Crystalline Patents (Class 423/328.2)
  • Patent number: 10392310
    Abstract: The porous plate-shaped filler aggregate includes a plurality of the porous plate-shaped fillers. The porous plate-shaped fillers have a uniform plate shape with an aspect ratio of 3 or more, a minimum length of 0.1 to 50 ?m, a porosity of 20 to 99%, and the deviation of the maximum length among a plurality of the porous plate-shaped fillers, which is obtained by the following formula, is 10% or less. Deviation of the maximum length (%)=standard deviation of the maximum length/average value of the maximum length×100 (Here, ‘maximum length’ is the longest length when the porous plate-shaped fillers are held between a pair of parallel planes.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: August 27, 2019
    Assignee: NGK Insulators, Ltd.
    Inventors: Akinobu Oribe, Hiroharu Kobayashi, Takahiro Tomita, Shinsaku Maeda, Yasutaka Awakura
  • Patent number: 10385801
    Abstract: In a heat-insulation film, porous plate fillers are dispersed in a matrix to bond the porous plate fillers. The porous plate filler includes plates having an aspect ratio of 3 or more, a minimum length of 0.1 to 50 ?m and a porosity of 20 to 90%. In the heat-insulation film, a volume ratio between the porous plate fillers and the matrix is from 50:50 to 95:5. In the heat-insulation film in which the porous plate fillers are used, a length of a heat transfer path increases and a thermal conductivity can be decreased, as compared with a case where spherical or cubic fillers are used.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: August 20, 2019
    Assignee: NGK INSULATORS, LTD.
    Inventors: Hiroharu Kobayashi, Takahiro Tomita, Akinobu Oribe
  • Patent number: 10259717
    Abstract: A new crystalline aluminosilicate zeolite comprising a MTT framework has been synthesized that has been designated UZM-53. This zeolite is represented by the empirical formula: M+mRrAl1?xExSiyOz where M represents sodium, potassium or a combination of sodium and potassium cations, R is the organic structure directing agent or agents derived from reactants R1 and R2 where R1 is diisopropanolamine and R2 is a chelating diamine, and E is an element selected from the group consisting of gallium, iron, boron and mixtures thereof. Catalysts made from UZM-53 have utility in various hydrocarbon conversion reactions such as oligomerization.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: April 16, 2019
    Assignee: UOP LLC
    Inventors: Christopher P. Nicholas, Mark A. Miller, Lisa M. Knight, Susan M. Wojnicki
  • Patent number: 9988585
    Abstract: A method for producing a base oil for lubricant oils comprising: a first step of hydrocracking a stock oil having a content percentage of a heavy matter of 80% by mass or more so that a crack per mass of the heavy matter is 20 to 85% by mass, to obtain a hydrocracked oil comprising the heavy matter and a hydrocracked product thereof, a second step of fractionating the hydrocracked oil into a base oil fraction comprising the hydrocracked product and a heavy fraction comprising the heavy matter and being heavier than the base oil fraction, respectively, a third step of isomerization dewaxing the base oil fraction from the fractionation in the second step to obtain a dewaxed oil, wherein the heavy fraction from the fractionation in the second step is returned to the first step as a part of the stock oil.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: June 5, 2018
    Assignee: JX NIPPON OIL & ENERGY CORPORATION
    Inventors: Kazuaki Hayasaka, Yoshiyuki Nagayasu, Marie Iwama, Mayumi Yokoi, Tomohisa Hirano
  • Patent number: 9981879
    Abstract: A process for producing a ceramic material including providing an aqueous solution comprising at least one transition metal ion and one or more further transition metal ion and/or one or more additional ion; adding to the aqueous solution a quaternary ammonium or phosphonium hydroxide comprising at least one alkyl group containing about 8 or more carbon atoms to form a combined aqueous solution; mixing the combined aqueous solution to form a gel; transferring the formed gel to a furnace; and heating the formed gel to a temperature sufficient for a time sufficient to calcine the gel to form a solid ceramic material. The process in accordance with the present invention provides an improved ceramic material, in some embodiments of which is suitable for use in the cathode material of a lithium ion battery.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: May 29, 2018
    Assignee: SACHEM, Inc.
    Inventor: Jianjun Hao
  • Patent number: 9315921
    Abstract: A high heat-resistant member includes a graphite substrate including isotropic graphite and a carbide coating film including a carbide, such as tantalum carbide, and covering a surface of the graphite substrate, the carbide coating film having a randomly oriented isotropic grain structure in which crystallites having a size indexed by a full width at half maximum of a diffraction peak of an X-ray diffraction pattern of not more than 0.2° from (111) planes are accumulated at substantially random. The orientation of the carbide coating film is determined by whether degree of orientation (F) in any Miller plane calculated based on an XRD pattern using the Lotgering method is within a range from ?0.2 to 0.2.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: April 19, 2016
    Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
    Inventors: Daisuke Nakamura, Akitoshi Suzumura, Keisuke Shigetoh
  • Patent number: 9190268
    Abstract: A method for producing a Ga-containing group III nitride semiconductor having reduced threading dislocation is disclosed. A buffer layer in a polycrystal, amorphous or polycrystal/amorphous mixed state, comprising AlGaN is formed on a substrate. The substrate having the buffer layer formed thereon is heat-treated at a temperature higher than a temperature at which a single crystal of a Ga-containing group III nitride semiconductor grows on the buffer layer and at a temperature that the Ga-containing group III nitride semiconductor does not grow, to reduce crystal nucleus density of the buffer layer as compared with the density before the heat treatment. After the heat treatment, the temperature of the substrate is decreased to a temperature that the Ga-containing group III nitride semiconductor grows, the temperature is maintained, and the Ga-containing group III nitride semiconductor is grown on the buffer layer.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: November 17, 2015
    Assignee: TOYODA GOSEI CO. LTD.
    Inventors: Koji Okuno, Takahide Oshio, Naoki Shibata, Hiroshi Amano
  • Patent number: 9056794
    Abstract: The present invention is drawn to a lithia alumina silica material that exhibits a low CTE over a broad temperature range and a method of making the same. The low CTE of the material allows for a decrease in microcracking within the material.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: June 16, 2015
    Inventors: Ivar Reimanis, Subramanian Ramalingam
  • Patent number: 8980784
    Abstract: Silicon-aluminum mixed oxide powder having a weight ratio of (Al2O3/SiO2)ttl in the total primary particle of from 0.003 to 0.05, a weight ratio (Al2O3/SiO2)surface of the primary particles in a surface layer having a thickness of about 5 nm which is less than in the total primary particle and a BET surface area of from 50 to 250 m2/g. It is prepared by igniting one or more silicon compounds selected from the group consisting of CH3SiCl3, (CH3)2SiCl2, (CH3)3SiCl and (n-C3H7)SiCl3, a hydrolysable and oxidizable aluminum compound, at least one fuel gas and air and burning the flame into a reaction chamber, subsequently separating the solid from gaseous materials and subsequently treating the solid with water vapor. The silicon-aluminum mixed oxide powder can be used as catalyst.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: March 17, 2015
    Assignee: Evonik Degussa GmbH
    Inventors: Christian Schulze Isfort, Horst-Werner Zanthoff, Thomas Quandt, Christian Boeing
  • Publication number: 20140327340
    Abstract: The present invention has an object to provide a piezoelectric material that endures high temperatures, the resources of raw materials of which are abundant, and that is stably suppliable. Disclosed is a piezoelectric element, including: a piezoelectric member having a surface for receiving external stress and a side surface that is perpendicular to the surface for receiving external stress; and at least one pair of a first electrode and a second electrode that are placed on the side surface, the first electrode being provided so as to separate from the second electrode. The piezoelectric member is preferably cut out from a piezoelectric material that includes gehlenite (Ca2Al2SiO7) in a predetermined crystal orientation. The piezoelectric member utilizes a transverse piezoelectric effect, and is preferably a (XYt) 45°-cut piece. The electrodes are preferably provided on surfaces that are parallel to the YZ plane.
    Type: Application
    Filed: May 2, 2013
    Publication date: November 6, 2014
    Applicants: Sakai Chemical Industry Co., Ltd., Energy Storage Materials LLC
    Inventors: Energy Storage Materials LLC, Sakai Chemical Industry Co., Ltd.
  • Publication number: 20140256866
    Abstract: This invention relates to megakalsilite platelets, methods of hydrothermally forming said platelets and the megakalsilite platelets obtainable via the disclosed hydrothermal method. More specifically the disclosure describes an improved hydrothermal synthesis of megakalsilite platelets, which are suitable as platelet for interference pigments, and in barrier and flame retardant applications.
    Type: Application
    Filed: March 11, 2014
    Publication date: September 11, 2014
    Inventors: Meaghan Clark McGuire, Ivor Bull, Geoffrey Mark Johnson
  • Patent number: 8771552
    Abstract: A group III nitride crystal substrate is provided in which a uniform distortion at a surface layer of the crystal substrate represented by a value of |d1 ?d2 |/d2 obtained from a plane spacing d1 at the X-ray penetration depth of 0.3 ?m and a plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 1.9 ×10?3, and the main surface has a plane orientation inclined in the <10-10> direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.
    Type: Grant
    Filed: July 16, 2010
    Date of Patent: July 8, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiji Ishibashi, Yusuke Yoshizumi
  • Publication number: 20140138583
    Abstract: The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M1 other than the metal element M, a tetravalent element M2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr3Al3Si13O2N21, but the chemical bond lengths of M1-N and M2-N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr3Al3Si13O2N21, respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.
    Type: Application
    Filed: January 23, 2014
    Publication date: May 22, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yumi FUKUDA, Hironori ASAI
  • Publication number: 20140097385
    Abstract: The invention relates to an inorganic scintillator material of formula Lu(2-y)Y(y-z-x)CexMzSi(1-v)M?vO5, in which: M represents a divalent alkaline earth metal and M? represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1. In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.
    Type: Application
    Filed: September 27, 2013
    Publication date: April 10, 2014
    Applicant: SAINT-GOBAIN CRISTAUX ET DETECTEURS
    Inventors: Bernard FERRAND, Bruno VIANA, Ludivine PIDOL, Pieter DORENBOS
  • Publication number: 20140076568
    Abstract: Embodiments of the invention relate to methods for making and compositions including aqueous alkali aluminosilicates used for conformance. The aqueous alkali aluminosilicates provide similar reaction characteristics of alkali silicates, an in addition provide enhanced conformance properties due to their ability to crystallize.
    Type: Application
    Filed: September 9, 2013
    Publication date: March 20, 2014
    Inventors: Michael J. McDonald, Neil Miller, Janice Hamilton
  • Patent number: 8603425
    Abstract: The invention provides a method for fabricating an exfoliated inorganic layered material. The method includes: providing a homogeneous precursor solution, wherein the homogeneous precursor solution includes a titanium derivatives solution or a silane derivatives solution; adding an inorganic layered material into the homogeneous precursor solution to form a sol; coagulating the sol by a hydrothermal method to obtain a wet gel; and washing, drying and calcining the wet gel to obtain an exfoliated inorganic layered material.
    Type: Grant
    Filed: May 5, 2011
    Date of Patent: December 10, 2013
    Assignees: Chung Yuan Christian University, Frank & Associates Plastic Co., Ltd.
    Inventors: Tsung-Yen Tsai, Chien-Hsiang Hsieh, Chien-Lin Yeh, Chung-Chih Lin
  • Patent number: 8540957
    Abstract: The present invention provides a method for preparing microtubular halloysite nanopowders by cutting halloysite nanotubes at a high pressure, microtubular halloysite nanopowders prepared by the method, and a cosmetic composition comprising the microtubular halloysite nanopowders. According to the method of the present invention, it is possible to prepare the halloysite nanopowders with a tubular shape using natural halloysite and effectively select a halloysite nanopowder having a desired shape. The microtubular halloysite nanopowders can be used in many industrial fields and used as a container or a carrier for nanoparticles or organic materials such as drugs, air fresheners, cosmetics, agricultural chemical materials, etc.
    Type: Grant
    Filed: November 28, 2010
    Date of Patent: September 24, 2013
    Assignee: Korea Institute of Geoscience and Mineral Resources
    Inventors: Yong Jae Suh, Young Mi Heo, Dae Sup Kil, Sung Wook Cho
  • Patent number: 8529868
    Abstract: ITQ-40 (INSTITUTO DE TECNOLOGÍA QUÍMICA number 40) is a new crystalline microporous material with a framework of tetrahedral atoms connected by atoms capable of bridging the tetrahedral atoms, the tetrahedral atom framework being defined by the interconnections between the tetrahedrally coordinated atoms in its framework. ITQ-40 can be prepared in silicate compositions with an organic structure directing agent. It has a unique X-ray diffraction pattern, which identifies it as a new material.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: September 10, 2013
    Assignee: Exxonmobil Research and Engineering Company
    Inventors: Karl G. Strohmaier, Avelino Corma, Maria Jose Diaz, Fernando Rey, Douglas L. Dorset, Stuart L. Soled
  • Patent number: 8399578
    Abstract: In a method of synthesizing a silicoaluminophosphate molecular sieve having 90+% CHA framework-type character, a reaction mixture is prepared comprising sources of water, silicon, aluminum, and phosphorus, as well as an organic template. In one aspect, the reaction mixture is heated at more than 10° C./hour to a crystallization temperature and is retained at the crystallization temperature or within the crystallization temperature range for a crystallization time from 16 hours to 350 hours to produce the silicoaluminophosphate molecular sieve. In another aspect, the reaction mixture is heated at less than 10° C./hour to a crystallization temperature from about 150° C. to about 225° C. and is then retained there for less than 10 hours to produce the silicoaluminophosphate molecular sieve. The molecular sieve can then be recovered from the reaction mixture and, preferably, used in a hydrocarbon conversion process, such as oxygenates to olefins.
    Type: Grant
    Filed: August 20, 2012
    Date of Patent: March 19, 2013
    Assignee: Exxonmobil Chemical Patents Inc.
    Inventors: Machteld M. Mertens, Stephen N. Vaughn
  • Patent number: 8287779
    Abstract: The invention relates to a fire retardant product. The invention comprises using at least one aluminosilicated polymer of the imogolite type or allophane type as a fire retardant. The invention can particularly be used in the field of fire retardant products.
    Type: Grant
    Filed: February 9, 2009
    Date of Patent: October 16, 2012
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternative
    Inventor: Olivier Poncelet
  • Patent number: 8268277
    Abstract: In a method of synthesizing a silicoaluminophosphate molecular sieve having 90+% CHA framework-type character, a reaction mixture is prepared comprising sources of water, silicon, aluminum, and phosphorus, as well as an organic template. In one aspect, the reaction mixture is heated at more than 10° C./hour to a crystallization temperature and is retained at the crystallization temperature or within the crystallization temperature range for a crystallization time from 16 hours to 350 hours to produce the silicoaluminophosphate molecular sieve. In another aspect, the reaction mixture is heated at less than 10° C./hour to a crystallization temperature from about 150° C. to about 225° C. and is then retained there for less than 10 hours to produce the silicoaluminophosphate molecular sieve. The molecular sieve can then be recovered from the reaction mixture and, preferably, used in a hydrocarbon conversion process, such as oxygenates to olefins.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: September 18, 2012
    Assignee: ExxonMobil Chemical Patents Inc.
    Inventors: Machteld M. Mertens, Stephen N. Vaughn
  • Patent number: 8158103
    Abstract: A new family of crystalline aluminosilicate zeolites has been synthesized. These zeolites are represented by the empirical formula. Mmn+Rr+Al(1?x)ExSiyOz where M represents a combination of potassium and sodium exchangeable cations, R is a singly charged organoammonium cation such as the propyltrimethylammonium cation and E is a framework element such as gallium. These zeolites are similar to MWW but are characterized by unique x-ray diffraction patterns and compositions and have catalytic properties for carrying out various hydrocarbon conversion processes.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: April 17, 2012
    Assignee: UOP LLC
    Inventors: Jaime G. Moscoso, Deng-Yang Jan
  • Patent number: 8158105
    Abstract: A new family of crystalline aluminosilicate zeolites has been synthesized. These zeolites are represented by the empirical formula. Mmn+Rr+Al(1-x)ExSiyOz where M represents a combination of potassium and sodium exchangeable cations, R is a singly charged organoammonium cation such as the propyltrimethylammonium cation and E is a framework element such as gallium. These zeolites are similar to MWW but are characterized by unique x-ray diffraction patterns and compositions and have catalytic properties for carrying out various hydrocarbon conversion processes.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: April 17, 2012
    Assignee: UOP LLC
    Inventors: Jaime G. Moscoso, Deng-Yang Jan
  • Publication number: 20120041125
    Abstract: The invention provides a method for fabricating an exfoliated inorganic layered material. The method includes: providing a homogeneous precursor solution, wherein the homogeneous precursor solution includes a titanium derivatives solution or a silane derivatives solution; adding an inorganic layered material into the homogeneous precursor solution to form a sol; coagulating the sol by a hydrothermal method to obtain a wet gel; and washing, drying and calcining the wet gel to obtain an exfoliated inorganic layered material.
    Type: Application
    Filed: May 5, 2011
    Publication date: February 16, 2012
    Inventors: Tsung-Yen TSAI, Chien-Hsiang Hsieh, Chien-Lin Yeh, Chung-Chih Lin
  • Patent number: 8025981
    Abstract: Sodalite is synthesized in the presence of a stoichiometric quantity of Permanganate ion. After thorough washing to remove trace salts the resulting pigment may be encapsulated with amorphous silica using the Iler process. The resulting pigment has enhanced acid stability and provides excellent corrosion protection on reactive metal substrates such as Aerospace Aluminum or Coil grade Hot-Dip Galvanized Steel.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: September 27, 2011
    Assignee: The Shepherd Color Company
    Inventor: Simon K. Boocock
  • Patent number: 7972437
    Abstract: Described herein are hollow nanocrystals having various shapes that can be produced by a simple chemical process. The hollow nanocrystals described herein may have a shell as thin as 0.5 nm and outside diameters that can be controlled by the process of making.
    Type: Grant
    Filed: October 12, 2004
    Date of Patent: July 5, 2011
    Assignee: The Regents of the University of California
    Inventors: A. Paul Alivisatos, Yadong Yin, Can Kerem Erdonmez
  • Patent number: 7922996
    Abstract: This invention relates to novel compositions of zeolites or microporous metallosilicates characterized by a continuous spatial distribution of the metal and silicon in the crystals and characterized by a crystal surface enriched in silicon relative to the internal part of the same crystals. This invention also relates to a synthesis method of producing these metallosilicates with spatial distribution of the constituting elements. These novel zeolitic compositions can be used in various hydrocarbon conversion reactions. The crystalline metallosilicates can be selected from the group consisting of aluminosilicates, gallosilicates, ferrosilicates, titanosilicates and borosilicates.
    Type: Grant
    Filed: November 25, 2005
    Date of Patent: April 12, 2011
    Assignee: Total Raffinage Marketing
    Inventors: Walter Vermeiren, Jean-Pierre Dath, Valérie Buono
  • Patent number: 7922995
    Abstract: This invention relates to novel compositions of zeolites or microporous metallosilicates characterized by a continuous spatial distribution of the metal and silicon in the crystals and characterized by a crystal surface enriched in silicon relative to the internal part of the same crystals. This invention also relates to a synthesis method of producing these metallosilicates with spatial distribution of the constituting elements. These novel zeolitic compositions can be used in various hydrocarbon conversion reactions. The crystalline metallosilicates can be selected from the group consisting of aluminosilicates, gallosilicates, ferrosilicates, titanosilicates and borosilicates.
    Type: Grant
    Filed: November 25, 2005
    Date of Patent: April 12, 2011
    Assignee: Total Raffinage Marketing
    Inventors: Walter Vermeiren, Jean-Pierre Dath, Valérie Buono
  • Patent number: 7914760
    Abstract: A silicoaluminophosphate molecular sieve is disclosed that comprises first and second intergrown phases of a CHA framework type and an AEI framework type, wherein said first intergrown phase has an AEI/CHA ratio of from about 5/95 to about 40/60 as determined by DIFFaX analysis, the second intergrown phase has an AEI/CHA ratio of about 30/70 to about as determined by DIFFaX analysis and said molecular sieve has a silica to alumina molar ratio (Si/Al2) from about 0.13 to about 0.24.
    Type: Grant
    Filed: October 8, 2009
    Date of Patent: March 29, 2011
    Assignee: ExxonMobil Chemical Patents Inc.
    Inventors: Machteld M. Mertens, An Verberckmoes, Marcel J. Janssen, Yun Feng Chang, Luc R. M. Martens, Stephen Neil Vaughn, Kenneth Ray Clem, Wilfried J. Mortier
  • Patent number: 7785554
    Abstract: A process for manufacturing a silicoaluminophosphate molecular sieve comprising at least one intergrown phase of AEI and CHA framework types, the process comprising the steps of (a) combining at least one silicon source, at least one phosphorus source, at least one aluminum source, and at least one structure-directing-agent (R) to form a mixture; and (b) treating the mixture at crystallization conditions sufficient to form the silicoaluminophosphate molecular sieve, wherein the mixture prepared in step (a) has a molar composition of: (n)SiO2/Al2O3/(m)P2O5/(x)R/(y)H2O wherein n ranges from about 0.005 to about 0.6, m ranges from about 0.6 to about 1.2, x ranges from about 0.5 to about 0.99, and y ranges from about 10 to about 40.
    Type: Grant
    Filed: May 30, 2006
    Date of Patent: August 31, 2010
    Assignee: ExxonMobil Chemical Patents Inc.
    Inventors: Machteld Maria Mertens, An Amandine Verberckmoes
  • Publication number: 20100215972
    Abstract: Mineral pigments (such as kaolin clay) having a high surface area and particle size in the nano scale range are provided which are useful in paper coating and filling, ink jet coating formulations, paint compositions, and as a filler in rubbers, plastics and polymers. These pigments are manufactured by intensive wet milling of a mineral composition which may have undergone prior dry grinding and then optionally subjecting the wet milled mineral composition to an acid treatment.
    Type: Application
    Filed: February 25, 2009
    Publication date: August 26, 2010
    Inventors: Prakash B. Malla, Siva Devisetti
  • Patent number: 7674367
    Abstract: The present invention relates to an iron-containing crystalline aluminosilicate, a hydrocracking catalyst comprising the same and a process for hydrocracking utilizing the catalyst, and employing the catalyst in hydrocracking for heavy oil results in easy production of great quality kerosene and gas oil having low contents of sulfur and nitrogen as well as increased production thereof.
    Type: Grant
    Filed: November 2, 2005
    Date of Patent: March 9, 2010
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuhiro Inamura, Hiroshi Iida, Yoshihiro Okazaki, Akira Iino
  • Patent number: 7662354
    Abstract: The present invention relates to use of an aluminosilicate particle for deodorization, wherein the aluminosilicate particle has the composition of: s M(1)xOy t M(2)2O.Al2O3 u SiO2 v RmQn w H2O, wherein M(1) is one or more members selected from the group consisting of Ag, Cu, Zn and Fe, M(2) is one or more members selected from the group consisting of Na, K and H, R is one or more members selected from the group consisting of Na, K, Ca and Mg, Q is one or more members selected from the group consisting of CO3, SO4, NO3, and Cl, s satisfies 0<s?3, and t satisfies 0?t?3, with proviso that s+t is from 0.5 to 3, and u satisfies 0.5?u?6, v satisfies 0<v?2, w satisfies w?0, x satisfies 1?x?2, y satisfies 1?y?3, m satisfies 1?m?2, and n satisfies 1?n?3, and wherein the aluminosilicate particle has a specific surface area of 1 m2/g or more and less than 70 m2/g.
    Type: Grant
    Filed: August 6, 2004
    Date of Patent: February 16, 2010
    Assignee: Kao Corporation
    Inventor: Kazuo Oki
  • Patent number: 7655207
    Abstract: An aluminum complex hydroxide salt having Al oxide octahedral layers and a divalent anion among the octahedral layers, wherein an aluminosilicate anion expressed by the following general formula (1), [NapAlqSirOz]2???(1) wherein p, q, r and z are positive numbers satisfying, 5?z?20, z=(p/2)+(3q/2)+2r+1, 0<p/q<1, 0.01?q/r?1 is, at least, contained as the divalent anion. The aluminum complex hydroxide salt can be favorably used as a compounding agent for resins, and exhibits excellent heat retaining property as well as excellent transparency particularly when it is mixed as a heat retaining agent into films for agricultural use.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: February 2, 2010
    Assignee: Mizusawa Chemicals, Ltd.
    Inventor: Madoka Minagawa
  • Patent number: 7648689
    Abstract: The invention is to provide a process for industrially advantageously producing InP fine particles having a nano-meter size efficiently in a short period of time and an InP fine particle dispersion, and there are provided a process for the production of InP fine particles by reacting an In raw material containing two or more In compounds with a P raw material containing at least one P compound in a solvent wherein the process uses, as said two or more In compounds, at least one first In compound having a group that reacts with a functional group of P compound having a P atom adjacent to an In atom to be eliminated with the functional group in the formation of an In-P bond and at least one second In compound having a lower electron density of In atom in the compound than said first In compound and Lewis base solvent as said solvent, and InP fine particles obtained by the process.
    Type: Grant
    Filed: March 10, 2006
    Date of Patent: January 19, 2010
    Assignee: Hoya Corporation
    Inventor: Shuzo Tokumitsu
  • Patent number: 7641734
    Abstract: A method of growing silicon single crystals with a [110] crystallographic axis orientation by the Czochralski method is provided according to which a silicon seed crystal doped with a high concentration of boron is used and an included angle of a conical part during shoulder section formation is maintained within a specified range. It is thereby possible to grow large-diameter and heavy-weight dislocation-free silicon single crystals with a diameter of 300 mm or more in a stable manner, without the fear of dropping the single crystal during pulling up. Therefore, the method can be properly utilized in producing silicon single crystals as semiconductor materials.
    Type: Grant
    Filed: April 2, 2008
    Date of Patent: January 5, 2010
    Assignee: Sumco Corporation
    Inventor: Shuichi Inami
  • Patent number: 7608145
    Abstract: Disclosed is a method of fabrication of high quality silicon single crystal at high growth rate. The method grows silicon single crystal from silicon melt by Czochralski method, wherein the silicon single crystal is grown according to conditions that the silicon melt has an axial temperature gradient determined according to an equation, {(?Tmax??Tmin)/?Tmin}×100?10, wherein ?Tmax is a maximum axial temperature gradient of the silicon melt and ?Tmin is a minimum axial temperature gradient of the silicon melt, when the axial temperature gradient is measured along an axis parallel to a radial direction of the silicon single crystal.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: October 27, 2009
    Assignee: Siltron Inc.
    Inventor: Hyon-Jong Cho
  • Patent number: 7605110
    Abstract: A ceramic body, a ceramic catalyst body, a ceramic catalyst body and related manufacturing methods are disclosed wherein a cordierite porous base material has a surface, formed with acicular particles made of a component different from that of cordierite porous base material, which has an increased specific surface area with high resistance to a sintering effect. The ceramic body is manufactured by preparing a slurry containing an acicular particle source material, preparing a porous base material, applying the slurry onto a surface of the porous base material and firing the porous base material, whose surface is coated with the slurry, to cause acicular particles to develop on the surface of the porous base material. A part of or a whole of surfaces of the acicular particles is coated with a constituent element different from that of the acicular particles.
    Type: Grant
    Filed: April 5, 2007
    Date of Patent: October 20, 2009
    Assignees: Denso Corporation, Nippon Soken, Inc.
    Inventors: Keiichi Yamada, Kazuhiko Koike, Katsumi Yoshida, Hideki Kita, Naoki Kondo, Hideki Hyuga
  • Patent number: 7588741
    Abstract: Cyclical batch processes for halogenation, such as chlorination, of minerals in a fixed bed using a plurality of cycles which include the steps of at least partially evacuating the bed, charging the bed with reactant gas, maintaining the reactant gas in the bed for a predetermined time, and exhausting reaction products under vacuum. Also disclosed is the chlorination of spodumene in its beta crystalline form produced by calcining spodumene in its naturally-occurring alpha crystalline form to preferentially extract lithium as lithium chloride.
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: September 15, 2009
    Inventors: Wendell E. Dunn, Jr., Jeffrey Van Jahnke
  • Publication number: 20090169890
    Abstract: Disclosed herein are calcined kaolins, having a GE brightness of at least about 89 and an Einlehner Abrasion value of not more than about 4.0 mg when measured at 43.5 krev and a solids content of 10%. Further disclosed herein are calcined kaolins, having a Hunter “a” value of less than 0.1 and an Einlehner Abrasion value of not more than about 4.0 mg when measured at 43.5 krev and a solids content of 10%. In addition, disclosed herein are methods of making the calcined kaolins and products comprising the calcined kaolins.
    Type: Application
    Filed: December 18, 2006
    Publication date: July 2, 2009
    Inventors: Robert J. Pruett, Ismail Yildirim
  • Patent number: 7528089
    Abstract: The present invention includes a microporous or mesoporous composition of matter in which the composition is formed continuously or semi-continuously in a heated reactor zone, including a rotary calciner or a rotary screw as a means for conveying the synthesis mixture, at a temperature between 200° C. and 500° C. with a residence time less than 24 hours. The reagents are solid and liquid reagents in which the solid reagents have a weight percent between 45% and 98% of the total reagents. The invention also includes a continuous or semi-continuous process for the hydrothermal manufacture of the microporous or mesoporous composition.
    Type: Grant
    Filed: October 15, 2004
    Date of Patent: May 5, 2009
    Assignee: ExxonMobil Research and Engineering Company
    Inventors: Ivy D. Johnson, Kirk D. Schmitt, Steven T. Ragomo, Stephen G. Casmer
  • Publication number: 20090081104
    Abstract: The present invention provides for the production of a single frit, dental porcelain, glass-ceramic containing small, uniformly dispersed, single leucite crystals of ellipsoidal habit and very uniform size.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 26, 2009
    Applicant: Den-Mat Holdings LLC
    Inventors: Robert Ibsen, Xiaohui Chen, Michael J. Cattell, Jacques V. Riodel, Thomas C. Chadwick
  • Patent number: 7442355
    Abstract: An indium phosphide substrate for semiconductor devices is obtained as follows. In order to have the direction of growth of the crystal in the <100> orientation, a seed crystal having a specified cross-sectional area ratio with the crystal body is placed at the lower end of a growth container. The growth container housing the seed crystal, indium phosphide raw material, dopant, and boron oxide is placed in a crystal growth chamber. The temperature is raised to at or above the melting point of indium phosphide. After melting the boron oxide, indium phosphide raw material, and dopant, the temperature of the growth container is lowered in order to obtain an indium phosphide monocrystal having a low dislocation density and a uniform dopant concentration on the wafer as well as in the depth direction.
    Type: Grant
    Filed: May 6, 2004
    Date of Patent: October 28, 2008
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Tomohiro Kawase
  • Patent number: 7422732
    Abstract: The present invention relates to new crystalline molecular sieve SSZ-74 prepared using a hexamethylene-1,6-bis-(N-methyl-N-pyrrolidinium)dication as a structure-directing agent, and its use in catalysts for synthesizing amines.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: September 9, 2008
    Assignee: Chevron U.S.A. Inc
    Inventors: Stacey I. Zones, Allen W. Burton, Jr.
  • Patent number: 7416714
    Abstract: The invention is directed to a process and method for forming synthetic hydroxysodalite from nepheline and feldspar and/or nepheline syenite. A caustic material such as a solution of sodium hydroxide is combined with the nepheline and feldspar and/or nepheline syenite to form the synthetic hydroxysodalite.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: August 26, 2008
    Assignee: Unimin Corporation
    Inventor: David D. Kragten
  • Patent number: 7390359
    Abstract: A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.
    Type: Grant
    Filed: December 19, 2006
    Date of Patent: June 24, 2008
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Michimasa Miyanaga, Koji Uematsu, Takuji Okahisa
  • Patent number: 7381392
    Abstract: The present invention relates to silicon feedstock for producing directionally solidified silicon ingots, thin sheets and ribbons for the production of silicon wafers for PV solar cells where the silicon feedstock contains between 0.2 and 10 ppma boron and between 0.1 and 10 ppma phosphorus distributed in the material. The invention further relates to directionally solidified silicon ingot or thin silicon sheet or ribbon for making wafers for solar cells containing between 0.2 ppma and 10 ppma boron and between 0.1 ppma and 10 ppma phosphorus distributed in the ingot, said silicon ingot having a type change from p-type to n-type or from n-type to p-type at a position between 40 and 99% of the ingot height or sheet or ribbon thickness and having a resistivity profile described by an exponential curve having a starting value between 0.4 and 10 ohm cm and where the resistivity value increases towards the type change point.
    Type: Grant
    Filed: January 12, 2004
    Date of Patent: June 3, 2008
    Assignee: Elkem AS
    Inventors: Erik Enebakk, Kenneth Friestad, Ragnar Tronstad, Cyrus Zahedi, Christian Dethloff
  • Patent number: 7378071
    Abstract: A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: May 27, 2008
    Assignee: Siltron Inc.
    Inventors: Hyon-Jong Cho, Cheol-Woo Lee, Hong-Woo Lee, Cheong Jin Soo, Kim Sunmi
  • Patent number: 7378076
    Abstract: The invention involves a process for production of macrostructures of a microporous material. The process is characterized by the fact that seeds formed in or introduced by ion exchange or adsorption to a porous organic ion exchanger with the desired size, shape and porosity are made to grow and form a continuous structure by further deposition of inorganic material from a synthesis solution under hydrothermal conditions. The organic ion exchanger can be eliminated by chemical destruction or dissolution and, in so doing, leaves behind an inorganic microporous structure with the size and shape of the employed organic ion exchanger.
    Type: Grant
    Filed: August 11, 2005
    Date of Patent: May 27, 2008
    Assignee: ExxonMobil Chemical Patents Inc.
    Inventors: Per Johan Sterte, Lubomira Borislavova Tosheva, Valentin Panov Valtchev
  • Patent number: 7374817
    Abstract: Disclosed is a transition-metal chalcogenide crystal having a topological configuration/structure. A micro-droplet of a chalcogen element, such as S, Se or Te, is condensed and circulated in suspended form in an atmosphere containing a Group IVb, Vb or VI transition metal element, such as Nb, Ta, Zr, Ti, Hf or W, together with the chalcogen element. Then, micro-whiskers of a transition metal chalcogenide formed in the atmosphere are attached onto a surface of the chalcogen-element micro-droplet by the action of a surface tension of the micro-droplet, and grown as a loop-shaped crystal wound around the surface of the micro-droplet to obtain a loop-shaped crystal having a twist of 0, ? or 2?. The crystal has a ribbon-like open or closed loop configuration. The transition-metal chalcogenide crystal with the topological loop-shaped microstructure can exhibit original properties peculiar to each transition-metal chalcogenide, and has applicability, for example, to a quantum device, such as SQUID.
    Type: Grant
    Filed: May 20, 2003
    Date of Patent: May 20, 2008
    Assignee: Japan Science and Technology Agency
    Inventors: Satoshi Tanda, Taku Tsuneta, Yoshitoshi Okajima, Katsuhiko Inagaki, Kazuhiko Yamaya, Noriyuki Hatakenaka