Abstract: Porous hexagonal, cubic, lamellar, wormhole, or cellular foam aluminosilicates, gallosilicates and titanosilicates derived from protozeolitic seeds or zeolite fragments using an organic porogen directing agent are described. The porous aluminosilicates optionally also can contain zeolite crystals depending upon the aging of the protozeolitic seeds. The silicon and aluminum, gallium or titanium centers in the structures are stable so that the framework of the structure does not collapse when heated in the presence of water or water vapor (steam). The steam stable compositions can be used as catalysts for hydrocarbon conversions, including the fluidized bed catalytic cracking and the hydrocracking of petroleum oils, and other reactions of organic compounds.

Abstract: Applicant has developed a method for predicting the structure of a zeolite including the cation positions and distributions. The method comprises using combinatorial minimization and molecular mechanics techniques. One important aspect of the technique is the bumping of two cations. Another aspect of the invention is predicting the adsorption isotherms of the invention using a biased-Grand Cononical Monte Carlo technique which contains electrostatic and dispersion interaction terms between gas molecules and the zeolite.

Abstract: The present invention provides a method for producing a solar cell comprising forming the solar cell from a CZ silicon single crystal wafer, wherein a CZ silicon single crystal wafer having an initial interstitial oxygen concentration of 15 ppma or less is used as the CZ silicon single crystal wafer; a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has an interstitial oxygen concentration of 15 ppma or less; and a solar cell produced from a CZ silicon single crystal wafer, wherein the CZ silicon single crystal wafer has a BMD density of 5×108/cm3 or less. Thus, there can be obtained a solar cell showing little fluctuation of characteristics.

Abstract: A wafer of the invention is a silicon wafer of 0.02 &OHgr;cm or less in resistivity for deposition of an epitaxial layer, and the number of crystal originated particles (COP) and the number of interstitial-type large dislocation loops (L/D) are respectively 0 to 10 per wafer. A wafer of the invention is an epitaxial wafer having an epitaxial layer being 0.1 &OHgr;cm or more in resistivity and 0.5 to 5 &mgr;m in thickness formed on this wafer by means of a CVD method. A wafer of the invention is OSF-free and hardly makes traces of COP and L/D appear on the surface of an epitaxial layer when the epitaxial layer is formed. By heat treatment in a semiconductor device manufacturing process after the epitaxial layer is formed, BMDs occur uniformly and highly in density in the wafer and a uniform IG effect can be obtained in the wafer.

Abstract: The present invention relates to a silicoaluminophosphate molecular sieve comprising at least one intergrown phase of molecular sieves having AEI and CHA framework types, wherein said intergrown phase has an AEI/CHA ratio of from about 5/95 to 40/60 as determined by DIFFaX analysis, using the powder X-ray diffraction pattern of a calcined sample of said silicoaluminophosphate molecular sieve. It also relates to methods for its preparation and to its use in the catalytic conversion of methanol to olefins.

Abstract: Disclosed is a method for reproducibly producing large size, single crystals in a crystal growth chamber. The method includes the steps of: (a) forming a plurality of smaller size tiles of single crystals of substantially the same crystal orientation as the desired large size, single crystal; (b) assembling the plurality of smaller tiles into a structure having a larger size while minimizing gapping between adjacent tiles; (c) placing the assembly of smaller tiles formed in step (b) into a growth chamber; and (d) through a growth reaction carried out in the growth chamber, forming a large size single crystal using the assembly of smaller tiles formed in step (b) as a seed crystal for the growth reaction.

Abstract: A family of crystalline aluminosilicate zeolites designated UZM-8HS and derived from UZM-8 have been synthesized. The aluminum content of the UZM-8HS is lower than that of the starting UZM-8 thus changing its ion exchange capacity and acidity.

Abstract: An aluminosilicate zeolite and substituted versions designated UZM-15 have been synthesized. These zeolites are prepared using an organo-ammonium cation as a template in which at least one organic group has at least 2 carbon atoms. An example of such a cation is diethyldimethyl-ammonium cation. The template can optionally comprise other organoammonium cations, alkali metals and alkaline earth metals. These UZM-15 materials can be dealuminated by various processes to provide UZM-15HS compositions. Both the UZM-15 and UZM-15HS compositions are useful as catalysts or catalyst supports in various process such as the conversion of cyclic hydrocarbons to non-cyclic hydrocarbons and olefin oligomerization.

Abstract: In the manufacture of a silicon single crystal by the Czochralski method, there is provided a seed crystal for use in the production of the silicon single crystal. This seed crystal is capable of preventing creation of a dislocation occurring during the immersion of the seed crystal in the molten silicon and withstanding the load of a silicon single crystal of great weight as well. There is also a method for the production of the seed crystal and a method for the production of a silicon single crystal which enables the ratio of elimination of dislocation to be increased.

Abstract: Mesoporous hexagonal, cubic or wormhole aluminosilicates derived from zeolite seeds using an ionic structure directing agent are described. The aluminum in the structures is stable so that the framework of the structures does not collapse when heated in the presence of water or water vapor (steam). The steam stable aluminosilicates can be used as acid catalysts for hydrocarbon conversions, including the fluidized bed catalytic cracking and the hydrocracking of petroleum oils, and other cracking of organic compounds.

Abstract: The invention is directed to a method of synthesizing aluminophosphate and silicoaluminophosphate molecular sieves and in particular to the synthesis of aluminophosphate and silicoaluminophosphate molecular sieves using N-methylethanolamine as template with or without a source of fluoride. The use of N-methylethanolamine as template results in good quality AlPO4 of CHA framework type and SAPO molecular sieves of CHA framework type with low levels of silicon in high yield.

Abstract: Applicants have synthesized a family of microporous aluminosilicate zeolites and substituted versions thereof which are identified as UZM-8. These new compositions can be prepared using either only one or more organoammonium cations, such as diethyldimethylammonium or ethyltrimethylammonium cations and optionally an alkali and/or an alkaline earth cation as structure directing agents. The UZM-8 compositions are described by an empirical formula of Mmn+Rrp+Al1-xExSiyOz and have a unique x-ray diffraction pattern.

Abstract: By using an InP single crystal substrate of the present invention in which the oxygen atom concentration is within the range of 1×1017 to 1×1018 atoms/cm3 for vapor phase epitaxial growth such as the MOCVD method, the occurrence of protrusions referred to as hillocks on the surface of the epitaxial layer formed on the substrate can be reduced, thereby allowing the providing of an InP single crystal substrate able to accommodate reduced thickness, multi-layering and enhanced function of the epitaxial layer.

Abstract: A method is disclosed for forming an epitaxial layer on a front side of a substrate formed of a monocrystalline material, using a chemical vapor deposition system. In this method, a plurality of gettering wafers formed of a gettering material are arranged in the CVD system, such that the front side of each substrate is facing one of the gettering wafers. Impurities present in the CVD system during formation of the epitaxial layer are gettered by the gettering wafers. Alternatively, a layer of a gettering material is deposited on a back side of each of the plurality of substrates, and the substrates are arranged such that the front side of each substrate is facing the backside of another of the substrates. In another embodiment, a layer of a gettering material is deposited on an interior surface of the CVD system. Impurities removed from the CVD system during epitaxial formation include oxygen, water vapor and other oxygen-containing contaminants.

Abstract: Mesoporous hexagonal, cubic, lamellar, wormhole, or cellular foam aluminosilicates, gallosilicates and titanosilicates derived from protozeolitic seeds using an ionic structure directing agent are described. The silicon and aluminum, gallium or titanium centers in the structures are stable so that the framework of the structure does not collapse when heated in the presence of water or water vapor (steam). The steam stable compositions can be used as catalysts for hydrocarbon conversions, including the fluidized bed catalytic cracking and the hydrocracking of petroleum oils, and other reactions of organic compounds.

Abstract: The invention relates to a sparingly soluble alkali metal silicate which comprises alkali metal phyllosilicate in finely divided form in a non-phyllosilicatic alkali metal silicate environment of the formula x MI2O.y SiO2, in which MI is an alkali metal and y/x (1.9 to 500): 1; a process for its preparation and its use in detergents and cleaners.

Abstract: A single crystal ceramic material for optical and optoelectronic applications is d, including a single crystal spinel having a general formula aAD·bE2D3, wherein A is selected from the group consisting of Mg, Ca, Zn, Mn, Ba, Sr, Cd, Fe, and combinations thereof, E is selected from the group consisting Al, In, Cr, Sc, Lu, Fe, and combinations thereof, and D is selected from the group consisting O, S, Se, and combinations thereof.

Abstract: A nonlinear crystal has increased spectral acceptance. The nonlinear crystal includes a plurality of domains. The domains are arranged serially across the nonlinear crystal. The domains have alternating polarity. The poling periods of the domains are varied across the nonlinear crystal so as to provide nonuniform chirping of phase matching of focused optical signals propagated through the nonlinear crystal.

Abstract: An acidic amorphous silica-alumina having large specific surface area and a large pore volume, a carrier complex and a hydrotreating catalyst containing said acidic amorphous silica-alumina, in particular a hydrocracking catalyst containing said acidic amorphous silica-alumina in combination with a modified zeolite-Y for treating petroleum hydrocarbon materials to produce middle distillates, and processes for the preparation thereof. Said amorphous silica-alumina has a SiO2 content of 10-50 wt %, a specific surface area of 300-600 m2/g, a pore volume of 0.8-1.5 ml/g and an IR acidity of 0.25-0.60 mmol/g. The catalyst according to the present invention shows a relatively high activity and mid-distillate selectivity and can be particularly used in hydrocracking process for producing mid-distillates in a higher yield.

Abstract: Mesoporous hexagonal, cubic or wormhole aluminosilicates derived from zeolite seeds using an ionic structure directing agent are described. The aluminum in the structures is stable so that the framework of the structures does not collapse when heated in the presence of water or water vapor (steam). The steam stable aluminosilicates can be used as acid catalysts for hydrocarbon conversions, including the fluidized bed catalytic cracking and the hydrocracking of petroleum oils, and other cracking of organic compounds.

Abstract: Semiconductor nanoparticles, having a poly(alkylene glycol) residue attached to the surface of semiconductor crystals, exhibit hydrophilicity, a non-specific adsorbing property to biosubstances, and absorption and luminescence characteristics controlled by aquantum effect of the semiconductor crystals.

Abstract: The present invention relates to single crystal silicon, ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect, is substantially free of oxidation induced stacking faults and is nitrogen doped to stabilize oxygen precipitation nuclei therein, and a process for the preparation thereof.

Abstract: This invention relates to a method for conditioning a waste constituted of an aqueous solution of sodium hydroxide NaOH of 3 to 10 M, possibly radioactive. The method is as follows: a) a metakaolin powder is added to the aqueous solution such that a suspension is obtained capable of solidifying and forming a crystalline phase of the zeolite A type; b) the suspension is introduced into a mould; c) the suspension is left to solidify in the mould in order to obtain a moulded solid product based on zeolite A; d) the moulded product is dried; and e) the zeolite A phase is converted into a nepheline type phase by heat treatment at a temperature of 1000° C. to 1500° C.

Abstract: The optical member of the present invention is an optical member comprising a fluoride crystal; and having an optical axis forming an angle of 10° to 36° with a <111> axis of the fluoride crystal, and a birefringence of 2.0 nm/cm or less in the optical axis direction. The optical member of the present invention can improve the yield and processing accuracy in the process of making the optical member, and can achieve sufficiently high optical characteristics.

Abstract: A method of growing a crystalline ingot having a <110> orientation, such as a dislocation-free (“DF”) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a <110> crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2.5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2.5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a <110> crystal direction and a diameter of at least about 200 mm.

Abstract: The present invention provides a silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method under such conditions that V-rich region should become dominant, wherein count number of particles having a size of 0.1 &mgr;m or more is 1 count/cm2 or less when particles are counted by using a particle counter and a method for producing a silicon single crystal. Thus, there is provided a production technique that can improve productivity and reduce cost for high quality silicon wafers of excellent device characteristics by further reducing density and size of defects such as COP.

Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.

Abstract: A process for the preparation of mesostructured molecular sieve silicas from inorganic silicon precursors and polyoxyethylene oxide based polymers is described. The silicas are stable upon calcination to 600° to 800° C. The silicas are useful in refining processes.

Abstract: Mesoporous hexagonal, cubic or wormhole aluminosilicates derived from zeolite seeds using an ionic structure directing agent are described. The aluminum in the structures is stable so that the framework of the structures does not collapse when heated in the presence of water or water vapor (steam) The steam stable aluminosilicates can be used as acid catalysts for hydrocarbon conversions, including the fluidized bed catalytic cracking and the hydrocracking of petroleum oils, and other cracking of organic compounds.

Abstract: A process is described for preparing a supported zeolite membrane constituted by a composite continuous zeolite/support layer of controlled thickness, wherein the zeolitic phase is principally localized in the pores of a porous support and optionally on the external surface thereof, the process comprising at least the formation of a precursor gel of the zeolite, bringing the gel into contact with the support and crystallizing the zeolite. The zeolite is crystallized by carrying out a thermal program comprising at least three steps in succession: a first constant temperature stage carried out at a temperature in the range 50° C. to 300° C., cooling to a temperature of strictly less than 50° C. followed by a second constant temperature stage carried out at a temperature range of 50° C. to 300° C. The prepared membrane is used in particular in processes for separating gas or separating liquids.

Abstract: The invention involves a process for production of macrostructures of a microporous material. The process is characterized by the fact that seeds formed in or introduced by ion exchange or adsorption to a porous organic ion exchanger with the desired size, shape and porosity are made to grow and form a continuous structure by further deposition of inorganic material from a synthesis solution under hydrothermal conditions. The organic ion exchanger can be eliminated by chemical destruction or dissolution and, in so doing, leaves behind an inorganic microporous structure with the size and shape of the employed organic ion exchanger.

Abstract: An epitaxial silicon wafer, which has no projections having a size of 100 nm or more and a height of 5 nm or more on an epitaxial layer, and a method for producing an epitaxial silicon wafer, wherein a single crystal ingot containing no I-region is grown when a silicon single crystal is grown by the CZ method, and an epitaxial layer is deposited on a silicon wafer sliced from the single crystal ingot and containing no I-region for the entire surface. An epitaxial wafer of high quality with no projection-like surface distortion observed as particles on an epi-layer surface is provided by forming a wafer having no I-region for the entire surface from a single crystal and depositing an epitaxial layer thereon, and a single crystal having no I-region for entire plane is produced with good yield and high productivity, thereby improving productivity of epi-wafers and realizing cost reduction.

Abstract: A silicon single crystal wafer for epitaxial growth grown by the CZ method, which is doped with nitrogen and has a V-rich region over its entire plane, or doped with nitrogen, has an OSF region in its plane, and shows an LEP density of 20/cm2 or less or an OSF density of 1×104/cm2 or less in the OSF region, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer. There are provided a substrate for an epitaxial wafer that suppresses crystal defects to be generated in an epitaxial layer when epitaxial growth is performed on a CZ silicon single crystal wafer doped with nitrogen and also has superior IG ability, epitaxial wafer utilizing the substrate, as well as methods for producing them and method for evaluating a substrate suitable for an epitaxial wafer.

Abstract: A silicon wafer obtained by slicing a silicon single crystal ingot grown by the Czochralski method with or without nitrogen doping, wherein the silicon wafer has an NV-region, an NV-region containing an OSF ring region or an OSF ring region for its entire plane and has an interstitial oxygen concentration of 14 ppma or less, and a method for producing it, as well as a method for evaluating defect regions of a silicon wafer. Thus, there are provided a silicon wafer that stably provides oxygen precipitation regardless of position in crystal or device production process, and a method for producing it. Further, defect regions of a silicon wafer of which pulling conditions are unknown and thus of which defect regions are also unknown can be evaluated.

Abstract: A substrate for fabricating semiconductor devices based on Group III semiconductors and the method for making the same. A substrate according to the present invention includes a base substrate, a first buffer layer, and a first single crystal layer. The first buffer layer includes a Group III material deposited on the base substrate at a temperature below that at which the Group III material crystallizes. The Group III material is crystallized by heating the buffer layer to a temperature above that at which the Group III material crystallizes to form a single crystal after the Group III material has been deposited. The first single crystal layer includes a Group III-V semiconducting material deposited on the first buffer layer at a temperature above that at which the Group III semiconducting material crystallizes. In one embodiment of the present invention, a second buffer layer and a second single crystal layer are deposited on the first single crystal layer.

Abstract: A method for changing the surface termination of a perovskite substrate surface, an example of which is the conversion of B-site terminations of a single-crystal STO substrate to A-site terminations. The method generally comprises the steps of etching the substrate surface by applying a reactive plasma thereto in the presence of fluorine or another halogen, and then annealing the substrate at a temperature sufficient to regenerate a long range order of the surface, i.e., the surface termination contributes to a better long range order in a film epitaxially grown on the surface. More particularly, the resulting substrate surfaces predominantly contains A-site surface terminations, i.e., SrO for STO (100) substrates. As a result, disadvantages associated with B-site terminated perovskite substrate surfaces are avoided. A suitable etching treatment is a low power oxygen ashing in the presence of low halogen levels.

Abstract: The invention is directed to a method for making a silicoaluminophosphate (SAPO) molecular sieve from a reaction mixture comprising components present in amounts sufficient to form the SAPO, the reaction mixture having a first pH. The method comprises the steps of: adding an acid to the reaction mixture after the reaction mixture undergoes a change in pH from the first pH; and crystallizing the SAPO from the reaction mixture. The present invention is also directed to a silicoaluminophosphate molecular sieve made by this process.

Abstract: The present invention provides methods for preparing hydrothermally stable MCM-41 mesoporous molecular sieves incorporating aluminum and other transition metals. The materials prepared by these methods possess a very high surface area and narrow uniform pore distribution in the mesopore region, and are highly thermally stable whereby the ions are not leached out after high temperature annealing.

Abstract: There is provided macrostructures of porous inorganic material which can have controlled size, shape, and/or porosity and a process for preparing the macrostructures. The macrostructures comprise a three-dimension network of particles of porous inorganic materials. The process for preparing the macrostructures involves forming an admixture containing a porous organic ion exchanger and a synthesis mixture capable of forming the porous inorganic material and then converting the synthesis mixture to the porous inorganic material. After formation of the composite material, the porous organic ion exchanger can be removed from the composite material to obtain the macrostructures.

Abstract: Mesoporous hexagonal, cubic or wormhole aluminosilicates derived from zeolite seeds using an ionic structure directing agent are described. The aluminum in the structures is stable so that the framework of the structures does not collapse when heated in the presence of water or water vapor (steam). The steam stable aluminosilicates can be used as acid catalysts for hydrocarbon conversions, including the fluidized bed catalytic cracking and the hydrocracking of petroleum oils, and other cracking of organic compounds.

Abstract: A ferroelectric single crystal having the composition of formula (I) has a high Piezoelectric constant together with good electromechanical and electrooptical properties and it can be prepared in a size of 5 cm in diameter or greater, useful for preparing various devices: x(A)y(B)z(C)-p(P)n(N); (I) wherein, (A) is Pb(Mg⅓ Nb⅔)O3 or Pb(Zn⅓Nb⅔)O3, (B) is PbTiO3, (C) is LiTaO3, (P) is a metal selected from the group consisting of Pt, Au, Ag, Pd and Rh, (N) is an oxide of a metal selected from the group consisting of Ni, Co, Fe, Sr, Sc, Ru, Cu and Cd, x is a number in the range of 0.65 to 0.98, y is a number in the range fo 0.01 to 0.34, z is a number in the range of 0.01 to 0.1, and p and n are each independently a number in the range of 0.01 to 5.

Abstract: Mesoporous hexagonal, cubic or wormhole aluminosilicates derived from zeolite seeds using an ionic structure directing agent are described. The aluminum in the structures is stable so that the framework of the structures does not collapse when heated in the presence of water or water vapor (steam). The steam stable aluminosilicates can be used as acid catalysts for hydrocarbon conversions, including the fluidized bed catalytic cracking and the hydrocracking of petroleum oils, and other cracking of organic compounds.

Abstract: There is disclosed a method for manufacturing a silicon carbide film in which a crystal orientation is continued on a single crystal substrate surface and silicon carbide is allowed to epitaxially grow, the method comprising the steps of: entirely or partially providing the substrate surface with a plurality of undulations extended parallel in one direction; and allowing silicon carbide to grow on the substrate surface.

Abstract: The invention concerns a microporous oxide material ITQ6, with a characteristic X-ray diffraction pattern, and surface areas for which microporous surface area may be of at least 20 m2/g the external surface area may be at least 350 m2/g and the total surface area may be at least 400 m2/g. It may be made via preparation of gel, its hydrothermal treatment, and the treatment of the resulting material with a swelling solution followed by at least partial delamination e.g., by mechanical agitation or ultrasonics. The final oxide material is calcined and, in its acid form or combined with metals, especially noble metals, is useful as catalyst for the isomerization of n-butene to isobutene, or in dewaxing and isodewaxing processes and as a catalytic cracking catalyst or as an additive in FCC catalysts.

Abstract: An aluminosilicate in an acicular form, a platy form, or a columnar form and having the composition represented by aM2O.bAl2O3.cSiO2.dRmAn.yH2O, wherein M is at least one of Na and K; R is one or more elements selected from the group consisting of Na, K, Ca and Mg; A is one or more members selected from the group consisting of CO3, SO4, NO3, OH and Cl; a is from 1 to 6; b is from 2 to 8; c is from 2 to 12; d is from 0 to 4; m is from 1 to 2; n is from 1 to 3; and y is from 0 to 32; a polishing agent including the aluminosilicate; and a detergent composition including the aluminosilicate.

Abstract: A single-crystal rod, obtained using CZ crucible pulling, has a crystal cone and a cylindrical single-crystal rod, and the crystal cone has an apex angle of 30° to 90°. There is also a process for producing dislocation-free single-crystal rods using CZ crucible pulling in which a seed crystal is immersed in a melt and is pulled out again, and a cone with an apex angle of from 30° to 90° is pulled.

Abstract: The present invention provides relates to silicon carbide single-crystals and in particular to silicon carbide single-crystals produced by supplying superfine silicon dioxide particles and superfine carbon particles to nucleating silicon carbide crystals and reducing the silicon dioxide by the carbon. The silicon carbide single-crystals according to the present invention comprise silicon carbide single-crystals grown on nucleating silicon carbide crystals, which are prepared by supplying and sticking superfine silicon dioxide particles and superfine carbon particles onto the surface of nucleating silicon carbide crystals kept in a heated state in an inert gas atmosphere and reducing the silicon dioxide by the carbon on the surface of the nucleating silicon carbide crystals thereby allowing silicon carbide single-crystals to grow on the nucleating silicon carbide crystals.

Abstract: A nucleant seed for epitaxial growth of single-crystal CaF2 includes SrF2. In some embodiments, YF3, LaF3, or rare-earth fluoride is substituted into the SrF2 structure.

Abstract: A charging material made from semiconductor material, is used for charging or recharging a melting crucible during the Czochralski crucible-pulling process. This charging material has a polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue, which rods are coupled by means of a tongue-and-groove connection. There is also a holding system for holding a polycrystalline silicon rod during the Czochralski crucible-pulling process or the float zone process, which has a tongue-and-groove connection between the polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue.

Abstract: In a method for producing a silicon single crystal by growing a single crystal ingot while a magnetic field perpendicular to a crystal growth axis is applied to a silicon melt contained in a quartz crucible during pulling of the single crystal from the melt contained in the quartz crucible, the crystal growth is performed so that one of a low temperature region and a high temperature region generated at a surface of the silicon melt contained in the crucible should always cover a solid-liquid interface of the crystal growth, or a ratio of vertical magnetic field component to horizontal magnetic field component for magnetic field strength at the crystal center of the surface of the silicon melt contained in the quartz crucible is controlled to be 0.3 or more and 0.5 or less.