Abstract: This invention relates to an anode for use in an X-ray tube and a method of manufacturing the anode, and to a stationary anode X-ray tube. An anode base formed of copper or the like includes a recess formed in an end surface thereof and having an upwardly diverging inner peripheral wall. An anode target material such as tungsten is directly deposited in the recess by chemical vapor deposition.

Abstract: A method of forming a via hole in a substrate includes forming an opening in a substrate thereby forming a slag and then heating the substrate to recombine the slag with the substrate.

Abstract: Chemical vapor deposition of titanium metal is accomplished by forming a liquid solution of titanium tetrabromide in bromine, vaporizing the solution and contacting the vapor mixture with a plasma in the vicinity of a substrate. These titanium films show good conformality, low electrical resistance and are suitable as contact and adhesion layers in semiconductor microelectronics. By mixing ammonia gas with the mixed vapors of titanium tetrabromide and bromine, films containing titanium nitride are deposited at about 400.degree. C. These titanium nitride films are suitable as diffusion barriers and adhesion layers in semiconductor devices.

Abstract: A cold surface is obtained by coating a mat of ceramic particles that are bound together with a sol-gel binder and cooling the surface with a cryogen that wicks to the surface through pores in the mat.

Abstract: A ferroelectric memory device having a perovskite thin film of a rare earth manganate and processes for manufacturing the same. The perovskite thin film layer has properties consistent with high quality nonvolatile memory devices. The perovskite thin film layer can be applied by a MOCVD process, by a MOD process, or a liquid source delivery process, all of which are described.

Abstract: A method for minimizing reaction between metal conductors and other metals to minimize change in sheet resistance of the conductors upon heat treatment which includes providing a substrate. The substrate is preferably one of a dielectric, a metal or a semiconductor. A metallic diffusion barrier layer, preferably one of TiN, TiW or TiWN and preferably having a thickness of from about 10 nanometers to about 100 nanometers, is deposited on the substrate, preferably by one of sputtering, electron beam evaporation or chemical vapor deposition. The exposed surface of the metallic diffusion barrier layer is treated with a plasma, preferably an oxygen plasma, a nitrous oxide plasma or a plasma of an oxygen-containing species. An electrical conductor, preferably one of aluminum, aluminum-metal alloys, copper or copper-metal alloys and preferably having a thickness of from about 100 nanometers to about 1200 nanometers, is then deposited on the plasma-treated surface of the metallic diffusion barrier layer.

Abstract: A method for forming contacts of a semiconductor device, capable of simultaneously forming metal plugs having a uniform thickness in contact holes respectively formed at P.sup.+ and N.sup.+ impurity-diffused regions of a semiconductor substrate, thereby minimizing the formation of poor contacts and simplifying the formation of contacts. The method includes the steps of forming a metal pad having a small thickness only at the N.sup.+ impurity-diffused region, where a severe eroding reaction occurs, compared to the P.sup.+ impurity-diffused region, by use of a reacting gas at a low temperature, and then depositing tungsten on all contact regions by use of reacting gases at a high temperature.

Abstract: One method for fabricating solderable pads (406) onto a substrate (220) for direct chip attachment uses a multilayer metallization coating (500). The coating has a bottom layer (202) of indium-tin oxide, with an intermediate layer (204) of copper and a top layer (206) of indium-tin oxide. A masking layer (208) is deposited on the active display area (402) of the substrate, leaving the bonding pads uncovered. The revealed bonding pads are then plasma etched, using the polyimide as an etch resist, and the top layer of ITO is selectively removed to reveal the underlying copper layer. The exposed copper layer (204) is then plated with a solderable metal to the desired thickness to form bonding pads that may be used with direct chip attachment schemes.

Abstract: A process of growing a film of a metal on a substrate in a selective area thereof by chemical vapor deposition, the process comprising the steps of: preparing a source having a molecule comprising a metal and a radical; providing a substrate having a selective area made of a first substance which is unreactive with the radical and the other area made of copper which is reactive with the radical; and supplying the source onto the substrate held at a film growing temperature to induce a reaction on the substrate, such that, in the selective area, the molecule of the source is bonded to the first substance and decomposed to precipitate the metal on the first substance while, in the other area, the radical of the molecule is combined with the copper to cover the other area of the substrate with a coating which is unreactive with the molecule of the source.

Abstract: A method for producing feedthroughs in a substrate having a front and back surface, wherein the substrate either has a hole or absorbs radiation at a given wavelength. The method includes selecting and intimately bonding a sheet to the back surface of the substrate with an adhesive which is absorptive at the given wavelength. If the substrate has a hole, an exposed area of the sheet is illuminated with laser radiation at the given wavelength and at a power level sufficient to ablate a portion of the sheet behind the exposed area, thereby creating the feedthrough in the substrate. If the substrate has no hole, an area on the front surface of the substrate is illuminated with laser radiation at the given wavelength and at a power level sufficient to ablate a portion of the substrate and a portion of the sheet behind the area, thereby creating the feedthrough in the substrate. The sheet can then be removed from the substrate.

Abstract: A single chamber of a vapor deposition system is used to deposit both Ti and TiN, subsequent to deposition of Al or Al alloy. Because such layers are deposited in the same chamber, the process requires fewer handling steps than the conventional process, thereby increasing throughput. Still further, only three physical vapor deposition chambers of the four of the apparatus are used, thereby allowing the fourth chamber to be used for other deposition.

Abstract: A metalorganic chemical vapor deposition (MOCVD) method for depositing an F-series metal onto a semiconductor or other substrate or for incorporating nitrogen as a p-type dopant in Group II-VI semiconductor materials. The MOCVD method utilizes an F-series metal amide or zinc amide composition as the source compound for the F-series metal or nitrogen, respectively. Novel erbium amide and zinc amide compositions are disclosed along with methods for preparing the metal amide compositions.

Abstract: A method of forming a conductive film on an insulating region of a substrate wherein a surface of the insulating region formed on the substrate is activated by irradiating the surface with electrons, ions or light. Next, a metal film pattern constituting, for example, an electrical interconnection, is deposited on the surface by applying a selective chemical vapor deposition process using a metal halide gas.

Abstract: A method of manufacturing high aspect ratio plated through holes in a circuit carrying substrate. High aspect ratio apertures or holes (16) are formed in a substrate (10). A thin film of copper (20) is sputtered onto the substrate and in the apertures that a macroscopically discontinuous copper film (26) is formed on part of the aperture walls. The macroscopically discontinuous copper film is substantially thinner than the copper film that is deposited on the surface. A catalytic copper coating (30) is plated directly on the vacuum deposited thin film of copper by electroless copper plating in a manner sufficient to form a macroscopically continuous copper layer on the aperture walls.

Abstract: An anisotropic nanophase composite material and a method of producing same. The composite material comprises a nanophase composite structure containing a multiplicity of particulates of at least one material. The particulates of one material are spaced from each other three-dimensionally and anisotropically oriented in a given direction. The particulates have an average thickness of 1 to 10 nanometers and an average length of not less than 10 nanometers, the length being larger than the thickness. Since the particulates of dimensions on the order of nanometers are oriented only in a given direction, the composite material produces an intensified nonlinear optical effect and is excellent in polarizing characteristics, birefringent characteristics, or photovoltaic characteristics.

Abstract: A process for producing a catalytically active gas diffusion electrode, in which process a gas-permeable membrane is first covered by a structuring mask which has recesses in accordance with the planned electrode surfaces. Next, through vapor deposition or cathodic sputtering of a conductive substance in a vacuum, a conductive electrode pattern structured in accordance with the recesses is produced on the membrane. After this, the conductive electrode pattern located on the membrane is galvanically coated with the catalyst by electrolytic deposition and then made hydrophobic.

Abstract: A conductive polymer comprises a silicon-containing polymer having, in the main chain thereof, Si--Si bonds or both Si--Si bonds and C--C multiple bonds, and ferric chloride doped in said polymer through vapor phase doping. A method for preparing such a conductive polymer is also described.

Abstract: To fill a hole or trench structure in an article, such as a semiconductor wafer, a layer is formed on the article. The layer extends over the structure so as to seal the mouth thereof. Then, the wafer and layer are subject to elevated pressure and elevated temperature such as to cause material of the layer to flow into the structure.

Abstract: An oxygen sensor has alumina porous layer on a surface of a solid electrolyte to cover electrodes and the alumina porous layer is simultaneously baked with the solid electrolyte. The alumina porous layer has baking contraction percentage which is the same range of the solid electrolyte. Alumina powder which is a starting material of the alumina porous layer includes 0.3 to 0.5 .mu.m of a 50% grain size, 0.4 to 1.1 .mu.m of a 70% grain size, and 0.8 to 4.0 .mu.m of a 90% grain size in a grain size distribution of weight integration frequency and further a specific surface area according to a BET method is approximately 8.5 to 11.0 m.sup.2 /g. It is preferable that the baking contraction percentages of the solid electrolyte and alumina porous layer are approximately 16 to 22%.

Abstract: Electrical resistors and resistor networks are provided on an insulative substrate with designated conductive terminations by direct and continuous writing of resistive lines in fine-line patterns between and over each two of neighboring terminations from heterogeneous resistive thick film compositions. The resistive lines of line width w and total length l between conductive terminations can be directly written by suitable writing apparatus to have a high aspect ratio n=l/w, thereby providing resistors and resistor networks of high resistance values on an overall substrate area significantly smaller than required for conventional thick film resistors of comparable resistance value and comparable operational characteristics.

Abstract: A thin metal layer is applied in a thickness of less than 1,000 nm to a polymeric, web-like substrate which is moved along a cylindrical support in a vacuum chamber containing an evaporator crucible releasing the metal vapor toward the support and two coating screens arranged between the evaporator crucible and the support and defining the limiting angles of incidence of the vapor jet striking the substrate, by a process in which, in the case of predetermined limiting angles of incidence, the amount of metal vapor applied to the substrate can be optimized by means of the arrangement of the coating screens and the position of the evaporator crucible.

Abstract: A method is disclosed to deposit aluminum and a metal oxide on substrates for improved corrosion, oxidation, and erosion protection. Low temperature chemical vapor deposition is used. A homogeneous biphase coating may be deposited, as well as layers of aluminum and metal oxides.

Abstract: A method is disclosed to deposit aluminum and platinum on substrates for improved corrosion, oxidation, and erosion protection. Low temperature chemical vapor deposition is used. A homogeneous biphase coating of aluminum and platinum may be deposited, as well as sequential layers of aluminum and platinum.

Abstract: A polymer matrix composite structure for electrical purposes is produced by taking a fibre reinforcement substrate (1) to produce a pre-form (4) of a desired shape and configuration, metallising the pre-form to provide an electrically conductive coating for EMC capability, and impregnating the metallised pre-form with resin.

Abstract: Chemical vapor deposition (CVD) is accomplished by the reaction of vapors of certain novel compounds containing ligands derived from partially hydrogenated aromatic nitrogen-containing heterocyclic compounds. For example, tetrakis(1,4-dihydropyridinato)titanium reacts at 400.degree. C. to deposit films containing titanium metal. These films show good conformality, electrical conductivity and are suitable as a contact and adhesion layers in semiconductor microelectronics. Similar compounds containing 1,4-dihydropyridinato ligands can be used as CVD sources for a wide variety of elements, including metals, semiconductors and non-metals.

Abstract: A method of growing, in a vapor phase, a gold film having high electro-migration resistance and a flat surface, and capable of being buried in contact holes disposed in an insulating film of an integrated circuit device, for example, at a practical growing rate. Dimethylgold hexafluoroacetylacetonato (DMAu(hfac)), for example, is used as a starting gas, and vapor growth is carried out under specific conditions by utilizing thermal CVD. Adhesion of the gold film can be improved by converting it to a two-layered film by the combination of plasma enhanced CVD with thermal CVD.

Abstract: A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system.

Abstract: Three-dimensional RF coils suitable for use in NMR spectroscopy or imaging are described, as well as methods for making such coils. The coil is made from a thin-walled, non-magnetic, electrically insulating tube. The tube is then masked and a first conducting layer is applied, e.g., by evaporation. An additional insulating layer is provided on top of the first conducting layer, and then a second conducting layer is applied. An optional additional insulating layer may then be applied over the second conducting layer. The first and second conducting layer, in combination, are electrically connected to form a self-resonant structure at the selected frequency of the NMR apparatus. The coil may be fine-tuned conventionally by means of a series or parallel capacitor, or by changing the position of a conductive ring around the outside of the coil. Alternately, two tubes may be used, with only one conducting layer deposited on each.

Abstract: A maskless process for forming a protected metal feature in a planar insulating layer of a substrate is disclosed. A first barrier material is disposed in a recess in an insulating layer, a conductive metal is disposed on the first barrier material such that the entire metal feature is positioned within the recess below the top of the recess, a second barrier material is disposed on the metal feature such that the second barrier material occupies the entire portion of the recess above the-metal feature and extends above the top surface of the insulating layer, and the second barrier material is then polished until the top of the second barrier material is in and aligned with the top of the insulating layer. As a result, the metal feature is surrounded and protected by the first and second barrier materials, and the substrate is planarized.

Abstract: The present invention relates to a method for the production of highly pure copper thin films free from carbonaceous impurities, which comprises depositing a thin copper film using an organic copper compound precursor containing ketoesters alone or in combination with a Lewis base as ligands, by which the ligands are not thermally decomposed during the vapor deposition.

Abstract: A blanket tungsten deposition apparatus comprises a reactor the inside of which is evacuatable, a gas inlet means for introducing a reaction gas into the reactor, mount means for mounting an object substrate to be treated, penetration-preventing means for preventing penetration of gas, disposed to cover a peripheral portion of a surface of the object substrate to be treated and having an inner diameter smaller than a diameter of the object substrate and an outer perimeter larger than that of the object substrate, and another gas inlet means for introducing a gas to a space on the periphery of the object substrate covered by the penetration-preventing means. Growth of W film on a peripheral SiO.sub.2 portion of substrate is prevented and hence production of particles caused by peeling-off of W film is prevented.

Abstract: Metallization by deposit under vacuum of metal on a face of a support film of synthetic resin at a thickness of 0.005 to 0.1 micron, followed by the electrochemical deposit of an additional metallic layer, whose thickness is between 0.1 and 4 microns. A coating of an electrode of a generator is then applied on the surface of the collector thus prepared. The assembly is characterized by the adhesion of its components and its facility of mechanized handling during the steps of assembling the complete generator.

Abstract: The present invention relates to a method for the interconnection/repair of circuits on a transparent substrate at ambient temperature using laser induced chemical vapor deposition.

Abstract: Nonlinear optical composites with large third-order optical response compd of metal clusters uniformly dispersed in polymers are prepared by vapor deposition of a metal onto a cold support while simultaneously cocondensing a vapor of an organic material. Where the organic material is a monomer, it polymerizes either when it comes in contact of the metal and/or when the cold surface is warmed. The unpolymerized monomer is removed to yield a processable composite. When the organic material is a diluent, it deposits as a solid on the cold surface forming a dispersion of the solid metal clusters in the liquid diluent. A polymer solution is then mixed with the dispersion and the composite is formed after removal of the diluent and the solvent for the polymer.

Abstract: A process for CVD including plasma enhanced and laser induced CVD using one or more precursor film forming metal compounds as the major film forming metal precursor, for example organotungsten, which is admixed with minor amounts of a precursor catalytic metal compound, for example, an organoplatinum compound, as a precursor to a catalytic metal in the presence of hydrogen gas to provide improved purity of deposited metal films having residual amounts of the catalytic metal incorporated therein.

Abstract: A surface acoustic wave device which can operate at a higher frequency range is produced by irradiation with a focused ion beam to produce a narrower electrode width and narrower spacing width between neighboring electrodes in contact with a piezoelectric body, without degrading the reliability of the device. The surface acoustic wave device includes a piezoelectric body 3 and interdigital electrodes 2a and 2b in close contact with the piezoelectric body 3 and formed by using the focused ion beam. In order to increase the frequency of the device, the piezoelectric body 3 may be formed on a substrate 1, for example of diamond.

Abstract: An anisotropic nanophase composite material and a method of producing same. The composite material comprises a nanophase composite structure containing a multiplicity of particulates of at least one material. The particulates of one material are spaced from each other three-dimensionally and anisotropically oriented in a given direction. The particulates have an average thickness of 1 to 10 nanometers and an average length of not less than 10 nanometers, the length being larger than the thickness. Since the particulates of dimensions on the order of nanometers are oriented only in a given direction, the composite material produces an intensified nonlinear optical effect and is excellent in polarizing characteristics, birefringent characteristics, or photovoltaic characteristics.

Abstract: The present invention is the formation of solid polymer layers under vacuum. More specifically, the present invention is the use of "standard" polymer layer-making equipment that is generally used in an atmospheric environment in a vacuum, and degassing the monomer material prior to injection into the vacuum. Additional layers of polymer or metal or oxide may be vacuum deposited onto solid polymer layers.Formation of polymer layers under a vacuum improves material and surface characteristics, and subsequent quality of bonding to additional layers. Further advantages include use of less to no photoinitiator for curing, faster curing, fewer impurities in the polymer electrolyte, as well as improvement in material properties including no trapped gas resulting in greater density, and reduced monomer wetting angle that facilitates spreading of the monomer and provides a smoother finished surface.

Abstract: By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

Abstract: In one embodiment, a method of forming a barrier layer for contacting a metal interconnect layer to one or more exposed N and P type silicon regions on a wafer. The wafer is heated with a direct radiation source, such as a lamp. To equalize the differing emissivities of the N type and P type silicon regions, an opaque layer of refractory metal is first formed on the regions at a temperature below approximately 100.degree. C. A refractory metal deposition process is then conducted at temperatures between 230.degree. C.-425.degree. C. During this higher temperature deposition process, the reducing gas is ramped up with time to increase the deposition rate of the refractory metal as the exothermic reducing reactions increasingly heat the contact areas.

Abstract: Diode lasers of the formula GaInP/InGaAsP on GaAs substrates which operate at powers up to 5.3 W with emitting apertures of 100 microns are disclosed. By varying compositions of the active layer and by employing strained layer quantum wells, InGaAsP diode lasers are fabricated over the wavelength range of 700 to 1100 nm.

Abstract: High power diode lasers of the formula GaInP/InGaAsP on GaAs substrates which operate at powers up to 5.3W with increased power levels and efficiencies are disclosed. By increasing the thickness of the optical cavity of the heterostructure and by doping to a level of 10.sup.20 atoms/cm.sup.3 the cap layer surface with a p-type dopant such as diethyl zinc, increased power at an increased efficiency level is observed.

Abstract: A monolithic circuit, such as a piezoelectric device, semiconductor, or the like, may be fabricated by forming an operational metallization layer (12) on a substrate (10). A subsequent layer (40), such as a sealing ring pattern (42) may then be applied using a thin film deposition technique. A thin film material is applied through a mask assembly (28). The mask assembly (28) includes a mask material (30) that has been applied to a screen (24) and patterned as desired. The mask material (30) extends beyond the screen (24) so that only the mask material contacts the substrate (10) during thin film deposition. Preferably, the screen (24) is woven from individual wires (26) having circular cross-sectional shapes. The subsequent layer (40) is applied both through perforations (18) in the screen (24) and under the screen's wires (26).

Abstract: The invention provides an apparatus and methods of using the apparatus to transfer conductive patterns onto substrates under conditions of heat and pressure. The apparatus comprises a master mold with a printing surface on which is produced a permanent mirror image of the conductive pattern to be created. This pattern is then coated with a loosely adherent film of conductive metal, such as copper, which is transferred onto a substrate to be printed.

Abstract: Stable nuclei of a conductive material are formed on a substrate in a first PVD process either by the adsorption of a nucleus forming gas onto the substrane surface and the subsequent deposition of the conductive material, or by the deposition of the conductive material at a partial pressure of a nucleus forming gas of less than 10.sup.-8 Torr, and afterward, a thin and continuous film of the conductive material is formed in a second PVD process. The substrate temperature is controlled so as not to exceed room temperature in the first PVD process, and so as to substantially exceed room temperature in a second PVD process. A thin and continuous film of a conductive material is also obtained by interrupting the deposition of the conductive material on a substrate provided with via-holes of small size by a PVD process, annealing the deposit, and then re-depositing the conductive material to obtain a continuous film.

Abstract: A heat transfer insulated part including a heat transfer substrate formed of a sintered metal of Cu-W or Cu-Mo, an insulating ceramic layer for electrically insulating the heat transfer substrate, formed of ceramic such as Al.sub.2 O.sub.3, SiO.sub.2 and Si.sub.3 N.sub.4, and a barrier layer provided between the heat transfer substrate and an insulating ceramic layer composed of at least either one of metal layers of W and Mo. Furthermore, preferably, an intermediate layer composed of titanium carbide and/or titanium nitride and so forth for enhancing the adhesive property between the insulating ceramic layer and the barrier layer is provided.

Abstract: A method of manufacturing a flexible amorphous silicon solar cell includes the steps of: a) coating a PI varnish on a glass substrate; b) imidizing the PI varnish film; c) vacuum-depositing a metal film on the PI film; d) vacuum-depositing an amorphous silicon film on the metal film; e) vacuum-depositing a transparent conducting film on the amorphous silicon film; and f) separating the PI film from the glass substrate. The method also provides for preparing the PI varnish by the steps of: 1) preparing a mixed solution of 60-100% by weight aprotic solvent, and 0-40% by weight aromatic solvent; 2) adding into the mixed solution in a mole ratio of 1:9 two aromatic diamines; and 3) further adding in the mixed solution in a mole ratio of 1:5 two aromatic dianhydrides.

Abstract: A method for applying a metal film barrier layer between a substrate and a superconductor coating or over a superconductivity coating using chemical vapor deposition in which low vapor pressure reactants are used, is disclosed, which comprises the steps of providing a substrate and a quantity of metal-bearing reagent and one or more reagents, placing the substrate within the furnace, introducing the metal-bearing reagent by a powder feeder means and then the reagents at different times into and reacting them in the furnace, resulting in the deposition first of a coating of metal onto the substrate and then of a coating consisting essentially of the superconducting reactant components onto the metal film; said reagents generally chosen to yield the group of oxide superconductors.

Abstract: A gas discharge tube using a tunnel effect type electron emitting device as a cathode is provided. The electron emitting device comprises a conductive metal base and a dielectric film formed preferably of a material containing MgO as a main component on the metal base. The dielectric film faces an anode and is exposed to a gas in the tube. In the cathode of this structure, discharge is effected at a relatively low DC voltage.

Abstract: Chemical Vapor Deposition of copper films is enhanced by simultaneously introducing in the reactor vapor of an organometalic copper precursor and .?.copper complex.!. vapor of a volatile ligand or the hydrate of the ligand.