Abstract: Described herein is an integrated photonics device including a light emitter, integrated edge outcoupler(s), optics, and a detector array. The device can include a hermetically sealed enclosure. The hermetic seal can reduce the amount of moisture and/or contamination that may affect the measurement, analysis, and/or the function of the individual components within the sealed enclosure. Additionally or alternatively, the hermetic seal can be used to protect the components within the enclosure from environmental contamination induced during the manufacturing, packaging, and/or shipping process. The outcoupler(s) can be formed by creating one or more pockets in the layers of a die. Outcoupler material can be formed in the pocket and, optionally, subsequent layers can be deposited on top. The edge of the die can be polished until a targeted polish plane is achieved. Once the outcoupler is formed, the die can be flipped over and other components can be formed.

Abstract: A method for adjusting a transmission wavelength of signal light transmitted through an optical waveguide device provided with one or more optical waveguides through which the signal light having a wavelength of 1520 nm to 1560 nm and blue light having a wavelength of 375 nm to 455 nm pass, a groove through which the waveguide passes, and resin filled in the groove, including a step of passing the signal light and the blue light through the same or mutually different one or more optical waveguides and of passing the signal light and the blue light through the same or mutually different resin, the latter step changing a refractive index of the resin by irradiating the resin with the blue light so as to change the transmission wavelength of the signal light transmitted through the resin in accordance with a change in the refractive index of the resin.

Abstract: A packaging assembly and methodology provide a PCB substrate with one or more waveguide apertures and a conductive pattern which includes a plurality of landing pads that are disposed around peripheral edges of each waveguide aperture and that are connected to one another by trace lines so that, upon attachment and reflow of solder balls to the plurality of landing pads, the solder balls reflow along the trace lines to form a fully closed solder waveguide shielding wall disposed around peripheral edges of the first waveguide aperture.

Abstract: A device includes a dielectric layer, a plurality of grating structures, and a dielectric material between the plurality of grating structures and on top of the plurality of grating structures. The grating structures are arranged on the dielectric layer and separated from each other, the plurality of grating structures each having a bottom portion and top portion, the top portion having a first width and the bottom portion having a second width, the second width being larger than the first width.

Abstract: A device coupon for use in a hybrid integration process with a silicon platform. The device coupon comprises: an input waveguide, including an input facet; an active waveguide, coupled to the input waveguide, the active waveguide including a III-V semiconductor based electro-optical device; and an output waveguide, configured to couple light between the active waveguide and an output facet. The input waveguide and output waveguide are passive waveguides.

Abstract: An optical probe package structure is provided, used in a test environment for testing a plurality of optical chips on a wafer, including: a main body, an optical fiber, an optical fiber positioning area, a mode field conversion waveguide structure, and an optical waveguide. Wherein, the mode field conversion waveguide structure is used to convert the propagation field of the optical signal, and the optical signal transmitted by the mode field conversion waveguide structure enters the optical waveguide. The optical waveguide has an emitting end, and the emitting end is provided with a facet, the facet has a facet angle, and the facet angle makes the optical signal after field conversion mode field conversion to produce total reflection and output along a second direction. The optical signal after total reflection enters the optical chips. Thereby, an optical probe package structure that can test before wafer cutting and polishing is provided.

Abstract: The present disclosure relates to optical phase modulation devices. The optical phase modulation devices may include a heater resistance which induces a phase change and control systems and methods of controlling the induced phase change.

Abstract: An assembly of an active semiconductor component and of a silicon-based passive optical component includes a carrier; and the active semiconductor component and the passive optical component both arranged on the carrier. The active semiconductor component includes a first set of semiconductor layers comprising at least one first waveguide configured to guide, in a first section of the assembly, at least one first optical mode; a second set of semiconductor layers, the set being superposed and making contact with the first set of layers, and including at least one second waveguide configured to guide at least one second optical mode. At least some of the layers of the first set of layers and of the second set of layers are doped to form, in a first region of the component, a PIN diode. The at least one first waveguide and the at least one second waveguide are configured to allow evanescent coupling therebetween, in a second section of the assembly.

Abstract: A photoelectric fiber includes a fiber including a core through which light is guided; an electrical unit formed continuously with the fiber, the electrical unit being configured to house a photoelectric conversion chip including a photoelectric conversion element; and an external electrode formed on a front surface of at least one of the fiber or the electrical unit, wherein the photoelectric conversion chip is optically connected to the core and electrically connected to the external electrode.

Abstract: An optoelectronic package structure is provided. The optoelectronic package includes a carrier, an electronic component, a photonic component and a first power supply path in the carrier. The carrier includes a first region and the electronic component is disposed over the first region of the carrier. A first power supply path is electrically connects the electronic component.

Abstract: A multi-chip photonic assembly includes first and second photonic integrated circuits having first and second waveguides vertically stacked such that first vertical dimensions of the first and second waveguides occupy different horizontal planes in the stack. At least one of the first and second waveguides has a region that has a second vertical dimension that is larger than the first vertical dimension and either horizontally overlaps the other waveguide and/or vertically contacts the other waveguide. Light moving through one of the waveguides from the first vertical dimension to the other vertical dimension changes modes vertically so that the light moves from one waveguide to the other.

Abstract: Photonic ring modulators with high tuning efficiency and small footprint can be formed in a hybrid material platform from a silicon bus waveguide vertically coupled to an optically active compound semiconductor (e.g., III-V) ring resonator. The performance of the modulator, e.g., in terms of the tuning efficiency and the maximum insertion loss, may be optimized by suitable levels of an applied bias voltage and a heater power of a heater optionally included in the ring modulator. The disclosed hybrid photonic ring modulators may be used, e.g., in photonic transceiver circuits with high lane count.

Abstract: An apparatus includes a substrate that includes one or more routing layers, and an optical module coupled to the substrate. The optical module includes a photonic integrated circuit (PIC) and electronic integrated circuit (EIC), wherein the photonic integrated circuit is at least partially embedded within the substrate. The apparatus further includes a fiber optic coupler coupled to at least one of the substrate or PIC, wherein the PIC is configured to transmit or receive an optical signal via the fiber optic coupler.

Abstract: A photonic integrated circuit including an InP-based substrate that is provided with a first InP-based optical waveguide and a neighboring second InP-based optical waveguide, a dielectric planarization layer that is arranged at least between the first optical waveguide and the second optical waveguide. At least between the first optical waveguide and the neighboring second optical waveguide, the dielectric planarization layer is provided with a recess that is arranged to reduce or prevent optical interaction between the first optical waveguide and the second optical waveguide via the dielectric planarization layer. At the location of the recess, the dielectric planarization layer has a first sidewall that is arranged sloped towards the first optical waveguide, and a second sidewall that is arranged sloped towards the second optical waveguide. An opto-electronic system including said PIC.

Abstract: A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.

Abstract: A photonic device includes a silicon layer, wherein the silicon layer extends from a waveguide region of the photonic device to a device region of the photonic device, and the silicon layer includes a waveguide portion in the waveguide region. The photonic device further includes a cladding layer over the waveguide portion, wherein the device region is free of the cladding layer. The photonic device further includes a low refractive index layer in direct contact with the cladding layer, wherein the low refractive index layer comprises silicon oxide, silicon carbide, silicon oxynitride, silicon carbon oxynitride, aluminum oxide or hafnium oxide. The photonic device further includes an interconnect structure over the low refractive index layer.

Abstract: Provided is a planar lightwave circuit in which stress on a substrate is reduced to decrease the curve of the substrate. The planar lightwave circuit is formed by layering a glass film on the substrate. When the optical axis direction from an input waveguide toward an output waveguide is in the longitudinal direction of the substrate, a plurality of grooves are formed in a line in the transverse direction of the substrate.

Abstract: A monolithic InP-based PIC having a first photonic assembly that has a first optical splitter-combiner unit having a first end part that is optically connected with a first optical waveguide and a second end part that is optically connected with a first main photonic circuit and a first auxiliary photonic circuit. The first auxiliary photonic circuit has a first laser unit, and a first SOA. The first SOA is configurable to be in a first operational state in which the first SOA allows optical communication between the first laser unit and the first optical splitter-combiner unit, or a second operational state in which the first SOA prevents optical communication between the first laser unit and the first optical splitter-combiner unit. An opto-electronic system including the PIC.

Abstract: A photonic chip and a preparation method thereof are provided. The chip includes a lithium niobate film modulator array, a first optical coupling array, and a silica waveguide wavelength-division multiplexer, and the lithium niobate film modulator array includes one or more lithium niobate film modulators and is used to modulate an optical signal; the first optical coupling array includes one or more first optical coupling structures, and the first optical coupling structure has one end connected to a corresponding lithium niobate thin film modulator and the other end connected to the silica waveguide wavelength-division multiplexer so as to transmit the modulated optical signal to the silica waveguide wavelength-division multiplexer; and the silica waveguide wavelength-division multiplexer is used to perform wavelength-division multiplexing on the modulated optical signal.

Abstract: Embodiments include a photonic device with a compensation structure. The photonic device includes a waveguide with a refractive index which changes according to the thermo-optic effect as a temperature of the photonic device fluctuates. The compensation structure is positioned on the photonic device to counteract or otherwise alter the thermo-optic effect on the refractive index of the waveguide in order to prevent malfunctions of the photonic device.

Abstract: Electro-optic modulation of multiple phase modulator waveguides with a single electrode is made possible by determining places of equal electric field strength. Substrate extensions support edges of a wide hot electrode and ground electrodes equally spaced from the wide hot electrodes. Waveguides are positioned in the extensions separated from the electrodes by buffer layers. A wide microstrip hot electrode on a buffer layer, wider substrate and ground has multiple waveguides in the substrate below the buffer layer. A thinned substrate has a microstrip hot electrode and spaced coplanar grounds with multiple waveguides located on both sides. Decreasing substrate thickness flattens the electric field strength between the electrodes and allows multiple waveguides located between the central hot and outer ground electrodes. Adjacent waveguides with different asymmetric waveguide index portion staged along their length eliminate cross talk.

Abstract: Disclosed is a structure including a first waveguide core with a first end portion and a second waveguide core with a second end portion, which overlays and is physically separated from the first end portion. The structure includes a coupler configured for interlayer waveguide coupling. Specifically, the coupler includes an additional waveguide core stacked vertically between and physically separated from the first end portion and the second end portion. Optionally, the coupler includes multiple additional waveguide cores. The shapes of the various waveguide cores are configured in order to achieve mode matching so that optical signals pass between the first end portion of the first waveguide core and the second end portion of the second waveguide core through each additional waveguide core in sequence. Also disclosed is a structure including a crossing array implemented using couplers.

Abstract: A optical modulator with reduced with a reduced amount of ripple is provided. A Mach-Zehnder optical modulator includes a phase modulation unit including optical waveguides having a PN junction structure and traveling wave electrodes, and a dummy phase modulation unit including portions of the traveling wave electrodes, the portions being obtained by forming the respective traveling wave electrodes longer than the phase modulation unit in the light propagation direction of the phase modulation unit, and optical waveguides having the same PN junction structure as that of the optical waveguides of the phase modulation unit and not connected to the optical waveguides of the phase modulation unit.

Abstract: The present disclosure relates to electro-optic modulators that include caps for optical confinement. One example embodiment includes an electro-optic modulator. The electro-optic modulator includes a first cladding layer. The electro-optic modulator also includes a second cladding layer. In addition, the electro-optic modulator includes a first waveguide. The first waveguide is at least partially encapsulated between the first cladding layer and the second cladding layer. Further, the electro-optic modulator includes a thin-film lithium niobate layer adjacent to the second cladding layer. The thin-film lithium niobate layer is on an opposite side of the second cladding layer from the first waveguide. Additionally, the electro-optic modulator includes a first cap positioned on an opposite side of the thin-film lithium niobate layer from the second cladding layer. The first cap enhances optical confinement within the thin-film lithium niobate layer.

Abstract: A cable assembly may include a first end and a second end. The first end may include a first breakout including a plurality of transmissive conduits implementing a plurality of communications channels and a second breakout including a plurality of conduits implementing a plurality of communications channels. The second end may include a third breakout including a plurality of conduits implementing a plurality of communications channels and a fourth breakout including a plurality of conduits implementing a plurality of communications channels. Communication channels of the first breakout, second breakout, third breakout, and fourth breakout may be arranged such that the first breakout shares a first communications channel with the third breakout, the first breakout shares a second communications channel with the fourth breakout, the second breakout shares a third communications channel with the third breakout, and the second breakout shares a fourth communications channel with the fourth breakout.

Abstract: A photo receiver includes a photo detector including a semiconductor substrate having a first main surface and a second main surface and a metal pattern layer provided on the second main surface; and a carrier including a supporting substrate having a third main surface facing the second main surface and a solder pattern layer provided on the third main surface. The solder pattern layer is bonded to the metal pattern layer. The first main surface is provided with a variable optical attenuator, an optical 90-degree hybrid device, and a plurality of photodiodes optically coupled to the variable optical attenuator via the optical 90-degree hybrid device. The solder pattern layer and the metal pattern layer are located in a peripheral area surrounding a central area where the variable optical attenuator and the optical 90-degree hybrid device are located when viewed in the normal direction of the first main surface.

Abstract: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.

Abstract: Matrix multiplication process is segregated between two separate dies—a memory die and a compute die to achieve low latency and high bandwidth artificial intelligence (AI) processor. The blocked matrix-multiplication scheme maps computations across multiple processor elements (PE) or matrix-multiplication units. The AI architecture for inference and training includes one or more PEs, where each PE includes memory (e.g., ferroelectric (FE) memory, FE-RAM, SRAM, DRAM, MRAM, etc.) to store weights and input/output I/O data. Each PE also includes a ring or mesh interconnect network to couple the PEs for fast access of information.

Abstract: The disclosure belongs to the technical field of photoelectric emission in semiconductors, and discloses an electro-absorption modulated laser chip and a fabrication method thereof, which can solve the problems of signal distortion caused by optical crosstalk between components in an existing electro-absorption modulated laser (EML) integrated with a semiconductor optical amplifier (SOA), and failure in longer-distance transmission.

Abstract: Structures for a cavity included in a photonics chip and methods of fabricating a structure for a cavity included in a photonics chip. The structure includes a substrate, a back-end-of-line stack having interlayer dielectric layers on the substrate, and a cavity penetrating through the back-end-of-line stack and into the substrate. The cavity includes first sidewalls and second sidewalls, and the second sidewalls have an alternating arrangement with the first sidewalls to define non-right-angle corners.

Abstract: Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a waveguide core and a back-end-of-line stack including a first metallization level, a second metallization level, and a heat sink having a metal feature in the second metallization level. The heat sink is positioned adjacent to a section of the waveguide core. The first metallization level including a dielectric layer positioned between the metal feature and the section of the waveguide core.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

Abstract: A photonic integrated circuit (PIC) assembly comprising a semiconductor optical amplifier (SOA) array and a U-turn chip. The SOA array includes an input SOA and a plurality of SOAs. The input SOA and the plurality of SOAs are arranged parallel to one another. The U-turn chip includes an optical splitter and a waveguide assembly. The optical splitter is configured to receive amplified input light propagating in a first direction from the input SOA, and divide the amplified light into beams. The waveguide assembly guides the beams to a corresponding SOA of the plurality of SOAs, and adjusts a direction of prorogation of each of the guided beams to be substantially parallel to a second direction that is substantially opposite the first direction.

Abstract: A semiconductor package structure includes a first semiconductor die having an active surface and a passive surface opposite to the active surface, a conductive element leveled with the first semiconductor die, a first redistribution layer (RDL) being closer to the passive surface than to the active surface, a second RDL being closer to the active surface than to the passive surface, and a second semiconductor die over the second RDL and electrically coupled to the first semiconductor die through the second RDL. A first conductive path is established among the first RDL, the conductive element, the second RDL, and the active surface of the first semiconductor die.

Abstract: An example photonic integrated circuit includes a transmitter circuit with a optical communication path to an optical coupler configured to couple with an optical fiber. The optical communication path has a propagation direction away from the transmitter circuit and towards the optical coupler. A counter-propagating tap diverts light sent by a light source backward against the propagation direction of the optical communication path. A photodiode receives the diverted light and measures its power level. The photodiode generates a feedback signal for the optical coupler and provides the feedback signal to the optical coupler. The optical coupler receives the feedback signal and adjusts a coupling alignment of the optical communication path to the optical fiber based on the feedback signal, which indicates the measured power level of the diverted counter-propagating light.

Abstract: A method of fabricating a device coupon including a waveguide which is suitable for use in a micro-transfer printing process. The method comprises the steps, on a wafer, of: depositing a lower cladding layer on an uppermost surface of the wafer; providing a silicon nitride guiding layer on an uppermost surface of the lower cladding; depositing an upper cladding over at least an uppermost surface of the silicon nitride guiding layer; providing a tether over the coupon, and etching away a region of the uppermost layer of the wafer located between the lower cladding layer and a substrate of the wafer, thereby leaving the lower cladding layer, silicon nitride guiding layer, and upper cladding layer suspended above the wafer via the tether.

Abstract: Structures for an edge coupler and methods of fabricating such structures. The structure includes a substrate, a waveguide core, and a metamaterial layer positioned in a vertical direction between the substrate and the waveguide core. The metamaterial layer includes a plurality of elements separated by a plurality of gaps and a dielectric material in the plurality of gaps.

Abstract: Some embodiments of the disclosure provide a demodulation system for obtaining phase change parameters by a fiber-optic Fabry Perot sensor. In an embodiment, the demodulation system includes a transmitting module, a fiber-optic Fabry Perot sensor, a light splitting module, a filter module, a receiving module, and a processing module. The transmitting module transmits a beam with a predetermined wavelength range. The fiber-optic Fabry Perot sensor receives the beam and forms a reflected light beam. The light splitting module is arranged between the transmitting module and the fiber-optic Fabry Perot sensor. The filter module obtains the first light beam, the second light beam, and the third light beam. The filter module has a broadband filter. The receiving module receives the first light beam, the second light beam, and the third light beam and converts them into the first signal, the second signal, and the third signal.

Abstract: A device for attaching at least one optical fiber to a chip includes at least one nanowaveguide disposed on a substrate of a chip to be attached to an at least one off-chip fiber respectively. At least one oxide taper mode converter is disposed around a nanowaveguide end and in optical communication with and modally coupled to each of the at least one nanowaveguide respectively, and adapted such that each corresponding fiber of at least one off-chip fiber corresponds to a cleaved fiber end each cleaved fiber end to be fused to each oxide taper mode converter respectively to optically couple and mode match each cleaved fiber end to each of the nanowaveguide ends of each of the at least one nanowaveguide via the oxide taper mode converter by a modal coupling. A method for attaching at least one optical fiber to a chip is also described.

Abstract: An optical modulator includes a dielectric layer and a waveguide. The waveguide is disposed on the dielectric layer. The waveguide includes an electrical coupling portion, a slab portion, and an optical coupling portion. The slab portion is directly in contact with both of the electrical coupling portion and the optical coupling portion. The slab portion has a first sub-portion and a second sub-portion connected to the first sub-portion. A top surface of the electrical coupling portion, a top surface of the first sub-portion, and a top surface of the second sub-portion are located at different level heights.

Abstract: An apparatus for facilitating electromagnetic wave resonator tuning is disclosed, including first, second, and third spaced apart resonator portions, the second portion disposed between the first and third to form an electromagnetic wave resonator having a resonant frequency, wherein the first and second portions define a first volume therebetween and the second and third define a second volume therebetween, a first actuator coupled to the first portion, the second, or both, the first actuator configured to adjust a width of the first volume, and a second actuator coupled to the second portion, the third, or both, the second actuator configured to adjust a width of the second volume, wherein the actuators are configured to decrease the widths of the first and second volumes or increase the widths of the first and second volumes to adjust the resonant frequency of the resonator. Other apparatuses, methods, and systems are also disclosed.

Abstract: A photonic component having a photonically integrated chip and a fibre mounting, wherein the fibre mounting has: at least one groove, into which an optical fibre is placed, and at least one mirror surface, which reflects radiation from the fibre in the direction of the photonically integrated chip and/or reflects radiation from the photonically integrated chip in the direction of the fibre. A chip stack comprising at least two chips is arranged between the photonically integrated chip and the fibre mounting, the chip stack has at least two through holes and in each case a guide pin, which positions the chip stack and the fibre mounting relative to one another, passes through the at least two through holes of the chip stack.

Abstract: A Semiconductor device includes an insulating layer, an optical waveguide, a first dummy semiconductor film, a second semiconductor film and a third semiconductor film. The optical waveguide is formed on the insulating layer. The first dummy semiconductor film is formed on the insulating layer and is spaced apart from the optical waveguide. The first dummy semiconductor film is formed on the first semiconductor film. The second semiconductor film is integrally formed with the optical waveguide as a single member on the insulating layer. The third semiconductor film is formed on the second semiconductor film. A material of the first dummy semiconductor film is different from a material of the optical waveguide. In plan view, a distance between the optical waveguide and the first dummy semiconductor film in a first direction perpendicular to an extending direction of the optical waveguide is greater than a thickness of the insulating layer.

Abstract: Embodiments herein describe an optical system that includes a photonic integrated circuit (PIC) bonded to a package containing an electrical integrated circuit (EIC). However, this bond can prevent an edge coupler from optically aligning an optical fiber to an edge of the PIC in order to transfer optical signals. To provide room for the edge coupler, the PIC is arranged to overhang the package containing the EIC so that the package does not interfere with the ability of the edge coupler to align with the side or edge of the PIC. In this manner, an optical fiber can be optically aligned (e.g., butt coupled) to the edge of the PIC rather than having to use a grating coupler or some other less efficient optical coupling in order to transfer optical signals between the PIC and the optical fiber.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a waveguide on a first side of the substrate. The semiconductor device further includes a photodetector (PD) on a second side of the substrate, opposite the first side of the substrate. The semiconductor device further includes an optical through via (OTV) optically connecting the PD with the waveguide, wherein the OTV extends through the substrate from the first side of the substrate to the second side of the substrate.

Abstract: Disclosed is a self-coherent receiver based on single delay interferometer, comprising a first beam splitter, a first circulator, a second circulator, a double path bidirectional multiplexing delay interferometer, a first balanced detector, a second balanced detector and an electrical signal processing module.

Abstract: In an example embodiment, a system includes a first grating-coupled laser (GCL) that includes a first laser cavity optically coupled to a first transmit grating coupler configured to redirect horizontally-propagating first light, received from the first laser cavity, vertically downward and out of the first GCL. The system also includes a second GCL that includes a second laser cavity optically coupled to a second transmit grating coupler configured to transmit second light vertically downward and out of the second GCL. The system also includes a photonic integrated circuit (PIC) that includes a first receive grating coupler optically coupled to a first waveguide and configured to receive the first light and couple the first light into the first waveguide. The PIC also includes a second receive grating coupler optically coupled to a second waveguide and configured to receive the second light and couple the second light into the second waveguide.

Abstract: Disclosed is a photonic integrated circuit (PIC) structure including: a first waveguide with a first main body and a first end portion, which is tapered; and a second waveguide with a second main body and a second end portion, which has two branch waveguides that are positioned adjacent to opposing sides, respectively, of the first end portion of the first waveguide and that branch out from the second main body, thereby forming a V, U or similar shape. The arrangement of the two branch waveguides of the second end portion of the second waveguide relative to the tapered first end portion of the first waveguide allows for mode matching conditions to be met at multiple locations at the interface between the waveguides, thereby creating multiple signal paths between the waveguides and effectively reducing the light signal power density along any one path to prevent or at least minimize any power-induced damage.

Abstract: An interconnect system includes various anti-backout latches that are movable between an engaged position and a disengaged position. When in the engaged position, the anti-backout latches can be configured to prevent an interconnect module, such as an optical transceiver, from becoming unmated from a host module. When in the disengaged position, the anti-backout latches permit the interconnect module to become unmated from a host module. Securement members are also disclosed that secure a heat sink to a module housing of the interconnect module.

Abstract: The present invention relates to an optical component and a transparent sealing member. An optical component has: at least one optical element; and a package that houses therein the optical element. The package has: a mounting board on which the optical element is mounted; a transparent sealing member bonded on the mounting board; a recessed section surrounding the optical element mounted on the mounting board; and a refractive index matching agent applied to the inside of the recessed section. The package has at least one groove in communication with the outside from the recessed section.