Abstract: In calibration of overlay performance of an immersion lithographic apparatus, two sets of overlay data are obtained from exposures carried out using normal and reversed meanders. The two data sets can then be used to eliminate effects due to wafer cooling.

Abstract: A multi-beam synchronous raster scanning lithography system includes a processor that generates electrical signals representing a desired exposure pattern at an output. A multi-beam source of exposing radiation generates a plurality of exposure beam. A beam modulator receives the electrical signals generated by the processor and modulates the plurality of exposing beams according to the desired exposure pattern. A beam deflector deflects the plurality of exposure beams by a predetermined distance along a first axis, thereby exposing a plurality of pixels along the first axis with the desired exposure pattern. A translation stage moves the substrate a predetermined distance along a second axis to position the substrate for a subsequent exposure of pixels along the first axis that results in a desired overlapping exposure dose profile.

Abstract: A device manufacturing method includes bringing pressure within a vacuum chamber of a lithographic projection apparatus to a temperature stabilizing pressure range; keeping the pressure within the vacuum chamber within the temperature stabilizing pressure range for a period of time so as to stabilize the temperature in the vacuum chamber; decreasing the pressure within the vacuum chamber to a production pressure range; generating a beam of radiation with a radiation system; patterning the beam of radiation; and projecting the patterned beam of radiation through the vacuum chamber onto a target portion of a layer of radiation-sensitive material on a substrate.

Abstract: There is disclosed an immersion exposure method of carrying out an exposure process in a state that liquid is at least partly filled between a substrate to be exposed and a projection optical system of an exposure apparatus carrying out the exposure process, comprising carrying out a process of making large a contact angle to the liquid with at least outer peripheral portion of a main surface of the substrate compared with a contact angle to the liquid with an area adjacent to the outer peripheral portion of the substrate, which area is a part of a surface of a substrate supporting side of a substrate support member supporting the substrate included in the exposure apparatus, and carrying out the exposure process.

Abstract: A vacuum operated lithographic apparatus includes a vacuum housing for providing a vacuum environment to a support constructed to support a patterning device, or a substrate table, or a projection system, or any combination thereof. An interior of the vacuum housing includes a plurality of transport circuits for transporting fluids and/or electrical signals for use in a first process mode for lithographic processing. At least one of the transport circuits is adapted to transport energy towards the interior of the vacuum housing to stimulate outgassing in the vacuum housing for use in a second process mode for bringing the lithographic apparatus into a vacuum operating condition.

Abstract: In the present invention, in the photolithography process in which a certain processing condition has been already set, a resist film on a substrate is exposed to light using a mask, which reduces only zero-order light of a light source at a predetermined light reduction rate and transmits the light, and then heated and developed so that the film on the substrate is reduced. Thereafter, the reduction in film thickness of the resist film is measured. The measured reduction in film thickness is then converted into a line width of a resist pattern on the already-set processing condition by a correlation function between the reduction in film thickness and the line width. Based on the converted line width, the temperature setting of the heating temperature at the time of heating after the exposure is performed. Consequently, the condition setting in the photolithography process is appropriately performed, resulting in improved uniformity of the line width of the resist pattern within the substrate.

Abstract: An intermediary layer is introduced between a lens and a wafer for an immersion lithography process. A non-supercritical gas is provided and condensed to form a layer of liquid between the lens and the wafer. The substrate may be irradiated through the lens and intermediary layer. In addition, the intermediary layer may then be evaporated. The non-supercritical gas may include superheated steam which may be condensed to form a layer of water between the lens and the wafer. The wafer may be irradiated with one of a EUV light and UV light. A system for introduction of an intermediary layer between a lens and a wafer for an immersion lithography process is also provided. The wafer for use in the immersion lithography process may includes a hydrophobic and hydrophilic surfaces to provide enhanced contact angles between the wafer and the intermediary liquid layer condensed on the wafer and to reduce light aberration provided from a light source through the intermediary liquid layer.

Abstract: A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

Abstract: The present invention relates to alignment of a writing system and a workpiece. In particular, it relates to alignment to write a second layer pattern on a workpiece that has a first layer pattern, using an SLM. It extends to producing a mask or reticle, and to producing a layer of a device using the mask or reticle. Particular aspects of the present invention are described in the claims, specification and drawings.

Abstract: An optic device, system and method for making are described. The optic device includes a first solid phase layer having a first index of refraction with a first photon transmission property and a second solid phase layer having a second index of refraction with a second photon transmission property. The first and second layers are conformal to each other. The optic device may be fabricated by vapor depositing a first layer and then vapor depositing a second layer thereupon. The first layer may be deposited onto a blank or substrate. The blank or substrate may be rotated during deposition. Further, a computer-controlled shutter may be used to alter the deposition rate of material along an axis of the optic device. Alternatively, the optic device may be moved at varying speeds through a vapor stream to alter the deposition rate of material.

Abstract: A lithographic apparatus comprises an illumination system, an array of individually controllable elements, a substrate table, a projection system, a position encoder, an imaging device, and an image processing unit. The illumination system conditions a radiation beam. The array of individually controllable elements modulates the cross-section of the radiation beam. The substrate table supports a substrate. The projection system projects the modulated radiation beam onto a target portion of the substrate, thereby applying a pattern to the target portion of the substrate. The pattern comprises a first line and a second line. The first line is offset from the second line. The position encoder determines a position of the substrate table. The position encoder comprises a position sensor and a scale. The scale comprises a plurality of lines intended to be straight and parallel to one another. The imaging device obtains an image of the first line and the second line.

Abstract: A multi-optical-layer optical element of a lithographic projection apparatus in which at least one optical layer is comprised of an alloy of Mo and Cr. That layer may form the outer most layer of a Mo/Si layer system with an optional protective outer coating of Ru. Furthermore, the multi-optical-layer optical element may be comprised of a plurality of interposed between Mo/Cr alloyed layers.

Abstract: An illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength especially ?193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: A collector that includes a laser produced plasma (LPP) extreme ultra violet (EUV) light source and a first optical path from the source to a mirror. The mirror is the first mirror that light emitted from the source and traveling along the first optical path impinges upon. The collector also includes a second optical path from the source to another mirror. The other mirror is the first mirror that light emitted from the source and raveling along the second path impinges upon. The mirror and the other mirror are oriented relative to the source such that light from the source traveling along the first optical path travels in a direction opposite to light traveling from the source along the second optical path. A collector having a discharge extreme ultra violet (EUV) light source.

Abstract: Various embodiments provide projection optics comprise a plurality of mirrors that provide high demagnification of, for example, about one hundred times or more. The projection optics may be used for photolithography processes, such as extreme ultraviolet lithography processes, to pattern microstructures.

Abstract: Direct patterning of nanometer scale features by interferometric lithography using a 46.9 nm laser is described. Multiple exposures using a Lloyd's mirror interferometer permitted printing of arrays having 60 nm FWHM features.

Abstract: A projection optical system used for an exposure apparatus to projecting a reduced size of an image of an object onto an image plane includes plural refractive elements that dispense with a reflective element having a substantial optical power, wherein the projection optical system forms an intermediate image.

Abstract: The present invention provides a standardized mechanical interface (SMIF) reticle pod that is configured to provide a controlled environment for supporting a reticle wherein the controlled environment is maintained substantially free of crystal growth causing contaminants. Accordingly, there is provided a layered filter with filter elements capable of filtering particulates and adsorbing gaseous contaminants. The filter has an inwardly facing face generally planar shaped with a surface area that is substantially half or more of the area of the reticle face. The inwardly facing face is placed in close proximity to the reticle patterned surface and has an area that is a significant fraction of the reticle patterned surface area. The SMIF pod is also provided with a purge system configured to inject a very dry gas within the controlled environment to flush the controlled environment of contaminants as well as to regenerate the filter.

Abstract: There is provided an illumination system for lithography with wavelengths of ?193 mn. The system comprises a first optical element, which is divided into first raster elements and lies in a first plane. The first plane defines an x-direction and a y-direction, the first raster elements each have an x-direction and a y-direction with an aspect ratio, and at least two of the first raster elements have aspect ratios of different magnitude.

Abstract: The invention relates to an illumination system with a light source emitting radiation with a wavelength ?193 nm, especially radiation in the EUV wavelength range. The invention comprises a first facetted optical element in a first plane with at least a first and second field raster element which receive the light of the light source and divide the same into a first and second bundle of light; a optical component comprising at least a second facetted optical element in a second plane with a first and second pupil raster element, with the first light bundle impinging upon the first pupil raster element and the second light bundle impinging upon the second pupil raster element, with an attenuator being arranged in or close to the second plane or a plane conjugated to the second plane at least in the first light bundle extending from the first field raster element to the first pupil raster element, wherein the optical component images the first and second field raster element into a field plane.

Abstract: A lithographic apparatus includes a radiation system including a radiation source for the production of a radiation beam, and a contaminant trap arranged in a path of the radiation beam. The contaminant trap includes a plurality of foils or plates defining channels which are arranged substantially parallel to the direction of propagation of said radiation beam. The foils or plates are oriented substantially radially with respect to an optical axis of the radiation beam. The contaminant trap is provided with a gas injector which is configured to inject gas at least at two different positions directly into at least one of the channels of the contaminant trap.

Abstract: A debris mitigation system for trapping debris coming from a tin debris-generating radiation source is provided. The debris mitigating system includes a debris barrier comprising a plurality of foils, and a cleaning system constructed and arranged to clean the foils. The cleaning system includes a supply unit to provide a liquid alloy to the foils to dissolve and flush trapped debris from the foils. The alloy includes gallium, indium, tin, or any combination thereof.

Abstract: An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

Abstract: A conduit system for a lithographic apparatus is disclosed, the conduit system including a conduit configured to guide a liquid or liquid-gas mixture, and a gas injection nozzle configured to introduce a gas in the liquid or liquid-gas mixture to at least partially absorb pressure peaks or waves in the liquid or liquid-gas mixture. In an embodiment, the gas injection nozzle may be arranged in a pump of the conduit system. The pump further includes a pump inlet, a pump outlet and a pump chamber between the pump inlet and the pump outlet arranged for compression of the liquid or liquid-gas mixture.

Abstract: A method of making a gap between first and second objects have a predetermined value includes steps of introducing light to an entry window on the first object, detecting an intensity of light from an exit window on the first object, and positioning the second object, with respect to a direction concerning the gap, based on an intensity of light detected in the detecting step. The exit window is positioned so that light enters through the entry window of the first object, reflects off the second object, and then enters the exit window of the first object if the gap has the predetermined value.

Abstract: A method of forming an exposure mask pattern providing edge division points P at edges of a design pattern (1) by predetermined intervals and correcting edge positions for each divided edge portion, wherein, for the design pattern (1), rectangular patterns (10) and (11) are formed having pairs of facing long sides and facing short sides in the design pattern (1). The rectangular patterns (10) and (11) are formed at portions having widths W1a and W2a of the long sides in the design pattern (1) within a predetermined interval W0, so that W1a?W0 and W2a?W0. Next, at each of the rectangular patterns (10) and (11), new edge division points P (P1) are given along each of the facing long sides at predetermined intervals t from start points P0 sharing a short side. Due to this, the exposure mask pattern used for lithography can be simplified and the precision of formation of a transfer pattern can be improved.

Abstract: A robot arm is configured to insert and remove an object from a conditioned environment using a carrier connected to the robot arm. The robot arm is positioned in a conditionable vessel, a wall of which vessel may deform when the interior is conditioned. Since the trajectory of the robot arm needs to be accurate, the robot arm is flexibly coupled to the vessel wall such that an orientation of the robot arm is independent from an orientation of the vessel wall. Further, a docking system is disclosed for use in a device including a robot arm having a carrier connected thereto.

Abstract: Illumination optics that can be used, for example, for EUV projection microlithography are disclosed. Also disclosed are illumination systems provided with such illumination optics, projection exposure apparatuses provided with such illumination systems, related methods of manufacturing microstructured elements, and microstructured elements obtained by these methods.

Abstract: An imaging apparatus having an illuminator configured to condition a beam of radiation having a wavelength equal to or shorter than 365 nm; a support structure to support a programmable patterning device, the programmable patterning device configured to pattern the beam according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a beam splitter located between the programmable patterning device and the substrate table configured to divert aside a portion of the patterned beam; and an image detector configured to analyze the portion of the patterned beam.

Abstract: A method and system for particle beam lithography, such as electron beam (EB) lithography, is disclosed. The method and system include selecting one of a plurality of cell patterns from a stencil mask and partially exposing the cell pattern to a particle beam, such as an electron beam, so as to selectively project a portion of the cell pattern on a substrate.

Abstract: A method of particle beam lithography includes selecting at least two cell patterns from a stencil, correcting proximity effect by dose control and by pattern modification for the at least two cell patterns, and writing the at least cell two patterns by one shot of the particle beam after proximity effect correction (PEC).

Abstract: A lithographic apparatus is disclosed. The apparatus includes the following components: an illumination system configured to condition a radiation beam, a support constructed to support a patterning device, a substrate support constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. At least one of the components that experiences a heat load in use is provided with an integrally mounted heating element arranged to maintain the component at a substantially constant temperature.

Abstract: An immersion lithography apparatus is disclosed having a liquid supply system configured to at least partially fill a space between a final element of a projection system and a substrate table, with a first liquid, and a measurement system configured to measure a location of each of a plurality of points on the substrate, the measurement system being arranged such that measurements take place through a second liquid, the second liquid not being supplied by the liquid supply system.

Abstract: An attenuation adjustment device is disclosed that includes a plurality of members configured to cast penumbras in a radiation beam illuminating a patterning device in a lithography apparatus. Furthermore, an attenuation control device is provided to adjust the members in such a manner as to control the attenuation of the patterned radiation beam projected onto a target portion of a substrate across the cross-section of the patterned radiation beam. The attenuation control device includes a detector configured to provide an output indicative of the position of each member in dependence on detection of a beam of detecting radiation reaching the detector after attenuation by the member.

Abstract: An exposure apparatus for exposing a substrate to light via a reticle. The apparatus includes a substrate stage configured to hold the substrate and to move, a projection optical system configured to project a pattern of the reticle onto the substrate, a flat plate having a surface whose height is substantially the same as that of the substrate held by the substrate stage and to move, a supply unit having a supply nozzle and configured to supply liquid through the supply nozzle to a gap formed between a final surface of the projection optical system and at least one of the substrate held by the substrate stage and the flat plate, a recovery unit having a recovery nozzle and configured to recover liquid filling the gap through the recovery nozzle, and a sensor arranged on the flat plate and configured to measure illuminance.

Abstract: A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective includes eight mirrors. The light path is provided via the eight mirrors, and is free of obscuration.

Abstract: In a lithographic projection apparatus, a structure surrounds a space between the projection system and a substrate table of the lithographic projection apparatus. Gas is used between the structure and the surface of the substrate to contain liquid in the space.

Abstract: Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

Abstract: The use of photon sieves may be as a pupil defining element in an illumination system; a field of defining elements in an illumination system; a pupil lens element in a projection lens; a color correction system in the projection system; or as a transmitting diffractive element for EUV.

Abstract: A contact lithography system includes a patterning tool for transferring a pattern to a substrate; and a capacitive alignment system disposed on the patterning tool for cooperating with a corresponding alignment system disposed on the substrate for determining relative alignment of the patterning tool and substrate. A method of aligning a patterning tool and a substrate in a contact lithography system includes determining, based on a signal transferred through capacitors formed by opposing conductive elements disposed respectively on the patterning tool and substrate, alignment of the patterning tool and substrate.

Abstract: A lithographic apparatus is disclosed that has a heater configured to supply energy to a patterning device to heat the patterning device to form a desired thermal distortion pattern of the patterning device and a controller configured to effect an optical correction in the apparatus corresponding to the desired thermal distortion pattern to reduce the effect of thermal distortion of the patterning device on a pattern.

Abstract: A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Abstract: Systems and methods are disclosed for cleaning a chamber window of an extreme ultraviolet (EUV) light source. The window may have an inside surface facing a chamber interior and an opposed outside surface and the light source may generate debris by plasma formation. For the system, a subsystem may be positioned outside the chamber and may be operable to pass energy through the window to heat debris accumulating on the inside surface of the window. In a first embodiment, the subsystem may place a flowing, heated gas in contact with the outside surface of the window. In another embodiment, electromagnetic radiation may be passed through the window.

Abstract: Numerous embodiments of a debris mitigation device are disclosed. One embodiment of the claimed subject matter may comprise a debris mitigation device for use in photolithography processes. In one embodiment, the debris mitigation device comprises a foil trap device. The foil trap device, in this embodiment, comprises a plurality of electrically conductive elements and one or more mounting devices, where the plurality of electrically conductive elements are coupled to the one or more mounting devices in such as way as to provide a space between one or more adjacent elements. In this embodiment, the elements are foil elements, and adjacent foil elements carry alternating potentials.

Abstract: The mask in a lithographic apparatus is clamped on a first side using a first clamping device and on a second side, different from the first side, using a second clamping device. The clamping forces are preferably applied using thin membranes. The first clamp clamps the substrate in directions parallel to the plane of the patterning device, perpendicular to the plane of the patterning device and rotationally. The second clamping device clamps the patterning device only in directions parallel to the plane of the substrate.

Abstract: An X-ray generator introducing an X-ray to an illumination optical system includes plural plasma light sources, and a reflector, movably arranged among the plural light sources, for switching light sources and for reflecting the X-ray from one of the plural light sources to the illumination optical system, wherein an angle between a plane determined by an optical axis of the X-ray emitted from the reflector and a line that connects the plural light sources to the reflector, and a polarization plane on which an electric field vector oscillates is between 45° and 135°, the polarization plane maximizing a reflectance to the X-ray of the illumination optical system.

Abstract: An X-ray generator for generating plasma and X-ray emitted from the plasma includes a unit for generating the plasma, and plural reflection optical systems for introducing the X-ray through different optical paths.

Abstract: A radiation system for providing a projection beam of radiation is disclosed. The radiation system includes an extreme ultraviolet source for providing extreme ultra violet radiation, and a contamination barrier that includes a plurality of closely packed foil plates for trapping contaminant material coming from the radiation source. The contamination barrier encloses the extreme ultraviolet radiation source.

Abstract: A high performance focusing actuator of a voice coil motor comprises a retaining unit having a plastic retaining frame; a center portion of the plastic retaining frame being a receiving space; two opposite corners of the receiving space being chamfered; an inner side of each chamfered side being formed with a slide portion; and a metal rear cover plate having a shape corresponding to that of the plastic retaining frame; the metal rear cover plate having an open space coaxial with the receiving space of the plastic retaining frame; an outer side of the metal rear cover plate having four outer plates; each of two opposite corners of each outer plate being formed with an inclined guide surface corresponding to the slide portion of the plastic retaining frame; an iron receiving gap being formed between an inclined guide surface and outer plate; and each iron receiving gap receiving a magnet.

Abstract: There is provided an illumination system. The illumination system includes a first light source and a second light source, each of which are for providing light having a wavelength ?193 nm, and an optical element. The first light source illuminates a first area of the optical element and the second light source illuminates a second area of the optical element.