Abstract: Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.

Abstract: A method of filling a gap on a substrate includes providing flows of silicon-containing processing gas oxidizing processing gas, and phosphorous-containing processing gas to a chamber housing the substrate and depositing a first portion of a P-doped silicon oxide film as a substantially conformal layer in the gap by causing a reaction among the processing gases and varying over time a ratio of the gases. The temperature of the substrate is maintained below about 500° C. throughout deposition of the conformal layer. The method also includes depositing a second portion of the P-doped silicon oxide film as a bulk layer by maintaining the ratio of the gases substantially constant throughout deposition of the bulk layer. The temperature of the substrate is maintained below about 500° C. throughout deposition of the bulk layer.

Abstract: A brake disk including carbon steel, stainless steel or a ceramic composite material and coated with a coating material that is wear and corrosion resistant and when applied properly allows for the coated surface to have a variety of “textured” appearances. For example; the coated surface can be made to look like woven carbon fiber. The aesthetically pleasing, wear and corrosion resistant coating overlays wear surfaces and portions of the brake disk that will be, in many cases, visible when the brake disk is installed on the vehicle. The coating includes a first layer of a metal, such as a pure titanium metal, and a second layer that can include a Nitride, Boride, Carbide or Oxide of the metal used in the first layer. The coating can be applied using a physical vapor deposition source such as a cathodic arc source with a controlled gas atmosphere.

Abstract: The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor deposition following desublimation of pyrolysis products of polymeric precursors in inert or active atmosphere. PA-CVD allows one or multi-layers compositions, microstructures and thicknesses to be deposited on a wide variety of substrates. The deposited thin film from desublimation is an n-type semiconductor with a low donor concentration in the range of 1014-1017 cm?3. Many devices can be fabricated by the PA-CVD method of the invention such as; solar cells; light-emitting diodes; transistors; photothyristors, as well as integrated monolithic devices on a single chip. Using this novel technique, high deposition rates can be obtained from chemically synchronized Si—C bonds redistribution in organo-polysilanes in the temperature range of about 200-450° C.

Abstract: A method and apparatus for depositing silicon boron nitride films is provided. The apparatus comprises a chamber, a gas mixing block connected to the chamber, and separate boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor gas line systems that are connected to the gas mixing block. Methods of depositing a silicon boron nitride film in the apparatus are provided. In another aspect, a method of depositing a silicon boron nitride film includes reacting a boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor in a chamber, wherein a ratio of the flow rate of the nitrogen-containing precursor into the chamber to the flow rate of the boron-containing precursor is greater than or equal to about 10.

Abstract: The present invention relates to a ceramic material containing yttrium silicate which further contains zirconium, and to the use of said ceramic material as a heat and/or corrosion protection layer, and to a process for preparing coatings with said ceramic material.

Abstract: A superconducting magnesium diboride (MgB2) thin film having c-axial orientation and a method and apparatus for fabricating the same are provided. The fabrication method includes forming a boron thin film on a substrate and thermally processing the substrate on which the boron thin film is formed along with a magnesium source and cooling the resulting structure. The superconducting magnesium diboride thin film can be used in a variety of electronic devices employing superconducting thin films, such as precision medical diagnosis equipment using superconducting quantum interface devices (SQUIDs) capable of sensing weak magnetic fields, microwave communications equipment used for satellite communications, and Josephson devices. Computer systems with 100 times greater computing speed can be implemented with the superconducting magnesium diboride thin film.

Abstract: A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.

Abstract: Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.

Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Abstract: An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 1010 ohm/square. The coating is preferably higher transparent.

Abstract: Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy).

Abstract: A family of extremely fine-grained alloys are used to make coatings or free-standing bodies having desirable properties for use as a heat-resistant and wear-resistant material. In an illustrative embodiment, the alloys are comprised of a multiplicity of alternate, microcrystalline or nanocrystalline films of tungsten metal and tungsten compound. The tungsten compound film may be comprised of a tungsten carbide or a tungsten boride. The tungsten films are the primary films. Their desirable characteristics, in addition to their very fine crystalline habit, per se, are the high strength, high hardness, high resilience, and high fracture energy which these fine crystallites foster. They may be manufactured by a chemical vapor deposition process in which reactive gas flows are rapidly switched to produce alternate films with abrupt hetero-junctions and thereby to produce the useful micro-crystalline habit. The unique synthesis method allows effective control of critical flaw size.

Abstract: The present invention generally relates to a method for depositing a metallic nitride series thin film, typically a TiN-series thin film. The TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, O and N to have a higher barrier characteristic than those of conventional TiN thin films, so that TiN-series thin film can suitably used as a barrier layer. In addition, a TiN-series thin film according to the present invention is formed by a CVD, and contains Ti, N and P to have a lower resistance than those of conventional TiN films, so that TiN-series thin film can suitably used as a barrier layer or a capacitor top electrode. Moreover, if a TiN-series thin film containing Ti, O, N and P is formed by a CVD, the TiN-series thin film can have both of a high barrier characteristic and a low resistance characteristic.

Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.

Abstract: A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH4), disilane (Si2H6), dichlorosilane (SiCl2H2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.

Abstract: Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properties on substrates typically used in the semiconductor industry by physically generating magnesium vapor in a deposition chamber and introducing a boron containing precursor into the chamber which combines with the magnesium vapor to form a thin boride film on the substrate.

Abstract: In one aspect, the invention includes a method of forming an insulating material comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising a Si, F and ozone within the reaction chamber; and c) depositing an insulating material comprising fluorine, silicon and oxygen onto the substrate from the reactants. In another aspect, the invention includes a method of forming a boron-doped silicon oxide having Si-F bonds, comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising Triethoxy fluorosilane, a boron-containing precursor, and ozone within the reaction chamber; and c) depositing a boron-doped silicon oxide having Si—F bonds onto the substrate from the reactants.

Abstract: A method and system are provided for delivering a source gas to a processing chamber. A source gas delivery method includes providing a precursor chamber configured to hold precursor vapor, providing a saturated precursor vapor at a selected pressure within the precursor chamber, and flowing or diffusing saturated precursor vapor from the precursor chamber to the processing chamber until a selected pressure is provided in the processing chamber. A source gas delivery system includes a precursor chamber configured to hold precursor vapor, a heat source for heating a precursor liquid to provide saturated precursor vapor at a selected pressure within the precursor chamber, and a vapor pathway allowing saturated precursor vapor to enter a processing chamber until a selected pressure is provided in the processing chamber. Advantageously, the present invention allows for improved precursor vapor delivery and enhanced control over thin film deposition with less waste of precursor material.

Abstract: This invention provides a composite device whereby surface reflection and interference colors can be inhibited, photocatalytic decomposition performance may be improved and hydrophilicity-acquiring rate may be improved. A mixture film (14) is deposited on the surface of a base (12). The mixture film (14) is a colorless and transparent mixture film with a high light transmittance made of a mixture of boron oxide and photocatalytic titanium oxide.

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a boron nitride/yttria composite containing surface and process for manufacture thereof.

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a boron nitride/yttria composite containing surface and process for manufacture thereof.

Abstract: A method is disclosed for depositing an optical quality silica film on a wafer by PECVD. The flows rates for a raw material gas, an oxidation gas, a carrier gas, and a dopant gas are first set at predetermined levels. The total deposition pressure is set at a predetermined level. The deposited film is then subjected to a post deposition heat treatment at a temperature selected to optimize the mechanical properties without affecting the optical properties. Finally, the observed FTIR characteristics of the deposited film are monitored to produce a film having the desired optical and mechanical properties. This technique permits the production of high quality optical films with reduced stress.

Abstract: A substrate is set on a susceptor installed in a reactor and arranged horizontally. A cooling jacket is provided at a portion of the inner wall of the reactor that is opposite to the substrate. By flowing a given cooling medium through the cooling jacket with a pump connected to the jacket, at least the opposite portion of the inner wall is cooled down, which inhibits the reaction between raw material gases introduced into the reactor. As a result, in fabricating a III-V nitride film, the film growth rate is developed and the crystal quality is developed.

Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300 ° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250 ° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.

Abstract: A system for processing substrates comprises a plurality of process chambers. Each process chamber includes an inlet gas distribution member connected to an inlet gas line to distribute gas from the inlet gas line into the process chamber, a substrate support to support a substrate at a spacing distance from the inlet gas distribution member, and a gas outlet. The inlet gas distribution member has an inlet gas distribution member impedance to a gas flow through the inlet gas distribution member into the process chamber. The plurality of process chambers are substantially identical. A source gas delivery line is connected to the inlet gas lines of the plurality of process chambers to supply a gas flow to be divided into the inlet gas lines. A plurality of tunable upstream gas restrictors are each disposed in one of the inlet gas lines connected to the inlet gas distribution members of the process chambers and are configured to adjust a flow rate into the corresponding process chamber.

Abstract: The invention relates to a method and apparatus for the production of protective coatings on parts. A coating formed in accordance with the invention has a chemical composition and structure gradient across its thickness. The coating is obtained by heating of a composite ingot including a body and at least one insert disposed within the body. As the composite ingot is heated it sequentially evaporates to produce a vapor with a chemical composition varying over the evaporation time period. The composition of the body and composition and location of the insert within the body function to determine the chemical composition of the vapor at any time. Condensation and/or deposition of the vapor onto a substrate forms the inventive coating.

Abstract: A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave.

Abstract: A thermal processing method of the invention includes; a loading step of loading an object to be processed into a processing container, the object having a surface provided with a silicon film having a minutely irregular profile; and a doping step of introducing phosphorus atoms in the silicon film as impurities, by using PH3 gas as a doping gas while maintaining a temperature of 550 to 750° C.

Abstract: The present invention recognizes that the build-up of residue in a metal alloy injection valve used to inject a liquid phosphorous precursor compound is due to the nickel in the alloy affecting the liquid phosphorous precursor compound. The invention thus provides components manufactured of an alloy having a low nickel content, preferably less than 5% nickel, and more preferably less than 1%. In an additional aspect of the invention, the alloy is provided with a higher chromium content, preferably at least 15% chromium, more preferably 16-27%.

Abstract: The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen.

Abstract: A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.

Abstract: The present invention is directed to methods for applying a protective layer (42) to the cathode (40) of an electrolysis cell (10), where the cell also contains inert anodes (50) and the protective layer (42) can comprise a plurality of layers (70, 72, 74) with an inner layer (70) of TiB2 being preferred, and the protective layer (42) protects the cathode (40)from hot gases (64) used to pre-heat the cell (10).

Abstract: A low temperature, high growth rate plasma enhanced chemical vapor deposition process is demonstrated for ceramic coatings on metal, alloy and ceramic substrates. The deposition process is carried out at low temperatures (<350-degC.) to prevent the bulk substrate properties from being adversely affected. The substrates are treated with gas surface hardening processes before deposition. Bonding strength (adhesion) between the coating and the substrate is improved by combining surface heat treating processes with the coating processes. Hard ceramic-solid lubricant composite coatings are used for fuel injector components, hydraulic valve components, and other wear parts. Metal-releasing agents are used to improve deposition efficiency. Electron cyclotron resonance mechanism and electromagnetic radiation are used to improve bonding strength, growth rate, coating uniformity, film smoothness and other film qualities.

Abstract: A method for producing a nano-porous coating onto a substrate, including the steps of: (a) operating a twin-wire arc nozzle to heat and at least partially vaporize two wires of a metal for providing a stream of nanometer-sized vapor clusters of the metal into a chamber in which the substrate is disposed; (b) injecting a stream of reactive gas into the chamber to impinge upon the stream of metal vapor clusters and exothermically react therewith to produce substantially nanometer-sized metal compound or ceramic clusters; (c) operating heat treatment devices to heat treat the metal compound or ceramic clusters so that a non-zero proportion of the clusters is in a solid state when impinging upon the substrate; and (d) directing the metal compound or ceramic clusters to impinge and deposit onto the substrate for forming the nano-porous coating.

Abstract: In a method for producing a titanium monophosphide layer, a carrier is first placed in a reactor. Thereafter, a TiN layer is deposited on the carrier by supplying TiCl4 ad NH3 into the reactor. The TiN layer is annealed immediately after deposition of the TiN layer while PH3 is supplied to the reactor, in order to form the titanium monophosphide layer on the TiN layer.

Abstract: A process for forming a thermally stable low-dielectric constant material is provided. A gas mixture is prepared to form a fluorinated amorphous carbon (a-C:F) material. The gas mixture is mixed with a boron-containing gas.

Abstract: A method and apparatus for depositing a boron insitu doped amorphous or polycrystalline silicon film on a substrate. According to the present invention, a substrate is placed into deposition chamber. A reactant gas mix comprising a silicon source gas, boron source gas, and a carrier gas is fed into the deposition chamber. The carrier gas is fed into the deposition chamber at a rate so that the residence of the carrier gas in the deposition chamber is less then or equal to 3 seconds or alternatively has a velocity of at least 4 inches/sec. In another embodiment of forming a boron doped amorphous for polycrystalline silicon film a substrate is placed into a deposition chamber. The substrate is heated to a deposition temperature between 580-750° C. and the chamber pressure reduced to a deposition pressure of less than or equal to 50 torr. A silicon source gas is fed into the deposition at a rate to provide a silicon source gas partial pressure of between 1-5 torr.

Abstract: A method is disclosed for treating the surface of tools made of tool steel, wherein primary carbides are embedded in the tool steel matrix. The thickness of the primary carbides disposed near the surface can be reduced by forming a surface which has point-wise recess; alternatively, the primary carbides can be completely removed. A hard material layer is deposited on this surface. The invention also describes tools made of tool steel, wherein primary carbides are embedded in the tool steel matrix. The primary carbides are significantly recessed, and a hard material layer is deposited thereon.

Abstract: A phosphor is prepared by depositing a compound semiconductor of Groups III-V in the form of fine particles or a thin film on a surface of a carrier particle by hetero-epitaxial growth. Thus, the phosphor increased in quality is obtained with satisfactory reproducibility.

Abstract: Silicon carbide fibers having an excellent mechanical strength and a superior heat resistance can be produced by the process in which activated carbon fibers having a thickness of 1 to 30 &mgr;m and a BET specific surface area of 700 to 1500 m2/g are reacted with a silicon and/or silicon oxide gas at 1200 to 1500° C. under a reduced pressure or in an inert gas atmosphere; and the resultant SiC fibers are heat treated in the presence of a boron-containing substance and optionally a carbon-containing substance at 1700 to 2300° C. in an inert gas atmosphere, wherein the fibers may be in the form of a shaped article, for example, a sheet or honeycomb structure.

Abstract: The invention relates to a method for manufacturing a fiber-reinforced bioactive ceramic implant, wherein a base form is made from fibrous material and interspaces between the different fibers are filled using chemical vapor phase infiltration. The fibrous material is coated with a composition which optimizes the bonding with the infiltrant. Preferably, a calcium-phosphate compound is brought between the fibers, which are preferably of the continuous-fiber type.

Abstract: A method of forming titanium boronitride coatings using ion beam assisted deposition. The method involves exposing the substrate to a vacuum, depositing titanium onto the substrate, substantially simultaneously exposing the substrate to a source comprising boron and nitrogen, and substantially simultaneously bombarding the substrate with an energetic beam of ions under conditions effective to form a quantity of titanium-boron bonds and a quantity of titanium-nitrogen bonds effective to produce a titanium boronitride coating having a hardness of at least about 5000 kg/mm2.

Abstract: There is disclosed a pyrolytic boron nitride container for accommodating a material serving as a source of molecular beams for molecular beam epitaxy, wherein the transmissivity of the pyrolytic boron nitride container with respect to light having a wave number of 2600 cm−1 to 6500 cm−1 has a profile such that the transmissivity changes in the height direction of the container. The pyrolytic boron nitride container can be manufactured through a simple process and at low cost. The pyrolytic boron nitride container can prevent material melt from rising along the inner wall surface and prevent splashed material melt from adhering to the upper portion of the container. Further, the pyrolytic boron nitride container can stabilize molecular beam epitaxial growth and improve the quality of epitaxial film.