Abstract: Embodiments of the present invention enable generation of a simulated reference bitmap image that corresponds to a dot-pattern image. Certain applications of the present invention are its use in various embodiments of a system for inspection of a printed circuit board (“PCB”) substrate. In embodiments, a dot-pattern image and user-input configuration parameters are used to create an initialized simulated reference bitmap, and the dot pattern is mapped onto the reference bitmap using a scaling factor. In embodiments, reference bitmaps of individual sections of a dot-pattern image may be generated separately.

Abstract: This solution relates to machine vision computing environments, and more specifically relates to a system and method for selectively accelerating the execution of image processing applications using a cell computing system. The invention provides a high performance machine vision system over the prior art and provides a method for executing image processing applications on a Cell and BPE3 image processing system. Moreover, implementations of the invention provide a machine vision system and method for distributing and managing the execution of image processing applications at a fine-grained level via a PCIe connected system. The hybrid system is replaced with the BPE3 and the switch is also eliminated from the prior in order to meet over 1 GB processing requirement.

Abstract: Image reconstruction is based on phase retrieval by combining incomplete Fourier-space magnitude data with real-space information. Phase retrieval is performed based on the Fourier-space magnitude data, where the real-space information is expressed in a form suitable to use as a phase retrieval constraint, preferably using a wavelet-space representation. The use of incomplete Fourier-space magnitude data advantageously reduces the amount of data required compared to approaches that need comprehensive Fourier-space magnitude data. The real space information can be regarded as partial information of the image being reconstructed. Depending on the application, more or less real space information may be available.

Abstract: One embodiment of the present invention provides a system that detects an occurrence of a given shape which has been fractured into a configuration of primitive shapes which is different from a desired configuration. The system selects a fractured-shape instantiation of the given shape, to which other fractured-shape instantiations for the given shape are compared. As a part of the comparison process, the system generates a filtered mask-pattern-description which includes primitive shapes in the mask-pattern-description that match at least one primitive shape in the selected fractured-shape instantiation. Next, the system identifies a first set of shape occurrences from the filtered mask-pattern-description which match the given shape, and identifies a second set of shape occurrences from the mask-pattern-description which match the given shape. The system then generates a third set of shape occurrences by performing an exclusive-OR comparison between the first and second sets of shape occurrences.

Abstract: A method includes generating, using a data processor, information showing variations of a parameter across a photo mask relative to an average value of the parameter measured at various locations on the photo mask. For example, the information can include data points, and each data point can be determined based on a ratio between a measurement value and an average of a plurality of measurement values.

Abstract: Aspects of the invention include a computer-implemented method of designing a photomask. In one embodiment, the method comprises: simulating a first photomask patterning process using a first photomask design to create simulated contours; comparing the simulated contours to a desired design; identifying regions not common to the simulated contours and the desired design; creating desired target shapes for a second photomask patterning process subsequent to the first photomask patterning process based upon the identified regions; and providing the desired target shapes for forming of a second photomask design based upon the desired target shapes.

Abstract: A system and method for restricting the number of layout patterns by pattern identification, matching and classification, includes decomposing the pattern windows into a low frequency component and a high frequency component using a wavelet analysis for an integrated circuit layout having a plurality of pattern windows. Using the low frequency component as an approximation, a plurality of moments is computed for each pattern window. The pattern windows are classified using a distance computation for respective moments of the pattern windows by comparing the distance computation to an error value to determine similarities between the pattern windows.

Abstract: The present invention provides a method including generating mask data to be used in an exposure apparatus including an illumination optical system and a projection optical system which projects a pattern of the mask onto a substrate, and fabricating a mask based on the generated mask data.

Abstract: Methods and systems for providing processing parameters in a secure format are disclosed. In one aspect, a method for providing semiconductor fabrication processing parameters to a design facility is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a model from the set of processing parameters; converting the model into a corresponding set of kernels; converting the set of kernels into a corresponding set of matrices; and communicating the set of matrices to the design facility. In another aspect, a method for providing semiconductor fabrication processing parameters is disclosed. The method comprises providing a set of processing parameters of a fabrication facility; creating a processing model from the set of processing parameters; encrypting the processing model into a format for use with a plurality of EDA tools; and communicating the encrypted processing model format to a design facility.

Abstract: The invention is directed to find a false defect from defect candidates and obtain a threshold with which the false defect can be eliminated by the smallest number of review times. Defect candidates are reviewed and selected as a defect or a false defect. By deleting a defect candidate having a characteristic quantity equal to or less than that of the false defect from a map or displaying it in another sign, the false defect can be determined visually. Since the defect candidate having the characteristic quantity equal to or less than that of the selected false defect is deleted from the map or displayed in another sign, the defect candidates unnecessary to set a threshold are not reviewed. The number of defect candidates to be reviewed can be largely reduced as compared with that in the conventional technique. Further, by repeating the above work, the threshold is automatically calculated, and an inspection result map with the threshold is displayed, so that a re-inspection is unnecessary.

Abstract: A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions to create a map of base doses of the beam in respective of said second regions and to prepare a map of proximity effect correction coefficients in respective of said second regions, using the maps to determine second corrected doses of the beam for proximity effect correction in the third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.

Abstract: A technique for determining a set of calibration parameters for use in a model of a photo-lithographic process is described. In this calibration technique, images of a test pattern that was produced using the photo-lithographic process are used to determine corresponding sets of calibration parameters. These images are associated with at least three different focal planes in an optical system, such as a photo-lithographic system that implements the photo-lithographic process. Moreover, an interpolation function is determined using the sets of calibration parameters. This interpolation function can be used to determine calibration parameters at an arbitrary focal plane in the photo-lithographic system for use in simulations of the photolithographic process, where the set of calibration parameters are used in a set of transmission cross coefficients in the model of the photo-lithographic process.

Abstract: An apparatus (10) for microlithographic projection exposure, which includes: an optical system (18) for imaging mask structures (16) onto a surface (21) of a substrate (20) by projecting the mask structures (16) with imaging radiation (13), the optical system (18) being configured to operate in the EUV and/or higher frequency wavelength range, and various structure defining a measurement beam path (36) for guiding measurement radiation (34), the measurement beam path (36) extending within the optical system (18) such that the measurement radiation (34) only partially passes through the optical system (18) during operation of the apparatus (10).

Abstract: A method for characterizing thermomechanical properties of an organic substrate is provided.

Abstract: A method for evaluating a feature. The method includes receiving an image of the feature and determining respective coordinates of a plurality of points on an edge of the feature in the image. A figure having a non-circular and non-linear shape is fitted to the plurality of points, and respective distances between the plurality of points and the figure are determined. A roughness parameter for the feature is computed using the respective distances. The method may be applied in the analysis of critical dimensions (CD) of integrated circuits and, particularly, in the measurement of the edge roughness of their features and components as imaged using electron scanning microscopy (SEM).

Abstract: A method of inspecting a photomask includes directing radiation from a radiation source onto a photomask so that at least a portion of the radiation is transmitted through the photomask. A first photomask image is detected from the transmitted portion of the radiation transmitted through the photomask and perceptible at a second side of the photomask. A second photomask image is created by applying an exposure simulation model to a photomask design. A difference between the first photomask image and the second photomask image is then determined.

Abstract: In a method and apparatus for removing artifacts from an image generated a charged partial beam scanning device, a scanning method is determined, and the frequency of an artifact appearing on an image can then be determined, based on scanning method. A step 703, a frequency domain for removing an artifact can be determined from the vertical and horizontal widths determined by experimentation in advance with respect to the frequency position Photography is performed to obtain an image, which is Fourier transformed and the determined frequency domain is replaced, for example, by “0.” The resulting image is subjected to inverse Fourier transformation, and displayed and stored. The flow of such processing enables decreasing an artifact appearing on an image, depending on a scanning method.

Abstract: A defect size determining method measures a dimension A2 of a reference pattern 11s, a dimension B2 of an adjacent pattern 12s formed adjacent the reference pattern 11s, a dimension A1 of an evaluation pattern 11, and a dimension B1 of an adjacent pattern 12 formed adjacent the evaluation pattern 11, where the design value of the dimension A1 of the evaluation pattern 11 differs from the design value of the dimension A2 of the reference pattern 11s by a predetermined amount. The method then multiplies the measured value of the dimension A1 of the evaluation pattern 11 by the ratio of the measured value of the dimension B2 to the measured value of the dimension B1 and calculates the difference between the resulting value and the measured value of the dimension A2 of the reference pattern 11s to determine the defect size of the evaluation pattern 11.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A mechanism is provided for harmonic mean optical proximity correction (HMOPC). A lithographic simulator in a HMOPC mechanism generates an image of a mask shape based on a target shape on a wafer thereby forming one or more lithographic contours. A cost function evaluator module determines a geometric cost function associated with the one or more lithographic contours. An edge movement module minimizes the geometric cost function thereby forming a minimized geometric cost function. The edge movement module determines a set of edge movements for each slice in a set of slices associated with the one or more lithographic contours using the minimized geometric cost function. The edge movement module moves the edges of the mask shape using the set of edge movements for each slice in the set of slices. The HMOPC mechanism then produces a clean mask shape using the set of edge movements.

Abstract: Variations in critical dimensions of circuit features of sophisticated semiconductor devices may be reduced by efficiently extracting mask and/or imaging tool specific non-uniformities with high spatial resolution by using measured intensity values and simulated intensity values. For example, a tool internal radiation sensor may be used for measuring the intensity of an image of a lithography mask, while a simulated intensity enables eliminating the mask pattern specific intensity contributions. In this manner, high spatial resolution of the corresponding correction map may be obtained without undue effort in terms of man power and measurement tool resources.

Abstract: Aspects of the present invention are related to systems, methods and apparatus for image-based automatic defect detection.

Abstract: An unevenness inspection method for inspecting presence of unevenness in a panel material, the method includes: acquiring a plurality of primary images by imaging the panel material under inspection on a plurality of levels of condition; creating a plurality of secondary images by processing the plurality of primary images to enhance variation of the image; creating a composite image by combining the plurality of secondary images with a prescribed weighting; and determining the presence of unevenness using the composite image, the prescribed weighting being determined so that a region having the unevenness can be distinguished from the other region, when the plurality of secondary images are created for the panel material for training use having unevenness and are combined into a composite image.

Abstract: According to the embodiment, an optical image intensity distribution to be formed in a resist arranged on a lower layer side of a diffraction pattern is calculated by performing a whole image exposure from an upper surface side of the diffraction pattern formed on a substrate. The optical image intensity distribution is calculated by using a multimode waveguide analysis model or a fractional Fourier transform with respect to the diffraction pattern.

Abstract: A pattern generating method includes: extracting, from a shape of a pattern generated on a substrate, a contour of the pattern shape; setting evaluation points as verification points for the pattern shape on the contour; calculating curvatures on the contour in the evaluation points; and verifying the pattern shape based on whether the curvatures satisfy a predetermined threshold set in advance.

Abstract: In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.

Abstract: When an information medium is copied, information is printed while preventing personal information from leaking. An image scanning section 2 scans the information medium and inputs the image. An identification section 64 calculates the size of the information medium from the inputted image and identifies the type of the information medium. The position of the unique image indicating personal information is fixed according to the information medium. An area determination section 63 identifies the unique image in the information medium and determines the position of the specific area in which the unique image exists in the inputted image. A control section 7 performs image processing for masking the specific area. An image forming section 3 prints the image in a state in which the unique image is hidden.

Abstract: An apparatus and method for automatically inspecting and repairing printed circuit boards includes an inspection functionality automatically inspecting printed circuit boards and providing a machine readable indication of regions thereon requiring repair. An automatic repair functionality employs the machine readable indication to repair the printed circuit boards at some of the regions thereon requiring repair. An automatic repair reformulation functionality automatically reinspects the printed circuit boards following an initial automatic repair operation, and provides to the automatic repair functionality a reformulated machine readable indication of regions thereon requiring repair.

Abstract: Provided is a substrate processing apparatus that includes: a peripheral exposing unit that performs a peripheral exposing process by irradiating light to a peripheral portion of a substrate while rotating the substrate held by a substrate holding unit using a rotation driving unit; a substrate inspecting unit that performs a substrate inspecting process based on a picked up image of the substrate while moving the substrate using a movement driving unit; and a control unit. The control unit controls the predetermined substrate processing to be stopped when the peripheral exposing process is included in the predetermined substrate processing and an error occurs in the peripheral exposing unit, and controls the substrate inspecting process to be skipped when no error occurs in both of the peripheral exposing unit and a transport unit, the substrate inspecting process is included in the predetermined substrate processing and an error occurs in the substrate inspecting unit.

Abstract: A technique for determining a set of calibration parameters for use in a model of a photo-lithographic process is described. In this calibration technique, images of a test pattern that was produced using the photo-lithographic process are used to determine corresponding sets of calibration parameters. These images are associated with at least three different focal planes in an optical system, such as a photo-lithographic system that implements the photo-lithographic process. Moreover, an interpolation function is determined using the sets of calibration parameters. This interpolation function can be used to determine calibration parameters at an arbitrary focal plane in the photo-lithographic system for use in simulations of the photo-lithographic process, where the set of calibration parameters are used in a set of transmission cross coefficients in the model of the photo-lithographic process.

Abstract: The inspection system arbitrarily selects from among a plurality of optical conditions to change a distribution of reflected or diffracted light component from an object being inspected. The inspection system has a one- or two-dimensional optoelectric conversion image sensor, optically acquires an image of the object by scanning a stage on which the object is mounted or scanning the image sensor, and processes the image to check for defects in the object. Under each optical condition (illumination optical system, detection optical system, scan direction, etc.) the object being inspected is imaged and, based on the brightness distribution and contrast in the detection field of the image sensor, image sensor output correction data is generated to correct the output of the image sensor.

Abstract: In the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), in order to make it possible to automatically image desired evaluation points (EPs) on a sample, and automatically measure the circuit pattern formed at the evaluation points, according to the present invention, in the dimension measurement of a circuit pattern using a scanning electron microscope (SEM), it is arranged that coordinate data of the EP and design data of the circuit pattern including the EP are used as an input, creation of a dimension measurement cursor for measuring the pattern existing in the EP and selection or setting of the dimension measurement method are automatically performed based on the EP coordinate data and the design data to automatically create a recipe, and automatic imaging/measurement is performed using the recipe.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A pattern verification apparatus includes a correction section creating a plurality of first data pieces; a determination section performing light intensity simulation to create a plurality of plots, determine whether or not each of the plurality of simulation result plots falls within an allowable range, and recognize two or more simulation result plots which do not fall within the allowable range as a plurality of second data pieces; an extraction section extracting a reference pattern of the plurality of original design patterns corresponding to the plurality of second data pieces; and a classifying section classifying the plurality of second data pieces into categories of the reference pattern.

Abstract: A data processing unit acquires a review image including a pattern defect on a substrate, compares the review image with a reference image thereby to extract a defect image, the reference image including no pattern defect, and performs an alignment between the review image and a self-layer design pattern image which is generated from design data belonging to the identical layer in a region corresponding to the review image. The data processing unit, then, based on result of the alignment, generates an another-layer design pattern image which is generated from design data belonging to another layer in the region corresponding to the review image, and, based on a synthesized image of the defect image and the another-layer design pattern image, determines the relative position relationship between the pattern defect and a pattern belonging to another layer, and judges the criticality based on the relative position relationship.

Abstract: According to one embodiment, a method includes acquiring information about a two-dimensional distribution of secondary electron intensity for a measurement target pattern, extracting, by a first method, an edge position of an edge for correction value acquisition, extracting, by a second method, an edge position of the edge for correction value acquisition, acquiring a difference between the edge positions extracted by the first and second methods, as a correction value, extracting, by the second method, an edge position of a desired edge based on the information about the two-dimensional distribution, and correcting the edge position of the desired edge based on the correction value.

Abstract: An apparatus for inspecting pattern defects, the apparatus including: an image acquisition unit which acquires an image of a specimen and stores the acquired image in an image memory; a defect candidate extraction unit which performs a defect candidate extraction process by using the acquired image, which is read from the image memory; and a defect detection unit which performs a defect detection process based on a partial image containing a defect candidate that is extracted by the defect candidate extraction unit, wherein the defect detection process performed by the defect detection unit is performed asynchronously with an image acquisition process that is performed by the image acquisition unit.

Abstract: A system for inspecting chips in a tray comprises a three-dimensional sensor, a focus computing unit, an image sensor and a focusing device. The three-dimensional sensor is used to obtain the height signals of surfaces of the chips. The focus computing unit calculates the focusing positions of chips. The surface inspection sensor is used to inspect the surfaces of the chips. The focusing device is used to bring the images of the surfaces of the chips into the focus of the image sensor.

Abstract: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion.

Abstract: Disclosed is a management method of a mask for exposure utilizing exposure energy information of a wafer. According to the present invention, in case of exposing wafers in exposure apparatuses, information on masks loaded on exposure apparatuses are calculated from the exposure apparatuses, the light energy values applied during the exposure of wafers by the corresponding masks are calculated, the calculated light energy values are stored in the data server, the same data are collected from all wafer exposure processes performed at plural exposure apparatuses within the semiconductor FAB and the exposure information about the exposure energy relating to plural masks used by plural exposure apparatuses are accumulated and managed.

Abstract: The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.

Abstract: A method for processing the image data of the surface of a wafer (2) recorded by at least one camera (5) is disclosed, wherein an image field (15) is defined for each camera (5) in such a way that the recorded image content is repeated after N recorded images. In an evaluation electronics (18) M utility programs (19) are determined, wherein M is equal to the number of recorded images after which the image content is repeated. The number M of utility programs (19) is adapted to the number N of images. Each of the M utility programs (19) of the plurality of recorded images is only fed with images having the same image contents in order to detect defects on the basis of the image contents of the images of the surface of the wafer. The results of the M utility programs (19) are respectively forwarded to a central program (20) in a sequential manner, which compiles a distribution of the defects present on the surface of the wafer (2) from the individual results of the M utility programs (19).

Abstract: A technique for identifying a defect in an object produced by a controllable process. A first type of data generated as a result of production of the object by the controllable process is obtained. A second type of data generated as a result of production of the object by the controllable process is obtained. The first type of data and the second type of data are jointly analyzed. A defect is identified in the object based on the joint analysis of the first type of data and the second type of data. By way of example, the controllable process comprises a semiconductor manufacturing process such as a silicon wafer manufacturing process and the object produced by the semiconductor manufacturing process comprises a processed wafer. The first type of data comprises tool trace data and the second type of data comprises wafer image data. The tool trace data is generated by a photolithographic tool.

Abstract: A pattern inspection apparatus includes a magnification conversion unit to convert first sample optical image data to higher resolution second sample optical image data, a low-pass filter configured to filter first design image data which has a resolution N times that of the first sample optical image data, an optical filter which calculates third design image data by convolving the second design image data with an optical model function, a coefficient acquisition unit configured to acquire a coefficient of the predetermined optical model function using the second sample optical image data and the third design image data, an optical image acquisition unit configured to acquire actual optical image data of an inspection target workpiece, a reference image data generation unit configured to generate reference image data corresponding to the actual optical image data, and a comparison unit configured to compare the actual optical image data with the reference image data.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A method is provided for determining the relative overlay shift of stacked layers, said method comprising the steps of: a) providing a reference image including a reference pattern that comprises first and second pattern elements; b) providing a measurement image of a measurement pattern, which comprises a first pattern element formed by a first one of the layers and a second pattern element formed by a second one of the layers; c) weighting the reference or measurement image such that a weighted first image is generated, in which the first pattern element is emphasized relative to the second pattern element; d) determining the relative shift of the first pattern element on the basis of the weighted first image and of the measurement or reference image not weighted in step c); e) weighting the reference or measurement image such that a weighted second image is generated, in which the second pattern element is emphasized relative to the first pattern element; f) determining the relative shift of the second pat

Abstract: A method includes providing a layout of an integrated circuit design, and generating a plurality of double patterning decompositions from the layout, with each of the plurality of double patterning decompositions including patterns separated to a first mask and a second mask of a double patterning mask set. A maximum shift between the first and the second masks is determined, wherein the maximum shift is a maximum expected mask shift in a manufacturing process for implementing the layout on a wafer. For each of the plurality of double patterning decompositions, a worst-case performance value is simulated using mask shifts within a range defined by the maximum shift. The step of simulating the worst-case performance includes calculating capacitance values corresponding to mask shifts, and the capacitance values are calculated using a high-order equation or a piecewise equation.

Abstract: A workpiece inspection apparatus includes a measured image generator unit configured to measure a pattern of a workpiece and generate a measured image; and a comparator unit configured to compare the measured image to a fiducial image, wherein said measured image generator unit includes a light-receiving device having an interconnection of two or more time delay integration (TDI) sensors each being arranged by two or more line sensors each being arranged by two or more pixels, for generating as the measured image an average value of pixel values excluding an abnormal pixel value from pixels of each TDI sensor with respect to a position of the pattern of the workpiece.

Abstract: A system and method for correlating data is provided. Generally, the system contains a scanning system having at least one inspection emitter. The scanning system situated to scan a structure and produce a quantity of inspection information. A local positioning system is in communication with the scanning system and situated to detect a location of the quantity of inspection information in relation to the structure. A quantity of computer-aided design data corresponding to the quantity of inspection information is included. An imaging system is in communication with the scanning system and the local positioning system, the imaging system situated to produce an overlay image of at least two of an image based from the structure, an image based from the quantity of inspection information and an image formed from at least a portion of the quantity of computer-aided design data.

Abstract: A method for finding edge points of an object is disclosed. The method includes receiving an electronic image of an object, selecting one or more edge points in the image of the object, creating an image template for each edge point in the object image. The method further includes receiving a command to measure a second object of the same kind as the object and obtaining a measured object image, reading the image templates for the same kind of object from the storage device, and finding a matched sub-image to each image template from the measured object image according to an image matching algorithm, obtaining a central point of each matched sub-image and displaying coordinates of the central point of the matched sub-image.