Abstract: The invention relates to a method and apparatus for the production of protective coatings on parts. A coating formed in accordance with the invention has a chemical composition and structure gradient across its thickness. The coating is obtained by heating of a composite ingot including a body and at least one insert disposed within the body. As the composite ingot is heated it sequentially evaporates to produce a vapor with a chemical composition varying over the evaporation time period. The composition of the body and composition and location of the insert within the body function to determine the chemical composition of the vapor at any time. Condensation and/or deposition of the vapor onto a substrate forms the inventive coating.

Abstract: A structure protected by a ceramic coating is prepared by providing a substrate having a surface, and depositing a layer of a sacrificial ceramic precursor material, preferably silica, onto the surface of the substrate. The method further includes furnishing a reactive gas, preferably an aluminum-containing gas, that is reactive with the sacrificial ceramic to produce a protective ceramic different from the sacrificial ceramic, and contacting the reactive gas to the layer of the precursor material to produce a protective ceramic layer.

Abstract: A method of forming an article. The method comprises forming a silicon-based substrate that is oxidizable by reaction with an oxidant to form at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Abstract: In a device for forming magnetic film which deposits magnetic material on a substrate 12, a device is provided which, before the magnetic film is formed in a magnetic film-forming chamber 11, cleans one or both of the film-forming face and reverse face of the substrate 12 in a cleaning processing chamber 13. The cleaning mechanism carries out cleaning by placing a substrate on a horseshoe-shaped insulator substrate-holding part 51 which moves up and down, and emission of gas from the reverse face of the substrate and the like is brought about by generating Ar plasma between the upper periphery of the substrate, the substrate and a lower insulator 61 of the substrate.

Abstract: A titanium aluminide substrate (4) is vulnerable to air oxidation, limiting the use of this substrate in a variety of industrial applications, including the aircraft and aerospace industries. A bilayer reactive barrier (2) is formed on a titanium aluminide substrate. The barrier layer includes an &agr;-Al2O3 layer (6) from the reaction of oxygen from the disassociation of water with alumina in a gaseous and water vapor atmosphere at high temperatures and low oxygen concentration. During the process, titanium migrates through the &agr;-Al2O3 to a gas/barrier layer surface (14) and is oxidized to form a Ti2O3 layer (8). A surface of the Ti2O3 layer is subsequently oxidized to form a TiO2 layer (12). In this manner, a triple layer barrier is formed in which the immersible TiO2 and &agr;-Al2O3 are separated by Ti2O3. The three layers are bonded to each with a bond strength greater than 4500 kPa.

Abstract: Superconductor reactors, methods and systems are disclosed.

Abstract: A process for producing a homogeneous oxide layer on metal components includes uniformly heating the components, in all their regions, in a vacuum chamber and, after a predetermined temperature has been reached, exposing the components to an oxygen-containing gas for a predetermined period and at a predetermined pressure. The metal components are coated with MCrAlY or PtAl. The preheating temperature is between 750 and 850° C., preferably, approximately 800° C. Preferably, the thickness of the homogeneous oxide layer is between 0.01 and 5 &mgr;m. The heating is preferably by electron radiation. The predetermined period is approximately 10 minutes, and the predetermined pressure is between 1×10−3 and 8×10−2 mbar.

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.

Abstract: Vacuum/gas phase reactor embodiments used in gas phase dehydroxylation and alkylation reactions are described in which the substrate could be subjected to high vacuum, heated to target temperature, and treated with silane as quickly and efficiently as possible. To better facilitate the silylation and to increase the efficiency of the process, the reactor is designed to contain quasi-catalytic surfaces which can act both as an “activator” to put species in a higher energy state or a highly activated state, and as a “scrubber” to eliminate possible poisons or reactive by-products generated in the silylation reactions. One described embodiment is a hot filament reactor having hot, preferably metallic, solid surfaces within the reactor's chamber in which wafers having mesoporous silicate films are treated. Another is an IR reactor having upper and lower quartz windows sealing the upper and lower periphery of an aluminum annulus to form a heated chamber.

Abstract: A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method comprises the steps of forming a titanium film on the surface of the substrate using a first process gas containing TiCl4 and a reducing gas, subjecting the substrate to a plasma process using a second process gas containing N2 gas and a reducing gas, thereby decreasing Cl in the titanium film and nitriding the surface of the titanium film to form a nitride layer, and forming a barrier metal (e.g., a titanium nitride film) on the titanium film having the nitride layer. Thus, the titanium film and the titanium nitride film are formed on the substrate by lamination. The second process gas contains N2 gas in a ratio of 0.5 or lower with respect to the reducing gas.

Abstract: Method for producing substrates charged with materials, including placing the substrate into an evacuated vacuum container. The substrate is exposed to a reactive gas which is adsorbed on the surface. The surface with the adsorbed reactive gas is exposed to a low-energy plasma discharge with ion energy EI0 on the surface of the substrate of 0<EI0≦20 eV; and an electron energy Eeo of 0 eV<Eeo≦100 eV. The adsorbed reactive gas is allowed to react at least with the cooperation of plasma-generated ions and electrons.

Abstract: An epitaxial growth system is provided with a susceptor driving mechanism for rotationally driving a susceptor in a process chamber and this susceptor driving mechanism has a support shaft coupled to the susceptor, a driven portion, and an annular member with a plurality of permanent magnets arranged outside the driven portion. The driven portion is constructed in such structure that a coating for corrosion prevention consisting of a nickel coating, a chromium coating, and a metal oxide film formed by a passivation treatment with ozone is provided on a surface of a magnetic member.

Abstract: A method for forming a chromium-rich layer on the surface of a nickel alloy workpiece containing chromium includes heating the workpiece to a stable temperature of about 1100° C., and then exposing the workpiece to a gaseous mixture containing water vapor and one or more non-oxidizing gases for a short period of time. The process conditions are compatible with high temperature annealing and can be performed simultaneously with, or in conjunction with, high temperature annealing.

Abstract: A method for applying, in a non-oxidizing atmosphere, a diffusion aluminide coating to a metallic surface of an article combines use of a relatively low aluminide coating temperature in the range of about 1650-1800° F. with a relatively high Al activity Al source material including Al of at least about 40 weight %. Such combination results in an as-deposited aluminide coating comprising a diffusion portion bonded between a metallic substrate and a coating outer portion of a thickness of no greater than about 60% of the thickness of the coating outer portion, typically less than about 1 mil.

Abstract: A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the molecular precursor and to prepare the substrate surface with a reactive chemical in preparation for the next molecular precursor step. By repetitive cycles a composite integrated film is produced. In a preferred embodiment the depositions from the molecular precursor are metals, and the radicals in the alternate steps are used to remove ligands left from the metal precursor reactions, and to oxidize or nitridize the metal surface in subsequent layers. A variety of alternative chemistries are taught for different films, and hardware combinations to practice the invention are taught as well.

Abstract: Method of modifying the surface properties of a substrate by depositing a coating of hydrogenated amorphous silicon on the surface of the substrate and functionalizing the coated substrate by exposing the substrate to a binding reagent having at least one unsaturated hydrocarbon group under pressure and elevated temperature for an effective length of time. The hydrogenated amorphous silicon coating is deposited by exposing the substrate to silicon hydride gas under pressure and elevated temperature for an effective length of time.

Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A process is provided for producing coated synthetic bodies during which, before the coating, the surface to be coated is subjected to a pretreatment in an excited gas atmosphere. The surface is then coated. The gas atmosphere is predominantly formed of a noble gas and nitrogen and/or hydrogen, and the ionic energy in the gas atmosphere and in the are of the surface to be coated is not more than 50 eV. The ionic energy is selected to be not more than 20 eV, preferable not more than 10 eV. The gas atmosphere is excited by means of a plasma discharge or by means of UV radiation.

Abstract: The novel method allows monitoring of nitrogen processes by making use of the fact that the incorporation of nitrogen near the surface in silicon, or in a thin silicon nitride layer on the silicon surface, inhibits the diffusion of oxygen during the subsequent thermal oxidation. Accordingly, the oxidation rate of the thermal oxidation is reduced and the growth of the oxide layer on the silicon surface is inhibited. The thickness of the oxide layer is thus used as a measure for the nitrogen content, i.e., for the quality of the nitrogen process.

Abstract: A process for forming a diffusion aluminide-hafnide coating on an article, such as a component for a gas turbine engine. The process is a vapor phase process that generally entails placing the article in a coating chamber containing a halide activator and at least one donor material. The donor material collectively consists essentially of at least 0.5 weight percent hafnium and at least 20 weight percent aluminum with the balance being chromium and/or cobalt.

Abstract: A process for forming a diffusion aluminide coating on an article, such as a component for a gas turbine engine. The process is a vapor phase process that generally entails placing the article in a coating chamber containing an aluminum donor material, without any halide carrier or inert filler present. The aluminum donor material consists essentially of about 20 to about 70 weight percent aluminum, with the balance being chromium or cobalt. While the article is held out of contact with the donor material, coating is initiated in an inert or reducing atmosphere by heating the article and the donor material to vaporize the aluminum constituent of the donor material, which then condenses on the surface of the article and diffuses into the surface to form a diffusion aluminide coating on the article.

Abstract: A process is provided for producing wear-resistant boride layers on metal material surfaces. The process is characterized in that a boron halide selected from the group comprising boron trifluoride, boron tribromide, boron triiodide and their mixtures is mixed with hydrogen and optionally argon and/or nitrogen, in order to produce a reaction gas containing between 0.1 and 30 vol % boron halide. The resultant mixture is activated by a plasma discharge whereby boron is transferred from the plasma to the metal surface.

Abstract: A process is provided for producing wear-resistant boride layers on metal material surfaces. The process is characterized in that a boron halide selected from the group comprising boron trifluoride, boron tribromide, boron triiodide and their mixtures is mixed with hydrogen and optionally argon and/or nitrogen, in order to produce a reaction gas containing between 0.1 and 30 vol % boron halide. The resultant mixture is activated by a plasma discharge whereby boron is transferred from the plasma to the metal surface.

Abstract: A material having a titanium dioxide crystalline orientation film oriented in a specific direction on a surface of a substrate is produced by spraying a vaporized titanium alkoxide onto the surface of the substrate heated under atmospheric pressure along with an inert gas as a carrier. The material having the titanium dioxide crystalline orientation film is excellent in properties such as an antimicrobial activity, a stain resistance, an ultra-hydrophilic property and the like, and is widely used as kitchen appliances such as cooking utensils, tableware and a refrigerator, tools for medical care, materials for a toilet or a toilet room, a filter of an air-conditioner, electronic parts, building materials and road-associated materials.

Abstract: Methods for preparing organic thin films on substrates, the method comprising the steps of providing a plurality of organic precursors in the vapor phase, and reacting the plurality or organic precursors at a sub-atmospheric pressure. Also included are thin films made by such a method and apparatuses used to conduct such a method. The method is well-suited to the formation of organic light emitting devices and other display-related technologies.

Abstract: The present invention provides a gas introduction pipe in which the least component is replaced when deformation or damage is caused and a magnetic recording medium production method using this gas introduction pipe. The gas introduction pipe according to the present invention includes: a gas supply pipe 20 for supplying a gas; a main body 22, 23 connected to the gas supply pipe and having a gas flow passage 21 for flowing of a gas supplied from the gas supply pipe; and a blowoff block 25 arranged at the opposite side of the main body 22, 23 not having the gas supply pipe and having a blowoff opening 27 exposed outward for blowing off the gas outside. The blowoff block 25 is held so as to be sandwiched by the main body 22, 23 and can be detached and attached from/to the main body 22, 23.

Abstract: A process for manufacturing a composite inorganic membrane, comprising depositing one or a mixture of organometallic compounds according to formula (1): M[allyl][cyclopentadienyl]  (1) in which: M is Pd, Nb, or Ni; on a surface of a porous supporter and then passing a reductive gas through the opposite side of said porous supporter to form a metal film at room temperature is discussed.

Abstract: The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.