Abstract: A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.

Abstract: A nonvolatile semiconductor memory device includes a memory cell, a precharge control circuit, a power supply circuit, a bit line driver, a word line driver, a first multiplexer, and a second multiplexer. The memory cell includes an anti-fuse storage element and a selection transistor. Before data are written into the anti-fuse storage element of the memory cell, the anti-fuse storage element is set up in a precharged state by the precharge control circuit, the bit line driver, the word line driver, the first multiplexer, and the second multiplexer.

Abstract: The present invention provides a system and method for refreshing a DRAM device without interrupting or inhibiting read and write operations of the DRAM device. The system may includes refresh control circuitry that selectively generates requests to perform refresh operations and a refresh address counter that is coupled to the refresh control circuitry and that generates a refresh address in response to receiving a refresh request. The refresh address corresponds to a word line of the DRAM array to be refreshed. Address control and switching circuitry may be coupled to the refresh control circuitry. The address control and switching circuitry selectively transmits read/write addresses and refresh addresses to the DRAM array, in order to perform refresh operations on the DRAM array without inhibiting read and write operations.

Abstract: Apparatus and methods are disclosed, such as those involving a memory device. One such memory device includes a memory array including a sub-array that includes a first number of columns of memory cells, and one or more global input/output (I/O) lines shared by the first number of columns for data transmission. The memory device also includes one or more multiplexers/demultiplexers, wherein each of the multiplexers/demultiplexers is electrically coupled to one or more, but not all, of the global I/O lines. The memory device further includes a plurality of local I/O lines, each configured to provide a data path between one of the multiplexers/demultiplexers and one or more, but less than the first number, of the columns in the sub-array. This configuration allows local I/O line repairability with fewer redundant elements, and shorter physical local I/O lines, which translate to improved speed and die size reduction.

Abstract: A memory includes multiple interface ports. The memory also includes at least two sub-arrays each having an instance of all of the bit lines of the memory and a portion of the word lines of the memory. The memory has a common decoder coupled to the sub-arrays and configured to control each of the word lines. The memory also includes multiplexers coupled to each of the interface ports. The multiplexers are configured to cause the selection of one of the sub-arrays based upon an address of a memory cell received at one or more of the interface ports.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of memory cell arrays each includes a plurality of memory cells, the plurality of memory cell arrays being stacked on a semiconductor substrate to form a three-dimensional structure, and a data input/output circuit includes a first address buffer and a second address buffer configured to store a first address and a second address of the plurality of memory cells, and a controller configured to perform control to time-divisionally output the first address and the second address to a first address bus and a second address bus in data input/output.

Abstract: The present invention relates to a microprocessor with reduced pin counts. The microprocessor transmits a higher bit address, a lower bit address and data via a common port so that a pin for transmitting the higher bit address is omitted. In an embodiment of the present invention, a new higher bit address latching signal is added in order to latch the higher bit address so that an original lower bit address latching signal and the higher bit address latching signal can respectively latch the lower bit address and the higher bit address.

Abstract: An electronic flash memory external storage method and device for data processing system includes firmware which directly controls the access of electronic storage media and implements standard interface functions, adopts particular reading and writing formats of the external storage media, receives power via USB, externally stores data by flash memory and access control circuit with the cooperation of the firmware and the driver with the operating system, and has write-protection so that the data can be safely transferred. The method according to present invention is highly efficient and all parts involved are assembled as a monolithic piece so that it has large-capacity with small size and high speed. The device operates in static state and is driven by software. It is plug-and-play and adapted to data processing system.

Abstract: In one embodiment of the invention, a memory integrated circuit is provided including an address decoder to selectively access memory cells within a memory array; a mode register with bit storage circuits to store an enable bit and at least one sub-channel select bit; and control logic. The control logic is coupled to a plurality of address signal lines, the address decoder, and the mode register. In response to the enable bit and the at least one sub-channel select bit, the control logic selects one or more of the address signal lines to capture independent address information to support independent sub-channel memory accesses into the memory array. The control logic couples the independent address information into the address decoder.

Abstract: Disclosed is an input circuit of a semiconductor memory apparatus. The input circuit includes a first buffer and a second buffer. The first buffer has an input terminal connected with a first input pin for receiving a control signal used in a multi-control mode for controlling an entire memory area by dividing the entire memory area, and an output terminal having a first level according to a control mode signal. The second buffer has an input terminal connected with a second input pin for receiving one of plural signals used in a single control mode for controlling the entire memory area without dividing the entire memory area, and an output terminal having a second level according to the control mode signal.

Abstract: Various embodiments are disclosed relating to a memory circuit architecture. In an example embodiment, which may accommodate a change to a new memory size or cell aspect ratio, while migrating between different process nodes or the same process generation, while retaining at least a portion of the periphery circuitry, a memory circuit architecture may be employed in which the memory array is divided into an upper half and a lower half, thereby splitting the cache Ways among the two halves. The wordline may be split among the two array halves, with each half driven by a half wordline driver. Also, in another embodiment, two sets of bitlines may be provided for each column, including a contacted set of bitlines and a feed-through set of bitlines.

Abstract: An integrated circuit memory includes multiple memory banks grouped into repair groups Group0, Group1. One memory has redundant rows which can be used to substitute for a defective row found within any of the memory banks within the common repair group concerned. Redundant columns of memory cells may be substituted for defective columns by multiplexing circuitry. This multiplexing circuitry shifts the bit lines selected to form part of a bit group to access a given data bit by an amount less than the multiplexing width being supported by that multiplexing circuitry thereby reducing the number of redundant columns which need be provided.

Abstract: An integrated circuit including a memory module having a plurality of memory banks is disclosed. One embodiment provides an even number of at least four memory banks. Each memory bank has a plurality of memory cells. Each two of the memory bank form a memory bank region and being alternately connected to an m-bit data bus. The memory banks are classified into two groups, each group including a memory bank of each memory bank region. The memory module further includes a selection device connected to the memory banks and being responsive to selection bits. The selection device selects one of the two groups of memory banks and a group of i memory cells within the memory banks of the selected group of memory banks to access the selected i memory cells per one stroke via the associated m-bit data buses of the memory groups including the selected memory banks, m being equal to an integer multiple of i.

Abstract: An integrated circuit design method whereby memory instances are assigned to memory macros integrated within an integrated circuit. A plurality of memory instances operating at the same operation frequency are assigned to a single memory macro. A frequency multiplier which receives a first clock signal is arranged to generate a second clock signal through frequency multiplication of the first clock signal, and feeds the second clock signal to the plurality of memory instances. A control circuit which selects the memory instances in synchronization is arranged with the first clock signal.

Abstract: A circuit including is disclosed. The circuit includes a precharge circuit configured to pull a dynamic node toward a voltage present on the voltage supply node during a precharge phase, and an evaluation circuit configured to, during an evaluation phase, pull the dynamic node toward a ground voltage responsive to a first input condition and configured to inhibit pulling of the dynamic node down responsive to a second input condition. A pull-up circuit coupled between the first dynamic node and the voltage supply node includes first and second pull-up transistors. The first pull-up transistor is configured to activate responsive to the precharge phase. The second pull-up transistor is configured to activate at a delay time subsequent to entry of the evaluation phase. When the first and second pull-up transistors are active, a pull-up path is provided between the dynamic node and the voltage supply node.

Abstract: Apparatus and method for decoding addresses of control lines in a semiconductor device, such as a solid state memory (SSM). In accordance with some embodiments, a switching circuit includes an array of switching devices coupled to 2N output lines and M input lines, wherein M and N are respective non-zero integers and each output line has a unique N-bit address. A decoder circuit coupled to the switching circuit divides the N-bit address for a selected output line into a plurality of multi-bit subgroup addresses, and asserts the M input lines in relation to respective bit values of said subgroup addresses to apply a first voltage to the selected output line and to concurrently apply a second voltage to the remaining 2N-1 output lines.

Abstract: The invention relates generally to a multi-chip package (MCP) memory device, and more particularly, but without limitation, to a MCP memory device having a reduced size. In one embodiment, the MCP memory device includes: a transfer memory chip; and a plurality of memory chips coupled to the transfer memory chip, each of the plurality of memory chips including an internal voltage generating circuit, the transfer memory chip configured to receive a plurality of command signals from outside the MCP memory device, the transfer memory chip further configured to output a plurality of control signals to the plurality of memory chips based on the plurality of command signals. Embodiments of the invention also relate to a method of controlling an internal voltage of the MCP memory device.

Abstract: A method of operating a flash memory device includes a first operating mode and a second operating mode having different operating speeds. Each one of the first and second operating modes includes a bit line set-up interval and at least one additional interval. The flash memory is divided into first and second mats connected to respective first and second R/W circuits. During the bit line set-up interval of the second operating mode, the flash memory controls operation of both the first and second R/W circuits in a time division approach to stagger respective peak current intervals for the first and second mats.

Abstract: The present invention relates to a semiconductor memory, and more specifically, to a data output circuit capable of differentiating global data lines in accordance to an operation mode to output them to a data input/output pin. The present invention includes: a multiplexer selecting any one of a plurality of global input/output lines which can receive variable data bandwidth directed by control signals and which can output data carried on the selected global input/output line, and a controller generating the control signals in accordance to operation mode signals corresponding to a data bandwidth and address signals provided for selecting data and providing them to the multiplexer. Thereby, the present invention can realize an improved data read speed by reducing the loading of the global input/output line.

Abstract: Semiconductor memory device and parallel test method of the same. The test includes writing data into multiple memory banks simultaneously, reading the data from a portion of the memory banks, compressing the read data and outputting the compressed data to the outside of a chip.

Abstract: A control circuit applied in a memory that comprises a first memory block and a second memory block, and each of the first and the second memory blocks includes a boundary cell. The control circuit comprises an address decoder, a first Y-multiplexer, and a second Y-multiplexer. The address decoder provides a plurality of column selection signals capable of being a boundary value. The first Y-multiplexer corresponds to the first memory block and provides a first boundary data channel for a boundary cell of the first memory block. The second Y-multiplexer corresponds to the second memory block and provides a second boundary data channel for a boundary cell of the second memory block. The first and the second boundary data channels are enabled simultaneously in response to the boundary value for outputting boundary data stored in the boundary cell of the first memory block and that of the second memory block.

Abstract: Apparatus and methods are disclosed, such as those involving a memory device. One such memory device includes a memory array including a sub-array that includes a first number of columns of memory cells, and one or more global input/output (I/O) lines shared by the first number of columns for data transmission. The memory device also includes one or more multiplexers/demultiplexers, wherein each of the multiplexers/demultiplexers is electrically coupled to one or more, but not all, of the global I/O lines. The memory device further includes a plurality of local I/O lines, each configured to provide a data path between one of the multiplexers/demultiplexers and one or more, but less than the first number, of the columns in the sub-array. This configuration allows local I/O line repairability with fewer redundant elements, and shorter physical local I/O lines, which translate to improved speed and die size reduction.

Abstract: A semiconductor memory device includes: a first address buffer configured to be used in a test mode and a normal mode and to receive more addresses in the test mode than in the normal mode; and a second address buffer configured to be used in the normal mode and disabled in the test mode.

Abstract: Integrated circuits are provided that have memory arrays. The memory arrays may include rows and columns of data byte storage locations. To implement algorithms that that process data subwords, a memory array may be partitioned into individual memory banks each of which has its own associated data register and its own associated address decoder. Each address decoder may receive address signals from an associated multiplexer. Address mapping circuits may be used to distribute address signals to multiplexer inputs using an non-blocking memory architecture. The memory architecture allows collections of data bytes to be written and read from the memory array using column-wise and row-wise read and write operations. The data bytes that are written to the array and that are read from the array may be stored in adjacent data byte locations in the array.

Abstract: There is provided a semiconductor memory device including: a source strobe signal generating unit configured to generate a source strobe signal having a first or a second activation width corresponding to a normal mode and a bank grouping mode; a final strobe signal generating unit configured to, in the normal mode, expand the first activation width and generate a final strobe signal having the expanded first activation width, and in the bank grouping mode, maintain the second activation width and generate the final strobe signal having the second activation width; and a sense amplifying unit configured to sense, amplify and output data applied through a data line in response to the final strobe signal.

Abstract: A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a voltage to the memory cells, the voltage to be supplied for data read, write and erase operations with respect to the memory cells. Each of the transfer transistors includes: a gate electrode formed on a semiconductor substrate via a gate insulation film; and diffusion layers formed to sandwich the gate electrode therebetween and functioning as drain/source layers. Upper layer wirings are provided above the diffusion layers and provided with a predetermined voltage to prevent depletion of the diffusion layers at least when the transfer transistors become conductive.

Abstract: A Y-decoder includes a selection unit and a Y-MUX. The selection unit is coupled to the memory array for selecting the column lines. The Y-MUX is coupled to the selection unit for supplying a voltage to the selected column line. The Y-MUX includes a first switch, a second switch, a third switch and a fourth switch coupled in parallel. The first switch and the second switch are respectively for receiving a first shielding voltage and a second shielding voltage. The third switch and the fourth switch are respectively for receiving a first sensing voltage and a second sensing voltage.

Abstract: A method of reading sequential pages of flash memory from alternating memory blocks comprises loading data from a first page into a first primary data cache and a second page into a second primary data cache simultaneously, the first and second pages loaded from different blocks of flash memory. Data from the first primary data cache is stored in a first secondary data cache, and data from the second primary data cache is stored in a second secondary data cache. Data is sequentially provided from the first and second secondary data caches by a multiplexer coupled to the first and second data caches.

Abstract: A pseudo-dual port memory address multiplexing system includes a control circuit operative to identify a read request and a write request to be accomplished during a single clock cycle. A self time tracking circuit monitors a read operation and generates a switching signal when the read operation is determined to be complete. A multiplexer is responsive to the switching signal for selectively providing a read address and a write address to a memory address unit at the proper time.

Abstract: A sense amplifier includes a first sensing element and a second sensing element redundant to the first sensing element. The sense amplifier further comprises a switch circuit configured to switch between the first and second sensing elements when an offset of the sense amplifier is greater than a prescribed amount.

Abstract: A memory includes first selective transistors connected between one end of cell strings and bit lines; second selective transistors connected between the other end of the cell strings and a cell source line; a dummy cell string; a first dummy selective transistor connected between one end of the dummy cell string and a dummy bit line and whose gate is connected to a first selective gate line; a second dummy selective transistor connected between the other end of the dummy cell string and the cell source line and whose gate is connected to a second selective gate line, wherein at a time of writing in a selected memory cell, a voltage of a first dummy bit line selected is driven to a different voltage from a voltage of an unselected bit line, and any of the dummy cell transistors connected to the first dummy bit line is written.

Abstract: Some embodiments include a delay line configured to apply a delay to an input signal to provide an output signal; an input circuit configured to provide the input signal based on a first signal, such that the cycle time of the input signal is different from a cycle time of the first signal; an output circuit configured to provide a second signal based on the output signal, the second signal having a cycle time different from a cycle time of the output signal; and a controller configured to adjust the delay to control a timing relationship between the first signal and the second signal. Other embodiments are described and claimed.

Abstract: A semiconductor memory cell device includes a first multiplexer selecting a sub-block including a memory cell storing data to be read out in a row, a drain selector selecting a first column line connected to one terminal of the memory cell to be read, a precharge selector selecting a second column line connected to the other terminal of the memory cells adjacent to the one terminal of the memory cell storing the data to be readout, a second multiplexer selecting the sub-block including the second column line, a source selector selecting a third column line connected to the other terminal of the memory cell storing the data to be read out. The second multiplexer and precharge selector, when selecting, apply a first voltage to the second column line, and the source selector, when selecting, applies a second voltage to the third column line.

Abstract: An integrated circuit for storing data, and for application in a memory card that operates in cooperation with at least one of an external acquisition system and an external processing system includes input/output terminals for receiving the data to be stored, and an electrically programmable non-volatile memory for storing the data in digital format. The memory includes a first terminal for receiving a programming signal for enabling storage of the data, and a second terminal for receiving a reading signal for enabling output of the stored data via the input/output terminals. A memory control circuit is connected to the first and second terminals of the electrically programmable non-volatile memory, and to the input/output terminals for generating programming and reading signals based upon the command signal. The electrically programmable non-volatile memory is erasable by electromagnetic radiation for permitting a non-electrical erasure of the stored data.

Abstract: Apparatus and methods are disclosed, such as those involving a memory device. One such memory device includes a memory array including a sub-array that includes a first number of columns of memory cells, and one or more global input/output (I/O) lines shared by the first number of columns for data transmission. The memory device also includes one or more multiplexers/demultiplexers, wherein each of the multiplexers/demultiplexers is electrically coupled to one or more, but not all, of the global I/O lines. The memory device further includes a plurality of local I/O lines, each configured to provide a data path between one of the multiplexers/demultiplexers and one or more, but less than the first number, of the columns in the sub-array. This configuration allows local I/O line repairability with fewer redundant elements, and shorter physical local I/O lines, which translate to improved speed and die size reduction.

Abstract: When a free physical block where data is to be written is searched for, a search process for searching for a pair of free physical blocks is first executed using a free physical block search table. Detection of a free non-pair good block is executed only when a pair of free physical block is not detected in the search process using the free physical block search table. When there is a free physical block, two-plane write is executed. When there is no pair of free physical blocks, data is written in an adequately combined non-pair good blocks.

Abstract: A multi-port memory may be formed from a plurality of “simpler” memories. In one implementation, the memory includes a write port and a number of memories provided in groups, such that the write port supplies each of a plurality of copies of the data unit to a subset of the memories, each of the subset of memories being provided in a corresponding one of the groups, a number of the copies of the data unit being greater than two. Multiplexers may be implemented, each of which being associated with a corresponding one of the groups of the memories. One of the plurality of multiplexers may be configured to selectively supply one of the copies of the data unit from one of the memories. A read port may receive the one of the copies of the data unit from the one of the multiplexers and output the one of the copies of the data unit.

Abstract: An apparatus and method for controlling write access to a group of storage elements is provided. Each storage element within the group is identified by an n-bit address, and the total number of storage elements in the group is less than 2n. Write enable circuitry is responsive to an access request specifying an n-bit address to issue a write control signal to the storage element addressed by the access request in the event that the access request is a write access request. The write control signal causes a write to that addressed storage element to occur. The write enable circuitry comprises selective address modification circuitry for outputting as an internal address the unmodified n-bit address if the access request is a write access request, and for outputting as the internal address an n-bit unused address if the access request is not a write access request.

Abstract: A method of configuring a plurality of memory elements having selectable dimensions, the method comprising the steps of selecting a width of a data word to be output by a circuit having the plurality of memory elements; selecting a width for memory locations of the plurality of memory elements, the width for the memory location being less than the width of a data word; configuring the plurality of memory elements to have the selected width; and concatenating the outputs for the plurality of memory elements to generate a concatenated output comprising a data word. A circuit for configuring a plurality of memory elements having selectable dimensions is also disclosed.

Abstract: A semiconductor memory device including a transistor having a vertical channel structure is provided. The device includes a first sub memory cell array including a first memory cell connected to a first bit lines and including a transistor having a vertical channel structure, a second sub memory cell array including a second memory cell connected to a first inverted bit lines and including a transistor having a vertical channel structure, and a plurality of precharge blocks. In addition, first and second precharge blocks are disposed at first and second sides of the first bit line and precharge the first bit line, and third and fourth precharge blocks are disposed at first and second sides of the first inverted bit line and precharge the first inverted bit line.

Abstract: A sequential access memory (“SAM”) device, system and method is provided that includes a memory array configured to store a group of bytes on each of a plurality of rows. A plurality of bit-lines transfer each of the group of bytes into and out of the memory array, and a pre-charging unit is configured to pre-charge the plurality of bit-lines once per each transfer of one of the group of bytes into or out of one of the plurality of rows. The device operates by accessing a memory array in a SAM device by activating a selected row in the memory array, pre-charging a plurality of bit-lines that provide access to the memory array, and accessing the memory array before the plurality of bit-lines are pre-charged a second time.

Abstract: A memory cell accessing method may include receiving an input address, determining whether the input address has been accessed at least a predetermined number of times, and converting a memory cell enabled by the input address when it is determined that the input address has been accessed the predetermined number of times or more.

Abstract: A semiconductor memory device includes a plurality of banks a plurality of banks stacked in a column direction, a global data line corresponding to the plurality of banks and a common global data line driving unit for multiplexing data on a plurality of local data lines corresponding to each of the banks to transmit the multiplexed result to the global data line.

Abstract: A flash memory device includes a memory cell array including a plurality of memory cells, a page buffer unit including a plurality of page buffers connected to bit lines of the memory cell array, a data line mux unit connected between the page buffer unit and a data line and configured to receive verification data through a page buffer during a verify operation. The flash memory device also includes a fail bit counter unit for counting the verification data, comparing counted fail bits and the number of ECC allowed bits, and outputting a pass or fail signal of a program operation according to the comparison result.

Abstract: The data output control signal generating circuit includes a delay correction signal generating unit that delays an input signal by a phase difference between a clock and a delay locked loop clock, and latches the delayed signal to generate a plurality of output enable signals. A column address strobe latency control multiplexer selects the output enable signal corresponding to column address strobe latency among the plurality of output enable signals, on the basis of the signal obtained by delaying the input signal by the phase difference between the clock and the delay locked loop clock, and outputs the selected signal as the data output control signal.

Abstract: The present invention relates to a memory repair circuit and a repairable pseudo-dual port static random access memory (pseudo-dual port SRAM). The memory repair circuit uses fewer redundant column blocks and stores a few failed block addresses to reduce the required complexity of decoding the redundant column blocks. Thus, the present invention can reduce a layout area required by redundant memory cells.

Abstract: A method and system for testing a semiconductor memory device using low-speed test equipment. The method includes providing a high-frequency test pattern by grouping a command signal and an address signal into command signal groups and address signal groups each corresponding to L cycles of a clock signal output from automatic test equipment (ATE) where L is a natural number. A valid command signal and a valid address signal, which are not in an idle state, are extracted from each of a plurality of command signal groups and each of a plurality of address signal groups. The valid command signal and the valid address signal are compressed into signals having a length corresponding to 1/M (M is a natural number larger than 1) of the cycle of the clock signal where M is a natural number larger than 1. A position designating signal indicating the positions of the valid command signal and the valid address signal in each command signal group and each address signal group is generated.

Abstract: A semiconductor device comprises a plurality of memory chips; and a controller configured to supply the plurality of memory chips with signals for controlling the plurality of memory chips. The plurality of memory chips include a chip selection signal input section configured to make a drive-targeted memory chip selected or non-selected, based on an input signal. They also include an address signal input section configured to provide a signal to address the memory chip, based on an input signal. They further include a select address signal input section configured to make the plurality of memory chips selected or non-selected, based on an input signal, and configured divertible to the address signal input section.

Abstract: A method and system for simultaneously reading data from multiple indexed arrays, where each indexed array includes one or more memory locations and is coupled to a multiplexing circuit. Each multiplexing circuit includes one or more multiplexers and is driven by a set of input selector signals. The method includes enabling each multiplexing circuit with a distinct combination of the set of input selector signals. The distinct combinations of the set of input selector signals cause each input selector signal to drive a comparable number of multiplexers. Each multiplexing circuit selects a memory location from the coupled indexed array. Further, the method includes reading the data at the selected memory locations through the output of each multiplexing circuit.

Abstract: An electronic flash memory external storage method and device for data processing system, includes firmware which directly controls the access of electronic storage media and implements standard interface functions, adopts particular reading and writing formats of the external storage media, receives power via USB, externally stores date by flash memory and access control circuit 2 with the cooperation of the firmware, driver and operating system, and has write-protection so that the data can be safely transferred. The method according to present invention is highly efficient and all parts involved are assembled as a monolithic piece so that it has large-capacity with small size and high speed. The device operates in statistic state and is driven by software. It is plug-and-play and adapted to data processing system.