Abstract: Provided are a master in which a more complicated microstructure is formed, a transferred object obtained by using the master, and a method of producing the master. A plurality of concave-convex groups each including a plurality of concavities or convexities are provided on a base material apart from each other. Average widths of areas occupied by the concavities or convexities at a surface of the base material are smaller than or equal to a wavelength belonging to a visible light band. Formed lengths of the concavities or convexities from the surface of the base material in each of the concave-convex groups each belong to any of at least two or more groups having different central values.

Abstract: Configurations for an edge-generated vertical emission laser that vertically emits light and fabrication methods of the edge-generated vertical emission laser are disclosed. The edge-generated vertical emission laser may include a distributed feedback (DFB) laser structure, a grating coupler, and contact layers. Light may propagate through the DFB laser structure, approximately parallel to the top surface of the edge-generated vertical emission laser and be directed by the grating coupler toward the top surface of the edge-generated vertical emission laser. The light may vertically emit from the edge-generated vertical emission laser approximately perpendicular to the top surface of the edge-generated vertical emission laser. Additionally, the contact layers may be n-metal and p-metal, which may be located on the same side of the edge-generated vertical emission laser. These features of the edge-generated vertical emission laser may facilitate ease of testing and increased options for packaging.

Abstract: A semiconductor optical device, in which a light emitting region and a modulator region are integrated, includes a first mesa disposed in the light emitting region, protruding in a direction that intersects a light propagation direction, and including an active layer, first and second buried layers disposed on the first mesa in a direction that intersects the light propagation direction and sequentially stacked in a direction in which the first mesa protrudes, a first semiconductor layer disposed on the first mesa and the second buried layer, a second mesa disposed in the modulator region and including a light absorption layer, and a third buried layer disposed on the second mesa. The first semiconductor layer and the first buried layer each have a first conductivity type. The second buried layer has a second conductivity type different from the first conductivity type, and the third buried layer is a semi-insulating semiconductor layer.

Abstract: A semiconductor optical device includes a first facet bounding a first end of the semiconductor optical device. The semiconductor optical device further includes a waveguide having a first end proximate the first facet, the first end of the waveguide being tapered towards the first facet. The first facet has a curvature to increase modal reflectivity at a first interface at which the first end of the waveguide meets the first facet.

Abstract: A spacer includes: an opening through which light passes; an inner side surface forming the opening; and a protruding portion including a plurality of protrusions protruding from the inner side surface. Lengths of the plurality of protrusions vary in a circumferential direction of the protruding portion.

Abstract: The disclosure describes VCSELs operable to produce very narrow divergent light beams. The narrow divergent beam can be obtained, in part, by incorporating an additional epitaxial layer so as to increase the cavity length of the VCSEL. The increased cavity length can result in higher power in fewer larger diameter transverse modes, which can significantly reduce the output beam divergence. The additional epitaxial layer can be incorporated, for example, into a top-emitting VCSEL or bottom-emitting VCSEL.

Abstract: Aspects of the disclosure provide for mechanisms for producing group III-nitride substrates. In accordance with some embodiments, a method for producing a group III-nitride substrate is provided. The method may include: providing a growth template comprising a semiconductor layer of a group III-nitride material with a nonpolar orientation or a semipolar orientation; fabricating a mask on the semiconductor layer for preventing defects in the growth template from propagating into group III-nitride materials grown on the growth template; and forming, on the mask, an epitaxial layer of the group III-nitride with the nonpolar orientation or semipolar orientation. The mask may include a stripe pattern comprising SiO2 and/or SiN. Forming the epitaxial layer of the group III-nitride material may include growing the group III-nitride material in the semipolar orientation or the nonpolar orientation in nitrogen carrier gas.

Abstract: A surface-emitting laser includes a first reflector layer, an active layer provided on the first reflector layer, and a second reflector layer provided on the active layer. The second reflector layer includes a corner reflector that tapers in a direction opposite to the first reflector layer, and the corner reflector has a plan shape of a circle or a polygon with an even number of vertexes.

Abstract: Disclosed is a current-injection organic semiconductor laser diode comprising a pair of electrodes, an optical resonator structure, and one or more organic layers including a light amplification layer composed of an organic semiconductor, which has a sufficient overlap between the distribution of exciton density and the electric field intensity distribution of the resonant optical mode during current injection to emit laser light.

Abstract: A method of manufacturing a surface emitting laser according to an embodiment of the present disclosure includes the following two steps: (1) a step of forming a semiconductor stacked structure on a substrate, the semiconductor stacked structure including an active layer, a first DBR layer of a first electrical conduction type, and a second DBR layer of a second electrical conduction type, the first DBR layer and the second DBR layer sandwiching the active layer, the second electrical conduction type being different from the first electrical conduction type; and (2) a step of forming a mesa section at a portion on the second DBR layer side in the semiconductor stacked structure and then forming an annular diffusion region of the first electrical conduction type at an outer edge of the mesa section by impurity diffusion from a side surface of the mesa section, the mesa section including the second DBR layer, the mesa section not including the active layer.

Abstract: A semiconductor laser in which a PD unit monitoring an optical output is integrated is provided.

Abstract: Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

Abstract: A light source module and a display device are provided. The light source module includes a light-emitting element, a light-guiding plate, and a filter. The light-emitting element includes a light-emitting surface. The light-guiding plate includes a light-incident surface, and the light guide plate is disposed such that the light-incident surface faces the light-emitting surface. The filter is disposed between the light-emitting surface and the light-incident surface, and a center wavelength of a reflection band of the filter falls in a range of 570 nm to 590 nm. The light-emitting element emits a first light having a first color temperature from the light-emitting surface. The first light is filtered into the second light having a second color temperature after it passes through the filter. The light-incident surface of the light-guiding plate receives the second light. The first color temperature is lower than the second color temperature.

Abstract: An optoelectronic device includes a semiconductor stack including a top surface; a current blocking region, including a first pad portion formed on the semiconductor stack and wherein the current blocking region includes transparent insulated material; a first opening, formed in the first pad portion, exposing the top surface of the semiconductor stack; a transparent conductive layer, covering the top surface of the semiconductor stack, including a second opening overlapping the first opening; and a first electrode, formed on the semiconductor stack, including a first pad electrode formed on the first pad portion of the current blocking region; wherein the first pad electrode contacts the semiconductor stack through the first opening and the second opening; wherein the first opening includes a first area, the first pad portion and the first opening compose a total area, and a ratio of the first area to the total area is between 10% and 40%.

Abstract: A variable wavelength light source and an apparatus including the same are disclosed. The variable wavelength light source includes: a first waveguide; a second waveguide spaced apart from the first waveguide; a first optical amplifier including a first gain medium; and a second optical amplifier including a second gain medium that is different from the first gain medium.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) has a substrate formed of GaAs. A pair of mirrors is provided wherein one of the pair of mirrors is formed on the substrate. A tunnel junction is formed between the pair of mirrors.

Abstract: A light emitting device comprises: a semiconductor laser element; a base portion comprising: a bottom portion on which the semiconductor laser element is located, and a frame portion comprising a step and surrounding the semiconductor laser element; and a light reflecting member disposed on the bottom portion of the base portion so as to lean against the step, the light reflecting member being configured to reflect light from the semiconductor laser element.

Abstract: A LIDAR instrument and a method for operating a LIDAR instrument are disclosed. In an embodiment a LIDAR instrument includes a transmitter including a narrow band laser diode configured to emit light in a spectral envelope of 2 nm or less around a central wavelength, wherein the spectral envelope overlaps with an atmospheric molecular absorption band in which a solar radiation is attenuated by at least 3 dB compared to an adjacent non-spectrally-attenuated wavelength band, wherein molecular absorption in the atmospheric molecular absorption band is due to water vapor, carbon dioxide, oxygen, ozone methane, or nitrous oxide and wherein the atmospheric molecular absorption band is located between 700 nm and 10,000 nm, and a detector including a filter configured to receive a reflected light in a band of 5 nm or less around the central wavelength.

Abstract: Embodiments of the present disclosure describe light emitting displays having a light emitter layer that includes an array of light emitters and a wafer having a driving circuit coupled with the light emitter layer, computing devices incorporating the light emitting displays, methods for formation of the light emitting displays, and associated configurations. A light emitting display may include a light emitter layer that includes an array of light emitters and a wafer coupled with the light emitter layer, where the wafer includes a driving circuit formed thereon to drive the light emitters. Other embodiments may be described and/or claimed.

Abstract: A monolithic PIC including a monolithic laser formed in/on a platform and a polymer modulator monolithically built onto the platform and optically coupled to the laser. The modulator includes a first cladding layer, a passive core region with a surface abutting a surface of the first cladding layer, the core region extending to define an input and an output for the modulator. A shaped electro-optic polymer active component has a surface abutting a surface of a central portion of the core region. The active component is polled to align dipoles and promote modulation of light and has a length that extends only within a modulation area defined by modulation electrodes. A second cladding layer encloses the active component and is designed to produce adiabatic transition of light waves traveling in the core region into the active component to travel the length thereof and return to the core region.

Abstract: A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.

Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

Abstract: Disclosures of the present invention mainly describe a two-dimensional semiconductor device (TDSD), comprising: a two-dimensional semiconductor material (TDSM) layer, a superacid action layer and a superacid solution. The TDSM layer is made of a transition-metal dichalcogenide, and the superacid action layer is formed on the TDSM layer. Particularly, an oxide material is adopted for making the superacid action layer, such that the superacid solution is subsequently applied to the superacid action layer so as to make the superacid solution gets into the superacid action layer by diffusion effect. Experimental data have proved that, letting the superacid solution diffuse into the superacid action layer can not only apply a chemical treatment to the TDSM layer, but also make the TDSD have a luminosity enhancement. Particularly, the luminosity enhancement would not be reduced even if the TDSD contacts with water and/or organic solution during other subsequent manufacturing processes.

Abstract: A package assembly includes a silicon photonics chip having an optical waveguide exposed at a first side of the chip and an optical fiber coupling region formed along the first side of the chip. The package assembly includes a mold compound structure formed to extend around second, third, and fourth sides of the chip. The mold compound structure has a vertical thickness substantially equal to a vertical thickness of the chip. The package assembly includes a redistribution layer formed over the chip and over a portion of the mold compound structure. The redistribution layer includes electrically conductive interconnect structures to provide fanout of electrical contacts on the chip to corresponding electrical contacts on the redistribution layer. The redistribution layer is formed to leave the optical fiber coupling region exposed. An optical fiber is connected to the optical fiber coupling region in optical alignment with the optical waveguide within the chip.

Abstract: Some embodiments are directed to a light modulator comprising transparent or reflective substrates, multiple electrodes being applied to the substrates in a pattern across the substrate. A controller may apply an electric potential to the electrodes to obtain an electro-magnetic field between the electrodes providing electrophoretic movement of the particles towards or from an electrode.

Abstract: The present invention discloses an integrated broadband chaotic semiconductor laser using optical microcavities. The arc-shaped hexagonal laser outputs light. Part of the light is totally reflected through the deformed microcavity and then reflected out of the deformed microcavity from the passive waveguide II; after entering the passive feedback waveguide, another part of the light is fed back into the deformed microcavity by the high reflection film, passes through an in-cavity ray track and then is also reflected out of the deformed microcavity from the passive waveguide II; the two-path light is coupled into the arc-shaped hexagonal laser, and finally generated chaotic laser light is directionally coupled and output through the passive waveguide I at the other end of the arc-shaped hexagonal laser. The present invention has wide broadband, flat spectrum, compact structure, and no time delay signature.

Abstract: A laser integrated photonic platform to allow for independent fabrication and development of laser systems in silicon photonics. The photonic platform includes a silicon substrate with an upper surface, one or more through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate. The photonic platform includes a silicon substrate wafer with through silicon vias (TSVs) defined through the silicon substrate, and passive alignment features in the substrate for mating the photonic platform to a photonics integrated circuit. The photonic platform also includes a III-V semiconductor material structure wafer, where the III-V wafer is bonded to the upper surface of the silicon substrate and includes at least one active layer forming a light source for the photonic platform.

Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.

Abstract: Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.

Abstract: A VCSEL array has VCSELs on a semiconductor substrate and has a prismatic or Fresnel optical structure, which is arranged to transform laser light to provide a continuous illumination pattern in a reference plane. The optical structure increases a size of the illumination pattern in comparison to an untransformed illumination pattern. The optical structure is arranged such that each VCSEL illuminates a sector of the pattern. Sub-surfaces of the optical structure with different height above the semiconductor substrate are arranged next to each other. Each VCSEL is associated with a sub-surface. A distance between each VCSEL and a size of its sub-surface is arranged such that the VCSEL illuminates only a part of the sub-surface without illuminating one of the steps. The VCSEL array has an array of microlenses, each VCSEL being associated with a microlens arranged to collimate the laser light after traversing the optical structure.

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) may include at least one layer forming a grating structure with a selected period, depth, and fill factor, wherein the period, the depth, and the fill factor of the grating structure are configured to achieve greater than a threshold level of efficiency for the VCSEL, less than a threshold current increase caused by power loss from higher order diffraction associated with the grating structure, and greater than a threshold polarization selectivity at an emission wavelength of the VCSEL.

Abstract: A distributed feedback laser, including: a ridge waveguide; two upper electrodes disposed on two sides of the ridge waveguide, respectively; two lower electrodes disposed on two sides of the upper electrodes, respectively; a substrate; a second waveguide cladding layer; an active layer; and a first waveguide cladding layer. The first waveguide cladding layer is n-doped and includes a conductive layer and a refractive layer disposed on the conductive layer. The refractive index of the refractive layer is greater than the refractive index of the active layer. The ridge waveguide includes a ridge region formed by a middle part of the refractive layer. The ridge region includes a surface provided with Bragg gratings. Two grooves are formed between the ridge waveguide and the upper electrodes. The conductive layer is connected to the upper electrodes. The second waveguide cladding layer includes one or more current restricted areas.

Abstract: A method for producing an optical element includes a) providing a first shell which is transparent in the predetermined wavelength range, b) applying a coating which is optically effective for the predetermined wavelength range onto the structured portion, c) providing a second shell which is transparent in the predetermined wavelength range, which shell has an integral embodiment and a smooth lower side which has a complementary form to the form of the upper side, d) applying an adhesive layer which is transparent in the predetermined wavelength range onto the upper side of the first shell and/or the lower side of the second shell, and e) connecting the upper side of the first shell with the lower side of the second shell by means of the adhesive layer such that a two-shell optical element is produced, in which the optically effective structure is buried.

Abstract: The present disclosure relates to shaping of optic beams at the inputs/outputs of a photonic chip, the spectral widening of the light coupled to this chip, and a method for manufacturing the chip. The photonic chip includes a light guiding layer supported by a substrate. The chip includes at least one light guiding structure made of silicon coupled on one side to a vertical coupler and on another side to an optical component integrated in the light guiding layer. The photonic chip has a front face on the vertical coupler side and a rear face on the substrate side. A collimation structure of digital lens type is integrated at the level of the rear face to collimate the mode size of the light beam incident on the lens and coming from the vertical coupler.

Abstract: Disclosed is a light emitting diode comprising; a substrate having a front side and a back side; a first conductive type semiconductor layer having a front side and a back side, and formed on the back side of the substrate; a second conductive type semiconductor layer having a front side and a back side, and formed on the back side of the first conductive type semiconductor layer; an active layer having a short wavelength band of 315 to 420 nm, and formed between the back side the first conductive type semiconductor layer and the front side of the second conductive type semiconductor layer; a plurality DBR unit layers having a front side and a back side, and comprising a low refractive index layer and a high refractive index layer adjacent to the low refractive index layer; and a metal reflective layer having a front side and a back side, and formed on the back side of the plurality DBR unit layers, wherein an intermediate layer for improving ohmic contact, and formed between the back side of the plurality DB

Abstract: A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.

Abstract: The present invention is a surface emitting laser luminescent diode structure which is characterized in that a recess comprises two tilted slopes on two sides and a protruding trapezoidal cylinder located at the bottom center of the recess is disposed at the bottom of a laser resonant cavity. Thus, a reflecting mirror disposed along the surface of the recess includes two tilted side surfaces as leak-proof sides, which reduces the divergence angle and avoid the lateral light leakage. Additionally, a current isolating layer is disposed on the reflecting mirror and is designed to satisfy the condition (¼*wavelength*1/refractive index) of an optical film, thereby allowing the reflecting mirror to receive an excellent reflectance. Besides, the current isolating layer limits the flow direction of the current, thus increasing operating speed.

Abstract: A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.

Abstract: A system and method for stabilizing and combining multiple emitted beams into a single system using both WBC and WDM techniques.

Abstract: Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.

Abstract: A VCSEL can include: an active region configured to emit light; a blocking region over or under the active region, the blocking region defining a plurality of channels therein; a plurality of conductive channel cores in the plurality of channels of the blocking region, wherein the plurality of conductive channel cores and blocking region form an isolation region; a top electrical contact; and a bottom electrical contact electrically coupled with the top electrical contact through the active region and plurality of conductive channel cores. At least one conductive channel core is a light emitter, and others can be spare light emitters, photodiodes, modulators, and combinations thereof. A waveguide can optically couple two or more of the conductive channel cores. In some aspects, the plurality of conductive channel cores are optically coupled to form a common light emitter that emits light (e.g., single mode) from the plurality of conductive channel cores.

Abstract: A substrate treatment method of performing a plurality of predetermined treatments on a substrate to form a plurality of patterns stacked on the substrate, the substrate treatment method includes: a calculation step of calculating, about patterns in two layers stacked on the substrate, a mutual pattern displacement amount being a displacement amount between the patterns in the two layers, based on an end portion positional displacement of a pattern in an upper layer, an end portion positional displacement of a pattern in a lower layer, and an overlay of the patterns in the two layers; and a correction step of correcting, when the mutual pattern displacement amount exceeds a predetermined threshold, treatment conditions in the predetermined treatments to make the mutual pattern displacement amount fall within the predetermined threshold.

Abstract: A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

Abstract: Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for outcoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grating operatively connected to the waveguiding region, wherein the grating comprises a plurality of bridges and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grating is non-zero, wherein the coupling parameter P of a trench is defined by the equation, wherein dres is a distance of the trench to the active layer, w is a width of the trench and ?n is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.

Abstract: A light emitting device, an optical module and a manufacturing method thereof are disclosed. According to an example of the disclosure, the light emitting device may comprise an optical waveguide chip, a light emitting chip and a grating between the light emitting chip and the optical waveguide chip. The light emitting chip may emit laser light. The grating may couple the laser light emitted from the active layer into the optical waveguide chip in a way that the laser light is output along a length direction of the optical waveguide chip.

Abstract: An optical element includes, on a surface thereof, a plurality of structural bodies which extend in a first direction, where the plurality of structural bodies are aligned at a pitch of a sub-wavelength in a second direction which intersects with the first direction, and the widths of the structural bodies are changed periodically.

Abstract: An optical transmitter includes a reflective semiconductor optical amplifier (RSOA) coupled to an input end of a first optical waveguide. An end of the first optical waveguide provides a transmitter output for the optical transmitter. Moreover, a section of the first optical waveguide between the input end and the output end is optically coupled to a ring modulator that modulates an optical signal based on an electrical input signal. A passive ring filter (or a 1×N silicon-photonic switch and a bank of band reflectors) is connected to provide a mirror that reflects light received from the second optical waveguide back toward the RSOA to form a lasing cavity. Moreover, the ring modulator and the passive ring filter have different sizes, which causes a Vernier effect that provides a large wavelength tuning range for the lasing cavity in response to tuning the ring modulator and the passive ring filter.

Abstract: A system and method for selectively processing target tissue material in a patient include a laser subsystem for generating an output laser beam and a catheter assembly including an optical fiber for guiding the output laser beam. The beam has a predetermined selected wavelength between 900 nm and 2600 nm. The catheter assembly is sized to extend through an opening in a first part of the patient to a tissue material processing site within the patient. A beam delivery and focusing subsystem includes a focal distance, which may be adjustable, that positions the beam into at least one focused spot on the target tissue material disposed within a second part of the patient for a duration sufficient to allow laser energy to be absorbed by the target tissue material and converted to heat to produce a desired physical change in the target tissue material without causing undesirable changes to adjacent non-target material.

Abstract: A high-speed, single-mode, high power, reliable and manufacturable wavelength-tunable light source operative to emit wavelength tunable radiation over a wavelength range contained in a wavelength span between about 950 nm and about 1150 nm, including a vertical cavity laser (VCL), the VCL having a gain region with at least one compressively strained quantum well containing Indium, Gallium, and Arsenic.