Abstract: The invention generally relates to methods of selectively removing lithium from various liquids, methods of producing high purity lithium carbonate, methods of producing high purity lithium hydroxide, and methods of regenerating resin.

Abstract: Disclosed is a single wall carbon nanotube (SWCNT) film electrode (FE), all-organic electroactive device systems fabricated with the SWNT-FE, and methods for making same. The SWCNT can be replaced by other types of nanotubes. The SWCNT film can be obtained by filtering SWCNT solution onto the surface of an anodized alumina membrane. A freestanding flexible SWCNT film can be collected by breaking up this brittle membrane. The conductivity of this SWCNT film can advantageously be higher than 280 S/cm. An electroactive polymer (EAP) actuator layered with the SWNT-FE shows a higher electric field-induced strain than an EAP layered with metal electrodes because the flexible SWNT-FE relieves the restraint of the displacement of the polymeric active layer as compared to the metal electrode. In addition, if thin enough, the SWNT-FE is transparent in the visible light range, thus making it suitable for use in actuators used in optical devices.

Abstract: The invention generally relates to methods of selectively removing lithium from various liquids, methods of producing high purity lithium carbonate, methods of producing high purity lithium hydroxide, and methods of regenerating resin.

Abstract: An object of the invention is to provide a tetrafluoroborate producing method that allows high-yield, high-efficiency production of a tetrafluoroborate by a continuous process, a tetrafluoroborate-containing electrolyte, and an electrical storage device including such an electrolyte. The invention provides a method for producing a tetrafluoroborate, which includes: a first step including dissolving boron trifluoride gas in an organic solvent; a second step including adding, to the organic solvent, a fluoride (MFn, wherein M represents a metal or NH4, and 1?n?3) in an amount stoichiometrically equivalent to or less than the amount of the boron trifluoride so that a tetrafluoroborate solution is produced; and a third step including circulating the tetrafluoroborate solution through the first step so that the boron trifluoride gas is dissolved in the tetrafluoroborate solution instead of the organic solvent.

Abstract: The present invention is generally directed toward a method to create an enhanced carbon nanotube spaceframe network. The spaceframe network contains an assembly of regiofunctional carbon nanotube beams by crown-to-crown connection into nodes to form a networked lattice configuration. The inventive method includes selecting crown materials and applying appropriate processing conditions which result in the production of secondary forms. The crown materials include polymers with unsaturated sites, polymeric crowns, silicon boron, poly(hydridocarbyne). The processing conditions include radical initiation, vulcanization, pyrolysis, hydroboration at unsaturation sites, using silicon bearing polymers in the Rf-CNB crowns, dissolution of silicon containing organics into the nodes and poly(hydridocarbyne). The secondary forms include cross-linked polymers, carbonized, graphitized, ceramic, diamond-like along with tailored functionalization.

Abstract: An aqueous fuel for generating hydrogen includes alkaline aqueous composition of about 17 to 37 mole percent of a sodium borohydride, and from about 0.001 to 1 mole percent of sodium hydroxide.

Abstract: A nitride-based compound semiconductor includes an atom of at least one group-III element selected from the group consisting of Al, Ga, In, and B, a nitrogen atom, and a metal atom that forms a compound by bonding with an interstitial atom of the at least one group-III element. The metal atom is preferably iron or nickel, A doping concentration of the metal atom is preferably equal to a concentration of the interstitial atom of the at least one group-III element.

Abstract: There are provided an electrolyte for a lithium ion capacitor, and a lithium ion capacitor including the same. The electrolyte includes a lithium salt having divalent anions. The lithium ion capacitor including the electrolyte may have high capacitance and stability, even at high temperatures.

Abstract: A process for manufacturing high density boron carbide by pressureless sintering, enabling to create sintered products of complex shapes and high strength. The process comprises mixing raw boron carbide powder with carbon precursor, such as a polysaccharide, compacting the mixture to create an object of the desired shape, and finally carbonizing and sintering the object at higher temperatures.

Abstract: The invention generally relates to methods of selectively removing lithium from various liquids, methods of producing high purity lithium carbonate, methods of producing high purity lithium hydroxide, and methods of regenerating resin.

Abstract: A core material for an aluminum alloy clad material contains Si in a content of 0.3% to 1.5% (hereinafter “%” means “percent by mass”), Mn in a content of 0.3% to 2.0%, Cu in a content of 0.3% to 1.5%, Ti in a content of 0.01% to 0.5%, and B in a content of 0.001% to 0.1%, with the remainder including Al and inevitable impurities. The core material and an aluminum alloy clad material using the same ensure sufficient corrosion resistance and give a product having an extended life.

Abstract: The present invention provides a method of producing a tetracyanoborate-containing ionic compound in a milder condition more efficiently and less expensively than conventional methods, and a tetracyanoborate-containing ionic compound having a reduced content of impure components. An ionic compound of the present invention is represented by the following general formula (I), has a content of fluorine atom-containing impurities of 3 mol % or less per 100 mol % of the ionic compound, and a method for producing an ionic compound represented by the general formula (I) of the present invention comprises a step of reacting starting materials containing a cyanide and a boron compound. (In the formula, Ktm+ denotes an organic cation [Ktb]m+ or an inorganic cation [Ke]m+; and m denotes an integer of 1 to 3.

Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Abstract: Bulk, superhard, B—C—N nanocomposite compacts were prepared by ball milling a mixture of graphite and hexagonal boron nitride, encapsulating the ball-milled mixture at a pressure in a range of from about 15 GPa to about 25 GPa, and sintering the pressurized encapsulated ball-milled mixture at a temperature in a range of from about 1800-2500 K. The product bulk, superhard, nanocomposite compacts were well sintered compacts with nanocrystalline grains of at least one high-pressure phase of B—C—N surrounded by amorphous diamond-like carbon grain boundaries. The bulk compacts had a measured Vicker's hardness in a range of from about 41 GPa to about 68 GPa.

Abstract: Methods for the production of a blue light emitting nanomaterial are provided comprising nitriding Group 13 metals to produce nitrided Group 13 metals and doping the nitrided Group 13 metals with a dopant, particularly an M2+ dopant, such as Mg2+ or Zn2+, to produce doped nanoparticles. Blue light emitting nanocomposites on other materials, such as SiO2 or TiO2, are also provided. Blue light emitting nanomaterials and nanocomposites also can be coupled to photonic crystals. Nanocrystal-based electroluminescence device are also disclosed.

Abstract: A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

Abstract: A multilayer whole solid-type lithium ion rechargeable battery has hitherto been produced by stacking green sheets of a positive electrode layer, a solid electrolyte layer, and a negative electrode layer, which are formed of respective materials different from each other in coefficient of thermal expansion, and firing the layers at a time. This technique poses problems of delamination and nonlamination attributable to a difference in shrinkage. The problems can be solved by forming green sheets with the addition of a sintering aid to each starting material powder for the positive electrode layer, the solid electrolyte layer, and the negative electrode layer and performing control, by setting the additive rate of the sintering aid and the firing temperature, so that the shrinkages of the respective green sheets are substantially equal to each other. Consequently, unfavorable phenomena such as delamination can be prevented.

Abstract: The crystal structure of three compositions of matter has been determined to be iso-structural with FeB ortho-rhombic (space group Pnma). The crystalline structures are: Ti0.5Ta0.5B, Zr0.5Ta0.5B and Hf0.5Ta0.5B. A process for preparing ceramics is disclosed. Molded ceramics including the compositions of matter are useful for applications such as rocket nozzles, leading edges on hypersonic missiles, engine parts and other applications requiring a structural component to operate at temperatures of 1600° C. to 2400° C.

Abstract: A method is disclosed whereby a functional nanomaterial such as a monolayer carbon nanotube, a monolayer boron nitride nanotube, a monolayer silicon carbide nanotube, a multilayer carbon nanotube with the number of layers controlled, a multilayer boron nitride nanotube with the number of layers controlled, a multilayer silicon carbide nanotube with the number of layers controlled, a metal containing fullerene, and a metal containing fullerene with the number of layers controlled is produced at a high yield. According to the method, when a multilayer carbon nanotube (3) is formed by a chemical vapor deposition or a liquid phase growth process, an endothermic reaction aid (H2S) is introduced in addition to a primary reactant (CH4, H2) in the process to form a monolayer carbon nanotube (4).

Abstract: Pressureless sintered high density materials containing hexagonal boron nitride have low coefficients of friction and high wear resistance and are useful for bearings, bushings and other articles subjected to bearing loads.

Abstract: According to some embodiments, a method of preparing a superhard material involves using mixtures of boron with carbon nitride of C3N4 stoichiometry as precursors. The C3N4 may be nanospherical. The result of chemical interaction of these components is the formation of new ternary compound B—C—N compound with a cubic structure. According to some embodiments, the composition is BCxN, where x is about 0.5. According to some embodiments, the composition is BCxN, where x is about 0.2. According to some embodiments, the compound has a unit cell parameter a=3.645±0.005 ?. According to some embodiments, the unit cell parameter a is about 3.655 A. Synthesis is carried out under the conditions of thermodynamic stability of diamond at pressures higher that 6.0 GPa and temperatures above 1000° C. The starting components are taken according to the following ratio: boron—20-60 wt. %, C3N4—40-80 wt. %.

Abstract: The invention relates to a phosphonium borate compound represented by Formula (I) (hereinafter, the compound (I)). The invention has objects of providing (A) a novel process whereby the compound is produced safely on an industrial scale, by simple reaction operations and in a high yield; (B) a novel compound that is easily handled; and (C) novel use as catalyst. Formula (I): (R1)(R2)(R3)PH.BAr4??(I) wherein R1, R2, R3 and Ar are as defined in the specification. The process (A) includes reacting a phosphine with a) HCl or b) H2SO4 to produce a) a hydrochloride or b) a sulfate; and reacting the salt with a tetraarylborate compound. The compound (B) has for example a secondary or tertiary alkyl group as R1 and is easily handled in air without special attention.

Abstract: This idea relates to the synthesis of salts of dodecahydrododecaborate B12H12 (2-). In the proposed process a metal hydride is reacted with an alkyl borate in the presence of a Lewis base to produce Lewis base-borane compex, which is thermally decomposed to produce salts of B12H12 (2-), while alkyl borare is recovered from the reaction by-product and is recycled.

Abstract: Metal aminoboranes of the formula M(NH2BH3)n have been synthesized. Metal aminoboranes are hydrogen storage materials. Metal aminoboranes are also precursors for synthesizing other metal aminoboranes. Metal aminoboranes can be dehydrogenated to form hydrogen and a reaction product. The reaction product can react with hydrogen to form a hydrogen storage material. Metal aminoboranes can be included in a kit.

Abstract: A process for producing borazane from boron-nitrogen and boron-nitrogen-hydrogen containing BNH-waste products. The process includes reacting the BNH-waste products with a hydrogen halide, having the formula HX, wherein X is selected from the group consisting of F, Cl, Br, I, and combinations thereof, to form any of the following: a boron trihalide, having the formula BX3, an ammonium halide, having the formula NH4X, and hydrogen. The boron trihalide is then reacted with the hydrogen to form diborane, having the formula B2H6, and hydrogen halide. The ammonium halide is then converted to ammonia, having the formula NH3, and hydrogen halide. The diborane is then reacted with the ammonia to form borazane, having the formula BH3NH3.

Abstract: A process for the preparation of alkali metal cyanoborates, the further conversion thereof into salts comprising cyanoborate anions and organic cations, these salts, and the use thereof as ionic liquids are described.

Abstract: Osmium, when combined with boron alone, or in combination with rhenium, ruthenium or iron, produces compounds that are ultra-hard and incompressible. These osmium diboride compounds are useful as a substitute to for other super or ultra-hard materials that are used in cutting tools and as abrasives. The osmium diboride compounds have the formula OsxM1-xB2 where M is rhenium, ruthenium or iron and x is from 0.01 to 1, except when x is not 1 and M is rhenium, x is from 0.01 to 0.3.

Abstract: The disclosure relates to new compositions comprising an, B12FxH12-x? anion that may be prepared chemically or electrochemically by oxidation of B12FxH12-x2? salts. This anion can be generated electrochemically in a voltammetry experiment, or by chemically by treatment of the (2?) anions with powerful oxidants such as XeF2 or NO2(+) salts. The new compositions can be used as 1 electron chemical oxidants and in electrochemical cells such as lithium ion batteries where their fomation at elevated potential can serve to limit the upper limit of voltage during the overcharge of such a cell.

Abstract: A production method of high purity silver tetrafluoroborate, capable of producing silver tetrafluoroborate (AgBF4) at purity higher than the conventional, without using an organic solvent. The production method of the present invention is characterized in that the method comprises the step of: reacting silver fluoride with boron trifluoride in the presence of anhydrous hydrofluoric acid. Boron trifluoride is delivered into a solution obtained by dissolving or suspending silver fluoride in an anhydrous hydrofluoric acid solution.

Abstract: The present invention relates to a purification method for removing impurities containing oxygen from materials, especially boron, by hydrogen-based plasma treatment. The present procedure allows for efficient removal of oxygen while avoiding a thermal treatment that would substantially change the structure of the treated material, or a treatment leaving a reducing agent within the treated material.

Abstract: An electrochemical device and a proton conducting medium for use in an electrochemical device having a proton conducting electrolyte comprising the formula: HaMbQ.nH2O where H is a proton, M is a cation, Q is the fluoroborate or fluoroheteroborate anion, n ranges from 0.01 to 1000, a ranges from 0.01 to 2 and b ranges from 0 to 2, a and b are chosen to render the formula electrically neutral, and when b is greater than 0, the ratio of b to a is less than 100 to 1.

Abstract: An electrode material for an anode of a rechargeable lithium battery, containing a particulate comprising an amorphous Sn.A.X alloy with a substantially non-stoichiometric ratio composition. For said formula Sn.A.X , A indicates at least one kind of an element selected from a group consisting of transition metal elements, X indicates at least one kind of an element selected from a group consisting of O, F, N, Mg, Ba, Sr, Ca, La, Ce, Si, Ge, C, P, B, Pb, Bi, Sb, Al, Ga, In, Tl, Zn, Be, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, As, Se, Te, Li and S, where the element X is not always necessary to be contained. The content of the constituent element Sn of the amorphous Sn.A.X alloy is Sn/(Sn+A+X)=20 to 80 atomic %.

Abstract: Provided is a semiconductor doped with an increased binding energy hydrogen species and a method of making the doped semiconductor.

Abstract: The present invention relates to a thiogallate phosphor expressed as AB2S4. The thiogallate phosphor of the present invention is configured by replacing a position A where a divalent ion is required with a trivalent element having an ion size similar to that of the element at the position A and with a monovalent element having an ion size similar to that of the element at the position A. Preferably, the trivalent and monovalent elements are replaced by the same amount. Further, the present invention relates to a white light emitting diode and is to manufacture a white light emitting diode with excellent luminous efficiency.

Abstract: Hydrogen storage materials are provided that may be capable of a hydrogenated state and dehydrogenated state. The hydrogen storage material comprises a plurality of hydrogen storage molecular units. Each hydrogen storage molecular unit comprises a transition metal bonded to one or more elements from period 2 of the periodic table, wherein the hydrogen storage material includes at least 6.5% molecular hydrogen by weight when in the hydrogenated state and is stable at temperatures below about 200° C. and at pressures of about 1 atm and below. The hydrogen storage materials may be used in conjunction with fuel cells in portable electronic devices.

Abstract: Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.

Abstract: Disclosed herein are a hard coating film, a material coated with the hard coating film, and a die for cold plastic working, the coating film excelling conventional surface coating layers in wear resistance as well as slidability with a low frictional coefficient. The hard coating film is characterized by a chemical composition of (VxM1-x) (BaCbN1-a-b), where 0.4?x?0.95??(1A) 0?a?0.2??(2A) 0?1-a-b?0.35??(3A) 0.6?b?1??(4A) M denotes at least one species of elements belonging to Groups 4a, 5a, and 6a and Si and Al; and x, 1-x, a, b, and 1-a-b represent respectively the atomic ratio of V, M, B, C, and N.

Abstract: A radiation detector crystal is made from CdxZn1-xTe, where 0?x?1; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.

Abstract: The present invention relates to processes for producing nanowires and nanotubes by treating a fiber comprising at least one support material and at least one thermoelectrically active material or a precursor compound of a thermoelectrically active material, to a nanowire comprising at least one thermoelectrically active material and having a diameter of ?200 nm and a length of ?1 mm, to nanotubes comprising at least one thermoelectrically active material and having a diameter of ?200 nm, a wall thickness of ?30 nm and a length of ?1 mm, and to the use of the nanowires or nanotubes for thermoelectric heating, for electricity generation, in sensors or for temperature control.

Abstract: The invention in one aspect relates to an anti-chafing composition with improved efficacy, in one embodiment, comprising an effective amount of boron nitride suspended in a dermatologically acceptable carrier vehicle. Another embodiment relates to an anti-chafing composition in the form of a powder or a stick containing boron nitride. The present invention also relates to a method of inhibiting or reducing chafing to the skin by topically applying an effective amount of such anti-chafing composition to the skin or to a surface to be in contact with the skin.

Abstract: A process for fluorination of borohydride salts including providing a reaction medium comprising HF and a superacid. A borohydride salt compound is added to the reaction medium. The borohydride salt is reacted with the with the reaction medium under conditions to form a fluorinated borohydride salt. In addition, reactor vessels may be provided for reacting the HF, superacid additive and borohydride that are fabricated from materials resistant to superacid compositions.

Abstract: Crystalline scintillator materials comprising nano-scale particles of metal halides are provided. The nano-scale particles are less than 100 nm in size. Methods are provided for preparing the particles. In these methods, ionic liquids are used in place of water to allow precipitation of the final product. In one method, the metal precursors and halide salts are dissolved in separate ionic liquids to form solutions, which are then combined to form the nano-crystalline end product. In the other methods, micro-emulsions are formed using ionic liquids to control particle size.

Abstract: The present invention comprises new materials, material structures, and processes of fabrication of such that may be used in technologies involving the conversion of light to electricity and/or heat to electricity, and in optoelectronics technologies. The present invention provide for the fabrication of a clathrate compound comprising a type II clathrate lattice with atoms of silicon and germanium as a main framework forming lattice spacings within the framework, wherein the clathrate lattice follows the general formula Si136-yGey, where y indicates the number of Ge atoms present in the main framework and 136-y indicates the number of Si atoms present in the main framework, and wherein y>0.

Abstract: Methods of reducing smoke levels in smoke-affected areas, reducing the level of toxic compounds produced by fires, fire suppression, and increasing flame retardancy. In particular, methods according to the present invention comprise dispersing nanocrystalline particles in the areas affected by smoke for sorption of smoke particulates and toxic compounds produced from a fire. The nanocrystalline particles are also effective for use in methods of fire suppression and flame retardancy.

Abstract: This invention relates to a solid divided composition comprising grains whose mean size is greater than 25 ?m and less than 2.5 mm, wherein each grain is provided with a solid porous core and a homogeneous continuous metal layer consisting of at least one type of transition non-oxidised metal and extending along a gangue coating the core in such a way that pores are inaccessible. A method for the production of said composition and for the use thereof in the form of a solid catalyst is also disclosed.

Abstract: An electrochemical device and a proton conducting medium for use in an electrochemical device having a proton conducting electrolyte comprising the formula: HaMbQ.nH2O where H is a proton, M is a cation, Q is the fluoroborate or fluoroheteroborate anion, n ranges from 0.01 to 1000, a ranges from 0.01 to 2 and b ranges from 0 to 2, a and b are chosen to render the formula electrically neutral, and when b is greater than 0, the ratio of b to a is less than 100 to 1.

Abstract: Alloyed nanophenes comprising carbon, boron, and a Group V element other than nitrogen are provided. The alloyed nanophenes are useful, for example, as miniature electronic components, such as wires, coils, schottky barriers, diodes, inductors, memory elements, and other circuit devices and elements.

Abstract: The disclosure relates to a material for reversibly storing and releasing hydrogen comprising graphite or a graphitic structure, for example, comprising an ordered graphite structure of carbon and nitrogen atoms wherein the interlayer and/or interstitial volume is occupied with at least one intercalated anionic species. While any suitable anionic species can be employed, examples of suitable species are at least one of: F? (fluoride), (C?C)2? (diacetylide), and (N?C?N)2?. Desirable anionic species typically have a relatively high charge to volume ratio. The disclosure also relates to a material for reversibly storing and releasing hydrogen comprising ordered graphitic structures comprising at least one member selected from the group of graphite, single walled carbon nanotubes, multiwalled carbon nanotubes, graphite nanofibers, carbon nanohorns, and boron nitride.

Abstract: A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

Abstract: A method for producing a ceramic material product. A filler material is provided. The filler material is divided into filler granules collectively having a median diameter approximately 10 microns or less. An amount of carbon is provided. The carbon is divided into carbon particles and the carbon particles are allowed to coat the filler granules. The mixture of carbon-coated filler granules is formed into a selected shape. The formed mixture is placed in a substantial vacuum. The mixture is introduced to a pre-selected amount of silicon and the mixture of carbon-coated filler granules and silicon is heated to a temperature at or above the melting point of the silicon.