Abstract: Aspects of the present disclosure are directed to a multi-section mismatched modulator. In one embodiment, a segmented bias electrode is provided along the length of the optical waveguide in the optical modulator. Each segmented bias electrode may have a pre-determined bias voltage that can reduce impedance mismatches along the length of the signal electrode to reduce echoes and ripples in the modulation signal. In an embodiment implemented as a P-I-N diode modulator, the bias electrode is used to apply a reverse bias transversely to the section of the diode modulator between the bias electrode and the signal electrode. According to an aspect, RF impedance along the length of the signal electrode can be tuned by adjusting the magnitude of the reverse-bias point at different segments of the bias electrode, and be matched to a desirable impedance value to reduce reflection and ripple effects.

Abstract: To provide an optical modulation element whereby reduced drive voltage and suppression of DC drift can be obtained at the same time. An optical modulation element includes: a substrate; and an optical waveguide formed of an electrooptic material film formed on the substrate and having a ridge part which is a protruding portion, and a slab part having a smaller film thickness than the ridge part 11r. The optical waveguide includes a first waveguide part having a first ridge width and a first slab film thickness and to which an RF signal is applied, and a second waveguide part having a second ridge width and a second slab film thickness different from the first slab film thickness and to which a DC bias is applied.

Abstract: Integrated optical devices and methods of forming the same are disclosed. A method of forming an integrated optical device includes the following steps. A substrate is provided. The substrate includes, from bottom to top, a first semiconductor layer, an insulating layer and a second semiconductor layer. The second semiconductor layer is patterned to form a waveguide pattern. A surface smoothing treatment is performed to the waveguide pattern until a surface roughness Rz of the waveguide pattern is equal to or less than a desired value. A cladding layer is formed over the waveguide pattern.

Abstract: A display device includes a substrate, a first display element which is disposed on the substrate, and a plurality of diffraction patterns which are disposed on a path of light emitted from the first display element and arranged along a direction with a first period. when a width of a cross section of one of the plurality of diffraction patterns is defined as a first length, the first period and the first length satisfy Inequality (1): 0.4?d1/DP1?1,??(1) where DP1 is the first period, and d1 is the first length.

Abstract: A germanium based avalanche photo-diode device and method of manufacture thereof.

Abstract: A device can include a first compliant optrode. The first compliant optrode can be introduced into a tissue sample and can include a stack of flexible waveguide materials providing a first optical interface. The stack of flexible waveguide materials can have a thickness of less than about 100 microns. The first compliant optrode can be linear and can be configured to bend at a turn radius of less than about 300 microns.

Abstract: A electronic method, includes receiving, by a graphene structure, a SPP mode of a particular frequency. The electronic method includes receiving, by the graphene structure, a driving microwave voltage. The electronic method includes generating, by the graphene structure, an entanglement between optical and voltage fields.

Abstract: A display device includes a display panel including a light-emitting device to emit light; and an input sensor disposed on the display panel. The input sensor includes a first insulating layer disposed on the display panel; a first conductive layer disposed on the first insulating layer; a second insulating layer covering the first conductive layer; and a second conductive layer disposed on the second insulating layer. At least one of the first and second insulating layers includes a plurality of diffraction patterns arranged to diffract at least a portion of the light provided from the display panel.

Abstract: An athermal arrayed waveguide grating includes a silicon-based substrate and an athermal arrayed waveguide disposed on the silicon-based substrate. The athermal arrayed waveguide includes a cladding layer and a waveguide chip layer, the waveguide chip layer is disposed on the cladding layer and has a refractive index greater than that of the cladding layer; the waveguide core layer includes multilayer structures having a periodic configuration, the multilayer structure includes two layers of silica material and a negative temperature coefficient material disposed between the two layers of silica material; the negative temperature coefficient material is used to compensate for a dimensional deformation of the silicon-based substrate after being heated.

Abstract: An optoelectronic device, including: light-emitting sources, each light-emitting source being capable of emitting a first radiation at a first wavelength; photoluminescent blocks distributed into first photo-luminescent blocks capable of converting by optical pumping the first radiation into a second radiation at a second wavelength and second photoluminescent blocks capable of converting by optical pumping the first radiation into a third radiation at a third wavelength; and for each photoluminescent block, an optical coupler including a first photonic crystal at least partially surrounding the photoluminescent block and covering, with the photo-luminescent block, one of the light-emitting sources next to the photoluminescent block, the optical coupler being capable of modifying the propagation direction of rays of the first radiation emitted by the light-emitting source to redirect the rays towards the photoluminescent block.

Abstract: The invention relates to a photonic component (1) having at least one semiconductor laser amplifier (200), which has at least one first mirror surface (210a) for coupling and/or decoupling optical radiation (S). The first mirror surface (210a) of the semiconductor laser amplifier (200) is coupled to a photonically integrated chip (100), wherein the chip (100) is arranged such that the chip can emit optical radiation (S) from the chip top side (O100) thereof in the direction of the first mirror surface (210a) and couple said radiation in the semiconductor laser amplifier (200), and wherein the emitting of the radiation (S) away from the chip top side (O100) occurs in the direction of the first mirror surface (210a) at an angle of 90°±20°, in particular perpendicular, to the chip top side (O100).

Abstract: An optical delay device includes a multi-mode waveguide for propagating first light through at least a portion of the multi-mode waveguide. The multi-mode waveguide has a first width. The optical delay device also includes a first waveguide having a second width that is less than the first width and a first coupler connected to the multi-mode waveguide and the first waveguide for coupling the first light from the multi-mode waveguide to the first waveguide. The first waveguide includes a first portion connected to the first coupler for receiving the first light from the first coupler; and a second portion connected to the first portion for receiving the first light from the first portion and positioned adjacent to the multi-mode waveguide for coupling of the first light to the multi-mode waveguide as second light so that the second light propagates through at least the portion of the multi-mode waveguide.

Abstract: A electronic method, includes receiving, by a graphene structure, a SPP mode of a particular frequency. The electronic method includes receiving, by the graphene structure, a driving microwave voltage. The electronic method includes generating, by the graphene structure, an entanglement between optical and voltage fields.

Abstract: A electronic method, includes receiving, by a graphene structure, a SPP mode of a particular frequency. The electronic method includes receiving, by the graphene structure, a driving microwave voltage. The electronic method includes generating, by the graphene structure, an entanglement between optical and voltage fields.

Abstract: A germanium based avalanche photo-diode device and method of manufacture thereof. The device including: a silicon substrate; a lower doped silicon region, positioned above the substrate; a silicon multiplication region, positioned above the lower doped silicon region; an intermediate doped silicon region, positioned above the silicon multiplication region; an un-doped germanium absorption region, position above the intermediate doped silicon region; an upper doped germanium region, positioned above the un-doped germanium absorption region; and an input silicon waveguide; wherein: the un-doped germanium absorption region and the upper doped germanium region form a germanium waveguide which is coupled to the input waveguide, and the device also includes a first electrode and a second electrode, and the first electrode extends laterally to contact the lower doped silicon region and the second electrode extends laterally to contact the upper doped germanium region.

Abstract: A bonded body for an optical modulator includes a supporting substrate, an optical waveguide material provided on the supporting substrate and composed of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, and an optical waveguide in the optical waveguide material. The supporting substrate is composed of a material selected from the group consisting of magnesium oxide and a magnesium-silicon composite oxide.

Abstract: A germanium-on-silicon avalanche photodetector includes a silicon device layer of a silicon-on-insulator substrate having a central region characterized by modest-heavy n+ doping state between a first electrode region and a second electrode region in heavy n++ doping state; a first sub-layer of the central region modified to nearly neutral doping state and located from a first depth down to a second depth below a top surface of the silicon device layer; a second sub-layer of the central region modified to modest p doping state embedded from the top surface down to the first depth to interface with the first sub-layer; a layer of germanium with a bottom side attached to the top surface of the second sub-layer; and a third sub-layer embedded into a top side of the layer of germanium, characterized by heavy p++ doping state.

Abstract: A semiconductor device includes a first insulating film, a first optical waveguide and a second optical waveguide. The first insulating film has a first surface and a second surface opposite to the first surface. The first optical waveguide is formed on the first surface of the first insulating film. The second optical waveguide is formed on the second surface of the first insulating film. The second optical waveguide, in plan view, overlaps with an end portion of the first optical waveguide without overlapping with another end portion of the first optical waveguide.

Abstract: An electronic device such as a wearable device may have a light guide system. The light guide system may have one or more light guide members. The light guide members may be formed from transparent elastomeric material such as silicone or other flexible material. Light sources such as light-emitting diodes and/or lasers may be used to supply light to the light guide members. The light guide members may have light-scattering structures that are configured to scatter light out of the light guide members at one or more locations along the lengths of the light guide members. Optical isolation layers such as coatings of white polymer or other flexible structures may be used to help confine light within the light guide members. A detector may be coupled to a light guide to detect light guide deformation due to contact with an external object.

Abstract: An antenna module includes a connection member including at least one wiring layer and at least one insulating layer; an integrated circuit (IC) disposed on a first surface of the connection member and electrically connected to the at least one wiring layer; and a plurality of antenna cells each disposed on a second surface of the connection member. Each of the plurality of antenna cells includes an antenna member configured to transmit or receive a radio frequency (RF) signal, a feed via having one end electrically connected to the antenna member and the other end electrically connected to a corresponding wire of the at least one wiring layer, a dielectric layer surrounding side surfaces of the feed via and having a height greater than that of the at least one insulating layer, and a plating member surrounding side surfaces of the dielectric layer.

Abstract: Photonic integrated circuits utilizing interferometric effects, such as wavelength multiplexers/demultiplexers, include a free-space coupling region having two core layers that have thermo-optic coefficients of opposite sign. The two core layers are configured to provide athermal or nearly-athermal operation. Described examples include integrated array waveguide grating devices and integrated echelle grating devices. Example material systems include LNOI and SOI.

Abstract: A method for making a semiconductor device may include forming a plurality of waveguides on a substrate, and forming a superlattice overlying the substrate and waveguides. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming an active device layer on the superlattice comprising at least one active semiconductor device.

Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p? Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p? Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p? Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p? Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.

Abstract: An optoelectronic device, and a method of fabricating an optoelectronic device. The device comprising: a rib waveguide formed of doped silicon, said doped waveguide having a ridge portion, containing an uppermost surface and two sidewall surfaces; and a slab portion, adjacent to the two sidewall surfaces. The device further comprises: a metal contact layer, which directly abuts the uppermost surface and two sidewall surfaces, and which extends along a part of the slab portion so as to provide a Schottky barrier between the metal contact layer and the rib waveguide.

Abstract: A device for collecting light from one or more incident light beams includes a first surface extending in a first plane and a second surface spaced-apart from the first surface. The second surface extends in a second plane parallel to the first plane. At least one of the first surface and the second surface including an optical polish or forming a reflective mirror coating. An edge surface extends from the first surface to the second surface. At least a portion of the edge surface forms a reflective mirror. At least one structure is formed in the first surface. The structure extends inwardly into the device from the first surface. The structure is configured to redirect light from a light source directed at the first surface.

Abstract: A electronic method, includes receiving, by a graphene structure, a microwave signal. The microwave signal has a driving voltage level. The electronic method includes generating, by the graphene structure, optical photons based on the microvolts. The electronic method includes outputting, by the graphene structure, the optical photons.

Abstract: The present invention relates to an optical device comprising a first sub-chip and a second sub-chip flipped over on the first sub-chip. The first sub-chip includes a first substrate, a first lower cladding pattern on a first surface of the first substrate, and a first core layer on the first lower cladding pattern. The second sub-chip includes a second substrate, a second lower cladding pattern on a second surface of the second substrate, and a second core layer on the second lower cladding pattern. The first surface of the first substrate faces the second surface of the second substrate. The first lower cladding pattern has a first top surface parallel to the first surface and a first sidewall inclined to the first surface. The first core layer includes a first core part on the first top surface and a first side part on the first sidewall.

Abstract: A method and system for authenticating an item includes providing the item including a polymer substrate comprising a polymer material and a doping material, the polymer material and the doping material configured to transmit radiation laterally through the polymer substrate, and the doping material capable of scattering radiation and absorbing radiation of at least one specific wavelength to generate a spectral signature in a spectral band of wavelengths of the transmitted radiation, irradiating the item with incident radiation characterized by a spectral band of wavelengths spanning a band of wavelengths including the at least one specific wavelength absorbed and scattered by the doping material, detecting the spectral signature after the radiation is transmitted laterally through the polymer substrate, and determining a code associated with the spectral signature.

Abstract: A transparent display device includes a first transparent electrode layer, a second transparent electrode layer disposed opposite to the first transparent electrode layer, and a liquid crystal mixture layer disposed between the first transparent electrode layer and the second transparent electrode layer, wherein the liquid crystal mixture layer includes liquid crystal molecules and quantum rods.

Abstract: An electronic device may have a housing with a display. A protective display cover layer for the display may have an image transport layer such as a fiber optic plate. The fiber optic plate may be formed from fibers. An extruder may form fiber bundles that each include a respective plurality of fibers distributed in binder material. The fiber bundles from the extruder may be fed directly to a block forming die. The block forming die may receive the fiber bundles from the extruder and output a unitary fiber block. The fiber bundles may remain heated in the block forming die such that the binder material of the fiber bundles seamlessly merges during formation of the unitary fiber block. A cutter can be used to cut off a layer of the unitary fiber block. This layer may be machined and polished to form the fiber optic plate.

Abstract: Solid-state imaging devices, methods to produce the solid-state imaging devices, and electronic apparatuses including the solid-state imaging devices, where the solid-state imaging devices include a semiconductor substrate including a light receiving surface; a plurality of photoelectric conversion parts provided within the semiconductor substrate; and a plurality of reflection portions provided in the semiconductor substrate on a side of the photoelectric conversion parts that is opposite from the light receiving surface; where each of the reflection portions includes a reflection plate and a plurality of metal wirings, and where the plurality of metal wirings are disposed in a same layer of the semiconductor substrate as the reflection plate.

Abstract: An approach is disclosed that places a first side of an optical communication mounting frame (OCMF) onto a surface of a device with some of the device's display and its digital camera being are hidden from view from outside of the OCMF. A second device is received at another side of the OCMF, with some of the device's display and its digital camera being are hidden from view from outside of the OCMF. Each display is viewable from the other device's digital camera. Optical communications between the devices is performed by displaying data on one display that is read by the other device's digital camera and this communication is allowed while the OCMF is present. However, communication between the devices is inhibited when the OCMF is not present.

Abstract: Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to provide a plurality of dies; mounting the plurality of dies on a third substrate; joining the first substrate and the third substrate to form a composite structure; and joining a fourth substrate and the composite structure.

Abstract: In an optical apparatus, an introduced semiconductor device is heterointegrated on a silicon-based platform containing a silicon-based waveguide. A polymeric waveguide is optically coupled to the introduced semiconductor device and overlies at least a portion of the silicon-based waveguide. The polymeric waveguide is conformed as a multimode interference (MMI) coupler between the introduced semiconductor device and the silicon-based waveguide. At least the polymeric waveguide, and in embodiments, also the silicon-based waveguide, is tapered with a shape that effectuates optical coupling to the silicon-based waveguide.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: The present disclosure provides for laser integration into photonic platforms in which a first wafer, including a first substrate and a first insulator that includes a first plurality of dies that each include a first set of optical waveguides, is bonded to a second wafer, including a second substrate and a second insulator that includes a second plurality of dies that each include a second set of optical waveguides. The bond between the two wafers defines a wafer bond interface joining the first insulator with the second insulator and vertically aligning the first plurality of dies with the second plurality of dies such that respective first sets of optical waveguides are optically coupled with respective second sets of optical waveguides.

Abstract: Embodiments disclosed herein generally relate to optical coupling between a highly-confined waveguide region and a low confined waveguide region in an optical device. The low confined waveguide region includes a trench in a substrate of the optical device in order to provide additional dielectric layer thickness for insulation between the substrate of the optical device and waveguides for light signals having a low optical mode. The low confined waveguide region is coupled to the highly-confined waveguide region via a waveguide overlap and in some embodiments via an intermediary coupling waveguide.

Abstract: A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

Abstract: There is provided an opto-electric hybrid board with slight or no warpage. An opto-electric hybrid board according to the present disclosure includes an electric circuit board and an optical waveguide formed in a stacked manner on one surface of the electric circuit board. The optical waveguide includes an under cladding layer, cores for an optical path formed on a front surface of the under cladding layer, and over cladding layer formed on the front surface of the under cladding layer so as to cover the cores. A groove for prevention of warpage which has a bottom positioned below a top surface of the cores is formed at least in a front surface portion of the over cladding layer.

Abstract: A light steeling system and method for diffractive steering of electromagnetic radiation such as visible light is disclosed. Embodiments of the light steering system include leaky-mode SAW modulators as light modulator devices. The SAW modulators preferably include reflective diffractive gratings. The gratings are mounted to/patterned upon an exit face that opposes an exit surface of the SAW modulator, in one example. Steering of light signals emitted from the SAW modulators in these systems can be accomplished by varying wavelength of light signals introduced to the SAW modulators, and/or by varying frequency of RF drive signals applied to the SAW modulators. In addition, light field generators that incorporate SAW modulators of the proposed light steering system within displays of the light field generators are also disclosed.

Abstract: This disclosure provides a light source assembly and a display device, and the light source assembly includes: a first substrate and a second substrate arranged opposite to each other; a waveguide layer arranged between the first substrate and the second substrate; and a side-incident collimated light source arranged on a side of the waveguide layer, wherein the refractive index of the waveguide layer is higher than the refractive index of the first substrate, and the refractive index of the second substrate respectively; and light of the side-incident collimated light source is incident onto the side of the waveguide layer at a preset angle, and the incident light is totally reflected at the interference between the first substrate and the waveguide layer.

Abstract: A display device, including: a substrate; a first light-emitting element disposed on the substrate; an encapsulation layer disposed on the first light-emitting element; an input sensing layer disposed on the encapsulation layer; and a diffraction pattern layer disposed on the input sensing layer. The diffraction pattern layer may include a plurality of diffraction patterns arranged to have a first period in one direction.

Abstract: In one example embodiment, an optical circuit for optical modulation of light may include an input waveguide including a first thickness, an optical modulator including a second thickness, and a tapered transition that optically couples the optical modulator and the input waveguide. The second thickness may be smaller than the first thickness. The tapered transition may adiabatically transform the optical mode of the input waveguide to the optical modulator.

Abstract: Small form-factor, sensitive and efficient waveguide devices capable of nondispersive infrared gas or liquid sensing and photocatalysis are designed based on photonic integrated circuits. The devices comprise three-dimensional optical waveguiding structures and preferably integrated light sources and photodetectors. Since the length of the waveguide scales with the number of waveguiding layers, a plurality of layers is used to design high-sensitivity sensors and high-efficiency photocatalysis devices. In one embodiment, titanium dioxide absorbs ultraviolet light to generate an electron-hole pair which, in the presence of water and oxygen, generates radicals that react with and mineralize undesirable organic compounds, such as the lipid membranes that envelope and protect viruses such as Coronavirus Disease 2019 (COVID-19), allowing to pry apart the membranes and destroy the cells.

Abstract: There is provided a light emitting device which enables a color display with good color balance. A triplet compound is used for a light emitting layer of an EL element that emits red color, and a singlet compound is used for a light emitting layer of an EL element that emits green color and a light emitting layer of an EL element that emits blue color. Thus, an operation voltage of the EL element emitting red color may be made the same as the EL element emitting green color and the EL element emitting blue color. Accordingly, the color display with good color balance can be realized.

Abstract: An optical sheet for a backlight unit for guiding toward a front face side rays of light emitted by an LED light source. The optical sheet includes one or more resin layers. Ultrafine grooves oriented in specific directions are provided on a front face side or a back face side of at least one resin layer of the one or more resin layers. An average number of the ultrafine grooves per unit length in a direction perpendicular to an average orientation of the ultrafine grooves is preferably no less than 10/mm and no greater than 10,000/mm. A face of the at least one resin layer provided with the ultrafine grooves preferably has an arithmetic average roughness (Ra) in a direction perpendicular to an orientation of the ultrafine grooves being no less than 0.01 ?m and no greater than 5 ?m. Ultrafine grooves preferably constitute a diffraction grating.

Abstract: An optical communication device includes a support substrate, an optical waveguide, and a detector. The optical waveguide includes a first cladding layer that is formed on the support substrate, and is composed of silicon oxide or a material containing silicon oxide; a second cladding layer formed on the first cladding layer; and a core that is formed within the second cladding layer or between the first cladding layer and the second cladding layer, and is composed of silicon or a silicon-containing material. The detector contacts a part of the core, and is adapted to detect an intensity of light propagating through the core.

Abstract: The present disclosure relates to the field of automobile lamp technologies, and in particular, to a light source module based on a graded index lens, a lamp assembly including the light source module, and an automobile including the lamp assembly. The light source module includes a light source and a graded index lens disposed in front of the light source. Light emitted from the light source is incident to an incident surface of the graded index lens, and is emitted from an out-light surface of the graded index lens after being refracted and converged by using the graded index lens. The graded index lens converges the light emitted from the light source, so that the light has relatively large optical radioactive energy and a relatively small divergence angle on the out-light surface of the graded index lens.

Abstract: A lightguide includes features for extracting light that would otherwise be confined and propagate within the lightguide primarily by total internal reflection. A first portion of light propagating within the lightguide and extracted exits the lightguide through a first area of the lightguide having an optical reflectance of at least 30% and an optical transmittance of at least 5% for normally incident light at a wavelength of the extracted light. A second portion of light propagating within the lightguide and extracted exits the lightguide through a different second area of the lightguide having an optical transmittance of at least 80% for normally incident light at the wavelength of the extracted light.

Abstract: A photonic circuit integrated on a silicon-on-insulator waveguide, the silicon-on-insulator waveguide including a guiding layer, a cladding layer, and a substrate layer. The guiding layer having a first surface and a second surface, the second surface abutting one surface of the cladding layer, the cladding layer having another surface in abutment with a surface of the substrate layer, a photon pump in optical communication with the guiding layer, a nonlinear optical material in contact with the guiding layer first surface, a photon beam of the photon pump traversing the silicon-on-insulator waveguide, and the silicon-on-insulator waveguide having an output beam that includes a signal beam and an idler beam.