Abstract: A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside.

Abstract: Various embodiments of a multi-laser system are disclosed. In some embodiments, the multi-laser system includes a plurality of lasers, a plurality of laser beams, a beam positioning system, beam focusing optics, a thermally stable enclosure and a temperature controller. The thermally stable enclosure is configured to thermally and mechanically couple to a flow cell. The thermally stable enclosure substantially comprises a material with high thermal conductivity. The thermally stable enclosure can have a relatively small volume.

Abstract: A first and second semiconductor laser, which comprise buffer layers, cladding layers, quantum well active layers, and cladding layers integrated on the substrate and have a stripe geometry, are integrated on a common substrate, with the quantum well active layers in the vicinity of the cavity facets disordered by impurity diffusion. Relationships ?1>?b1, ?2>?b2, ?1>?2, and E1?E2 are satisfied, where ?1 and ?2 are defined, respectively, as the emission wavelengths of the active layers of the first and second semiconductor lasers, E1 and E2, respectively, as the forbidden band energies of the buffer layers of the first and second semiconductor lasers, and ?b1 and ?b2 respectively as the wavelengths corresponding to the forbidden band energies of the buffer layers of the first and second semiconductor lasers.

Abstract: A method for producing a multi-wavelength semiconductor laser device includes steps of: forming first and second nitride epitaxial layers in parallel on a substrate for growth of a nitride single crystal; separating the first and second nitride epitaxial layers from the substrate; attaching the separated first and second nitride epitaxial layers to a first conductivity-type substrate; selectively removing the first and second nitride semiconductor epitaxial layers to expose a portion of the first conductivity-type substrate and to form first and second semiconductor laser structures, respectively; and forming a third semiconductor laser structure on the exposed portion of the first conductivity-type substrate.

Abstract: A method for producing a multi-wavelength semiconductor laser device includes the steps of: forming a nitride epitaxial layer on a substrate for growth of a nitride single crystal; separating the nitride epitaxial layer from the substrate; attaching the separated nitride epitaxial layer to a first conductivity-type substrate; selectively removing the nitride semiconductor epitaxial layer to expose a portion of the first conductivity-type substrate and to form a first semiconductor laser structure; and sequentially forming second and third semiconductor laser structures on the exposed portion of the first conductivity-type substrate.

Abstract: A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.

Abstract: A multi-wavelength array of hybrid silicon lasers and a method of fabricating such a device. The method may include providing a silicon-on-insulator wafer; patterning waveguides in the silicon-on-insulator wafer; providing a III-V wafer comprising multiple layers; applying quantum well intermixing to obtain a plurality of regions of different bandgaps within the III-V wafer; and bonding the silicon on insulator wafer with the III-V wafer.

Abstract: A semiconductor laser device has a first light emitting portion and a second light emitting portion having a longer emission wavelength than that of the first light emitting portion. Each of the first light emitting portion and the second light emitting portion has a stripe-shaped ridge structure used for carrier injection. The ridge structure in the first light emitting portion includes a first front end region having a width Wf1 and having a length L3 from a front facet, a first rear end region having a width Wr1 and having a length L1 from a rear facet, and a first tapered region located between the first front end region and the first rear end region and having a length L2, and the relation of Wf1>Wr1 is satisfied.

Abstract: A mounting improvement for the solid state laser bars used for example to pump high power lasers is provided. Solid state laser bars are mounted in side by side relationship and combined with integrated substrate and laser output directing optical elements on a disclosed Integrated Diamond Carrier. The Integrated Diamond Carrier is preferably fabricated as an essentially freestanding base plate of diamond composition with incorporated arrays of mesa structures providing mounting for the laser bars and providing integral laser output directing optical elements such as mirrored prisms. Integrated diamond carriers according to the invention provide stable positioning, desirable thermal conductivity and consistent low temperature operation for the solid state lasers.

Abstract: To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.

Abstract: A multiwavelength laser system for opthalmological applications. The system including a first semiconductor diode laser including a first working beam of a first wavelength; and at least one second semiconductor diode laser having a second working beam of a second wavelength. The second wavelength being different from the first wavelength.

Abstract: A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

Abstract: A laser light source (10) has semiconductor lasers (1) and a waveguide tube (3) for propagating emission light from each of the semiconductor lasers (1). The semiconductor lasers are arranged on the upper end on the incident surface (31) side of the waveguide tube such that the emission light (4) from each of the semiconductor lasers enters into the waveguide tube from one end surface (31) of the waveguide tube and exits from the other end surface (32) of the waveguide tube. The structure can realize a small-sized laser light source having high output and capable of outputting emission light having uniform emission light intensity distribution.

Abstract: A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential.

Abstract: A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.

Abstract: A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to amount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside.

Abstract: The semiconductor laser device includes first and second light emitting portions each including a first cladding layer, an active layer and a second cladding layer, and each having a stripe structure. The stripe structure of the first light emitting portion has a section having a width changing along a resonator direction and includes a first front end face, and relationships of Wf1?W1; W1>W2; and (Wf1?W1)/2L1<(W1?W2)/2L2 hold wherein Wf1 is a width on the first front end face; W1 is a width in a position away from the first front end face by a distance L1; and W2 is a width in a position away from said the front end face by a distance L1+L2 (whereas L1+L2?L).

Abstract: A semiconductor laser chip is joined to an AlN sub-mount in a junction-down manner. The sub-mount is joined to a package. The AlN sub-mount is joined to a stem. The direction perpendicular to the irradiation direction of a laser beam emitted from the semiconductor laser chip is the direction of the width of the sub-mount. The thickness and the width of the AlN sub-mount are determined so that the product of the equivalent stress applied to the center of the surface of the semiconductor laser chip joined to the sub-mount and the stress in the direction of the width of the sub-mount does not exceed 70% of the maximum value of the product obtained by changing the thickness and the width of the AlN sub-mount.

Abstract: A semiconductor laser device includes a red-light-emission portion and an infrared-light-emission portion on a single substrate. The red-light-emission portion has a structure in which an AlGaInP-based active layer is sandwiched by a first cladding layer of a first conductivity type having a striped portion and a second cladding layer of a second conductivity type. The infrared-light-emission portion has a structure in which an AlGaAs-based active layer is sandwiched by a third cladding layer of the first conductivity type having a striped portion and a fourth cladding layer of the second conductivity type. The first, second, third, and fourth cladding layers are all made of an AlGaInP-based material. When in these layers, the Al:Ga contents are represented by X1:1-X1, X2:1-X2, X3:1-X3, and X4:1-X4, respectively, X1?X2 and X3?X4 are satisfied.

Abstract: Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.

Abstract: Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.

Abstract: In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element.

Abstract: In a monolithic dual-laser semiconductor laser device capable of high power output, a window structure for each of laser elements is formed through a common step, thereby improving the device reliability. The semiconductor laser device has an infrared laser element li0 and a red laser element 120 monolithically integrated on an n-type semiconductor substrate i01. Each of the infrared and red laser elements 110 and 120 has a ridged waveguide and a window structure formed by Zn diffusion at each resonator facet. The infrared and red laser elements ii0 and 120 include p-type contact layers 109 and 119 on the ridges of the respective waveguides. The p-type contact layer 109 is thinner than the p-type contact layer 119.

Abstract: An optical assembly comprises a first semiconductor optical device and a second semiconductor optical device. The first and second semiconductor optical devices may, for example, be laser diodes or light-emitting diodes. In addition, the optical assembly includes an active cooling device that is in thermal contact with the first and second semiconductor optical devices. Advantageously, the active cooling device is operative to regulate the temperatures of both the first and second semiconductor optical devices.

Abstract: A semiconductor laser device comprising: a submount having a front surface and a back surface corresponding to the opposing face that are in parallel with each other and a visible light transmittance of 60% or more; a connection electrode that is formed on the front surface; and a semiconductor laser element that is packaged on the submount through the connection electrode, and is allowed to emit a laser beam in a direction parallel to the front surface.

Abstract: An optical pickup according to the present invention includes an integrated circuit element (LDD) 5 for driving first, second, and third semiconductor lasers 3, 4, and 5. The LDD 50 is shaped so as to have a rectangular principal face surrounded by one side, with a plurality of input/output pins being arranged along each side. The plurality of input/output pins include a first pin group connected to a blue-violet laser 5 whose oscillation wavelength is the shortest, a second pin group connected to a red laser 4, and a third pin group connected to an infrared laser 3. The wiring structure of the optical pickup includes a first transmission line 41 for connecting the first pin group to the blue-violet laser 5, a second transmission line 33 for connecting the second pin group to the red laser 4, and a third transmission line 31 for connecting the third pin group to the infrared laser 3, where the first transmission line 41 is shorter than both the second and third transmission lines 31 and 33.

Abstract: There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element (10a) and an InGaAlP based semiconductor laser element (10b) formed on a semiconductor substrate (1). The AlGaAs based semiconductor laser element (10a) is composed of an infrared light emitting layer forming portion (9a), which has an n-type cladding layer (2a), an active layer (3a) and a p-type cladding layer (4a) formed so as to have a ridge portion, and a current constriction layer (5a) provided on sides of the ridge portion, while the InGaP based semiconductor laser element (10b) is composed of a red light emitting layer forming portion (9a), which has an n-type cladding layer (2b), an active layer (3b) and a p-type cladding layer (4b) formed so as to have a ridge portion, and a current constriction layer (5b) provided on sides of the ridge portion.

Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

Abstract: In one aspect of the present invention, a multiple wavelengths semiconductor laser device may include a supporting member, a first semiconductor laser element provided on a first substrate, mounted on the supporting member as face up, and configured to emit a first wavelength laser, and a second semiconductor laser element provided on a second substrate which has lower heat conductivity ratio than the first substrate, mounted on the supporting member as face down, and configured to emit a second wavelength laser toward in substantially a same direction as the first wavelength laser, and in another aspect of the invention, a multiple wavelengths semiconductor laser device may include a supporting member, a first semiconductor laser element provided on a first substrate, mounted on the supporting member as face up, and configured to emit a first wavelength laser, a second semiconductor laser element provided on a second substrate which has lower heat conductivity ratio than the first substrate, mounted on the s

Abstract: This invention provides a semiconductor laser device and method of manufacture with a small interval between light emitting points of laser lights. A first light emitting element having a semiconductor substrate and a laser oscillation section, and a second light emitting element having a laser oscillation section, are brought together with a ridged waveguide of the laser oscillation section facing the ridged waveguide of the laser oscillation section, and then bonded together by virtue of SOGs having a small thickness. A conductive wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, and a wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, are arranged to extend until the insulating layer on the semiconductor substrate. Further, the ohmic electrodes and are formed on the bottom surface of the semiconductor substrate and the top surface of the laser oscillation section, respectively.

Abstract: A light emitting device includes a substrate, at least one semiconductor light emitting device formed in or on the substrate, and upconverting material disposed in or on the substrate. The upconverting material is disposed in a path of light processed or emitted by the semiconductor device. The upconverting material absorbs light emitted by the semiconductor device and emits upconverted light in response. Integrated pixelated displays include a plurality of pixels formed on a surface of the substrate, with each pixel including up-conversion material based red light source, a blue light source a green light source, and a structure for selectively controlling emission from the red, blue and green lights sources for each of the pixels.

Abstract: A laser diode apparatus (2) having a plurality of active regions (4a . . . 4n) which are arranged side by side and are designed for radiation production when the laser diode apparatus is in operation. A lateral dimension (ba . . . bn) of the active regions is varied in the lateral direction, and/or the distance (Da . . . D1) between adjacent active regions is varied in the lateral direction. Furthermore, a laser arrangement (1) is specified, having a laser diode apparatus which is arranged on a mount (6) with the mount being matched to the laser diode apparatus. Furthermore, a laser which is optically pumped by means of the laser diode apparatus or the laser arrangement is specified.

Abstract: A surface emitting laser device is disclosed that is able to selectively add a sufficiently large loss to a high order transverse mode so as to efficiently suppress a high order transverse mode oscillation and to oscillate at high output in a single fundamental transverse mode. The surface emitting laser device includes a first resonance region that includes an active layer and spacer layers, two distributed Bragg reflectors that sandwich the resonance region, and a current confinement structure that defines a current injection region for the active layer. At least one of the distributed Bragg reflectors includes a second resonance region arranged in the current injection region excluding a predetermined region surrounding a center of the current injection region.

Abstract: A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.

Abstract: A semiconductor laser diode includes, on a substrate, a first cladding layer; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer and having a ridge stripe for injecting a current into the active layer; and a light emitting portion formed on both sides of the ridge stripe and having a current blocking layer for confining the current in the ridge stripe. A distance from a lower face of the current blocking layer to an upper face of the active layer is within a given range. Also, the current spreads beyond a width of the ridge stripe after passing the ridge stripe and before reaching the active layer.

Abstract: A semiconductor optical amplifier according to the present invention comprises a lower cladding layer of a first conductive type, an upper cladding layer of a second conductive type, an active layer, and a diffraction grating layer. The lower cladding layer includes first and second regions. The first and second regions are arranged in a predetermined direction, and the upper cladding layer is supported by the first region. The active layer is provided between the first region of the lower cladding layer and the upper cladding layer, and the diffraction grating layer has a diffraction grating. The diffraction grating extends in the predetermined direction. The diffraction grating layer is supported by the second region, and the diffraction grating layer is optically coupled to the active layer.

Abstract: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with one another.

Abstract: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with one another.

Abstract: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

Abstract: An extremely versatile diode laser assembly is provided, the assembly comprised of a plurality of diode laser subassemblies mounted to a stepped cooling block. The stepped cooling block allows the fabrication of a close packed and compact assembly in which individual diode laser subassembly output beams do not interfere with one another.

Abstract: Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the design of an optical system.

Abstract: A semiconductor laser device includes: a first light emitting device, the first light emitting device including a first first-conductive-type cladding layer, a first active layer having a first window region in the vicinity of a light emitting edge surface and a first second-conductive-type cladding layer stacked in this order on a substrate; and a second light emitting device, the second light emitting device including a second first-conductive-type cladding layer, a second active layer having a second window region in the vicinity of a light emitting edge surface and a second second-conductive-type cladding layer stacked in this order on the substrate. In the semiconductor laser device, respective lattice constants of the first second-conductive-type and second second-conductive-type cladding layers are adjusted to compensate for a difference in diffusion rate of an impurity between the first window region in the first active layer and the second window region in the second active layer.

Abstract: The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

Abstract: A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.

Abstract: A semiconductor laser diode comprises: an n-type GaAs substrate; and a first laser diode structure having a first n-type cladding layer, a first active layer including a quantum well layer, a first p-type cladding layer on the first active layer, a p-type signal layer on the first p-type cladding layer and which has the same constituent elements as those of the first p-type cladding layer, and a p-type ridge waveguide in a stripe mesa-like shape on the signal layer, which has the same constituent elements as those of the signal layer, and in which composition ratios of two constituent elements in a complementary relation of constituent elements are different from those composition ratios of the signal layer.

Abstract: An apparatus and method for optically aligning output beams from multiple, individual, different-wavelength laser diodes. The output of a first laser diode is fed directly into the high-reflector of a laser diode, through the gain medium, and is output from an output coupler in each of a sequence of abutting laser diodes. The output from the last laser diode includes the individual beams from each laser diode in the same single optical axis, while retaining the original wavelengths.

Abstract: A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second region and has the same layers as those of the first semiconductor laser diode. A second semiconductor laser diode is formed on the non-active layer. A lateral conductive region is formed at least between the first and second semiconductor laser diodes.

Abstract: A blue-violet emission point, an infrared emission point, and a red emission point in a semiconductor laser apparatus are arranged so as to be arranged in this order on a substantially straight line along a first direction. A blue-violet laser beam emitted from the blue-violet emission point and a red laser beam emitted from the red emission point are incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a ?/4 plate, an objective lens, a cylindrical lens, and an optical disk, is returned from the optical disk, and is introduced into an photodetector. The infrared laser beam emitted from the infrared emission point is incident on the optical disk by the optical system, is returned from the optical disk, and is introduced into the photodetector.

Abstract: A lightweight, compact image projection module, especially for mounting in a housing having a light-transmissive window, is operative for causing selected pixels in a raster pattern to be illuminated to produce an image of high resolution of VGA quality in color.

Abstract: An image projection system projects an image on a projection screen having a phosphor for converting incident violet light into green light which, together with red and blue light, creates the image in full color. The screen includes an apertured mask having apertures filled with the phosphor, or a phosphor plate in contact with the mask and having lenslets extending through and past the apertures.