Abstract: There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.

Abstract: A diamond thin film coating method is provided that enables, with no need for an intermediate layer, the formation of a diamond thin film, which has conventionally been considered difficult because cobalt contained in a binding phase of a cemented carbide provides a catalysis for the formation of graphite. Cobalt in a binding phase (11) present in a surface of a cemented carbide substrate member comprised of a hard phase of a carbide (2) and a binding phase (1) containing cobalt, is silicidated into silicide (3), and thereafter the diamond thin film is formed.

Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

Abstract: A web substrate atomic layer deposition system includes at least one roller that transports a surface of a web substrate through a plurality of processing chambers. The plurality of processing chambers includes a first precursor reaction chamber that exposes the surface of the web substrate to a desired partial pressure of first precursor gas, thereby forming a first layer on the surface of the web substrate. A purging chamber purges the surface of the web substrate with a purge gas. A vacuum chamber removes gas from the surface of the substrate. A second precursor reaction chamber exposes the surface of the web substrate to a desired partial pressure of the second precursor gas, thereby forming a second layer on the surface of the web substrate.

Abstract: Some embodiments include deposition systems configured for reclaiming unreacted precursor with one or more traps provided downstream of a reaction chamber. Some of the deposition systems may utilize two or more traps that are connected in parallel relative to one another and configured so that the traps may be alternately utilized for trapping precursor and releasing trapped precursor back into the reaction chamber. Some of the deposition systems may be configured for ALD, and some may be configured for CVD.

Abstract: In a film deposition apparatus which deposits a thin film on a substrate by supplying first and second reactive gases in a vacuum chamber, there are provided a turntable, a first reactive gas supplying portion and a second reactive gas supplying portion which are arranged to extend from circumferential positions of the turntable to a center of rotation of the turntable, a first separation gas supplying portion arranged between the first and second reactive gas supplying portions, a first space having a first height and including the first separation gas supplying portion, a second space having a second height and including the second reactive gas supplying portion, a third space having a height lower than the first height and the second height and including the first separation gas supplying portion, a position detecting unit detecting a rotation position of the turntable, and a detection part arranged at a circumferential portion of the turntable and detected by the position detecting unit.

Abstract: A body of iron, steel or other such ferrous material is protected from thermochemical erosion by a layer of an iron nitride having a relatively low nitrogen content. The atomic percentage of nitrogen in the iron nitride layer is no greater than 20%, and in specific embodiments is in the range of 10-15%. The nitride layer may have a layer of a refractory material deposited thereatop. Some refractory materials include metals such as chromium. The invention has specific utility for protecting gun barrels, turbines, internal combustion engines, drilling equipment, machine tools, aerospace systems and chemical reactors which are exposed to extreme conditions of temperature and pressure. Specifically disclosed is a gun barrel which incorporates the invention.

Abstract: A method for film formation is provided that can significantly suppress the amount of a source gas consumed in the formation of a copper film on a substrate by supplying a gas of a metallic source material complex, for example, copper acetate, produced by the sublimation of a solid source material, as a source gas to the substrate to cause a chemical reaction of the source gas. A source gas produced by the sublimation of a solid source material is supplied into a processing chamber, and the source material is adsorbed as a solid onto an adsorption/desorption member within the processing chamber. Next, the source gas supply and exhaust are stopped, and the processing chamber is brought to the state of a closed space. Thereafter, the substrate is heated, and the source material is chemically reacted on the substrate to form a thin film on the substrate.

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

Abstract: This relates to an improvement to the process of aluminization or activated cementation in which a donor cement containing the aluminium is attacked at high temperature and in a neutral or reducing atmosphere by a gaseous ammonium halide to form a gaseous aluminium halide which decomposes on contact with a nickel-based substrate depositing aluminium metal thereon. According to the invention the aluminium halide is at least partly replaced by a zirconium halide leading to the inclusion of zirconium in the deposit. Improvement in the protection of the hot parts of aircraft engines made of nickel-based superalloy. No figure is to be published.

Abstract: A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.

Abstract: The present invention provides for titanium oxide-based photocatalysts having a general formula of TiO2-X-?CXN? and self-cleaning materials that are prepared by substituting O of pure TiO2 with C and N. A preparation method comprising a process for forming thin films of TiO2-X-?CXN? by using gases such as Ar, N2, CO2, CO and O are used for reactive sputtering, and a process of heat treating at around 500° C., thereby crystallizing, is provided. The titanium oxide-based photocatalysts having a general formula of TiO2-X-?CXN? and self-cleaning materials according to the present invention have a smaller optical bandgap compared to pure titanium oxides, and therefore, the photocatalysts can be activated under the visible light range. In addition, they comprise only pure anatase crystallization phase, and since the crystallized particles are small in size, the efficiency and self-cleaning effect of the photocatalysts are very high.

Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13.56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 ?.

Abstract: Thermal processing system and method for forming an oxide layer on substrates. The thermal processing system has a gas injector with first and second fluid lumens confining first and second process gases, such an molecular hydrogen and molecular oxygen, from each other and another fluid lumen that receives the process gases from the first and second fluid lumens. The first and second process gases combine and react in this fluid lumen to form a reaction product. The reaction product is injected from this fluid lumen into a process chamber of the thermal processing system, where substrates are exposed to the reaction product resulting in formation of an oxide layer.

Abstract: Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2 or F2 or CnHm) is irradiated to provide a cold plasma of selected target species particles, such as atomic H or F, in a first chamber. The target species particles are directed toward an array of CNTs located in a second chamber while suppressing transport of ultraviolet radiation to the second chamber. A CNT array is functionalized with the target species particles, at or below room temperature, to a point of saturation, in an exposure time interval no longer than about 30 sec. *Discrimination against non-target species is provided by (i) use of a target species having a lifetime that is much greater than a lifetime of a non-target species and/or (2) use of an applied magnetic field to discriminate between charged particle trajectories for target species and for non-target species.

Abstract: A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500° C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500° C. throughout deposition of the bulk layer.

Abstract: A method for forming multi-metallic sites on a substrate is disclosed and described. A substrate including active groups such as hydroxyl can be reacted with a pretarget metal complex. The target metal attached to the active group can then be reacted with a secondary metal complex such that an oxidation-reduction (redox) reaction occurs to form a multi-metallic species. The substrate can be a highly porous material such as aerogels, xerogels, zeolites, and similar materials. Additional metal complexes can be reacted to increase catalyst loading or control co-catalyst content. The resulting compounds can be oxidized to form oxides or reduced to form metals in the ground state which are suitable for practical use.

Abstract: This invention relates to a separation process comprising (i) introducing a vapor phase mixture into a condensing apparatus, said vapor phase mixture comprising at least one desirable component and at least one undesirable component; (ii) controlling the temperature in the condensing apparatus utilizing a heat-transfer gas; and (iii) operating the condensing apparatus at a temperature and a pressure sufficient to selectively condense at least a portion of said vapor phase mixture and thereby yield a recovered content containing said at least one desirable component. The separation process is useful in semiconductor applications such as recovery of unreacted organometallic compound precursors in chemical vapor deposition or atomic layer deposition processes.

Abstract: The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: A roll to roll rapid thermal processing tool which is used to react a precursor material disposed over a flexible foil substrate to form a solar cell absorber. The RTP tool includes a significantly low aspect ratio process gap through which a flexible foil substrate is moved. A low temperature zone of the RTP tool forms a first portion of the process gap, a high temperature zone of the RTP tool forms a second portion of the process gap, and a buffer zone forms a third portion of the process gap that connects the first portion to the second portion of the gap. The temperature of a section of the flexible foil substrate is increased from the temperature of the low temperature zone to the temperature of the high temperature zone as the section of the continuous workpiece travels through the buffer zone. The buffer zone includes at least one low thermal conductivity section having cavities.

Abstract: Methods and systems for organic vapor jet deposition are provided, where an exhaust is disposed between adjacent nozzles. The exhaust may reduce pressure buildup in the nozzles and between the nozzles and the substrate, leading to improved deposition profiles, resolution, and improved nozzle-to-nozzle uniformity. The exhaust may be in fluid communication with an ambient vacuum, or may be directly connected to a vacuum source.

Abstract: To provide a unit-layer post-treatment catalyst vapor-deposition apparatus and unit-layer post-treatment film forming method capable of improving in-face uniformity, step coverage, and film quality of a silicon nitride film or the like and forming a thin film by performing surface treatment after forming a film for each unit layer.

Abstract: A method of fluorinating the wall surfaces of single wall and double wall polyethylene pipe after it has been extruded and coiled onto a roll or reel. A fluorination apparatus cooperative with a continuous coiled pipe is set forth. In the preferred and illustrated embodiment, a continuous coiled pipe is in sealed communication with a fluorination apparatus that enables a gaseous impregnation of the pipes surfaces with gas exposure including fluorine. When exposed to the fluorine gas the pipes surface is changed creating an improved permeation barrier for fuels and other hazardous fluids. After exposure to the fluorine, the unreacted fluorine is evacuated from the pipe. This procedure can be optionally repeated to increase the levels of fluorination.

Abstract: A coated aluminum component for a substrate processing chamber comprises an aluminum component having a surface; a first aluminum oxide layer formed on the surface of the aluminum component, the aluminum oxide layer having a surface comprising penetrating surface features; and a second aluminum oxide layer on the first aluminum oxide layer, the second aluminum oxide layer substantially completely filling the penetrating surface features of the first aluminum oxide layer. A method of forming the coated aluminum component is also described.

Abstract: A micro-optical element is produced through vapor deposition techniques, such as atomic layer deposition. An optical structure having a surface with uneven structures is exposed to one or more precursor vapors to create a self-limiting film growth on the surface of the optical structure. The film thickness may be increased and controlled by subsequent exposures. The resulting film conforms to surface structures having varying complex dimensions.

Abstract: A display front plane having an anti-reflection film in thickness uniformity and good adhesion between the anti-reflection film and the base material is supplied. Each of a display lenticular lens and a display fresnel lens having a sophisticated anti-reflection function with a high total light transmittance is also to be provided. As for the display front plane, lenticular lens, fresnel lens relating to the present invention, gas containing a gas for thin film formation is introduced into a discharge space under the atmospheric pressure or the pressure close to it and the gas is activated by applying a high frequency electric field in the discharge space mentioned above. And then, anti-reflection film at least on one side of the surface of the base material is formed by exposing the base material in the aforementioned activated gas.

Abstract: A reactor vessel is provided with a solvent in a supercritical PVT state for use in depositing films on a deposition substrate. A metal organic precursor is dissolved in the supercritical solvent, as is a reaction agent. A chemical reaction deposits a film, such as a metal film on a semiconducting wafer, and reaction byproducts including a ligand ensue from the chemical reaction. Effluent from the reactor vessel is submitted to a precursor-forming agent that reacts with the ligand to rejuvenate the precursor. Alternatively, the precursor-forming agent can be used for point-of-use formation of the precursor with or without recycle of reaction byproducts.

Abstract: A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.

Abstract: Protective layers are formed on a surface of an atomic layer deposition (ALD) or chemical vapor deposition (CVD) reactor. Parts defining a reaction space for an ALD or CVD reactor can be treated, in situ or ex situ, with chemicals that deactivate reactive sites on the reaction space surface(s). A pre-treatment step can maximize the available reactive sites prior to the treatment step. With reactive sites deactivated by adsorbed treatment reactant, during subsequent processing the reactant gases have reduced reactivity or deposition upon these treated surfaces. Accordingly, purge steps can be greatly shortened and a greater number of runs can be conducted between cleaning steps to remove built-up deposition on the reactor walls.

Abstract: One or more substrates may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The one or more coiled substrates are placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated with a surface treatment process. One or more spacers may be placed between adjacent layers of the coiled substrate before a full turn of the substrate has been coiled around a carousel.

Abstract: Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

Abstract: The present invention provides a solid material comprising a solid substrate having a thin metal film and methods for producing the same. The method generally involves using a plurality self-limiting reactions to control the thickness of the metal film.

Abstract: In accordance with one aspect of the present invention, a process for forming a specific reactive element barrier on a titanium and aluminum containing substrate is provided. The process includes creating a dry air atmosphere with a concentration of water vapor below about 750 ppm at a temperature above about 550° C. contiguous to a surface of the substrate on which the barrier layer is to be formed. The temperature is maintained above 550° C. and the water vapor concentration is maintained below about 100 ppm while the water vapor in the dry air atmosphere is reacted with specific reactive elements at the substrate surface. The reaction forms a specific reactive element oxide barrier layer which is strongly bonded to the substrate surface. The barrier layer includes an aluminum oxide layer at the substrate/barrier layer interface and a second oxide layer at a barrier layer/atmosphere interface.

Abstract: An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.

Abstract: A method for forming an aluminide coating on a turbine engine component having an external surface and an internal cavity defined by an internal surface that is connected to the external surface by at least one hole. The method is conducted in a vapor coating container having a hollow interior coating chamber, and includes the steps of loading the coating chamber with the component to be coated; flowing a tri-alkyl aluminum coating gas into the loaded coating chamber at a specified temperature, pressure, and time to deposit an aluminum coating on the external and internal surfaces of the component; and heating the component in a nonoxidizing atmosphere at a specified temperature and time to form an aluminide coating on the external and internal surfaces. The coated component is typically then maintained at an elevated temperature in the presence of oxygen to form an oxide coating on the external and internal surfaces of the component.

Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surface sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.

Abstract: A process for reacting a gaseous species with a substrate includes placing the substrate in a space, heating the space, introducing the gaseous species into the space, and cooling the space. Introducing the gaseous species into the space includes introducing the gaseous species into the space before the substrate reaches a steady state temperature and/or reacting the gaseous species with the substrate includes reacting the gaseous species with the substrate while cooling the space.

Abstract: An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 1010 ohm/square. The coating is preferably higher transparent.

Abstract: The invention comprises a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. At least one oxidizer is flowed to the reactor under conditions effective to deposit a barium strontium titanate comprising dielectric layer on the substrate. In one implementation, the oxidizer comprises H2O. In one implementation, the oxidizer comprises H2O2. In one implementation, the oxidizer comprises at least H2O and at least another oxidizer selected from the group consisting of O2, O3, NOx, N2O, and H2O2, where “x” is at least 1. In one implementation, the oxidizer comprises at least H2O2 and at least another oxidizer selected from the group consisting of O2, O3, NOx, and N2O, where “x” is at least 1.

Abstract: A method of forming an insulating film containing silicon oxy-nitride includes a loading step, temperature raising step, oxidation step, cycle purge step, and annealing step, in this order. The temperature raising step is performed while supplying nitrogen gas and oxygen gas for preventing a silicon layer surface from being nitrided, at a supply ratio 100:1 to 1000:1. The oxidation step is performed at a temperature of 700 to 950° C. while supplying a gas that contains 1 to 5 vol % of water vapor and 95 to 99 vol % of nitrogen gas, to form a silicon oxide film. The annealing step is performed at a temperature of 800 to 950° C. while supplying a gas that contains 10 to 100 vol % of nitrogen monoxide gas, to convert a portion of the silicon oxide film into silicon oxy-nitride.

Abstract: A method of controlling gas flow to a semiconductor processing reactor includes opening a first gas manifold inlet valve coupled between a first regulator and a gas manifold; regulating a flow rate of a flow of a first process gas through the first gas manifold inlet valve to the gas manifold with the first regulator; opening a second gas manifold inlet valve coupled between a second regulator and the gas manifold; and regulating a flow rate of a flow of a second process gas through the second gas manifold inlet valve to the gas manifold with the second regulator. The first process gas and the second process gas mix in the gas manifold.

Abstract: A method for forming a chromium-rich layer on the surface of a nickel alloy workpiece containing chromium includes heating the workpiece to a stable temperature of about 1100° C., and then exposing the workpiece to a gaseous mixture containing water vapor and one or more non-oxidizing gases for a short period of time. The process conditions are compatible with high temperature annealing and can be performed simultaneously with, or in conjunction with, high temperature annealing.

Abstract: A method of forming a layer over a substrate is provided. Generally, a layer of a first reactive species is deposited over the substrate. The layer of the first reactive species is reacted with a second reactive species to create a first product. Unreacted reactive species is preferentially desorbed leaving a layer of the first product.

Abstract: Provided is a method of depositing a thin film on a wafer using an aluminum compound. The method includes (S1) mounting the wafer on the wafer block; and (S2) depositing an Al2O3 thin film. Step (S2) includes (S2-1) feeding ozone by spraying ozone through the first spray holes and spraying an inert gas through the second spray holes; (S2-2) purging the ozone by stopping the spraying of the ozone, spraying the inert gas through the first spray holes, and spraying the same inert gas as in step (S2-1) through the second spray holes; (S2-3) feeding TMA by spraying the TMA, which is transferred by a carried gas, through the second spray holes and spraying the inert gas through the first spray holes; and (S2-4) purging the TMA by stopping the spraying of the TMA, spraying the same carrier gas as in step (S2-3) through the second spray holes, and spraying the same inert gas as in step (S2-3) through the first spray holes.

Abstract: A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.

Abstract: A process for modifying the surface of a substrate containing a polymeric material by contacting the surface with the modifying agent to bond the modifying agent to the surface the process comprising providing a solution of the modifying agent in a solvent and subjecting the solution of the modifying agent to a zone of elevated temperature to vaporize the solvent and provide diffuse contact between the modifying agent and the surface of the substrate.

Abstract: The present invention relates to a method for producing an ordered array of nanoparticles on a substrate surface and to a nanomaterial having such an ordered array of nanoparticles. Particularly, but not exclusively, the invention relates to the provision of an ordered array of magnetic nanocrystals on a substrate surface. Although the present invention is not limited to the production of a magnetic array, one important object of the present invention is the production of a material suitable for use as an ultra high density magnetic data storage medium. According to the present invention there is provided a method of producing a structure comprising a plurality of nanoparticles distributed across a surface of a substrate in a predetermined array, the method comprising the steps of: i) providing a substrate which has a passivated surface; ii) depositing nanoparticles on to said surface; and iii) displacing said particles over said surface to configure them in said predetermined array.