With Diffraction Grating (bragg Reflector) Patents (Class 372/50.11)
  • Patent number: 11428961
    Abstract: A variable wavelength light source and an apparatus including the same are disclosed. The variable wavelength light source includes: a first waveguide; a second waveguide spaced apart from the first waveguide; a first optical amplifier including a first gain medium; and a second optical amplifier including a second gain medium that is different from the first gain medium.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: August 30, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Changbum Lee, Changgyun Shin, Byounglyong Choi
  • Patent number: 11424597
    Abstract: A vertical-cavity surface-emitting laser (VCSEL) has a substrate formed of GaAs. A pair of mirrors is provided wherein one of the pair of mirrors is formed on the substrate. A tunnel junction is formed between the pair of mirrors.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: August 23, 2022
    Assignee: OEPIC Semiconductors, Inc.
    Inventors: Ping-Show Wong, Jingzhou Yan, Ta-Chung Wu, James Pao, Majid Riaziat
  • Patent number: 11336075
    Abstract: A light emitting device comprises: a semiconductor laser element; a base portion comprising: a bottom portion on which the semiconductor laser element is located, and a frame portion comprising a step and surrounding the semiconductor laser element; and a light reflecting member disposed on the bottom portion of the base portion so as to lean against the step, the light reflecting member being configured to reflect light from the semiconductor laser element.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: May 17, 2022
    Assignee: NICHIA CORPORATION
    Inventors: Masatoshi Nakagaki, Kazuma Kozuru
  • Patent number: 11280884
    Abstract: A LIDAR instrument and a method for operating a LIDAR instrument are disclosed. In an embodiment a LIDAR instrument includes a transmitter including a narrow band laser diode configured to emit light in a spectral envelope of 2 nm or less around a central wavelength, wherein the spectral envelope overlaps with an atmospheric molecular absorption band in which a solar radiation is attenuated by at least 3 dB compared to an adjacent non-spectrally-attenuated wavelength band, wherein molecular absorption in the atmospheric molecular absorption band is due to water vapor, carbon dioxide, oxygen, ozone methane, or nitrous oxide and wherein the atmospheric molecular absorption band is located between 700 nm and 10,000 nm, and a detector including a filter configured to receive a reflected light in a band of 5 nm or less around the central wavelength.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: March 22, 2022
    Assignee: PHOTODIGM INC.
    Inventor: John Edward Spencer
  • Patent number: 11275245
    Abstract: Embodiments of the present disclosure describe light emitting displays having a light emitter layer that includes an array of light emitters and a wafer having a driving circuit coupled with the light emitter layer, computing devices incorporating the light emitting displays, methods for formation of the light emitting displays, and associated configurations. A light emitting display may include a light emitter layer that includes an array of light emitters and a wafer coupled with the light emitter layer, where the wafer includes a driving circuit formed thereon to drive the light emitters. Other embodiments may be described and/or claimed.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: March 15, 2022
    Assignee: Intel Corporation
    Inventors: Khaled Ahmed, Ali Khakifirooz
  • Patent number: 11262605
    Abstract: A monolithic PIC including a monolithic laser formed in/on a platform and a polymer modulator monolithically built onto the platform and optically coupled to the laser. The modulator includes a first cladding layer, a passive core region with a surface abutting a surface of the first cladding layer, the core region extending to define an input and an output for the modulator. A shaped electro-optic polymer active component has a surface abutting a surface of a central portion of the core region. The active component is polled to align dipoles and promote modulation of light and has a length that extends only within a modulation area defined by modulation electrodes. A second cladding layer encloses the active component and is designed to produce adiabatic transition of light waves traveling in the core region into the active component to travel the length thereof and return to the core region.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: March 1, 2022
    Assignee: Lightwave Logic Inc.
    Inventors: Michael Lebby, Yasufumi Enami
  • Patent number: 11245249
    Abstract: A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.
    Type: Grant
    Filed: February 27, 2019
    Date of Patent: February 8, 2022
    Assignee: RICOH COMPANY, LTD.
    Inventors: Takeshi Kawashima, Shunichi Sato, Morimasa Kaminishi, Hirokazu Iwata
  • Patent number: 11195876
    Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: December 7, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Vladimir Odnoblyudov, Martin F. Schubert
  • Patent number: 11183568
    Abstract: Disclosures of the present invention mainly describe a two-dimensional semiconductor device (TDSD), comprising: a two-dimensional semiconductor material (TDSM) layer, a superacid action layer and a superacid solution. The TDSM layer is made of a transition-metal dichalcogenide, and the superacid action layer is formed on the TDSM layer. Particularly, an oxide material is adopted for making the superacid action layer, such that the superacid solution is subsequently applied to the superacid action layer so as to make the superacid solution gets into the superacid action layer by diffusion effect. Experimental data have proved that, letting the superacid solution diffuse into the superacid action layer can not only apply a chemical treatment to the TDSM layer, but also make the TDSD have a luminosity enhancement. Particularly, the luminosity enhancement would not be reduced even if the TDSD contacts with water and/or organic solution during other subsequent manufacturing processes.
    Type: Grant
    Filed: October 9, 2019
    Date of Patent: November 23, 2021
    Assignee: National Tsing Hua University
    Inventors: I-Tung Chen, Ying-Yu Lai, Chun-An Chen, Xin-Quan Zhang, Yi-Hsien Lee
  • Patent number: 11163120
    Abstract: A package assembly includes a silicon photonics chip having an optical waveguide exposed at a first side of the chip and an optical fiber coupling region formed along the first side of the chip. The package assembly includes a mold compound structure formed to extend around second, third, and fourth sides of the chip. The mold compound structure has a vertical thickness substantially equal to a vertical thickness of the chip. The package assembly includes a redistribution layer formed over the chip and over a portion of the mold compound structure. The redistribution layer includes electrically conductive interconnect structures to provide fanout of electrical contacts on the chip to corresponding electrical contacts on the redistribution layer. The redistribution layer is formed to leave the optical fiber coupling region exposed. An optical fiber is connected to the optical fiber coupling region in optical alignment with the optical waveguide within the chip.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: November 2, 2021
    Assignee: Ayar Labs, Inc.
    Inventors: Shahab Ardalan, Michael Davenport, Roy Edward Meade
  • Patent number: 11099451
    Abstract: Some embodiments are directed to a light modulator comprising transparent or reflective substrates, multiple electrodes being applied to the substrates in a pattern across the substrate. A controller may apply an electric potential to the electrodes to obtain an electro-magnetic field between the electrodes providing electrophoretic movement of the particles towards or from an electrode.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: August 24, 2021
    Assignee: ELSTAR DYNAMICS PATENTS B.V.
    Inventors: Romaric Mathieu Massard, Anthony John Slack, Lennart Ten Kate
  • Patent number: 11081860
    Abstract: The present invention discloses an integrated broadband chaotic semiconductor laser using optical microcavities. The arc-shaped hexagonal laser outputs light. Part of the light is totally reflected through the deformed microcavity and then reflected out of the deformed microcavity from the passive waveguide II; after entering the passive feedback waveguide, another part of the light is fed back into the deformed microcavity by the high reflection film, passes through an in-cavity ray track and then is also reflected out of the deformed microcavity from the passive waveguide II; the two-path light is coupled into the arc-shaped hexagonal laser, and finally generated chaotic laser light is directionally coupled and output through the passive waveguide I at the other end of the arc-shaped hexagonal laser. The present invention has wide broadband, flat spectrum, compact structure, and no time delay signature.
    Type: Grant
    Filed: March 31, 2020
    Date of Patent: August 3, 2021
    Assignee: TAIYUAN UNIVERSITY OF TECHNOLOGY
    Inventors: Anbang Wang, Yixuan Wang, Yuncai Wang, Yuanyuan Guo, Longsheng Wang, Tong Zhao
  • Patent number: 11081856
    Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: August 3, 2021
    Assignee: Cisco Technology, Inc.
    Inventors: Jock T. Bovington, Vipulkumar K. Patel, Dominic F. Siriani
  • Patent number: 11075315
    Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: July 27, 2021
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Masahiro Hitaka, Akio Ito, Tatsuo Dougakiuchi, Kazuue Fujita, Tadataka Edamura
  • Patent number: 10910792
    Abstract: Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: February 2, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-jae Shin, Dong-hyun Kim, Seong-gu Kim, In-sung Joe, Kyoung-ho Ha
  • Patent number: 10855055
    Abstract: A VCSEL array has VCSELs on a semiconductor substrate and has a prismatic or Fresnel optical structure, which is arranged to transform laser light to provide a continuous illumination pattern in a reference plane. The optical structure increases a size of the illumination pattern in comparison to an untransformed illumination pattern. The optical structure is arranged such that each VCSEL illuminates a sector of the pattern. Sub-surfaces of the optical structure with different height above the semiconductor substrate are arranged next to each other. Each VCSEL is associated with a sub-surface. A distance between each VCSEL and a size of its sub-surface is arranged such that the VCSEL illuminates only a part of the sub-surface without illuminating one of the steps. The VCSEL array has an array of microlenses, each VCSEL being associated with a microlens arranged to collimate the laser light after traversing the optical structure.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: December 1, 2020
    Assignee: TRUMPF PHOTONIC COMPONENTS GMBH
    Inventors: Pascal Jean Henri Bloemen, Stephan Gronenborn
  • Patent number: 10833213
    Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: November 10, 2020
    Assignee: Juniper Networks, Inc.
    Inventors: Erik Johan Norberg, Anand Ramaswamy, Brian Robert Koch
  • Patent number: 10826274
    Abstract: A vertical-cavity surface-emitting laser (VCSEL) may include at least one layer forming a grating structure with a selected period, depth, and fill factor, wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: November 3, 2020
    Assignee: Lumentum Operations LLC
    Inventors: Pengfei Qiao, Chien-Yao Lu
  • Patent number: 10811842
    Abstract: A distributed feedback laser, including: a ridge waveguide; two upper electrodes disposed on two sides of the ridge waveguide, respectively; two lower electrodes disposed on two sides of the upper electrodes, respectively; a substrate; a second waveguide cladding layer; an active layer; and a first waveguide cladding layer. The first waveguide cladding layer is n-doped and includes a conductive layer and a refractive layer disposed on the conductive layer. The refractive index of the refractive layer is greater than the refractive index of the active layer. The ridge waveguide includes a ridge region formed by a middle part of the refractive layer. The ridge region includes a surface provided with Bragg gratings. Two grooves are formed between the ridge waveguide and the upper electrodes. The conductive layer is connected to the upper electrodes. The second waveguide cladding layer includes one or more current restricted areas.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: October 20, 2020
    Assignees: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Qiaoyin Lu, Pengfei Zhang, Weihua Guo
  • Patent number: 10754157
    Abstract: A method for producing an optical element includes a) providing a first shell which is transparent in the predetermined wavelength range, b) applying a coating which is optically effective for the predetermined wavelength range onto the structured portion, c) providing a second shell which is transparent in the predetermined wavelength range, which shell has an integral embodiment and a smooth lower side which has a complementary form to the form of the upper side, d) applying an adhesive layer which is transparent in the predetermined wavelength range onto the upper side of the first shell and/or the lower side of the second shell, and e) connecting the upper side of the first shell with the lower side of the second shell by means of the adhesive layer such that a two-shell optical element is produced, in which the optically effective structure is buried.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: August 25, 2020
    Assignee: tooz technologies GmbH
    Inventors: Jens Hofmann, Gerhard Kelch, Wolf Krause, Joerg Puetz, Georg Michels
  • Patent number: 10690848
    Abstract: The present disclosure relates to shaping of optic beams at the inputs/outputs of a photonic chip, the spectral widening of the light coupled to this chip, and a method for manufacturing the chip. The photonic chip includes a light guiding layer supported by a substrate. The chip includes at least one light guiding structure made of silicon coupled on one side to a vertical coupler and on another side to an optical component integrated in the light guiding layer. The photonic chip has a front face on the vertical coupler side and a rear face on the substrate side. A collimation structure of digital lens type is integrated at the level of the rear face to collimate the mode size of the light beam incident on the lens and coming from the vertical coupler.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: June 23, 2020
    Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Sylvie Menezo, Salim Boutami, Bruno Mourey
  • Patent number: 10622512
    Abstract: Disclosed is a light emitting diode comprising; a substrate having a front side and a back side; a first conductive type semiconductor layer having a front side and a back side, and formed on the back side of the substrate; a second conductive type semiconductor layer having a front side and a back side, and formed on the back side of the first conductive type semiconductor layer; an active layer having a short wavelength band of 315 to 420 nm, and formed between the back side the first conductive type semiconductor layer and the front side of the second conductive type semiconductor layer; a plurality DBR unit layers having a front side and a back side, and comprising a low refractive index layer and a high refractive index layer adjacent to the low refractive index layer; and a metal reflective layer having a front side and a back side, and formed on the back side of the plurality DBR unit layers, wherein an intermediate layer for improving ohmic contact, and formed between the back side of the plurality DB
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: April 14, 2020
    Assignee: LUMENS CO., LTD.
    Inventor: Dae Won Kim
  • Patent number: 10581223
    Abstract: A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: March 3, 2020
    Assignee: TrueLight Corporation
    Inventors: Chien Hung Pan, Cheng Zu Wu
  • Patent number: 10541512
    Abstract: The present invention is a surface emitting laser luminescent diode structure which is characterized in that a recess comprises two tilted slopes on two sides and a protruding trapezoidal cylinder located at the bottom center of the recess is disposed at the bottom of a laser resonant cavity. Thus, a reflecting mirror disposed along the surface of the recess includes two tilted side surfaces as leak-proof sides, which reduces the divergence angle and avoid the lateral light leakage. Additionally, a current isolating layer is disposed on the reflecting mirror and is designed to satisfy the condition (¼*wavelength*1/refractive index) of an optical film, thereby allowing the reflecting mirror to receive an excellent reflectance. Besides, the current isolating layer limits the flow direction of the current, thus increasing operating speed.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: January 21, 2020
    Assignee: High Power Opto. Inc.
    Inventors: Wei-Yu Yen, Li-Ping Chou, Tau-Jin Wu, Chih-Sung Chang
  • Patent number: 10461507
    Abstract: A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.
    Type: Grant
    Filed: April 4, 2018
    Date of Patent: October 29, 2019
    Assignee: Mellanox Technologies, Ltd.
    Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Elad Mentovich
  • Patent number: 10447003
    Abstract: A system and method for stabilizing and combining multiple emitted beams into a single system using both WBC and WDM techniques.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: October 15, 2019
    Assignee: TERADIODE, INC.
    Inventors: Parviz Tayebati, Bien Chann
  • Patent number: 10431703
    Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.
    Type: Grant
    Filed: March 21, 2018
    Date of Patent: October 1, 2019
    Assignee: Juniper Networks, Inc.
    Inventors: Erik Johan Norberg, Anand Ramaswamy, Brian Robert Koch
  • Patent number: 10396529
    Abstract: A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: August 27, 2019
    Assignee: Finisar Corporation
    Inventors: Jim Tatum, Gary Landry
  • Patent number: 10381222
    Abstract: A substrate treatment method of performing a plurality of predetermined treatments on a substrate to form a plurality of patterns stacked on the substrate, the substrate treatment method includes: a calculation step of calculating, about patterns in two layers stacked on the substrate, a mutual pattern displacement amount being a displacement amount between the patterns in the two layers, based on an end portion positional displacement of a pattern in an upper layer, an end portion positional displacement of a pattern in a lower layer, and an overlay of the patterns in the two layers; and a correction step of correcting, when the mutual pattern displacement amount exceeds a predetermined threshold, treatment conditions in the predetermined treatments to make the mutual pattern displacement amount fall within the predetermined threshold.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: August 13, 2019
    Assignee: Tokyo Electron Limited
    Inventor: Shinji Kobayashi
  • Patent number: 10355449
    Abstract: A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: July 16, 2019
    Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
    Inventor: Arkadiy Lyakh
  • Patent number: 10348056
    Abstract: Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for outcoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grating operatively connected to the waveguiding region, wherein the grating comprises a plurality of bridges and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grating is non-zero, wherein the coupling parameter P of a trench is defined by the equation, wherein dres is a distance of the trench to the active layer, w is a width of the trench and ?n is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: July 9, 2019
    Assignee: FORSCHUNGSVERBUND BERLIN E.V.
    Inventors: Jörg Fricke, Götz Erbert, Paul Crump, Jonathan Decker
  • Patent number: 10324258
    Abstract: A light emitting device, an optical module and a manufacturing method thereof are disclosed. According to an example of the disclosure, the light emitting device may comprise an optical waveguide chip, a light emitting chip and a grating between the light emitting chip and the optical waveguide chip. The light emitting chip may emit laser light. The grating may couple the laser light emitted from the active layer into the optical waveguide chip in a way that the laser light is output along a length direction of the optical waveguide chip.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: June 18, 2019
    Assignees: Hisense Broadband Multimedia Technologies Co., Ltd., Hisense Broadband Multimedia Technologies, Ltd., Huazhong University of Science and Technology
    Inventors: Xun Li, Zekun Lin, Hua Zhang
  • Patent number: 10288940
    Abstract: An optical element includes, on a surface thereof, a plurality of structural bodies which extend in a first direction, where the plurality of structural bodies are aligned at a pitch of a sub-wavelength in a second direction which intersects with the first direction, and the widths of the structural bodies are changed periodically.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: May 14, 2019
    Assignee: Sony Corporation
    Inventors: Kazuya Hayashibe, Shunichi Kajiya
  • Patent number: 10281746
    Abstract: An optical transmitter includes a reflective semiconductor optical amplifier (RSOA) coupled to an input end of a first optical waveguide. An end of the first optical waveguide provides a transmitter output for the optical transmitter. Moreover, a section of the first optical waveguide between the input end and the output end is optically coupled to a ring modulator that modulates an optical signal based on an electrical input signal. A passive ring filter (or a 1×N silicon-photonic switch and a bank of band reflectors) is connected to provide a mirror that reflects light received from the second optical waveguide back toward the RSOA to form a lasing cavity. Moreover, the ring modulator and the passive ring filter have different sizes, which causes a Vernier effect that provides a large wavelength tuning range for the lasing cavity in response to tuning the ring modulator and the passive ring filter.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: May 7, 2019
    Assignee: Oracle International Corporation
    Inventors: Xuezhe Zheng, Ying Luo, Jin Yao, Ashok V. Krishnamoorthy
  • Patent number: 10271904
    Abstract: A system and method for selectively processing target tissue material in a patient include a laser subsystem for generating an output laser beam and a catheter assembly including an optical fiber for guiding the output laser beam. The beam has a predetermined selected wavelength between 900 nm and 2600 nm. The catheter assembly is sized to extend through an opening in a first part of the patient to a tissue material processing site within the patient. A beam delivery and focusing subsystem includes a focal distance, which may be adjustable, that positions the beam into at least one focused spot on the target tissue material disposed within a second part of the patient for a duration sufficient to allow laser energy to be absorbed by the target tissue material and converted to heat to produce a desired physical change in the target tissue material without causing undesirable changes to adjacent non-target material.
    Type: Grant
    Filed: May 21, 2015
    Date of Patent: April 30, 2019
    Assignee: OMNI MEDSCI, INC.
    Inventor: Mohammed N. Islam
  • Patent number: 10263394
    Abstract: A high-speed, single-mode, high power, reliable and manufacturable wavelength-tunable light source operative to emit wavelength tunable radiation over a wavelength range contained in a wavelength span between about 950 nm and about 1150 nm, including a vertical cavity laser (VCL), the VCL having a gain region with at least one compressively strained quantum well containing Indium, Gallium, and Arsenic.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: April 16, 2019
    Assignees: Praevium Research, Inc., Thorlabs, Inc.
    Inventors: Vijaysekhar Jayaraman, Christopher Burgner, Demis John, Peter Heim, Alex Ezra Cable
  • Patent number: 10243326
    Abstract: A waveguide includes a narrow waveguide, wide waveguides, and tapered waveguides. A width Ww of the wide waveguides is wider than A width Wn of the narrow waveguide. The tapered waveguides have their width continuously varying so as to couple the narrow waveguide and the wide waveguides, respectively. Assuming a length of the waveguide as L and an area as S, Ks=S/(Wn·L) and 1<ks?1.5 are satisfied.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: March 26, 2019
    Assignee: Renesas Electronics Corporation
    Inventor: Kazuhisa Fukuda
  • Patent number: 10209603
    Abstract: A switching optical antenna that includes: a waveguide including a light input end and a light output end; a ring waveguide coupled with the waveguide through a first directional coupler; a diffraction grating that is disposed within the ring waveguide and that is coupled with the ring waveguide through a second directional coupler; and a refractive index adjusting section that changes a refractive index of at least a portion of the ring waveguide.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: February 19, 2019
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Daisuke Inoue, Hiroyuki Matsubara, Tadashi Ichikawa
  • Patent number: 10205304
    Abstract: A high-speed, single-mode, high power, reliable and manufacturable wavelength-tunable light source operative to emit wavelength tunable radiation over a wavelength range contained in a wavelength span between about 950 nm and about 1150 nm, including a vertical cavity laser (VCL), the VCL having a gain region with at least one compressively strained quantum well containing Indium, Gallium, and Arsenic.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: February 12, 2019
    Assignees: PRAEVIUM RESEARCH, INC., THORLABS, INC.
    Inventors: Vijaysekhar Jayaraman, Christopher Burgner, Demis John, Peter Heim, Alex Ezra Cable
  • Patent number: 10177274
    Abstract: A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer 112; an active layer 114 on the first conductive type first semiconductor layer 112; a second conductive type third semiconductor layer 116 on the active layer 114; a second conductive type fourth semiconductor layer 124 on the second conductive type third semiconductor layer 116; and a second conductive type fifth semiconductor layer 125 on the second conductive type fourth semiconductor layer 124. The second conductive type fifth semiconductor layer 125 may include a superlattice structure of a GaP layer 125a/InxGa1-xP layer (0?x?1) 125b.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: January 8, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Yong Jun Kim, Sung Wook Moon
  • Patent number: 10164406
    Abstract: A tunable laser device comprises a multi-section distributed feedback (DFB) laser having a first Bragg section including a waveguide and a Bragg grating, a second Bragg section comprising a waveguide and a Bragg grating, and a phase section being longitudinally located between the first Bragg section and the second Bragg section. The phase section is made of a passive material, and each Bragg section has a first longitudinal end joining the phase section and a second longitudinal end opposed to the phase section. The Bragg grating of at least one Bragg section has a grating coupling coefficient which decreases from the first longitudinal end to the second longitudinal end of the at least one Bragg section.
    Type: Grant
    Filed: February 4, 2015
    Date of Patent: December 25, 2018
    Assignee: ALCATEL LUCENT
    Inventors: Nicolas Chimot, Helene Debregeas-Sillard
  • Patent number: 10128637
    Abstract: A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of microelectromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: November 13, 2018
    Assignee: InPhenix, Inc.
    Inventors: Toshihiko Makino, Tongning Li, David Eu
  • Patent number: 10078268
    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: September 18, 2018
    Assignee: ASML Netherlands B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Patent number: 10079474
    Abstract: A vertical-cavity surface-emitting laser (VCSEL) includes first reflector having a first reflectivity; a second reflector having a second reflectivity, where the second reflectivity is less than the first reflectivity; a gain region between the first and second reflectors; and a substrate having a first surface and a second surface, where the first surface is coupled to the second reflector, and where the second surface is formed into a lens to act upon light emitted the VCSEL through the substrate. The VCSEL lases in a single transverse mode.
    Type: Grant
    Filed: September 22, 2014
    Date of Patent: September 18, 2018
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Michael Renne Ty Tan, Wayne V Sorin, Sagi V Mathai
  • Patent number: 10069282
    Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: September 4, 2018
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, You-Da Lin, Christiane Elsass
  • Patent number: 10033158
    Abstract: A semiconductor laser, a laser assembly and a method of making a semiconductor laser are disclosed. In an embodiment the surface-emitting semiconductor laser includes a carrier having a carrier main side mechanically carrying a semiconductor laser; a first Bragg mirror and a second Bragg mirror so that the second Bragg mirror is further away from the carrier than the first Bragg mirror; a semiconductor layer sequence between the first and the second Bragg mirrors having at least one active zone for generating laser radiation; a metal mirror arranged directly on a side of the first Bragg mirror facing the carrier for reflecting laser radiation generated during operation of the semiconductor laser; a bonding agent layer located between the carrier and the semiconductor layer sequence; a resonator oriented perpendicular to the carrier main side; and an electrically insulating passivation layer located in the metal mirror.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: July 24, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Roland Enzmann, Hubert Halbritter, Martin Rudolf Behringer
  • Patent number: 10014660
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: July 3, 2018
    Assignees: Commisariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • Patent number: 9997890
    Abstract: A multisection digital supermode-distributed Bragg reflector (MSDS-DBR) comprising: a plurality P of digital supermode Bragg reflector (DS-DBR) grating sections arranged along a waveguide; wherein each DS-DBR grating section is configured to pass or reflect light over a given spectral region, the given spectral region being different from the spectral regions of the other DS-DBR grating sections; wherein each DS-DBR grating section comprises a plurality M of grating sub-regions, each sub-region corresponding to a spectral sub-band within the spectral region of the DS-DBR grating section, and wherein each grating sub-region includes a positive electrical contact and a negative electrical contact; said grating sub-region being configured to pass or reflect light of its spectral sub-band when an electrical bias is provided between its positive and negative electrical contacts.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: June 12, 2018
    Assignee: Rockley Photonics Limited
    Inventor: Aaron John Zilkie
  • Patent number: 9917417
    Abstract: A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: March 13, 2018
    Assignee: Skorpios Technologies, Inc.
    Inventors: Guoliang Li, Stephen B. Krasulick, Damien Lambert
  • Patent number: 9893816
    Abstract: Apparatuses including integrated circuit (IC) optical assemblies and processes for operation of IC optical assemblies are disclosed herein. In some embodiments, the IC optical assemblies include a transmitter component to provide light output having a particular beam direction, and a transmitter driver component. The transmitter component includes a light source optically coupled to a plurality of waveguides, a plurality of gratings, and a plurality of phase tuners. The transmitter driver component causes a light provided by the light source to be centered at a particular wavelength and a particular phase to be induced by each phase tuner of the plurality of phase tuners on a respective waveguide of the plurality of waveguides, in accordance with a feedback signal, to generate the light output having the particular beam direction.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: February 13, 2018
    Assignee: Intel Corporation
    Inventors: Woosung Kim, Myung Jin Yim