Abstract: An optical transmission device includes a semiconductor laser chip in which a semiconductor laser array having a plurality of distributed feedback semiconductor lasers formed on a first semiconductor substrate is formed, a semiconductor waveguide chip in which a semiconductor modulator array formed on a second semiconductor substrate and having the same number of semiconductor modulators as the semiconductor lasers is formed. In the optical transmission device, a waveguide and a waveguide are butt-joined such that a distance between an end face of the waveguide on a side to the semiconductor modulator array in each of the semiconductor lasers of the semiconductor laser array and an end face of the waveguide on a side to the semiconductor laser array in each of the semiconductor modulators of the semiconductor modulator array is 10 ?m or less.

Abstract: One example LIDAR device comprises a substrate and a waveguide disposed on the substrate. A first section of the waveguide extends lengthwise on the substrate in a first direction. A second section of the waveguide extends lengthwise on the substrate in a second direction different than the first direction. A third section of the waveguide extends lengthwise on the substrate in a third direction different than the second direction. The second section extends lengthwise between the first section and the second section. The LIDAR device also comprises a light emitter configured to emit light. The waveguide is configured to guide the light inside the first section toward the second section, inside the second section toward the third section, and inside the third section away from the second section.

Abstract: A tunable laser that includes an array of parallel optical amplifiers is described. The laser may also include an intracavity N×M coupler that couples power between a cavity mirror and the array of parallel optical amplifiers. Phase adjusters in optical paths between the N×M coupler and the optical amplifiers can be used to adjust an amount of power output from M?1 ports of the N×M coupler. A tunable wavelength filter is incorporated in the laser cavity to select a lasing wavelength.

Abstract: A method of transfer printing. The method comprising: providing a precursor photonic device, comprising a substrate and a bonding region, wherein the precursor photonic device includes one or more alignment marks located in or adjacent to the bonding region; providing a transfer die, said transfer die including one or more alignment marks; aligning the one or more alignment marks of the precursor photonic device with the one or more alignment marks of the transfer die; and bonding at least a part of the transfer die to the bonding region.

Abstract: A connector assembly arrangement comprising, disposed on the faces of a circuit board in an electronic device, connector assemblies which, along with having a plug connector that incorporates a photoelectric conversion element capable of converting optical signals and electrical signals from one to the other and a receptacle connector with which said plug connector is mated, have the plug connector and the receptacle connector electrically connected through mutual contact between terminals; wherein the plug connector, from which a fiber optic cable for optical signal transmission that is connected to the photoelectric conversion element extends in one direction from said plug connector, also has terminals connected to the above-mentioned photoelectric conversion element; the fiber optic cable is a single fiber optic cable; and a plurality of connector assemblies are disposed on at least one of the two faces of the circuit board.

Abstract: By determining an alignment point for a photonic element in a substrate of a given material; applying, via a laser aligned with the photonic element according to the alignment point, an etching pattern to the photonic element to produce a patterned region and an un-patterned region in the photonic element, wherein applying the etching pattern alters a chemical bond in the given material for the patterned region of the photonic element that increases a reactivity of the given material to an etchant relative to a reactivity of the un-patterned region, and wherein the patterned region defines an engagement feature in the un-patterned region that is configured to engage with a mating feature on a Photonic Integrated Circuit (PIC); and removing the patterned region from the photonic element via the etchant, various systems and methods may make use of laser patterning in optical components to enable alignment of optics to chips.

Abstract: An integrated optical transceiver includes a transmitter unit and a receiver unit each provided on a surface region of a substrate member. The transmitter unit includes four laser devices configured to output four laser lights and a set of four power splitter devices coupled to the four laser lights to split each of the four laser lights to two replicated transmit paths. The receiver unit has two replicated receive paths each including a photodetector device and a transimpedance amplifier device coupled to the photodetector device. A planar light circuit block is mounted on the substrate member and includes a multiplexer device configured to couple the four laser lights of the transmitter unit and multiplex to one output light delivered to an optical output port and a demultiplexer device configured to receive an input light from an optical input port and demultiplex to four input optical signals for the receiver unit.

Abstract: According to embodiments of the present invention, an optical modulator is provided. The optical modulator includes a substrate, and a waveguiding arrangement on the substrate, the waveguiding arrangement having a waveguide, and at least one graphene layer arranged to interact with light propagating in the waveguiding arrangement, wherein the waveguide is designed such that the light interacting with the at least one graphene layer has a maximum intensity overlapping with the at least one graphene layer. According to further embodiments of the present invention, a method for forming the optical modulator, and a method for controlling the optical modulator are also provided.

Abstract: A semiconductor package includes a first semiconductor chip including a first surface and a second surface which face each other, an alignment pattern formed on the first surface, a first redistribution layer arranged on the first surface of the first semiconductor chip, a second redistribution layer arranged on the second surface of the first semiconductor chip, and electrically connected with the semiconductor chip, and a first dielectric layer including the alignment pattern between the first redistribution layer and the semiconductor chip, the alignment pattern overlapping the first surface of the first semiconductor chip.

Abstract: Methods of manufacturing light-emitting devices are described herein. A method includes obtaining a packaging substrate. The packaging substrate includes an embedded metal inlay, vias in the packaging substrate and contacts on a bottom surface of the packaging substrate, each electrically coupled to a respective one of the vias. The method also includes forming a hybridized device, attaching a bottom surface of the hybridized device to a top surface of the metal inlay, and wirebonding a top surface of the hybridized device to a stop surface of the packaging substrate using a plurality of conductive connectors.

Abstract: A semiconductor package includes a redistribution layer, a semiconductor chip on the redistribution layer, and a molding layer covering a sidewall of the semiconductor chip and a top surface and a sidewall of the redistribution layer. The sidewall of the redistribution layer is inclined with respect to a bottom surface of the redistribution layer, and a sidewall of the molding layer is spaced apart from the sidewall of the redistribution layer.

Abstract: The present invention relates to a simple data transmission protocol and a data receiving device (10, 10?, 10?, 10??) for a power over Ethernet system (100?) using the simple data transmission protocol. The device (10, 10?, 10?, 10??) comprises a port and a simple logic unit. The port is configured for receiving power and data transmitted to the device (10, 10?, 10?, 10??) via an Ethernet connection (16?). The simple logic unit is configured to decode data encoded in a characteristic of one or more data packets received at the port. The data can be encoded in data packet length, data packet duration, number of data packets in a predetermined interval, and/or sequence of data packets. The simple data transmission protocol can reduce power consumption as in contrast to the Ethernet protocol MAC does not need to be decoded for information transfer. Hence only simple logic functions are required.

Abstract: An optic reference signal generator comprising a housing forming an enclosed space with one or more air flow openings. Within the housing is an optic signal generator driver configured to generate an optic signal generator drive signal. An optic signal generator generates an optic signal responsive to the optic signal generator drive signal. A polarity control unit adjusts polarization of the optic signal to create a polarization adjusted optic signal and a modulator bias generator and controller generates a modulation signal. A pattern signal input receives a pattern signal and a modulator receives the polarization adjusted optic signal, the pattern signal, and the modulation signal to generate a modulated output signal.

Abstract: A method for manufacturing a monolithically integrated semiconductor optical integrated element comprising a DFB laser, an EA modulator, and a SOA disposed in a light emitting direction, comprising the step of forming a semiconductor wafer on which the elements are two-dimensionally arrayed and aligned the optical axes; cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the elements adjacent to each other share an identical cleavage end face as a light emission surface; inspecting the semiconductor bar by driving the SOA and the DFB laser through a connection wiring part together; and separating out the semiconductor bar after the inspection to cut the connection wiring part connecting the electrode of the SOA and the DFB laser to isolate from each other.

Abstract: Disclosed herein are techniques, methods, structures and apparatus that provide a silicon photonics multicarrier optical transceiver wherein both the transmitter and receiver are integrated on a single silicon chip and which generates a plurality of carriers through the effect of an on-chip modulator, amplifies the optical power of the carriers through the effect of an off-chip amplifier, and generates M orthogonal sets of carriers through the effect of an on-chip basis former.

Abstract: An integrated optical polarizer for generating linear polarizing light may be formed in a photonic integrated circuit (PIC) for applications that require stable output state of polarization. The integrated polarizer may be built by using the same materials already present in the PIC without use of other additional layers and claddings, and without other additional structural modification to the waveguide profile. The integrated polarizer comprises a plurality of bending waveguides of a pre-determined radius that are connected to each other in sequence. The bending waveguide has a high birefringence and a loose confinement to conduct one polarization mode and attenuate the other polarization mode. The polarization discrimination is controlled with the degree of the mode confinement, the bending radius, and the number of the bending waveguides that are connected in series.

Abstract: It is an object of this invention to provide an optical waveguide, an optical concentration measuring device, and a method for manufacturing an optical waveguide capable of achieving an improvement of evanescent wave exuding efficiency of propagating light and light extraction efficiency. A core layer provided in an optical waveguide has a first portion having a first film thickness, a second portion having a second film thickness different from the first film thickness, and a third portion connecting the first portion and the second portion. The third portion is formed so that the film thickness is gradually increased from the second portion having the smaller film thickness toward the first portion having the larger film thickness between the first portion and the second portion, and the maximum inclination angle is 10° or more and 45° or less.

Abstract: A fiber array device configured to secure and align one or more optical fiber bundles as part of a main body using a fixing material. The fixing material is light cured or room temperature cured. Main body forms an angle from a first direction along a second direction, and a recess the optical bundles are laid within and in which the fixing material is applied. Each individual optical fiber is laid within a groove formed in a lid, the base portion or both the lid and the base portion. The fiber array device is secured to a printed circuit board to form a communication path between the optical fiber and electronics of the board.

Abstract: The present disclosure describes techniques for altering the epoxy wettability of a surface of a MEMS device. Particularly applicable to flip-chip bonding arrangements in which a top surface of a MEMS device is adhered to a package substrate. A barrier region is provided on a top surface of the MEMs device, laterally outside a region which forms, or overlies, the backplate and/or the cavity in the transducer substrate. The barrier region comprises a plurality of discontinuities, e.g. dimples, which inhibit the flow of epoxy.

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

Abstract: A system including an optical engine. In some embodiments, the system includes an integrated circuit in a first-level package, and the system includes the optical engine, in the first-level package, and the optical engine includes an electro-optical chip.

Abstract: There is provided a 2-stage moving average filter for a navigation device including a delta regulator and an N-taps average circuit. The delta regulator is used as a first stage to receive motion delta at a varied frequency, and combine or split the received motion delta to output a regulated motion delta at a fixed frequency. The N-taps average circuit receives and averages N regulated motion delta and outputs the averaged motion delta at a fixed frequency.

Abstract: Example embodiments relate to imaging devices for in-line holographic imaging of objects. One embodiment includes an imaging device for in-line holographic imaging of an object. The imaging device includes a set of light sources configured to output light in confined illumination cones. The imaging device also includes an image sensor that includes a set of light-detecting elements. The set of light sources are configured to output light such that the confined illumination cones are arranged side-by-side and illuminate a specific part of the object. The image sensor is arranged such that the light-detecting elements detect a plurality of interference patterns. Each interference pattern is formed by diffracted light from the object originating from a single light source and undiffracted light from the same single light source. At least a subset of the set of light-detecting elements is arranged to detect light relating to not more than one interference pattern.

Abstract: A fingerprint recognition device, a recognition device and a display device are provided to include: a light guiding layer and a plurality of recognizer units, on a side of a light transmission substrate. Each recognizer unit includes: a first optical grating which is between the light guiding layer and the light transmission substrate and is configured to diffractively couple a fingerprint light ray having an incident angle within a preset angle range to the light guiding layer; a second optical grating on a side of the light guiding layer; and a detector module on a side of the second optical grating away from the light guiding layer. The second optical grating is configured to extract the fingerprint light ray in the light guiding layer to the detector module, and the detector module is configured to detect a light intensity of the fingerprint light ray.

Abstract: Embodiments include a multimode interference (MMI) device with offset facets. The MMI device includes a first set of facets positioned on opposite edges of the MMI device with an optical path between the set of facets. The MMI device also includes a second set of facets positioned on opposite edges of the MMI device, where the second set of facets are offset from the first set of facets, where a second optical path passes through the MMI device between the second set of facets.

Abstract: A system may include a wafer that includes ICs and defines cavities. Each cavity may be formed in a BEOL layer of the wafer and proximate a different IC. The system may also include an interposer that includes a transparent layer configured to permit optical signals to pass through. The interposer may also include at least one waveguide located proximate the transparent layer. The at least one waveguide may be configured to adiabatically couple at least one optical signal out of the multiple ICs. Further, the interposer may include a redirecting element optically coupled to the at least one the waveguide. The redirecting element may be located proximate the transparent layer and may be configured to receive the at least one optical signal from the at least one waveguide. The redirecting element may also be configured to vertically redirect the at least one optical signal towards the transparent layer.

Abstract: A method, a non-transitory computer readable medium and a detection system for detecting an electric arc hazard related to a wafer. The detection system may include a measurement unit, an electrode and a processing unit. The measurement unit may be configured to provide a measurement result by measuring an electrical parameter of the electrode during a test period, while the wafer may be moved in relation to the electrode, and while a certain electrical field may be formed between the electrode and the wafer; wherein the certain electrical field induces detached ends of partially detached conductive elements of the wafer to move away from the wafer. The processing unit may be configured to determine an existence of the electric arc hazard based on the measurement result.

Abstract: In general, a temperature control device for use in laser assemblies and optical subassemblies is disclosed that includes at least two electrically conductive terminals to enable flexible electrical coupling to associated components, e.g., monitor photodiodes and laser diodes, and accommodate a range of laser assembly configurations without the necessity of supplying a negative voltage rail. In more detail, a temperature control device consistent with the present disclosure includes a bottom plate, a top plate, and a plurality of semiconductor elements disposed therebetween. The top plate includes a component mounting surface that provides at least a first and second electrically conductive terminal/pad. The first and second electrically conductive terminals/pads can be electrically isolated, e.g., via a gap, and configured to provide first and second voltage potentials respectively.

Abstract: A laser mount assembly includes a lens holder including a collimating lens. A laser subassembly is positioned adjacent the lens holder and includes a vertical-cavity surface-emitting laser, a thermal electric cooler, and a thermistor. A printed circuit board is positioned adjacent the laser subassembly and includes a plurality of heating components. The heating components heat the area between the lens holder and the laser subassembly.

Abstract: An optical integrated element includes: a substrate; a first waveguide region in which a lower cladding layer, a first core layer, and an upper cladding layer are sequentially laminated in this order on the substrate; and an active region in which the lower cladding layer, a second core layer, a quantum well layer that amplifies light when a current is injected, and the upper cladding layer are sequentially laminated on the substrate. Further, the second core layer and the quantum well layer are close to each other within a range of a mode field of light guided in the second core layer, and the first core layer is butt-jointed to the second core layer and the quantum well layer.

Abstract: A Mach-Zehnder modulator is enabled to perform high-speed modulation operation by reducing RF loss of a high-frequency wiring formed on an optical waveguide without deteriorating optical characteristics of branching and multiplexing optical circuits.

Abstract: An optical coupler includes a first waveguide including a first multi-mode waveguide section having a cross-section characterized by a first height and a first width that is greater than the first height and a second waveguide including a second multi-mode waveguide section having a cross-section characterized by a second height and a second width that is greater than the second height. The first multi-mode waveguide section is positioned adjacent to the second multi-mode waveguide section at least partially above or below the second multi-mode waveguide so that light entering the first multi-mode waveguide section is coupled from the first multi-mode waveguide section to the second multi-mode waveguide section. Methods for coupling light between waveguides with the optical coupler and optical devices that include the optical coupler are also described.

Abstract: A laser element includes a transparent substrate, a conductive layer on the transparent substrate, an adhesive layer, attached to the transparent substrate and having a first side surface, a laser unit, wherein the laser unit comprises a front conductive structure, attached to the adhesive layer and having a second side surface, a back conductive structure, which comprises a first detecting electrode and a second detecting electrode separated from the first detecting electrode, a passivation layer covering one of the first side surface and the second side surface, and first via holes extending from the back conductive structure to the conductive layer, wherein the first detecting electrode and the second detecting electrode are electrically connected to the conductive layer through the first via holes.

Abstract: A silicon photonic integrated circuit with a heater. In some embodiments, the silicon photonic integrated circuit includes a first waveguide, on a top surface of the silicon integrated circuit, and a heater element, on the first waveguide. The heater element may include a first metal layer, on the first waveguide, and a second metal layer, on the first metal layer, the second metal layer having a different composition than the first metal layer, the second layer having a thickness of less than 300 nm.

Abstract: A method of fabricating a micro light emitting diode (micro LED) apparatus includes forming a first substrate including a first silicon layer, a second silicon layer, and a silicon oxide layer sandwiched between the first silicon layer and the second silicon layer; forming a plurality of micro LEDs on a side of the second silicon layer distal to the silicon oxide layer; bonding the first substrate having the plurality of micro LEDs with a second substrate; and removing the silicon oxide layer and the first silicon layer.

Abstract: A deposition method for manufacturing an active electro-optic layer includes providing a substrate or a base layer; and applying an electric field across a silicon nitride layer as it is being deposited on the substrate or the base layer to cause a poling of a deposited layer. Alternative methods for poling an active electro-optic layer and an electro-optical device are also described.

Abstract: A semiconductor device includes a substrate, a trench in the substrate, the trench having an inclined sidewall, a reflective layer over the inclined sidewall, a grating structure over the substrate, and a waveguide in the trench. The waveguide is configured to guide optical signals between the grating structure and the reflective layer.

Abstract: Systems and methods for assessing strain in structural components are disclosed. Structural components may have geometric patterns of diffraction cavities within the structural component, with the diffraction cavities in the geometric pattern each having a cavity width and being spaced from each other by a cavity spacing distance. The method may include projecting beams of electromagnetic (EM) energy through the structural component to the geometric pattern of diffraction cavities to create diffracted beams of EM energy that are reflected from or transmitted through the geometric pattern of diffraction cavities and have diffracted wavelengths indicating changes in the cavity spacing distances due to strain caused when the structural component is exposed to environmental conditions, detecting the diffracted wavelength of the diffracted beams, and correlating the diffracted wavelengths of the diffracted beams to the strain in the structural components.

Abstract: Provided is a cooled optical transmission module device including a silicon wafer having a plurality of platform mounting grooves, each of which serves as a space for mounting in which an optical transmission platform therein, a thermoelectric cooler bonded to the platform mounting groove to transfer heat to outside, the optical transmission platform provided on the thermoelectric cooler and configured to output an optical signal by generating and reflecting the optical signal, a dielectric sub-mount bonded to the platform mounting groove of the silicon wafer and electrically connected to the mounted optical transmission platform, and a cover configured to cover the platform mounting groove of the silicon wafer and seal the platform mounting groove while providing an electric path.

Abstract: An electrical coupling transfers electrical signals between a camera head and a cable and comprises a first part associated with the camera head and a second part associated with the cable and connectable to the first part. The coupling establishes contact between connectors of the first and second parts. The first part comprises a first connection position for reception of the second part, and a second connection position for reception of the second part. The connectors of the first and second parts comprise dot shaped connectors and elongated connectors. One of the first and second parts comprise the dot shaped connectors, and the other one comprises the elongated connectors. Each dot shaped connector is associated with one of the elongated connectors, and the connectors are arranged such that each dot shaped connector connects with an associated elongated connector in both the first connection position and the second connection position.

Abstract: Structures for a polarization switch and methods of fabricating a structure for a polarization switch. A waveguide core is located on a substrate. The waveguide core is composed of silicon nitride. An active layer is positioned proximate to a section of the waveguide core. The active layer composed of a phase change material having a first state with a first refractive index and a second state with a second refractive index.

Abstract: A transimpedance amplifier and photodiode that has a bias voltage node established at a bias voltage and a ground node/plane that connects, over a short distance as compared to the prior art, to a photodiode and a transimpedance amplifier. The photodiode is in a substrate and configured to receive and convert an optical signal to an electrical current. The photodiode has an anode terminal and a cathode terminal which is connected to the bias voltage node. One or more capacitors in or on the substrate and connected between the bias node and the ground node. The transimpedance amplifier has an input connected to the anode terminal of the photodiode and an output that presents a voltage representing the optical signal to an output path. The transimpedance amplifier and the photodiode are both electrically connected in a flip chip configuration and the ground plane creates a coplanar waveguide.

Abstract: In embodiments, an optoelectronic apparatus may include a substrate with a first side and a second side opposite the first side; a photodetector disposed on the first side of the substrate, the photodetector to convert a light signal into an electrical signal; and a dielectric metasurface lens etched into the second side of the substrate, the dielectric metasurface lens to collect incident light and focus it through the substrate onto the photodetector.

Abstract: A fabrication-tolerant non-linear waveguide taper for a waveguide transition can be designed by computing the scattering rate associated with the waveguide transition as a function of waveguide width of the waveguide taper for each of multiple sets of parameter values characterizing the waveguide transition (e.g., a set of nominal parameter values and sets of parameter values associated with process corners representing process variations from the nominal parameter values), determining an envelope of the computed width-dependent scattering rates, and computing a non-linear taper profile of the waveguide taper based on the envelope.

Abstract: An optical coupler device comprises a substrate having a substantially planar upper surface, and a grating structure on the upper surface of the substrate. In one embodiment, the grating structure comprises a copropagating array of waveguides that are substantially parallel to each other and extend along at least a portion of the upper surface of the substrate. Each of the waveguides has opposing sidewalls, wherein a width of each waveguide is defined by a distance between the opposing sidewalls. The opposing sidewalls each have a periodic structure that produces a sidewall modulation for each of the waveguides. An input port is in optical communication with the grating structure. The input port is configured to direct an input light beam in plane into the grating structure such that the beam propagates along the waveguides. The grating structure is configured to diffract the beam out of plane and into free space.

Abstract: Fabricating a photonic integrated circuit includes fabricating structures in one or more silicon layers. At least a first silicon layer comprises: one or more photonic structures, where the photonic structures include one or more waveguides and one or more photodetectors, and one or more light absorbing structures, where at least some of the light absorbing structures include doped silicon. Fabricating the photonic integrated circuit also includes fabricating at least one waveguide in the photonic integrated circuit for receiving light into at least one of the silicon layers.

Abstract: An optical connection assembly joining optical components is described. The optical connection assembly is manufactured using a fan out wafer level packaging to produce dies/frames which include mechanical connection features. A fastener is joined to a connection component and affixed to the mechanical connection features, to provide structural support to the connection between the connected component and the die/frame structure.

Abstract: An in-packaged multi-channel light engine is packaged for four or more sub-assemblies of optical-electrical sub-modules. Each is assembled with at least four laser chips, one or more driver chip, and one or more trans-impedance amplifier (TIA) chip separately flip-mounted on a silicon photonics interposer and is coupled to an optical interface block and an electrical interface block on a sub-module substrate. The in-packaged multi-channel light engine further includes a first frame fixture holding the four or more sub-assemblies and a second frame fixture configured to hold the first frame fixture with the four or more sub-assemblies. The in-packaged multi-channel light engine further includes an interposer plate inserted between the sub-module substrates and a module substrate and is compressed between a backplate member attached to a bottom side of the module substrate and a top plate member configured as a heatsink with a plurality of fin structures.

Abstract: An optical module according to the present invention includes: a first plasmonic waveguide having one end formed of a first metal layer formed over an end portion of a first substrate, and having another end connected to one end of a first optical waveguide; a second metal layer that is formed on a side surface continuous with the end portion of the first substrate and formed to be continuous with the first metal layer; a second substrate provided with a second plasmonic waveguide formed of a third metal layer; and a second optical waveguide that is connected to the second plasmonic waveguide and formed on the second substrate, wherein the second metal layer and a part of the third metal layer are joined together to connect the first substrate to the second substrate.

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. A photodetector may have a light-absorbing layer comprised of germanium. A waveguide core may be coupled to the light-absorbing layer. The waveguide core may be comprised of a dielectric material, such as silicon nitride. Another waveguide core, which may be comprised of a different material such as single-crystal silicon, may be coupled to the light-absorbing layer.