Abstract: A process is described for forming integral coatings on metal and/or non-metallic substrate surfaces by the method of physical and chemical deposition in a vacuum of metal and/or non-metallic materials. The process, improved so as to obtain a coating with quasi-plasticity behavior, includes an action for depositing material onto substrate surfaces in the shape of multiple separated-in-space deposition zones of predetermined form and dimensions, and, also, an action for continuous migration of these deposition zones over the substrate surface during the whole of the coating formation process, while preserving a uniform coating thickness. In a particular embodiment, a protective high-temperature resistant NiCrAlY system coating is formed on a protected component by physical vapor deposition, which deposition is done through a screen having a series of narrow and long slots.

Abstract: A multi-station processing chamber in which incompatible processes are performed includes multiple pedestals positioned in wells with annular gaps around the pedestals. Showerheads located above the pedestals flow reactive gases over substrates located on the pedestals. The reactive gases are drawn through the annular gaps by a pressure gradient. The reactive gases are then pumped out of the wells through an exhaust port. The narrow annular gap permits little recirculation of the reactive gases one they are drawn into the wells. Moreover, the showerheads are flush with ceiling of the chamber and the wells contain smooth contours to minimize dead space in the chamber thereby reducing residence time of the reactive gases. An indexing plate is used to lift the substrates off the pedestals and to accurately position the substrates at the next processing station.

Abstract: In a process for surface-treating a plurality of works, the surfaces of the works are treated in a treating chamber, while being rotated about their axes, or about a rotational axis, or about their axes and about the rotational axis. The works are supported in a support member which may be comprised of an upper cage and a lower cage including a large number of compartments, so that the cages are openable and closable in a lengthwise direction. The support member may be comprised of plate-like elements openably and closably foldable in a lengthwise direction, so that a plurality of narrow sections each having a length corresponding to an inside diameter of a work are defined in opened states of the plate-like elements. The works may be supported in a holder which is formed by coiling a wire at distances in such a manner that it is formed as a spring-like tubular structure, so that the works can be accommodated in the tubular structure.

Abstract: A process for surface-treating a plurality of works which includes the step of surface-treating the works in a treating chamber, while rotating the works about their axes in spaced apart states, wherein the surface treatment is a vapor deposition on a sintered article and the support member includes plate-like elements openably and closably foldable in a lengthwise direction, the plate-like elements defining a plurality of narrow sections each having a length in opened states corresponding to an inside diameter of a work. The support member may also include an upper cage and a lower cage which are openable and closable in a lengthwise direction.

Abstract: An apparatus and method technique for producing plane-parallel flakes is disclosed. In a preferred embodiment, the present invention is realized through a multi-chamber apparatus for producing plane-parallel flakes from layers vapor deposited in vacuum on an endlessly circulating substrate. The present invention includes the sequential steps of: vapor deposition of a separating agent layer in high vacuum on the endlessly circulating substrate; vapor deposition of one or more layers of metal, oxides, fluorides, and nitrides in high vacuum on the separating agent layer; and stripping the vapor deposited layers from the endlessly circulating substrate under low vacuum. The vapor deposited layers are subsequently present in a separate vacuum stage separated from the vapor deposition chamber by dynamic locks as a suspension of fine flakes in a mixture of solvent. and separating agent. The suspension may continuously or intermittently be transferred out of the separate vacuum stage for further processing.

Abstract: When a thin film is formed on a flexible and filmy substrate by a vapor phase method, the substrate is prevented from warping to be caused by the internal stress remaining in the thin film. When the thin film is formed by the vapor phase method, the substrate is previously curved so that the stress acts in the direction canceling the internal stress remaining in the thin film to be formed prior to the filming. Accordingly, the stress of the curved substrate cancels out the stress remaining in the thin film formed on the substrate. The substrate having a thin film formed thereon is not warped, the stress in the interface between the thin film formed and the substrate is removed, and the thin film has no cracks to be caused by the stress.

Abstract: A substrate cassette contains two physically spaced and parallel reels. A relatively long web of flexible substrate material is wound about one reel and the exposed end of the web is connected to the other reel, to thus expose a relatively short length of the substrate material at a deposition-plane that lies between the two reels. A first idler roller is associated with the first reel, a second idler roller is associated with the second reel, and the web is guided by the two idler rollers as the web moves between the two reels. The two idler rollers are mounted at fixed positions in order to accurately establish a fixed-position deposition-plane. The substrate cassette is placed within one or more vacuum deposition chambers, the web is advanced between the two reels, and one or more semiconductor layers are deposited on substantially the entire length of the web. A protective layer is provided as part of the web in order to protect the semiconductor layer(s) when the web is wound unto a take-up reel.

Abstract: A method and apparatus for depositing spatially substantially uniform layers of material onto a plurality of substrates positioned upon a rotatable tool within a vacuum chamber. The chamber is generally of the type that includes a sealable volume bounded by six orthogonally-arranged chamber walls. Apparatus is provided within the chamber for generating a flux of the coating material of known spatial character. A mask of predetermined shape is engaged to apparatus, including a linkage and a linear translation stage driven by a programmable stepper motor, for controllably advancing it during deposition with respect to the mounted substrate.

Abstract: A thin film microstructure is formed from a substrate having a film of vapor deposited material extending in distinct helical columns from the substrate. The distinct helical columns may terminate distally from the substrate in a region of denser material forming a cap for the helical columns. The cap and substrate may be each connected, respectively, to first and second electrodes, and may operate in conjunction with an acoustic wave sensor.

Abstract: In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert gas is exhausted through the annular channel formed between the inner tube and the outer tube at a bottom portion of the vertical reaction-tube; and, a wafer is heat treated in the vertical reaction-tube by means of a heating furnace. In order to decrease the number and size of the particles, the wafer is displaced upward and then positioned at a level substantially the same as or above the top end of the inner tube, and the reaction gas is introduced into the vertical reaction-tube at or above the position of the wafer. Furthermore, the inert gas is caused to flow from a bottom portion of the inner tube toward the wafer positioned as above. As a result, inflow of the reaction gas into the inner tube is impeded, and the generation of particles there can be lessened.

Abstract: The invention pertains to porous diaphragm-controlled physical and chemical vapor conveyance and separation using condenser and diaphragm technology with a transdiaphragm selectivity Sk=1 or practically 1 and with a flow rate driven by the pump speed at the input of the pump station in the vacuum chamber of vapor separation level and the resulting, i.e., forced convection. The expanded diaphragm technique for suction-flow global vapor conveyance and separation is also used for flows driven locally by the vapor pressure. Novel diaphragm functions and novel process configurations and operational levels are described, the motive force for the massive conveyance between vapor source and separation and resulting productivity being set and limited by a gas/vapor produced by an external pump system, wherein the total gas-suction flow can locally assume very high flow speeds, m especially before separation, and thus permit new manipulations for product design and product quality.

Abstract: A method and apparatus for producing a coating or a near net shaped monolithic ceramic part by chemical vapor deposition, where the resultant coatings or parts consume less deposit material and require less machining. Mandrel substrates are closely designed for producing a specific, near net shaped final part, including negative relief features. Several of the mandrel substrates are mounted through centers in a spaced relationship on one or more rotable shafts as tooling for a chemical vapor deposition furnace. The tooling is installed in a chemical vapor deposition furnace so that the shafts are oriented perpendicular and the substrate planar surfaces are parallel to the flow pattern of reactant gases through the furnace. The shafts are rotated during the deposition process so that the mandrel substrates each receive a uniformly distributed ceramic deposit in the near net shape of the final part.

Abstract: A method and apparatus for improved metal oxide chemical vapor deposition on a substrate surface where the application boundary layer is reduced and where the uniformity of the application boundary layer is greatly enhanced in a reactor. Primary and secondary sonic or other disturbance sources are incorporated for introducing disturbance into the interior chamber of the reactor, or an oscillating or vibrating chuck is incorporated within the interior chamber, to influence the boundary layer thickness and uniformity.

Abstract: A method of oxidation treatment of the inner surface of a ferritic stainless steel pipe comprising feeding an oxidizing gas into steel pipe from one end thereof while moving the steel pipe in a pipe-length direction, and heating the pipe in a heating furnace in a non-oxidizing atmosphere at a specific temperature of T° C. which falls within the range of 700-1100° C. The method is capable of efficiently forming Cr oxide film having a uniform Cr content and film thickness over the entire length of the inner surface of the steel pipe used as a piping member or piping for supplying a high-purity fluid, such as high-purity gas or water used in a semiconductor manufacturing process.

Abstract: The plasma processing apparatus includes a substrate table 10 that extends from a wall of the vacuum chamber 1 toward the inside of the vacuum chamber 1. A rotary holder 8, to which the substrate 5 is mounted, is arranged in a concave portion 10a that is provided in the substrate table 10. The rotary holder 8 is rotatably supported with its periphery being sealed with a sealing member 10b. Blades 9 are provided inside the rotary holder 8. A supply port 11 and a drainage port 12, for supplying and draining a fluid such that a rotation force is exerted on the blades 9, are formed in the substrate table 10. Supplying a fluid through the supply port 11 cools the substrate 5 while causing it to rotate.

Abstract: A cold wall reactor having inner and outer walls defining an annular reactor cell. A susceptor is rotatably mounted in the cell, and received wafers to be treated by gases flowing axially through the cell. The outer wall of the reactor is normally cooled, but is heated by a suitable furnace to provide a hot wall reactor when cleaning of the cell is required.

Abstract: In a method of producing a semiconductor apparatus, when a thin film is formed on a semiconductor substrate in the CVD reactive chamber by the CVD method, a remaining region is provided where a gas for film formation remains to a proximity of a surface of the semiconductor substrate, and a CVD thin film is provided on the substrate by decomposing only the gas for film formation existing in the remaining region without supplying an additional gas from the outside of the remaining region to the remaining region. With the method, when the thin film is formed on the substrate by the CVD method, the thin film is efficiently deposited on the substrate in a reactive chamber by efficiently using a reactive gas for film formation introduced into a CVD reactive chamber, to thereby reduce cost of forming the thin film remarkably.

Abstract: This invention includes a method for heating a deposition material to form a vapor that may be deposited on a polymer film and thereby create a holographic film or similar material. Included within this method is a vaporizer that has an adjustable aperture. The vaporizer may have (i) a flexible wall that defines a cavity in which a deposition material is heated (ii) a first lip extending outward from a first side of the flexible wall and (iii) a second lip extending outward from a second side of the flexible wall. The aperture size can be adjusted to a desired cross-sectional opening by adjusting the distance of separation between the first lip and the second lip. By adjusting the size of the aperture, the flow rate of the vapor from the vaporizer can be adjusted to achieve a desired flow rate. Heat from a heat source in thermal communication with the vaporizer may be employed to heat the deposition material to form a vapor.

Abstract: A method has been provided to counteract the inherent tension in a deposited film. A wafer substrate is fixed to a wafer chuck having a curved surface. When the chuck surface is convex, a tensile stress is implanted in a deposited film. Upon release from the chuck, the deposited film develops a compressive stress. When the chuck surface is concave, a compressive stress is implanted in the deposited film. Upon release from the chuck, the deposited film develops a tensile stress. Loading a film with a compressive stress is helpful in making films having an inherently tensile stress become thermal stable. Stress loading is also used to improve adhesion between films, and to prevent warping of a film during annealing. A product-by-process using the above-described method is also provided.

Abstract: A solid freeform fabrication process and apparatus for making a three-dimensional object. The process includes the steps of (1) positioning a material deposition sub-system a selected distance from a target surface, (2) operating this sub-system to deposit materials onto the target surface by carrying out the sub-steps of (a) operating a multiple-channel fluid phase delivery device of the deposition sub-system for supplying multiple fluid compositions to a small region proximate the target surface and (b) operating a focused energy source to produce a phase change zone at this region, thereby inducing deposition of materials onto the target surface, and (3) during the material deposition process, moving the deposition sub-system and the target surface relative to one another in a plane defined by first and second directions and in a third direction orthogonal to this plane to form deposition materials into a three dimensional shape. These steps are preferably executed under the control of a computer system.

Abstract: Semi-conductors, such as silicon wafers, are processed in two or more different reactors, e.g. reactors for the epitaxial growth of silicon, plasma etching, and/or vacuum metal deposition. The system is kept under constant vacuum. Common vacuum equipment, and a common gas distribution system, and a common silicon wafer loading chamber, are provided. A single reactor is maintained active at one time, while the dormant reactors are preferably kept under vacuum, and a control unit controls gas valves to selectively connect or disconnect each reactor to or from a source of treatment gas.

Abstract: Process for the depositing, onto a substrate, of a coating essentially constituted of an electronic conductor compound, in which the said coating is formed by producing alternatively, on the one hand, in at least one depositing zone, one or several deposits of a determined thickness of an electronic conductor element on the substrate, and, on the other hand, in at least one reaction zone, one or several reactions of the element thus deposited with ions of a reactive gas which are implanted into the deposit of the above-mentioned element over approximately this entire thickness determined in a way as to form, preferably with the totality of this element, the said compound, the above-mentioned ions being submitted to a kinetic energy below 2000 V, while the aforesaid thickness of the deposit of the element is determined as a function of the kinetic energy applied in such a way as to allow the implantation of these ions over approximately this entire thickness.

Abstract: A method of vacuum depositing a layer or layers on a substrate includes controlling thickness distribution of the layer or layers over the substrate by a three-dimensional mask (64) located between the substrate 48 and a vapor source (56). In one example a circular mask (64R) is divided by radially-extending spaced-apart walls (90) dividing the mask into radially-extending apertures (98) for allowing passage of gaseous coating material through the mask from a source to the substrate. The mask and substrate are rotated with respect to the source. The vapor transmission of the apertures is directly related to the height and spacing of the walls. The height and/or angular-spacing of the walls is varied over the mask for spatially varying thickness of the layer or layers over the substrate.