Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a patterning device support constructed to support a patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate support constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. An actuator assembly is configured to move one of the supports with six degrees of freedom comprising x, y, z, rx, ry and rz directions. A controller controls the actuator assembly, and includes at least one compensator which is designed to dynamically decouple a dynamics of the actuator assembly in the degrees of freedom.

Abstract: There is provided a projection exposure system operable in a scanning mode along a scanning direction. The projection exposure system includes a collector that receives light having a wavelength ?193 nm and illuminates a region in a plane. The plane is defined by a local coordinate system having a y-direction parallel to the scanning direction and an x-direction perpendicular to the scanning direction. The collector includes (a) a first mirror shell, (b) a second mirror shell within the first mirror shell, and (c) a fastening device for fastening the first and second mirror shells. The mirror shells are substantially rotational symmetric about a common rotational axis. The fastening device has a support spoke that extends in a radial direction of the mirror shells, and the support spoke, when projected into the plane, yields a projection that is non-parallel to the y-direction.

Abstract: There is provided an attenuator for attenuating electromagnetic radiation of wavelengths Unequal to a used wavelength, including a grating element having i) grating grooves that produce a grating period (p), and ii) a grating plane. The grating period (p) is least about 150 times higher than the used wavelength.

Abstract: A lithographic apparatus including an illumination system configured to provide a beam of radiation; a support configured to support a patterning device, the patterning configured to impart the projection beam with a pattern in its cross-section; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; at least one mounting bracket configured to couple a second part of the apparatus to a first part thereof, the mounting bracket including a first rigid part, a second rigid part, and an elastic part connecting the first and second rigid parts, wherein a fixing mechanism is provided to fix the positions of the first rigid part and the second rigid part with respect to each other, the elastic part being less rigid than each of the rigid bracket parts, and the fixing mechanism is configured to couple the first and second rigid parts of the mounting bracket substantially by form fixation.

Abstract: The invention relates to a lithographic apparatus and a device manufacturing method. The lithographic apparatus is of the scanning type, in which a radiation beam effectively scans across a surface of a substrate. The apparatus comprises a beam attenuator, e.g. in the form of a filter, having an attenuation value profile that varies as a function of position along the scanning direction. Appropriate selection of the attenuation value profile allows the illumination of the substrate to be more homogeneous, since e.g. received dose effects due to pulse to pulse variations in a pulsed illumination source are much better averaged out.

Abstract: A projection optical system for digital lithography. The system includes an Offner imaging system defining an optical axis and having a well-corrected region. The system also includes spatial light modulators circumferentially arranged about the optical axis, such that optical beams emitted thereby propagate through the Offner imaging system within the well-corrected region.

Abstract: Disclosed is a measuring apparatus for measuring the position, size and/or shape of a light convergent point of an EUV light source. In one preferred form, the apparatus includes a light receiving device for receiving EUV light diverging from a light convergent point, an optical system for directing the EUV light toward the light receiving device, a light blocking member disposed in a portion of light path for the EUV light and having a plurality of openings, and a system for detecting a spatial distribution of the EUV light at the light convergent point, on the basis of reception of EUV light by the light receiving device.

Abstract: An immersion lithographic apparatus provides an immersion liquid including photosensitive material(s) configured to form a patterned film on the surface of a substrate on exposure to a radiation beam. Irradiation through the immersion liquid onto a substrate leads to deposition of a film on the substrate. Film formation occurs only in the photoirradiated region, so that the film formed has a pattern corresponding to the pattern of the radiation.

Abstract: A method is disclosed for creating a permanent pattern on a substrate. The method includes the steps of providing an array of photon sources, each of which provides a photon beam, providing an array of focusing elements, each of which focuses an associated photon beam from the array of photon sources onto a substrate, and creating a permanent pattern on a substrate using the array of focusing elements to respectively focus associated photon beams on the substrate.

Abstract: A laser produced plasma device comprises a shutter assembly for mitigating the contaminating effects of debris generated by the plasma. In one embodiment, the shutter assembly includes a rotatable shutter having at least one aperture that provides a line-of-sight between a radiation source and an exit of the device during a first period of rotation of the shutter, and obstructs the line-of-sight between the radiation source and the exit during a second period of rotation. The shutter assembly in this embodiment also includes a motor configured to rotate the shutter to permit passage of the X-rays through the at least one aperture during the first period of rotation, and to thereafter rotate the shutter to obstruct passage of the debris through the at least one aperture during the second period of rotation.

Abstract: Stage devices are disclosed for holding an object such as a reticle for use in microlithography. An exemplary stage device includes a movable object-holder that holds the object. At least one actuator moves the object-holder. A position-detector determines a position of the object-holder, wherein the position-detector produces a first position signal whenever the object-holder is not holding the object and produces a second position signal whenever the object-holder is holding the object. A controller, connected to the position-detector and to the at least one actuator, produces a first control signal upon receiving the first position signal and a second control signal upon receiving the second position signal. These control signals cause the at least one actuator to place or hold the object-holder at a pre-determined position whether the object-holder is not holding or is holding the object.

Abstract: A method of using x-rays to align screen printing of flip chip using x-ray sub-assembly in a chip fabricating assembly. X-rays are directed onto a substrate having receptor pads and a printing screen having fine apertures. The substrate is aligned with the printing screen based on the detection and analysis of the real-time image generated from the x-rays passing through the substrate and printing screen. The x-ray alignment system is capable of aligning gold plated receptor pads of five microns or less and disposed upon a low light contrast ceramic (e.g., 9011 alumina) substrate with a screen printing stencil having very small apertures of less than 125 microns.

Abstract: An extreme ultraviolet (EUV) AIM tool for both the EUV actinic lithography and high-resolution imaging or inspection is described. This tool can be extended to lithography nodes beyond the 32 nanometer (nm) node covering other short wavelength radiation such as soft X-rays. The metrology tool is preferably based on an imaging optic referred to as an Achromatic Fresnel Optic (AFO). The AFO is a transmissive optic that includes a diffractive Fresnel zone plate lens component and a dispersion-correcting refractive lens component. It retains all of the imaging properties of a Fresnel zone plate lens, including a demonstrated resolution capability of better than 25 nanometers and freedom from image distortion. It overcomes the chromatic aberration of the Fresnel zone plate lens and has a larger usable spectral bandwidth.

Abstract: A lithographic apparatus includes a radiation source configured to provide radiation to an illumination system, the radiation source configured to provide radiation in a first wavelength range and in a second wavelength range, the second wavelength range being different from the first wavelength range. A support is configured to support a patterning device, the patterning device is configured to impart the radiation with a pattern in its cross-section. A substrate table is configured to hold a substrate, and a projection system is configured to project the patterned radiation onto a target portion of a substrate. The first wavelength range is the primary wavelength of the lithographic apparatus. The second wavelength range is used for setup of the lithographic apparatus, the setup including one or more of calibration, qualification, performance test, and alignment. The second wavelength range may also be used for exposure of a further substrate.

Abstract: A cooling apparatus arranged in a vacuum or reduced pressure atmosphere for use with an optical element having an illuminated area onto which light is irradiated concave part includes a temperature variation mechanism that changes a temperature of part of the cooling apparatus in a non-contact manner.

Abstract: A radiation system for generating a beam of radiation is disclosed. The radiation system includes a pulsed EUV source for generating EUV radiation, and a spectral filter mounted in front of the EUV source for selectively passing a spectral range of a beam of EUV radiation from the EUV source. The spectral filter is mounted on a movable mount configured to be moved in synchronicity with the pulsed EUV source to prevent debris traveling from the EUV source from impacting the spectral filter. Accordingly, the spectral filter is kept substantially free from contamination by the debris.

Abstract: A lithographic projection apparatus includes reflector assembly, a foil trap, and a housing that is constructed and arranged to contain the reflector assembly and the foil trap. The reflector assembly is connected to the housing via a first wall, and the foil trap is connected to the housing via a second wall. The apparatus also includes a chamber between the foil trap and the reflector assembly. The chamber is defined by the housing, the first wall, and the second wall. The apparatus further includes a pump that is configured to create a vacuum in the chamber.

Abstract: An exposure apparatus includes a reflective element for reflecting and introducing light from a light source to a plate, at least one first driver for providing the reflective element with a force and/or a displacement in at least one directions, and at least one second driver for providing the reflective element with a force and/or a displacement in at least one directions, wherein the first and second drives are connected in series to each other.

Abstract: In an immersion lithography apparatus in which, for example, immersion liquid is supplied to a localized space, a plate is provided to divide the space into two parts. Such a division of the space may facilitate reduction of stray radiation, a temperature gradient, and the transportation of contaminants.

Abstract: A lithographic apparatus is disclosed. The apparatus includes an illumination system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate support that supports a substrate, a projection system that projects the patterned beam onto a target portion of the substrate, and a debris-mitigation system that mitigates debris particles which are formed during use of at least a part of the lithographic apparatus. The debris-mitigation system is arranged to apply a magnetic field so that at least charged debris particles are mitigated.

Abstract: An exposure method for projecting a pattern formed on a reflection plate onto a substrate, via a projection optical system, using extreme ultraviolet light. The method includes a detection step of detecting a relative position between a second mark formed on a plate holding unit for holding the reflection plate and a third mark formed on the reflection plate. The detection step includes sub-steps of (i) detecting light reflected from the second mark with a detector, (ii) detecting light reflected from the third mark with the detector, and (iii) changing a relative position between the plate holding unit and the detector between sub-steps (i) and (ii).

Abstract: An illumination system, particularly for wavelengths ?100 nm, with an object plane and a field plane, comprises a grating element and a physical diaphragm in a diaphragm plane, which is arranged downstream to the grating element in the beam path from the object plane to the field plane.

Abstract: There is provided a collector for illumination systems for light having a wavelength ?193 nm comprising. The collector includes (a) a first mirror shell adjacent to, and positioned inside of, a second mirror shell around a common axis of rotation, in which the first and second mirror shells are rotationally symmetric, and (b) a component in a region between the first and second mirror shells. The collector is for receiving the light from a light source via an object-side aperture and for illuminating an area in an image-side plane, and the region is not used by the light.

Abstract: An exposure apparatus which exposes substrates to a pattern on a master. The apparatus includes first, second and third chucks which hold the substrates, a first fine adjustment stage which holds the first chuck to perform fine driving, a second fine adjustment stage which holds the second chuck to perform fine driving, a coarse adjustment stage on which the first and second fine adjustment stages are mounted and which can move in an X-Y plane substantially perpendicular to an optical axis, an exposure unit which performs exposure operation for the substrate held by the first chuck, a measurement unit which performs measurement operation for the substrate held by the second chuck, and a controller which drives the coarse adjustment stage and causes the measurement and exposure units to perform the measurement and exposure operations, respectively.

Abstract: A grazing incidence mirror includes a mirror substrate and a mirror surface layer, the mirror surface layer including a first layer and a second layer, the first layer being positioned between the mirror substrate and the second layer. The first layer includes a material selected from the group of Mo, Nb and combinations thereof, and the second layer includes a material selected from the group of B, C, B4C, SiC and combinations thereof. Such a grazing incidence mirror can be used in lithographic apparatus and in device manufacturing methods and provides a reflectivity that may be larger than state of the art grazing incidence mirrors based on Ru.

Abstract: An exposure apparatus includes a projection device for projecting a pattern drawn on a surface of a master, a stage apparatus which moves at least a substrate of the master and a substrate relative to the projection device, and an exposure device for repeatedly exposing the substrate to the pattern of the master. A plurality of pipes connected to movable units of the stage apparatus are joined to each other at partial outer surfaces of the pipes and constitute an integrated pipe array. Electrical cables or signal line cables connected to the movable unit pass through hollow portions of some of the pipes serving as the integrated pipe array.

Abstract: In a radiation source for the generation of short-wavelength radiation, it is the object of the invention to effectively increase the protection of the collimator optics by a buffer gas without substantially reducing the radiation transmission. A vacuum chamber which encloses a radiation-emitting plasma and is outfitted with at least one feed line and one outlet line for a buffer gas in order to ensure protection against debris for at least one optical element which directs the radiation to a radiation outlet opening in the vacuum chamber has chamber areas with particle deceleration of varying magnitude by the buffer gas. The particle deceleration is greater at least in a first chamber area in which the optical element is arranged than in any other chamber area.

Abstract: The invention relates to a lithographic apparatus, a device manufacturing method and a device thus manufactured. The lithographic apparatus is of the scanning type, in which a target portion of a substrate is scanned through a patterned radiation beam. Inhomogeneities in the radiation beam may become visible in the form of stripes on the substrate. By imparting an additional movement to the substrate table and optionally to the patterning device of the apparatus, during scanning, in a direction at an angle with the scanning movement, such inhomogeneities are smeared out, and the overall homogeneity of the illumination may be improved.

Abstract: The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

Abstract: The hydrodynamic effects—which occur during immersion lithography as a result of the movement of the semiconductor wafer—in a liquid preferably provided between the last lens surface of the projection system and the semiconductor wafer can be avoided by means of a movable illumination region for illuminating a cutout of a mask containing a structure to that can be imaged onto the semiconductor wafer. A scan movement of the mask and the semiconductor wafer can be either reduced or entirely avoided by means of a movement of the illumination region.

Abstract: Disclosed is an exposure apparatus including a projection optical system for projecting a pattern of an original onto a substrate, a stage for holding the substrate, a cover for substantially surrounding an exposure light path, from an end portion of the projection optical system, at a side facing the stage, to the stage, a first supply port provided inside the cover, for supplying a purge gas into a space surrounded by the cover, and a first exhaust port provided in an end portion of said cover at a side facing the stage, for exhausting the gas.

Abstract: A holding system, provided on a movable stage, for holding an object from above, against gravity. The holding system includes at least one holding portion adapted to be in contact with the object, to hold the object from above, and at least one attracting portion for attracting a limited portion of the object upwardly, without contact thereto.

Abstract: The present invention relates to an apparatus for forming a pattern on a radiation sensitive material comprising a source to form a radiation beam, a scanning element to scan at least one beam from said radiation source over said radiation sensitive material, a modulator to modulate said at least one beam during scanning according to an input pattern data file, where said modulation of the beam creates a coherent sub-image on the workpiece and several sub-images are non-coherently superposed to create a final image. The invention also relates to a method of patterning a workpiece and a workpiece as such.

Abstract: A final element of a projection system of an immersion lithographic apparatus is configured for a liquid having a refractive index greater than a refractive index of the final element. In an embodiment, the final element comprises a convex meniscus shaped lens. Such a final element enables the effective numerical aperture of the lithographic apparatus to be increased and reduce total internal reflection of the projected beam as it passes through the final element to the liquid.

Abstract: The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

Abstract: The present invention makes it possible to obtain a multilayer film reflective mirror 61 comprising a first multilayer film 67 which is formed by alternately laminating Mo layers 671 and Si layers 673 on a substrate 63, and a second multilayer film 65 which is formed on top of the first multilayer film 67, and which is formed by alternately laminating Mo layers 651 and Si layers 653, wherein the thickness of the Mo layers in the first multilayer film is substantially equal to or smaller than the thickness of the Mo layers in the second multilayer film, and the ratio of the thickness of the Mo layers to the thickness of the Si layers in the first multilayer film is different from the ratio of these thicknesses in the second multilayer film. As a result, a multilayer film reflective mirror with a low internal stress in which a drop in the reflectivity is suppressed can be obtained.

Abstract: A projection lens for imaging a pattern arranged in an object plane onto an image plane using electromagnetic radiation from the extreme-ultraviolet (EUV) spectral region has several imaging mirrors between its object plane and image plane that define an optical axis of the projection lens and have reflective coatings. At least one of those mirrors has a graded reflective coating that has a film-thickness gradient that is rotationally symmetric with respect to a coating axis, where that coating axis is acentrically arranged with respect to the optical axis of the projection lens. Providing at least one acentric, graded, reflective coating allows designing projection lenses that allow highly uniform field illumination, combined with high total transmittance.

Abstract: A lighting system, particularly for use in extreme ultraviolet (EUV) lithography, comprising a projection lens for producing semiconductor elements for wavelengths ?193 nm is provided with a light source, an object plane, an exit pupil, a first optical element having first screen elements for producing light channels, and with a second optical element having second screen elements. A screen element of the second optical element is assigned to each light channel that is formed by one of the first screen elements of the first optical element. The screen elements of the first optical element and of the second optical element can be configured or arranged so that they produce, for each light channel, a continuous beam course from the light source up to the object plane. The angles of the first screen elements of the first optical element can be adjusted in order to modify a tilt.

Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.

Abstract: The present invention provides a curved honeycomb article having a first face, a second face, and a plurality of channels formed from the first face to the second face, each channel having a channel axis, the curved honeycomb article having a width of at least about 15 cm in at least one direction in the plane normal to a channel axis at its geometrical center, each channel having a virtual channel extension associated therewith, the virtual channel extensions defining a convergence area substantially smaller than the occluded area of the curved honeycomb article. Methods for making the curved honeycomb article and apparati using the curved honeycomb article are also disclosed.

Abstract: A method of making a gap between first and second objects have a predetermined value includes steps of introducing light to an entry window on the first object, detecting an intensity of light from an exit window on the first object, and positioning the second object, with respect to a direction concerning the gap, based on an intensity of light detected in the detecting step. The exit window is positioned so that light enters through the entry window of the first object, reflects off the second object, and then enters the exit window of the first object if the gap has the predetermined value.

Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

Abstract: A lithographic projection apparatus is disclosed. The apparatus includes a substrate support constructed to support a substrate, a projection system configured to project a patterned radiation beam onto a target portion of the substrate, and a frame onto which at least a part of the projection system is mounted. A fluid provider is arranged to provide a fluid between the substrate and a downstream end of the projection system. The apparatus also includes an actuator associated with the frame and with the fluid provider and arranged to position the fluid provider, and a cushion system for cushioning vibrational forces when the actuator positions the fluid provider.

Abstract: An immersion optical projection system for photolithography is provided. A transparent plate is located between a last lens element and the wafer during a usage of the system. The transparent plate has a lens-side surface and a wafer-side surface. The system is adapted to have a layer of lens-side fluid located between the last lens element and the lens-side surface of the transparent plate, e.g., when the last lens element is operably located over the wafer during a photolithography process. The system is also adapted to have a layer of wafer-side fluid located between the wafer-side surface of the transparent plate and the wafer, during a usage of the system. The wafer-side fluid may or may not be fluidly connected to the lens-side fluid. The wafer-side fluid may or may not differ from the lens-side fluid.

Abstract: An exposure apparatus includes a projection optical system for projecting an image of a pattern of a reticle onto an object, via a fluid that is filled in a space between said projection optical system and the object, a vibrator part for vibrating at least one of the fluid, the object, and the projection optical system, and a controller for controlling the vibrator part so that the vibration of at least one of the fluid, the object, and the projection optical system becomes a tolerance during a processing of the object.

Abstract: There is provided a microlithographic projector lens for EUV-lithography with a wavelegth in a range of 10–30 nm, an incident aperture diaphragm and an emergent aperture diaphragm for the transformation of an object field in an object plane into an image field in an image plane. The invention has a microlithographic projector lens that includes a first, second, third, fourth, fifth, sixth, seventh and eighth mirror, and a beam path from the object plane to the image plane that is free from obscuration.

Abstract: A scanning exposure apparatus includes a projection system, a stage system, a first detector and a control system. The stage system has first and second stages, each of which is movable independently in a plane while holding a substrate. The first detector detects focusing information of a vicinity of an outer circumference of the substrate during a detecting operation. The control system controls the stage system to perform the detecting operation with the first stage, while performing a first exposure operation on the substrate held by the second stage. After the first exposure operation, a second exposure operation for the substrate held on the first stage is performed, in which a shot area in the vicinity of the outer circumference of the substrate is exposed by moving the first stage while adjusting a position of the substrate surface held by the first stage using the detected focusing information.

Abstract: A projection optical system for digital lithography includes an Offner imaging system with a defined optical axis. The Offner imaging system has a well-corrected region. The system includes means for shaping an optical beam having an extent too large to fit within the well-corrected region to propagate through the Offner imaging system within the well-corrected region.

Abstract: A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and a distributor which is arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distributor in a first direction by a mirror surface. The distributor may include a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.

Abstract: A lithographic apparatus is disclosed. The lithographic apparatus includes a radiation source that produces EUV radiation, an illumination system that provides a beam of the EUV radiation produced by the radiation source, and a support structure that supports a patterning structure. The patterning structure is configured to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The radiation source includes a debris-mitigation system that mitigates debris particles which are formed during production of EUV radiation. The debris-mitigation system is configured to provide additional particles for interacting with the debris particles.