Silicon Containing Coating Patents (Class 427/255.393)
  • Patent number: 9564312
    Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: February 7, 2017
    Assignee: Lam Research Corporation
    Inventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
  • Publication number: 20150140216
    Abstract: A CVD process for depositing a silica coating is provided. The process includes providing a glass substrate. The process also includes forming a gaseous mixture including a silane compound, oxygen, a fluorine-containing compound, and a radical scavenger such as ethylene or propylene. The gaseous mixture is directed toward and along the glass substrate and is reacted over the glass substrate to form the silica coating thereon.
    Type: Application
    Filed: February 18, 2013
    Publication date: May 21, 2015
    Inventors: Douglas Nelson, Michael Martin Radtke, Steven Edward Phillips
  • Patent number: 9011994
    Abstract: A gas-barrier multilayer film including: a base member; and at least one thin film layer formed on at least one surface of the base member, wherein at least one layer of the thin film layer(s) satisfies at least one of requirements (A) and (B).
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: April 21, 2015
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Akira Hasegawa, Toshiya Kuroda, Masamitsu Ishitobi, Takashi Sanada, Toshihiko Tanaka
  • Patent number: 9005704
    Abstract: Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: April 14, 2015
    Assignee: Applied Materials, Inc.
    Inventors: David Thompson, Jeffrey W. Anthis, David Knapp, Benjamin Schmiege
  • Patent number: 8993058
    Abstract: Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: March 31, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey W. Anthis, Khaled Z. Ahmed
  • Publication number: 20150030761
    Abstract: To provide an apparatus and process capable of continuously forming a fluorinated organosilicon compound thin film having high durability while a substrate is transported.
    Type: Application
    Filed: August 22, 2014
    Publication date: January 29, 2015
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Ryosuke KATO, Masao Miyamura, Tamotsu Morimoto
  • Patent number: 8932675
    Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: January 13, 2015
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Manchao Xiao, Arthur Kenneth Hochberg
  • Patent number: 8932674
    Abstract: Disclosed are precursors that are adapted to deposit SiCOH films with dielectric constant and Young's Modulus suitable for future generation dielectric films.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: January 13, 2015
    Assignee: American Air Liquide, Inc.
    Inventors: Christian Dussarrat, François Doniat, Curtis Anderson, James J. F. McAndrew
  • Publication number: 20140370300
    Abstract: A coated article and a chemical vapor deposition process are disclosed. The coated article includes a functionalized layer applied to the coated article by chemical vapor deposition. The functionalized layer is a layer selected from the group consisting of an oxidized-then-functionalized layer, an organofluoro treated layer, a fluorosilane treated layer, a trimethylsilane treated surface, an organofluorotrialkoxysilanes treated layer, an organofluorosilylhydrides-treated layer, an organofluoro silyl treated layer, a tridecafluoro 1,1,2,2-tetrahydrooctylsilane treated layer, an organofluoro alcohol treated layer, a pentafluoropropanol treated layer, an allylheptafluoroisopropyl ether treated layer, a (perfluorobutyl) ethylene treated layer, a (perfluorooctyl) ethylene treated layer, and combinations thereof. The process includes applying the functionalized layer.
    Type: Application
    Filed: August 28, 2014
    Publication date: December 18, 2014
    Inventor: David A. SMITH
  • Patent number: 8889566
    Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: November 18, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Amit Chatterjee, Abhijit Basu Mallick, Nitin K. Ingle, Brian Underwood, Kiran V. Thadani, Xiaolin Chen, Abhishek Dube, Jingmei Liang
  • Publication number: 20140302239
    Abstract: The present invention provides a method of producing polycrystalline silicon in which silicon is precipitated on a silicon core wire to obtain a polycrystalline silicon rod. In an initial stage (former step) of a precipitation reaction, a reaction rate is not increased by supplying a large amount of source gas to a reactor but the reaction rate is increased by increasing a concentration of the source gas to be supplied, and in a latter step after the former step, the probability of occurrence of popcorn is reduced using an effect of high-speed forced convection caused by blowing the source gas into the reactor at high speed. Thus, a high-purity polycrystalline silicon rod with little popcorn can be produced without reducing production efficiency even in a reaction system with high pressure, high load, and high speed.
    Type: Application
    Filed: November 29, 2012
    Publication date: October 9, 2014
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yasushi Kurosawa, Shigeyoshi Netsu, Naruhiro Hoshino, Tetsuro Okada
  • Patent number: 8821986
    Abstract: Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: September 2, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Timothy W. Weidman, Todd Schroeder, David Thompson, Jeffrey W. Anthis
  • Patent number: 8815751
    Abstract: There is provided a method of manufacturing a semiconductor device, including: forming a film containing a specific element, nitrogen, and carbon on a substrate, by alternately performing the following steps a specific number of times: a step of supplying a source gas containing the specific element and a halogen element, to the substrate; and a step of supplying a reactive gas composed of three elements of carbon, nitrogen, and hydrogen and having more number of a carbon atom than the number of a nitrogen atom in a composition formula thereof, to the substrate.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: August 26, 2014
    Assignees: Hitachi Kokusai Electric Inc., L'Air Liquide-Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventors: Yoshiro Hirose, Atsushi Sano, Kazutaka Yanagita, Katsuko Higashino
  • Patent number: 8709541
    Abstract: A method for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air includes: hydrophobizing a surface of the processing chamber by introducing a hydrophobic gas into the processing chamber without the object to be processed accommodated in the processing chamber; and forming the thin film by introducing the organic metal raw material gas into the processing chamber with the object to be processed accommodated in the processing chamber.
    Type: Grant
    Filed: July 21, 2010
    Date of Patent: April 29, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Kenji Matsumoto, Hidenori Miyoshi
  • Patent number: 8703245
    Abstract: A coated metal substrate has at least one layer of titanium based hard material alloyed with at least one alloying element selected from the list of chromium, vanadium and silicon. The total quantity of alloying elements is between 1% and 50% of the metal content, the layer having a general formula of: (Ti100-a-b-cCraVbSic)CxNyOz.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: April 22, 2014
    Assignees: Iscar, Ltd., Ionbond AG
    Inventors: Albir Layyous, Yehezkeal Landau, Hristo Strakov, Renato Bonetti
  • Patent number: 8673396
    Abstract: A method of continuously forming a thin film includes the step of: moving a glass substrate with a thin strip shape having a constant db/2(d+b), where d is a thickness thereof and b is a width thereof in a cross section thereof, within a range from 0.015 to 0.15 through a film depositing region in which a reaction gas is supplied and a temperature is controlled to be high so that the glass substrate is rapidly heated; and moving continuously the glass substrate, immediately after the film depositing region, to pass through a cooling region in which a temperature is lower than that of the film depositing region, so that the glass substrate is rapidly cooled and the thin film formed of a component of the reaction gas is formed on the glass substrate.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: March 18, 2014
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Toshihiro Nakamura, Sadayuki Toda, Hisashi Koaizawa
  • Publication number: 20130344248
    Abstract: A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film.
    Type: Application
    Filed: June 22, 2012
    Publication date: December 26, 2013
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Robert D. Clark
  • Patent number: 8563095
    Abstract: A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: October 22, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Xinhai Han, Ryan Yamase, Ji Ae Park, Shamik Patel, Thomas Nowak, Zhengjiang “David” Cui, Mehul Naik, Heung Lak Park, Ran Ding, Bok Hoen Kim
  • Patent number: 8551580
    Abstract: A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: October 8, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventors: Makoto Urushihara, Kazuki Mizushima
  • Patent number: 8545938
    Abstract: A method of fabricating a ceramic component includes using vapor infiltration to deposit a ceramic coating within pores of a porous structure to form a preform body with residual interconnected porosity. Transfer molding is then used to deposit a heated, liquid glass or glass/ceramic material into the residual interconnected porosity. The liquid ceramic or ceramic/glass material is then solidified to form a ceramic component.
    Type: Grant
    Filed: October 3, 2011
    Date of Patent: October 1, 2013
    Assignee: United Technologies Corporation
    Inventors: Wayde R. Schmidt, David C. Jarmon
  • Patent number: 8535760
    Abstract: Chemical additives are used to increase the rate of deposition for the amorphous silicon film (?Si:H) and/or the microcrystalline silicon film (?CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.
    Type: Grant
    Filed: August 31, 2010
    Date of Patent: September 17, 2013
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Patrick Timothy Hurley, Robert Gordon Ridgeway, Katherine Anne Hutchison, John Giles Langan
  • Patent number: 8524319
    Abstract: Methods for producing crucibles for holding molten material that contain a reduced amount of gas pockets are disclosed. The methods may involve use of molten silica that may be outgassed prior to or during formation of the crucible. Crucibles produced from such methods and ingots and wafers that are produced from crucibles with a reduced amount of gas pockets are also disclosed.
    Type: Grant
    Filed: November 18, 2011
    Date of Patent: September 3, 2013
    Assignee: MEMC Electronic Materials, Inc.
    Inventors: Steven L. Kimbel, Harold W. Korb, Richard J. Phillips, Shailendra B. Rathod
  • Patent number: 8507051
    Abstract: A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.
    Type: Grant
    Filed: July 12, 2010
    Date of Patent: August 13, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventors: Makoto Urushihara, Kazuki Mizushima
  • Patent number: 8455293
    Abstract: A method for processing solar cells comprising: providing a vertical furnace to receive an array of mutually spaced circular semiconductor wafers for integrated circuit processing; composing a process chamber loading configuration for solar cell substrates, wherein a size of the solar cell substrates that extends along a first surface to be processed is smaller than a corresponding size of the circular semiconductor wafers, such that multiple arrays of mutually spaced solar cell substrates can be accommodated in the process chamber, loading the solar cell substrates into the process chamber; subjecting the solar cell substrates to a process in the process chamber.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: June 4, 2013
    Assignee: ASM International N.V.
    Inventors: Chris G. M. de Ridder, Klaas P. Boonstra, Adriaan Garssen, Frank Huussen
  • Patent number: 8377208
    Abstract: A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor configured to measure a pressure of a first area in the reaction pipe; a second pressure sensor configured to measure a pressure of a second area in the reaction pipe; and a particle outlet configured to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more.
    Type: Grant
    Filed: September 28, 2011
    Date of Patent: February 19, 2013
    Assignee: Siliconvalue LLC.
    Inventors: Yunsub Jung, Keunho Kim, Yeokyun Yoon, Ted Kim
  • Patent number: 8377511
    Abstract: Disclosed are CVD deposition of SiN and SiON films using pentakis(dimethylamino)disilane compounds along with a nitrogen containing gas and optionally an oxygen containing gas.
    Type: Grant
    Filed: April 3, 2006
    Date of Patent: February 19, 2013
    Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
    Inventor: Christian Dussarrat
  • Patent number: 8329252
    Abstract: A method is described for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, which comprises the steps of supplying original species SiH4 and CCl4 into a growth chamber, decomposing at elevated temperatures, producing decomposition product SiH2, SiH, Si, CCl3, or CCl2, producing interaction product HCl, CH3Cl, CH4, or SiH2Cl2, etching by one of the byproducts HCl to suppress Si nucleation, providing main species SiCl2 and CH4 at a cooled insert located on sides of a substrate holder and at a shower-head located on top of the substrate holder, in the growth chamber, with proper Si to C atom ratio and Si to Cl atom ratio, to suppress parasitic deposits, and depositing SiC on a substrate at a proper growth substrate temperature (1500 to 1800 centigrade range).
    Type: Grant
    Filed: July 31, 2011
    Date of Patent: December 11, 2012
    Assignee: Widetronix, Inc.
    Inventors: Yuri Makarov, Michael Spencer
  • Publication number: 20120213945
    Abstract: Embodiments relate to using radicals to at different stages of deposition processes. The radicals may be generated by applying voltage across electrodes in a reactor remote from a substrate. The radicals are injected onto the substrate at different stages of molecular layer deposition (MLD), atomic layer deposition (ALD), and chemical vapor deposition (CVD) to improve characteristics of the deposited layer, enable depositing of material otherwise not feasible and/or increase the rate of deposition. Gas used for generating the radicals may include inert gas and other gases. The radicals may disassociate precursors, activate the surface of a deposited layer or cause cross-linking between deposited molecules.
    Type: Application
    Filed: February 15, 2012
    Publication date: August 23, 2012
    Applicant: SYNOS TECHNOLOGY, INC.
    Inventor: Sang In LEE
  • Patent number: 8227358
    Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: July 24, 2012
    Assignee: Air Liquide Electronics U.S. LP
    Inventors: Ziyun Wang, Ashutosh Misra, Ravi Laxman
  • Patent number: 8222125
    Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.
    Type: Grant
    Filed: August 12, 2010
    Date of Patent: July 17, 2012
    Assignee: Ovshinsky Innovation, LLC
    Inventors: Stanford R. Ovshinsky, David Strand, Patrick Klersy, Boil Pashmakov
  • Patent number: 8133548
    Abstract: Provided a method for producing an oriented-porosity dielectric material on a substrate. The method includes depositing a vapor phase on a substrate of a composite layer comprising a material forming a matrix and a compound comprising chemical groups capable of being oriented under the effect of an electromagnetic field and/or photonic radiation; treating the composite layer to obtain the cross-linking of the material forming a matrix; and subjecting the substrate coated with the composite layer to an electromagnetic field and/or a photonic radiation.
    Type: Grant
    Filed: February 22, 2008
    Date of Patent: March 13, 2012
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Aziz Zenasni
  • Patent number: 8043660
    Abstract: A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: October 25, 2011
    Assignee: Mitsubishi Materials Corporation
    Inventors: Toshihide Endoh, Masayuki Tebakari, Toshiyuki Ishii, Masaaki Sakaguchi, Naoki Hatakeyama
  • Patent number: 7972977
    Abstract: Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
    Type: Grant
    Filed: October 5, 2007
    Date of Patent: July 5, 2011
    Assignee: ASM America, Inc.
    Inventors: Chang-Gong Wang, Eric Shero, Glen Wilk
  • Patent number: 7959733
    Abstract: A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: June 14, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Kazuhide Hasebe, Pao-Hwa Chou, Chaeho Kim
  • Patent number: 7959987
    Abstract: A method and apparatus for depositing a material layer to treat and condition a substrate, such as a fuel cell part, is described. The method includes depositing a hydrophilic material layer on a portion of the surface of the substrate in a process chamber from a mixture of precursors of the hydrophilic material layer. In addition, the method includes reducing a fluid contact angle of the substrate surface. The hydrophilic material layer comprises a wet etch rate of less than about 0.03 ?/min in the presence of about 10 ppm of hydrofluoric acid in water. The material layer can be used to condition various parts of a fuel cell useful in applications to generate electricity.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: June 14, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Tae Kyung Won, Robert Bachrach, John M. White, Wendell T. Blonigan
  • Patent number: 7897205
    Abstract: A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.
    Type: Grant
    Filed: April 7, 2006
    Date of Patent: March 1, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Takatoshi Kameshima, Kohei Kawamura, Yasuo Kobayashi
  • Patent number: 7892602
    Abstract: Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: February 22, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Hua Chung, Ling Chen, Barry L. Chin
  • Patent number: 7887875
    Abstract: A silicon rich anti-reflective coating (30) is formed on a layer (10) in which narrow linewidth features are to be formed. Prior to the formation of a photoresist layer (50), the anti-reflecting coating (30) is exposed to excited oxygen species to reduce photoresist poisoning.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: February 15, 2011
    Assignee: Texas Instruments Incorporated
    Inventors: James B. Friedmann, Shangting Detweiler, Brian M. Trentman
  • Publication number: 20100316800
    Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
    Type: Application
    Filed: August 20, 2010
    Publication date: December 16, 2010
    Inventors: Mei Chang, Lawrence C. Lei, Walter B. Glenn
  • Publication number: 20100247803
    Abstract: A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
    Type: Application
    Filed: March 23, 2010
    Publication date: September 30, 2010
    Applicants: TOKYO ELECTRON LIMITED, AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Eric M. LEE, Raymond Nicholas VRTIS, Mark Leonard O'NEILL, Patrick Timothy HURLEY, Jacques FAGUET, Takashi MATSUMOTO, Osayuki AKIYAMA
  • Publication number: 20100129994
    Abstract: A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.
    Type: Application
    Filed: February 27, 2008
    Publication date: May 27, 2010
    Inventors: Yousef Awad, Sebastien Allen, Michael Davies, Alexandre Gaumond, My Ali El Khakani, Riadh Smirani
  • Patent number: 7651726
    Abstract: A process of obtaining silicon nitride (Si3N4) surface coatings on ceramic pieces and components by impregnation of the surfaces of the ceramic pieces with silicon powder suspensions with a particle size preferably less than 200 ?m. The thickness of the coatings depends on the impregnation time and on the properties of the slip and the ceramic piece. The subsequent nitridation of the coating by thermal treatment at temperatures between 1300° C. and 1500° C. in N2 atmospheres leads to a continuous Si3N4 coating. The chemical stability and compatibility between Si3N4 and molten silicon enables its application in silicon metallurgy, in manufacturing crucibles for silicon fusion or for housing said molten silicon, in manufacturing pipes and chutes for its transport or in manufacturing different components for its subsequent purification.
    Type: Grant
    Filed: February 18, 2004
    Date of Patent: January 26, 2010
    Assignee: Universidade de Santiago de Compostela
    Inventors: Alejandro Souto Serantes, Francisco Guitián Rivera, Javier Bullón Camarasa
  • Patent number: 7629236
    Abstract: In a method of making a c-Si-based cell or a ?c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.
    Type: Grant
    Filed: August 26, 2004
    Date of Patent: December 8, 2009
    Assignee: Alliance For Sustainable Energy, LLC
    Inventors: Qi Wang, Tihu Wang, Matthew R. Page, Yanfa Yan
  • Patent number: 7625609
    Abstract: A method of forming a silicon nitride film which can form a silicon nitride film having a high film stress at a low process temperature is described herein. The method includes the steps of (a) supplying dichlorosilane into a reaction chamber containing a process object, thereby allowing chemical species originated from dichlorosilane as a precursor to be adsorbed on the process object; (b) hydrogenating chlorine contained in the chemical species, thereby removing the chlorine from the chemical species; and (c) supplying ammonia radicals into the reaction chamber, thereby nitriding the chemical species, from which the chlorine has been removed, by the ammonia radicals to, deposit resultant silicon nitride on the process object, wherein the steps (a), (b) and (c) are performed repeatedly for plural times in that order, thereby a silicon nitride film of a desired thickness is formed on a semiconductor wafer.
    Type: Grant
    Filed: March 27, 2006
    Date of Patent: December 1, 2009
    Assignee: Tokyo Electron Limited
    Inventor: Hiroyuki Matsuura
  • Patent number: 7604841
    Abstract: A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.
    Type: Grant
    Filed: March 31, 2004
    Date of Patent: October 20, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Raymond Joe, John Gumpher, Anthony Dip
  • Patent number: 7592273
    Abstract: A method of forming a semiconductor device comprises providing a portion of a semiconductor device structure, wherein the portion includes a region susceptible to hydrogen incorporation due to subsequent device processing. For example, the subsequent device processing can include one or more of (i) forming a layer over the region, wherein the layer includes hydrogen and (ii) using gases containing hydrogen in a plasma for the subsequent device processing, wherein the semiconductor device is subject to an undesirable device characteristic alteration by hydrogen incorporation into the region. The method further comprises forming a hydrogen barrier layer overlying the region, wherein the hydrogen barrier layer prevents substantial migration of hydrogen made available due to the subsequent device processing into the underlying region. The method further includes performing the subsequent device processing.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: September 22, 2009
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Stanley M. Filipiak, Zhi-Xiong Jiang, Mehul D. Shroff
  • Patent number: 7563727
    Abstract: A method for forming a high mechanical strength, low k, interlayer dielectric material with aluminosilicate precursors so that aluminum is facilely incorporated into the silicon matrix of the material, and an integrated circuit device comprising one or more high-strength, low-k interlayer dielectric layers so formed.
    Type: Grant
    Filed: November 8, 2004
    Date of Patent: July 21, 2009
    Assignee: Intel Corporation
    Inventor: Michael D. Goodner
  • Patent number: 7560581
    Abstract: Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.
    Type: Grant
    Filed: July 9, 2003
    Date of Patent: July 14, 2009
    Assignee: President and Fellows of Harvard College
    Inventors: Roy G. Gordon, Seigi Suh, Jill Becker
  • Publication number: 20090060820
    Abstract: The present invention includes a step of separating an effluent produced in a hydrogenation step of making tetrachlorosilane (STC) react with hydrogen into trichlorosilane (TCS), into a chlorosilane fraction containing a hydrocarbon and a TCS fraction, and a chlorination step of making the chlorosilane fraction containing the hydrocarbon react with chlorine to form STC and a substance containing a chlorinated hydrocarbon, wherein the effluent containing STC produced in the chlorination step is circulated to the hydrogenation step. In the chlorination step, the chlorosilane fraction containing a hydrocarbon (capable of containing hyper-hydrogenated chlorosilanes) having a boiling point close to TCS is hyper-chlorinated to be converted and acquire a higher boiling point, which facilitates the hyper-chlorinated chlorosilanes and the hyper-chlorinated hydrocarbons to be separated into high concentration, and increases the purity of TCS to be finally obtained.
    Type: Application
    Filed: September 3, 2008
    Publication date: March 5, 2009
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Takaaki Shimizu, Kyoji Oguro
  • Patent number: RE42887
    Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
    Type: Grant
    Filed: August 26, 2009
    Date of Patent: November 1, 2011
    Assignee: Case Western Reserve University
    Inventors: Mehran Mehregany, Christian A. Zorman, Xiao-An Fu, Jeremy Dunning