Silver, Gold, Platinum, Or Palladium Patents (Class 427/125)
  • Patent number: 5262205
    Abstract: A method of producing an ion sensitive working electrode for a heavy metal ion sensor, the ion sensitive working electrode including a mixture of Ag.sub.2 S and MeS in which Me represents a heavy metal to be determined in a solution to be measured, the method including applying a conductive layer onto a substrate using at least one thick-film technique selected from the group consisting essentially of screen printing and film casting; applying a layer comprised of a plurality of juxtaposed sections on top of the conductive layer, each section of the plurality of juxtaposed sections being comprised of a mixture of Ag.sub.
    Type: Grant
    Filed: May 20, 1992
    Date of Patent: November 16, 1993
    Assignee: Battelle-Institut e.V.
    Inventors: Volker Leonhard, Hartmut Erdmann, Wing F. Chu
  • Patent number: 5256443
    Abstract: A thin film made of a sol solution of noble metal alcoxides is formed on a substrate and then dried and baked in a reductive or oxidative atmosphere to produce a thin film of metals or metal oxides. The solution of noble metal alcoxides may contain merely a single component or a plurality of components. In addition, a solution of metal alcoxides with noble metal alcoxides as main components or additives may be used in place of the solution of noble metal alcoxides. The thin film of metals or metal oxides can be formed in a single layer or a plurality of layers on a substrate to improve, for example, the response of a sensor.
    Type: Grant
    Filed: May 15, 1992
    Date of Patent: October 26, 1993
    Assignee: Horiba, Ltd.
    Inventor: Katsuhiko Tomita
  • Patent number: 5246576
    Abstract: The electrode of the present invention has metallic surface within a laser produced opening where the metallic surface extends into an electronic metallic conductive pathway and the pathway is covered for electric insulation by an encapsulant layer. The encapsulant layer around the metallic surface has the opening to allow the exposure of the metallic surface from the encapsulant layer. The metallic pathway and encapsulant are resident on a substrate, and are produced from layered circuitry. The electrochemical cell has the aforementioned electrode juxtaposed to another electrode. This electrode is part of the patterned metallic layer that is produced by layered circuitry. The electrode extends into an electronic metallic conductive pathway that is spaced apart and electronically insulated from the other pathway. The insulation can be supplied by a covering of encapsulant material that covers the pathway except does not cover the second electrode.
    Type: Grant
    Filed: December 10, 1990
    Date of Patent: September 21, 1993
    Assignee: PPG Industries, Inc.
    Inventors: Matthew J. Leader, Jeffery A. Graves
  • Patent number: 5244538
    Abstract: A method of patterning metal on a substrate without photolithography. The steps include providing a dielectric substrate, forming a metal mask in a predetermined pattern on the substrate without using a mask by direct-write deposition using a particle beam such as a liquid metal cluster force to form the mask, dry etching the substrate to form a plurality of channels therein, depositing a conductive metal into the channels, and removing the mask. The top of the substrate can then be planarized by polishing, or alternatively the dielectric between the metal lines can be etched. The invention is well suited for fabricating copper/polyimide substrates.
    Type: Grant
    Filed: July 26, 1991
    Date of Patent: September 14, 1993
    Assignee: Microelectronics and Computer Technology Corporation
    Inventor: Nalin Kumar
  • Patent number: 5240905
    Abstract: A metal electrode formed on an oxide superconductor for electric connection to the oxide superconductor, includes a first layer of Ag in direct contact with the oxide superconductor, and a second layer formed on the first layer. The second layer is formed of noble metal excluding Ag. The metal electrode can be formed by forming a first layer of Ag to cover a whole surface of the oxide superconductor layer, and forming a second layer of noble metal excluding Ag, to cover a whole surface of the first layer, thereby to form a double metal layer, and patterning the double metal layer so as to form a metal electrode composed of the double metal layer.
    Type: Grant
    Filed: January 28, 1992
    Date of Patent: August 31, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Saburo Tanaka, Hideo Itozaki, Shuji Yazu
  • Patent number: 5232747
    Abstract: An improved method for making aluminum connections to platinum electrodes is described. The method utilizes an oxide layer to isolate the aluminum from the platinum. The oxide layer is created by ashing the surface of the platinum using an Oxygen plasma.
    Type: Grant
    Filed: July 27, 1992
    Date of Patent: August 3, 1993
    Assignee: Radiant Technologies
    Inventor: Joseph T. Evans, Jr.
  • Patent number: 5232576
    Abstract: There are described an anode, a process for producing the same, an apparatus for electrolytic chromium plating, and a method for electrolytic chromium plating, using such anode, wherein the anode comprises an electrically conductive substrate comprising a valve metal or an alloy thereof, a first intermediate layer formed on the sustrate and comprising an oxide of tin, a second intermediate layer formed on the first intermediate layer and comprising either (1) platinum metal and an oxide of tin, or (2) platinum metal, an oxide of tin, and iridium oxide, and a surface layer formed on the second intermediate layer and comprising either (1) platinum metal and an oxide of tin, or (2) platinum metal, an oxide of tin, and iridium oxide, the composition of said surface layer being different form that of said second intermediate layer.
    Type: Grant
    Filed: September 4, 1991
    Date of Patent: August 3, 1993
    Assignee: Permelec Electrode Ltd.
    Inventors: Yukiei Matsumoto, Masao Sekimoto
  • Patent number: 5215866
    Abstract: A thin film printed circuit inductive element exhibiting low Q wherein a conductive spiral is deposited on an insulating substrate and resistive links are connected between adjacent turns of the spiral. Inherent resonance is thereby damped out.
    Type: Grant
    Filed: May 14, 1990
    Date of Patent: June 1, 1993
    Assignee: Avantek, Inc.
    Inventor: Marshall Maple
  • Patent number: 5202153
    Abstract: A method for making a thick film/solder joint comprising the sequential steps of:(1) applying a layer of first thick film conductor paste to an electrically non-conductive substrate in a pattern which has preselected solder pad areas and firing the layer;(2) applying over the first thick film layer only within the solder pad area a layer of a second thick film conductor paste having a low frit content and firing the layer; and(3) forming the solder joint by applying to the fired second thick film layer a layer of soft solder.
    Type: Grant
    Filed: August 23, 1991
    Date of Patent: April 13, 1993
    Assignee: E. I. Du Pont de Nemours and Company
    Inventor: Vincent P. Siuta
  • Patent number: 5202154
    Abstract: The invention relates to a method of producing a gas sensor element having a porous film formed by a thick-film technique on a ceramic substrate surface so as to cover selected portions of electrode films precedingly formed on the substrate surface. The electrode material is a noble metal such as platinum. Both the electrode films and the gas sensitive porous thick-film are formed by known methods. To improve the contact between the gas sensitive porous thick-film and the electrode films both mechanically and electrically and stabilize the internal resistance of the sensor element by depositing a noble metal such as platinum at the interface between the porous thick-film and each electrode film, the porous thick-film is impregnated with a solution of a noble metal compound such as chloroplatinic acid and thereafter maintained in a reducing gas atmosphere having a controlled humidity in the range from 5 to 90% (relative humidity) at a temperature in the range from 10.degree. C. to 135.degree. C.
    Type: Grant
    Filed: August 13, 1990
    Date of Patent: April 13, 1993
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Toshitaka Matsuura, Keizo Furusaki, Mineji Nasu, Akio Takami
  • Patent number: 5198262
    Abstract: Disclosed herein is a method of producing a mirror for electromagnetic radiations of short wavelengths, the method including forming a film on a substrate having a surface roughness smaller than 5 .ANG. by bombardment with a metal, which is at least partly in the form of cluster ions, in a vacuum chamber under the conditions that the accelerating voltage applied to the accelerating electrode is of 3-7 kV, the temperature of the substrate is kept at 0.degree.-60.degree. C., the pressure in the vacuum chamber is kept below 1.times.10.sup.-7 Torr, and the film is formed at a rate of 0.5-5 .ANG./s until it becomes 50-1000 .ANG. thick. A mirror form in accordance with this method has a high reflectivity which has never been achieved by conventional methods.
    Type: Grant
    Filed: March 14, 1991
    Date of Patent: March 30, 1993
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Isao Yamada, Yoichi Hashimoto
  • Patent number: 5197170
    Abstract: A process of forming an LC composite part. The process includes the steps of: forming a substrate having a capacitor section by laminating ceramic sheets having a plurality of capacitor electrodes formed thereon such that the ceramic sheets and electrode layers alternate, sintering the substrate, forming a plurality of coil sections on the sintered substrate, cutting the substrate into composite parts, and electrically connecting the capacitor electrode layers with the coil section.
    Type: Grant
    Filed: November 15, 1990
    Date of Patent: March 30, 1993
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Atsuo Senda, Osamu Kano, Yasuo Fujiki
  • Patent number: 5194295
    Abstract: Nickel or cobalt diffusion is suppressed in ceramic articles having a nickel or cobalt underlayer followed by a gold overlayer, by heat-treating the article in a reducing atmosphere at a temperature of at least about 650.degree. C. and subsequently depositing a final gold layer. By suppressing the diffusion of nickel or cobalt, the adhesion of hermetic lids attached thereto by soldering is improved.
    Type: Grant
    Filed: February 19, 1992
    Date of Patent: March 16, 1993
    Assignee: General Electric Company
    Inventor: Charles D. Iacovangelo
  • Patent number: 5190486
    Abstract: An electrically conductive pin and a method of selectively plating an electrically conductive pin. The pin provides gold plated contact regions on two end portions and a center portion plated with another conductive material, which may be tin lead. The method includes selectively masking desired gold plated contact regions with a plating resist material and then plating the center portion with the other conductive material. The plating resist material is preferably an insulator deposited by electrophoresis. The plating resist material is removed, after plating the center portion with the other conductive material, to expose the gold plated contact regions.
    Type: Grant
    Filed: July 23, 1991
    Date of Patent: March 2, 1993
    Assignee: Northern Telecom Limited
    Inventor: Peter Tsuk
  • Patent number: 5190601
    Abstract: Disclosed herein is a method of making a surface structure on a ceramic substrate capable of suppressing diffusion of Ni to an Au plating layer and of reducing the necessary thickness of the Au plating layer. A metallized layer (12), Ni layer (13) and Au layer (14) are formed in this order on a surface of a ceramic substrate (11). The substrate (11) is heated in a non-oxidizing atmosphere to cause an alloying reaction between the Ni layer (13) and the Au layer (14). Thereafter, an Au plating layer (16) is formed on the NiAu alloy layer (15). Since Ni in the NiAu alloy layer is not easily released, diffusion of Ni into the Au plating layer can be suppressed sufficiently. Therefore, the Au plating layer can be small in thickness, generally less than 1 micron.
    Type: Grant
    Filed: December 13, 1991
    Date of Patent: March 2, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akira Yamakawa, Akira Sasame
  • Patent number: 5178909
    Abstract: Silver-coated copper-based powders are prepared by the steps of dispersing copper powders in a chelating agent solution, adding a silver ion solution to the resulting dispersion to effect a substitution type of deposition reaction and, then, adding a reducing agent to the resulting solution to effect a reduction type of deposition reaction, thereby forming silver coats on the surfaces of the copper powders, wherein the chelating agent solution is prepared in two portions, a first portion thereof being prepared before the addition of the silver ion solution and a second portion thereof being added during the addition of the reducing agent, or in three portions, a first portion thereof being prepared before the addition of the silver ion solution, a second portion thereof being added during the addition of the reducing agent and a third portion thereof being added at the time of the completion of the reaction.
    Type: Grant
    Filed: July 17, 1991
    Date of Patent: January 12, 1993
    Assignee: Mitsui Kinzoku Kogyo Kabushiki Kaisha
    Inventor: Takao Hayashi
  • Patent number: 5179071
    Abstract: A high-T.sub.c superconductor contact unit having low interface resistivity is disclosed, as is a method for making the unit. An inert metal is deposited on the surface of the superconductor, which surface is preferably non-degraded, to form a unit with the surface of the superconductor, and where temperatures as high as 500.degree. C. to 700.degree. C. can be tolerated, the unit is oxygen annealed to establish a still lower surface resistivity between the surface of the high-T.sub.c superconductor and the inert metal, including a low surface resistivity of about 10.sup.-10 .OMEGA.-cm.sup.2 at high-T.sub.c superconductor operating temperatures. The superconductor is a metal-oxide superconductor, and may be rare earth, thallium, or bismuth based.
    Type: Grant
    Filed: January 15, 1991
    Date of Patent: January 12, 1993
    Assignees: The United States of America as represented by the Secretary of Commerce, Westinghouse Electric Corp.
    Inventors: John W. Ekin, Armand J. Panson, Betty A. Blankenship
  • Patent number: 5171608
    Abstract: Method for improved photolithography using a laser induced metallization cess to produce a metal mask wherein a work piece surface is treated to have a predetermined pattern of at least two materials each having different electron band gaps, the treated work piece is positioned in a metallizing solution, and the workpiece is exposed to a laser beam having a wavelength corresponding to the electron gap of a selected one of the materials. The method can advantageously be used to produce ohmic contacts for microcircuit devices.
    Type: Grant
    Filed: September 28, 1990
    Date of Patent: December 15, 1992
    Assignee: The Unites States of America as represented by the Secretary of the Navy
    Inventors: Richard F. Greene, Joseph Zahavi, Pehr E. Pehrsson, Christie R. Marrian
  • Patent number: 5167983
    Abstract: A technique for fabricating a patterned conductor on the inner surface of a transparent tube comprises providing a source of conductive material inside a hollow tube and directing actinic radiation onto the tube wall where the deposition of a conductive pattern is desired to deposit conductive material thereon. That conductive deposit may be thickened by subsequent electroless or electroplating. The result is an improved magnetic resonance sensor comprising a hollow tube having "flat" conductor coils disposed on its interior surface.
    Type: Grant
    Filed: August 12, 1991
    Date of Patent: December 1, 1992
    Assignee: General Electric Company
    Inventors: Yung S. Liu, Renato Guida
  • Patent number: 5164225
    Abstract: A method of fabricating a thin-film EL device comprising the steps of sequentially forming and stacking a first electrically conductive layer of first electrodes, a first insulating layer, a luminous layer, a second insulating layer and a second electrically conductive layer of second electrodes; previously forming a pattern of the first conductive layer all over a zone for formation of the first electrodes and a zone for formation of electrode terminals; and immersing it into a plating solution to selectively form a terminal pattern only on the first conductive layer, whereby the need for pattern aligning operation can be eliminated, only immersion of it into the plating solution enables easy formation of the precise terminal pattern without providing any damage to the elements of the EL device, and the obtained device can maintain its stable characteristics for a long period of time.
    Type: Grant
    Filed: March 25, 1991
    Date of Patent: November 17, 1992
    Assignee: Kabushiki Kaisha Komatsu Seisakushi
    Inventors: Takashi Nire, Satoshi Tanda
  • Patent number: 5141825
    Abstract: An electrode is attached to a solid electrolyte material by: (1) mixing a metallic nickel component and 1 wt% to 10 wt% of yttria stabilized zirconia having particle diameters up to 3 micrometers with an organic binder solution to form a slurry, (2) applying the slurry to a solid zirconia electrolyte material, (3) heating the slurry to drive off the organic binder and form a porous layer of metallic nickel substantially surrounded and separated by the zirconia particles, and (4) electro-chemical vapor depositing a skeletal structure between and around the metallic nickel and the zirconia particles where the metallic nickel components do not substantially sinter to each other, yet the layer remains porous.
    Type: Grant
    Filed: July 26, 1991
    Date of Patent: August 25, 1992
    Assignee: Westinghouse Electric Corp.
    Inventor: Russel R. Jensen
  • Patent number: 5139829
    Abstract: A method for producing an oxygen detection element having uniform pores and an excellent durability against toxic matter contained in the measurement gas. The method includes a first step of applying a paste to be sintered to form a catalytic electrode layer onto at least a part of an oxygen-ion conductive solid-state electrolytic body, and sintering the paste to thereby form said catalytic electrode layer at a predetermined position on said surface of said solid-state electrolytic body after sintering, and a second step of forming an electrode protection layer for coating and protecting at least a part of the catalytic electrode layer either after or simultaneous with the first step. In a first embodiment, the paste contains mainly a noble metal powder acting as a catalyst and an organic metal compound, in a second embodiment mainly co-precipitated powder consisting of a noble metal and a metal hydroxide, and in a third embodiment mainly noble metal powder and a powder of a metal other than a noble metal.
    Type: Grant
    Filed: July 9, 1991
    Date of Patent: August 18, 1992
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Ken Minoha, Haruhisa Shiomi, Yoshitake Kawachi
  • Patent number: 5139818
    Abstract: Photochemical and electroless metallization techniques have been combined to create high resolution circuits with line widths and spaces of about one mil on alumina substrates. In this process, small amounts of a xylene-soluble platinum metallo-organic compound are first applied to the surface of the alumina substrate. A mask is then used to selectively expose the platinum metallo-organic compound to ultraviolet light in the areas that are to be metallized, so as to transform the platinum metallo-organic compound into a xylene-insoluble form. After a xylene rinse removes the original soluble platinum compound from the unexposed areas, the substrate is fired in air at about 450.degree. C. for about five minutes, so as to pyrolize the insoluble, irradiated platinum metallo-organic compound into catalytically active platinum. This is followed by electroless deposition of copper onto the ultraviolet-treated regions where the catalytically active platinum resides.
    Type: Grant
    Filed: June 6, 1991
    Date of Patent: August 18, 1992
    Assignee: General Motors Corporation
    Inventor: Andrew M. Mance
  • Patent number: 5137868
    Abstract: A method for manufacturing a superconducting device comprises the steps of forming a blocking film by means of an optical vapor deposit reaction on the surface of an oxide superconducting material; and then adding oxygen into the oxide superconducting material by the implementation of a heat treatment.
    Type: Grant
    Filed: July 25, 1990
    Date of Patent: August 11, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5133989
    Abstract: The present invention provides a process for producing a metal-polyimide composite material such as a wiring board. In production thereof, deterioration of polyamide film due to oxidation during imidization of a polyimide precursor in contact with metal such as copper or silver can be prevented. The present invention is characterized by using a polyimide precursor having an acidic functional group which is masked. Examples of the polyamide precursor are polyamic acid epoxy adducts, amido polyamic acids, silylated polyamic acids, etc.
    Type: Grant
    Filed: September 27, 1989
    Date of Patent: July 28, 1992
    Assignee: Hitachi, Ltd.
    Inventors: Shunichi Numata, Takao Miwa, Takayoshi Ikeda, Koji Fujisaki, Hisae Shimanoki, Kunio Miyazaki, Osamu Miura, Ryuji Watanabe, Toshio Miyamoto, Yukio Okoshi
  • Patent number: 5130172
    Abstract: A process for coating metal on a substrate. The process uses organometallic compounds such as (trimethyl)(cyclopentadienyl) platinum in the presence of a reducing fluid such as hydrogen gas to produce high purity films capable of selective deposition on substrates containing, for example, tungsten and silicon. The films are deposited using chemical vapor deposition (CVD) or gas phase laser deposition. The invention also comprises devices made from the process of the invention.
    Type: Grant
    Filed: October 26, 1989
    Date of Patent: July 14, 1992
    Assignee: The Regents of the University of California
    Inventors: Robert F. Hicks, Herbert D. Kaesz, Dagiang Xu
  • Patent number: 5124175
    Abstract: Solder reflow on an electrical interconnect substrate between a plurality of electrical contacts. The method includes coating the contacts with tin/lead solder, depositing a wetting metal between the contacts, and heating the substrate to at least the melting point of the solder so that the solder melts, reflows across the wetting metal and connects or links the contacts. The entire surface of a customizable copper/polyimide substrate can be personalized by solder links and TAB leads from surface-mounted integrated circuits can simultaneously be soldered to the substrate.
    Type: Grant
    Filed: November 15, 1990
    Date of Patent: June 23, 1992
    Assignee: Microelectronics and Computer Technology Corporation
    Inventors: Robert F. Miracky, Tom J. Hirsch, Colin A. MacKay
  • Patent number: 5110620
    Abstract: An electret sheet comprises a porous sheet made of a dielectric polymer and at least one solid material selected from the group consisting of organic materials, inorganic materials, and metallic materials, the porous sheet having the material spaced at various intervals and a method for the manufacture of the said electret sheet.
    Type: Grant
    Filed: October 3, 1991
    Date of Patent: May 5, 1992
    Assignee: Toyo Boseki Kabushiki Kaisha
    Inventors: Yatsuhiro Tani, Satoshi Takase
  • Patent number: 5110384
    Abstract: A process for making an electrically conductive pattern on a substrate including forming a patterned adhesive layer on the substrate, applying a conductive metal powder to the adhesive layer, and in a second coating pass, applying a powder containing supplementary elements to the pattern. The patterned substrate is fired to volatilize theadhesive layer and sinter the powders. This process can be used to make printed circuits on ceramic substrates which are useful in hybrid circuits, for example.
    Type: Grant
    Filed: April 17, 1990
    Date of Patent: May 5, 1992
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Dietmar Dudek, Thomas Pfeiffer
  • Patent number: 5104684
    Abstract: Metal is deposited in lines of submicron width by scanning a focused ion beam along a substrate in the presence a vapor of a precursor platinum compound. High deposition rates and steep walls may be obtained by milling a cavity or trench with the focused beam and then locally applying the precursor vapor while scanning of the beam continues. Platinum containing features deposited in this way extend horizontally between wires, or vertically between layers to form conductive interconnects in integrated circuits, and also form pattern repairs in x-ray masks. The platinum chemistry is compatible with silicon wafer processing.
    Type: Grant
    Filed: May 25, 1990
    Date of Patent: April 14, 1992
    Assignee: Massachusetts Institute of Technology
    Inventors: Tao Tao, John Melngailis
  • Patent number: 5102862
    Abstract: A superconductive device and method for the manufacture thereof is disclosed, having a tunneling Josephson element comprising a first oxide superconductor electrode, a blocking layer consisting of a metal substantially inert to oxygen formed on the surface of the oxide superconductor, an insulating thin film layer formed on the blocking layer, and a second superconductor electrode opposing said first electrode formed on the insulating thin film.
    Type: Grant
    Filed: August 15, 1990
    Date of Patent: April 7, 1992
    Assignee: The University of Tokyo
    Inventors: Yoichi Okabe, Atsuki Inoue, Hideomi Koinuma
  • Patent number: 5100693
    Abstract: Metal is photolytically deposited from solution onto a substrate in contact with the solution by irradiating with light a solution containing a solubilized metal source and an organic compound containing a plurality of proximal Lewis base substituent groups so as to be capable of promoting the photoreduction of the metal onto the substrate.
    Type: Grant
    Filed: June 5, 1990
    Date of Patent: March 31, 1992
    Assignee: The Research Foundation of State University of New York
    Inventors: John J. Eisch, Marek P. Boleslawski
  • Patent number: 5096737
    Abstract: Chemical vapor deposition precursors for depositing copper, silver, rhodium and iridium metals on substrates comprise ligand stabilized +1 metal beta-diketonate coordination complexes of said metals. Uses of such precursors in CVD processes are also provided.
    Type: Grant
    Filed: October 24, 1990
    Date of Patent: March 17, 1992
    Assignee: International Business Machines Corporation
    Inventors: Thomas H. Baum, Carl E. Larson, Scott K. Reynolds
  • Patent number: 5091362
    Abstract: A process for silver coating superconducting ceramic powder by(1) mixing AgNO.sub.3 with the superconducting ceramic powder particles;(2) melting the AgNO.sub.3 so that it wets and forms a uniform coating over he surfaces of the particles; and(3) decomposing the AgNO.sub.3 to form a thin, uniform coating of silver metal on the surfaces of the particles.The product is a loose powder of superconducting ceramic particles which are uniformly coated with silver metal. The powder can be cold worked (e.g., swaged, forged, etc.) to form superconducting structures such as rods or wires.
    Type: Grant
    Filed: October 10, 1990
    Date of Patent: February 25, 1992
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: William A. Ferrando
  • Patent number: 5066380
    Abstract: Cathodes useful in electrolytic cells, such as a chlor-alkali cell, are disclosed which have a metallic-surfaced substrate coated with an electrocatalytic coating. The electrocatalytic coating includes palladium and at least one primary electrocatlaytic metal, such as a platinum group metal. The coating optionally includes at least one secondary electrocatalytic metal, such as nickel, cobalt, iron, copper, manganese, molybdenum, cadmium, chromium, tin and silicon. Also disclosed is a non-electrolytic reduction method for preparing the cathodes. The method provides a tightly adherent coating, improves electrocatalyst loading and reduces cathode production costs.
    Type: Grant
    Filed: May 29, 1990
    Date of Patent: November 19, 1991
    Assignee: The Dow Chemical Company
    Inventors: Carl E. Byrd, Stephen L. Kelly, Richard N. Beaver
  • Patent number: 5064685
    Abstract: A conductive interconnection (27) on a substrate (11) is made by applying a metal-organic compound (25) to the substrate, exposing the metal-organic compound to laser beam radiation (14) in which the power level has been ramped to some specific level and, thereafter, moving the substrate with respect to the laser beam. The movement of the substrate is at an applied rate of speed such that the temperature within the metal-organic compound impinged by the laser beam is properly ramped with respect to time. This leaves a dependable metal deposition (27) which may be monitored through a viewing system (21).
    Type: Grant
    Filed: August 23, 1989
    Date of Patent: November 12, 1991
    Assignee: AT&T Laboratories
    Inventors: Ami Kestenbaum, Anthony J. Serafino
  • Patent number: 5061350
    Abstract: A detecting element having desired values for electrical resistance and resistance temperature coefficient can be obtained in a simple manner by a method wherein an electrically conductive member is arranged on a substrate, a metal lead is fixed to the substrate in order to connect the electrically conductive member to an external circuit through the metal lead, and the electrically conductive member is subjected to a heat treatment. Specifically, an electrical current is passed through the electrically conductive member to heat the detecting element before completion to a predetermined temperature and to form a glass protecting film by the heat generation of the member itself.
    Type: Grant
    Filed: October 27, 1989
    Date of Patent: October 29, 1991
    Assignee: NGK Insulators, Ltd.
    Inventors: Fujio Ishiguro, Toru Kikuchi
  • Patent number: 5059449
    Abstract: From a solution comprising a salt of a noble metal, for example Pd, and ammonia or amine a metal track is deposited on a substrate surface which may be an insulator, semiconductor or conductor, by means of a laser beam.
    Type: Grant
    Filed: August 15, 1989
    Date of Patent: October 22, 1991
    Assignee: U.S. Philips Corporation
    Inventors: Andreas M. T. P. van der Putten, Johannes M. G. Rikken, Johannes W. M. Jacobs, Cornells G. C. M. De Kort
  • Patent number: 5035918
    Abstract: This invention is directed to a non-flammable plating resist with improved adhesion and edge covering characteristics which permits its selective removal by an ordinary laser ablation process or an energy efficient laser assisted process, and to the preferred method in using same to selectively plate a metal substrate, such as a nickel plated, electrically conductive metal with a precious metal. The preferred method comprises the steps of applying a thin uniform layer of such resist onto the substrate and drying the same in situ to a thickness greater than 100 microinches and less than 500 microinches, and drying same in situ, where such resist (a) is resistant to deterioration by chemical plating solutions of such precious metal, (b) is readily strippable in alkaline solutions, and (c) has a flashpoint in excess of 100.degree. F. A preferred formulation for such resist comprises, by weight, the following:______________________________________ Styrene acrylic co-polymer 61.5% suspension Butyl cellosolve 3.
    Type: Grant
    Filed: April 26, 1989
    Date of Patent: July 30, 1991
    Assignee: AMP Incorporated
    Inventor: Navin N. Vyas
  • Patent number: 5035789
    Abstract: Cathodes useful in an electrolytic cell, such as a chlor-alkali cell, are disclosed which have a metallic-surfaced substrate coated with a catalytic coating composition. In one aspect, the catalytic coating includes a base layer of at least one primary electrocatalytic metal with particles of at least one electrocatalytic metal oxide entrapped therein. In another aspect, at least one upper oxide layer is formed on the base layer. Each upper oxide layer includes a substantially heterogeneous mixture of at least one primary electrocatalytic metal oxide and at least one secondary electrocatalytic metal oxide. The catalytic coatings are tightly adherent to the underlying substrate, resist loss during cell operation and exhibit low hydrogen overvoltage potentials. Also disclosed are methods for preparing the cathodes.
    Type: Grant
    Filed: May 29, 1990
    Date of Patent: July 30, 1991
    Assignee: The Dow Chemical Company
    Inventors: Richard N. Beaver, Carl E. Byrd, Stephen L. Kelly
  • Patent number: 5031290
    Abstract: A process for the production of an open metal mesh the surfaces of which are coated with a coating of an electrocatalytically-active material, the process comprising forming a plurality of slits in a sheet of metal, applying a coating of an electrocatalytically-active material to the slit sheet, and stretching the coated sheet to expand the sheet and form the open mesh. The mesh is suitable for use as an anode in cathodic protection of steel-containing structures, for example, steel-reinforced concrete structures.
    Type: Grant
    Filed: February 14, 1990
    Date of Patent: July 16, 1991
    Assignee: Imperial Chemical Industries PLC
    Inventors: Colin Brereton, Michael J. Edwards, Peter C. S. Hayfield
  • Patent number: 5032421
    Abstract: This invention includes a method featuring steps having a transport (64, 68) to carry metal articles (10, 14) through a vacuum chamber (62, 66, 90) containing a plasma cleaning station (32) followed by exposure to an evaporant of metal (42) generated by an E-Beam (50) caused to condense on the articles in high vacuum. A channel structure (51) is provided to cause selective condensation upon the surface of said articles. The apparatus includes several stations (101, 102, 103) to provide multiple coatings on one or both sides of an article to be coated.
    Type: Grant
    Filed: August 21, 1990
    Date of Patent: July 16, 1991
    Assignee: AMP Incorporated
    Inventors: Srinivasan V. Sarma, Walajabad S. Sampath, Nagarajan Subramanian, Paul J. Wilbur
  • Patent number: 5032248
    Abstract: The invention relates to a gas sensor for measuring an air-fuel ratio of an air-fuel mixture of an internal combustion engine and to a method of manufacturing the gas sensor. The sensor of the invention comprises: a solid state electrolyte layer made of an oxygen ion conductive metal oxide; a first electrode of a porous thin film having the catalyst function which was coated on one surface of the solid state electrolyte layer; a second electrode of a porous thin film having the catalyst function which was coated on the other surface of the solid state electrolyte layer; an electrode shielding layer made of a sintered material of ultra fine particulates whose average grain diameter is 1 .mu.m or less which covers the surface other than the region of a predetermined area of the second electrode; and a gas diffusion layer made of a porous electric insulative metal oxide which covers the region of the predetermined area of at least the second electrode.
    Type: Grant
    Filed: June 7, 1989
    Date of Patent: July 16, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Masatoshi Kanamaru, Takeshi Harada, Yoshiro Ibaraki, Sadayasu Ueno, Norio Ichikawa
  • Patent number: 5028454
    Abstract: A method for electrolessly plating portions of semiconductor devices and the like comprises the steps of providing a first metal having a higher electromotive series than a coating metal, galvanically coupling a second metal to the first metal wherein a portion of the first metal remains exposed and then subjecting the second metal and the exposed portion of the first metal to an electroless coating metal plating solution. The method employs no masks and is ideal for plating small areas such as single ball bonds and limited numbers of ball bonds on a single semiconductor chip.
    Type: Grant
    Filed: October 16, 1989
    Date of Patent: July 2, 1991
    Assignee: Motorola Inc.
    Inventors: William H. Lytle, Dennis R. Olsen
  • Patent number: 5023110
    Abstract: A process for producing an electron emission device having voltage controlled negative resistance (VCNR) characteristics. A conductive thin film containing fine particles of a metal, metal oxide, semiconductor or the like is formed on a substrate between opposing electrodes which are also form on the substrate. A voltage is applied across the conductive thin film to generate heat with which the conductive thin film is heat treated to have an island structure which is formed of a spatially discontinuous film of fine particles and which serves as an electron emitting region.
    Type: Grant
    Filed: May 1, 1989
    Date of Patent: June 11, 1991
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ichiro Nomura, Tetsuya Kaneko, Yoshikazu Banno, Toshihiko Takeda
  • Patent number: 5019415
    Abstract: The process for depositing an adherent silver film, especially on a nonconducting substrate, involves depositing the silver film from the gas phase. A plasma discharge in a gas containing volatile silver organic compounds is used. The silver compounds advantageously contain silver atoms which are bonded to an sp.sup.2 -hybridized carbon atom and are halogen-containing, particularly fluorine-containing compounds. The compounds CF.sub.3 --CAg.dbd.CF--CF.sub.3, CF.sub.3 --CAg.dbd.CF.sub.2 and pentafluorophenyl silver may be used. The silver film so formed may be strengthened electrochemically or by chemical reduction. The silver film products are useful as electrically conducting, decorative or reflective layers.
    Type: Grant
    Filed: August 16, 1989
    Date of Patent: May 28, 1991
    Assignee: Schering Aktiengesellschaft
    Inventors: Christian Oehr, Harald Suhr
  • Patent number: 5019531
    Abstract: A process for growing a thin metallic film of gold or copper selectively on a predetermined area of a substrate. An organic complex or organometallic compound of gold or copper as a starting material is heated to evaporate the same, while a substrate having on the surface thereof a metal or a metallic silicide as a first material and an oxide or a nitride as a second material is heated at a temperature equal to or higher than the decomposition temperature, on the first material, of a vapor of the starting material. The vapor of the evaporated starting material is fed together with a reducing gas onto the heated substrate to selectively grow a thin metallic film of gold or copper only on the surface of the first material.
    Type: Grant
    Filed: May 19, 1989
    Date of Patent: May 28, 1991
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Nobuyoshi Awaya, Yoshinobu Arita
  • Patent number: 5015620
    Abstract: A high-T.sub.c superconductor contact unit having low interface resistivity is disclosed, as is a method for making the unit. An inert metal is deposited on the surface of the superconductor, which surface is preferably non-degraded, to form a unit with the surface of the superconductor, and where temperatures as high as 500.degree. C. to 700.degree. C. can be tolerated, the unit is oxygen annealed to establish a still lower surface resistivity between the surface of the high-T.sub.c superconductor and the inert metal, including a low surface resistivity of about 10.sup.-10 .OMEGA.-cm.sup.2 at high-T.sub.c superconductor operating temperatures. The superconductor is a metal-oxide superconductor, and may be rare earth, thallium, or bismuth based.
    Type: Grant
    Filed: November 22, 1988
    Date of Patent: May 14, 1991
    Assignees: The United States of America as represented by the Secretary of Commerce, Westinghouse Electric Corporation
    Inventors: John W. Ekin, Armand J. Panson, Betty A. Blankenship
  • Patent number: 5013581
    Abstract: The method of making an electrically conductive polymer-metal compound having a predetermined electrical conductivity on a substrate includes the steps of preparing a reaction mixture of a gaseous metallo-organic compound, a metal-free gaseous organic compound and a carrier gas such as argon or mixtures of argon and hydrogen, producing a glow discharge zone in the reaction mixture and exposing the substrate to action of the gaseous metallo-organic compound and the metal-free gaseous organic compound in the glow discharge zone in such a way as to produce a film or layer of the polymer-metal compound with a predetermined electrical conductivity. The selection of the electrical conductivity can be made by setting at least one of a number of parameters of the process including the pressure and temperature of the glow discharge zone, the power density in the glow discharge and particularly the ratio of the amount of metal-free gaseous organic compound to carrier gas.
    Type: Grant
    Filed: August 2, 1990
    Date of Patent: May 7, 1991
    Assignee: Schering Aktiengesellschaft
    Inventors: Harald Suhr, Angelika Etspuler, Ernst Feurer, Christian Oehr
  • Patent number: 5009927
    Abstract: A thin film of an electrically conductive material (16) is applied to form an electrically conductive surface (22) on a surface (18) of a polymer coated fabric (14). The method involves coating a woven glass fiber fabric (14) with a polymer solution (6), curing the polymer solution on the glass fiber fabric and then depositing the electrically conductive material onto the cured polymer surface, typically by a sputtering technique, to form a flexible, electrically conductive fabric (24). This method helps to ensure that when the electrically conductive material is applied, the electrically conductive surface formed is continuous and is of a controlled, generally constant, thickness. The substantial continuity of the electrically conductive surface is maintained even when the electrically conductive fabric is flexed during subsequent manufacturing operations.
    Type: Grant
    Filed: November 29, 1988
    Date of Patent: April 23, 1991
    Assignee: Hexcel Corporation
    Inventors: Willard C. Cloyd, Robert M. Nelson