Semiconductor Patents (Class 372/75)
  • Publication number: 20040202222
    Abstract: The solid-state laser gyro of the invention comprises a solid-state resonator block, in which an optical path followed by two counterrotating waves generated by an optical-gain laser medium is defined, and, according to an important characteristic, the gain medium is attached to the resonator and is made of a rare-earth-doped crystal.
    Type: Application
    Filed: November 26, 2003
    Publication date: October 14, 2004
    Inventors: Jean Paul Pocholle, Pierre Gallon, Jacques Leclerc, Herve Girault
  • Patent number: 6803605
    Abstract: The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.
    Type: Grant
    Filed: August 15, 2002
    Date of Patent: October 12, 2004
    Assignee: Comlase AB
    Inventors: L. Karsten V. Lindstrom, N. Peter Blixt, Svante H. Soderholm, Lauerant Krummenacher, Christofer Silvenius, Anand Srinivasan, Carl-Fredrik Carlstrom
  • Publication number: 20040196883
    Abstract: Disclosed herein is a diode-pumped solid state (DPSS) laser having a laser rod and a diode array, located proximate the laser rod. In one embodiment, the diode array includes a plurality of high power diode bars spaced along the diode array, where each is configured to emit radiation therefrom. In addition, in this embodiment, the spacing of the high power diode bars and the location of the diode array with respect to the laser rod are selected to allow the laser rod to receive the radiation from the high power diode bars in a substantially uniform distribution. In addition, a method of manufacturing a DPSS laser, and a DPSS laser assembly are also disclosed.
    Type: Application
    Filed: April 2, 2004
    Publication date: October 7, 2004
    Applicant: JMAR Research Inc.
    Inventor: Harry Rieger
  • Patent number: 6798804
    Abstract: A laser apparatus includes a semiconductor laser element, a surface-emitting semiconductor element including a first mirror, a second mirror, and a modulation unit. The semiconductor laser element emits first laser light having a first wavelength. The surface-emitting semiconductor element is excited with the first laser light, emits second laser light having a second wavelength which is longer than the first wavelength. The first mirror in the surface-emitting semiconductor element is arranged on one side of the first active layer. The second mirror is arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator in which the second laser light resonates. The modulation unit modulates the surface-emitting semiconductor element.
    Type: Grant
    Filed: February 9, 2001
    Date of Patent: September 28, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventor: Toshiro Hayakawa
  • Publication number: 20040184505
    Abstract: A diode-pumped microlaser in accordance with the present invention includes a diode pump, a first lens, a second lens and a laser glass. The diode pump generates an input pump beam. The first lens and second lens manipulate the pump beam by collimating the pump beam in focal planes that are perpendicular to each other. The laser glass receives the manipulated pump beam from the second lens and converts the pump beam into a laser beam. The laser glass is further doped with predetermined amounts by weight of Erbium and Ytterbium to ensure that an output laser beam with an eyesafe wavelength is generated. The microlaser further includes a passive Q-switch made of a Cobalt-spinel material, which receives the output laser beam and generates laser pulses using passive switching techniques, independent of any external temperature control. This configuration allows the microlaser to function as a laser rangefinder over extended temperature ranges in a manner that is eyesafe to the user.
    Type: Application
    Filed: March 18, 2003
    Publication date: September 23, 2004
    Inventors: C. Ward Trussell, Vernon King
  • Patent number: 6795475
    Abstract: A semiconductor-laser-excited solid-state laser apparatus includes a solid-state laser element and a semiconductor laser unit including a resonator. The solid-state laser element is excited by light emitted from the semiconductor laser unit, and emits laser light. The resonator length in the semiconductor laser unit is arranged to be at least 0.8 mm, so as to reduce an amount of wavelength shift in light emitted from the semiconductor laser unit, and achieve a stable, high-power laser output from the semiconductor-laser-excited solid-state laser apparatus.
    Type: Grant
    Filed: April 19, 2000
    Date of Patent: September 21, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Hisashi Ohtsuka, Yoji Okazaki
  • Patent number: 6795477
    Abstract: A method for modulating the output of an optically pumped, tunable VCSEL. Two approaches are disclosed. In a first approach, the output of the VCSEL is modulated by modulating the pump laser. In a second approach, the output of the VCSEL is modulated by modulating a voltage applied across the active region.
    Type: Grant
    Filed: August 11, 2000
    Date of Patent: September 21, 2004
    Assignee: Cortek Inc.
    Inventors: Daryoosh Vakhshoori, Parviz Tayebati
  • Publication number: 20040170206
    Abstract: An optically pumped laser has a gain medium positioned inside of an optical resonator cavity and disposed about a resonator optical axis. An optical pumping source is positioned outside of the optical resonator cavity. A reflective coupler with a coupler body, and an interior volume passing therethrough is positioned proximal to the optical pumping source. Light from the pumping source passes into an entrance aperture of the reflective coupler to an exit aperture of the reflective coupler positioned distal to the optical pumping source. The interior volume of the reflective coupler is bounded by a reflective surface, an entrance aperture and the exit aperture, and is substantially transparent to radiation from the optical pumping source. The reflective surface has a high reflectivity matched to radiation from the optical pumping source.
    Type: Application
    Filed: December 16, 2003
    Publication date: September 2, 2004
    Inventors: Jason D. Henrie, William L. Nighan
  • Patent number: 6782028
    Abstract: A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.
    Type: Grant
    Filed: December 17, 2001
    Date of Patent: August 24, 2004
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Naoki Tsukiji, Junji Yoshida, Masaki Funabashi, Toshio Kimura, Takeshi Aikiyo, Takeo Shimizu, Toshiro Yamamoto, Tomoaki Toratani, Hiroshi Matsuura, Mieko Konishi, Masashi Nakae
  • Publication number: 20040146076
    Abstract: A diode end-pumped solid state laser is provided which produces improved power output, long term stability and improved conversion efficiency from the pumping power, high as well as low power operation while maintaining certain desirable common characteristics such as TEM00 operation, circular outputs, readily aligned systems and compatibility with long lifetime for all components. The invention intracavity conversion to second, third and higher harmonics in several different spectral regimes. The invention also addresses the aspects of design flexibility, seeking in certain embodiments to provide a single platform for providing several harmonic beams.
    Type: Application
    Filed: January 24, 2003
    Publication date: July 29, 2004
    Inventors: David R. Dudley, Norman Hodgson, Hanna J. Hoffman, Oliver Mehl
  • Patent number: 6768756
    Abstract: An optical membrane device and method for making such a device are described. This membrane is notable in that it comprises an optically curved surface. In some embodiments, this curved optical surface is optically concave and coated, for example, with a highly reflecting (HR) coating to create a curved mirror. In other embodiments, the optical surface is optically convex and coated with, preferably, an antireflective (AR) coating to function as a refractive or diffractive lens.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: July 27, 2004
    Assignee: Axsun Technologies, Inc.
    Inventors: Dale C. Flanders, Steven F. Nagle, Margaret B. Stern
  • Patent number: 6764183
    Abstract: Disclosed herein is a color laser display that comprises a red laser light source for emitting red laser light, a green laser light source for emitting green laser light, and a blue laser light source for emitting blue laser light. An excitation solid laser unit (which has a solid-state laser crystal doped with Pr3+ and a GaN semiconductor laser element for exciting the solid-state laser crystal), a fiber laser unit (which has a fiber with a Pr3+-doped core and a GaN semiconductor laser element for exciting the fiber), or a semiconductor laser unit (which has a semiconductor laser element, employing a GaN semiconductor, and a surface-emitting semiconductor element), is employed as at least one of the red laser light source, the green laser light source, or the blue laser light source.
    Type: Grant
    Filed: March 14, 2001
    Date of Patent: July 20, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventor: Yoji Okazaki
  • Publication number: 20040136431
    Abstract: Disclosed is a side pumping type DPSS (Diode Pumped Solid-State) laser having a high efficiency of pumping light together with a large output of the laser power. The DPSS laser includes a first laser chip for generating a pumping light, a second laser chip provided at a predetermined degree to be slightly slanted, although being parallel with the first laser chip, so as to avoid a contact with the pumping light, a first and second focusing lens for focusing the pumping lights, and a side pumping medium for forming the focused pumping lights in a beam mode so as to output as a lasing light.
    Type: Application
    Filed: January 5, 2004
    Publication date: July 15, 2004
    Applicant: LG Electronics Inc.
    Inventor: Kee Tao Um
  • Publication number: 20040136432
    Abstract: A solid-state laser rod pumping module comprises a stack-type semiconductor laser including a plurality of bar-shaped (or rectangular) components that are stacked in a direction parallel to the axis of a solid-state laser rod, each of the plurality of bar-shaped components including a plurality of laser-light-emitting portions that are aligned and integrated in a direction orthogonal to the axis of the solid-state laser rod. The stack-type semiconductor laser has a large divergence angle in a longitudinal parallel to the axis of the solid-state laser rod.
    Type: Application
    Filed: January 7, 2004
    Publication date: July 15, 2004
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshihito Hirano, Shuhei Yamamoto, Yasuharu Koyata, Nicolaie Pavel
  • Patent number: 6763050
    Abstract: A thin, planar laser material is bonded to a light guide of an index-matched material forming a composite disk. Diode array or other pump light is introduced into the composite disk through the edges of the disk. Pump light trapped within the composite disk depletes as it multi-passes the laser medium before reaching an opposing edge of the disk. The resulting compound optical structure efficiently delivers concentrated pump light and to a laser medium of minimum thickness. The external face of the laser medium is used for cooling. A high performance cooler attached to the external face of the laser medium rejects heat. Laser beam extraction is parallel to the heat flux to minimize optical distortions.
    Type: Grant
    Filed: January 26, 2001
    Date of Patent: July 13, 2004
    Assignee: The Regents of the University of California
    Inventors: Luis E. Zapata, Raymond J. Beach, Eric C. Honea, Stephen A. Payne
  • Patent number: 6757310
    Abstract: A diode pump, solid state laser deep UV laser source is described for customized ablation in photo-refractive surgery. The solid-state deep UV laser source is tailored to have a pulse repetition rate of about 1 kHz and a relatively small spot size at both positions of the cornea and the scanner. Such a deep UV laser source enables the use of fast scanner and the implement of fast eye tracker. One embodiment of such a deep UV laser source comprises a passively Q-switched microchip laser, a diode-pumped multiple pass amplifier, and a wavelength converter.
    Type: Grant
    Filed: January 16, 2002
    Date of Patent: June 29, 2004
    Inventor: Ming Lai
  • Patent number: 6751241
    Abstract: An optically active waveguide laser (30) includes a multimode portion (126) for carrying more than one spatial mode at a predetermined wavelength chosen from a bandwidth including a pump wavelength (64) and the lasing wavelength (66). The multimode portion (126) has a first refractive index. A cladding portion (386) is proximate the multimode portion (126). A multimode grating (60, 56, or 62) is written on at least one section (26) of the multimode portion for reflecting the predetermined wavelength.
    Type: Grant
    Filed: September 27, 2001
    Date of Patent: June 15, 2004
    Assignee: Corning Incorporated
    Inventors: Monica K. Davis, Matthew J. Dejneka, John D. Minelly, Luis A. Zenteno
  • Patent number: 6744792
    Abstract: Apparatus and method for stabilizing the wavelength of a tunable laser to a target wavelength, by correspondingly adjusting the electrooptical performance of the laser's gain medium, whereby to eliminate the frequency shift due to vibrational factors. The electrooptical performance of the laser's gain medium is adjusted, in the case of an electrically pumped laser, by changing the injection current used to pump the laser; and the electrical performance of the laser's gain medium is adjusted, in the case of an optically pumped laser, by changing the intensity of the pump laser used to energize the laser. The system is implemented with a feedback mechanism.
    Type: Grant
    Filed: October 26, 2000
    Date of Patent: June 1, 2004
    Assignee: Nortel Networks, Ltd.
    Inventor: Parviz Tayebati
  • Publication number: 20040101004
    Abstract: A conventional method for a solid-state laser device that obtains a laser beam output of a high quality at a high output using a laser diode as a pumping light source has a problem that the costs are increased and the fabrication becomes complicated due to an increasing number of components, such as a diffusing reflection mirror, a condenser lens, and a holding mechanism and a cooling mechanism thereof. Coating with a antireflection coating to reduce a transmission loss of laser diode light, and coating with a high reflection coating to reflect the laser diode light are provided alternately on the outer surface of a cooling tube. Also, an irradiation direction of the laser diode is not directed to the center of the laser rod, but is given with a certain angle to be positively tilted. This configuration makes it possible to eliminate the above problem.
    Type: Application
    Filed: November 19, 2003
    Publication date: May 27, 2004
    Inventors: Katsuji Mukaihara, Masaki Tsunekane
  • Patent number: 6741619
    Abstract: Systems and methods for enhancing the stability of a mode-locked laser's output are disclosed. The laser systems include a mode-locking element that mode-locks the laser's output, and a semiconductor element. The semiconductor element produces a loss at the laser's operative wavelength that increases as pulse energy increases, thereby enhancing the stability of the mode-locked output. The semiconductor elements can be used to enhance stability of both passively and actively mode-locked laser systems.
    Type: Grant
    Filed: April 3, 2000
    Date of Patent: May 25, 2004
    Assignee: Massachusetts Institute of Technology
    Inventors: Erik R. Thoen, Elisabeth M. Koontz, Erich P. Ippen, Leslie A. Kolodziejski, Franz X. Kaertner, Hermann A. Haus, Matthew E. Grein
  • Patent number: 6738404
    Abstract: A method of controlling a unipolar semiconductor laser in the 4-12 &mgr;m mid-infrared range. This is an optical control method, unlike a purely electrical, power control method which injects a relatively large flux of electrons. The optical control method may advantageously include two optical beams of the same wavelength and a device for making those beams interfere in the active layer of the laser, the optical control beams having a much shorter wavelength than the wavelength of the unipolar laser and having a frequency capable of being modulated more rapidly than that of the laser.
    Type: Grant
    Filed: June 13, 2000
    Date of Patent: May 18, 2004
    Assignee: Thomson-CSF
    Inventors: Vincent Berger, Carlo Sirtori
  • Patent number: 6738407
    Abstract: A solid-state laser rod pumping module has a stack-type semiconductor laser including a plurality of bar-shaped components that are stacked in a direction parallel to the axis of a solid-state laser rod. Each bar-shaped component includes a plurality of laser-light-emitting portions that are aligned and integrated in a direction orthogonal to the axis of the solid-state laser rod. The large divergence angle of the stack-type semiconductor can be compensated by including a light focusing component for focusing laser light emitted out of the stack-type semiconductor laser. The focused light is guided by a laser light guiding component disposed in a diffusive reflection tube. A light guiding component guides the focused light onto a solid-state laser rod located within the diffusive reflective tube, while maintaining the length of one side of the cross section of the guided light.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: May 18, 2004
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshihito Hirano, Shuhei Yamamoto, Yasuharu Koyata, Nicolaie Pavel
  • Patent number: 6735234
    Abstract: A passively mode-locked optically pumped semiconductor vertical-external-cavity surface-emitting laser (OPS-EXSEL) is disclosed. The laser is mode locked by a semiconductor saturable absorber mirror (SESAM) which forms part of an external cavity. Both the beam-quality limitations of edge-emitting lasers, and the power restrictions of electrically pumped surface-emitting lasers are overcome. The laser uses a semiconductor wafer in which a stack of quantum wells is grown adjacent to a single Bragg-mirror structure. Light from one or more multi-mode high-power diode lasers is focused onto the face of the wafer and pumps the wells by absorption in the barrier regions. The area of the laser mode on the active mirror can be about 104 times larger than the mode area on the facet of an edge-emitting laser, offering scope for the generation of high average power and large pulse energy. At the same time the external cavity enforces fundamental mode operation in a circular, near-diffraction-limited beam.
    Type: Grant
    Filed: February 11, 2000
    Date of Patent: May 11, 2004
    Assignee: Giga Tera AG
    Inventors: Ruediger Paschotta, Reto Haering, Ursula Keller
  • Patent number: 6731665
    Abstract: A pump laser capable of delivering at least a specified amount of output power is described. The pump laser has an array of N semiconductor lasers each having a first wavelength and an individual available output power (P) such that the product of N times P is equal to or greater than the specified amount of output power. The pump laser also has a coupler configured to couple light emitted by the individual lasers in the array to an individual optical fiber.
    Type: Grant
    Filed: June 26, 2002
    Date of Patent: May 4, 2004
    Assignee: Xanoptix Inc.
    Inventor: John Trezza
  • Patent number: 6721347
    Abstract: Laser light emitted from an LD apparatus is concentrated and applied onto a laser light path region A of a slab-shaped YAG crystal 21 and the neighborhood thereof with the use of a concave lens and a pair of reflecting mirrors, a duct lens, or a plurality of cylindrical lenses, whereby a concentrated applied light intensity distribution in the side surface width direction (y-axis direction) of the slab-shaped YAG crystal is formed as a double-peak distribution having maximum values P1 and P2 at opposite end portions A1 and A2 of the laser light path region of the slab-shaped YAG crystal or in the neighborhoods thereof.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: April 13, 2004
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Jyunichi Mizui, Susumu Miki, Masahiro Kato, Takashi Akaba
  • Patent number: 6721346
    Abstract: A solid state laser excited by a semiconductor laser can generate a stable and highly efficient high power laser beam. The laser apparatus includes a solid state laser element containing an active medium, a semiconductor laser for optically exciting the solid state laser element, a power supply for supplying pulses of current having magnitudes that change with time during each pulse to the semiconductor laser, and an optical resonator for emission of a laser beam from the solid state laser element. When the semiconductor laser is driven with the pulses that change in magnitude during each pulse, it produces pulsed excitation light that excites the solid state laser element. A stable laser beam is produced because changes in thermally sensitive light-generating parameters of the semiconductor laser are compensated.
    Type: Grant
    Filed: June 20, 2001
    Date of Patent: April 13, 2004
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoko Inoue, Shuichi Fujikawa, Keisuke Furuta
  • Publication number: 20040066826
    Abstract: According to the invention, a device for emission of light is made comprising an emitting structure (22) comprising an active part (4), and a micro-cavity, delimited by mirrors (14, 20). and containing the active part, and a laser diode (26) designed for pumping the emitting structure. The emitting structure is fixed to the laser diode. The invention is particularly applicable to the detection of gas.
    Type: Application
    Filed: August 11, 2003
    Publication date: April 8, 2004
    Inventor: Emmanuel Picard
  • Patent number: 6714574
    Abstract: The invention features an edge-emitting semiconductor signal laser having an active region to produce laser light. There is provided a semiconductor pump laser monolithically integrated with the edge-emitting signal laser. The pump laser includes a photon emissive active region to provide photopumping of the active region of the edge-emitting signal laser, thereby providing optical excitation of the active region of the signal laser.
    Type: Grant
    Filed: November 16, 2001
    Date of Patent: March 30, 2004
    Assignee: Bookham Technology, PLC
    Inventors: Richard D. Clayton, Benoit Reid
  • Publication number: 20040052286
    Abstract: A semiconductor laser device, comprising a semiconductor laser array for excitation having a plurality of semiconductor laser elements, and an optical resonator having a solid-state laser medium with a reflection mirror formed on one end surface and an output mirror provided in parallel to the reflection mirror, wherein laser beams emitted from the plurality of the semiconductor laser elements enter the optical resonator independently from each other, and the laser beams are respectively amplified and are projected by the optical resonator.
    Type: Application
    Filed: September 12, 2003
    Publication date: March 18, 2004
    Inventor: Masayuki Momiuchi
  • Publication number: 20040052285
    Abstract: A solid-state laser apparatus includes a cavity 17 for storing a laser diode 40 and a laser medium 6 to be excited by the laser diode 40, and a storage unit 70, for communicating with the cavity 17 and for internally storing a drying agent 71. A moisture permeable film 72 is formed at openings 73 whereat the cavity 17 and the storage unit 70 communicate with each other.
    Type: Application
    Filed: October 7, 2003
    Publication date: March 18, 2004
    Inventors: Kenichi Matsui, Akihiro Otani
  • Patent number: 6704341
    Abstract: A laser wherein pump radiation from laser diodes is delivered to a pump chamber and into the lasing medium by quasi-three-dimensional compound parabolic concentrator light channels. The light channels have reflective side walls with a curved surface and reflective end walls with a curved surface. A flow tube between the lasing medium and the light channel has a roughened surface.
    Type: Grant
    Filed: September 8, 2000
    Date of Patent: March 9, 2004
    Assignee: The Regents of the University of California
    Inventor: Jim J. Chang
  • Publication number: 20040042524
    Abstract: An optical system has a high power diode pump source and a thin disk gain media. An optical coupler is positioned between the diode pump source and the thin disk gain media. The optical coupler produces a beam with a large numerical aperture incident on the thin disk gain media.
    Type: Application
    Filed: August 30, 2002
    Publication date: March 4, 2004
    Inventors: James D. Kafka, Dirk Sutter
  • Patent number: 6700913
    Abstract: A semiconductor laser diode array including a plurality of laser diode bars, each carried by a submount and forming a subassembly. Each subassembly is separated by a flexible or compliant electrically conductive spacer. All connections within the array are by way of a non-fluxed solder, that may be hard and/or soft, reflowed in a non-oxidizing atmosphere in a simple mechanical stack fixture to create nearly void-free solder joints with relatively high thermal integrity and electrical conductivity. Flexible electrically conductive spacers are disposed between the subassemblies to eliminate tensile stress on the laser diode bars while providing electrical conductivity between subassemblies. The subassemblies are carried by a thermally conductive dielectric substrate, allowing waste heat generated from the bars to be conducted to a cooling device. The invention eliminates known failure modes in interconnections, minimizing tensile strength on the diode arrays, and increasing the useful life of the array.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: March 2, 2004
    Assignee: Northrop Grumman Corporation
    Inventors: George G. Pinneo, Marijan D. Grgas, Kriss A. Bennett
  • Patent number: 6693942
    Abstract: In the basic Diode-Pumped Alkali Laser (DPAL) device, excitation to the n 2P3/2 electronic level by a single diode laser pump source leads to a population inversion between the first excited electronic 2P1/2 level and the ground 2S1/2 level, permitting the construction of efficient, high-power, compact DPAL laser oscillators in the near infrared spectral region. The present invention extends the single-step excitation DPAL to a two-step excitation, or up-conversion DPAL to produce efficient, powerful laser operation in the visible blue and near UV spectral regions (viz., in the range 460-323 nm). The present invention describes an apparatus and method that efficiently sums the energy of two, near-infrared diode pump photons in alkali vapor atoms, followed by stimulated emission to their electronic ground levels.
    Type: Grant
    Filed: December 17, 2001
    Date of Patent: February 17, 2004
    Inventor: William F. Krupke
  • Patent number: 6693943
    Abstract: A first injection laser signal and a first part of a reference laser beam are injected into a first laser element. At least one additional injection laser signal and at least one additional part of a reference laser beam are injected into at least one additional laser element. The first part of a reference laser beam and the at least one additional part of a reference laser beam are amplified and phase conjugated producing a first amplified output laser beam emanating from the first laser element and an additional amplified output laser beam emanating from the at least one additional laser element. The first amplified output laser beam and the additional amplified output laser beam are combined into a powerful laser beam.
    Type: Grant
    Filed: October 4, 2002
    Date of Patent: February 17, 2004
    Assignee: The Regents of the University of California
    Inventors: John F. Holzrichter, Anthony J. Ruggiero
  • Patent number: 6693927
    Abstract: The invention is directed to an apparatus and method for oscillator start-up control, and more particularly to an apparatus and method for overdriving a laser to obtain mode-lock operation. The oscillator with start-up control has a lasing medium mounted on a base. A laser pumping source is mounted on the base for inducing a laser beam from the lasing medium. A mode-lock detection device is mounted about the base. An overdrive circuit is coupled with the mode-lock detection and signal processing device for determining mode-lock status of the oscillator. The overdrive circuit overdrives the pump source when the oscillator is not in mode-lock status.
    Type: Grant
    Filed: September 13, 2002
    Date of Patent: February 17, 2004
    Assignee: IntraLase Corp.
    Inventors: Christopher Horvath, Ruben Zadoyan
  • Patent number: 6693941
    Abstract: A semiconductor laser apparatus comprises a pumping beam source and a surface emission type of semiconductor device. The pumping beam source is constituted of a semiconductor laser device, in which a composition selected from the group consisting of InGaN and GaN is employed in an active layer. The surface emission type of semiconductor device comprises a substrate, and an active layer, which is constituted of a composition selected from the group consisting of InGaAlP and InGaP and is provided on the substrate. The surface emission type of semiconductor device is pumped by the pumping beam source to produce a laser beam. The semiconductor laser apparatus produces the laser beam having a wavelength of a red region or an ultraviolet region and undergoes oscillation in a fundamental mode with a high reliability and a high efficiency and up to a high output power.
    Type: Grant
    Filed: September 7, 2000
    Date of Patent: February 17, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Yoji Okazaki, Toshiaki Fukunaga
  • Publication number: 20040028108
    Abstract: A solid-state laser system includes a solid state oscillator for generating a laser beam and a multiple stage amplifier for increasing an energy of the beam. The oscillator includes an elongated housing having an elongated cavity defined therein, a solid state rod disposed within the cavity, a pumping source for exciting laser active species within the rod, and a resonator including the rod disposed therein for generating a laser beam. The multiple-stage amplifier preferably includes an even number of stages. One or more pairs of compensating stages may be mutually rotated about the beam axis by substantially 90°, with each pumping direction parallel to the polarization direction of the beam. A first stage may be side-pumped by a pumping radiation source in a direction substantially parallel to a polarization direction of the beam generated by the oscillator resonator.
    Type: Application
    Filed: February 6, 2003
    Publication date: February 12, 2004
    Inventors: Sergei V. Govorkov, Alexander Oliver Wolfgang Wiessner
  • Publication number: 20040022295
    Abstract: This device comprises at least three pulsed lasers (2, 4, 6), in order to supply light pulses, and means (14) for directing these pulses substantially onto the same spot of a target (16) and substantially at the same time onto this spot. The lasers are pumped by diodes (40) operating continuously.
    Type: Application
    Filed: March 20, 2003
    Publication date: February 5, 2004
    Inventors: Jean-Mar Weulersse, Vincent Le Flanchec, Michel Gilbert
  • Patent number: 6687280
    Abstract: This invention provides a vertical-cavity surface-emitting laser device comprising a surface light-emitting part comprising a cavity consisting of two multilayer reflectors and an active region between them and a waveguide part for introducing induced light into the surface light-emitting part. The device is substantially independent of a temperature and allows a wavelength to be controlled after manufacturing the device.
    Type: Grant
    Filed: December 21, 1998
    Date of Patent: February 3, 2004
    Assignee: NEC Corporation
    Inventor: Mikihiro Kajita
  • Patent number: 6683900
    Abstract: A cavity has a longitudinal hollow having opposite open ends. An excitation source, such as a YAG rod, is accommodated in the hollow of the cavity. A hollow, cylindrical rod holder is inserted into each of the opposite open ends of the hollow and is fitted over a corresponding end of the YAG rod. A seal is fitted into a hollow of the rod holder adjacent to a portion of the rod holder fitted over the end of the YAG rod. The seal includes an annular seal body with a U-shaped section, e.g. made from Teflon®, and fitted over an outer periphery of the YAG rod to grip the YAG rod, as well as a spring fitted in a groove of the seal body provided by the U-shaped section so as to circumferentially surround a gripped portion of the YAG rod.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: January 27, 2004
    Assignees: Ishikawajima-Harima Jukogyo Kabushiki Kaisha, IHI Scube Co., Ltd.
    Inventors: Yoshihisa Yamanouchi, Fumio Matsuzaka, Akihiro Nishimi, Minoru Uehara, Shinya Nakajima, Koichi Mori
  • Publication number: 20040013152
    Abstract: An optical semiconductor module having a large endothermic amount of an electronic cooling element can be provided, even if the area of the bottom plate of a package is the same. A package 11 includes two or more units of electronic cooling element 16 mounted therein. Each unit of the electronic cooling element is inserted through the space between inner juts 14a of ceramic feedthrough of the package 11 and a bottom plate 13, and is fixed to the bottom plate. The plural units of electronic cooling element are connected in series by one or more copper piece. The total area of junction between the two or more units of electronic cooling element and the bottom plate area of the package 11 occupies 75% or more of the area of the bottom plate. Thus, the ratio of the area of junction between the bottom plate and the electronic cooling element as a whole to the area of the bottom plate of the package can be increased.
    Type: Application
    Filed: March 26, 2003
    Publication date: January 22, 2004
    Inventors: Nobuyoshi Tatoh, Daisuke Takagi, Shinya Nishina
  • Patent number: 6680800
    Abstract: A device is proposed to symmetrize the radiation from one or from several linear optical emitters. The device possesses per emitter 1, 1a, 1b a cylindrical lens optical unit 2, 2a, 2b with one or more cylindrical lenses, which collimate each light beam in the y-direction, where by rotating at least one of the cylindrical lenses around the z-axis or by providing a discontinuous diffracting element, each light beam is diffracted at a different diffraction angle in the y-direction. The device additionally contains a director-collimator optical unit 3, which collimates each light beam in the x-direction and diffracts at different diffraction angles so that the main beams of the individual light beams in the x-direction converge at a specified distance from the emitter and run parallel in the y-direction. Finally, the device has a redirecting optical unit 4 which compensates for the diffraction of the light beam in the x-direction caused by the director-collimator optical unit 3.
    Type: Grant
    Filed: January 30, 2001
    Date of Patent: January 20, 2004
    Assignee: unique-m.o.d.e. AG
    Inventors: Peter Schreiber, Thilo Von Freyhold
  • Patent number: 6680958
    Abstract: A semiconductor laser capable of emitting a plurality of laser light having different oscillation wavelengths which is formed with dielectric films having little fluctuation in reflectance at ends of a plurality of active layers and a method of production of the same, said semiconductor laser having a plurality of active layers having different compositions on a substrate and emitting in parallel a plurality of laser light having different oscillation wavelengths, wherein a front dielectric film having a predetermined thickness by which a reflectance with respect to light of a predetermined wavelength of an arithmetical mean of oscillation wavelengths becomes the extremal value is formed on an end of the laser emission side, while rear dielectric films having higher reflectances compared with the front dielectric film and having predetermined thicknesses by which reflectances with respect to light having a predetermined wavelength become the extremal values are formed on the end of the rear side, and a method
    Type: Grant
    Filed: September 7, 2000
    Date of Patent: January 20, 2004
    Assignee: Sony Corporation
    Inventor: Kazuhiko Nemoto
  • Patent number: 6680956
    Abstract: Methods and devices are provided for converting a fundamental wavelength of a fundamental beam generated by a surface-emitting diode laser having a first resonating cavity. According to some embodiments, a first nonlinear crystal disposed in a second resonating cavity external to first resonating cavity converts the fundamental beam to a first output beam having a first output wavelength different from the fundamental wavelength. Some embodiments include a second nonlinear crystal, which may be disposed in the second resonating cavity or in a third resonating cavity, for producing a second output beam having a second output wavelength different from the first output wavelength. In some such embodiments, the second nonlinear crystal converts the wavelength of the first output beam to produce the second output beam. In some embodiments, the second nonlinear crystal interacts with the first output beam and an infrared beam from another laser device to produce the second output beam.
    Type: Grant
    Filed: February 13, 2002
    Date of Patent: January 20, 2004
    Assignee: Aculight Corporation
    Inventors: David C. Gerstenberger, Mark S. Bowers
  • Patent number: 6678303
    Abstract: A semiconductor laser device constituted by a stack of semiconductor layers formed on a substrate. The semiconductor layers include a first cladding layer of a first conductive type, an electric-to-optical conversion layer, and a second cladding layer of a second conductive type, formed in this order. In the semiconductor laser device, resonator surfaces are formed at opposite ends of the stack, and the end facet of the electric-to-optical conversion layer at each of at least one of the opposite ends of the stack protrudes outward from the shortest current path between the end facets of the first cladding layer and the second cladding layer at the end of the stack through semiconductor layers located between the first cladding layer and the second cladding layer.
    Type: Grant
    Filed: June 20, 2002
    Date of Patent: January 13, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventor: Fusao Yamanaka
  • Patent number: 6671304
    Abstract: The present invention has applications in high-bandwidth communications systems and other applications that utilize modulated optical energy. In one aspect of the invention, a short cavity diode-pumped laser generates optical energy that may be modulated over a wide range of frequencies. In one embodiment, the short cavity diode-pumped laser may be modulated at rates up to 15 GHz. The short cavity diode-pumped laser may include a laser diode modulator and a laser coupled to the laser diode modulator having a cavity lifetime of less than about 100 picoseconds.
    Type: Grant
    Filed: August 28, 2001
    Date of Patent: December 30, 2003
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Richard Scheps
  • Patent number: 6666590
    Abstract: A system for coupling light emitted from a plurality of laser diodes to a single optical fiber provides increased pump light brightness to the optical fiber to provide increased power fiber amplifiers. The system takes advantage of the brightness mismatch in the fast and slow planes of a laser diode to allow capture of more than one diode's power into a single multimode pump fiber. A first cylindrical lens is disposed to collimate light from the fast planes of the diodes. A second cylindrical lens is disposed orthogonal to the optical axis and perpendicular to the first cylindrical lens and images light from the diodes in the slow plane. A collection lens is provided to image the light from the slow plane as well as collect light from the fast plane and directs light from multiple diodes into a single multimode optical fiber.
    Type: Grant
    Filed: December 14, 2000
    Date of Patent: December 23, 2003
    Assignee: Northrop Grumman Corporation
    Inventor: Stephen J. Brosnan
  • Patent number: 6665329
    Abstract: A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS2, MoSe2, WS2, and WSe2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.
    Type: Grant
    Filed: June 6, 2002
    Date of Patent: December 16, 2003
    Assignee: Sandia Corporation
    Inventors: Mary H. Crawford, Jeffrey S. Nelson
  • Patent number: 6661827
    Abstract: A pumping module for use in a solid state laser comprises an annular array of laser diode segments (10) forming a passage (24), each segment (10) comprising an extended body supporting a laser diode array (17) that extends along the longitudinal axis of the segment (10) for directing light into the passage (24) from an inner face (12) of the annular array, wherein adjacent side faces of any two segments (10) in the annular array are in sealing engagement. The inner faces (12) of the array of segments (10) form a continuous surface so that coolant can flow between a laser rod and the segments (10) to reduce localized heating.
    Type: Grant
    Filed: July 15, 2002
    Date of Patent: December 9, 2003
    Assignee: Nanyang Technological University
    Inventors: Yee Loy Lam, Yuen Chuen Chan, Siu Chung Tam