Abstract: The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.

Abstract: A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.

Abstract: A stream of defect data is received from a reticle inspection system. The defect data identifies defects that were detected for a plurality of different portions of a reticle. Before reviewing the defect data to determine whether the reticle passes inspection and as the stream of defect data continues to be received, some of the defects are automatically grouped with other most recently one or more received defects so as to form groups of substantially matching defects. Before reviewing the defect data to determine whether the reticle passes inspection and after all of the defect data for the reticle is received, one or more of the groups of defects that have a number above a predetermined threshold are automatically filtered from the defect data so as to form filtered defect data. The filtered defect data may then be provided to a review station for determining whether the reticle passes.

Abstract: Provided is a method for reducing phase defects on many different types of semiconductor mask blanks. The method includes receiving a semiconductor mask blank substrate, creating alignment marks on the surface of the substrate, performing an inspection of the surface of the substrate to locate a plurality of surface defects, and repairing the plurality of surface defects on the surface of the substrate. A semiconductor mask is also provided that includes a repaired substrate a multilayer stack comprising a plurality of molybdenum and silicon layers, a capping layer, an absorber layer, and in some instances a photoresist layer.

Abstract: A method for repairing a defect, such as a pinhole, on a photomask is described. In an example, a laser beam is used to form a matrix of laser burn spots in a substrate of the photomask proximate a defect, such as a pinhole, of the photomask. Each laser burn spot is formed at a focal point of the laser beam inside the substrate by melting a material of the substrate proximate to the defect. In an example, the defect is surrounded and covered by the matrix of laser burn spots. The matrix of laser burn spots can attenuate or block light from passing through the defect, such as the pinhole. The matrix of laser burn spots may repair the defect of the photomask without removing a pellicle and pellicle frame mounted on the photomask.

Abstract: In an electronic design automation technique for optical proximity correction, a mask is represented by a function with an exact analytical form over a mask region. Using the physics of optical projection, a solution based on a spatial frequency analysis is determined. Spatial frequencies above a cutoff are determined by the optical system do not contribute to the projected image. Spatial frequencies below this cutoff affect the print (and the mask), while those above the cutoff only affect the mask. Frequency components in the function below this cutoff frequency may be removed, which will help to reduce computational complexity.

Abstract: The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.

Abstract: An electronic device configured for defect detection is described. The electronic device includes a processor and instructions stored in memory that is in electronic communication with the processor. The electronic device performs background suppression on the image data based on a transform of the image data to obtain a score map. The electronic device also applies thresholding to the score map to generate a detection mask. The thresholding comprises bi-thresholding. The electronic device additionally detects any defects based on the detection mask. The electronic device further indicates any defects.

Abstract: According to one embodiment, in a method for inspecting a defect of an exposure mask, using an optical system which acquires a dark-field image, an arbitrary partial region where a uniform dark-field image is obtained on the mask is allocated at a defocus position to acquire an image. A detection threshold is decided using signal intensities of the acquired image and an area ratio between a desired inspection region and the partial region, so that a signal count indicating signal intensities greater than the detection threshold in the inspection region is less than a target false detection count. The mask is allocated in a just-in-focus position to acquire an image of the inspection region. A signal having a signal intensity of the acquired image, which indicates an intensity greater than the detection threshold, is determined as a defect.

Abstract: Compatibility between a depth image consumer and a plurality of different depth image producers is provided by receiving a native depth image having unsupported depth camera parameters that are not compatible with a depth image consumer, and converting the native depth image to a virtual depth image having supported virtual depth camera parameters that are compatible with the depth image consumer. This virtual depth image is then output to the depth image consumer.

Abstract: A method and system for performing model-based registration and critical dimension measurement is disclosed. The method includes: utilizing an imaging device to obtain at least one optical image of a measurement site specified for a photomask; retrieving a design of photomask and utilizing a computer model of the imaging device to generate at least one simulated image of the measurement site; adjusting at least one parameter of the computer model to minimize dissimilarities between the simulated images and the optical images, wherein the parameters includes at least a pattern registration parameter or a critical dimension parameter; and reporting the pattern registration parameter or the critical dimension parameter of the computer model when dissimilarities between the simulated images and the optical images are minimized.

Abstract: A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.

Abstract: A method to enable wafer result prediction includes collecting manufacturing data from various semiconductor manufacturing tools and metrology tools; choosing key parameters using an autokey method based on the manufacturing data; building a virtual metrology based on the key parameters; and predicting wafer results using the virtual metrology.

Abstract: A computerized system for classification of pixels in an inspection image into noise-indicative populations, the system including: an interface operable to obtain an inspection image and to provide information of the inspection image to a processor connected thereto which includes: a noise estimation module and a classification module configured to and provide a classification of the plurality of pixels of the inspection image into noise-indicative population types.

Abstract: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.

Abstract: A mask inspection apparatus includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample having a pattern formed thereon by the irradiation with the electron beam, image processing means for generating image data of the pattern on the basis of the quantity of the electrons, and control means for creating a line profile and a differential profile of the pattern formed on the sample on the basis of the quantity of the electrons detected by the electron detection means. The control means detects a rising edge and a falling edge of the pattern on the basis of the differential profile, and then generates mask data of a multi-level structure on the basis of data of the edges and the image data created by the image processing means.

Abstract: A disclosed identification method of identifying a data point distribution area on a coordinate plane includes dividing an area on the coordinate plane into divided areas so that the divided areas radiate from a division center point; selecting, in each of the divided areas, from among the data points in the divided area, a data point having the greatest distance from the division center point as a representative point; determining whether there is an overlapping area where a distribution representative point area overlaps a determination area; and determining, when there is the overlapping area, that the data group to be determined is a relevant data group.

Abstract: An image forming apparatus includes an image interpolation unit to compute a correct pixel value of a target pixel subject to interpolation of a halftone image. The image interpolation unit includes a base pattern setting unit to set a base pattern including the target pixel, a reference pattern setting unit to set reference pattern in a region peripheral to the target pixel, an analogous pattern acquisition unit to acquire at least one analogous pattern analogous to the base pattern from the reference pattern, a high-resolution pattern creating unit to create a high-resolution pattern having a predetermined resolution or higher by synthesizing the acquired analogous pattern, a pixel value estimating unit to compute an estimated pixel value of the target pixel based on the created high-resolution pattern, and a pixel value determination unit to determine the correct pixel value of the target pixel based on the computed estimated pixel value.

Abstract: A system receives a mask pattern and a first image of at least a portion of a photo-mask corresponding to the mask pattern. The system determines a second image of at least the portion of the photo-mask based on the first image and the mask pattern. This second image is characterized by additional spatial frequencies than the first image.

Abstract: A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.

Abstract: A method of detecting a defect, including the steps of: illuminating step for illuminating a sample with a light; detecting step for detecting light from the specimen which is illuminated by the light and forming an image by processing the detected light; processing step for extracting a defect candidate by processing the image of the sample formed in the detecting step and determining an inspection condition by using images including the image of the sample acquired in the detecting step, a partial image including the extracted defect candidate and a reference image which corresponds to the partial image including the defect candidate.

Abstract: A system for acquiring multiple images of objects, the system includes: a lateral transferor that comprises multiple lateral transferor portions adapted to transfer the objects to a lateral imaging area in a lateral manner; wherein each lateral transferor portion comprises a object receiver and a transfer element; wherein the transfer element moves the object receiver towards an imaging area unless encountering a resistance that is above a predefined resistance; and an imager that is configured to obtain images of two opposite sides of the object when the objects are positioned at the lateral imaging area.

Abstract: Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.

Abstract: A mask blank is provided by forming a plurality of films, including at least a thin film to be a transfer pattern, on a board. At the time of patterning a resist film of the mask blank according to pattern data, film information to check with a pattern is obtained for each of a plurality of the films.

Abstract: An inspection system for inspecting a surface of a wafer/mask/reticle can include a modular array. The modular array can include a plurality of time delay integration (TDI) sensor modules, each TDI sensor module having a TDI sensor and a plurality of localized circuits for driving and processing the TDI sensor. At least one of the localized circuits can control a clock associated with the TDI sensor. At least one light pipe can be used to distribute a source illumination to the plurality of TDI sensor modules. The plurality of TDI sensor modules can be positioned capture a same inspection region or different inspection regions. The plurality of TDI sensor modules can be identical or provide for different integration stages. Spacing of the modules can be arranged to provide 100% coverage of the inspection region in one pass or for fractional coverage requiring two or more passes for complete coverage.

Abstract: A method is provided for imaging a workpiece by capturing successive frames of an elongate stationary field of view transverse to a workpiece transit path of a robot, while the workpiece is transported by the robot. The robot transit path is illuminated with an elongate illumination pattern transverse to the transit path to obtain a workpiece image of successive frames. Motion-induced image distortion is prevented or reduced adjusting the camera frame rate in real time in proportion to changes in robot velocity profile of the workpiece along the transit path.

Abstract: The present invention discloses a method for decomposing a target pattern containing features to be printed on a wafer, into multiple patterns, the features having a plurality of patterns within a minimum pitch for processes utilized to image the target pattern. The method includes superposing a predefined kernel over a pixel, and moving the kernel from one pixel to another, the pixels representing the sub-patterns of the target pattern. Polarity of the kernel may be reversed when the pixel has a stored intensity value that is negative.

Abstract: A method for monitoring mask focus includes measuring profile asymmetries in a target feature including sub-resolution assist features and deriving a focus response based on a known correlation between the profile and focus of a corresponding mask. A computer system in a lithographic process may adjust mask focus based on such derived information to conform to a desired fabrication process.

Abstract: A pattern analysis method includes the steps of: grouping a plurality of polygons in a circuit layout into a plurality of polygon groups; locating a potential defect area of each polygon group according to an aerial image of the circuit layout; determining a representing point of the potential defect area of each polygon group; determining representing points of the plurality of polygons in each polygon group; and comparing a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in one of the polygon groups with a distribution pattern of the representing points of the plurality of polygons relative to the representing point of the potential defect area in another of the polygon groups. The steps aforesaid are executed by a processor in a computer system.

Abstract: An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.

Abstract: Provided are novel methods and systems for inspecting photomasks to identify lithographically significant contamination defects. Inspection may be performed without a separate reference image provided from a database or another die. Inspection techniques described herein involve capturing one or more test images of a photomask and constructing corresponding test “simulation” images using specific lithographic and/or resist models. These test simulation images simulate printable and/or resist patterns of the inspected photomask. Furthermore, the initial test images are used in parallel operations to generate “synthetic” images. These images represent a defect-free photomask pattern. The synthetic images are then used for generating reference simulation images, which are similar to the test simulation images but are free from lithographically significant contamination defects.

Abstract: Provided is a thin film evaluation method for a transfer mask which is adapted to be applied with ArF excimer laser exposure light and comprises a thin film formed with a pattern on a transparent substrate. The method includes intermittently irradiating pulsed laser light onto the thin film to thereby evaluate the irradiation durability of the thin film.

Abstract: In order to highly sensitively detect fatal defects present in the vicinity of a direct peripheral circuit section in a chip formed on a semiconductor wafer, in the defect inspection device, which is provided with an illumination optical system that illuminates an inspection subject at predetermined optical conditions and a detection optical system that acquires image data by detecting scattered light from the inspection subject at predetermined detection conditions, a plurality of different defect determinations are performed for each region from a plurality of image data that differ in image data acquisition conditions or optical conditions and that are acquired by the detection optical system, and defect candidates are detected by consolidating the results.

Abstract: A burr detection apparatus includes an imaging unit and a detection unit. The imaging unit captures an original image of a stencil. The original comprises black and white pixels. The detection includes a CPU and a memory. The CPU includes an extracting module, a deciding module, a counting module, and a comparing module. The extracting module obtains a matrix image with N*N pixels, wherein N is an odd number. The deciding module decides whether the center pixel of the matrix image is a black pixel. The counting module obtains a black pixel total counted among marginal pixels which position in the margin of the matrix image in a predetermined rule. The comparing module compares the black pixel total with a predetermined threshold number, and determines that the part of the stencil corresponding to the matrix image has a burr when the black pixel total is less than the threshold number.

Abstract: A pattern measurement apparatus includes: an irradiation unit for irradiating a sample with an electron beam; an electron detection unit for detecting the amount of electrons generated from the sample on which a pattern is formed; an image processor for generating an SEM image of the pattern based on the amount of electrons; and a controller for acquiring a rectangular measurement specification region of the SEM image and calculating a loss ratio of a corner portion of the pattern from areas of the measurement specification region and the corner portion of the pattern. The controller detects edge positions in a predetermined range including a position where a corner of the measurement specification region intersects with a side of the SEM image, and adjusts the measurement specification region in accordance with the edge positions.

Abstract: A plurality of points with identical geometric feature is compared with their SEM characteristic features to inspect defect in a localized image. Original design information is included in the geometric feature such that absolute compare can be performed in this inspection method. Further, this method can also be applied to the localized image with or without repeated or redundant pattern.

Abstract: A defect inspection device according to one aspect of the present invention includes a light source, a detector that receives light from an illuminated region of a sample, a stage that changes a relative position between light from the light source and the sample in order to sequentially inspect a plurality of unit inspection regions, a comparator that compares a detection signal output from the detector with a threshold according to scanning in the stage, a mask position setting unit that sets a common position of the plurality of unit inspection regions as a mask position in order to mask the common position when the plurality of unit inspection regions are sequentially inspected, and a defect detection unit that detects a defect based on a comparison result in the comparison unit in another region than the mask position.

Abstract: A plurality of first multivalued images of non-defective items picked up by an image pickup device are obtained, and a plurality of characteristic amounts at least including a pixel value of a color component and edge intensities in two different directions are extracted for each pixel in the obtained first multivalued images. Selection of any one of the plurality of extracted characteristic amounts is received, and the characteristic amount of which selection is received is extracted, whereby a distribution range for determining the non-defective item is calculated. A second multivalued image of a determination target object is obtained, and the characteristic amount of which selection is received is extracted for each pixel in the obtained second multivalued image, whereby determination is made as to whether the characteristic amount is included in the distribution range corresponding to the extracted characteristic amount.

Abstract: A method of predicting product yield may include determining defect characteristics for a product based at least in part on inspection data associated with critical layers of the product, determining yield loss for each of the critical layers, and estimating product yield based on the determined yield loss of the critical layers. A corresponding apparatus is also provided.

Abstract: We presented an approach for speeding-up image acquisition when tasked with localizing specific structures in FIB-SEM imagery. It exploits the fact that low-quality images can be acquired faster than higher-quality ones and yet be sufficient for inference purposes. We have demonstrated greater than five-fold speed-ups at very little loss in accuracy in the context of mitochondria and synapse detection. Furthermore, the algorithm we propose is generic and applicable to many imaging modalities that allow trading quality for speed.

Abstract: A method for matching characterizing features of an optical scanner against target characterizing features is provided. The characterizing features are produced from characterizing data (also referred to as a signature characteristic) produced from a scan of a mask by the scanner against target scanner signature characteristics produced from a scan of the mask by another optical scanner that produces the target scanner signature characteristic.

Abstract: Provided is an integrated circuit (IC) design method. The method includes receiving an IC design layout having a feature with an outer boundary, performing a dissection on the feature to divide the outer boundary into a plurality of segments, and performing, using the segments, an optical proximity correction (OPC) on the feature to generate a modified outer boundary. The method also includes simulating a photolithography exposure of the feature with the modified outer boundary to create a contour and performing an OPC evaluation to determine if the contour is within a threshold. Additionally, the method includes repeating the performing a dissection, the performing an optical proximity correction, and the simulating if the contour does not meet the threshold, wherein each repeated dissection and each repeated optical proximity correction is performed on the modified outer boundary generated by the previously performed optical proximity correction.

Abstract: A method of identifying defects including producing, with an imaging system, an original image of a fabricated article having a feature thereon, the feature having an intended height and extracting a contour image from the original image, the contour image having an outline of those portions of the feature having a height approximate to the intended height. The method also includes producing a simulated image of the article based upon the contour and creating a defect image based on the differences between the simulated image and the original image, the defect image including any portions of the feature having a height less than the intended height.

Abstract: A method for classification includes receiving an image of an area of a semiconductor wafer on which a pattern has been formed, the area containing an image location of interest, and receiving computer-aided design (CAD) data relating to the pattern comprising a CAD location of interest corresponding to the image location of interest. At least one value for one or more attributes of the image location of interest is computed based on a context of the CAD location of interest with respect to the CAD data.

Abstract: A mask inspection system includes irradiation means for irradiating a sample with an electron beam, electron detection means for detecting a quantity of electrons generated from the sample, image processing means, storage means, and control means for determining divided areas in such a way that divided images adjacent to each other overlap with each other, and acquiring the divided images of the respective divided areas. The control means extracts two divided images adjacent to each other in a predetermined sequence, then detects an image of a same pattern formation area included in an overlap area, and determines the detected image to be a combination reference image. The control means then combines the two divided images adjacent to each other on the basis of the combination reference image to thereby form an entire SEM image of the observed area.

Abstract: A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.

Abstract: A method for characterizing the resolution of mask inspection tool using a test mask and a database containing defect data. A variety of defect types and sizes is programmed into the database, and the database is then used to inspect the defect-free mask. All defects programmed into the database are not captured in performing the method, so the resolution capability of an inspection tool can be determined.

Abstract: A CD metrology system and method of classifying similar structural elements. The method includes: a) obtaining an image of the semiconductor structure; b) identifying sufficient numbers of structural elements belonging to first and second groups of similar structural elements, each group originating from a different manufacturing stage; c) assessing to each given structural element within the sufficient numbers of structural elements belonging to the first and second groups, one or more features indicative of a respective manufacturing stage, wherein values of the respective features are derived from the obtained image and; d) using results of the assessment for a classification decision related to manufacturing stages and, respectively, originating therefrom structural elements in the first and second groups of similar structural elements.

Abstract: A method for determining the location of an additive, especially an additive that is not visible to a consumer, in an article with respect to a surface feature of the article is provided.

Abstract: A stream of defect data is received from a reticle inspection system. The defect data identifies defects that were detected for a plurality of different portions of a reticle. Before reviewing the defect data to determine whether the reticle passes inspection and as the stream of defect data continues to be received, some of the defects are automatically grouped with other most recently one or more received defects on as form groups of substantially matching defects. Before reviewing the defect data to determine whether the reticle passes inspection and after all of the defect data for the reticle is received, one or more of the groups of defects that have a number above a predetermined threshold are automatically filtered from the defect data on as to form filtered defect data. The filtered defect data may then be provided to a review station for determining whether the reticle passes.