Abstract: This invention relates to a fixture for use in a physical vapor deposition coating operation which comprises a support structure 14 comprising a circular base member 10, a circular top member 11 opposite the circular base member 10, and a plurality of structural members 12 joining said top member 11 to said base member 10; a plurality of panel members 13 aligned in a vertical direction around the outer periphery of said support structure 14 forming a cylinder structure; said panel members 13 including a plurality of apertures for holding workpieces 19 and 35 to which a coating is to be applied; and said apertures positioned on said panel members 13 so that said workpieces 19 and 35 are aligned in a staggered vertical direction. This invention also relates to a method for simultaneously coating a plurality of workpieces 19 and 35, such as gas turbine compressor blades and vanes, with erosion resistant coatings using the fixture of this invention.

Abstract: An apparatus deposits a coating on a part. The apparatus comprises a chamber and a sting assembly for carrying the part. The sting assembly is shiftable between: an inserted condition where the sting assembly holds the part within the chamber for coating; and a retracted condition where the sting assembly holds the part outside of the chamber. The apparatus comprises a source of the coating material positioned to communicate the coating material to the part in the inserted condition. The apparatus comprises a thermal hood comprising a first member and a second member. The second member is between the first member and the part when the part is in the inserted condition. The second member is carried by the sting assembly so as to retract with the sting assembly as the sting assembly is retracted from the inserted condition to the retracted condition.

Abstract: A method of forming a partial deposition layer and an apparatus of forming the partial deposition layer are provided. A substrate is provided over an evaporation plate. A shielding plate is placed between the evaporation plate and the substrate such that the shielding plate shields a first portion of the substrate and exposes a second portion of the substrate. An evaporation process is performed when the substrate is moving in a predetermined direction such that a evaporation source on the evaporation plate is deposited on the exposed second portion of the substrate but not deposited on the shielded first portion of the substrate.

Abstract: The present disclosure relates to roll-to-roll doping method of graphene film, and doped graphene film.

Abstract: A vapor deposition source for vaporizing a material has a body forming an interior chamber, at least one crucible in the interior chamber, and a divider that divides the interior chamber into a transport channel and a distribution channel. To deposit vapor on an underlying substrate, the deposition source also has a plurality of exit orifices formed in the body adjacent to the distribution channel. The divider has a set of divider apertures between the transport channel and the distribution channel. This divider aperture is positioned generally symmetrically within the interior chamber.

Abstract: Provided are atomic layer deposition apparatus and methods including a gas cushion plate comprising a plurality of openings configured to create a gas cushion adjacent the gas cushion plate so that a substrate can be moved through a processing chamber.

Abstract: Provided is a substrate processing apparatus, such as an atomic layer deposition (ALD) chamber, comprising a substrate support on a swinging support arm and, optionally, a plurality of exhaust ducts located adjacent to but a distance from the gas distribution plate. One or more of the substrate processing apparatus may be a component of an integrated cluster tool to process multiple substrates concurrently.

Abstract: Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones and through a third precursor zone interposed between the first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides spaced apart along the first and second precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between the first and second precursor zones and through the third precursor zone, it passes through a first series of flow-restricting passageways of a first isolation region interposed between the first and third precursor zones and a second series of flow-restricting passageways of a second isolation region interposed between the second and third precursor zones.

Abstract: Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides, such as rollers, spaced apart along the precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between precursor zones, it passes through a series of flow-restricting passageways of an isolation zone into which an inert gas is injected to inhibit migration of precursor gases out of the precursor zones. Also disclosed are systems and methods for utilizing more than two precursor chemicals and for recycling precursor gases exhausted from the precursor zones.

Abstract: An ALD coating system (100) includes a fixed gas manifold (710, 1300) disposed over a moving substrate with a coating surface of the substrate facing precursor orifice plate (930). A gas control system (1400) delivers gas or vapor precursors and inert gas into the fixed gas manifold which directs input gases onto a coating surface of the moving substrate. The gas control system includes a blower (1485) interfaced with the gas manifold which draws gas through the gas manifold to remove unused precursors, inert gas and reaction byproduct from the coating surface. The gas manifold is configured segregate precursor gases at the coating surface to prevent the mixing of dissimilar precursors. The gas manifold may also segregate unused precursor gases in the exhaust system so that the unused precursors can be recovered and reused.

Abstract: A thin film deposition apparatus and an organic light-emitting display device by using the same. The thin film deposition apparatus includes an electrostatic chuck, a plurality of chambers; at least one thin film deposition assembly; a carrier; a first power source plug; and a second power source plug. The electrostatic chuck includes a body having a supporting surface that contacts a substrate to support the substrate, wherein the substrate is a deposition target; an electrode embedded into the body and applying an electrostatic force to the supporting surface; and a plurality of power source holes formed to expose the electrode and formed at different locations on the body.

Abstract: Thin film processing systems and methods are provided having a moving deposition sensor capable of translation and/or rotation in a manner that exposes the sensor to thin film deposition environments in a flux region substantially the same as the deposition environments experienced by one or more moveable substrates during a selected deposition period. In one embodiment, a thin film monitoring and control system is provided wherein one or more moveable substrates and a moveable deposition sensor are moved along substantially coincident trajectories in a flux region of a thin film deposition system for a selected deposition period. Systems and methods of the present invention may include SC-cut quartz crystal microbalance sensors capable of excitation of at least two different resonant modes.

Abstract: A substrate processing method for use in a substrate processing apparatus having a stocker therein which stores a multiplicity of dummy substrates; a reaction chamber for producing semiconductor products; and a transferring unit for transferring into the reaction chamber a process substrate and the dummy substrate stored in the stocker in order to form a film on the process substrate, the method includes transferring one dummy substrate selected among the dummy substrates stored in the stocker to the reaction chamber without being out of the apparatus; and introducing a cleaning gas into the reaction chamber to clean said one dummy substrate within the reaction chamber.

Abstract: A process and apparatus which form a solar cell absorber on a surface of a workpiece as the workpiece and a carrier are advanced through a rapid thermal processing (RTP) chamber. In one embodiment, the surface of the workpiece includes a precursor layer and an absorber constituent is disposed on the carrier. Initially an absorber constituent vapor can be formed in the RTP chamber by advancing the carrier into the RTP chamber to vaporize the absorber constituent from the carrier. The workpiece with the precursor layer is then moved into the RTP chamber to react the absorber constituent vapor and the precursor layer to form an absorber layer on the workpiece.

Abstract: A film forming apparatus that produces a thin film by repeating cycles of sequentially supplying reaction gases including a loading table in a vacuum vessel having substrate mounting areas; reaction gas supplying units arranged in a peripheral direction with intervals to supply the reaction gases onto substrates; separating areas separating atmospheres of the processing areas; separation gas supplying units supplying separation gases to render a supply amount to outer peripheral side separation areas greater than a supply amount to center side separation areas; a ceiling face surrounding narrow areas together with the loading table to enable the separation gases flow from the separating areas to the processing areas along the center side separation areas and the outer peripheral side separation areas a vacuum ejecting mechanism; and a rotary mechanism rotating the loading table relative to the reaction gas supplying units and the separating areas.

Abstract: The present invention provides for a method of producing an integral multilayered porous membrane by simultaneously co-casting a plurality of polymer solutions onto a support to form a multilayered liquid sheet and immersing the sheet into a liquid coagulation bath to effect phase separation and form a porous membrane. The support can be a temporary support or form an integrated support for the membrane. The plurality of layers may be of the same polymer or different, same concentration or viscosity or different and may be subjected to the same processing conditions or different ones to form unique structures.

Abstract: An apparatus for forming a film having high uniformity in its film thickness distribution is provided. An evaporation source is used in which an evaporation cell, or a plurality of evaporation cells, having a longitudinal direction is formed, and by moving the evaporation source in a direction perpendicular to the longitudinal direction of the evaporation source, a thin film is deposited on a substrate. By making the evaporation source longer, the uniformity of the film thickness distribution in the longitudinal direction is increased. The evaporation source is moved, film formation is performed over the entire substrate, and therefore the uniformity of the film thickness distribution over the entire substrate can be increased.

Abstract: A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks for restraining wafers against upward movement away from the support surfaces. Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion and minor portions having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets.

Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor includes a reaction chamber having an interior, a gas inlet manifold communicating with the interior of the chamber, an exhaust system including an exhaust manifold having a passage and one or more ports, and one or more cleaning elements mounted within the chamber. The gas inlet manifold can admit process gasses to form a deposit on substrates held within the interior. The passage can communicate with the interior of the chamber through the one or more ports. The one or more cleaning elements are movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports.

Abstract: There is provided a substrate processing apparatus, including: a substrate holder that holds a plurality of substrates (wafers) in a state of being arranged in a lateral direction (approximately in a horizontal direction) approximately in a vertical posture; a processing tube that houses the substrate holder; a throat side sealing part (throat side mechanical flange part) that air-tightly closes an opening part of the processing tube; a rotation part that rotates the substrate holder in a peripheral direction of the substrates, with an arrangement direction (a direction in which the substrates are held) of the plurality of substrates as a rotation axis, wherein the substrate holder includes a fixing part (movable holding part) and a fixture holding part for fixing the substrates approximately in a vertical posture.

Abstract: Systems and methods for the gas treatment of one or more substrates include at least two gas injectors in a reaction chamber, one of which may be movable. The systems may also include a substrate support structure for holding one or more substrates disposed within the reaction chamber. The movable gas injector may be disposed between the substrate support structure and another gas injector. The gas injectors may be configured to discharge different process gasses therefrom. The substrate support structure may be rotatable around an axis of rotation.

Abstract: Wafer carriers and methods for moving wafers in a reactor. The wafer carrier may include a platen with a plurality of compartments and a plurality of wafer platforms. The platen is configured to rotate about a first axis. Each of the wafer platforms is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment. The platen and the wafer platforms rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms carried on the platen and carrying the wafers about a respective second axis of rotation and with a different angular velocity than the platen to create planetary motion therebetween.

Abstract: The system (1) for the continuous vacuum coating of a continuously suppliable material in web form (2) provided with feed means; at least one inlet chamber (4), wherein the transition between the inlet atmospheric pressure and the vacuum pressure of a coating chamber (5) incorporating at least one vacuum deposition module (6) for depositing metallic and/or dielectric components on the material in web form is carried out; at least one outlet chamber (7); and collecting means (8) which collect the coated material in web form. The system further comprises drive and support means (9), on which the material in web form is fixed for its transport and by one of its faces, which material follows a preferably straight path at least through the coating chamber.

Abstract: Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a downwardly sloping process tunnel, extending in a transport direction and bounded by at least two tunnel walls. Both walls are provided with a plurality of gas injection channels, whereby the gas injection channels in at least one of the walls, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a series of tunnel segments that—in use—comprise successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively. The downward slope of the process tunnel enables gravity to drive the floatingly supported substrates through the successive segments, causing the atomic layer deposition of a film onto the substrates.

Abstract: Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system includes a process chamber with a peripheral sidewall, partitions that divide a processing space inside the process chamber into at least first and second compartments, and a platter that supports substrates within the processing space. The platter rotates the substrates relative to the stationary peripheral sidewall and compartments. The first compartment receives a process material used to deposit a layer on each of the substrates. An injector, which injects the process material, communicates with the first compartment through the peripheral sidewall.

Abstract: A chamber includes at its upper section a gas inlet from which to introduce a deposition gas. The inner walls of the chamber are covered by a cylindrical liner, and the chamber houses a susceptor assembly on which to place a semiconductor substrate. The liner includes a barrel section inside which the susceptor assembly is placed; a head section that is located right below the gas inlet and smaller in horizontal cross-sectional area than the barrel section; and a stepped section that connects the barrel section and the head section. The susceptor assembly is formed by fixing a ring plate to a susceptor via support posts. The ring plate covers the periphery of the stepped section of the liner. By the deposition gas flowing in a downward direction from the gas inlet into the chamber, a crystalline film is formed on the substrate positioned on the susceptor assembly.

Abstract: A colored device casing includes a base, a color layer and a bonding layer. The base has at least one smooth region. The bonding layer is positioned between the base and the color layer and bonds the base and the color layer together. The color layer includes at least one metal layer. Portion of the color layer corresponding to and located over the smooth region has a value of L* in a range from about 81.59 to about 83.59, a value of a* in a range from about ?0.55 to about 0.45 and a value of b* in a range from about ?0.60 to about 0.40 according to the Commission Internationale del'Eclairage LAB system. A surface-treating method for fabricating the colored casing is also provided.

Abstract: A process and apparatus for continuously depositing a coating on a fibrous material. The process is a chemical vapor deposition process that includes causing multiple strands of a fibrous material to continuously travel through a coating zone within an enclosed chamber defined by a housing so that portions of the strands contact a reactant gas as the portions travel through the chamber, directly heating the portions of the strands without physically contacting the strands and without directly heating the housing, and depositing a coating material on the strands as a result of the reactant gas contacting the portions of the strands and decomposing to form a coating of the coating material. Heating of the strands can be achieved by capacitive coupling, inductive coupling, microwave radiation, and radiant heating.

Abstract: A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the transfer chamber wherein the pressure of the transfer chamber is controlled to be higher than that of the reaction chamber before and while the gate valve is opened; repeating the above steps and removing the substrate from the reaction chamber; and purging and evacuating the reaction chamber, and cleaning the reaction chamber with a cleaning gas.

Abstract: A method of radical-enhanced atomic layer deposition (REALD) involves alternating exposure of a substrate to a first precursor gas and to radicals, such as monatomic oxygen radicals (O•), generated from an oxygen-containing second precursor gas, while maintaining spatial or temporal separation of the radicals and the first precursor gas. Simplified reactor designs and process control are possible when the first and second precursor gases are nonreactive under normal processing conditions and can therefore be allowed to mix after the radicals recombine or otherwise abate. In some embodiments, the second precursor gas is an oxygen-containing compound, such as carbon dioxide (CO2) or nitrous oxide (N2O) for example, or a mixture of such oxygen-containing compounds, and does not contain significant amounts of normal oxygen (O2).

Abstract: The present invention provides a film forming apparatus and a film forming method realizing improvement in the degree of freedom in film formation while suppressing production cost. While conveying a base material by using a plurality of guide rolls, film formation is performed by atomic layer deposition by outputting precursor gases to the base material by a plurality of ALD heads. The ALD heads are disposed so as to individually face the guide rolls so that the precursor gases are locally output to the base material. The amount of the precursor gases used is reduced more than that in a related art, and the variety of kinds of the usable precursor gases is widened.

Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is soluble in an aqueous solution comprising at least 50 weight % water and has an acid content of less than 2.5 meq/g of polymer. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: There is disclosed an apparatus for forming a fluidized bed of circulating particles. In an embodiment, the apparatus includes a bottom portion having a sidewall, the sidewall defining a curvilinear profile, and the bottom portion configured to contain a bed of particles; and a gas inlet configured to produce a column of gas to carry entrained particles therein. There is disclosed a method of forming a fluidized bed of circulating particles. In an embodiment, the method includes positioning particles within a bottom portion having a sidewall, the sidewall defining a curvilinear profile; producing a column of gas directed upwardly through a gas inlet; carrying entrained particles in the column of gas to produce a fountain of particles over the fluidized bed of circulating particles and subside in the particle bed until being directed inwardly into the column of gas within the curvilinear profile.

Abstract: A fluid conveyance device for thin film material deposition includes a substrate transport mechanism that causes a substrate to travels in a direction. A fluid distribution manifold includes an output face. The output face includes a plurality of elongated slots. At least one of the elongated slots includes a portion that is non-perpendicular and non-parallel relative to the direction of substrate travel.

Abstract: A fluid conveyance system for thin film material deposition includes a fluid distribution manifold and a substrate transport mechanism. The fluid distribution manifold includes an output face that includes a plurality of elongated slots. The output face of the fluid distribution manifold is positioned opposite a first surface of the substrate such that the elongated slots face the first surface of the substrate and are positioned proximate to the first surface of the substrate. The substrate transport mechanism causes a substrate to travel in a direction and includes a flexible mechanism that contacts a second surface of the substrate in a region that is proximate to the output face of the fluid distribution manifold.

Abstract: An apparatus for atomic layer deposition of a material on a moving substrate comprises a conveying arrangement for moving a substrate along a predetermined planar or curved path of travel and a coating bar having at least one precursor delivery channel. The precursor delivery channel conducts a fluid containing a material to be deposited on a substrate toward the path of travel. When in use, a substrate movable along the path of travel defines a gap between the outlet end of the precursor delivery channel and the substrate. The gap defines an impedance Zg to a flow of fluid from the precursor delivery channel. A flow restrictor is disposed within the precursor delivery channel that presents a predetermined impedance Zfc to the flow therethrough. The restrictor is sized such that the impedance Zfc is at least five (5) times, and more preferably at least fifteen (15) times, the impedance Zg. The impedance Zfc has a friction factor f.

Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: A thermal barrier coating and deposition process for a component intended for use in a hostile thermal environment, such as the turbine, combustor and augmentor components of a gas turbine engine. The TBC has a first coating portion on at least a first surface portion of the component. The first coating portion is formed of a ceramic material to have at least an inner region, at least an outer region overlying the inner region, and a columnar microstructure whereby the inner and outer regions comprise columns of the ceramic material. The columns of the inner region are more closely spaced than the columns of the outer region so that the inner region of the first coating portion is denser than the outer region of the first coating portion, wherein the higher density of the inner region promotes the impact resistance of the first coating portion.

Abstract: A deposition apparatus 100 comprises: a heater 121 for heating a silicon wafer 101; an electrically-conductive busbar 123 for supporting the heater 121; and an electrode assembly 107 having a hollow rod electrode 108 with upper and lower openings for conducting electricity to the heater 121 and a connector 124, secured to the busbar 123, for connecting the busbars 123 to the rod electrode 108. Wafer heating by the heater 121 is conducted while a purge gas 117 is fed from the lower opening of the rod electrode 108 so that the purge gas 117 can flow through the upper opening of the rod electrode 108 and through a clearance 131 that is located at the joint surface between the busbar 123 and the connector 124 and communicates with the upper opening of the rod electrode 108.

Abstract: A method and system for modifying a drug delivery polymeric substrate for an implantable device, such as a stent, is disclosed.

Abstract: A method comprising introducing a workpiece support into a chamber of an apparatus. The workpiece support is for supporting thereon a plurality of workpieces. The apparatus comprising: the chamber having an interior space configured to be maintained at a pressure below atmospheric pressure; a vapor source for supplying the interior space of the chamber with a linearly extending stream of lubricant vapor; the workpiece support for supporting thereon a plurality of workpieces with surfaces facing the vapor source; and a conveyor for continuously moving the workpiece support transversely past the linearly extending stream of lubricant vapor from the vapor source. The method also comprising continuously moving the workpiece support with the plurality of workpieces supported thereon transversely past the linearly extending stream of lubricant vapor from the vapor source and depositing a uniform thickness film of the lubricant on at least one surface of each of the plurality of workpieces.

Abstract: An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIA may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process.

Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: A thin film deposition apparatus capable of forming a precise deposition pattern on a large substrate includes a deposition source; a first nozzle disposed at a side of the deposition source having a plurality of first slits; a second nozzle disposed opposite to the first nozzle having a plurality of second slits; and a second nozzle frame bound to the second nozzle so as to support the second nozzle. The second nozzle frame includes two first frame portions spaced apart from each other and disposed in a direction in which the plurality of second slits are arranged, and two second frame portions each connecting the two first frame portions to each other, wherein the second frame portions are curved in the direction in which the plurality of second slits are arranged, so as to form arches.

Abstract: A roll-to-roll CVD system includes at least two rollers that transport a web through a deposition chamber during CVD processing. The deposition chamber defines a passage for the web to pass through while being transported by the at least two rollers. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources is coupled to the gas input port of each of the plurality of process chambers.

Abstract: A vapor deposition apparatus includes: a vacuum tank; an exhaust section that performs vacuum exhaust in the vacuum tank; a vapor deposition source disposed in the vacuum tank to vaporize a deposition material; and a traveling path for allowing an elongated substrate on which the deposition material is deposited to travel along a concave path with respect to the vapor deposition source at least in a region opposing the vapor deposition source.

Abstract: A plurality of partial control zones (an LL zone, an LR zone, and an R zone) that can control a gas flow rate independently in a widthwise direction of a gas flow are configured on an upstream side of the gas inlet port 20B. A control device 66 is disposed to control a gas flow rate for respective partial control zones.

Abstract: A vapor deposition device using a lift-off process includes an evaporation source, a space frame mounted for rotation about a first axis that passes through the evaporation source, a central dome-shaped wafer holder mounted to the space frame wherein a centerpoint of the central dome-shaped wafer holder is aligned with the first axis, a orbital dome-shaped wafer holder mounted to the space frame in a position offset from the first axis and rotatable about a second axis that passes through a centerpoint of the orbital dome-shaped wafer holder and the evaporation source, and a plurality of wafer positions on the central dome-shaped wafer holder and the orbital dome-shaped wafer holder where each of the wafer positions are offset from the first axis and the second axis.

Abstract: The invention relates to a method and a device for the coating of running substrates (25) moving along a run direction through a treatment zone (6), in which the vapour of a coating material is generated in a chamber (5), this vapour passing through a treatment aperture towards the treatment zone (6) where the coating material condenses on the surface of the substrates (25). The vapour flow through the treatment aperture is controlled by adjusting the extent to which the treatment aperture is shut off by at least one shutter (13), between an open position, in which said vapour flows through the treatment aperture towards the treatment zone (6), and a closed position, in which the vapour is prevented from flowing towards the treatment zone (6) through the treatment aperture.

Abstract: This invention relates to a fixture for use in a physical vapor deposition coating operation which comprises a support structure 14 comprising a circular base member 10, a circular top member 11 opposite the circular base member 10, and a plurality of structural members 12 joining said top member 11 to said base member 10; a plurality of panel members 13 aligned in a vertical direction around the outer periphery of said support structure 14 forming a cylinder structure; said panel members 13 including a plurality of apertures for holding workpieces 19 and 35 to which a coating is to be applied; and said apertures positioned on said panel members 13 so that said workpieces 19 and 35 are aligned in a staggered vertical direction. This invention also relates to a method for simultaneously coating a plurality of workpieces 19 and 35, such as gas turbine compressor blades and vanes, with erosion resistant coatings using the fixture of this invention.