Abstract: Hybrid mesoporous molecular sieve silica compositions which have intergrown wormhole domains and lamellar or hexagonal domains and prepared from mixtures of water soluble silicate precursors and amine surfactant templates through a neutralization reaction are described. The silica compositions are stable above 600° C.
Type:
Application
Filed:
January 18, 2001
Publication date:
May 2, 2002
Applicant:
Board of Trustees operating Michigan State University
Inventors:
Thomas J. Pinnavaia, Thomas R. Pauly, Seong-Su Kim
Abstract: The present invention relates to a novel family of inorganic solids with a narrow and calibrated mesopore distribution which are agglomerated with a binder; these solids can advantageously be used as adsorbents for the industrial separation of gas-phase compounds having different boiling points.
Abstract: A method for producing a silicon single crystal, wherein, when a silicon single crystal is grown by the Czochralski method, the crystal is pulled with such conditions as present in a region defined by a boundary between a V-rich region and an N-region and a boundary between an N-region and an I-rich region in a defect distribution chart showing defect distribution which is plotted with D [mm] as abscissa and F/G [mm2/° C.·min] as ordinate, wherein D represents a distance between center of the crystal and periphery of the crystal, F/G [mm/min] represents a pulling rate and G [° C./mm] represents an average temperature gradient along the crystal pulling axis direction in the temperature range of from the melting point of silicon to 1400° C., and time required for crystal temperature to pass through the temperature region of from 900° C. to 600° C.
Abstract: A method of preparing mesoporous silica from a reaction mixture comprising a mineral acid such as HCl, an inorganic oxide source such as tetraethoxysilane, a surfactant such as cetyltrimethlyammonium bromide and water. The reaction mixture is mixed, e.g., by stirring or sonication, until sufficiently polymerized that mesostructured silica may be formed by a subsequent heating step, as indicated by the reaction mixture becoming opaque. This mixing is typically performed at room temperature for about 30-70 minutes. Then, the reaction mixture is heated in a pressurized vessel at a time, temperature and pressure sufficient to form mesostructured silica, e.g., at 60 to 230° C. for 15 to 80 minutes. Finally, mesoporous silica is recovered by filtering, drying and calcining in a furnace having a temperature in the range of 400 to 600° C. in air for at least 6 hours.
Type:
Grant
Filed:
August 20, 1999
Date of Patent:
January 1, 2002
Assignee:
The University of Vermont and State Agricultural
College
Abstract: An inorganic polymeric aluminosilicate material and a method for preparing the same, are disclosed. Instead of having a fibrous structure, the material has a structure consisting of spindles with a length in the range of from 10 to 100 &mgr;m and a width in the range of from 2 to 20 &mgr;m. This polymeric alumino-silicate can be used for the production of antistatic layers.
Type:
Application
Filed:
June 21, 2001
Publication date:
November 29, 2001
Inventors:
Jeannine Rigola, Olivier J. Poncelet, Didier J. Martin
Abstract: The present invention relates to stevensite or kerolite type trioctahedral phyllosilicates 2:1 containing fluorine, fluorinated in synthesis in an acid medium and modified post-synthesis to bring about Si/Al and/or Mg/Al substitutions which impart acid properties to the solid. These phyllosilicates may be incorporated in the composition of catalysts used to convert hydrocarbons, in particular for hydrocracking.
Type:
Application
Filed:
December 26, 2000
Publication date:
November 29, 2001
Applicant:
Institute Francaise Du Petrole
Inventors:
Sylvie Lacombe, Veronique Schlussel, Jacques Baron, Ronan Le Dred
Abstract: A process for the preparation of mesostructured molecular sieve silicas from inorganic silicon precursors and polyoxyethylene oxide based polymers is described. The silicas are stable upon calcination to 600° to 800° C. The silicas are useful in refining processes.
Type:
Application
Filed:
April 13, 2001
Publication date:
November 22, 2001
Applicant:
Board of Trustees Operating Michigan State Univ.
Inventors:
Thomas J. Pinnavaia, Thomas R. Pauly, Seong-Su Kim
Abstract: There is provided a seed crystal having a strength that the seed crystal is not broken even when the heavy single crystal is produced. The seed crystal is a seed crystal used for producing a single crystal according to Czochralski method wherein a relation between a sectional area of the seed crystal S (mm2) and a weight W (kg) of the single crystal to be pulled is represented by the formula: S>W. The single crystal is produced using the seed crystal. Furthermore, the single crystal is pulled with conforming a sectional area S (mm2) of a seed crystal and a weight W (kg) of a single crystal to be pulled to the formula: S>W.
Abstract: A single crystal silicon wafer with a back surface free of an oxide seal and substantially free of a chemical vapor deposition process induced halo and an epitaxial silicon layer on the front surface, the epitaxial layer is characterized by an axially symmetric region extending radially outwardly from the central axis of the wafer toward the circumferential edge of the wafer having a substantially uniform resistivity, the radius of the axially symmetric region being at least about 80% of the length of the radius of the wafer.
Type:
Application
Filed:
December 29, 2000
Publication date:
November 8, 2001
Inventors:
Michael J. Ries, Charles Chiun-Chieh Yang, Robert W. Standley
Abstract: In case of epitaxially growing a single crystal silicon layer by catalytic CVD on a material layer in lattice alignment with single crystal silicon, i.e. a substrate of single crystal silicon, sapphire, spinel, or the like, the total pressure of the growth atmosphere is maintained in the range from 1.33×10−3 Pa to 4 Pa at least in the initial period of the epitaxial growth, or alternatively, partial pressure of oxygen and moisture in the growth atmosphere is maintained in the range from 6.65×10−10 to 2×10−6 Pa at least in the initial period of the epitaxial growth. Thus, the maximum oxygen concentration of the epitaxially grown single crystal silicon layer becomes not higher than 3×1018 atoms/cm−3 at least in a portion with the thickness of 10 nm from the boundary with the substrate 4. It is thus ensured to epitaxially grow a high-quality single crystal silicon layer at a lower temperature than that of existing CVD.
Abstract: The invention pertains to a process for preparing a synthetic clay mineral which comprises silicon, aluminium aluminum, and at least one octahedron ion, which clay mineral has a total content of sodium and potassium of less than 0.5 wt.
Abstract: The invention relates to an acidic silicoaluminate solid that has a microporous zeolitic phase that is characterized by at least one infrared band between 400-1600 cm-1, an organized mesoporosity that is characterized by the presence of at least one X-diffraction line between 20-100 Å, a silica/alumina molar ratio of between 5-250 and an acidity that is measured by infrared analysis via an area of the band at about 1545 cm-1 at least equal to 50 g of dry solid.
Type:
Application
Filed:
December 14, 2000
Publication date:
October 18, 2001
Inventors:
Sylvie Lacombe, David Marseault, Philippe Caullet, Henri Kessler, Eric Benazzi, Alexandre Jouve
Abstract: A composition of matter is provided including an inorganic porous material having wall portions defining mesopore-sized channels having a mean diameter of between about 15 Å and about 100 Å and a narrow diameter distribution of less than or equal to about 30 Å, the material having a void volume from the mesopore-sized channels of at least about 0.1 cc/g and a surface area of at least about 500 m2/g and having a number of hydroxyl groups of at least about 1.5 mmol of hydroxyl groups per gram of material, and exhibiting thermal and hydrothermal stability at temperatures up to about 500° C. Catalytic materials incorporating aluminum and other active metals, as well as a process for preparing the composition, are also disclosed.
Type:
Grant
Filed:
July 29, 1999
Date of Patent:
October 9, 2001
Assignee:
Intevep, S.A.
Inventors:
Juan Lujano, Jose Carrazza, Norma Valencia de Zapata
Abstract: An inorganic polymeric aluminosilicate material and a method for preparing the same, are disclosed. Instead of having a fibrous structure, the material has a structure consisting of spindles with a length in the range of from 10 to 100 &mgr;m and a width in the range of from 2 to 20 &mgr;m. This polymeric aluminosilicate can be used for the production of antistatic layers.
Type:
Grant
Filed:
July 15, 1998
Date of Patent:
October 2, 2001
Assignee:
Eastman Kodak Company
Inventors:
Jeannine Rigola, Olivier J. Poncelet, Didier J. Martin
Abstract: Disclosed are silicoaluminophosphates (SAPOs) having unique silicon distributions and high catalytic cracking activity, a method for their preparation and their use as FCC catalysts. More particularly, the new SAPOs have a high silica:alumina ratio and favorable Si atom distribution. The new SAPOs may have a small crystal size and may be synthesized from a single- phase synthesis solution.
Type:
Grant
Filed:
May 20, 1999
Date of Patent:
September 25, 2001
Assignee:
Exxon Mobil Chemical Patents Inc.
Inventors:
Karl G. Strohmaier, David E. W. Vaughan
Abstract: A material with high surface area can be obtained through the partial or total removal of CaO and MgO by acid leaching of blast furnace slag. This is accomplished by an improved process for selective leaching of blast furnace slag and other solid solution materials by control of temperature during leaching, rate of addition of acid, type of the acid, concentration of the acid, and concentration of the slag in the slurry. When these variables are controlled as disclosed a hierarchy of dissolution occurs. The hierarchy begins with MgO, progresses to CaO, and is followed by A12O3, and the rate of acid addition is slow and controlled so that alumina does not dissolve (thereby depriving the remaining silica has no acid sites or catalytic activity). By invoking the hierarchy one gains selectivity, and this can be used to convert blast furnace slag to a material with high surface area which may have applications as an absorbent could be economically feasible.
Abstract: In growing silicon single crystals by the CZ method, the cooling rate in the 1150-1080° C. temperature zone (defect-forming temperature range) where the grown-in defects are formed is set at more than 2.0° C./min to manufacture single crystals having an as-grown LSTD density of larger than 3.0×106/cm3 or a FPD density of larger than 6.0×105/cm3. As this single crystal has a small defect size, thus the dissolution rate of the defects increases by the heat treatment in a non-oxidizing atmosphere containing a hydrogen gas, so the effect of the hydrogen heat treatment can extend to the depth more than 3 &mgr;m from the wafer surface.
Abstract: P-type zeolite having the oxide formula M2/nAl2O3 (1.8-2.66) SiO2 y H2O and having a Calcium Binding Capacity of between 100 and 145 mg/g, preferably between 110 and 140 and a Calcium uptake rate of between 12 and 100 seconds, preferably below 50 seconds can be prepared from metakaolin.
Abstract: The present invention provides a method for the homogenous and highly efficient synthesis of an aluminosilicate material that can be used for adsorbents, deodorants, catalyst carriers, humidity adjustors, and the like, and relates to a method for manufacturing spherical hollow silicate clusters, comprising steps of mixing a solution of a silicon compound and a solution of an aluminum compound or transition metal compound, each with a solution concentration of 10-1000 mmol, rapidly or simultaneously at a rate of 1-10,000 mL/min, removing a salt formed as a by-product, and then subjecting the mixture to hydrothermal synthesis to yield the silicate clusters.
Type:
Grant
Filed:
February 11, 1998
Date of Patent:
July 3, 2001
Assignee:
Agency of Industrial Science and Technology
Abstract: The present invention provides a process for treating sodium aluminosilicate which includes adding a calcium compound to sodium aluminosilicate; thermally treating the mixture of the sodium aluminosilicate and the calcium compound; and eluting the thermally-treated product with water or an aqueous solution to thereby solubilize a sodium component of the sodium aluminosilicate, recover sodium, and obtain a useful product containing sodium in very small amounts. The elution percentage of sodium can be increased by optimizing heating and elution conditions.
Abstract: The present invention relates to a process for the manufacture of high-purity alumino-silicates which are dispersible in aqueous and/or aqueous-acidic media by hydrolysis of aluminium compounds and silicic acid compounds and hydrothermal treatment.
Type:
Grant
Filed:
August 19, 1999
Date of Patent:
June 12, 2001
Assignee:
RWE-DEA Aktiengesellschaft fuer Mineraloel und Chemie
Inventors:
Andrea Brasch, Klaus Diblitz, Arnold Meyer
Abstract: An amorphous potassium aluminosilicate filtration media which may be mixed with activated carbon filters water to remove oxygen, chlorines, hardness, alkalinity, ammonia, hydrogen, hydrogen sulfide, sodium sulfite and other contaminants. The particular sodium aluminosilicate is a porous amorphous material formed under ultraviolet light or sunlight to produce pore sizes of 60 Å to 250 Å at ambient temperatures (20° C.-35° C.) and low relative humidity (5%-20%). The media is initially formed as a microporous primarily amorphous gel containing Na2O, Al2O3, SiO2 and H2O. The sodium therein is displaced by potassium, whereby the filter removes impurities from water without introducing sodium. The potassium aluminosilicate may be a second stage filter to a first stage filter composed of a strong base anion media charged with potassium carbonate and/or bicarbonate.
Abstract: A process for making a calcined, oxide material by at least partially delaminating a swollen, layered oxide material prior to calcination, and the product thereof having an increased active surface area that corresponds to an adsorption capacity for 1,3,5-trimethylbenzene of at least 0.50 mmol/g at a temperature of 42° C. and a pressure of 173.3 Pa. The calcined, oxide material retains a porous shape although non-pillared.
Abstract: A process for the preparation of an amorphous alumino-silicate derivative which involves reacting a solid corresponding starting material with MOH where M is alkali metal or ammonium cation. The solid corresponding starting material may be selected from montmorillonite, kaolin, natural zeolite (e.g., clinoliptolite/heulandite) as well as illite, palygorskite and saponite and additional reactant MX wherein X is halide may be utilized in conjunction with MOH. The invention also includes alumino-silicate derivatives of the general formula MpAlqSi2Or(OH)sXt.uH2O as well as alumino-silicate derivatives of the general formula MpAlqSi2Or(OH)s.uH2O.
Type:
Grant
Filed:
April 14, 1997
Date of Patent:
April 17, 2001
Assignee:
The University of Queensland
Inventors:
Balbir Singh, Ian Donald Richard Mackinnon, David Page
Abstract: The formation of new materials in the form of alumino-silicate derivatives from 2:1 layer clay materials which are obtained by the chemical modification of 2:1 layer clay minerals by reaction with a salt having the formula MX wherein M is ammonium ion or alkali metal cation and X is a halide. The new materials have the following characteristics: (a) an amorphous x-ray diffraction signal manifest as a broad hump using x-ray powder diffraction between 22° and 32° 2&thgr; using CuK&agr; radiation; and (b) the presence of primarily tetrahedrally coordinated aluminum.
Type:
Grant
Filed:
April 14, 1997
Date of Patent:
March 13, 2001
Assignee:
The University of Queensland
Inventors:
Balbir Singh, Ian Donald Richard MacKinnon, David Page
Abstract: Process for the preparation of a mesoporous, crystalline, acidic molecular sieve comprising the successive steps of (a) preparing an aqueous mixture comprising a silicon source, a fluorine source, and an organic template at a temperature in the range of at most 90° C. such that crystallization starts; (b) adjusting the pH of the solution to such value in the range of from about 5.0 to about 12.5 that a precipitate is formed; (c) recovering the precipitate; and (d) calcining the precipitate to obtain the mesoporous, crystalline, acidic molecular sieve, wherein an aluminum source is added in one or more of steps (a) and (b) and/or between steps (c) and (d) in such amount that after addition of all aluminum source the Si/Al atomic ratio is at least about 3.
Type:
Grant
Filed:
July 12, 1999
Date of Patent:
February 20, 2001
Assignee:
Shell Oil Company
Inventors:
Jean-Louis Guth, Laurent Georges Huve, Anne-Claude Voegtlin
Abstract: A process for the production of a synthetically produced bentonite-type inorganic microparticle. The synthetic microparticle produced according to the process of the present invention is particularly useful in papermaking processes where retention, water drainage, sheet formation and tangible cost saving opportunities are important.
Abstract: A method of producing a mesoporous silica material, including reacting, with stirring, a liquid mixture containing a tetraalkyl orthosilicate, a linear alkylamine, an inorganic acid and water, and drying and thermally treating the thus obtained solid product, wherein the amounts of the inorganic acid, alkylamine and water are 0.05-0.6 mol, 0.2-1.0 mol and 10-100 mol, respectively, per mol of the tetraalkyl orthosilicate. Mesoporous silica hard spheres having an average pore diameter of 1.5-4 nm and a volume average diameter of 40-80 &mgr;m. The mesoporous silica hard spheres may contain metal components other than silica.
Type:
Grant
Filed:
October 13, 1998
Date of Patent:
January 16, 2001
Assignee:
Director-General of Agency of Industrial Science and
Technology