Abstract: A laser oscillator comprises a laser medium, an optical excitation laser diode that irradiates the laser medium with light, a polarizer disposed on an optical path of the laser medium at a first end thereof, a first Porro prism disposed with the optical path coinciding with a point on a ridgeline thereof and with the ridgeline parallel or perpendicular to a plane of incidence of the polarizer, and a second Porro prism disposed on the optical path of the laser medium at a second end thereof with the optical path coinciding with a point on a ridgeline thereof. An angle formed by the two ridgelines of the first and second Porro prisms is a predetermined angle other than 0 degrees, 90 degrees, 60 degrees, 45 degrees and 36 degrees, 30 degrees.

Abstract: Parasitic oscillations are eliminated in solid-state laser components by applying a pattern of grooves to the peripheral sections that do not transmit the desired laser radiation. Additionally, the invention frustrates total internal reflections at polished peripheral component walls by providing a pattern of roughened surface sections in between polished sections. The roughened surfaces may be only microns deep or may be as deep as a few centimeters for large components. The grooves should be sufficiently deep as to inhibit any total internal reflections. The invention applies to all common solid-state architectures that are designed with polished surfaces that do not serve to propagate the desired laser radiation. Examples are slabs, plates, laser rods, waveguides and disks functioning as laser oscillators or amplifiers. The invention is operational with conventional crystal or glass laser hosts or with hosts that are composites of same, similar or dissimilar crystals or glasses.

Abstract: According to the invention, a high power diode pumped solid state laser is provided. The laser includes a first and second reflective surfaces which form an optical resonator cavity. A laser medium, particularly a Nd doped laser medium for example: a Nd:YAG, a Nd:YLF, or a Nd:YVO4 crystal is provided within the laser cavity. A fundamental frequency laser beam propagates from the front and back ends of the laser medium. The first reflective surface is highly reflective for fundamental beam. The second reflective surface is at least partially reflective for fundamental beam. The laser medium is end pumped by at least one diode pumping apparatus for example, a laser diode, or diode array, or fiber coupled laser diodes, whose wavelength matches at least one laser medium absorption band. The diode pumping apparatus is located adjacent either the front end or the back end of the laser medium, or both. The optical resonator cavity is configured to provide a laser beam diameter in the laser medium from about 0.

Abstract: Heating at the end face while operating in a high output is prevented and reliability improves in a semiconductor laser device. On an n-GaAs substrate, laminated are n-Alz1Ga1-z1As lower cladding layer, an n- or i-In0.49Ga0.51P lower optical waveguide layer, an Inx3Ga1-x3As1-y3Py3 quantum well active layer, a p- or i-In0.49Ga0.51P upper first optical waveguide layer, a GaAs cap layer and SiO2 film. Then a width of about 20 &mgr;m of the SiO2 film is removed inwardly from the cleaved surface. Using the SiO2 film as a mask, the cap layer near the end face and the upper first optical waveguide layer are removed. Then the SiO2 film, the quantum well active layer near the end face and the remaining cap layer are removed. A p- or i-In0.49Ga0.51P upper second optical waveguide layer, a p-Alz1Ga1-z1As upper cladding layer and a p-GaAs contact layer are deposited thereon.

Abstract: An integrated optically pumped vertical cavity surface emitting laser (VCSEL) is formed by integrating an electrically pumped in-plane semiconductor laser and a vertical cavity surface emitting laser together with a beam steering element formed with the in-plane semiconductor laser. The in-plane semiconductor laser can be a number of different types of in-plane lasers including an edge emitting laser, an in-plane surface emitting laser, or a folded cavity surface emitting laser. The in-plane semiconductor laser optically pumps the VCSEL to cause it to lase. The in-plane semiconductor laser is designed to emit photons of relatively short wavelengths while the VCSEL is designed to emit photons of relatively long wavelengths. The in-plane semiconductor laser and the VCSEL can be coupled together in a number of ways including atomic bonding, wafer bonding, metal bonding, epoxy glue or other well know semiconductor bonding techniques. The beam steering element can be an optical grating or a mirrored surface.

Abstract: An optical wavelength converter based on cross-gain modulation with wide input dynamic range, the converter including a semiconductor optical amplifier, a continuous wave source, and a probe beam controller. The semiconductor optical amplifier modulates probe power on the basis of pump power. The continuous wave source generates the probe beam and supplies the generated probe beam to the semiconductor optical amplifier. The probe beam controller adjusts bias current supplied to the continuous wave source and controls the probe power in proportion to the pump power.

Abstract: A method for operating a code reader and a code reader. According to the method, laser light is transmitted from a laser light source to illuminate an object having a code, wherein the laser light is amplitude-modulated to reduce the speckle noise of the light illuminating the object. Reflected or re-emitted light from the object is received by a light receiver. According to the code reader, the code reader includes a light transmitter having a laser light source adapted for transmitting laser light to illuminate an object having a code. The code reader also includes a light receiver arranged for receiving reflected or re-emitted light from the object and for producing electrical signals corresponding to the received light. The code reader also includes a modulation apparatus that modulates the laser light source such that amplitude-modulated light can be transmitted from the laser light source to the object.

Abstract: A new class of lasers is provided that can be pumped by conventional high-power, multi-mode, broadband 1-D and 2-D laser diode arrays, where the pumped laser gain medium comprises an atomic vapor of one the alkali elements (Li, Na, K, Rb or Cs), buffered with a mixture of rare-gas (He, Ar, Kr, Ne or Xe) and selected molecular gases. The alkali atom gain medium is pumped at a wavelength matching the wavelength of the 2S1/2−2P3/2 electric-dipole-allowed transition (the D2 transition). After kinetic relaxation of pump excitation to the excited 2P1/2 electronic level, laser emission takes place on the 2P1/2−2S1/2 transition (the D1 transition).

Abstract: A laser device which has an excellent characteristic originally exerted by an yttrium-aluminum-garnet crystal doped with neodymium and is entirely reduced in size by using an entirely downsized laser medium is provided. The laser device is constituted such that a laser medium is disposed in a resonator, excited light is incident upon the laser medium so as to cause laser oscillation in the resonator, and laser light is emitted from the resonator. An yttrium-aluminum-garnet single crystal is used as the laser medium, in which neodymium is added at a concentration exceeding an atomicity ratio of 1.3%.

Abstract: A semiconductor laser excitation solid laser of the invention has a solid laser medium, a semiconductor laser for exciting the solid laser medium, a spectrometer for detecting a wavelength region of a radiation spectrum of the semiconductor laser for exciting the solid laser medium, computation means such as a comparator for normalizing an area of the detected spectrum detected by the spectrometer and computing an overlap area between the normalized detected spectrum and a normalized absorption spectrum involved in laser excitation of the solid laser medium, and temperature control means for controlling the temperature of the semiconductor laser based on the output from the computation means.

Abstract: Light from a first excitation light source is incident on one facet of a first optical fiber. A core is doped with a first rare earth substance. A resonant section induces light resonance in the core to generate resonant light, thereby providing selected light at the other facet of the first optical fiber. An optical multi/demultiplexer reflects the light of the selected wavelength in a direction different from that of the first optical fiber. A second excitation light source supplies light to the resonant section of the first optical fiber via the optical multi/demultiplexer and the other facet of the first optical fiber. A second optical fiber guides the light of the selected wavelength from the optical multi/demultiplexer to an exterior.

Abstract: In the basic Diode-Pumped Alkali Laser (DPAL) device, excitation to the n 2P3/2 electronic level by a single diode laser pump source leads to a population inversion between the first excited electronic 2P1/2 level and the ground 2S1/2 level, permitting the construction of efficient, high-power, compact DPAL laser oscillators in the near infrared spectral region. The present invention extends the single-step excitation DPAL to a two-step excitation, or up-conversion DPAL to produce efficient, powerful laser operation in the visible blue and near UV spectral regions (viz., in the range 460-323 nm). The present invention describes an apparatus and method that efficiently sums the energy of two, near-infrared diode pump photons in alkali vapor atoms, followed by stimulated emission to their electronic ground levels.

Abstract: A diode laser comprises a laser cavity defining a linear optical-path axis, and a current-pumped stripe region, said current-pumped stripe region being disposed within said laser cavity. The laser cavity includes an output surface perpendicular to the optical axis; and a reflection surface including a distributed Bragg reflector (DBR) grating and being disposed at a non-perpendicular angle to the optical-path axis.

Abstract: Semiconductor lasers are formed by integrating an electrically pumped semiconductor laser, a beam steering element and a vertical cavity surface emitting laser (VCSEL) together. The electrically pumped semiconductor laser is modulated to modulate a pump beam of photons at a first wavelength. The beam steering element directs the pump beam to the VCSEL to provide optical pumping. The VCSEL receives the pump beam of photons at the first wavelength and is stimulated to emit photons of a laser beam at a second wavelength longer than the first. In embodiments, index guiding is provided in the VCSEL to improve the optical pumping and emission efficiencies when the pump beam is modulated at high frequencies. Embodiments of the beam steering element include a silicon bench, a polymer element, and a facet included in the edge emitting laser and an external mirror. Embodiments of index guiding include an air gap to form a mesa and an oxide confinement ring shaped layer.

Abstract: An optically pumped solid-state laser in which an oscillator and optical amplifier are pumped by a common laser diode pump, with the pump beam first pumping the optical amplifier and a residual pump beam transmitted through the amplifier pumping the oscillator. Such an arrangement permits the use of high power laser diode arrays with poor focusability beams to be used as the laser pump to produce high energy laser pulses at least an order of magnitude greater than provided by the prior art and greatly expands the applications of such a solid-state laser.

Abstract: Modulated integrated optically pumped vertical cavity surface emitting lasers are formed by integrating an electrically pumped semiconductor laser and a vertical cavity surface emitting laser (VCSEL) together with a means of direct modulation of the electrically pumped semiconductor laser. In the preferred embodiments, the electrically pumped semiconductor laser is a type of folded cavity surface emitting laser (FCSEL). In a number of embodiments, the FCSEL is partitioned into two sections by a gap in material layers. In these embodiments, one section of the FCSEL is biased so as to maintain the generation of photons at a constant power level to pump the optically pumped VCSEL while the second section of the FCSEL is used for modulation and causes the optically pumped VCSEL to be modulated above the threshold. In another embodiment, an electric-absorption modulator is sandwiched between an electrically pumped FCSEL and an optically pumped VCSEL.

Abstract: A method for upgrading bandwidth in a fiber optic system utilizing Raman amplification and having an initial band capacity provided by a plurality of pumps including the steps of identifying a fiber optic system to be upgraded, activating at least one new pump in the fiber optic system necessary to provide upgraded band capacity to the fiber optic system while retaining the initial band capacity provided by the plurality of pumps, and adjusting power of at least one pump of the fiber optic system to minimize gain ripple or signal output ripple.

Abstract: A solid state laser device according to the present invention comprises a pumping semiconductor laser 11 for oscillating a laser light as a pumping light, a collimator lens 12 for leading the laser light to parallel rays, a focusing lens 21 for focusing the laser light led to the parallel rays by the collimator lens 12 and leading the focused laser light to a laser medium 22, the laser medium 22 for absorbing the laser light and outputting a spontaneous emission light and an optical resonator 25 for confining the spontaneous emission light to make the laser light oscillated by an induced emission, wherein the solid state laser device includes a housing 10 for storing the a pumping semiconductor laser 11 and the collimator lens 12 in a state of positioning them on the same optical axis 16, and a housing 20 for housing the focusing lens 21, the laser medium 22 and the optical resonator 25 in a state of positioning them on the same optical axis, and the housings are detachable.

Abstract: The present invention has applications in high-bandwidth communications systems and other applications that utilize modulated optical energy. In one aspect of the invention, a short cavity diode-pumped laser generates optical energy that may be modulated over a wide range of frequencies. In one embodiment, the short cavity diode-pumped laser may be modulated at rates up to 15 GHz. The short cavity diode-pumped laser may include a laser diode modulator and a laser coupled to the laser diode modulator having a cavity lifetime of less than about 100 picoseconds.

Abstract: A laser marker includes a collimator lens converting laser light emitted from a broad area semiconductor laser into substantially parallel beams of light, a cylindrical concave lens permitting to pass therethrough the laser light having passed through the collimator lens and being perpendicular to a plane of an active layer of the semiconductor laser, the cylindrical concave lens serving as a concave lens for the laser light having passed through the collimator lens and being parallel to the plane of the active layer, a cylindrical convex lens permitting to pass therethrough the laser light having passed through the concave lens and being perpendicular to the plane of the active layer of the semiconductor laser, the cylindrical convex lens serving as a convex lens for the laser light having passed through the collimator lens and being parallel to the plane of the active layer, and a focusing lens focusing the laser light having passed through the cylindrical convex lens.

Abstract: A system for producing singlet delta oxygen has a source of liquid oxygen. A reactor has an input connected to the source of liquid oxygen. An optical pump is connected to an optical input of the reactor. The system can be by used as a laser by placing an optical resonator and a source of molecular iodine near the output of the reactor.

Abstract: A light source device for pumping a solid-state laser medium of a laser generator, which is compact and capable of economically using LD bars constituting the LD stack with easy maintenance. The light source device is constituted by a plurality of LD modules. Each LD module comprises a plurality of cooling devices on which LD bars are respectively mounted and connection plates on both sides thereof. The LD bars are stacked such that longitudinal directions thereof extend perpendicular to a stacking direction thereof. A desired number of LD modules are mechanically connected with each other using the connection plates to form the LD stack. A sealing member is intervened between confronting connection plates of adjacent LD modules, so that flow passages of coolant formed in the respective LD modules are continuously connected. The connection plates have functions of fixedly supporting the cooling devices of each LD module and electrically connecting the adjacent LD modules.

Abstract: A pumping module for use in a solid state laser comprises an annular array of laser diode segments (10) forming a passage (24), each segment (10) comprising an extended body supporting a laser diode array (17) that extends along the longitudinal axis of the segment (10) for directing light into the passage (24) from an inner face (12) of the annular array, wherein adjacent side faces of any two segments (10) in the annular array are in sealing engagement. The inner faces (12) of the array of segments (10) form a continuous surface so that coolant can flow between a laser rod and the segments (10) to reduce localized heating.

Abstract: An integrated optically pumped vertical cavity surface emitting laser (VCSEL) is formed by integrating an electrically pumped in-plane semiconductor laser and a vertical cavity surface emitting laser together with a beam steering element formed with the in-plane semiconductor laser. The in-plane semiconductor laser can be a number of different types of in-plane lasers including an edge emitting laser, an in-plane surface emitting laser, or a folded cavity surface emitting laser. The in-plane semiconductor laser optically pumps the VCSEL to cause it to lase. The in-plane semiconductor laser is designed to emit photons of relatively short wavelengths while the VCSEL is designed to emit photons of relatively long wavelengths. The in-plane semiconductor laser and the VCSEL can be coupled together in a number of ways including atomic bonding, wafer bonding, metal bonding, epoxy glue or other well know semiconductor bonding techniques. The beam steering element can be an optical grating or a mirrored surface.

Abstract: A high power, diode pumped laser has a Nd:YVO4 gain media. Scaling to higher powers is achieved with the use of a low doped gain media, increasing the length of the gain media as well as increasing the pump volume. Passive cooling is extended to output powers of 10 W or greater.

Abstract: A tunable vertical cavity surface emitting laser (VCSEL) is formed by providing a gap in its laser cavity that can be adjusted to vary the gap distance therein to change the resonance of the cavity and the wavelength of photons that are generated. A pump laser provides a pump source of photons that are coupled into the laser cavity of the vertical cavity surface emitting laser. The vertical cavity surface emitting laser is coupled to a piezo-electric submount to form the gap in the laser cavity. The gap distance is adjusted to tune the vertical cavity surface emitting laser around its center wavelength by applying a voltage (i.e., an electric field) across the piezo-electric submount which causes mechanical stress therein. Alternate embodiments are disclosed including a joined unit of elements to form the tunable vertical cavity surface emitting laser as well as a system of elements to form the tunable vertical cavity surface emitting laser.

Abstract: The arrangement focuses a combined laser beam (33) composed of individual laser beams produced by laser diodes (2) on a common spot. Prismatic reflecting bodies (7,8) are arranged in depressions (11,12) provided in a common substrate (1) between parallel rows (R1,R2; R3,R4) of the laser diodes (2). Each reflecting body (7,8) has oppositely inclined reflecting surfaces arranged on opposite sides thereof for deflection of the individual laser beams from the two adjacent rows of laser diodes. Two cylindrical lenses (9) are arranged on opposite sides of each reflecting body (7,8) between the laser diodes and the reflective surfaces to convert elliptical remote fields of the laser beams into circularly symmetric remote fields. Laterally movable focusing lenses (14) for each individual laser beam are arranged on the reflecting bodies (7,8) between the common spot and the reflecting surfaces for individual adjustment of the laser beams, whereby the combined laser beam (33) is focussed on the common spot.

Abstract: External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: An integrated multiple-wavelength semiconductor pump laser module operable to generate a plurality of optical wavelength outputs on a single fiber comprising a base layer containing a multi-wavelength laser array and a wavelength multiplexer or combiner unit to produce a single output from a plurality of laser wavelengths. The laser array is operable to emit a plurality of wavelengths and each of the laser outputs is substantially oppositely opposed and proximately located to a corresponding combiner input such that laser output enters the combiner input without the use of optical fibers. In one aspect of the invention, the laser array is composed of individual high power DFB lasers. In a second aspect of the invention, the laser array is composed of a single material containing a plurality of lasers fabricated by altering the quantum well widths within the material. In a third aspect of the invention, the laser array and combiner unit are concurrently fabricated within a base layer of semiconductor material.

Abstract: In a laser-diode-pumped laser apparatus, a solid-state laser crystal doped with at least one rare-earth element including at least Pr3+ is pumped with a laser diode, and emits laser light. In the first aspect, the laser diode has an active layer made of one of an InGaN, InGaNAs, and GaNAs materials, and an optical wavelength conversion element converts the solid-state laser light into ultraviolet laser light by wavelength conversion. In the second aspect, the solid-state laser crystal is codoped with Pr3+ and at least one of Er3+, Ho3+, Dy3+, Eu3+, Sm3+, Pm3+, and Nd3+. In the third aspect, instead of the solid-state laser crystal, an optical fiber codoped with Pr3+ and at least one of Er3+, Ho3+, Dy3+, Eu3+, Sm3+, Pm3+, and Nd3+ is pumped with a GaN-based compound laser diode.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

Abstract: A system and method for laser light amplification provides amplification of a laser light beam emitted from a laser light source as low-amplification seed laser light signal. The low-amplification seed laser light signal is transmitted to an amplification component. The amplification component amplifies the low-amplification seed laser light signal by stimulating emissions of the population inversion provided by a pumping diode to generate an amplified laser light signal. The system and method further directs the amplified laser light signal to an output destination. The result of the present invention is a system and method of operation providing higher pulse rates, improved pointing stability, and optionally variable pulse rates for a variety of uses, including for non-destructive laser ultrasonic testing of materials.

Abstract: A semiconductor laser device includes: an active layer; upper waveguide layers and a lower waveguide layer sandwiching the active layer therebetween; upper and lower cladding layers sandwiching the active layer and the upper and lower waveguide layers therebetween; and a current-narrowing layer defining a current-injection region for injecting current to the active layer, wherein a diffraction grating having a periodical structure in a resonance cavity direction is buried in any one of the waveguide layers, the diffraction grating being present in at least a part of the current-injection region; and the waveguide layer in which the diffraction grating is buried and the cladding layer adjoining to that waveguide layer forms an interface which is substantially flat in the resonance cavity direction.

Abstract: An optical modulator and a semiconductor laser device including the optical modulator, both reducing variations in the refractive index of an optical modulator or making variations negative without an increase in loss or a decrease in extinction ratio, as well as an optical communications system increasing an interval of distance at which modulated light is transmitted, by use of the optical modulator and the semiconductor laser device including the optical modulator. The optical modulator includes a semiconductor substrate of a first conductivity type; a light absorption layer on the semiconductor substrate and having a multiple quantum well structure, the multiple quantum well structure including a first well layer and second well layers. The peak wavelength of the absorption spectrum of the second well layers is shorter than the peak wavelength of the absorption spectrum of the first well layers A semiconductor cladding layer of the second conductivity type is on the light absorption layer.

Abstract: According to the present invention, there is provided a solid-state laser diode comprising:

Abstract: A surface emitting semiconductor laser device includes a GaAs substrate, and first and second laser sections consecutively and monolithically formed on the GaAs substrate. The second laser section has an active layer structure having a bandgap wavelength longer than the bandgap wavelength of the active layer structure of the first laser section. The second laser section is pumped by a first laser emitted by the first laser section to emit second laser.

Abstract: The present invention provides for the generation of a controllable source of single photons generated one at a time using optical pumping of a single molecule at room temperature. A single fluorescent molecule is pumped by a light source so that the molecule is placed in its electronic excited state with high probability. The molecule then de-excites via the emission of a single photon, which can be collected by a means for collecting. The room temperature source of single photons is far more convenient and therefore more widely applicable. A high probability of single-photon emission for each incident pump pulse is provided, a property which is useful for transmission of sensitive data bits by the methods of quantum cryptography.

Abstract: Indicator light apparatus and methods associated with a laser beam having a primary wavelength enable an operator to see the indicator while wearing protective eyewear tuned to the primary wavelength. The apparatus includes a source of indicator light other than the primary wavelength, a first optical element for co-injecting the indicator light into the laser beam to form a co-propagating beam, and an optical or physical configuration enabling an operator to view light from the co-propagating beam. The first optical element may be some form of beam splitter or combiner, and the configuration enabling an operator to view light from the co-propagating beam uses a diffuser upon which the co-propagating beam impinges. The indicator light is preferably derived from an inexpensive source, such as a diode laser operating in the 670-690 nm range.

Abstract: Laser light emitted from an LD apparatus is concentrated and applied onto a laser light path region A of a slab-shaped YAG crystal 21 and the neighborhood thereof with the use of a concave lens and a pair of reflecting mirrors, a duct lens, or a plurality of cylindrical lenses, whereby a concentrated applied light intensity distribution in the side surface width direction (y-axis direction) of the slab-shaped YAG crystal is formed as a double-peak distribution having maximum values P1 and P2 at opposite end portions A1 and A2 of the laser light path region of the slab-shaped YAG crystal or in the neighborhoods thereof.

Abstract: An apparatus and method of hermetically sealing a pump module for a double cladded fiber in a pump module. The apparatus includes a hermetic pump module for coupling light from a pump source into an optical waveguide. The hermetic pump module includes a hermetically sealed housing, wherein the hermetically sealed housing contains an all-glass double cladded fiber with an outer cladding, an inner cladding, and a core, wherein the double cladded fiber includes a v-groove that extends through the outer cladding into the inner cladding, a pump source that emits a light, and a transparent substrate, bonded to the glass outer cladding with a transparent adhesive, wherein the light passes through the transparent substrate and into the all-glass double cladded fiber and the v-groove couples the light into the all-glass double cladded fiber. Alternatively, the substrate may be eliminated and the light directly coupled into the all-glass double cladded fiber.

Abstract: In accordance with the invention, a waveguide laser or amplifier having a peak absorption wavelength is provided with pump emitters having wavelengths deliberately offset from the peak absorption wavelength. The offset wavelengths of the emitters are chosen to enhance the thermal stability of the laser or amplifier. In one exemplary embodiment, the laser or amplifier is pumped by a bimodal distribution of emitters.

Abstract: A laser gain medium having a layered coating on at least certain surfaces of the laser gain medium. The layered coating having a reflective inner material and an absorptive scattering outside material.

Abstract: A cavity has a longitudinal hollow having opposite open ends. An excitation source, such as a YAG rod, is accommodated in the hollow of the cavity. A hollow, cylindrical rod holder is inserted into each of the opposite open ends of the hollow and is fitted over a corresponding end of the YAG rod. A seal is fitted into a hollow of the rod holder adjacent to a portion of the rod holder fitted over the end of the YAG rod. The seal includes an annular seal body with a U-shaped section, e.g. made from Teflon®, and fitted over an outer periphery of the YAG rod to grip the YAG rod, as well as a spring fitted in a groove of the seal body provided by the U-shaped section so as to circumferentially surround a gripped portion of the YAG rod.

Abstract: The laser source (1) includes a pumping system (2) and an active element (3) which comprises a doped elongate rod (4) and at least one optical block (5, 6) for guiding the pump rays (F) of at least one pump beam toward the rod (4). The pumping system (2) generates a number of parallel pump rays (F). The entry face (5A, 6A) of the optical block (5, 6) is inclined to the longitudinal axis (X-X) of the rod (4) and is not orthogonal to the pump rays (F) in order to deflect the pump rays (F) by refraction so as to transmit them toward the rod (4), and the inclination of the entry face (5A, 6A) is such that the pump rays (F) reach the bar (4) so as to be distributed over its entire length.

Abstract: External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation.

Abstract: A system for wavefront correction in an ultra high power laser. As the laser medium flows past the optical excitation source and the fluid warms its index of refraction changes creating an optical wedge. A system is provided for correcting the thermally induced optical phase errors.

Abstract: Methods and devices are provided for converting a fundamental wavelength of a fundamental beam generated by a surface-emitting diode laser having a first resonating cavity. According to some embodiments, a first nonlinear crystal disposed in a second resonating cavity external to first resonating cavity converts the fundamental beam to a first output beam having a first output wavelength different from the fundamental wavelength. Some embodiments include a second nonlinear crystal, which may be disposed in the second resonating cavity or in a third resonating cavity, for producing a second output beam having a second output wavelength different from the first output wavelength. In some such embodiments, the second nonlinear crystal converts the wavelength of the first output beam to produce the second output beam. In some embodiments, the second nonlinear crystal interacts with the first output beam and an infrared beam from another laser device to produce the second output beam.

Abstract: A vertical cavity surface emitting laser emitting at about 1.3 microns while being optically pumped by a vertical cavity surface emitting laser emitting at about 810 nanometers characterized in that the resonant cavities of the two lasers are coupled to increase the effectiveness of the pumping light to stimulate emission from the gain medium of the long-wavelength medium. The two lasers are formed in a multilayer stack of which all the layers are epitaxial except for the layers at the top of the stack that serve as a broad band output mirror and the upper bounding of the long wavelength laser.

Abstract: The invention is directed to optical devices comprising a solid-state structured glass substrate having at least one waveguide incorporated therein, particularly waveguides and lasers incorporating such structure. The invention is also directed to methods for modifying such devices and their properties. The waveguides and lasers of the invention provide advantageous high power and increased slope efficiency and find use, for example, in telecommunications applications.