Abstract: Silicon oxide based composite anode active materials including amorphous silicon oxides are provided. In one embodiment, the amorphous silicon oxide is represented by SiOx (where 0<x<2), has a binding energy of about 103 to about 106 eV, a silicon peak with a full width at half maximum (FWHM) ranging from about 1.6 to about 2.4 as measured by X-ray photoelectron spectrometry, and an atomic percentage of silicon greater than or equal to about 10 as calculated from an area of the silicon peak. The anode active material is a composite anode active material obtained by sintering hydrogen silsesquioxane (HSQ). Anodes and lithium batteries including the anode active material exhibit improved charge and discharge characteristics.

Abstract: The present invention relates to a method for detecting and/or measuring the concentration of fluoride (F?) or hydrogen fluoride (HF) in a sample, comprising the steps consisting of bringing said sample, in aqueous solution, into contact with a silylated organic compound in order to obtain a measurement solution, with said silylated organic compound being desilylated when it is in the presence of hydrofluoric acid or a fluoride, with the silylated organic compound and the desilylated organic compound being able to be detected and/or measured separately from each other; and detecting and/or measuring, in said measurement solution, the appearance of the desilylated against compound or the disappearance of the silylated organic compound, which takes place if fluoride or hydrogen fluoride is present in the sample. The method enables the presence of hydrogen fluoride or of fluorine to be detected very easily and expediently at concentrations of 10?2 l of HF/106 l of air (10 ppb) or else of 0.

Abstract: A method for producing crystallized silicon according to the EFG process by using a shaping part, between which part and a silicon melt, crystallized silicon grows in a growth zone. Inert gas and at least water vapor are fed into the silicon melt and/or growth zone, by means of which the oxygen content of the crystallized silicon is increased. From 50 to 250 ppm of vapor water is added to the inert gas, and the inert gas has an oxygen, CO and/or CO2 content of less than 20 ppm total.

Abstract: It is an object to provide a method for producing stable alkaline metal oxide sols having a uniform particle size distribution. The method comprises the steps of: heating a metal compound at a temperature of 60° C. to 110° C. in an aqueous medium that contains a carbonate of quaternary ammonium; and carrying out hydrothermal processing at a temperature of 110° C. to 250° C. The carbonate of quaternary ammonium is (NR4)2CO3 or NR4HCO3 in which R represents a hydrocarbon group, or a mixture thereof. The metal compound is one, or two or more metal compounds selected from a group of compounds based on a metal having a valence that is bivalent, trivalent, or tetravalent.

Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400?, provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.

Abstract: Novel superhard dielectric compounds useful as gate dielectrics discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula H3X—O—XH3, wherein X is silicon or carbon with a compound comprising boron or nitrogen in a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.

Abstract: Dendron ligands or other branched ligands with cross-linkable groups were coordinated to colloidal inorganic nanoparticles, including nanocrystals, and substantially globally cross-linked through different strategies, such as ring-closing metathesis (RCM), dendrimer-bridging methods, and the like. This global cross-linking reaction sealed each nanocrystal within a dendron box to yield box-nanocrystals which showed dramatically enhanced stability against chemical, photochemical and thermal treatments in comparison to the non-cross-linked dendron-nanocrystals. Empty dendron boxes possessing a very narrow size distribution were formed by the dissolution of the inorganic nanocrystals contained therein upon acid or other etching treatments.

Abstract: Silane-modified biopolymeric, biooligomeric, oxidic or siliceous filler obtainable by reacting at least one biopolymeric, biooligomeric, oxidic or siliceous filler in a compressed gas with at least one silane. The silane-modified biopolymeric, biooligomeric, oxidic or siliceous fillers are used in rubber compounds.

Abstract: Spiral shaped fibers were utilized to prepare completely novel metal oxide nanotubes comprising solely metal oxides. The metal oxide nanotubes comprise solely a hollow cylinder shaped metal oxide which may contain hydroxyl groups constituting a double helix and having hole diameter distributions containing two peak hole diameters ranging from 1 to 2 nm and from 3 to 7 nm. The tubes may be obtained by forming spiral shaped fibers from a solution of compound 1 and compound 2 and using the fibers as a template for making the nanotubes. The hydrogen adsorption and storage capacity of the metal oxide nanotubes are extremely good.

Abstract: A method for manufacturing a highly-crystallized double oxide powder composed of a single crystal phase which can be used as a phosphor material, a dielectric material, a magnetic material, etc. The method involves forming fine droplets of a raw material solution containing a raw material compound that includes at least one metal element and/or at least one semi-metal element that constitutes a double oxide, and heating these droplets at a high temperature, wherein the raw material solution is a solution which exhibits only one main peak attributable to the decomposition reaction of the raw material compound or a reaction intermediate thereof in a DTA profile when the solution is dried and solidified and subjected to TG-DTA measurement.

Abstract: A packaging laminate (10) including a substrate film (15) coated with a carbon containing silicon oxide layer (16, 17) on both surfaces is disclosed herein. A method for producing the laminate (10), and blanks and packages fabricated from the laminate are also disclosed herein. The PECVD process of the present invention strains the substrate film (15) during deposition thereby creating a very thin oxide layer with superior durability, oxygen and aroma barrier properties. The carbon-containing silicon oxide coating (16, 17) has a stoichiometry of SiOxCy in which x is witin the range of 1.5–2.2 and y is within the range of 0.15–0.80. The substrate film (15) may include a core layer (12) of a material selected from the group consisting of paper, paperboard, a foamed core, polyethylene terephtalate, polyamide, polyethylene and polypropylene.

Abstract: A process of treating metal oxide nanoparticles that includes mixing metal oxide nanoparticles, a solvent, and a surface treatment agent that is preferably a silane or siloxane is described. The treated metal oxide nanoparticles are rendered hydrophobic by the surface treatment agent being surface attached thereto, and are preferably dispersed in a hydrophobic aromatic polymer binder of a charge transport layer of a photoreceptor, whereby ?—? interactions can be formed between the organic moieties on the surface of the nanoparticles and the aromatic components of the binder polymer to achieve a stable dispersion of the nanoparticles in the polymer that is substantially free of large sized agglomerations.

Abstract: A method of synthesizing metal alkoxide polymers is provided, for use, as an example, in synthesizing hybrid organic/inorganic materials with low optical absorption for optical applications. The method involves a plurality of acidolysis steps involving acidolysis of a metal alkoxide compound with an acid to produce an intermediate acidolysed solution, and combining and condensing the intermediate acidolysed solutions to produce the metal alkoxide polymer.

Abstract: A method for obtaining pigments for ceramic and glass, particularly for substrates and coatings, including a step of adding a solution of an iron salt to at least one silicon addition agent including silica in gel form.

Abstract: Silane-modified biopolymeric, biooligomeric, oxidic or siliceous filler obtainable by reacting at least one biopolymeric, biooligomeric, oxidic or siliceous filler in a compressed gas with at least one silane. The silane-modified biopolymeric, biooligomeric, oxidic or siliceous fillers are used in rubber compounds.

Abstract: A method is provided for preparing a silicon monoxide vapor deposition material where a mixture of a silicon powder and a silicon dioxide powder is heated and reacted in a raw material chamber under vacuum to generate a silicon monoxide gas, and silicon monoxide is precipitated on a precipitation substrate in a precipitation chamber provided above the raw material chamber. As the precipitation substrate, a cylindrical body is used where a circumference wall is inclined from the perpendicular by 1 to 45 degrees and the inner diameter of the upper end thereof is smaller than that of the lower end, and the precipitation is conducted under a vacuum of 7 Pa to 40 Pa. The method allows the preparation of a silicon monoxide vapor deposition material exhibiting a weight reduction rate in the rattler test (a rattler value) of 1.0% or less. the method provides reduced occurrences of the splash phenomenon during the formation of a silicon monoxide vapor deposition film.

Abstract: A silicon oxide powder can be continuously prepared by feeding a raw material powder mixture containing silicon dioxide powder into a reaction chamber (2) at a temperature of 1,100-1,600° C., to produce a silicon oxide gas, transferring the silicon oxide gas to a deposition chamber (11) through a transfer conduit (10) maintained at a temperature of from higher than 1,000° C. to 1,300° C., causing silicon oxide to deposit on a substrate (13) which is disposed and cooled in the deposition chamber, scraping the silicon oxide deposit, and recovering the deposit in a recovery chamber (18). The method and apparatus is capable of continuous and stable production of amorphous silicon oxide powder of high purity.

Abstract: A collection of silicon oxide nanoparticles have an average diameter from about 5 nm to about 100 nm. The collection of silicon oxide nanoparticles effectively include no particles with a diameter greater than about four times the average diameter. The particles generally have a spherical morphology. Methods for producing the nanoparticles involve laser pyrolysis. The silicon oxide nanoparticles are effective for the production of improved polishing compositions including compositions useful for chemical-mechanical polishing.

Abstract: A non-single crystalline semiconductor material includes coordinatively irregular structures characterized by distorted chemical bonding, reduced dimensionality and novel electronic properties. A process for forming the material permits variation of the size, concentration and spatial distribution of coordinatively irregular structures. The electronic properties of the material can be changed by controlling the characteristics of the coordinatively irregular structures.

Abstract: Silicon oxide containing active silicon represented by the general formula: SiOx wherein x is from 0.8 to 1.9, when analyzed by solid state NMR (29Si DD/MAS) with a sufficient relaxation time set, exhibits a spectrum having two separate peaks, a broad peak (A1) centered at −70 ppm and a broad peak (A2) centered at −110 ppm, the area ratio A1/A2 being in the range of 0.1≦A1/A2≦1.0.

Abstract: It is an object of the present invention to provide a glass member resistant against plasma corrosion suitably used as a jig material in producing semiconductors, which exhibits excellent resistance against plasma corrosion, and which is free from the generation of particles. The above problem is solved by a glass member resistant to plasma corrosion, comprising a portion to be exposed to plasma gas, which is made of a glass material containing, as the essential component, one compound component selected from the group consisting of compounds expressed by one of the chemical formulae SiO2—Al2O3—CaO, SiO2—Al2O3—MgO, SiO2—BaO—CaO, SiO2—ZrO2—CaO, SiO2—TiO2—BaO, provided that the constitution ratio of the compound components is within the vitrification range.

Abstract: The invention relates to a material including carbon, oxygen, silicon and hydrogen and having a dielectric constant of from about 2.1 to about 3.0 where an FTIR scan of the material includes at least two major peaks signifying Si—CH3 bonding. The invention further relates to a material which has a variable dielectric constant through the thickness of the material. Another aspect of the invention is the method of making the material.

Abstract: The invention pertains to a process for preparing a synthetic clay mineral which comprises silicon, aluminum, and at least one octahedron ion, which clay mineral has a total content of sodium and potassium of less than 0.5 wt. %, comprising the steps of a) providing a silica-alumina with a total content of sodium and potassium of less than 2.0 wt. % b) combining the silica-alumina with an octahedron ion source in such a manner that less than 0.1 mole of the total of sodium or potassium is added per mole of octahedron ion, c) if necessary, adjusting the pH to a value of at least 7, with less than 0.1 mole of the total of sodium and potassium being added per mole of octahedron ion during the pH adjustment, d) ageing the precipitate formed in c) at a temperature of 0-350° C. in an aqueous environment; e) optionally isolating the resulting material, optionally followed by washing.

Abstract: The present invention provides a thermal stable low elastic modulus material, which has high thermal stability, is little in change in dynamic characteristics such as coefficient of thermal expansion and elastic modulus within a temperature of −50° C. to 300° C., has an elastic modulus at room temperature of 2-0.01 GPa and is high in reliability of electric insulation regardless of a temperature fluctuation, and provides a semiconductor device using the same.

Abstract: A composition represented by the formula Si1−xGexO2(1−y)N1.33y, wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5×10−6°C−1 to about 5.0×10−6° C.−1. The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.

Abstract: There is provided an array of fluoro-substituted silsesquioxane thin film precursors having a structure wherein fluoro groups are bonded to the silicon atoms of a silsesquioxane cage. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [F—SiO1.5]x[H—SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. Also provided are films made from these precursors and objects comprising these films.

Abstract: A continuous process for the conversion of sodium silicate to silicic acid, wherein a moving bed of a protonated ion exchange resin is contacted with an inlet stream of sodium silicate to provide an outlet stream of silicic acid. The outlet stream of silicic acid produced thereby can be processed into a variety of silica products. The outlet moving bed of spent sodium-enriched ion-exchange resin is continuously regenerated into protonated ion-exchange resin by contacting the spent resin with an inlet stream of acid of sufficient strength to exchange the sodium ions in the spent resin with a proton. The regenerated protonated ion-exchange resin is continuously recycled back into the sodium silicate stream for further production of silicic acid.

Abstract: A composition represented by the formula Si1−xGexO2(1−y)N1.33y, wherein x is from about 0.05 to about 0.6 and y is from about 0.14 to about 0.74 exhibits properties highly suited for use in fabricating waveguides for liquid crystal based optical devices. In particular, the compositions have an index of refraction of from about 1.6 to about 1.8 for light at a wavelength of 1550 nm, and/or a coefficient of thermal expansion of from about 2.5×10−6° C.−1 to about 5.0×10−6° C.−1. The compositions also have inherently low hydrogen content, and a high hydrogen permeability which allows better hydrogen removal by thermal annealing to provide a material which exhibits low optical losses and better etching properties than alternative materials.

Abstract: The present invention relates to a process for easily and efficiently producing silica particles having a narrow particle size distribution and a high porosity from inexpensive starting materials such as sodium silicate. The silica particles of the present invention can be obtained in the form of a slurry containing them by (1) forming a slurry by mixing first particles difficultly soluble in an alkali and soluble in an acid, with an aqueous alkali silicate solution to form a first slurry containing the first particles, (2) neutralizing the first slurry with a mineral acid to prepare a second slurry containing second particles wherein silica is deposited on the first particles, and (3) adding a mineral acid to the second slurry to dissolve the first particles from the second particles, to prepare a third slurry containing silica particles.

Abstract: A method and an apparatus is provided for removing wafer processing by-products from gas fluid exhaust systems utilizing an energy source placed within an exhaust channel either alone or in combination with a cleaning gas. The placement of the energy source in an exhaust channel enables emitted energy to react with wafer processing by-products to convert the by-product residues to more removable forms. Additionally provided is a cleaning gas source internal to the exhaust channel to further react with and convert exiting by-product residues to gaseous fluids.

Abstract: An anti-reflective film for deep ultraviolet (DUV) photolithograghy includes silicon oxime having the formula Si(1−x+y+z)NxOy:H2, wherein x, y, and z represent the atomic percentage of nitrogen, oxygen, and hydrogen, respectively. The film is characterized by a substantial lack of bonding between silicon atoms and oxygen atoms, and has a thickness of less than approximately 600 Å which is selected to produce destructive interference between incident and reflected light at a selected DUV wavelength.

Abstract: The tribo-electro static charge is stabilized by treating the surface of the metallic-oxide fine powders such as a silica powder, using the mixed solution which consists of a specific silane coupling agent containing primary amino group, other silane coupling agent containing amino group and the hydrophobic agent The powder such as silica has the small charge variation with time, and is suitable as the additive of the powder coatings or the electrophotographic toner.

Abstract: A method for making silicon oxynitride comprising providing a vaporous gas stream of a compound selected from the group consisting of silazanes and siloxazanes. An enclosed, heated reaction site is also provided. The vaporous gas stream is delivered to the enclosed, heated reaction site in which the levels of oxygen are strictly controlled to promote the formation of silicon oxynitride particles.

Abstract: A method for the preparation of tetraorganooxysilanes is provided which comprises reaction of a natural silicon dioxide source with an organo carbonate.

Abstract: Silicon oxide containing active silicon represented by the general formula: SiOx wherein x is from 0.8 to 1.9, when analyzed by solid state NMR (29Si DD/MAS) with a sufficient relaxation time set, exhibits a spectrum having two separate peaks, a broad peak (A1) centered at −70 ppm and a broad peak (A2) centered at −110 ppm, the area ratio A1/A2 being in the range of 0.1≦A1/A2≦1.0.

Abstract: A silicon single-crystal wafer having a diameter of 6 inches or larger and improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof is provided to thereby heighten the yield of device chips produced per wafer. This wafer has no crystal defects with regard to the dielectric breakdown strength of oxide film in its peripheral region which extends from the circumference and accounts for up to 50% of the total area, in particular which extends from the circumference to a circle 30 mm apart from the circumference. A process for producing a silicon single crystal for easily producing, by the Czochralski method, a silicon single-crystal wafer improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof without considerably lowering the production efficiency is provided.

Abstract: The present invention relates to a manufacturing method of molecular sieve compound and in particular, to a manufacturing method whereas crystalline aluminosilicate salt is formed in the pores of activated carbon and thereby possessing both hydrophilic and hydrophobic adsorption capacity, therefore the molecular sieve compound manufactured according to this present invention is in use for treatment agent of wastewater, deodorizing agent, antibacterial and disinfectant agent, adsorbent of organic matter and water, removal agent of harmful gas of cigarette, separable agent of air and many other applications.

Abstract: A process for producing synthetic quartz powder which comprises calcining silica gel powder to produce a synthetic quartz glass powder, wherein dry air is used in the calcining process at least in the process of cooling from 800.degree. C. to 200.degree. C. This process enables efficient production of synthetic quartz glass powder on an industrial scale.

Abstract: This invention is directed to the preparation of alloy articles consisting essentially of glass and high temperature organic thermoplastic or thermosetting polymers having working temperatures which are compatible with that of the glass and/or the precursor glass for the glass-ceramic. The glass and polymer are combined at the working temperature to form an intimate mixture; i.e., the glass and polymer are in a sufficiently fluid state to be blended together to yield a body exhibiting an essentially uniform, fine-grained microstructure wherein, desirably, there is at least partial miscibility and/or a reaction between the glass and the polymer to promote adhesion and bonding therebetween. A body is shaped from the mixture and cooled to room temperature.

Abstract: A noble metal hydrocracking catalyst which has high selectivity for naphtha range products is provided. The hydrocracking catalyst comprises:a) from about 70 to about 90 weight percent of a Y zeolite, based on the catalyst having a silica to alumina mole ratio of from about 4.8 to less than 6.0, a unit cell constant within the range of about 24.50 to about 24.57, a Na.sub.2 O level of less than or equal to about 0.2 weight percent;b) from about 10 to about 30 weight percent, based on the catalyst of an alumina having a mercury intrusion pore volume within the range from about 0.55 to about 0.85 cc/g; andc) from about 0.5 to 1 weight percent, based on the catalyst of a noble metal; wherein said hydrocracking catalyst have a dispersivity of the noble metal of equal or greater than about 50% by hydrogen chemisorption measurement, a surface area of greater than or equal to 700 m.sup.2 /g by BET surface area measurement, a compacted bulk density within the range of from about 0.40 to 0.

Abstract: A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.

Abstract: Microporous fluorinated silica agglomerates are disclosed and their method of preparation from a reaction of colloidal silica of small particle sizes with an alkylamine (or a hindered amine) and hydrofluoric acid or with alkylammonium fluoride, under convenient laboratory conditions at an atmospheric pressure. The agglomerate is useful to interact with dispersants surrounding inkjet ink pigment particles.

Abstract: A for producing metal oxide and/or organo-metal oxide compositions from metal oxide and organo-metal oxide precursors utilizing a rate modifying drying agent. The process allows metal oxide and/or organo-metal oxide compositions to be produced from a wide variety of metal oxide and organo-metal oxide precursors including metal halides and organometallic halides.

Abstract: Compounds of the formulae I and II ##STR1## are prepared by an addition reaction of a compound of the formula IIIR.sup.1 OH IIIwith an acetylene or allene of the formula IV or V ##STR2## where R.sup.1 and R are as defined, in the gas phase at elevated temperatures in the presence of a heterogeneous, silicate-containing catalyst, by a process in which the catalyst used is one which contains or consists of, as the active component, a zinc silicate obtained by precipitation in aqueous solution from a soluble silicon compound and zinc compound, zinc silicate beinga) an essentially X-ray amorphous zinc silicate of the formula VIZn.sub.a Si.sub.c O.sub.a+2c-0.5e (OH).sub.e.fH.sub.2 O VI,where e is from 0 to 2a+4c and the ratio a:c is from 1 to 3.5, and the ratio f:a is from 0 to 200, and/orb) a crystalline zinc silicate having the structure of hemimorphite of the formula Zn.sub.4 Si.sub.2 O.sub.7 (OH).sub.2.H.sub.2 O.

Abstract: The invention relates to a process for the preparation of crystalline sodium silicates having a sheet structure and high .delta. phase content from water glass, which has been prepared predominantly hydrothermally, by dehydration of the water glass and subsequent crystallization at elevated temperature, wherein the water glass is a mixture of water glass prepared hydrothermally and tank furnace water glass, and also to its use.

Abstract: The invention relates to a method of manufacturing compounds of the Monazite type, doped or not doped with actinides, to a method of packaging radioactive waste, high in actinides and in lanthanides by incorporating this waste in a confining matrix based on Monazite, and to a block for the packaging of radioactive waste that includes a Monazite matrix containing the radioactive elements. This method includes mixing, in the solid phase, reactants comprising an inactive compound of the lanthanide metaphosphate type Ln (PO.sub.3).sub.3 and one or more lanthanide oxides and/or one or more compounds capable of reacting with this oxide or these oxides during a thermal sintering process; the shaping of the mixture thus obtained, and the reaction sintering of said formed mixture, as a result of which a Monazite or a compound of the Monazite type is obtained.

Abstract: Preparation of inorganic aerogels based on oxides of the metals magnesium, aluminum, silicon, tin, lanthanum, titanium, zirconium, chromium and/or thorium by producing a hydrogel in a sol/gel process, replacing the water in the hydrogel by an organic solvent, and drying the solvent-moist gel, takes place by conducting the drying step by exposing the solvent-moist gel to an ambient temperature which is above the boiling temperature of the solvent and at a pressure which is below the supercritical pressure of the solvent in such a way that the solvent within the gel is heated up very rapidly and evaporates.

Abstract: The present invention relates to directionally solidified, arsenic- and/or antimony-containing, multicrystalline silicon, a process for the production thereof and its use, and to solar cells containing this silicon and a process for the production thereof.

Abstract: A stabilized solution of hydrogen silsesquioxane resin is disclosed. The solution comprises 100 parts by weight solvent, 0.1 to 100 parts by weight hydrogen silsesquioxane resin, and 0.002 to 4 parts by weight acid. These solutions are useful for forming coatings on substrates.

Abstract: A solid silica derivative which is represented by the general formula H.sub.n SiO.sub.(4-n)/2 wherein n is a real number larger than 0 but smaller than 2 and which contains Si--H bond, said solid silica derivative being able to be easily produced in a high yield by subjecting to hydrolysis-condensation an alkoxysilane represented by the mean general formula H.sub.n --Si(OR.sup.0).sub.4-n in which R.sup.0 represents an alkyl group having 1 to 4 carbon atoms, plural R.sup.0 groups may be the same as or different from one another and n is a real number greater than 0 but smaller than 2, using water in an amount of (4-n)/2 moles or more per mole of the alkoxysilane at a pH of 10.5 or less.