Abstract: A computing device is described. The computing device includes first and second arrays of compute units and first and second arrays of routers. The first array of compute units is arranged on a first substrate and includes a first plurality of compute-in-memory (CIM) modules. The first array of routers is configured to route information horizontally among the first array of compute units. The second array of compute units is arranged on a second substrate and includes a second plurality of CIM modules. The second substrate is disposed vertically from the first substrate. The second array of routers is configured to route the information horizontally among the second array of compute units on the second substrate. The first array of routers and the second array of routers send the information vertically between the first substrate and the second substrate.

Abstract: A flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface. The flash memory controller sends a debug injection command signal to the flash memory device through the specific communication interface to configure an operation of a debug circuit of the flash memory device to make the debug circuit automatically generate debug information of an access operation of the debug injection command signal sent from the flash memory controller, transmit the generated debug information from the flash memory device to the flash memory controller via the I/O control circuit and the specific communication interface, without controlling a memory cell array of flash memory device generating errors.

Abstract: Systems, apparatuses, and methods related to a flip-on-precharge disable operation are described herein. In an example, a method can include receiving a command to perform a precharge operation on a set of memory cells in a memory device. The memory device can include a plurality of sets of memory cells corresponding to respective portions of an array of memory cells of the memory device. The method can further include accessing one or more sets of bits in a mode register. The one or more sets of bits in the mode register indicate address locations of the plurality of sets of memory cells to disable the flip on precharge operation. The method can further include performing the precharge operation on the set of memory cells. The flip on precharge operation associated with the precharge operation can be disabled for those sets of the plurality of sets of memory cells whose address locations are in the mode register.

Abstract: First and second sensing circuits are coupled to first and second data lines, respectively, and sense levels of current leakage or a memory cell state on the first and second data lines. First and second keeper circuits are coupled to the first and second data lines, respectively, and drive the first and second data lines by a voltage supply through biased transistors. First and second leakage latches are coupled to receive and latch state of signals output from the first and second sensing circuits, respectively. A control circuit is coupled to the first leakage latch, second leakage latch, and outputs of the first and second sensing circuits. The control circuit is configured to select either the signal output from the first sensing circuit or the signal output from the second sensing circuit in response to states of the first and second leakage latches.

Abstract: Systems and methods are related to a memory device including a plate line. The memory device also includes a pair of ferroelectric layers implementing a pair of memory cells and coupled to opposite sides of the plate line. The memory device further includes a pair of digit lines each coupled to a respective ferroelectric layer of the pair of ferroelectric layers. The memory device also includes a sense amplifier coupled to the pair of digit lines and configured to sense and amplify voltages received at the digit lines from the respective memory cells. The sense amplifier includes a threshold voltage compensated latch that includes multiple p-channel transistors and is configured to compensate for process, voltage, or temperature variation mismatches between the threshold voltages of the multiple p-channel transistors.

Abstract: A memory device includes at least one memory bank comprising a set of redundant word lines, a set of normal word lines, and row hammer refresh logic. The RHR logic comprises a first input to receive a first signal indicative of whether a match was generated at a fuse of the memory device, a second input to receive a redundant row address corresponding to a first location of a memory array of the memory device, a third input to receive a word line address corresponding to a second location of the memory array of the memory device. The RHR logic also comprises an output to transmit at least one first memory address adjacent to the first location or at least one second memory address adjacent to the second location based on a value of the first signal.

Abstract: Various embodiments include a memory device that is capable of performing memory access operations with reduced power consumption relative to prior approaches. The memory device receives early indication as to whether a forthcoming memory access operation is a read operation or a write operation. The memory device enables various circuits and disables other circuits depending on whether this early indication identifies an upcoming memory access operation as a read operation or a write operation. As a result, circuits that are not needed for an upcoming memory access operation are disabled earlier during the memory access operation relative to prior approaches. Disabling such circuits earlier during the memory access operation reduces power consumption without reducing memory device performance.

Abstract: A method for operating a memory includes: receiving an active command and a row address; confirming that a portion of columns of a first row corresponding to the row address is replaced with a portion of columns of a second row; activating the first row and the second row; confirming activation of a random pulse; randomly selecting one among the row address corresponding to the first row and a row address corresponding to the second row in response to the activation of the random pulse; and sampling the selected row address as a sampling address.

Abstract: A memory circuit includes a plurality of word lines, a word line driver coupled to a first end of the plurality of word lines and configured to activate each word line of the plurality of word lines, a local I/O circuit configured to generate a pulse signal corresponding to the word line driver activating any word line of the plurality of word lines, a first node configured to carry a first power supply voltage, and a booster circuit coupled to a second end of the plurality of word lines, the local I/O circuit, and the first node. The booster circuit is configured to couple each word line of the plurality of word lines to the first node responsive to the pulse signal and to the corresponding word line being activated by the word line driver.

Abstract: A structure for in-memory pipeline processing includes a memory bank array. Each bank includes single resistor or dual resistor memory elements connected between input nodes, respectively, and bitline(s) (e.g., a single bitline for a single resistor memory element and first and second bitlines for a dual resistor memory element). A feedback buffer is connected to each bitline and a corresponding output node in each bank and a column interconnect line connects corresponding output nodes of all banks in the same column. The initial bank in each row includes amplifiers connected between the input nodes and memory elements and track-and-hold devices (THs) connected to the input nodes to facilitate pipeline processing. Outputs of the amplifiers are also connected by row interconnect lines to memory elements in downstream banks in the same row. Optionally, voltage buffers are connected to row interconnect lines and integrated into at least some banks.

Abstract: A memory includes: bit lines extending along a first direction and word lines extending along a second direction; a plurality of memory modules arranged along the first direction; a column selection circuit and a read-write control driver circuit, wherein the column selection circuit and the read-write control driver circuit are located on a same side of the plurality of memory modules perpendicular to the first direction; column-select lines extending along the first direction and column connection lines extending along a third direction, wherein each of the column-select lines is electrically connected to an amplification unit arranged along the first direction and is electrically connected to the column selection circuit through the column connection line, and the column selection circuit is configured to drive the amplification unit electrically connected to the column-select line.

Abstract: A system includes a processing device that determines whether a memory bank is active and adds an activate command for a row of the memory bank accessed by an oldest command for the memory bank to a command scheduler in response to determining the memory bank is not active. The processing device determines whether the row of the memory bank has a corresponding row command in response to determining the memory bank is active. The processing device determines whether a close page mode is enabled or an open row timer has expired on the row and adds a precharge command to the command scheduler in response to determining the close page mode is enabled or the open row timer has expired. The processing device executes a command in the command scheduler based on a priority of commands included in the command scheduler.

Abstract: An apparatus includes a TM control circuit that is configured to receive address information corresponding to a TM function and compare the address information with an authorized TM list stored in a memory of the apparatus to determine if there is a match. If there is a match, a latch load signal pulse is output. A TM latch circuit programs one or more latches based on the address information and based on the latch load signal pulse. The TM latch circuit decodes information in the one or more latches and, based on the decoded information, outputs a test mode signal to turn on test mode operations in circuits associated with the TM function. The apparatus includes a plurality of TM functions for testing various features of the apparatus and the authorized TM list identifies which of the plurality of TM functions has been authorized for customer use.

Abstract: To provide a display device including a flexible panel that can be handled without seriously damaging a driver circuit or a connecting portion between circuits. The display device includes a bent portion obtained by bending an element substrate. A circuit for driving the display device is provided in the bent portion and a wiring extends from the circuit, whereby the strength of a portion including the circuit for driving the display device is increased and failure of the circuit is reduced. Furthermore, the element substrate is bent in a connecting portion between an external terminal electrode and an external connecting wiring (FPC) so that the element substrate provided with the external terminal electrode fits the external connecting wiring, whereby the strength of the connecting portion is increased.

Abstract: A memory for an artificial neural network (ANN) accelerator is provided. The memory includes a first bank, a second bank and a bank selector. Each bank includes at least two word lines and a plurality of write word selectors. Each word line stores a plurality of words, and each word has a plurality of bytes. Each write word selector has an input port and a plurality of output ports, is coupled to a corresponding word in each word line, and is configured to select a byte of the corresponding word of a selected word line based on a byte select signal. The bank selector is coupled to the write word selectors of the first bank and the second bank, and configured to select a combination of write word selectors from at least one of the first bank and the second bank based on a bank select signal.

Abstract: A circuit module with improved line load, may comprise a first line, a first switch, a second line, a second switch and a second driver. The first switch may be on and off to conduct and stop conducting between the first line and a first node. The second switch may be on and off to conduct and stop conducting between the second line and the first node. The second driver, coupled to the second line, may be enabled to drive the second line according to a voltage of a second node, and may be disabled to stop driving the second line. The voltage of the second node may be controlled by a voltage of the first node. When the first switch is on, the second switch may be off. When the second switch is off, the second driver may be enabled.

Abstract: Apparatuses, systems, and methods for address based memory performance. A memory array may include a first performance region and a second performance region, each of which may have different performance characteristics from each other. The second region may be distinguished from the first region based on the addresses which are associated with each region. The second performance region may have different performance characteristics based on differences in the layout, components, logic circuits, and combinations thereof. For example, the second region, compared to the first region, may have reduced difference to the data terminals, reduced length of digit lines, a different type of sense amplifier, different refresh address tracking, and combinations thereof. The controller may perform access operations on the memory with different timing based on which region of the memory is accessed.

Abstract: A semiconductor device includes a controller circuit and a signal generating circuit. The controller circuit is coupled to a plurality of memory devices and configured to generate a plurality of chip enable signals. One of the chip enable signals is provided to one of the memory devices, so as to respectively enable the corresponding memory device. The signal generating circuit is disposed outside of the controller circuit and configured to receive the chip enable signals and generate a termination circuit enable signal according to the chip enable signals. The termination circuit enable signal is provided to the memory devices. When a state of any of the chip enable signals is set to an enabled state, a state of the termination circuit enable signal generated by the signal generating circuit is set to an enabled state.

Abstract: A memory controller includes transaction queue circuitry, a first skip event, a second skip event, a third skip event, and scheduler circuitry. The transaction queue circuitry is configured to store a first transaction, a second transaction, and a third transaction. The first transaction received is by the transaction queue circuitry before the second transaction and the third transaction. The second transaction is received by the transaction queue circuitry before the third transaction. The first skip event counter is associated with the first transaction. The second skip event counter is associated with the second transaction. The third skip event counter is associated with the third transaction. The scheduler circuitry is configured to select the third transaction before selecting the first transaction, increase a value of the first skip event counter based on selecting the third transaction before the first transaction, and communicate the third transaction to a memory device.

Abstract: A method of operating memory devices disposed in different ranks of a multi-rank memory device and sharing a signal line includes receiving, in all of the memory devices included in the multi-rank memory device, on-die termination (ODT) state information of the signal line. The method further includes storing, in each of the memory devices of the multi-rank memory device, the ODT state information of the signal line in a mode register. The method further includes generating, in each of the memory devices of the multi-rank memory device, a control signal based on the ODT state information of the signal line stored in the mode register. The method further includes changing, in each of the memory devices of the multi-rank memory device, an ODT setting of the signal line in response to the control signal.

Abstract: A method for programming a non-volatile memory structure, wherein the method comprises initiating a two-dimensional fractional number of bits-per-cell programming scheme with respect to at least a first memory cell and a second memory cell of a plurality of memory cells of the memory structure, wherein the memory structure comprises: (1) a first memory array that comprises a first population of the plurality of memory cells and associated peripheral circuitry disposed below the first population of the plurality of memory cells, (2) a second memory array that is positioned above the first memory array and comprises a second population of the plurality of memory cells and the associated peripheral circuitry that is disposed above the second population of the plurality of memory cells, and (3) a data bus tap electrically coupling the first memory array and the second memory array.

Abstract: A system is provided. The system includes a multiply-and-accumulate circuit and a local generator. The multiply-and-accumulate circuit is coupled to a memory array and generates a multiply-and-accumulate signal indicating a computational output of the memory array. The local generator is coupled to the memory array and generates at least one reference signal at a node in response to one of a plurality of global signals that are generated according to a number of the computational output. The local generator is further configured to generate an output signal according to the signal and a summation of the at least one reference signal at the node.

Abstract: A DRAM device may be configured to retransmit or not retransmit zero or more of command/address signals, write data signals, read data signals, and/or data strobe signals. The DRAM device may have separate, unidirectional read data signal and write data signal interfaces. Combined activate and read or write commands may be implemented. The configuration of the DRAM to retransmit or not retransmit signals may be determined by the DRAM device's physical location on a module via hardwired configuration pins. The various configurations allows a DRAM device to be used on both a long and narrow form factor module and a DIMM module.

Abstract: An industrial control system module and methods are described for self-destruction or the destruction and/or erasure of sensitive data within the industrial control system module upon an indication of an unauthorized module access event. In an implementation, a secure industrial control system module includes a circuit board including electrical circuitry; a sealed encasement that houses the circuit board, where the sealed encasement includes a housing having a first housing side and a second housing side, where the housing is configured to house the circuit board when the first housing side and the second housing side are coupled together; and a first sensor component integrated with the sealed encasement, where the first sensor component is communicably coupled to the circuit board and electrical circuitry and is configured to provide an indication of an unauthorized access event.

Abstract: A memory device includes at least one memory cell block, a first edge block, a second edge block, multiple first sense amplifiers, and multiple second sense amplifiers. The first edge block is coupled to multiple first word lines, where at least one of the first word lines receives an enabled first word line signal. The second edge block is coupled to multiple second word lines, where at least one of the second word lines receives an enabled second word line signal. The first sense amplifiers are disposed between the first edge block and the memory cell block. The second sense amplifiers are disposed between the second edge block and the memory cell block.

Abstract: A memory unit with time domain edge delay accumulation for computing-in-memory applications is controlled by a first word line and a second word line. The memory unit includes at least one memory cell, at least one edge-delay cell multiplexor and at least one edge-delay cell. The at least one edge-delay cell includes a weight reader and a driver. The weight reader is configured to receive a weight and a multi-bit analog input voltage and generate a multi-bit voltage according to the weight and the multi-bit analog input voltage. The driver is connected to the weight reader and configured to receive an edge-input signal. The driver is configured to generate an edge-output signal having a delay time according to the edge-input signal and the multi-bit voltage. The delay time of the edge-output signal is positively correlated with the multi-bit analog input voltage multiplied by the weight.

Abstract: Disclosed herein is an apparatus that includes: a semiconductor substrate including first and second source regions coupled to a first power supply line and first and second drain regions coupled to a second power supply line, the first drain region being arranged between the first and second source regions, the second source region being arranged between the first and second drain regions; and gate electrodes including a first gate electrode arranged between the first source region and the first drain region, a second gate electrode arranged between the first drain region and the second source region, and a third gate electrode arranged between the second source region and the second drain region. The first and third gate electrodes are supplied with a first control signal. The second gate electrode is supplied with a second control signal.

Abstract: A circuit includes a memory array with memory cells arranged in a matrix of rows and columns, where each row includes a word line connected to the memory cells of the row, and each column includes a bit line connected to the memory cells of the column. Computational weights for an in-memory compute operation (IMCO) are stored in the memory cells. A word line control circuit simultaneously actuates word lines in response to input signals providing coefficient data for the IMCO by applying word line signal pulses. A column processing circuit connected to the bit lines processes analog signals developed on the bit lines in response to the simultaneous actuation of the word lines to generate multiply and accumulate output signals for the IMCO. Pulse widths of the signal pulses are modulated to compensate for cell drift. The IMCO further handles positive/negative calculation for the coefficient data and computational weights.

Abstract: A programmable logic circuit includes multiple logic blocks that are connected communicatively, wherein multiple modules are reconfigured in any of the logic blocks, and wherein the modules include a first module that is being executed and a second module that is not being executed, and start of execution of the second module is delayed from a start time point of execution of the first module so as to obtain a state in which a first time at which the first module accesses a memory does not overlap a second time at which the second module accesses the memory.

Abstract: A fast burst program sequence that reduces overall NAND flash programming time is disclosed. The burst program sequence includes maintaining a charge pump in an ON state and not fully discharging the WL/BLs at the conclusion of the programming phase of each program operation. As a result, the fast burst program sequence provides total program time savings over an existing cache program sequence by eliminating the full WL/BL discharge and charge pump reset that conventionally occurs after each program operation, which in turn, allows for the transfer of next page data from the page buffer to the data latches to be hidden within the program time of a prior/current program operation.

Abstract: Various implementations described herein relate to systems and methods for programming data, including determining a target row corresponding to a program command and setting row-based programming parameters for the target row using target physical device parameters of the target row and optimized programming parameters corresponding to the physical device parameters.

Abstract: A semiconductor device includes a memory core circuit configured to generate core data from bank data outputted by a bank or generate the core data from a dummy column address based on a read operation for the bank. The semiconductor device also includes a data control circuit configured to generate a switching signal from a bank active signal or a dummy bank address based on the read operation for the bank and and configured to control the output of the core data based on the switching signal.

Abstract: To provide a semiconductor device further reduced in size. A semiconductor device including: a multilayer wiring board one surface of which is provided with an external connection terminal; and a plurality of active components that are provided to be stacked inside the multilayer wiring board and are connected to the external connection terminal via a connection via. The plurality of active components include a first active component provided on another surface side that is opposite to the one surface, and a second active component that is provided closer to the one surface than the first active component is and has a smaller planar area than the first active component.

Abstract: First data is read out of a core storage array of a memory component over a first time interval constrained by data output bandwidth of the core storage array. After read out from the core storage array, the first data is output from the memory component over a second time interval that is shorter than the first time interval and that corresponds to a data transfer bandwidth greater than the data output bandwidth of the core storage array.

Abstract: A semiconductor memory device having a flexible refresh skip area includes a memory cell array including a plurality of rows to store data, a row decoder connected to the memory cell array, a refresh area storage unit to store a beginning address and an end address of a memory area that is to be refreshed in which the memory area that is to be refreshed does not include a refresh skip area having a size is selectively and/or adaptively changed, and a refresh control circuit connected to the row decoder and the refresh area storage unit. The refresh control circuit controls a refresh operation for the area that is to be refreshed and not for the refresh skip area.

Abstract: An apparatus, a memory device, and a method for storing parameter codes with respect to asymmetric on-die-termination (ODT) are provided. The apparatus is connected to an external device via a signal line, and includes: an on-die termination (ODT) circuit set in a first ODT state; a plurality of signal pins, each of which is connected to the signal line; and an ODT control circuit configured to: identify whether a second ODT state of the external device corresponds to the first ODT state, and based on the apparatus being an asymmetric ODT in which the first ODT state and the second ODT state are different, provide an asymmetric ODT parameter code to the external device, and disable the ODT circuit when a signal is not transmitted through the signal line.

Abstract: A processor-implemented data processing method includes: generating compressed data of first matrix data based on information of a distance between valid elements included in the first matrix data; fetching second matrix data based on the compressed data; and generating output matrix data based on the compressed data and the second matrix data.

Abstract: A controller includes a central processing unit (CPU) configured to insert a latest received logical address, received together with a write command and data from a host, into a logical address list; a hotness determining circuit configured to assign a maximum weight to the latest received logical address, decrease weights of received logical addresses included in the logical address list by a decay factor, and sum weights of the received logical addresses having values, equal to a value of the latest received logical address, to determine hotness of the latest received logical address; and a parameter adjustment circuit decreasing a magnitude of the decay factor based on the repeatability index of the received logical addresses included in the logical address list, wherein the CPU is configured to control the memory device to store the data in one of the memory regions based on the hotness.

Abstract: Methods and systems are disclosed for calibrating, by a memory interface system, an interface with dynamic random-access memory (DRAM) using a dynamically changing training clock. Techniques disclosed comprise receiving a system clock having a clock signal at a first pulse rate. Then, during the training of the interface, techniques disclosed comprise generating a training clock from the clock signal at the first pulse rate, the training clock having a clock signal at a second pulse rate, and sending, based on the generated training clock, command signals, including address data, to the DRAM.

Abstract: A memory system includes a first memory and a second memory that share common addresses received from a memory controller, wherein the first memory includes a first scrambling circuit suitable for scrambling a common address to generate a first scrambled address designating a word line to be activated in the first memory, and the second memory includes a second scrambling circuit suitable for scrambling the common address to generate a second scrambled address designating a word line to be activated in the second memory, and the first scrambling circuit and the second scrambling circuit perform a scrambling operation in such a manner that neighboring word lines, adjacent to a word line selected by a first common address, are selected a most in one memory among the first memory and the second memory by a second common address other than the first common address.

Abstract: In some embodiments, an integrated circuit may include a substrate and a memory array disposed on the substrate, where the memory array includes a plurality of discrete memory banks. The integrated circuit may also include a processing array disposed on the substrate, where the processing array includes a plurality of processor subunits, each one of the plurality of processor subunits being associated with one or more discrete memory banks among the plurality of discrete memory banks. The integrated circuit may also include a controller configured to implement at least one security measure with respect to an operation of the integrated circuit and take one or more remedial actions if the at least one security measure is triggered.

Abstract: A memory is provided that includes multiple memory banks, each one of the memory banks being associated with a read multiplexer. A first read multiplexer couples a first plurality of bit lines to a first sense node pair, and a second read multiplexer couples a second plurality of bit lines to a second sense node pair. A first sense amplifier is coupled to the first sense node pair. The second sense node pair may be coupled to the same sense amplifier or a different sense amplifier.

Abstract: Methods, systems, and devices for edgeless memory clusters are described. Systems, devices, and techniques are described for eliminating gaps between clusters by creating groups (e.g., domains) of clusters that are active at a given time, and using drivers within inactive clusters to perform array termination functions for abutting active clusters. Tiles on the edges of a cluster may have drivers that operate both for the cluster, and for a neighboring cluster, with circuits (e.g., a multiplexers) on the drivers to enable operations for both clusters.

Abstract: An interface circuit, a data transmission circuit and a memory are provided. The interface circuit includes a clock pad, data pads and input buffer circuits, where the clock pad and the data pads are arranged in the first row, and the M data pads are arranged on two sides of the clock pad, half of the M data pads being arranged on each side, where the M input buffer circuits are arranged in the second row and form an axis perpendicular to the first row with the data pads as reference, and the M input buffer circuits are arranged on two sides of the axis, half of the M input buffer circuits being arranged on each side, and where the distance between each input buffer circuit and the axis is smaller than the distance between the data pad corresponding to the input buffer circuit and the axis.

Abstract: A memory chip may include: a plurality of memory banks; a data storage configured to store access information indicative of access operations for one or more segments of the plurality of memory banks; and a refresh controller configured to perform a refresh operation of the one or more segments based, at least in part, on the stored access information.

Abstract: A pipe latch circuit may include first and second latching circuit groups. The first latching circuit group may control a latching operation and an output operation based on a plurality of pipe input control signals. The second latching circuit group may control a latching operation and an output operation based on the plurality of pipe input control signals and a plurality of pipe output control signals.

Abstract: A processor circuit sends a read request. A clock signal of the processor circuit corresponds to a first counting value. A memory circuit stores data and sends a data strobe signal in response to the read request. The data strobe signal corresponds to a second counting value. The processor circuit includes a selector circuit and a feedback circuit. The selector circuit selects and outputs a flag signal from a plurality of flag control signals according to the second counting value. The feedback circuit generates an enable signal according to a set signal associated with the first counting value, the flag signal associated with the second counting value, and a data strobe gate signal, and generates the data strobe gate signal according to the enable signal and the data strobe signal. The processor circuit reads the data according to the data strobe gate signal.

Abstract: A memory module including a memory array of storage transistors and a control circuit where the control circuit includes a memory interface for providing high bandwidth access to the memory array on serial data lanes. In some embodiments, the control circuit of a memory module includes multiple transceivers for connecting to serial data lanes. In one embodiment, the memory interface of a memory module configures some transceivers for host connection or for upstream connection to an upstream memory module and configures other transceivers for downstream connection to a downstream memory module. In other embodiments, a multi-module memory device is formed using multiple memory modules connected in a cascade configuration or in a star configuration to provide high bandwidth memory access to all memory locations of the multiple memory modules using the given number of serial data lanes of the host connection.

Abstract: Memory devices and methods of operating memory devices in which refresh management operations can be scheduled on an as-needed basis for those memory portions where activity (e.g., activations in excess of a predetermined threshold) warrants a refresh management operation are disclosed. In one embodiment, an apparatus comprises a memory including a memory location, and circuitry configured to determine a count corresponding to a number of activations at the memory location, to schedule a refresh management operation for the memory location in response to the count exceeding a first predetermined threshold, and to decrease the count by an amount corresponding to the first predetermined threshold in response to executing the scheduled refresh management operation. The circuitry may be further configured to disallow, in response to determining that the count has reached a maximum permitted value, further activations at the memory location until after the count has been decreased.

Abstract: A semiconductor memory device comprises: a substrate; a first conductive layer separated from the substrate in a first direction and extending in a second direction; a second and a third conductive layers separated from the substrate and the first conductive layer in the first direction and aligned in the second direction; a first semiconductor layer facing the first and the second conductive layers; a second semiconductor layer facing the first and the third conductive layers; a first and a second bit lines electrically connected to the first and the second semiconductor layers. At least some of operation parameters in the case of a certain operation being executed on a memory cell corresponding to the first conductive layer differ from at least some of operation parameters in the case of the certain operation being executed on a memory cell corresponding to the second conductive layer or the third conductive layer.