Abstract: An inorganic antimicrobial composition has the formula AB2O4, wherein A and B are low temperature far infrared irradiating metals, A is Mg, Zn, Mn, Ni, Co, or Fe(II), B is Al, Cr(III), Mn(III) or Fe(III), and O is oxygen. An antimicrobial article is made by coating said composition on a porous honeycomb-shaped substrate. An organic antimicrobial article is made from a quarternary ammonium salt coated on a porous honeycomb-shaped substrate. Processes of making the antimicrobial articles are provided.

Abstract: An impurity solid including boron as impurity and a solid sample to which boron is introduced are held in a vacuum chamber. Ar gas is introduced into the vacuum chamber to generate plasma composed of the Ar gas. A voltage allowing the impurity solid to serve as a cathode for the plasma is applied to the impurity solid and the impurity solid is sputtered by ions in the plasma, thereby mixing boron included in the impurity solid into the plasma composed of Ar gas. A voltage allowing the solid sample to serve as a cathode for the plasma is applied to the solid sample, and boron mixed into the plasma is introduced to the surface portion of the solid sample.

Abstract: A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: To produce a desirable amount of desirable radical and/or ion in treating a substrate such as etching the substrate, depositing a thin film on the substrate and the like by using plasma and the like. As a treating gas, a gas such as CFmIn and the like containing both a strongly bonded halogen element (F etc.) and weakly bonded halogen element (I etc.) is used. A substrate is treated by active species produced by exciting the treating gas by an excitation means capable of providing an energy which cannot dissociate the strong bond but can dissociate the weak bond. Preferable excitation means is capable of emitting a monochromatic irradiation, having a single value of excitation energy, such as electron beam, light etc., or otherwise capable of providing plasma, having a peak energy value of electrons and sharp electron energy distribution, such as UHF plasma etc.

Abstract: A film is formed over a substrate using a physical vapor deposition method. When using ionized metal plasma physical vapor deposition, the deposition chamber configuration or operating parameters are adjusted to achieve the desired film characteristics. If the film is to be substantially uniform in thickness across a substrate, the deposition species density is made higher at locations away from the center of the substrate.

Abstract: A transparent conductive film of a zinc oxide type containing gallium and silicon, which contains silicon in an amount of from 0.01 to 1.5 mol % in terms of SiO.sub.2.

Abstract: The present invention relates to a method of forming an intermediate film and a hard cabon film over the inner surface of a cylindrical member having a bore, such as a bushing or a cylinder, with the hard carbon film being formed on the intermediate film with a uniform thickness, greatly enhancing of abrasion resistance of the inner surface. The cylindrical member is placed in a vacuum vessel, an auxiliary electrode of an intermediate film forming material, such as a titanium-silicon alloy or the like, is inserted in the bore of the cylindrical member, a sputtering gas is supplied into the vacuum vessel, a voltage is applied to the auxiliary electrode to produce a plasma around the auxiliary electrode in order that the intermediate film forming material is sputtered from the auxiliary electrode and an intermediate film is formed over the inner surface of the cylindrical member.

Abstract: A method of forming a layer of silicon on a surface comprises the steps of depositing silicon on the surface by a physical deposition process such as electron beam evaporation and, during said deposition process, subjecting the forming film to ionic bombardment. The resultant silicon film has stresses which are considerably reduced compared to a film produced by an ordinary physical deposition process. This method is particularly well adapted to the formation of relatively thick silicon layers (.gtoreq.1 .mu.m) on a layer (or stack of layers) of silica, to serve as an etching mask in a subsequent deep etching of the silica by reactive ion etching.

Abstract: A surface of a substrate is vacuum coated with a material by sequentially implanting and depositing ions from a single ion source. First ions of the coating material are initially implanted into the surface of the substrate to form an implanted substrate layer. Next, second ions of the material are deposited on the implanted substrate layer to form a seed layer. Third ions of the material are then implanted into the seed layer to form an intermixed layer. Fourth ions of the material are deposited over the intermixed layer to form the coating over the substrate.

Abstract: The present invention relates to a sensor for detecting hydrocarbon type gas such as methane gas and propane gas, and process for manufacturing thereof. SiO.sub.2 was deposited in 1 .mu.m by ion beam sputtering with a mixed gas (3:2) of argon and oxygen on a silicon wafer in the process. In case of a propane sensor, platinum electrode is deposited in 600 .ANG. by ion beam sputtering on a tin oxide thin film synthesized by ionized beam of which the oxygen ion energy is 0 to 500 eV by using poly alumina. In case of a methane sensor, heat treatment at 500.degree. C. was performed for 1 hour in the air in order for the thin film to be stable at high operation temperature, while heat treatment was not performed in case of propane sensor. The sensor was manufactured by adding platinum or palladium thereto by argon ion beam sputtering. The thin film type tin oxide sensor according to the present invention exhibited an excellent selectivity of 47.4% even at low temperature of 150.degree. C.

Abstract: A method of forming a region of impurity in a semiconductor substrate with minimal damage. The method includes the steps of: forming a reaction-inhibiting impurity region in the semiconductor substrate to a depth below the semiconductor substrate; and applying laser energy to the semiconductor substrate at a sufficient magnitude to liquify the semiconductor substrate in the region.

Abstract: A method of forming a film having enhanced reflow characteristics at low thermal budget is disclosed, in which a surface layer of material is formed above a base layer of material, the surface layer having a lower melting point than the base layer. In this way, a composite film having two layers is created. After reflow, the surface layer can be removed using conventional methods.

Abstract: A method for forming a metal gate (20) structure begins by providing a semiconductor substrate (12). The semiconductor substrate (12) is cleaned to reduce trap sites. A nitrided layer (14) having a thickness of less than approximately 20 Angstroms is formed over the substrate (12). This nitrided layer prevents the formation of an oxide at the substrate interface and has a dielectric constant greater than 3.9. After the formation of the nitrided layer(14), a metal oxide layer (16) having a permittivity value of greater than roughly 8.0 is formed over the nitrided layer (14). A metal gate (20) is formed over the nitrided layer whereby the remaining composite gate dielectric (14 and 16) has a larger physical thickness but a high-performance equivalent oxide thickness (EOT).

Abstract: A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.

Abstract: An improved coated orthopaedic implant component is disclosed. The implant may be coated with platinum, iridium or other metals for improved characteristics. Ion beam coating orthopaedic parts by ion implanting the parts with zirconium ions while the parts are immersed in an oxygen-containing background gas is also disclosed. The adhesion of the graded interface zirconium oxide surface layer so formed is further improved by the initial removal of surface contamination using an ion bombardment and the deposition of an intermediate layer of platinum or similar metal or silicon between the orthopaedic metal component and the zirconium oxide. Furnace heating results in atomic interdiffusion to enhance adhesion between the surfaces. The zirconium oxide provides a low friction, low wear articulating surface. The graded interface may be characterized by a blackish color and a transition between pure zirconium oxide and pure intermediate layer that extends over a thickness of hundreds of Angstroms.

Abstract: A method of forming a contact via includes forming a wiring, a first insulator layer, and a spin-on glass layer, respectively, over a semiconductor substrate. Fluorine ions are implanted into the spin-on glass layer. A second insulator layer is formed over the spin-on glass layer. The wiring is exposed by patterning the second insulator layer, the spin-on glass layer, and the first insulator layer, respectively.

Abstract: The present invention provides a process of forming an antimicrobial coating on a surface of a medical implant, the coating comprising an antimicrobially effective amount of antimicrobial metal atoms incorporated into a coating of amorphous carbonaceous material.

Abstract: An improved magnetic-recording disk and a process for manufacturing magnetic-recording disks are disclosed. A precision cold-rolled authentic stainless steel is the substrate for a magnetic-recording disk. The surface of the substrate may be hardened by plasma nitriding, plasma carburizing, or plasma carbonitriding. A hard coating may be applied to the substrate by evaporative reactive ion plating or reactive sputtering of aluminum nitride, silicon nitride, silicon carbide, or nitrides, carbides, or borides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, or tungsten.

Abstract: This invention includes the discovery that poorly crystallized hexagonal-like films of boron nitride with sp.sup.2 bonding can be converted by ion implantation to amorphous, cubic-like, boron nitride with sp.sup.3 bonding. Preferably the sp.sup.2 bonded film has a considerable amount of residual stress. The discovery that sp.sup.2 bonded BN can be converted to sp.sup.3 bonded BN may prove to be a significant advancement in coating technology for the electronics, machine tool, biomedical, and automotive industries. This discovery is important in that growth processes compatible with high volume production can be used to grow sp.sup.2 bonded BN (e.g., sputtering, e-beam evaporation, and CVD), then implantation procedures can be used to subsequently change the film to sp.sup.3 bonding. The amorphous, cubic-like, BN films can be grown on silicon wafers. This technique is also well-suited for metallic and plastic substrates because both the deposition and implantation processes occur at low temperatures.

Abstract: An ion implant process is disclosed for forming an amorphous structure in a semiconductor metallization barrier layer, which barrier may be a pure metal barrier, such as titanium, tantalum, tungsten, or metal compound barrier, such as titanium nitride, or titanium-tungsten. The implant is preferably an ion of the barrier metal being used, which is implanted such that an amorphous (texture-less non-crystalline) layer is produced. Other implant species, such as nitrogen or noble gases, such as neon or argon may also be used. Subsequent deposition of the interconnect metallization (typically Al or Cu) results in an interconnect metal structure having a high degree of texture which is characterized by a very narrow distribution of crystallographic orientations in the Al or Cu film. The highly textured Al or Cu metallization results in optimizing the interconnect metal for maximum electromigration performance.

Abstract: A process suitable for forming multi-layer (up to at least several hundred layers) monotonic/linear variable/wedge filter coatings on a single substrate surface and for forming monolithic filter assemblies which incorporate such filters, is disclosed along with the designs for such filters. The monolithic process uses radially variable filter fabrication techniques in combination with ion-assisted deposition to form stress controlled, radially variable filter coatings of the desired varied optical profile, preferably using high and low index materials stich as tantala and silica. Stress is minimized by balancing the amount of ion assist and the coating rate. Slices are cut radially from the substrate to form quasi-linear variable filters. Other coatings such as, but not limited to, a wide band hot mirror can be formed on the opposite surface of the substrate from the radially variable LVF method.

Abstract: A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein,said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm.sup.2) provided that it satisfies the relation:log.sub.10 N.ltoreq.-0.02(E-350),where N is the number of shots of the pulsed laser beam.

Abstract: This invention concerns a method for protecting surfaces of diamond, diamondlike carbon and of other forms of carbon, from the effects of oxidation which can occur at high temperatures in an oxidizing environment. The method involves exposing the surface of the diamond or other carbon material to energetic ions of, or containing, an element or elements which can be caused to react with the carbon to form a thin layer containing a carbide compound that is itself more oxidation resistant than the diamond or other carbon material and which is able to serve as a barrier to prevent or delay penetration of oxygen to the thereby protected diamond or other carbon material.

Abstract: A method of making a microelectronic thermoelectric device comprises the steps of providing a substrate of a predetermined material, creating thermally isolated, alternating P-type and N-type semiconductor materials on the substrate, electrically connecting the P-type areas to adjacent N-type areas on opposite sides of each P-type area so that each side of a P-type area is connected to an adjacent different N-type area and leaving a free P-type end and a free N-type end, and providing an electrical lead on the free end of the P-type area and an electrical lead on the free end of said N-type area for connection to a source of electrical power. Further, a microelectronic thermoelectric device comprises a plurality of sections of semiconductor material of a first conductivity type and a plurality of sections of second conductivity type opposite to the first type. The sections are arranged to alternate from one type to the other and are thermally isolated from one another.

Abstract: Method for forming a polycrystalline silicon (ploy-Si) film of a semiconductor device includes forming the gate electrode on a substrate and depositing a dielectric layer on the substrate and the conductive layer. Then a first layer (microcrystalline silicon:.mu.c-Si) is formed on the dielectric layer and a second layer (hydrogenated amorphous silicon:a-Si:H) is deposited on the first layer. Noted that the polycrystalline silicon (poly-Si) can be fabricated by applying the laser annealing to the first layer and the second layer to transform them to poly-Si. Annealing the first layer and the second layer by laser, followed by fabricating the source and drain electrodes, thus the TFT with good electrical characteristics is fabricated.

Abstract: A shiny or decorative aluminum or aluminum alloy based strip coated with an mproved corrosion-resistant protective coating for preserving the surface appearance of the strip and providing port-forming protection thereof, wherein said coating consists of a layer of silicon oxide.

Abstract: In forming an insulating film upon a selected region of a sample, a gaseous vapor is directed over the selected region for depositing a compound of the gaseous vapor containing elements of the insulating film. A charged particle beam is directed toward the selected region in order to decompose the deposited compound and provide the desired insulating film.

Abstract: In order to produce lightweight mirror structures or other reflecting components, preformed silicon elements of sufficient wall thickness are applied to a CFC or CMC substrate structure with the dimensions of the component to be produced, at a temperature in the range 1300.degree. C. and 1600.degree. C. either in vacuum or in a protective atmosphere. In this way a mirror structure or reflector is formed directly. It is possible to work at temperatures in the range of 300.degree. C. to 600.degree. C. when the silicon is applied in the form of a preform such as a wafer, which is joined to the substrate by way of a zone of a melt eutectic incorporating a nonferrous metal, which is preferably gold. The surfaces are subsequently coated.

Abstract: A laminate using a polymeric molded article as a substrate and having a light transparency, gas barrier properties and an excellent alkali resistance. The laminate is obtainable by carrying out a surface treatment to deposit an oxide of at least one metal selected from the metal elements of groups 2, 8, 9, 10 and 11 of the periodic table, and then forming a gas barrier layer such as oxides of silicon, nitrides of silicon and carbides of silicon on the treated surface. The gas barrier layer is not peeled off from the polymeric molded article even after being immersed in an alkali solution of pH 12 or more. The amount of the metal on the treated surface is preferably in the range of 5.times.10.sup.14 atoms/cm.sup.2 to 3.times.10.sup.16 atoms/cm.sup.2 in terms of the metal atoms per unit area. The practical performance of the laminate is not deteriorated during the patterning, by alkali etching, of a transparent conductive layer formed on the laminate.

Abstract: There is disclosed a process for forming aluminide diffusion coatings containing reactive elements on metal substrates such as iron, nickel or cobalt based alloys for protection against high temperature oxidation or corrosive environments. The process includes depositing a mixed metal coating containing aluminum and at least one reactive element onto the metal substrate and heat treating the coated substrate to induce interdiffusion of elements between the substrate and the deposited metal coating. In one aspect of the invention, the reactive element is yttrium and the metal coating is deposited by ion plating yttrium-aluminum by thermal evaporation from a yttrium-aluminum source. The coated substrate is heat treated between 500.degree.-1200.degree. C. to form a reactive element modified-aluminide diffusion coating having a thin outer Al.sub.2 O.sub.3 coating formed thereon.

Abstract: A method of forming an oxide enhancing region, such as phosphorus, in a semiconductor substrate with minimal damage is provided. The method includes the steps of forming an oxide enhancing region in the semiconductor substrate to a depth below the semiconductor substrate. A 308 nm excimer laser is then applied to the oxide enhancing region in order to reduce the damage caused by forming the oxide enhancing region. A uniform and reliable oxide layer is then formed on the surface of the substrate over the damage reduced oxide enhancing region.

Abstract: A method of using an amorphous carbon-based coating to extend the operating life of a fuel injector having a needle operating within a valve body, the valve body, the valve and body having steel surfaces subject to repeated impact and sliding friction contact over the operating life of the injector. The method comprises (a) providing the steel surfaces of at least one of the needle and body with an ion implanted stabilized amorphous carbon-based coating in a thickness of 1-10 micrometers, the coating having low internal stresses and low coefficient of friction independent of humidity and being stabilized by the presence of up to 30% by weight of carbide forming material selected from the group of silicon, titanium and tungsten, and (b) repeatedly and rapidly actuating the fuel injector in time periods of 0.5-1.

Abstract: The present invention provides a method for strongly adhering a diamond-like carbon coating to a metal alloy substrate using ion beam assisted deposition of silicon and/or germanium followed by ion beam assisted deposition of diamond-like carbon.

Abstract: A method for manufacturing a micro-bubble textured material includes performing simultaneous implantation of inert gas atoms and plasma assisted chemical vapor deposition. Plasma that contains ions of an inert gas and neutrals necessary for PCVD is produced over a substrate. The substrate being deposited with the material to be textured is then biased with a negative voltage to accelerate the ions from the plasma. Control over the bias voltage determines the penetration depth into the materials and control over the ion current to the substrate determines the fractional atomic density of the implanted gas atoms and the penetration depth. Simultaneous deposition causes the location of the layer of the implanted atoms to move at the deposition rate, resulting in a uniform implantation of the atoms.

Abstract: The present invention provides multilayer ion plated coatings comprising a titanium oxide as well as methods for applying such coatings onto a variety of substrates. In particular, the invention provides ion plated transparent multilayer coatings comprising layers of titanium oxide (particularly TiO.sub.x, x.apprxeq.2) and materials of low refractive indices such as SiO.sub.2, Al.sub.2 O.sub.3, MgO etc. Further provided are articles of manufacture comprising such multilayer coatings and novel deposition methods.

Abstract: A composition of matter having an atomic density between that of pure diamond and at least 0.18 g-atoms per cubic centimeter and the formula:C.sub.1-z-w Si.sub.z A.sub.w ?H.sub.1-x F.sub.x !.sub.ywhere: 0.ltoreq.z+w.ltoreq.0.15, 0.ltoreq.w.ltoreq.0.05, 0.ltoreq.x.ltoreq.0.10, 0<y<1.5, and, A is boron or oxygen. Variation of the constituents and the parameters of production of the compositions in self-biasing RF cavities, or primary or secondary ion beam methods, allows formation of films of, for example, desired hardness, lubricity, density, electrical conductivity, permeability, adhesion and stress. Variation of the properties allows production of films formed by the composition as a function of depth.

Abstract: A method for enhancing hydrogenation of oxide-encapsulated materials includes forming an injection layer having a low reflectivity of monatomic hydrogen on an oxide-encapsulated material, and hydrogenating the material with an atomic hydrogen source such as a hydrogen plasma. The method results in a significant decrease in hydrogenation time required to passivate the oxide-encapsulated materials.

Abstract: A fabricating method of a Si thin film which has no grain boundaries, photo-absorption characteristics similar to those of monocrystalline Si, and a low electrical resistivity, is provided. When electron beams 14 are applied to a deposition material source 12 to deposit the Si thin film on a substrate 10, assist ions are applied from an assist ion source 18 in the direction normal to the surface of the substrate 10.

Abstract: The present invention uses ion beam assisted deposition to adhere a diamond-like carbon coating to a cobalt-cemented tungsten carbide substrate, resulting in the following gradient at the surface of the substrate: substrate/(metal-silicide or metal-germanide)/(silicon or germanium)/(silicon carbide or germanium carbide)/DLC.

Abstract: The present invention provides a method for coating a metal alloy component of a medical implant, particularly a component of a heart valve made of a titanium base alloy, with a strongly adhered coating of diamond-like carbon. The method uses ion beam assisted deposition to form a gradient at the surface of the titanium alloy comprising metal alloy/metal-silicide/(silicon or germanium)/silicon- or germanium-carbide/DLC.

Abstract: A method of hydrogenating poly-Si in an electrical device including the step of placing a substrate having a poly-Si component in a radio frequency induced low pressure, high density plasma reactor. The method further includes the step of introducing into the radio frequency induced low pressure, high density plasma reactor a gas including at least hydrogen or deuterium. The hydrogenation of the poly-Si component is accomplished by striking a plasma in the radio frequency induced low pressure, high density plasma reactor under conditions that promote hydrogenation of the poly-Si component.

Abstract: Methods are provided for depositing insulator material at a pre-defined area of an integrated circuit (IC) by: placing an IC in a vacuum chamber; applying to a localized surface region of the integrated circuit at which insulator material is to be deposited a first gas containing molecules of a dissociable compound comprising atoms of silicon and oxygen and a second gas containing molecules of a compound which reacts with metal ions; generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. The dissociable compound comprises atoms of carbon and hydrogen, such as di-t-butoxydiacetoxy-silane. The compound which reacts with metal ions may be carbon tetrabromide or ammonium carbonate.

Abstract: This invention provides an improved process for surface modification of polymers, graphites and carbon-based composite materials, and improved surface-modified materials produced by the process. The preferred surface modification process of the present invention comprises the steps of: high dose single or multiple implantation of the substrate with energetic ions, including ions of at least one metal or semi-metal element able to form a stable, non-volatile oxide; and oxidative full or partial conversion of an upper portion of the implanted layer to a continuous, resistant oxide-enriched surface layer. The process may also comprise the additional implantation of a hardening non-metal element to participate in the formation of a glass-like surface layer or to form a carbonized, hardened sub-layer.

Abstract: An abrasion wear resistant coated substrate product is described comprising a substrate and an abrasion wear resistant coating material comprising carbon, hydrogen, silicon, and oxygen. The abrasion wear resistant coating material has the properties of Nanoindentation hardness in the range of about 2 to about 5 GPa and a strain to microcracking greater than about 1% and a transparency greater than 85% in the visible spectrum. The coated products of the present invention are suitable for use in optical applications such as ophthalmic lenses or laser bar code scanner windows. In the method for making the products, the substrate is first chemically cleaned to remove contaminants. In the second step, the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated. In the third step, the substrate surface is bombarded with energetic ions and/or reactive species to assist in the removal of residual hydrocarbons and surface oxides, and to activate the surface.

Abstract: The method for producing a metallic wiring board of this invention comprises the steps of: implanting nitrogen on a surface of a substrate; forming a metallic film including, as a main component, one of Ta and Nb on the surface of the substrate where nitrogen is implanted by a sputtering method to form a metallic wiring by patterning the metallic film; and forming an insulating film by anodic oxidation of a surface of the metallic wiring. In the step of forming a metallic wiring form Ta or Nb on a substrate or a protective layer including nitrogen to anodic-oxidize the surface of the metallic wiring, Ta ions or Nb ions do not enter the substrate. Further, the substrate or a protective layer is doped with nitrogen, and a Ta layer is formed by the sputtering method thereon. The sputtering method has a characteristic that a material contained in the substrate is mixed into a film formed in the initial stage of the coating. Therefore, the doped nitrogen enters the Ta film, and a thin .alpha.

Abstract: An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence is described. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction. The so obtained structure is then subjected to thermal treatment in the range 400.degree.-1100.degree. C.

Abstract: Method and apparatus for treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. An implantation chamber defines a chamber interior into which one or more workpieces can be inserted. A support positions one or more workpieces within an interior region of the implantation chamber so that implantation surfaces of the workpieces are facing the interior region. A dopant material in the form of a gas is injected into the implantation chamber to cause the gas to occupy a region of the implantation chamber in close proximity to the one or more workpieces. A plasma of implantation material is created within the interior region of the implantation chamber. First and second conductive electrodes positioned within the implantation chamber include conductive surfaces in proximity to the chamber interior occupied by the one or more workpieces. A voltage source outside the chamber relatively biases the first and second conductive electrodes.

Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.

Abstract: An ion beam deposition method is provided for manufacturing a coated substrate with improved abrasion resistance, and improved lifetime. According to the method, the substrate is first chemically cleaned to remove contaminants. In the second step, the substrate is inserted into a vacuum chamber, and the air in said chamber is evacuated. In the third step, the substrate surface is bombarded with energetic ions to assist in the removal of residual hydrocarbons and surface oxides, and to activate the surface. Alter After the substrate surface has been sputter-etched, a protective, abrasion-resistant coating is deposited by ion beam deposition. The ion beam-deposited coating may contain one or more layers. Once the chosen thickness of the coating has been achieved, the deposition process on the substrates is terminated, the vacuum chamber pressure is increased to atmospheric pressure, and the coated substrate products having improved abrasion-resistance are removed from the vacuum chamber.