Abstract: A nonvolatile semiconductor memory device includes three-dimensional cell arrays to reduce the chip size. The cell arrays each having unit cells arranged in row and column directions includes multi-layered unit block cell arrays. Based on the deposition direction of the cell arrays, a unit bank cell array includes the unit block cell arrays arranged in directions X, Y, and Z in a given group. A plurality of unit bank cell arrays are configured to perform read/write operations individually.

Abstract: An embodiment of an integrated circuit comprises a plurality of cells. Each cell comprises a first supply node, a second supply node, a series connection with a first transistor, a second transistor and an electrical element. The series connection is coupled between the first and the second supply node. The electrical element includes a first and a second node. A third transistor is coupled between the first node of the electrical element and a first output node of the cell and a fourth transistor is coupled between the second node of the electrical element and the second output node of the cell. A control terminal of the first, the third and the fourth transistor is coupled to a first control node of the cell and a control terminal of the second transistor is coupled to a second control node of the cell.

Abstract: A semiconductor memory device includes a first row of pads including a first plurality of data input/output (I/O) pads; a second row of pads including a second plurality of data I/O pads; and a first I/O multiplexer associated with the first row of pads and providing first output data only to at least one data I/O pad of the first row of pads, even after a data I/O mode of the semiconductor memory device has changed. The semiconductor memory device also includes a second I/O multiplexer associated with the second row of pads and providing second output data only to at least one data I/O pad of the second row of pads, even after the data I/O mode has changed.

Abstract: Disclosed is an input circuit of a semiconductor memory apparatus. The input circuit includes a first buffer and a second buffer. The first buffer has an input terminal connected with a first input pin for receiving a control signal used in a multi-control mode for controlling an entire memory area by dividing the entire memory area, and an output terminal having a first level according to a control mode signal. The second buffer has an input terminal connected with a second input pin for receiving one of plural signals used in a single control mode for controlling the entire memory area without dividing the entire memory area, and an output terminal having a second level according to the control mode signal.

Abstract: The data output control signal generating circuit includes a delay correction signal generating unit that delays an input signal by a phase difference between a clock and a delay locked loop clock, and latches the delayed signal to generate a plurality of output enable signals. A column address strobe latency control multiplexer selects the output enable signal corresponding to column address strobe latency among the plurality of output enable signals, on the basis of the signal obtained by delaying the input signal by the phase difference between the clock and the delay locked loop clock, and outputs the selected signal as the data output control signal.

Abstract: Some embodiments provide a circuit for accessing stored data in a configurable IC that includes several configurable circuits. The IC also includes several storage circuits. Each storage circuit has (1) several storage elements for storing data for the configurable circuits, and (2) output circuitry for outputting data stored in the storage elements. The output circuitry includes a first set of interconnects for receiving at least a first repeating periodic signal and for periodically outputting data from at least two storage elements to the configurable circuits.

Abstract: A memory device includes a configurable address register having a first set of input buffers coupled to a first set on address bus terminals and a second set of input buffers coupled to a second set of address bus terminals. In a first addressing configuration, address signals are simultaneously applied to the address bus terminals in the first and second sets, and they are simultaneously stored in respective address registers. In a second addressing configuration, a plurality of sets of address signals are sequentially applied to the address bus terminals in only the first set of address bus terminals. Each set of address signals is then stored in a different address register.

Abstract: Memory controllers and methods of optimizing pad sequences thereof are provided. At least two different preferred trace sequences on printed circuit boards for at least one memory device are first provided. One memory controller is then provided to have a core logic circuit, a plurality of input/output (I/O) devices, and a reorderer. The core logic has I/O terminals. Each I/O device on the single chip has a pad. The reorderer is coupled between the core logic circuit and the input/output devices, programmable to selectively connect the input/output devices to the input/output terminals. The reorderer is later programmed to select and connect a portion of the input/output devices to the input/output terminals such that one of the different preferred trace sequences is substantially supported.

Abstract: A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.

Abstract: Embodiments of the present invention include a data output circuit that can read data in parallel from a plurality of latches in a pipeline circuit. Even-numbered data and odd-numbered data are simultaneously output over a single clock cycle, and are then converted into DDR data and are then serially output. By moving data in this manner, embodiments of the invention can reduce the number of necessary control signals by as much as 50% over conventional data output circuits.

Abstract: A phase change memory capable of highly reliable operations is provided. A semiconductor device has a memory array having a structure in which memory cells are stacked including memory layers using a chalcogenide material and diodes, and initialization conditions and write conditions are changed according to the layer in which a selected memory cell is positioned. The initialization conditions and write conditions (herein, reset conditions) are changed according to the operation by selecting a current mirror circuit according to the operation and by a control mechanism of a reset current in a voltage select circuit and the current mirror circuit.

Abstract: A non-volatile memory device comprises an interface circuit for receiving a plurality of signals. The plurality of signals provides multiplexed address and data and command signals in a serial format. An input buffer stores a plurality of the plurality of signals received in serial format and reconstitutes the address, data and command signals, and has an output. A command circuit receives the output of the input buffer and stores the command signals therefrom. An address circuit receives the output of the input buffer and stores the address signals therefrom. A data buffer circuit receives the output of the input buffer and stores the data signals therefrom. An array of non-volatile memory cells stores data from and provides data to the data buffer in response to address signals from the address decoder. A state machine is connected to the command circuit and controls the array of non-volatile memory cells.

Abstract: A dual-port memory circuit includes a plurality of memory sub-blocks. Each of the memory sub-blocks includes a plurality of single-port memory cells, at least one row line, and at least one local bit line, the row line and the bit line being coupled to the memory cells for selectively accessing the memory cells. The memory circuit further includes at least one global bit line connected to the plurality of memory sub-blocks. The global bit line is time-multiplexed during a given memory cycle such that the global bit line propagates data associated with a first port in the memory circuit during a first portion of the memory cycle, and the global bit line propagates data associated with a second port in the memory circuit during a second portion of the memory cycle.

Abstract: A dynamic random access memory (“DRAM”) device includes a pair of internal address buses that are selectively coupled to an external address bus by an address multiplexer, and a pair of internal data buses that are selectively coupled to an external data bus by a data multiplexer. The DRAM device also includes a bank multiplexer for each bank of memory cells that selectively couples one of the internal address buses and one of the internal data buses to the respective bank of memory cells. Select signals generated by a command decoder cause the multiplexers to select alternate internal address and data buses responsive to each memory command received by the command decoder.

Abstract: A technique to increase transfer rate of command and address signals via a given number of command and address pins in each of one or more integrated circuit memory devices during a clock cycle of a clock signal. In one example embodiment, the command and address signals are sent on both rising and falling edges of a clock cycle of a clock signal to increase the transfer rate and essentially reduce the number of required command and address pins in each integrated circuit memory device.

Abstract: A random access memory and a data refreshing method thereof are provided. The random access memory includes a memory array having a plurality of word lines; a control logic unit which is used for outputting a refreshment indicating signal, a thermal sensor which is used for outputting a temperature indicating signal; a refresh counter which is used for outputting a row address counting signal; and a row address decoder which is used for performing a decoding operation on the row address counting signal in response to the refreshment indicating signal and the temperature indicating signal, and simultaneously enabling the plurality of word lines of the memory array based on a result of the decoding operation.

Abstract: A measuring circuit is provided for a memory integrated within a semiconductor device. The measuring circuit includes initializing means and an oscillating loop. The initializing means loadings two complementary values into at least two locations of the memory. The two locations are addressed by a first address and a second address. The oscillating loop comprises a logic circuit for alternatively generating the first address and the second address from data read from the memory so as to successively read data from the first and second memory locations to produce an oscillating signal that has a frequency that depends on internal parameters of the memory. Also provided is a method for qualifying a memory by initializing the memory by loading two complementary values into two locations, and generating an oscillating signal with a frequency that is dependent on internal parameters of the memory.

Abstract: The present invention provide circuits, methods, and apparatus directed to an integrated circuit having a memory interface that is configurable to have one of a multiple different bus widths. The memory interface has a first set of lines and a second set of lines. The first and second set of lines are arranged such that there are multiple locations at which a via may be placed to connect a line of the first set to a line of the second set. The placement of the vias determines the bus width of the memory interface.

Abstract: A non-volatile scalable memory circuit is described, including a bus formed on a substrate that includes active circuitry, metallization layers, and a plurality of high density third dimension memory arrays formed over the substrate. Each memory circuit can include an embedded controller for controlling data access to the memory arrays and optionally a control node that allows data access to be controlled by an external memory controller or by the embedded controller. The memory circuits can be chained together to increase memory capacity. The memory arrays can be two-terminal cross-point arrays that may be stacked upon one another.

Abstract: The semiconductor integrated circuit device includes: a first latch which can hold an output signal of the X decoder and transfer the signal to the word driver in a post stage subsequent to the X decoder; a second latch which can hold an output signal of the Y decoder and transfer the signal to the column multiplexer in the post stage subsequent to the Y decoder; and a third latch which can hold an output signal of the sense amplifier and transfer the signal to the output buffer in the post stage subsequent to the sense amplifier. The structure makes it possible to pipeline-control a series of processes for reading data stored in the non-volatile semiconductor memory, and enables low-latency access even with access requests from CPUs conflicting.

Abstract: Data paths (100 and 900) can be configured to accommodate two or four burst data sequences, with a data value being input/output each half clock cycle. A data sequence can be a fixed order or user-defined order depending upon a selected option. A data input path (100) can reduce power consumption with an enable signal (dinen) timed to activate after data input lines have settled values. A data output path (900) can access output data in a parallel fashion for subsequent output according to a burst sequence. Cycle latencies for such output data can include one clock cycle latency or one and a half-clock cycles. A data output path (900) can also accommodate various clocking modes, including: single clocking with a delay locked loop (DLL) type circuit enabled, single clocking with a delay locked loop (DLL) type circuit disabled, and double clocking, with a phase difference between an input clock and output clock of up to 180°.

Abstract: A memory device includes a pre-charge transistor for connecting/disconnecting the input line of a global data line driver to a supply voltage line. To reduce the flow of current through the pre-charge transistor even in a stand-by state, the pre-charge transistor is turned on when, at a same time, an enabling signal of a page buffer is asserted, and a low voltage functioning mode is selected and the memory device is not in a stand-by state. Alternatively, the memory device may be in a stand-by state but the datum read from the memory is high. The pre-charge transistor is securely turned off in all other cases.

Abstract: A semiconductor memory device has a DLL circuit capable of suppressing EMI without distorting a DLL clock required in high-speed operation. The semiconductor memory device includes a delay locked loop (DLL) circuit configured to be responsive to a system clock to output a DLL clock having a phase that is changed when electromagnetic interference (EMI) is detected, for the DLL clock to have frequencies within a delay locking range, and a data output circuit configured to output data in synchronization with the DLL clock.

Abstract: A non-volatile memory (NVM) having an array of memory cells and a unidirectional multiplexer (UMUX), the UMUX may be comprised of two or more address line ports adapted to receive addressing signals corresponding with elements in the memory array, and a set of switching transistors adapted to switch a supply voltage in accordance with the addressing signal such that current only flows into the array.

Abstract: Method and memory circuits capable of allowing M memory addresses of an N-port memory to be accessed concurrently, wherein N and M both are a natural number, and M is larger than N. Accordingly, a higher-order multi-port memory can be replaced by a lower-order multi-port or single-port memory. Consequently, smaller chip area or higher data access rate can be achieved.

Abstract: Methods and systems are provided that allow the method of access to one or more memory banks to be performed using serial access, or using parallel access. In serial mode, each link operates as an independent serial link. In contrast, during serial mode, the links operate in common as a parallel link. Where input and output controls are received independently for each link for serial mode, a single set of input and output controls is used in common by all of the links during parallel mode.

Abstract: A method of reading sequential pages of flash memory from alternating memory blocks comprises loading data from a first page into a first primary data cache and a second page into a second primary data cache simultaneously, the first and second pages loaded from different blocks of flash memory. Data from the first primary data cache is stored in a first secondary data cache, and data from the second primary data cache is stored in a second secondary data cache. Data is sequentially provided from the first and second secondary data caches by a multiplexer coupled to the first and second data caches.

Abstract: The present invention provides memory system architectures developed to increase the capacity of memory systems. Typically applications including the main memory of computers. Memory systems of the present invention can achieve capacities larger than prior art systems by one or two orders of magnitudes without significant degradation in performance while using system interfaces that are compatible with existing memory systems with no or minimal modifications.

Abstract: One embodiment of the present invention includes a column multiplexer for accessing data from a memory array comprising an output node having a logic state that is based on a logic state of a control node, and column elements, each comprising a first pair of series connected switches controlled by a column select signal and a bit line signal associated with data stored in a plurality of memory cells. The first pair of switches is configured to set the control node to a logic low state based on a logic state of the bit line signal. The column elements each also comprise a second pair of series connected switches controlled by the bit line signal and a complement of the column select signal. The second pair of switches is configured to set the control node to a logic high state based on the logic state of the bit line signal.

Abstract: Disclosed is a semiconductor device in which In case a data group output from a first output pin in a first word configuration is output from the first output pin and a second output pin in a second word configuration, and a data group output from a third output pin in a first word configuration is output from the third output pin and a fourth output pin in a second word configuration, the second output pin is arranged adjacent to the first output pin, and the fourth output pin is arranged adjacent to the third output pin.

Abstract: A semiconductor memory device includes a plurality of banks a plurality of banks stacked in a column direction, a global data line corresponding to the plurality of banks and a common global data line driving unit for multiplexing data on a plurality of local data lines corresponding to each of the banks to transmit the multiplexed result to the global data line.

Abstract: A semiconductor memory device includes a clock period detector, a column address enable signal generator, and a multiplexing circuit. The clock period detector detects a period of an external clock in response to a pulse width information signal having a pulse width corresponding to that of the external clock. The column address enable signal generator generates a column address enable signal activated in response to a column access signal. The multiplexing circuit multiplexes points of time of inactivation of the column access signal in response to the detected signal outputted from the clock period detector.

Abstract: A multi-port semiconductor memory device having variable access paths and a method therefore are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.

Abstract: A design structure embodied in machine readable medium used in a design process includes a system for implementing a memory column redundancy scheme. The system comprises a core array having a plurality of columns and a redundancy column each configured for reading or writing a bit of information and circuitry for steering around a defective column in the core array, wherein the circuitry includes one column multiplexor, which results in having the memory column redundancy scheme include one multiplexing stage.

Abstract: A domino read SRAM capable of writing multiple wordlines simultaneously. A read/write multiplexer may allow conventional, single-wordline selection during a read operation, while allowing external logic, such as an ABIST controller, to enable multiple wordlines during a write operation.

Abstract: Methods and apparatus are disclosed, such as those involving a solid state memory device. One such method includes selecting a plurality of memory cells in a memory array. States of a plurality of data bits stored in the selected plurality of memory cells are determined. In determining the states of the plurality of data bits, a portion of the plurality of data bits are sensed faster than others. The plurality of data bits are sequentially provided as an output. In one embodiment, the portion of the plurality of data bits includes the first bit of the sequential output of the memory device.

Abstract: A multi-port semiconductor memory device and a signal input/output method therefore are provided. In one embodiment, the multi-port semiconductor memory device includes a plurality of different input/output ports and a memory array. The memory array has at least one memory region that is accessed by using different input/output ports. The different input/output ports include a first input/output port through which a first signal is input/output and a second input/output port through which a second signal different from the first signal is input/output. The memory region is divided into a plurality of memory regions. The invention provides effects of reducing the number of test pins and improving test efficiency.

Abstract: A circuit and method for providing temperature data indicative of a temperature measured by a temperature sensor. The circuit is coupled to the temperature sensor and configured to identify for a coarse temperature range one of a plurality of fine temperature ranges corresponding to the temperature measured by the temperature sensor and generate temperature data that is provided on an asynchronous output data path.

Abstract: This invention is about a system for diagnosing memory cells in a memory module. A first multiplexer module selectively connects a diagnosis signal in response to a multiplexer control signal to a data line associated with a predetermined memory cell. A second multiplexer module connects the data line to the predetermined memory cell via the bit line in response to a bit selection signals. Similarly, a complement diagnosis signal may be connected to a predetermined memory cell via the complement data line and bit line through the same control and bit select signals. A pair of access pads are provided for passing the diagnosis signal and the complement diagnosis signal for external accessing.

Abstract: A delay selection circuit for use in a semiconductor memory device prevents a tAA from increasing at a read operation due to a delayed command type of signal. The delay selection circuit includes a delay line unit, a power supply voltage detection unit and a path selection unit. The delay line unit has two delay lines for delaying a command type of signal by different delay amounts. The power supply voltage detection unit detects a voltage level of a power supply voltage. The path selection unit selects one of each output of the two delay lines according to an output of the power supply voltage detection unit.

Abstract: A memory controller receives a logical address of a data unit in a memory and scrambles the logical address according to an address scrambling scheme. The address scrambling scheme maps the logical address to time-multiplexed output of physical address pins of the memory controller. At least one of the physical address pins, which is to be mapped in a time phase in a baseline design, is to be unmapped in a corresponding time phase if a dimensional parameter of the memory changes. The logical address comprises row address bits and column address bits. All of the even row address bits may be mapped in a time phase for outputting the row address, and all of the odd row address bits may be mapped in another time phase for outputting the row address. Thus, configuration flexibility of the memory controller is improved.

Abstract: An address switch circuit receives a row address signal supplied to a first address terminal group and a column address signal supplied to a second address terminal group. Further, the address switch circuit receives the row address signal supplied to the second address terminal group and thereafter receives the column address signal supplied to the second address terminal group and supplies the received row address signal and the received column address signal to the row decoder and the column decoder during a second operation mode. The number of semiconductor memories that are tested at once can be increased by executing an operation test of the semiconductor memories in the second operation mode. In addition, it becomes possible to test a semiconductor memory using test assets for other semiconductor memories. Consequently, the test efficiency can be improved, and the test cost can be reduced.

Abstract: Various embodiments of the present invention include methods for determining nanowire addressing schemes and include microscale/nanoscale electronic devices that incorporate the nanowire addressing schemes for reliably addressing nanowire-junctions within nanowire crossbars. The addressing schemes allow for change in the resistance state, or other physical or electronic state, of a selected nanowire-crossbar junction without changing the resistance state, or other physical or electronic state, of the remaining nanowire-crossbar junctions, and without destruction of either the selected nanowire-crossbar junction or the remaining, non-selected nanowire-crossbar junctions. Additional embodiments of the present invention include nanoscale memory arrays and other nanoscale electronic devices that incorporate the nanowire-addressing-scheme embodiments of the present invention.

Abstract: Some embodiments of the invention include a delay locked loop having a delay line for delaying an input signal. The input signal is generated from a first signal. A delay controller controls the delay line to adjust the timing relationship between the first signal and an internal signal. The delay locked loop also includes cycle control circuitry for controlling the cycle time of the signal entering the delay line and the cycle time of the signal exiting the delay line.

Abstract: A dual-port memory circuit includes a plurality of memory sub-blocks. Each of the memory sub-blocks includes a plurality of single-port memory cells, at least one row line, and at least one local bit line, the row line and the bit line being coupled to the memory cells for selectively accessing the memory cells. The memory circuit further includes at least one global bit line connected to the plurality of memory sub-blocks. The global bit line is time-multiplexed during a given memory cycle such that the global bit line propagates data associated with a first port in the memory circuit during a first portion of the memory cycle, and the global bit line propagates data associated with a second port in the memory circuit during a second portion of the memory cycle.

Abstract: Disclosed is a pseudo static random access memory (PSRAM) and a method for operating the same. The PSRAM includes a multi-bit control register and a multiplexer circuit operatively coupled to the multi-bit control register. The multi-bit control register has a first set of bits reserved for a page control mode of the PSRAM and a second set of bits reserved for a bus control mode of the PSRAM. The multiplexer circuit activates one of the page control mode and the bus control mode of the PSRAM based on a logic level of an address bit inputted to the multiplexer circuit.

Abstract: A memory chip suitable for use in a daisy chain of memory chips. The memory chip receives an address/command word on a first input, determines if the address command word is directed to the memory chip; if so, the memory chip accesses an array on the memory chip. If not, the memory chip re-drives the address/command word on a first output. Write data is received as part of the address/command word or from a first data bus port. A bus clock is received and is used to receive and transmit information on the first input, the first output, the first data bus port and the second data bus port. The memory chip is incorporated into a design structure that is embodied in a computer readable medium used for designing, manufacturing, or testing the memory chip.

Abstract: A double-data-rate two synchronous dynamic random access (DDR2 ) memory circuit includes a low-speed input path and a high-speed input path coupled thereto by an input coupling and forming a common input, the common input coupled to a memory core, the memory core having a common output wherein a high-speed output path and a low-speed output path are coupled together by an output coupling and further coupled to the common output of the memory core.

Abstract: One embodiment of the present invention includes a column multiplexer for accessing data from a memory array comprising an output node having a logic state that is based on a logic state of a control node, and column elements, each comprising a first pair of series connected switches controlled by a column select signal and a bit line signal associated with data stored in a plurality of memory cells. The first pair of switches is configured to set the control node to a logic low state based on a logic state of the bit line signal. The column elements each also comprise a second pair of series connected switches controlled by the bit line signal and a complement of the column select signal. The second pair of switches is configured to set the control node to a logic high state based on the logic state of the bit line signal.

Abstract: An integrated circuit device having a display memory which stores data for at least one frame from among image information displayed in a display panel which has a plurality of scan lines and a plurality of data lines, the display memory including a plurality of wordlines, a plurality of bitlines, a plurality of memory cells, and a wordline control circuit; and the wordline control circuit selecting an identical wordline N times (N is an integer larger than one) from among the wordlines in one horizontal scan period of the display panel.