Silicon Present In Substrate, Plating, Or Implanted Layer Patents (Class 427/527)
  • Patent number: 9435038
    Abstract: An improved method of etching a metal substrate is described. After a mask layer is applied to the metal substrate, an ion implantation process is performed which implants ions, such as oxygen ions, into the exposed regions of the metal substrate. This implantation creates regions of metal oxide, which may be more susceptible to etching. Afterwards, the exposed regions of metal oxide are subjected to an etching process. This process may be through vaporization or may be a wet etch process. In some embodiments, the etchant is selected so that the metal oxide binds with the etchant to form a volatile compound, which stays in the vapor or gaseous state. This may reduce the unwanted deposition of the metal to other surfaces. These ion implantation and etching processes may be repeated a plurality of times to create a recessed feature of the desired depth.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: September 6, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Thomas Omstead, William Davis Lee, Tristan Ma
  • Patent number: 9320683
    Abstract: Monolithic ceramic bodies that have a mixed-oxide marginal region and a metallic surface, where the ceramic body includes an oxide of a first metal (I), while the mixed-oxide marginal region includes the oxide of the first metal (I) and the oxide of a further metal (II) having a high affinity for oxygen, and the metallic surface includes the further metal (II). The mixed oxide marginal region includes a continuous concentration gradient of the first metal (I), from 100% in the core to 0% in the transitional region to the metallic surface of the ceramic body, and a continuous concentration gradient of the further metal (II), starting from 0% in the core to 100% in the transitional region to the metallic surface of the ceramic body, where the oxygen concentration in the mixed-oxide marginal region remains constant, and the monolithic structure of the ceramic body has no phase boundaries.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: April 26, 2016
    Assignee: CeramOss GmbH
    Inventors: Sorin Lenz, Christian Mahringer, Günter Rübig, Alexander Schreiner
  • Patent number: 9287085
    Abstract: A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.
    Type: Grant
    Filed: May 12, 2014
    Date of Patent: March 15, 2016
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ernest E. Allen, Jon Ballou, Kevin M. Daniels, James P. Buonodono, Joseph P. Dzengeleski
  • Patent number: 9257273
    Abstract: A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: February 9, 2016
    Assignees: HITACHI HIGH-TECH SCIENCE CORPORATION, JAPAN SCIENCE AND TECHNOLOGY AGENCY, JSR CORPORATION
    Inventors: Yoshihiro Koyama, Anto Yasaka, Tatsuya Shimoda, Yasuo Matsuki, Ryo Kawajiri
  • Publication number: 20150147523
    Abstract: A hydrophobic surface comprises a surface texture and a coating disposed on the surface texture, wherein the coating comprises an amorphous diamond like carbon material doped with 10 to 35 atomic percent of Si, O, F, or a combination comprising at least one of the foregoing, or a low surface energy material selected from fluoropolymer, silicone, ceramic, fluoropolymer composite, or a combination comprising at least one of the foregoing; and wherein the surface texture comprises a micro texture, a micro-nano texture, or a combination of a micro texture and a micro-nano texture.
    Type: Application
    Filed: November 26, 2013
    Publication date: May 28, 2015
    Applicant: BAKER HUGHES INCORPORATED
    Inventors: Deepak Kumar, Zhiyue Xu
  • Publication number: 20150140229
    Abstract: A process of forward deposition of a material onto a target substrate is accomplished by passing a burst of ultrafast laser pulses of a laser beam through a carrier substrate that is transparent to a laser beam. The carrier substrate is coated with a material to be transferred on the bottom side thereof. Electrons on the back side of said transparent carrier coated with the material are excited by the first few sub-pulses of the laser beam which lifts the material from the carrier substrate and subsequent sub-pulse of the laser beam send the material into space at hypersonic speed by a shock wave that drives the material with forward momentum across a narrow gap between the carrier substrate and the target substrate, and onto the target substrate.
    Type: Application
    Filed: November 16, 2014
    Publication date: May 21, 2015
    Applicant: ROFIN-SINAR TECHNOLOGIES INC.
    Inventor: S. ABBAS HOSSEINI
  • Patent number: 9028923
    Abstract: The present invention relates to a ceramic coating and ion beam mixing apparatus for improving corrosion resistance, and a method of reforming an interface between a coating material and a base material. In samples fabricated using the coating and ion beam mixing apparatus, adhesiveness is improved, and the base material is reinforced, thereby improving resistance to thermal stress at high temperatures and high-temperature corrosion resistance of a material to be used in a sulfuric acid decomposition apparatus for producing hydrogen.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: May 12, 2015
    Assignee: Korea Atomic Energy Research Institute
    Inventors: Jaewon Park, Chang-Kue Park, Jonghwa Chang, Byungho Choi, Yongwan Kim
  • Patent number: 8980387
    Abstract: A method of coating a surface, preparing a doped metal-ion precursor solution for coating, and an article including a component coated by the described method are disclosed. The method of coating includes applying a fluoro-silane doped metal-ion precursor solution on the surface to form a coated surface. The metal-ion precursor solution includes greater than about 0.6 molar percent concentration of a metal-ion precursor in a solvent comprising an alcohol. The method of preparing the doped metal-ion precursor solution includes dissolving a metal-ion precursor in a solvent comprising an alcohol at a temperature greater than about 100° C. and refluxing at a temperature greater than about 150° C. such that the concentration of metal-ion precursor in the solution is greater than 0.6 molar percent of the solution, and adding a fluoro-silane to the metal-ion precursor solution.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: March 17, 2015
    Assignee: General Electric Company
    Inventors: Kevin Paul McEvoy, Ambarish Jayant Kulkarni, James Anthony Ruud
  • Publication number: 20150045205
    Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.
    Type: Application
    Filed: November 12, 2013
    Publication date: February 12, 2015
    Inventors: Guido Fridolin Verbeck, IV, Stephen Davila
  • Publication number: 20150044510
    Abstract: A method of protecting a magnetic information storage medium is described. The method includes fabricating a film over a surface of the magnetic information storage medium. The film includes an amorphous, uniform, homogeneous solid solution of carbon, hydrogen, silicon, and oxygen. A magnetic storage medium with such a protective film is described.
    Type: Application
    Filed: September 15, 2014
    Publication date: February 12, 2015
    Inventors: Robert W. Carpick, Kumar Sridharan
  • Patent number: 8906492
    Abstract: A formed article includes a gas barrier layer that is formed of a material including at least an oxygen atom and a silicon atom, a surface area of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on the total content of oxygen atoms, nitrogen atoms, and silicon atoms, and having a film density of 2.4 to 4.0 g/cm3. A method of producing a formed article includes implanting ions into a surface layer part of a polysilazane compound-containing layer of a formed body that includes the polysilazane compound-containing layer in its surface layer part. An electronic device member includes the formed article. An electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability, excellent folding resistance, and excellent transparency.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: December 9, 2014
    Assignee: LÌNTEC Corporation
    Inventors: Yuta Suzuki, Takeshi Kondo, Shinichi Hoshi
  • Patent number: 8846200
    Abstract: The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130° C., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a process for producing the same, an electronic device member that includes the gas barrier film, and an electronic device that includes the electronic device member.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: September 30, 2014
    Assignee: Lintec Corporation
    Inventors: Masaharu Ito, Takeshi Kondo, Yuta Suzuki
  • Patent number: 8795790
    Abstract: [Problem] An object is to provide a magnetic recording medium with improved HDI characteristics, such as impact resistance, and its manufacturing method. [Solution] A typical structure of a magnetic recording medium 100 according to the present invention includes, on a base, at least a magnetic recording layer 122, a protective layer 126, and a lubricating layer 128, wherein the magnetic recording layer 122 includes, in an in-plane direction, a magnetic recording part 136 configured of a magnetic material and a non-recording part 134 magnetically separating the magnetic recording part 136, and a surface corresponding to the non-recording part 134 protuberates more than a surface corresponding to the magnetic recording part 136.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: August 5, 2014
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventors: Yoshiaki Sonobe, Akira Shimada, Tsuyoshi Ozawa, Masanori Aniya
  • Publication number: 20140193591
    Abstract: A method aleviating blistering, cracking and chipping in topmost layers of a multilayer system exposed to reactive hydrogen, when producing a reflective optical element (50) having a maximum reflectivity at an operating wavelength of 5 nm to 20 nm. A multilayer system (51) composed of 30-60 stacks (53) is applied to a substrate (52). Each stack has a layer (54) of thickness dMLs composed of a high refractive index material and a layer (55) of thickness dMLa composed of a low refractive index material. The thickness ratio is dMLa/(dMLa+dMLs)=?ML. Two to five further stacks (56) are applied to the multilayer system. at least one further stack having a layer (54) of thickness ds composed of a high refractive index material and a layer (55) of thickness da composed of a low refractive index material, wherein the thickness ratio is da/(da+ds)=? and wherein ???ML.
    Type: Application
    Filed: December 20, 2013
    Publication date: July 10, 2014
    Applicant: CARL ZEISS SMT GmbH
    Inventors: Alexey KUZNETZOV, Michael GLEESON, Robbert W. E. VAN DE KRUIJS, Frederik BIJKERK
  • Patent number: 8771834
    Abstract: The present invention is a formed article sequentially comprising a base layer, a primer layer that includes a hydroxyl group-containing polymer, and a gas barrier layer, the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. According to the present invention, provided is a formed article, a method for producing the same, an electronic device member including the formed article, and an electronic device including the electronic device member, with an excellent gas barrier capability and excellent transparency.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: July 8, 2014
    Assignee: Lintec Corporation
    Inventors: Kazue Uemura, Takeshi Kondo, Yuta Suzuki
  • Patent number: 8771874
    Abstract: The negative electrode for a lithium secondary battery includes: a current collector 11 having a plurality of bumps 11a on a surface thereof; a first active material layer formed on the current collector 11; and a second active material layer 15 disposed on the first active material layer 12 and including a plurality of active material particles 14. Each of the plurality of active material particles 14 is located on a corresponding bump 11a of the current collector 11, and each of the first active material layer 12 and the plurality of active material particles 14 has a chemical composition represented as SiOx (0<x<1).
    Type: Grant
    Filed: March 13, 2008
    Date of Patent: July 8, 2014
    Assignee: Panasonic Corporation
    Inventors: Taisuke Yamamoto, Kazuya Iwamoto, Yasutaka Kogetsu
  • Publication number: 20140178596
    Abstract: A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate.
    Type: Application
    Filed: December 20, 2013
    Publication date: June 26, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank FOURNEL, Hubert MORICEAU, Marc ZUSSY
  • Patent number: 8741161
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer.
    Type: Grant
    Filed: March 23, 2012
    Date of Patent: June 3, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasuyuki Sonoda, Kyoichi Suguro, Masatoshi Yoshikawa, Koji Yamakawa, Katsuaki Natori, Daisuke Ikeno
  • Publication number: 20140147683
    Abstract: The present invention relates to a coated body comprising a substrate and a coating onto the substrate, the coating having a nanolaminated coating system having a nanolaminated coating structure of alternating A and B layers (AlxTil-x-yWy)N I (Til-z-uSizWu)N, the individual thickness of each nanolayer being maximal 200 nm and the nanolaminated coating structure exhibiting a fine-grained structure.
    Type: Application
    Filed: June 25, 2012
    Publication date: May 29, 2014
    Applicant: OERLIKON TRADING AG, TRUBBACH
    Inventor: Mirjam Arndt
  • Patent number: 8673404
    Abstract: An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:160 to 190:30 to 50, a peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1030 to 1060 cm?1, a film density in a range of 2.5 to 2.7 g/cm3, and a distance between grains of 30 nm or shorter.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: March 18, 2014
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventor: Minoru Komada
  • Patent number: 8673406
    Abstract: The invention relates to a method for the plasma treatment of glass surfaces, the metal component, in particular the alkali and/or alkaline-earth metal component in the superficial region of the substrate being reduced by a plasma treatment of a substrate.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: March 18, 2014
    Assignee: Schott AG
    Inventors: Matthias Bicker, Uwe Rothhaar, Robert Hormes, Bernd Hanser, Manfred Lohmeyer, Stefan Bauer
  • Publication number: 20140072798
    Abstract: Provided is a gas barrier laminate that can be produced inexpensively as compared with the case of using an inorganic film without requiring a complex production process, and exhibits an excellent gas barrier capability and excellent flexibility, and also provided are a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member. A gas barrier laminate including a base and a gas barrier layer, the gas barrier layer being provided on the base, the gas barrier layer being obtained by implanting ions into an organosilicon compound thin film formed by a CVD method that utilizes an organosilicon compound as a deposition raw material, a method for producing the gas barrier laminate, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member are provided.
    Type: Application
    Filed: February 27, 2012
    Publication date: March 13, 2014
    Applicant: LINTEC CORPORATION
    Inventor: Satoshi Naganawa
  • Publication number: 20140065318
    Abstract: A method for forming an electret containing positive ions, includes: a first step of contacting water vapor including positive ions to a Si substrate to which heat is being applied, and forming an oxide layer including those ions; a second step of, along with applying an electric field that makes the side of the oxide layer that does not contact the Si substrate be the negative side, and that makes its other side be a positive side, applying heat to the Si substrate in a hydrogen atmosphere, and causing the ions in the oxide layer to shift; and a third step of contacting water vapor including a chemical substance, in an atmosphere of an inactive gas, for forming a hydrophobic chemically adsorbed monomolecular layer, and thus forming a hydrophobic membrane upon the oxide layer; wherein the second step and the third step are performed continuously within one common vessel.
    Type: Application
    Filed: August 29, 2013
    Publication date: March 6, 2014
    Applicant: AOI Electronics Co., Ltd.
    Inventors: Masato SUZUKI, Hiroki HAYASHI
  • Publication number: 20140050930
    Abstract: An environmental barrier coating system, a method of application and an article formed thereby suitable for reducing creep by incorporation of doping materials in grain boundaries of a bond coat layer to inhibit creep displacement of the EBC system when subjected to shear loading at elevated temperatures. The EBC system includes the bond coat layer on a silicon-containing substrate and at least one ceramic layer on the bond coat layer. The bond coat layer includes silicon and at least one doping material that includes a creep-resistant element. The doping material is located at grain boundaries within the bond coat layer in sufficient size and quantity to improve the creep resistance of the bond coat layer.
    Type: Application
    Filed: August 16, 2012
    Publication date: February 20, 2014
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Rupak Das, Robert Alan Brittingham
  • Publication number: 20140050929
    Abstract: An environmental barrier coating, a method of application thereof, and an article made thereby suitable for protecting components exposed to high-temperature environments with improved delamination resistance and cavitation resistance. The environmental barrier coating system for a silicon-containing substrate includes a bond coat layer on the silicon-containing substrate and at least one ceramic environmental barrier layer on the bond coat layer. The bond coat layer includes silicon and at least one doping material including elemental titanium. The doping material is located at grain boundaries within the bond coat layer in sufficient quantity to improve the delamination resistance and the cavitation resistance of increase the bond coat layer.
    Type: Application
    Filed: August 15, 2012
    Publication date: February 20, 2014
    Applicant: GENERAL ELECTRIC COMPANY
    Inventor: Rupak Das
  • Publication number: 20130251087
    Abstract: Provided in one embodiment is a method comprising: disposing atoms of at least one non-metal element over a surface of a cladding material of a nuclear fuel element; and forming at least one product comprising the at least one non-metal element in, over, or both, a surface layer of the cladding material; wherein the at least one non-metal element has an electronegativity that is smaller than or equal to that of oxygen. Also provided is a nuclear fuel element comprising a modified surface layer adapted to mitigate formation of Chalk River Unidentified Deposits (CRUD) on the cladding material.
    Type: Application
    Filed: February 15, 2013
    Publication date: September 26, 2013
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventor: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
  • Publication number: 20130244044
    Abstract: The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130° C., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. Also provided are a process for producing the same, an electronic device member that includes the gas barrier film, and an electronic device that includes the electronic device member.
    Type: Application
    Filed: September 16, 2011
    Publication date: September 19, 2013
    Applicant: LINTEC CORPORATION
    Inventors: Masaharu Ito, Takeshi Kondo, Yuta Suzuki
  • Publication number: 20130224503
    Abstract: The present invention is a formed article sequentially including a base layer, a primer layer, and a gas barrier layer, the primer layer being formed of a material that includes at least a carbon atom, an oxygen atom, and a silicon atom, and is characterized in that a peak position of binding energy of 2p electrons of the silicon atom as determined by X-ray photoelectron spectroscopy (XPS) is 101.
    Type: Application
    Filed: September 20, 2011
    Publication date: August 29, 2013
    Applicant: LINTEC CORPORATION
    Inventors: Yuta Suzuki, Takeshi Kondo
  • Publication number: 20130163119
    Abstract: A hard disk drive comprising a mixed layer is provided to reduce the head-media spacing in the hard disk drive by embedding a surface of a magnetic recording medium or head of the hard disk drive with energetic ions. The mixed layer provides sufficient protection against corrosion and wear of the magnetic layer of the magnetic recording medium without requiring any DLC and/or lubricant overcoat.
    Type: Application
    Filed: September 7, 2011
    Publication date: June 27, 2013
    Applicant: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Charanjit Signh Bhatia, Abdul Samad Mohammed
  • Publication number: 20130095308
    Abstract: A transparent conductive film having excellent visibility and a method of manufacturing the same are disclosed. The transparent conductive film having excellent visibility includes a transparent film; an undercoating layer formed on the transparent film; and a conductive layer formed on the undercoating layer, wherein the undercoating layer includes a first low refractive index layer formed of a material having an index of refraction of 1.4 to 1.46 at a lower side of the conductive layer, and a high refractive index layer formed of silicon oxynitride having an index of refraction of 1.7 to 2.0 between the first low refractive index layer and the transparent film.
    Type: Application
    Filed: September 16, 2011
    Publication date: April 18, 2013
    Applicant: LG Hausys, Ltd.
    Inventors: In-Sook Kim, Jung Cho
  • Publication number: 20130071736
    Abstract: A composite of silicon and tin is prepared as a negative electrode composition with increased lithium insertion capacity and durability for use with a metal current collector in cells of a lithium-ion battery. This electrode material is formed such that the silicon is present as a distinct amorphous phase in a matrix phase of crystalline tin. While the tin phase provides electron conductivity, both phases accommodate the insertion and extraction of lithium in the operation of the cell and both phases interact in minimizing mechanical damage to the material as the cell experiences repeated charge and discharge cycles. In general, roughly equal atomic proportions of the tin and silicon are used in forming the phase separated composite electrode material.
    Type: Application
    Filed: September 16, 2011
    Publication date: March 21, 2013
    Applicant: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: Xingcheng Xiao, Anil K. Sachdev, Mark W. Verbrugge, Ping Liu, John S. Wang
  • Publication number: 20130068136
    Abstract: Provided a formed article comprising a layer that includes a polysilazane compound and a clay mineral, and having a water vapor transmission rate at a temperature of 40° C. and a relative humidity of 90% of 6.0 g/m2/day or less. Also provided are a method for producing the formed article, an electronic device member including the formed article, and an electronic device including the electronic device member. The formed article exhibiting an excellent gas barrier capability, excellent transparency, and excellent bending resistance, a method for producing the formed article, and an electronic device member, or the like, comprising the formed article are provided.
    Type: Application
    Filed: March 28, 2011
    Publication date: March 21, 2013
    Applicant: LINTEC CORPORATION
    Inventors: Wataru Iwaya, Takeshi Kondo
  • Publication number: 20130064989
    Abstract: A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is deposited on the workpiece. The coating may be a polymer in one instance. This coating preferentially forms either on the implanted regions if these implanted regions are hydrophilic or on the non-implanted regions if the implanted regions are hydrophobic.
    Type: Application
    Filed: September 10, 2012
    Publication date: March 14, 2013
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Christopher R. Hatem, Ludovic Godet, Louis Steen, Deepak A. Ramappa
  • Publication number: 20130058024
    Abstract: Provided is a formed article comprising at least a gas barrier layer, the gas barrier layer being formed of a material that includes silicon atoms, oxygen atoms, and carbon atoms, a carbon atom content, a silicon atom content, and an oxygen atom content in a surface layer part of the gas barrier layer determined by XPS elemental analysis being 10.0 to 28.0%, 18.0 to 28.0%, and 48.0 to 66.0%, respectively, based on a total content (=100 atom %) of silicon atoms, oxygen atoms, and carbon atoms, and the formed article having a water vapor transmission rate at a temperature of 40° C. and a relative humidity of 90% of 5.3 g/m2/day or less, and a total light transmittance at a wavelength of 550 nm of 90% or more. Also provided are a method for producing the formed article, an electronic device member including the formed article, and an electronic device including the electronic device member.
    Type: Application
    Filed: March 28, 2011
    Publication date: March 7, 2013
    Applicant: LINTEC CORPORATION
    Inventors: Yuta Suzuki, Takeshi Kondo
  • Publication number: 20130059160
    Abstract: Certain example embodiments relate to an improved method of strengthening glass substrates (e.g., soda lime silica glass substrates). In certain examples, a glass substrate may be chemically strengthened by creating an electric field within the glass. In certain cases, the chemical tempering may be performed by surrounding the substrate by a plasma including certain ions, such as Li+, K+, Mg2+, and/or the like. In some cases, these ions may be forced into the glass substrate due to the half-cycles of the electric field generated by the electrodes that formed the plasma. This may advantageously chemically strengthen a glass substrate on a substantially reduced time scale. In other example embodiments, an electric field may be set in a float bath such that sodium ions are driven from the molten glass ribbon into the tin bath, which may advantageously result in a stronger glass substrate with reduced sodium content.
    Type: Application
    Filed: September 2, 2011
    Publication date: March 7, 2013
    Applicant: Guardian Industries Corp.
    Inventors: Vijayen S. Veerasamy, Xuequn Hu, Glenn A. Cerny
  • Patent number: 8389068
    Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: March 5, 2013
    Assignee: Advanced Technology Materials, Inc.
    Inventors: W. Karl Olander, Jose I. Arno, Robert Kaim
  • Patent number: 8388643
    Abstract: A embolic, bioabsorbable polymeric material (BPM) is incorporated into a coil to improve long-term anatomic results in the endovascular treatment of intracranial aneurysms. The material includes at least one biocompatible and bioabsorbable polymer and growth factors, is carried by hybrid bioactive coils and is used to accelerate histopathologic transformation of unorganized clot into fibrous connective tissue in aneurysms. An endovascular cellular manipulation and inflammatory response are elicited from implantation in a vascula location. Thrombogenicity of the biocompatible and bioabsorbable polymer is controlled by the composition of or proportioning the ratio of constituents making up the polymer. The biocompatible and bioabsorbable polymer is at least one polymer selected from the group consisting of polyglycolic acid, polyglycolic acid/poly-L-lactic acid copolymers, polycaprolactive, polyhydroxybutyrate/hydroxyvalerate copolymers, poly-L-lactide. Polydioxanone, polycarbonates, and polyanhydrides.
    Type: Grant
    Filed: August 5, 2005
    Date of Patent: March 5, 2013
    Assignee: The Regents of the University of California
    Inventors: Yuichi Murayama, Fernando Vinuela
  • Publication number: 20130052365
    Abstract: The present disclosure provides for methods of depositing a dielectric layer within a reaction chamber including a first electrode configured to support a substrate and a second electrode disposed above the first electrode and the substrate. A method includes flowing at least one reactant gas and at least one dilution gas into the reaction chamber, applying a first maximum low frequency radio frequency (LFRF) reflective power between the first and second electrodes to deposit a dielectric layer on the substrate, and applying a second maximum LFRF reflective power between the first and second electrodes during a termination operation, wherein the second maximum LFRF reflective power is less than the first maximum LFRF reflective power.
    Type: Application
    Filed: August 30, 2011
    Publication date: February 28, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Ji-Feng Liu
  • Patent number: 8361564
    Abstract: A method for implanting a dopant in a substrate is provided. A patterned photoresist mask is formed over the substrate, wherein the patterned photoresist mask has patterned photoresist mask features. A protective layer is deposited on the patterned photoresist mask by performing a cyclical deposition, wherein each cycle, comprises a depositing phase for depositing a deposition layer over surfaces of the patterned mask of photoresist material and a profile shaping phase for providing vertical sidewalls. A dopant is implanted into the substrate using an ion beam. The protective layer and photoresist mask are removed.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: January 29, 2013
    Assignee: Lam Research Corporation
    Inventors: Andrew R. Romano, S. M. Reza Sadjadi
  • Publication number: 20120321867
    Abstract: A low-emissivity multilayer coating includes, in order outward from the substrate, a first layer including a layer containing titanium oxide, a layer containing silicon nitride, or a sublayer layer containing titanium oxide in combination with a sublayer containing silicon 5 nitride, a second layer including Ag, a third layer including at least one layer selected from titanium oxide layers and silicon nitride layers, a fourth layer including Ag, and a fifth layer including silicon nitride, where the color of the coatings can be varied over a wide range by controlling the thicknesses of the layers of titanium oxide, silicon nitride and Ag.
    Type: Application
    Filed: January 13, 2012
    Publication date: December 20, 2012
    Applicant: AGC Flat Glass North America, Inc.
    Inventors: Darin GLENN, Herb JOHNSON, Rand DANNENBERG, Peter A. SIECK, Joe COUNTRYWOOD
  • Patent number: 8329260
    Abstract: A substrate is implanted with a species to form a layer of microbubbles in the substrate. The species may be hydrogen or helium in some embodiments. The size at which the microbubbles are stable within the substrate is controlled. In one example, this is by cooling the substrate. In one embodiment, the substrate is cooled to approximately between ?150° C. and 30° C. This cooling also may reduce diffusion of the species in the substrate and will reduce surface roughness when the substrate is cleaved along the layer of microbubbles.
    Type: Grant
    Filed: July 29, 2008
    Date of Patent: December 11, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Julian G. Blake, Paul J. Murphy
  • Patent number: 8304033
    Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: November 6, 2012
    Assignee: TEL Epion Inc.
    Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
  • Publication number: 20120231177
    Abstract: A method and system for plasma immersion ion processing including providing a hollow substrate having an interior surface defining an interior and a gas feed tube extending through the interior, wherein the gas feed tube is hollow and includes a wall having a plurality of holes defined therein. The method and system may also include heating the gas feed tube to a temperature in the range of 50° C. to 650° C.; supplying a precursor gas to the interior of the hollow substrate through the plurality of holes in the gas feed tube and generating a plasma; and applying a negative bias to the hollow substrate relative to the gas feed tube to draw ions from the plasma to the interior surface to form a coating on the interior surface.
    Type: Application
    Filed: March 11, 2011
    Publication date: September 13, 2012
    Applicant: SOUTHWEST RESEARCH INSTITUTE
    Inventors: Ronghua WEI, Richard L. JOHNSON, Christopher RINCON, Michael A. MILLER
  • Publication number: 20120225224
    Abstract: Certain example embodiments relate to a coated article including at least one infrared (IR) reflecting layer of a material such as silver or the like in a low-E coating, and methods of making the same. In certain cases, at least one layer of the coating is of or includes nickel and/or titanium (e.g., NixTiyOz). The provision of a layer including nickel titanium and/or an oxide thereof may permit a layer to be used that has good adhesion to the IR reflecting layer, and reduced absorption of visible light (resulting in a coated article with a higher visible transmission). When a layer including nickel titanium oxide is provided directly over and/or under the IR reflecting layer (e.g., as a barrier layer), this may result in improved chemical and mechanical durability. Thus, visible transmission may be improved if desired, without compromising durability; or, durability may simply be increased.
    Type: Application
    Filed: March 3, 2011
    Publication date: September 6, 2012
    Applicant: Guardian Industries Corp.
    Inventors: Richard Blacker, Marcus Frank, Muhammad Imran
  • Publication number: 20120190114
    Abstract: A silicon-incorporated diamond-like carbon thin film, a fabrication method thereof, and its use are disclosed. The silicon-incorporated diamond-like carbon thin film comprises a chemical bond between carbon and silicon atoms present on a surface of the silicon-incorporated diamond-like carbon thin film comprising silicon incorporated within and on the surface thereof with an atom providing hydrophilicity to the surface of the thin film on the surface of the thin film.
    Type: Application
    Filed: October 8, 2009
    Publication date: July 26, 2012
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Myoung-Woon Moon, Kwang Ryeol Lee, Jin Woo Yin, Hae-Ri Kim
  • Patent number: 8226835
    Abstract: A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired.
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: July 24, 2012
    Assignee: TEL Epion Inc.
    Inventors: John J. Hautala, Edmund Burke, Noel Russell, Gregory Herdt
  • Patent number: 8216671
    Abstract: The present invention relates to a luminescent glass element comprising a luminescent glass substrate, which a metal layer is positioned on a surface thereof. The metal layer is provided with a metal microstructure. The luminescent glass substrate has composite oxides represented as the following formula: aM2O.bY2O3.cSiO2.dCe2O3, wherein M represents alkali metal element, a, b, c and d are, by mol part, 25-60, 1-30, 20-70 and 0.001-10 respectively. The present invention also provides a producing method of the luminescent glass element and a luminescing method thereof. The metal layer is positioned on the luminescent glass substrate, thereby improving luminescence efficiency of the luminescent glass substrate. The luminescent glass element can be used in luminescent devices with ultrahigh brightness or high-speed operation.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: July 10, 2012
    Assignee: Ocean's King Lighting Science & Technology Co., Ltd.
    Inventors: Mingjie Zhou, Wenbo Ma, Yugang Liu
  • Patent number: 8192805
    Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: June 5, 2012
    Assignee: TEL Epion Inc.
    Inventors: Noel Russell, Steven Sherman, John J. Hautala
  • Publication number: 20120135157
    Abstract: The present invention relates to a ceramic coating and ion beam mixing apparatus for improving corrosion resistance, and a method of reforming an interface between a coating material and a base material. In samples fabricated using the coating and ion beam mixing apparatus, adhesiveness is improved, and the base material is reinforced, thereby improving resistance to thermal stress at high temperatures and high-temperature corrosion resistance of a material to be used in a sulfuric acid decomposition apparatus for producing hydrogen.
    Type: Application
    Filed: February 3, 2012
    Publication date: May 31, 2012
    Applicants: KOREA HYDRO AND NUCLEAR POWER CO., LTD., KOREA ATOMIC ENERGY RESEARCH INSTITUTE
    Inventors: Jaewon Park, Chang-Kue Park, Jonghwa Chang, Byungho Choi, Yongwan Kim
  • Patent number: 8153207
    Abstract: A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.
    Type: Grant
    Filed: June 19, 2009
    Date of Patent: April 10, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Nobutoshi Arai, Hiroshi Iwata