Abstract: A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.

Abstract: Polymer based lens including a hardening layer, an interferential multi-layer and an absorbent layer therebetween. The absorbent layer is made from a metal, metal oxide or metal nitride, suitable for producing a transparent layer via deposition by sputtering, and includes cations of a coloring metal from the group made up of transition elements which, in oxided form, have a cation that absorbs electromagnetic radiation in the visible spectrum. The cations of the coloring metal are in a proportion between 10% and 70% atomic percentage of the cations with respect to the cation of the predominant metal in said absorbent layer.

Abstract: A superconducting metallic glass transition-edge sensor (MGTES) and a method for fabricating the MGTES are provided. A single-layer superconducting amorphous metal alloy is deposited on a substrate. The single-layer superconducting amorphous metal alloy is an absorber for the MGTES and is electrically connected to a circuit configured for readout and biasing to sense electromagnetic radiation.

Abstract: There is disclosed an apparatus and method for focused electric field enhanced plasma-based ion implantation. The apparatus includes an implantation chamber, a vacuum pump for maintaining the pressure in the implantation chamber at a desired level, a sample holder, means for applying a negative potential to the sample holder, and means for supplying a gaseous or vaporized implantation material. The supplying means takes the form of a feed conduit having an exit opening located in the implantation chamber above the sample holder, and when a negative potential is applied to the sample holder the exit opening of the feed conduit is maintained at a potential that is positive relative to the sample holder.

Abstract: The present invention to provide a conductive polarized film that has excellent see-through visibility and heat resistance, and low resistivity. The conductive polarized film of the present invention has a support film, an organic dye film, a silicon nitride layer and a transparent conductive film, in that order.

Abstract: In order to enhance charge and discharge efficiency and to improve cycle characteristics by increasing a facing area between a positive electrode active material and a negative electrode active material, in a negative electrode for lithium secondary battery having a current collector and an active material layer carried on the current collector, the active material layer includes a plurality of columnar particles. The columnar particles include an element of silicon, and are tilted toward the normal direction of the current collector. Angle ? formed between the columnar particles and the normal direction of the current collector is preferably 10°??<90°.

Abstract: Provided are a magnetic disk comprising a granular magnetic recording layer which causes less noise even with a recording capacity thereof of 250 G or more bits per square inch; and a method for manufacturing the same. The magnetic disk according to the present invention comprises: a granular magnetic recording layer (20) which is formed on a disk substrate 10 directly or via an intermediate layer and which has non-magnetic regions between granular columnar particles; and an auxiliary recording layer (22) which is formed on the granular magnetic recording layer 20 and which causes exchange interaction among the granular columnar particles, wherein the auxiliary recording layer (22) contains 0.1 to 3 moles of oxygen.

Abstract: Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a method comprising introducing a feed gas proximate to a plasma source, where the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during a first pulse duration and a second power level during a second pulse duration, where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing a bias to the substrate during the first pulse duration.

Abstract: A system or method of charge particle beam induced materials processing is disclosed. A charged particle beam (electron or ion) is focused at the interface of a substrate and a bulk liquid. The beam induces a localized chemical reaction that results in deposition or etching of deterministic micro- or nano-scale structures. The bulk liquid reactants permit the deposition and etching of metals, semiconductors, and insulators. A charged particle transparent membrane separates the liquid reactant from the vacuum chamber in which the beam is transmitted. In many cases, bulk liquid reactants permit processing of materials with much higher purity that of the prior art and permit processing of materials previously unavailable in charged particle beam processes.

Abstract: The disclosure is directed to multilayer Mo/Si coatings for reflective mirrors used in extreme ultraviolet lithographic systems and to a method of making such mirrors using plasma ion assisted deposition (PIAD) techniques. The coating are deposited on a substrate suitable for EUV lithography, and are Mo/Si coating consisting of 40-100 Mo/Si periods, each period consisting on a Mo layer followed by a Si layer. Each of the individual Mo and Si layers is deposited to a specified or target thickness in the range of 2 nm to 5 nm, and the thicknesses are controlled to ±0.1 nm. A plasma from a plasma source is used to densify and smooth the substrate prior to deposition of the coating, and each layer of the coating is plasma densified and smoothed.

Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.

Abstract: The invention is directed to elements having fluoride coated surfaces having multiple layers of fluoride material coatings for use in laser systems, and in particular in laser systems operating at wavelength <200 nm. In a particular embodiment the invention is directed to highly reflective mirrors for use in wavelengths <200 nm laser systems. The invention describes the mirrors and a method of making them that utilizes a plurality of periods of fluoride coatings, each period comprising one layer a high refractive index fluoride material and one layer low refractive index fluoride material, and additionally at least one layer of an amorphous silica material. The silica material can be inserted between each period, inserted between a stack consisting of a plurality of periods, and, optionally, can also be applied as the final layer of the finished element to protect the element.

Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.

Abstract: The invention provides methods for the application of active materials onto active surfaces useful in organic electronic devices. The methods of the invention include selecting a liquid composition including an active material and a suitable liquid medium whereby when the liquid composition is deposited on the desired active surface it has no greater than about a 40° contact angle; treating the active surface to raise its surface tension before the deposition of a liquid composition containing the desired active material is deposited thereon; and combination thereof. The invention also provides organic electronic devices having at least two active layers, wherein at least one active layer comprises an active material that was deposited using at least one practice of the method of the invention.

Abstract: Methods for processing a vessel, for example to provide a gas barrier or lubricity, are disclosed. First and second PECVD or other vessel processing stations or devices and a vessel holder comprising a vessel port are provided. An opening of the vessel can be seated on the vessel port. The interior surface of the seated vessel can be processed via the vessel port by the first and second processing stations or devices. Vessel barrier, lubricity and hydrophobic coatings and coated vessels, for example syringes and medical sample collection tubes are disclosed. A vessel processing system and vessel inspection apparatus and methods are also disclosed.

Abstract: A cured organopolysiloxane resin film having gas barrier properties in which a layer of cured organopolysiloxane that contains an organic functional group, an organic group produced by the polymerization of polymerizable organic functional groups, or the hydrosilyl group or silanol group, is formed on a visible region-transparent film comprising cured organopolysiloxane resin yielded by hydrosilylation reaction-mediated crosslinking, and in which a silicon oxynitride layer, silicon nitride layer, or silicon oxide layer is formed on the aforementioned layer of cured organopolysiloxane. Also, a method of producing this cured organopolysiloxane resin film having gas barrier properties.

Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.

Abstract: A method of modifying a substrate for deposition of charged particles thereon, the method comprising the steps of: providing a substrate that is incapable of bonding to a polyelectrolyte coating that has a charge that is opposite to the charge of the particles that are to be deposited thereon; modifying the surface of the substrate to provide a layer of silicon thereon or therein; and coating the silicon layered surface of the substrate with the polyelectrolyte coating, the polyelectrolyte coating containing functional groups that are capable of forming bonds with said silicon layer and wherein said polyelectrolyte coating enables a substantially even distribution of said charged particles to be deposited thereon.

Abstract: A powder mixture to be made into an evaporation source material for use in ion plating, and an evaporation source material useful for ion plating and a method of producing it, and a gas barrier sheet and a method of producing it. The powder mixture comprises 100 parts by weight of silicon oxide powder and 5 to 100 parts by weight of a conductive material powder. Preferably, both the silicon oxide powder and the conductive material powder have a mean particle diameter of 5 ?m or less. The conductive material powder is preferably a powder of at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. The evaporation source material for use in ion plating is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding the powder mixture.

Abstract: A method of fabricating the semiconductor wafer processing fixtures for having longer longevity on high stressed film applications such as LPCVD-SiN, silicon carbide and other ceramics than that of non-processed parts. One aspect of the invention includes nitriding, oxidizing, or carbiding a surface layer of a polysilicon part, such as furnaceware, for converting silicon to a silicon compound and its converted surface covers and masks the underlying polycrystalline structure. A plasma immersion ion implantation of a heavy noble gas or carbon, silicon or nitrogen is followed by to form high-energy states creating gettering states adjacent the surface and the ion implanted region serves to anchor production layers such as LPCVD-SiN forming on the polysilicon part. As a result of gettering effect, tightly bonded high stressed film onto a polysilicon part allows the CVD deposition of much thicker films without peeling or cracking as long as the gettering effect remains.

Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Abstract: A method for manufacturing an optical waveguide, in which a waveguide structure including a waveguide layer of ZnS—SiO2 is deposited on a first layer, wherein a first refractive index of the first layer is lower than the refractive index of the waveguide layer. A sensor arrangement includes a planar optical waveguide, a light source, a sensor, an application unit for applying an analyte on top of the planar waveguide and a processor connected to the sensor.

Abstract: Diamond-like carbon (DLC) coated nanoprobes and methods for fabricating such nanoprobes are provided. The nanoprobes provide hard, wear-resistant, low friction probes for use in such applications as atomic force microscopy, nanomachining, nanotribology, metrology and nanolithography. The diamond-like carbon coatings include a carbon implantation layer which increases adhesion of a deposited DLC layer to an underlying nanoprobe tip.

Abstract: An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Er+ ions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.

Abstract: A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may include creating a plasma having deposition-related species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second time period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved. In another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers.

Abstract: A method of preparing a diaphragm of high purity polysilicon continuously, includes: impacting high purity silane gas molecules with a high temperature Argon ion beam source in a microwave resonator, so as to make an energy of the high purity silane gas molecules close to a particle binding energy of formation and form grains on a surface of the substrate when the high purity silane gas molecules reach a substrate of the microwave resonator, wherein the particle binding energy is more than 50 kev, the grains have diameters of about 50 nm.

Abstract: A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises providing to the reduced-pressure environment a gas cluster ion beam (GCIB) from a pressurized gas mixture, accelerating the GCIB, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film. In one embodiment, the pressurized gas mixture comprises a silicon-containing specie and at least one of a nitrogen-containing specie or a carbon-containing specie for forming a thin film containing silicon and at least one of nitrogen or carbon. In another embodiment, the gas mixture comprises a metal-containing specie for forming a thin metal-containing film.

Abstract: An optical element is used for an exposure apparatus which is configured to illuminate a mask with an exposure light beam for transferring a pattern on the mask onto a substrate through a projection optical system and to interpose a given liquid in a space between a surface of the substrate and the projection optical system. The optical element includes a first anti-dissolution member provided on a surface of a transmissive optical element on the substrate's side of the projection optical system.

Abstract: A hard coating film having wear resistance superior to conventional TiAlN coating films, oxide coating films, and the like. The hard coating film of the present invention has a component composition represented by one of the following two formulas: (TiaAlbSic)Ox, wherein 0.3?a?0.7, 0.3?b?0.7, 0?c?0.2, a+b+c=1, and 0.8?[x/(2a+1.5b+2c)]?1.2; and (TiaCrdAlbSic)Ox, wherein 0.05?a?0.4, 0.1?d?0.85, 0?b?0.7, 0?c?0.2, a+b+c+d=1, and 0.8?[x/(2a+1.5d+1.5b+2c)]?1.2; where variables a, d, b, and c denote the atomic ratios of Ti, Cr, Al, and Si respectively, and variable x indicates the atomic ratio of O.

Abstract: The present invention provides hard coating film which excels conventional surface coating layer in wear resistance, has lower frictional coefficient and better slidability, a material coated with the hard coating film, a die for cold plastic working, and a method for forming the hard coating film. The hard coating film according to the present invention is a hard coating film comprising (NbxM1-x)y(BaCbN1-a-b)1-y, where 0.2?x?1.0 ??Equation (1) 0?a?0.3 ??Equation (2) 0?1-a-b?0.5 ??Equation (3) 0.5?b?1 ??Equation (4) 0.4?1-y?0.9 ??Equation (5) [however, M denotes at least one species of elements belonging to Groups 4a, 5a, and 6a and Si and Al; x, 1-x, a, b, and 1-a-b represent respectively the atomic ratio of Nb, M, B, C and N; and y and 1-y represent respectively the ratio of (NbxM1-x) and (BaCbN1-a-b).

Abstract: Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral borane cluster molecules and its ionized lower mass byproducts. The ionized polyhedral borane cluster molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized polyhedral borane cluster molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.

Abstract: A method of fabricating silicon-on-insulators (SOIs) having a thin, but uniform buried oxide region beneath a Si-containing over-layer is provided. The SOI structures are fabricated by first modifying a surface of a Si-containing substrate to contain a large concentration of vacancies or voids. Next, a Si-containing layer is typically, but not always, formed atop the substrate and then oxygen ions are implanted into the structure utilizing a low-oxygen dose. The structure is then annealed to convert the implanted oxygen ions into a thin, but uniform thermal buried oxide region.

Abstract: A scratch resistant coated article is provided which is also resistant to attacks by at least some fluorine-inclusive etchant(s) for at least a period of time. In certain example embodiments, an anti-etch layer(s) is provided on a glass substrate in order to protect the glass substrate from attacks by fluorine-inclusive etchant(s), a scratch resistant layer of or including DLC is provided over the anti-layer(s), and a seed layer is provided between the anti-layer(s) and the scratch resistant layer so as to facilitate the adhesion of the scratch resistant layer while also helping to protect the anti-layer(s). Optionally, a base layer(s) or underlayer(s) may be under at least the anti-etch layer(s).

Abstract: A method of measuring ion dose in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece includes placing the workpiece on a pedestal in the reactor and feeding into the reactor a process gas comprising a species to be implanted into the workpiece, and then coupling RF plasma source power to a plasma in the reactor. It further includes coupling RF bias power to the workpiece by an RF bias power generator that is coupled to the workpiece through a bias feedpoint of the reactor and measuring RF current at the feedpoint to generate a current-related value, and then integrating the current-related over time to produce an ion implantation dose-related value.

Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.

Abstract: A method of forming a patterned thin film comprises the step of forming a frame having an undercut near the bottom thereof on an electrode film, and the plating step of forming the patterned thin film by plating through the use of the frame. The patterned thin film includes a plurality of linear portions disposed side by side. Each of the linear portions has a portion close to the electrode film. This portion has a width greater than the width of the remaining portion of each of the linear portions.

Abstract: A method for producing a protective coat formed on the top surface of a substrate, or on the top surface of a thin film layered body formed on the substrate is disclosed, wherein the protective coat comprises silicon oxynitride in which the atomic ratio of Si/O/N is 100/X/Y (130?X+Y?180, 10?X?135, 5?Y?150), wherein the protective coat is formed by a sputtering method in which silicon nitride is used as a target material, an inert gas is used as a sputtering gas, and N2 is used as a reactive feed gas. The oxygen component of the obtained protective coat comprising the silicon oxynitride is incorporated into the composition of the protective coat by degradation of moisture that was present in the substrate or the thin film layered body or in the reaction apparatus.

Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.

Abstract: An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:160 to 190:30 to 50, a peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1030 to 1060 cm?1, a film density in a range of 2.5 to 2.7 g/cm3, and a distance between grains of 30 nm or shorter.

Abstract: An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Er+ ions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.

Abstract: A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a compound having silicon (Si) and carbon (C), accelerating the GCIB to the reduced-pressure environment, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film containing silicon and carbon, wherein the carbon content is greater than or equal to about 10%. Further the compound may possess a Si—C bond.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: The invention is directed to a high strength, chemically toughened protective glass article, the glass article having a high damage tolerance threshold of at least 1500 g as measured by the lack of radial cracks when the load is applied to the glass using a Vickers indenter; preferably greater than 2000 g s measured by the lack of initiation of radial cracks when the load is applied to the glass using a Vickers indenter

Abstract: A method is provided for making a coated article including an anti-etch layer(s) that is resistant to attacks by at least some fluoride-based etchant(s) for at least a period of time. In certain example embodiments, an anti-etch layer(s) is provided on a glass substrate in order to protect the glass substrate from attacks by fluoride-based etchant(s). In certain example embodiments, the anti-etch layer(s) is formed using at least one ion beam (possibly in combination with at least one sputtering target). In certain embodiments, a diamond-like carbon (DLC) inclusive layer(s) may be provided over and/or under the anti-etch layer.

Abstract: A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a Si-containing substrate, activating the dopant using an activation anneal step and then anodizing the implanted and activated dopant region in a HF-containing solution. The graded porous Si has a relatively coarse top layer and a fine porous layer that is buried beneath the top layer. Upon a subsequent oxidation step, the fine buried porous layer is converted into a buried oxide, while the coarse top layer coalesces into a solid Si-containing over-layer by surface migration of Si atoms.

Abstract: Disclosed is a hard coating excellent in wear resistance, insusceptible to seizure, and excellent sliding property even after use over the long term, and a method capable of forming the hard coating excellent in sliding property in a short time. The hard coating is a hard coating expressed by chemical formula MxBaCbNc, wherein M is at least one kind of metallic element selected from the group consisting of elements in the groups 4A, 5A, and 6A of the periodic table, and Si, Al, the hard coating having chemical composition satisfying respective formulas expressed by 0?a?0.2, 0?c?0.2, 0<x?a?c, x?a?c<b?0.9, 0.05?x?0.5, and x+a+b+c=1, where x, a, b, and c denote respective atomic ratios of M, B, C, and N.

Abstract: The present application disclosed various embodiments of improved durability broad band metallic neutral density optical filters and various methods for the manufacture thereof. The devices disclosed herein include a fully densified protective thin-film layer that is essentially 100% bulk devices, free of substantially all porosity, thereby providing full environmental protection of the underlying sensitive metallic filter layer and substrate. In one embodiment, the present application is directed to a neutral density filter and includes a substrate, at least one metallic filter layer having a thickness from about 10 nm to about 100 nm applied to the substrate, and at least one protective layer having a thickness of about 10 nm to about 100 nm applied to the filter layer using an ion-plating process.

Abstract: A method for depositing material on a substrate is described. The method comprises directionally depositing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor to the thin film, wherein the deposition occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and deposition is substantially avoided on surfaces oriented substantially parallel to the direction of incidence.

Abstract: A method for the manufacture of a hard material protective coating on a substrate consisting of a metal or of a electrically conductive ceramic material, e.g. a coated tool for use in a machine tool, or components exposed to high temperature wherein, prior to the deposition of the hard protective material coating, the substrate is pretreated by bombardment with metal ions of at least one rare earth element thereby resulting in implantation of some of said ions into said substrate.

Abstract: This invention relates to a highly stable silicon hydride (SiH(1/p)) surface coating formed from high binding energy hydride ions. SiH(1/p) may be synthesized in a cell for the catalysis of atomic hydrogen to form novel hydrogen species and/or compositions of matter containing new forms of hydrogen. The reaction may be maintained by a microwave plasma of a source of atomic hydrogen, a source of catalyst, and a source of silicon.