second terminal of the first switch, and a second terminal coupled to a first capacitor. The third switch has a first terminal coupled to the second terminal of the second switch, and a second terminal coupled to a second voltage. The second driver includes a fourth switch and a fifth switch. The fourth switch has a first terminal coupled to the second terminal of the first switch, and a second terminal coupled to a second capacitor. The fifth switch has a first terminal coupled to the second terminal of the fourth switch, and a second terminal coupled to the second voltage.

Abstract: A method and system for operating a DRAM device in either a high power, full density mode or a low power, half density mode. In the full density mode, each data bit is stored in a single memory cell, and, in the half density mode, each data bit is stored in two memory cells that are refreshed at the same time to permit a relatively slow refresh rate. When transitioning from the full density mode to the half density mode, data are copied from each row of memory cells storing data to an adjacent row of memory cells. The adjacent row of memory cells are made free to store data from an adjacent row by remapping the most significant bit of the row address to the least significant bit of the row address, and then remapping all of the remaining bits of the row address to the next highest order bit.

Abstract: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

Abstract: A power supply voltage for a memory on an integrated circuit is dynamically adjusted during the operating of the memory. The operating of the memory includes powering the memory at a supply voltage. A test memory of the integrated circuit is concurrently powered while operating the memory. The test memory and the memory each include bit cells of a first bit cell configuration type. A voltage level of the supply voltage is adjusted, while operating the memory, based on the testing of the test memory. The voltage level is adjusted with external variations to assume a value that guarantees no failed operation of the memory but also accurately minimizes the supply voltage. The system and method may be implemented with any type of memory. The memory and test memory may be physically implemented either separated or interspersed on the integrated circuit.

Abstract: Methods and arrangements to configure power management systems for integrated circuits are provided herein. A group of IC components that are functionally distinct or have mutually exclusive and/or quasi-mutually exclusive, (ME/QME) operating patterns (i.e. alternate or partially overlapping duty cycles) can be powered with a single power cell. An integrated circuit design tool can identified components in an integrated circuit design that have the ME/QME operating patterns. These cells can be collocated in close proximity to each other and power management system components can be placed in this area such that a multiple signal processing cells can share a single power line and a single power cell. Such a configuration can greatly reduce the size of a power management system for an integrated circuit.

Abstract: An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.

Abstract: A standby power supply system in an electronic device including a power-consuming circuit is provided. The standby power supply comprises a signal sensor, a standby power source, a switch circuit, a charge circuit and a power control unit. The signal sensor receives a system-on signal and generates a charging signal and a power-on signal according to the system-on signal. The standby power source provides a first voltage that the signal sensor needs in a standby status. The switch circuit receives the charging signal and then is conducted for a predetermined period. When the switch circuit is conducted and the charge circuit proceeds to charge to a predetermined voltage, the charge circuit turns on the power control unit to receive the power-on signal. The power control unit turns on the operation power supply according to the power-on signal, such that the operation power supply provides an operating voltage to the power-consuming circuit.

Abstract: Embodiments of a system that reduces power consumption by power-gating media decoders are described. During operation of the system, a decoder circuit receives encoded audio data and outputs corresponding decoded audio data to a memory, which is electrically coupled to the decoder circuit. Moreover, control logic, which is electrically coupled to the memory and the decoder circuit, provides commands to the memory and the decoder circuit that selectively disable at least a portion of the memory based on an amount of decoded audio data in the memory.

Abstract: A method for reducing power consumption of transistor-based circuit, the method includes: of receiving a low power mode indication; determining whether to supply power to at least a portion of the transistor-based circuit in response to a reset value of the transistor-based circuit and a state of the transistor-based circuit prior the receiving of the low power mode indication, and selectively providing power to at least a portion of the transistor-based circuit.

Abstract: The energy consumption of a static memory cell, which may be connected to a first bit line and a second bit line of a bit line pair by means of transistors, is reduced in an energy-saving mode of operation by adjusting the potentials on each of the bit lines of the bit line pair such that a potential difference between the gate terminals of the transistors and the bit lines of the bit line pair is reduced in comparison with a normal mode of operation.

Abstract: A mechanism for reducing the amount of power or energy consumed by an SRAM array when the SRAM array is being accessed is provided. Logic is provided that identifies a polarity of a row of memory cells whose data values are to be read. The polarity of the row of memory cells indicates whether a majority of the data values stored in the row of memory cells are logic 1 data values or logic 0 data values. Based on the polarity, selection logic either selects true data values or complement data values of the memory cells. Additional logic is provided in each memory cell for outputting a true data value to a read bit line and outputting a compliment data value to the read bit line based on the polarity.

Abstract: A method of reducing power consumption of a memory is provided. A request is received to access a memory device, including a decoder, a plurality of wordline drivers and a plurality of wordlines. Each wordline is associated with a wordline driver of the plurality of wordline drivers. The request is decoded by a decoder to determine an address associated with the request. A wordline driver of the plurality of wordline drivers is selectively powered to access the address of the memory device, where the wordline driver is associated with a particular wordline of the plurality of wordlines that is related to the address bits, without powering other wordlines of the plurality of wordlines.

Abstract: A packaged multi die device includes at least one memory die. The one or more of the memory dice includes a memory function circuit configured to program or read data, a logic circuit configured to control the program operation and the read operation of the memory function circuit in accordance with an inputted operation command, and a power supplying circuit configured to provide a power corresponding to an operation mode to the memory function circuit, and apply an extra power to the logic circuit.

Abstract: A memory device responsive to standby mode commands for reducing internal operational power on a memory device is disclosed. The memory device includes a circuit for reducing power during a standby mode with the circuit including a reference with at least first and second reference signals. The circuit also includes a switching device for switching between the first and second reference signals in response to the standby mode command and further controls an internal operational power regulator to adjust between normal and low-power outputs further reducing the power to portions of the memory device.

Abstract: An internal voltage generation circuit of a semiconductor device includes: a voltage detecting unit configured to detect a voltage level of an internal voltage output terminal to output a voltage detection signal; an oscillating unit configured to generate a first oscillation signal having a predefined frequency in response to the voltage detection signal; and a pumping unit configured to perform a charge pumping operation in response to the first oscillation signal and the voltage detection signal to output an internal voltage to the internal voltage output terminal, a period of the charge pumping operation being limited within an activation period of the voltage detection signal.

Abstract: A circuit and method efficiently powers a static storage element during a low voltage mode of operation. The static storage element is powered at a first voltage level in an active mode of the static storage element. The static storage element is powered in a low power mode using alternating first and second phases. Powering the static storage element during the first phases in the low power mode includes powering the static storage element at or below a second voltage level, wherein powering the static storage element during the second phases in the low power mode includes powering the static storage element at a higher voltage level than the second voltage level. In another form two modes of low power operation are used where a first mode uses a less power efficient operation than the second mode, but both are more power efficient than a normal power mode.

Abstract: A semiconductor integrated circuit includes a first buffer and a second buffer having different operational timing, a first voltage power supply for generating a first power supply voltage supplied to the first buffer in accordance with the operational timing of the first buffer, and a second voltage power supply for generating a second power supply voltage supplied to the second buffer in accordance with the operational timing of the second buffer.

Abstract: During a stand-by state in which power supply is cut off, a high-voltage power supply control circuit isolates a global negative voltage line transmitting a negative voltage and a local negative voltage line provided corresponding to each respective sub array block from each other and isolates a global ground line and a local ground line transmitting a ground voltage from each other. These local ground line and local negative voltage line are charged to a high voltage level through a high voltage line before cut-off from the corresponding power supply. A leakage current path from a word line to the negative voltage line or the ground line is cut off, so that the word line in a non-selected state can reliably be maintained at a non-selection voltage. Thus, in a low power consumption stand-by mode, data stored in a memory cell can be held in a stable manner.

Abstract: A memory READ command triggered clock synchronization mode turns on a clock synchronization circuit only for memory READ operations. The clock synchronization circuit achieves a signal lock with the reference clock signal in less time than the column address strobe latency. Precise memory READ operations are thus possible without wasting power when such operations are not performed by allowing the clock synchronization circuitry to be turned off.

Abstract: The temperature for multiple devices of a memory module are determined. In one example a memory module includes a printed circuit board, a plurality of memory chips on the printed circuit board, each chip containing a plurality of memory cells and a thermal sensor, and a multiplexer on the printed circuit board, independent of the memory chips, coupled to each of the thermal sensors. A current source is coupled to the multiplexer to provide a current to each one of the thermal sensors, and a voltage detector is coupled to the multiplexer to detect a voltage from each of the thermal sensors when a current is applied. A temperature circuit is coupled to the voltage detector to determine a temperature for each memory chip based on the detected voltage.

Abstract: An internal voltage regulator in an integrated circuit device is always active upon initial start-up and/or power-on-reset operations. The internal voltage regulator protects the low voltage core logic circuits of the integrated circuit device from excessively high voltages that may be present in a particular application. In addition, nonvolatile memory may be part of and operational with the low voltage core logic circuits for storing device operating parameters. Therefore, the internal voltage regulator also protects the low voltage nonvolatile memory from excessive high voltages. Once the integrated circuit device has stabilized and all logic circuits therein are fully function, a bit(s) in the nonvolatile memory may be read to determine if the internal voltage regulator should remain active, e.g., how power operation with a high voltage source, or be placed into a bypass mode for low power operation when the integrated circuit device is powered by a low voltage.

Abstract: Leakage current from a circuit for handling data is reduced using leakage control circuit operable in a leakage reduction mode. The data handling circuit comprises data handling logic operable to receive an input data value and to output and output data value. The data handling circuit also comprises a latch operable to latch the output data value in response to a clock signal having a clock period. Both the leakage control circuitry and the latch are controlled dependent upon the same clock signal and the leakage control circuitry is controlled such that it is in a leakage reduction mode for a time less than the clock period. This approach enables leakage reduction to be provided in circuits which are still operational and is particularly suited to data handling circuits that employ frequency scaling.

Abstract: The present invention relates to a semiconductor memory device having a low power consumption type column decoder and read operation method thereof. In accordance with the semiconductor memory device and read operation method thereof according to the present invention, one of a plurality of decoding units of a column decoder is selectively operated according to a logic value(s) of one of some of bits of a column address signal. It is thus possible to reduce unnecessary switching current.

Abstract: A method of forming a memory cell includes coupling a first transistor between a supply rail of a memory cell and a node operable to accept a supply voltage. The method further includes coupling a second transistor between a ground rail of the cell and a node operable to accept a ground. In one embodiment, the method includes forming the cell to accept selectively applied external voltages, wherein the external voltages are selected to minimize leakage current in the cell. In another embodiment, the method includes forming at least one of the first and the second transistors to have a channel width and/or a threshold voltage selected to minimize a total leakage current in the cell.

Abstract: A voltage booster and a memory structure using the same are provided. When a data storage unit in the memory structure is in normal operation, all voltage pumps in the voltage booster are turned on for boosting a supply voltage. However, when the data storage unit is in standby state, in the voltage booster, some voltage pumps are turned on while other voltage pumps are turned off, for boosting the supply voltage. Accordingly, the standby current and power consumption are reduced and the pump efficiency is improved.

Abstract: Provided is a high voltage generator for a flash memory device including a voltage pumping unit configured to generate a high voltage in response to a pumping clock signal, a transistor having a gate coupled to the high voltage and a source coupled to a program voltage, a voltage distributor coupled to the drain of the transistor, the voltage distributor configured to generate a distributor voltage, and a pumping clock controller configured to compare the distributor voltage to a reference voltage and to generate the pumping clock signal when the high voltage is less than a voltage substantially equal to the program voltage plus the threshold voltage of the transistor.

Abstract: A semiconductor memory device includes an I/O line, a first sense amplifier connected to the first I/O line to amplify a signal applied on the first I/O line in response to a first control signal, a second sense amplifier for amplifying an output signal of the first sense amplifier in response to a second control signal, and a disabling unit for disabling the first control signal in response to an output signal of the second sense amplifier.

Abstract: A reduced-power memory (such as for a cache memory system of a processor or a microprocessor) provides per-sector ground control to advantageously reduce power consumption. Selective power control of a plurality of sectors comprised in the reduced-power memory is responsive to a subset of address bits for accessing the memory. The selective power control individually powers-up a selected one of the sectors in response to an access, and then powers-down the selected sector when the access is complete. The power-up is via a decrease in ground potential from a retention level to an access level. Time needed to vary the ground potential is optionally masked by providing address information used by the selective power control in advance of providing other address information. For example, in a cache, a tag access is overlapped with power-up of a selected sector, thus masking latency of powering up the selected sector.

Abstract: A semiconductor memory device comprises a plurality of memory cells connected to a plurality of word lines grouped in word line sets. Each of the word line sets is connected to a word line enable signal generation unit which stores information indicating whether data has been written to any of the memory cells connected to the word line set. The word line enable signal generation unit controls refresh operations for memory cells connected to the word line set so that only word lines connected to memory cells that have been programmed are refreshed.

Abstract: A memory includes a bit cell array including a plurality of word lines and address decode circuitry having an output to provide a predecode value. The address decode circuitry includes a first plurality of transistors having a first gate oxide thickness. The memory further includes word line driver circuitry having an input coupled to the output of the address decode circuitry and a plurality of outputs, each output coupled to a corresponding word line of the plurality of word lines. The word line driver includes a second plurality of transistors having a second gate oxide thickness greater than the first gate oxide thickness. A method of operating the memory also is provided.

Abstract: A portable electronic device is provided which comprises (a) a memory device (42) equipped with an interface clock which is controlled by a Delay Locked Loop (DLL) such that the memory device is configured to operate in a first mode characterized by a minimum clock rate CRmin; and (b) a controller (38) adapted to cause the memory device to operate in a second mode by disabling the DLL, wherein the second mode is characterized by a nonzero clock rate Rc<CRmin.

Abstract: The present invention provides a semiconductor memory circuit capable of reducing current consumption at non-operation in a system equipped with a plurality of chips that share the use of a power supply, address signals and a data bus. The semiconductor memory circuit has an internal circuit which is capable of selectively performing the supply and stop of an operating voltage via switch means and includes a memory array. An input circuit, which receives a predetermined control signal therein, controls the supply and stop of the operating voltage by the switch means to reduce a DC current and a leak current when no memory operation is done, whereby low power consumption can be realized.

Abstract: A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier.

Abstract: A method for conserving power in a device is disclosed. The method generally includes the steps of (A) storing a plurality of data items in a plurality of bit cells in the device such that a majority of the bit cells holding the data items have a first logic state, wherein reading one of the bit cells having the first logic state consumes less power than reading one of the bit cells having a second logic state; (B) generating a polarity signal by analyzing the data items, the polarity signal indicating that the data items are stored in one of (i) an inverted condition and (ii) a non-inverted condition relative to a normal condition; and (C) driving at least one of the data items onto an external interface of the device in the normal condition during a read operation based on the polarity signal.

Abstract: A leakage current of the MOS transistor of a power control section at a standby time is drastically reduced and the reduction of the consumption power is achieved. A memory module is provided with power control sections. When either of the memory mats is not selected, the power control sections stop the power supply voltage to a non-selected memory mat, a word driver, an input-output circuit, a control circuit and an output circuit. At the standby time of the memory module, the power control section stops a power supply to power control sections, a control circuit, a predecoder circuit, and an input circuit. In this manner, the leakage current of the MOS transistor of the power control sections at the standby time can be drastically reduced.

Abstract: When a memory cell is inactive, a memory cell power supply voltage control circuit decreases the power supply voltage supplied to the memory cell down to a memory cell holding voltage, thereby reducing the leak current flowing in the memory cell. By reducing the leak current, it is possible to reduce the power consumption of a semiconductor memory device and to increase the operating speed thereof. Moreover, the threshold voltage of transistors in the memory cell is kept low, thereby improving the operating characteristics of the semiconductor memory device at low power supply voltages.

Abstract: A memory circuit power management system and method are provided. An interface circuit is in communication with a plurality of memory circuits and a system.

Abstract: A memory circuit power management system and method are provided. In use, an interface circuit is in communication with a plurality of memory circuits and a system. The interface circuit is operable to interface the memory circuits and the system for autonomously performing a power management operation in association with at least a portion of the memory circuits.

Abstract: A semiconductor device capable of stabilizing power supply by suppressing power consumption as much as possible. The semiconductor device of the invention includes a central processing unit having a plurality of units and a control circuit, and an antenna. The control circuit includes a means for outputting, based on a power supply signal including data on power supply from an antenna (through an antenna) or a load signal obtained by an event signal supplied from each of the units, one or more of a first control signal for stopping power supply to one or more of the units, a second control signal for varying a power supply potential supplied to one or more of the units, and a third control signal for stopping supplying a clock signal to one or more of the units.